Semiconductor film deposition equipment

Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to semiconductor thin film deposition equipment which comprises a machine body serving as a carrier of the whole device, a material box containing a metal salt solution and an atomizing nozzle used for spraying the solution are arranged on the machine body, and a round pipe used for storing wafers is arranged on the machine body. A loading mechanism used for independently receiving a plurality of wafers is further arranged, a heat conduction mechanism used for heating the wafers is arranged on the load bearing plate, the loading mechanism comprises the load bearing plate, a transmission ring is rotationally installed on the load bearing plate, a plurality of storage boxes are fixedly connected to the transmission ring, heating plates are arranged in the storage boxes, and a transmission assembly used for lifting the wafers is further arranged on the load bearing plate. According to the wafer storage device, the feeding mechanism is arranged, the wafers are sequentially placed into the storage box, it can be ensured that the wafers accurately fall into the storage box, wafer dislocation or damage possibly caused by manual operation is avoided, and therefore the safety and stability of the wafers in the storage process are ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a semiconductor thin film deposition device. Background Art

[0002] Semiconductor thin film technology plays a vital role in the manufacture of modern electronic devices. The deposited thin film can change the conductivity, semiconductor characteristics and other electrical properties of the material to meet the needs of electronic devices. Among them, spray pyrolysis deposition technology usually uses an aqueous solution or an organic solution to be sprayed onto a heated substrate. In the process of semiconductor thin film deposition, existing deposition equipment uses a robot to achieve automated processing. Although the robot grasping the wafer improves efficiency and automation level, if the robot applies too much grasping force when grasping the wafer, it may cause the wafer to break or produce microcracks, and the uneven grasping force may cause the wafer to be subjected to unnecessary stress during the movement of the robot. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides a semiconductor thin film deposition device, which has the advantage of realizing automated processing in a pushing manner and solves the problem that grabbing the wafer may cause damage to the wafer.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions: A semiconductor thin film deposition device comprises a body serving as a carrier of the entire device, the body being provided with a material box containing a metal salt solution and an atomizing nozzle for spraying the solution, the body being provided with a round tube for storing wafers, and also being provided with a loading mechanism for individually receiving a plurality of wafers, a heat conducting mechanism for heating the wafers being provided on a load-bearing plate, the loading mechanism comprising a load-bearing plate, a transmission ring being rotatably mounted on the load-bearing plate, a plurality of storage boxes being fixedly connected to the transmission ring, a heating plate being provided in the storage boxes, and a transmission assembly for lifting the wafers being also provided on the load-bearing plate.

[0005] Preferably, a transmission bar for pushing out the wafers is fixedly connected to the material storage box, a discharge port adapted to the size of the wafers is provided below the circular tube, and a straight groove corresponding to the transmission bar is also provided.

[0006] Preferably, the transmission assembly includes an electric telescopic rod, a storage box is slidably connected to a sliding rod connected to the heating plate, a sphere is fixed to the bottom end of the sliding rod, the free end of the electric telescopic rod is fixed to a connecting frame, an arc block corresponding to the sphere is fixed to the connecting frame, and the sphere contacts the arc block to move the heating plate upward.

[0007] Preferably, the weight-bearing plate is fixedly mounted with a motor 1, the output end of the motor 1 is fixedly connected with a spur gear, and the inner wall of the transmission ring is fixedly connected with a gear ring that meshes with the spur gear for transmission.

[0008] Preferably, the heat conduction mechanism includes a cavity connected to the heating plate and the sliding rod, a flow guide pipe connected to the cavity is fixedly connected to the cavity, a hot air blower is fixedly installed at the bottom of the weight-bearing plate, and the air outlet of the hot air blower is connected to a connecting pipe corresponding to the flow guide pipe.

[0009] Preferably, the machine body is fixedly provided with a second motor, a frame is fixedly connected to the machine body, a screw is rotatably installed in the frame, the output end of the second motor is connected to the screw, a transmission block is threadedly connected to the screw, the load-bearing plate is fixedly connected to the transmission block, and the electric telescopic rod is fixedly provided on the frame.

[0010] Preferably, a pump body is installed on the material box, and the pump body is connected to the atomizing nozzle through a pipeline.

[0011] Preferably, an opening for the feeding mechanism to enter and exit is provided on the machine body, and a sealing plate corresponding to the opening is slidably connected to the machine body.

[0012] Preferably, a ferrule is fixedly connected to the machine body, a positioning sleeve is sleeved on the round tube, and a clamping block plugged with the ferrule is fixedly connected to the positioning sleeve.

