Full-color micro light-emitting diode device and micro light-emitting diode display panel

Abstract

The invention provides a full-color miniature light-emitting diode device and a miniature light-emitting diode display panel, the full-color miniature light-emitting diode device comprises a conductive substrate, a first light-emitting structure, a second light-emitting structure, a third light-emitting structure and a red color conversion layer, the first light-emitting structure is arranged on the conductive substrate, and the second light-emitting structure is arranged on the second light-emitting structure; the second light-emitting structure is arranged on the light-emitting surface of the first light-emitting structure, the first light-emitting structure and the second light-emitting structure can emit green light and blue light respectively, and the third light-emitting structure can excite the red color conversion layer to obtain red light, so that a full-color picture display effect can be realized; the brightness of the red light obtained by exciting the red color conversion layer through the third light-emitting structure is higher than that of the red light directly emitted by a quantum well material, so that the light-emitting efficiency and the overall brightness of the full-color miniature light-emitting diode device can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a full-color micro light emitting diode device and a micro light emitting diode display panel. Background Art

[0002] Micro light emitting diode (Micro-LED) display technology can miniaturize traditional light emitting diode (LED) to form a micron-level pitch LED array to achieve ultra-high density pixel resolution. Micro-LED has the characteristics of self-luminescence. Compared with organic light emitting diode (OLED) and liquid crystal display (LCD), Micro-LED display color is easier to accurately adjust, has a longer luminous life and higher brightness, and is thinner and more energy-saving. Due to its high-density, small-size and ultra-multiple pixels, Micro-LED display will become a leader in the third-generation display technology with high realism, interactive and personalized display as its main features.

[0003] In terms of colored Micro LED technology, it can be achieved through color conversion, RGB three-color method, optical prism synthesis method, and by controlling the LED structure and size to emit light of different wavelengths. In the prior art, the RGB three-color method includes a vertical stacking method, which directly stacks the red, green and blue colors in sequence and forms an electrical connection through side electrodes or through-hole electrodes. Blue and green usually use InGaN / GaN quantum well materials, which can ensure high luminous efficiency, but red uses AlGaInP / GaInP quantum well materials, which are more affected by the size effect and result in lower luminous efficiency, thereby affecting the overall brightness of the device and restricting the application of silicon-based Micro LED in the field of augmented reality (AR).

[0004] Therefore, it is necessary to provide a full-color micro light emitting diode device and a micro light emitting diode display panel to improve this defect. Summary of the invention

[0005] The embodiments of the present application provide a full-color micro-LED device and a micro-LED display panel, which can obtain red light by exciting a red color conversion layer through other color light-emitting structures. Since the brightness of the red light obtained by exciting the red color conversion layer through other light-emitting structures is higher than the brightness of the red light directly emitted by the quantum well material, the luminous efficiency and overall brightness of the full-color micro-LED device can be improved.

[0006] The embodiment of the present application provides a full-color micro light-emitting diode device, including:

[0007] Conductive substrate;

[0008] A first light emitting structure is disposed on the conductive substrate, wherein the first light emitting structure comprises a first quantum well layer;

[0009] A second light-emitting structure is arranged on a light-emitting surface of the first light-emitting structure, the second light-emitting structure comprises a second quantum well layer, the first quantum well layer is one of a green quantum well layer and a blue quantum well layer, and the second quantum well layer is the other of the green quantum well layer and the blue quantum well layer;

[0010] a third light emitting structure, disposed on the conductive substrate, the third light emitting structure and the first light emitting structure and the second light emitting structure being spaced apart from each other on the surface of the conductive substrate, the third light emitting structure comprising a third quantum well layer; and

[0011] The red color conversion layer is arranged on the light emitting surface of the third light emitting structure. When the third light emitting structure is powered on, the red color conversion layer converts the non-red light emitted by the third quantum well layer into red light.

[0012] According to an embodiment of the present application, the third quantum well layer is a blue quantum well layer.

[0013] According to an embodiment of the present application, the first quantum well layer is a green quantum well layer, and the second quantum well layer is a blue quantum well layer.