[0013] By means of the above technical solution, the present invention provides a semiconductor thin film deposition device, which has at least the following beneficial effects: 1. The semiconductor thin film deposition equipment, by setting a loading mechanism, places the wafers into the storage box in sequence, which can ensure that the wafers fall into the storage box accurately, avoids wafer dislocation or damage caused by manual operation, and thus ensures the safety and stability of the wafers during storage.

[0014] 2. The semiconductor thin film deposition equipment can smoothly move the wafer upward through the contact between the sphere and the arc block, avoiding overcoming sudden changes in gravity, thereby reducing possible collision or physical damage to the wafer during the removal process.

[0015] 3. In the semiconductor thin film deposition equipment, in the material storage box, the wafer is usually more easily avoided from interference by dust and other pollutants, which helps to protect the surface quality of the wafer and reduce defects in subsequent processing.

[0016] 4. The semiconductor thin film deposition equipment uses a hot air blower to quickly transfer heat to the wafer and heating plate, making the heating process fast and efficient, which helps to shorten the production cycle and improve overall production efficiency.

[0017] 5. The semiconductor thin film deposition equipment only needs to set up a single heat source instead of multiple ones, so as to heat the wafers in sequence, thereby reducing the manufacturing cost of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application: Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention in the front view direction; Figure 2 is a cross-sectional view of the body of the present invention; Figure 3 It is a structural schematic diagram of the feeding mechanism of the present invention; Figure 4 is a cross-sectional view of a circular tube of the present invention; Figure 5 It is a schematic diagram of the external connection structure of the transmission block of the present invention; Figure 6 It is a structural schematic diagram of the heat conduction mechanism of the present invention; Figure 7 It is a schematic diagram of the installation structure of the round tube of the present invention.

[0019] Reference numerals: 100, machine body; 101, sealing plate; 102, material box; 103, atomizing nozzle; 104, motor 2; 105, frame; 106, screw; 107, round tube; 108, positioning sleeve; 109, clamping block; 110, clamping sleeve; 111, transmission block; 200, feeding mechanism; 201, load-bearing plate; 202, transmission ring; 203, storage box; 204, slide bar; 205, heating plate; 206, transmission bar; 207, motor 1; 208, spur gear; 209, gear ring; 210, ball; 211, connecting frame; 212, arc block; 213, electric telescopic rod; 214, discharge port; 300, heat transfer mechanism; 301, hot air blower; 302, connecting pipe; 303, flow guide pipe; 304, cavity. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] With the rapid development of modern electronic technology, semiconductor thin film materials are increasingly used in microelectronics, optoelectronics, solar cells and other fields. As a key link in the manufacturing process, the performance of semiconductor thin film deposition equipment directly affects the quality and function of the device. Therefore, the development of efficient and reliable thin film deposition equipment has become an important topic in the field of materials science and engineering.

[0022] Embodiment 1

[0023] Since unreasonable grasping modes (such as point grasping or edge grasping) may cause local force concentration on the wafer during movement, increasing the risk of damage, in order to solve the above problems, combined with Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 7 As shown, a semiconductor thin film deposition device provided by the present invention includes a body 100 as a carrier of the entire device, a material box 102 filled with a metal salt solution and an atomizing nozzle 103 for spraying a solution spray are provided on the body 100, a round tube 107 for storing wafers is provided on the body 100, and a loading mechanism 200 for receiving multiple wafers separately is also provided, so as to realize batch processing, reduce the processing time of each wafer, and improve the working efficiency of the equipment, and a heat conduction mechanism 300 for heating the wafer is provided on the load plate 201. Heating the wafer before deposition can remove moisture, oxides and other volatile pollutants on the surface, so as to ensure that the deposition material can be well attached to the wafer surface; There are certain errors in manual operation. When placing the wafer, the operator may not be precise enough, which may lead to incorrect placement of the wafer, affecting the accuracy of subsequent steps. In order to solve the above problems, the loading mechanism 200 includes a weight plate 201, and a transmission ring 202 is rotatably mounted on the weight plate 201. A plurality of storage boxes 203 are fixedly connected to the transmission ring 202. The arrangement of the plurality of storage boxes 203 can respectively place the wafers into the storage boxes 203, and then the wafers can be processed in turn, which is conducive to improving work efficiency. A heating plate 205 is provided in the storage box 203, and a transmission assembly for lifting the wafer is also provided on the weight plate 201. After the wafer is deposited and processed, the wafer can be lifted from the storage box 203 to facilitate the removal of the processed wafer.

[0024] Specifically, a transmission bar 206 for pushing out the wafers is fixedly connected to the material storage box 203, and an outlet 214 adapted to the size of the wafer is opened under the circular tube 107. A straight groove corresponding to the transmission bar 206 is also provided. The transmission bar 206 moves with the material storage box 203, and then the transmission bar 206 passes through the straight groove and contacts the wafer to push it out from the outlet 214. At this time, the material storage box 203 is located exactly below the wafer, so that the wafer falls into the material storage box 203. By repeating the above steps, the wafers can be placed in the material storage box 203 one by one, which can ensure that the wafers fall into the material storage box 203 accurately, avoid wafer dislocation or damage caused by manual operation, thereby ensuring the safety and stability of the wafers during storage.

[0025] Furthermore, a motor 207 is fixedly mounted on the load-bearing plate 201, a spur gear 208 is fixedly connected to the output end of the motor 207, a gear ring 209 meshing with the spur gear 208 is fixedly connected to the inner wall of the transmission ring 202, and the motor 207 is started to drive the spur gear 208 to rotate, and the rotation of the spur gear 208 drives the transmission ring 202 to rotate through the gear ring 209, thereby driving multiple storage boxes 203 to move in a circle and automatically placing the wafers into the corresponding storage boxes 203.

[0026] According to the embodiment, in the storage box 203, the wafers are usually more easily protected from interference from dust and other pollutants, which helps to protect the surface quality of the wafers and reduce defects during subsequent processing.

[0027] Embodiment 2

[0028] Since the wafer is in the material storage box 203, the size of the material storage box 203 is adapted to the wafer, and it is difficult to take the wafer out. Figure 5 As shown, on the basis of Example 1, the transmission assembly includes an electric telescopic rod 213, a slide rod 204 connected to the heating plate 205 is slidably connected to the storage box 203, a sphere 210 is fixedly connected to the bottom end of the slide rod 204, and a free end of the electric telescopic rod 213 is fixedly connected to a connecting frame 211, and an arc block 212 corresponding to the sphere 210 is fixedly connected to the connecting frame 211. The contact between the sphere 210 and the arc block 212 causes the heating plate 205 to move upward. After the wafer is processed, the free end of the electric telescopic rod 213 is extended to move the arc block 212 on the connecting frame 211 to the track on which the sphere 210 moves in a ring. Then, the transmission ring 202 rotates to drive the sphere 210 on the storage box 203 to move, and the sphere 210 contacts the arc block 212 to move it upward. The sphere 210 drives the heating plate 205 on the slide rod 204 to move upward, thereby lifting the wafer inside the storage box 203, which is convenient for subsequent removal of the wafer.

[0029] According to the embodiment, through the contact between the sphere 210 and the arc block 212, the wafer can be moved upward smoothly, avoiding overcoming the sudden change of gravity, thereby reducing the collision or physical damage that may be caused to the wafer during the removal process.

[0030] Embodiment 3

[0031] The lower surface energy of the unheated wafer may result in poor adhesion of the initial deposited layer, increasing the risk of film peeling, cracking or shedding. To solve the above problems, combined with Figure 2 and Figure 5As shown, on the basis of Example 1, the heat conduction mechanism 300 includes a cavity 304 connected to the heating plate 205 and the sliding rod 204, and a guide tube 303 connected thereto is fixedly connected to the cavity 304, and a hot air blower 301 is fixedly installed at the bottom of the weight plate 201, and the air outlet of the hot air blower 301 is connected to a connecting tube 302 corresponding to the guide tube 303. When the storage box 203 moves to the bottom of the nozzle, the guide tube 303 at the current position is also located in the same plane as the connecting tube 302. Then the hot air blower 301 is started to transport the hot air into the cavity 304 through the connecting tube 302 and the guide tube 303 in turn, and then the heat is used to heat the wafer through the heating plate 205, and then the atomizing nozzle 103 sprays the solution onto the surface of the wafer. Only a single heat source needs to be set, and there is no need to set multiple ones, so that the wafers can be heated in sequence, which can reduce the manufacturing cost of the equipment.

[0032] Specifically, a motor 2 104 is fixedly installed on the body 100, a frame 105 is fixedly connected to the body 100, an output end of the motor 2 104 is connected to a screw 106, a screw 106 is rotatably installed in the frame 105, a transmission block 111 is threadedly connected to the screw 106, a weight plate 201 is fixedly connected to the transmission block 111, an electric telescopic rod 213 is fixedly installed on the frame 105, the motor 2 104 is started to drive the screw 106 to rotate, the rotation of the screw 106 drives the transmission block 111 to move, and the transmission block 111 drives the weight plate 201 to move, thereby controlling the entry and exit of the wafer.