[0014] According to an embodiment of the present application, the first light emitting structure further includes a first semiconductor layer, which is disposed between the first quantum well layer and the conductive substrate, and the second light emitting structure further includes a second semiconductor layer, which is disposed on a surface of the second quantum well layer away from the conductive substrate;

[0015] A third semiconductor layer is arranged between the first quantum well layer and the second quantum well layer, the first light-emitting structure and the second light-emitting structure share the same third semiconductor layer, the first semiconductor layer and the second semiconductor layer have the same doping type, one of the first semiconductor layer and the third semiconductor layer is N-type doped, and the other is P-type doped.

[0016] According to an embodiment of the present application, the third light-emitting structure further includes:

[0017] a fourth quantum well layer, disposed between the third quantum well layer and the conductive substrate, wherein the fourth quantum well layer is made of the same material as the first quantum well layer, and when the third light-emitting structure is powered on, the fourth quantum well layer does not emit light;

[0018] A fourth semiconductor layer, disposed between the fourth quantum well layer and the conductive substrate;

[0019] a fifth semiconductor layer, disposed between the third quantum well layer and the fourth quantum well layer; and

[0020] a sixth semiconductor layer, disposed on a surface of the third quantum well layer facing away from the fourth quantum well layer;

[0021] The fourth semiconductor layer has the same doping type as the sixth semiconductor layer and the first semiconductor layer, and the fifth semiconductor layer has the same doping type as the third semiconductor layer.

[0022] According to one embodiment of the present application, the full-color micro-light emitting diode device also includes multiple first bonding metal layers and multiple second bonding metal layers, the first bonding metal layer is arranged between the first semiconductor layer and the conductive substrate, and the second bonding metal layer is arranged between the fourth semiconductor layer and the conductive substrate.

[0023] According to one embodiment of the present application, the full-color micro-light-emitting diode device also includes a first electrode, a second electrode and a third electrode. The first electrode is electrically connected to the conductive substrate and the first bonding metal layer, respectively, the second electrode is electrically connected to the conductive substrate and the third semiconductor layer, respectively, and the third electrode is electrically connected to the conductive substrate and the second semiconductor layer, respectively.

[0024] According to an embodiment of the present application, the full-color micro-light emitting diode device also includes a fourth electrode and a fifth electrode, the fourth electrode is electrically connected to the conductive substrate and the fifth semiconductor layer respectively, and the fifth electrode is electrically connected to the conductive substrate and the sixth semiconductor layer respectively.

[0025] According to an embodiment of the present application, the orthographic projection of the red color conversion layer on the conductive substrate covers the orthographic projection of the third quantum well layer on the conductive substrate.

[0026] According to the full-color micro-light emitting diode device provided in the above embodiments of the present application, the embodiments of the present application further provide a micro-light emitting diode display panel, and the micro-light emitting diode display panel includes the full-color micro-light emitting diode device provided in any one of the above embodiments.

[0027] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a full-color micro-light emitting diode device and a micro-light emitting diode display panel. The full-color micro-light emitting diode device includes a conductive substrate, a first light-emitting structure, a second light-emitting structure, a third light-emitting structure and a red color conversion layer. The first light-emitting structure is arranged on the conductive substrate, and the second light-emitting structure is arranged on the light-emitting surface of the first light-emitting structure. The first light-emitting structure and the second light-emitting structure can emit green light and blue light respectively. The non-red light emitted by the third light-emitting structure can excite the red color conversion layer to obtain red light, thereby achieving the effect of full-color picture display. Since the brightness of the red light obtained by exciting the red color conversion layer by the third light-emitting structure is higher than the brightness of the red light directly emitted by the quantum well material, the luminous efficiency and overall brightness of the full-color micro-light emitting diode device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of the structure of a full-color micro light-emitting diode device provided in an embodiment of the present application;

[0029] Figure 2a to Figure 2f A schematic flow chart of a method for manufacturing a full-color micro-light emitting diode device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] The following descriptions of the embodiments are made with reference to the attached drawings to illustrate specific embodiments that the present application may be implemented in. The directional terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In the drawings, units with similar structures are represented by the same reference numerals.

[0031] The present application is further described below in conjunction with the accompanying drawings and specific embodiments.

[0032] An embodiment of the present application provides a full-color micro-light-emitting diode device, which can obtain red light by exciting a red color conversion layer through other color light-emitting structures. Since the brightness of the red light obtained by exciting the red color conversion layer through other light-emitting structures is higher than the brightness of the red light directly emitted by the quantum well material, the luminous efficiency and overall brightness of the full-color micro-light-emitting diode device can be improved.

[0033] Combination Figure 1 As shown, Figure 1A structural schematic diagram of a full-color micro-light emitting diode device provided in an embodiment of the present application, the full-color micro-light emitting diode device includes a conductive substrate 5, a first light-emitting structure 1 and a second light-emitting structure 2, the conductive substrate 5 is an integrated circuit wafer, the conductive substrate 5 may include a substrate and a driver circuit system arranged on the surface of the substrate, and the driver circuit system includes a pixel driver array.

[0034] The first light-emitting structure 1 is disposed on the conductive substrate 5, and the first light-emitting structure 1 includes a first quantum well layer 11. The second light-emitting structure 2 is disposed on the light-emitting surface of the first light-emitting structure 1, and the second light-emitting structure 2 includes a second quantum well layer 21, the first quantum well layer 11 is one of a green quantum well layer and a blue quantum well layer, and the second quantum well layer 21 is the other of the green quantum well layer and the blue quantum well layer.

[0035] In the embodiment of the present application, the first quantum well layer 11 is a green quantum well layer, and the second quantum well layer 21 is a blue quantum well layer. The first light-emitting structure 1 can be regarded as a green light-emitting diode. The first light-emitting structure 1 is arranged on the conductive substrate 5 and is electrically connected to the driver circuit system of the conductive substrate 5. The first light-emitting structure 1 can emit green light or not emit light under the control of the driver circuit system. The second light-emitting structure 2 can be regarded as a blue light-emitting diode. The second light-emitting structure 2 is arranged on the light-emitting surface of the first light-emitting structure 1 and is electrically connected to the driver circuit system of the conductive substrate 5. The second light-emitting structure 2 can emit blue light or not emit light under the control of the driver circuit system.

[0036] The full-color micro-LED device further includes a third light-emitting structure 3 and a red color conversion layer 4. The third light-emitting structure 3 is disposed on a conductive substrate 5, and the red color conversion layer 4 is disposed on a light-emitting surface of the third light-emitting structure 3. The third light-emitting structure 3 includes a third quantum well layer 31. When the third light-emitting structure 3 is powered on, the red color conversion layer 4 converts the non-red light emitted by the third quantum well layer 31 into red light, that is, the third light-emitting structure 3 and the red color conversion layer 4 can form a red light-emitting diode.

[0037] like Figure 1 As shown, the third light-emitting structure 3 and the first light-emitting structure 1 and the second light-emitting structure 2 are spaced apart from each other on the surface of the conductive substrate 5, and the third light-emitting structure 3 does not overlap with the first light-emitting structure 1 in the thickness direction, and the third light-emitting structure 3 does not overlap with the second light-emitting structure 2 in the thickness direction.

[0038] It should be noted that, since the third light-emitting structure 3 does not overlap with the first light-emitting structure 1 and the second light-emitting structure 2 in the thickness direction, the red light obtained by the third light-emitting structure 3 exciting the red color conversion layer 4 will not be absorbed or blocked by the first light-emitting structure 1 and the second light-emitting structure 2. Therefore, the first light-emitting structure 1 and the second light-emitting structure 2, the third light-emitting structure 3 and the red color conversion layer 4 can together constitute a full-color micro-light-emitting diode device. Since the brightness of the red light obtained by exciting the red color conversion layer 4 by the third light-emitting structure 3 is higher than the brightness of the red light directly emitted by the quantum well material, the luminous efficiency and overall brightness of the full-color micro-light-emitting diode device can be improved.

[0039] In some embodiments, the third quantum well layer 31 is a blue quantum well layer, and the red color conversion layer 4 is used to convert the blue light emitted by the third quantum well layer 31 into red light.

[0040] In one embodiment, the third light-emitting structure 3 can be regarded as a blue light-emitting diode, and the material of the third quantum well layer 31 is the same as that of the second quantum well layer 21, both of which are InGaN / GaN quantum well materials. The blue light emitted by the third quantum well layer 31 can excite the red color conversion layer 4 to obtain red light. The luminous efficiency of the InGaN / GaN quantum well material used in the third quantum well layer 31 is higher than that of the AlGaInP / GaInP quantum well material used in the traditional red LED. The brightness of the red light obtained by exciting the red color conversion layer 4 through the third light-emitting structure 3 is higher than that of the red light directly emitted by the quantum well material, thereby improving the luminous efficiency and overall brightness of the full-color micro light-emitting diode device.

[0041] In some other embodiments, the material of the third quantum well layer 31 may be different from that of the second quantum well layer 21 , as long as both are quantum well materials and both emit blue light.

[0042] In one embodiment, the material of the red color conversion layer 4 is a quantum dot material, which can be specifically cadmium selenide CdSe, perovskite or indium phosphide InP, and the half-peak width is between 30 and 50 nanometers, which can ensure color purity and achieve a larger color gamut space.

[0043] In one embodiment, the material of the red color conversion layer 4 is phosphor.

[0044] In one of the embodiments, the orthographic projection area of ​​the red color conversion layer 4 on the conductive substrate 5 is larger than the orthographic projection area of ​​the third quantum well layer on the conductive substrate 5, and the orthographic projection of the red color conversion layer 4 on the conductive substrate 5 covers the orthographic projection of the third quantum well layer 31 on the conductive substrate 5, thereby ensuring that the light emitted by the third quantum well layer 31 is absorbed by the red color conversion layer 4, thereby preventing the light emitted by the third quantum well layer 31 from being emitted through the red color conversion layer 4 and affecting the display effect of the display panel.

[0045] In one embodiment, the thickness of the red color conversion layer 4 is 2 microns. In other embodiments, the thickness of the red color conversion layer 4 is not limited to 2 microns in the above embodiment, but may also be 3 microns, 4 microns or 5 microns, etc. It only needs to be between 2 and 5 microns to avoid the red color conversion layer 4 having too large a thickness affecting the resolution, and to avoid the red color conversion layer 4 having too small a thickness affecting the conversion efficiency.

[0046] In some embodiments, the first light emitting structure 1 further includes a first semiconductor layer 12, which is disposed between the first quantum well layer 11 and the conductive substrate 5, and the second light emitting structure 2 further includes a second semiconductor layer 22, which is disposed on the surface of the second quantum well layer 21 away from the conductive substrate 5. A third semiconductor layer 13 is disposed between the first quantum well layer 11 and the second quantum well layer 21, and the first light emitting structure 1 and the second light emitting structure 2 share the same third semiconductor layer 13, and the first semiconductor layer 12 and the second semiconductor layer 22 have the same doping type, one of the first semiconductor layer 12 and the third semiconductor layer 13 is N-type doped, and the other is P-type doped.

[0047] In one embodiment, if Figure 1 As shown, the first semiconductor layer 12, the first quantum well layer 11 and the third semiconductor layer 13 constitute a first light-emitting structure 1, the first semiconductor layer 12 is N-type doped, the third semiconductor layer 13 is P-type doped, the third semiconductor layer 13, the second quantum well layer 21 and the second semiconductor layer 22 constitute a second light-emitting structure 2, the second semiconductor layer 22 is N-type doped, and the first light-emitting structure 1 and the second light-emitting structure 2 share the P-type doped third semiconductor layer 13.

[0048] Specifically, the materials of the first semiconductor layer 12 and the second semiconductor layer 22 are both selected from one or more of GaN, AlGaN, and AlInGaN, and the material of the third semiconductor layer 13 is GaN material.

[0049] In some other embodiments, the first semiconductor layer 12 and the second semiconductor layer 22 are P-type doped, the third semiconductor layer 13 is N-type doped, and the first light emitting structure 1 and the second light emitting structure 2 have a common N-type doped third semiconductor layer 13 .

[0050] The third light emitting structure 3 includes a fourth quantum well layer 32, a fourth semiconductor layer 33, a fifth semiconductor layer 34 and a sixth semiconductor layer 35. The fourth quantum well layer 32 is arranged between the third quantum well layer 31 and the conductive substrate 5, the fourth semiconductor layer 33 is arranged between the fourth quantum well layer 32 and the conductive substrate 5, the fifth semiconductor layer 34 is arranged between the third quantum well layer 31 and the fourth quantum well layer 32, and the sixth semiconductor layer 35 is arranged on the surface of the third quantum well layer 31 away from the fourth quantum well layer 32. The fourth semiconductor layer 33 and the sixth semiconductor layer 35 and the first semiconductor layer 12 have the same doping type, and the fifth semiconductor layer 34 has the same doping type as the third semiconductor layer 13, that is, the fourth semiconductor layer 33 and the sixth semiconductor layer 35 are both N-type doped, and the fifth semiconductor layer 34 is P-type doped.

[0051] In some embodiments, the first light-emitting structure 1 further includes at least one of a periodic stress adjustment layer and a current diffusion layer. Both the periodic stress adjustment layer and the current diffusion layer can be arranged between the first quantum well layer 11 and the first semiconductor layer 12. A periodic stress adjustment layer and / or a current diffusion layer can also be arranged between the first quantum well layer 11 and the third semiconductor layer 13. By setting a periodic stress adjustment layer, the stress difference between the substrate stress and the growth film can be alleviated, and the problem of stress adaptation caused by the large difference between the stress of the substrate and the stress of the growth film can be avoided. By setting a current diffusion layer, the electron distribution can be made more uniform and the conduction effect can be improved. A periodic stress adjustment layer and a current diffusion layer can also be set in the second light-emitting structure 2 and the third light-emitting structure 3. The specific structure can refer to the first light-emitting structure 1 and will not be repeated here.

[0052] In one embodiment, the first quantum well layer 11 and the fourth quantum well layer 32 are made of the same material, both of which are InGaN / GaN quantum well materials, and the second quantum well layer 21 and the third quantum well layer 31 are made of the same material, both of which are InGaN / GaN quantum well materials. The first semiconductor layer 12 and the fourth semiconductor layer 33 are made of the same material, the second semiconductor layer 22 and the sixth semiconductor layer 35 are made of the same material, and the third semiconductor layer 13 and the fifth semiconductor layer 34 are made of the same material, that is, the light-emitting structure formed by vertically stacking the first light-emitting structure 1 and the second light-emitting structure 2 is the same as the structure of the third light-emitting structure 3, except that, when the third light-emitting structure 3 is powered on, the third quantum well layer 31 emits light, and the fourth quantum well layer 32 does not emit light.

[0053] like Figure 1 As shown, the full-color micro light-emitting diode device also includes multiple first bonding metal layers 6 and multiple second bonding metal layers 7. The first bonding metal layer 6 is arranged between the first semiconductor layer 12 and the conductive substrate 5, and the second bonding metal layer 7 is arranged between the fourth semiconductor layer 33 and the conductive substrate 5.

[0054] The first light-emitting structure 1 is fixed on the conductive substrate 5 through the first bonding metal layer 6, the second light-emitting structure 2 is directly formed on the light-emitting surface of the first light-emitting structure 1 without being fixed on the light-emitting surface of the first light-emitting structure 1 through the bonding metal layer, and the third light-emitting structure 3 is fixed on the conductive substrate 5 through the second bonding metal layer 7. The light-emitting structure composed of the first light-emitting structure 1 and the second light-emitting structure 2 and the third light-emitting structure 3 only need to be bonded once to be fixed on the conductive substrate 5, thereby reducing the number of bonding times and simplifying the preparation process, thereby improving the yield.

[0055] In one embodiment, the first bonding metal layer 6 and the second bonding metal layer 7 are both Au-Au bonding structures. In some other embodiments, the first bonding metal layer 6 and the second bonding metal layer 7 can also be selected from one or more bonding structures such as Au-Au bonding, Au-Sn bonding, Au-In bonding, Ti-Ti bonding, and Cu-Cu bonding, which are not limited here.

[0056] In some embodiments, the thickness of the first bonding metal layer 6 is greater than or equal to 0.1 micrometers and less than or equal to 3 micrometers, and the thickness of the second bonding metal layer 7 is greater than or equal to 0.1 micrometers and less than or equal to 3 micrometers.

[0057] In one embodiment, the thickness of the first bonding metal layer 6 and the second bonding metal layer 7 are equal, and the thickness of the first bonding metal layer 6 is 2 microns. In some other embodiments, the thickness of the first bonding metal layer 6 and the second bonding metal layer 7 is not limited to 2 microns in the above embodiment, and can also be 0.1 microns, 0.5 microns, 1 micron, 1.5 microns, 2.5 microns or 3 microns.

[0058] In one embodiment, the reflectivity of the first bonding metal layer 6 and the second bonding metal layer 7 are both greater than 99%. Under this reflectivity, the first bonding metal layer 6 and the second bonding metal layer 7 can both be used as reflective layers, the first bonding metal layer 6 can be used to reflect the light emitted by the first light-emitting structure 1 and the second light-emitting structure 2 toward the first bonding metal layer 6, and the second bonding metal layer 7 can be used to reflect the light emitted by the third light-emitting structure 3 toward the second bonding metal layer 7, so that the luminous efficiency and overall brightness of the full-color micro light-emitting diode device can be further improved.

[0059] like Figure 1 As shown, the full-color micro-light-emitting diode device also includes a first electrode 51, a second electrode 52 and a third electrode 53. The first electrode 51 is electrically connected to the conductive substrate 5 and the first bonding metal layer 6 respectively, the second electrode 52 is electrically connected to the conductive substrate 5 and the third semiconductor layer 13 respectively, and the third electrode 53 is electrically connected to the conductive substrate 5 and the second semiconductor layer 22 respectively.

[0060] In an embodiment of the present application, the first electrode 51 and the third electrode 53 are both N electrodes, the first electrode 51 is electrically connected to the driver circuit system of the conductive substrate 5 and the first bonding metal layer 6, respectively, one end of the third electrode 53 is electrically connected to the driver circuit system of the conductive substrate 5, the other end of the third electrode 53 is continuously laid along the side walls of the first light-emitting structure 1 and the second light-emitting structure 2 to the surface of the second semiconductor layer 22 away from the conductive substrate 5, and overlaps the second semiconductor layer 22, the second electrode 52 is a P electrode, the second electrode 52 serves as a common electrode, one end of the second electrode 52 is electrically connected to the driver circuit system of the conductive substrate 5, the other end of the second electrode 52 is continuously laid along the side walls of the first light-emitting structure 1 to the surface of the third semiconductor layer 13 away from the conductive substrate 5, and overlaps the third semiconductor layer 13.

[0061] The full-color micro-LED device also includes an insulating layer 8, which is laid on the side walls of the first light-emitting structure 1 and the second light-emitting structure 2 and the light-emitting surface of the second light-emitting structure 2. The insulating layer 8 exposes part of the second semiconductor layer 22 and the third semiconductor layer 13 to facilitate overlapping of the third electrode 53 with the second semiconductor layer 22 and overlapping of the second electrode 52 with the third semiconductor layer 13.

[0062] like Figure 1 As shown, the full-color micro-LED device further includes a fourth electrode 54 and a fifth electrode 55 . The fourth electrode 54 is electrically connected to the conductive substrate 5 and the fifth semiconductor layer 34 , respectively. The fifth electrode 55 is electrically connected to the conductive substrate 5 and the sixth semiconductor layer 35 , respectively.

[0063] In one embodiment, the fourth electrode 54 is a P electrode, one end of the fourth electrode 54 is electrically connected to the driver circuit system of the conductive substrate 5, the other end of the fourth electrode 54 is continuously laid along the side wall of the third light-emitting junction 3 to the surface of the fifth semiconductor layer 34 facing away from the conductive substrate 5, and overlaps the fifth semiconductor layer 34, the fifth electrode 55 is an N electrode, one end of the fifth electrode 55 is electrically connected to the driver circuit system of the conductive substrate 5, the other end of the fifth electrode 55 is continuously laid along the side wall of the third light-emitting structure 3 to the surface of the sixth semiconductor layer 35 facing away from the conductive substrate 5, and overlaps the sixth semiconductor layer 35.

[0064] In some other embodiments, the fifth electrode 55 is electrically connected to the driver circuit system of the conductive substrate 5 and the second bonding metal layer 7, respectively. Under this structure, when the third light-emitting structure 3 is powered on, the third quantum well layer 31 does not emit light, and the fourth quantum well layer 32 emits light, that is, the green light emitted by the fourth quantum well layer 32 excites the red color conversion layer 4 to obtain red light, which can also achieve the effect of improving the luminous efficiency and overall brightness of the full-color micro light-emitting diode device.

[0065] According to the full-color micro-light emitting diode device provided in the above embodiment of the present application, the embodiment of the present application also provides a method for manufacturing a full-color micro-light emitting diode device, Figure 2a to Figure 2f As shown, Figure 2a to Figure 2f The present invention provides a schematic flow chart of a method for manufacturing a full-color micro-light-emitting diode device according to an embodiment of the present invention. The method for manufacturing a full-color micro-light-emitting diode device includes:

[0066] Step S1: forming a conductive substrate 5.

[0067] In the embodiment of the present application, the conductive substrate 5 includes a substrate and a driver circuit system disposed on a surface of the substrate, and the driver circuit system includes a pixel driver array.

[0068] Step S2: forming a blue-green light emitting diode wafer.

[0069] like Figure 2a As shown, the blue-green light emitting diode wafer includes a substrate 10 and a second semiconductor layer 22 , a second quantum well layer 21 , a third semiconductor layer 13 , a first quantum well layer 11 , and a first semiconductor layer 12 grown on the substrate 10 .

[0070] In one embodiment, the substrate 10 is a sapphire substrate. In some other embodiments, the substrate 10 may also be selected from a composite of one or more of GaN, AlN, Si, SiC, etc. The first semiconductor layer 12 and the second semiconductor layer 22 are both N-type doped, and the materials of the first semiconductor layer 12 and the second semiconductor layer 22 are both selected from one or more of GaN, AlGaN, and AlInGaN. The third semiconductor layer 13 is P-type doped, and the material of the third semiconductor layer 13 is GaN material.

[0071] In one embodiment, a periodic stress adjustment layer and / or a current diffusion layer may be provided between the first quantum well layer 11 and the first semiconductor layer 12, between the first quantum well layer 11 and the third semiconductor layer 13, between the second quantum well layer 21 and the second semiconductor layer 22, and between the second quantum well layer 21 and the third semiconductor layer 13.

[0072] Step S3: bonding the blue-green light emitting diode wafer to the conductive substrate 5 .

[0073] like Figure 2b As shown, a bonding metal layer is formed on the conductive substrate 5, and the bonding metal layer can be selected from one or more bonding structures such as Au-Au bonding, Au-Sn bonding, Au-In bonding, Ti-Ti bonding, and Cu-Cu bonding. The bonding metal layer includes a first bonding metal layer 6 and a second bonding metal layer 7. The thickness of the bonding metal layer is greater than or equal to 0.1 micrometers and less than or equal to 3 micrometers.

[0074] Step S4: removing the substrate 10.

[0075] like Figure 2c As shown, in the embodiment of the present application, the substrate 10 may be removed by a laser lift-off process or a wet chemical etching process.

[0076] Step S5: Combination Figure 2d and Figure 2e As shown, the blue-green light emitting diode wafer is patterned to form a first light emitting structure 1 , a second light emitting structure 2 and a third light emitting structure 3 ; a first electrode 51 , a second electrode 52 , a third electrode 53 , a fourth electrode 54 and a fifth electrode 55 are formed.

[0077] Step S6: Figure 2f As shown, a red color conversion layer 4 is formed on the light emitting surface of the third light emitting structure 3 .

[0078] In one embodiment, the material of the red color conversion layer 4 is a quantum dot material, which can be specifically cadmium selenide CdSe, perovskite or indium phosphide InP, and the half-peak width is between 30 and 50 nanometers, which can ensure color purity and achieve a larger color gamut space.

[0079] In one embodiment, the material of the red color conversion layer 4 is phosphor.

[0080] According to the full-color micro-light emitting diode device provided in the above embodiments of the present application, the embodiments of the present application further provide a micro-light emitting diode display panel, and the micro-light emitting diode display panel includes the full-color micro-light emitting diode device provided in any one of the above embodiments.

[0081] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a full-color micro-light emitting diode device and a micro-light emitting diode display panel. The full-color micro-light emitting diode device includes a conductive substrate, a first light-emitting structure, a second light-emitting structure, a third light-emitting structure and a red color conversion layer. The first light-emitting structure is arranged on the conductive substrate, and the second light-emitting structure is arranged on the light-emitting surface of the first light-emitting structure. The first light-emitting structure and the second light-emitting structure can emit green light and blue light respectively. The non-red light emitted by the third light-emitting structure can excite the red color conversion layer to obtain red light, thereby achieving the effect of full-color picture display. Since the brightness of the red light obtained by exciting the red color conversion layer by the third light-emitting structure is higher than the brightness of the red light directly emitted by the quantum well material, the luminous efficiency and overall brightness of the full-color micro-light emitting diode device can be improved.

[0082] In summary, although the present application is disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application is based on the scope defined by the claims.

Claims

1. A full-color micro light-emitting diode device, characterized in that: include: Conductive substrate; A first light emitting structure is disposed on the conductive substrate, wherein the first light emitting structure comprises a first quantum well layer; A second light-emitting structure is arranged on a light-emitting surface of the first light-emitting structure, the second light-emitting structure comprises a second quantum well layer, the first quantum well layer is one of a green quantum well layer and a blue quantum well layer, and the second quantum well layer is the other of the green quantum well layer and the blue quantum well layer; A third light emitting structure is disposed on the conductive substrate, the third light emitting structure and the first light emitting structure and the second light emitting structure are spaced apart from each other on the surface of the conductive substrate, and the third light emitting structure includes a third quantum well layer; as well as The red color conversion layer is arranged on the light emitting surface of the third light emitting structure. When the third light emitting structure is powered on, the red color conversion layer converts the non-red light emitted by the third quantum well layer into red light.

2. The full-color micro-light emitting diode device according to claim 1, characterized in that: The third quantum well layer is a blue quantum well layer.

3. The full-color micro-light emitting diode device according to claim 2, characterized in that: The first quantum well layer is a green quantum well layer, and the second quantum well layer is a blue quantum well layer.

4. The full-color micro-light emitting diode device according to claim 3, characterized in that: The first light emitting structure further includes a first semiconductor layer, which is disposed between the first quantum well layer and the conductive substrate; the second light emitting structure further includes a second semiconductor layer, which is disposed on a surface of the second quantum well layer away from the conductive substrate; A third semiconductor layer is arranged between the first quantum well layer and the second quantum well layer, the first light-emitting structure and the second light-emitting structure share the same third semiconductor layer, the first semiconductor layer and the second semiconductor layer have the same doping type, one of the first semiconductor layer and the third semiconductor layer is N-type doped, and the other is P-type doped.

5. The full-color micro-light emitting diode device according to claim 4, characterized in that: The third light emitting structure further includes: a fourth quantum well layer, disposed between the third quantum well layer and the conductive substrate, wherein the fourth quantum well layer is made of the same material as the first quantum well layer, and when the third light-emitting structure is powered on, the fourth quantum well layer does not emit light; A fourth semiconductor layer, disposed between the fourth quantum well layer and the conductive substrate; a fifth semiconductor layer, disposed between the third quantum well layer and the fourth quantum well layer; and a sixth semiconductor layer, disposed on a surface of the third quantum well layer facing away from the fourth quantum well layer; The fourth semiconductor layer has the same doping type as the sixth semiconductor layer and the first semiconductor layer, and the fifth semiconductor layer has the same doping type as the third semiconductor layer.

6. The full-color micro-light emitting diode device according to claim 5, characterized in that: The full-color micro-LED device also includes a plurality of first bonding metal layers and a plurality of second bonding metal layers, wherein the first bonding metal layers are arranged between the first semiconductor layer and the conductive substrate, and the second bonding metal layers are arranged between the fourth semiconductor layer and the conductive substrate.

7. The full-color micro-light emitting diode device according to claim 6, characterized in that: The full-color micro-light-emitting diode device also includes a first electrode, a second electrode and a third electrode. The first electrode is electrically connected to the conductive substrate and the first bonding metal layer respectively, the second electrode is electrically connected to the conductive substrate and the third semiconductor layer respectively, and the third electrode is electrically connected to the conductive substrate and the second semiconductor layer respectively.

8. The full-color micro-light emitting diode device according to claim 7, characterized in that: The full-color micro-light emitting diode device further includes a fourth electrode and a fifth electrode. The fourth electrode is electrically connected to the conductive substrate and the fifth semiconductor layer respectively, and the fifth electrode is electrically connected to the conductive substrate and the sixth semiconductor layer respectively.

9. The full-color micro-light emitting diode device according to claim 1, characterized in that: The orthographic projection of the red color conversion layer on the conductive substrate covers the orthographic projection of the third quantum well layer on the conductive substrate.

10. A micro light emitting diode display panel, characterized in that: It comprises a full-color micro light emitting diode device as described in any one of claims 1 to 9.

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