[0033] According to the embodiment, the use of the hot air blower 301 can quickly transfer heat to the wafer and the heating plate 205, making the heating process fast and efficient, which helps to shorten the production cycle and improve the overall production efficiency.

[0034] Embodiment 4

[0035] Combination Figure 1 and Figure 7 As shown, on the basis of Example 1, a pump body is installed on the material box 102, and the pump body is connected to the atomizing nozzle 103 through a pipeline. The pump body transports the solvent in the material box 102 to the atomizing nozzle 103 through the pipeline, and then the atomizing nozzle 103 sprays the mist solution onto the wafer, which can finely atomize the solvent into tiny particles, which makes the solution more evenly distributed on the wafer surface, and helps to form a uniform thin film coating.

[0036] Specifically, an opening for the feeding mechanism 200 to enter and exit is provided on the machine body 100, and a sealing plate 101 corresponding to the opening is slidably connected to the machine body 100.

[0037] Furthermore, a clamping sleeve 110 is fixedly connected to the machine body 100 , a positioning sleeve 108 is sleeved on the round tube 107 , and a clamping block 109 plugged into the clamping sleeve 110 is fixedly connected to the positioning sleeve 108 .

[0038] Through the above embodiment, it can be known that: first, the round tube 107 is placed on the ferrule 110 next to the body 100, the motor 1 207 is started to drive the spur gear 208 to rotate, and the spur gear 208 rotates through the gear ring 209 to drive the transmission ring 202 to rotate, thereby driving multiple storage boxes 203 to move in a circular manner, and the transmission bar 206 moves with the storage box 203, and then the transmission bar 206 passes through the straight groove and contacts the wafer to push it out from the discharge port 214. At this time, the storage box 203 is just below the wafer, so that the wafer falls into the storage box 203, and the above steps are repeated to automatically put the wafers into the storage box 203 in turn, and then the motor 2 10 The screw rod 106 is started to rotate, and the screw rod 106 rotates to drive the transmission block 111 to move, and the transmission block 111 drives the weight plate 201 to move, and the material storage box 203 on the weight plate 201 is moved to the inside of the machine body 100. When the material storage box 203 moves to the bottom of the nozzle, the guide pipe 303 at the current position is also located in the same plane as the connecting pipe 302. Then the hot air blower 301 is started to transport the hot air to the cavity 304 through the connecting pipe 302 and the guide pipe 303 in turn, and then the heat is heated by the heating plate 205 to heat the wafer, and then the atomizing nozzle 103 sprays the solution onto the surface of the wafer. After the processing is completed, the weight plate 201 can be removed.

[0039] It should be noted that the terms "comprises", "includes" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus.

[0040] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor thin film deposition device, comprising a body (100) as a carrier of the entire device, a material box (102) containing a metal salt solution and an atomizing nozzle (103) for spraying the solution provided on the body (100), characterized in that: The machine body (100) is provided with a round tube (107) for storing wafers, and is also provided with a loading mechanism (200) for individually receiving a plurality of wafers, and a heat conduction mechanism (300) for heating the wafers is provided on the load-bearing plate (201); The loading mechanism (200) comprises a load-bearing plate (201), a transmission ring (202) is rotatably mounted on the load-bearing plate (201), a plurality of material storage boxes (203) are fixedly connected to the transmission ring (202), a heating plate (205) is provided in the material storage box (203), and a transmission component for lifting wafers is also provided on the load-bearing plate (201).

2. The semiconductor thin film deposition device according to claim 1, characterized in that: A transmission bar (206) for pushing out wafers is fixedly connected to the storage box (203), and a discharge port (214) adapted to the size of the wafer is provided below the circular tube (107), as well as a straight groove corresponding to the transmission bar (206).

3. The semiconductor thin film deposition device according to claim 1, characterized in that: The transmission assembly comprises an electric telescopic rod (213), a sliding rod (204) connected to the heating plate (205) being slidably connected to the material storage box (203), a sphere (210) being fixedly connected to the bottom end of the sliding rod (204), a connecting frame (211) being fixedly connected to the free end of the electric telescopic rod (213), an arc block (212) corresponding to the sphere (210) being fixedly connected to the connecting frame (211), and the sphere (210) being in contact with the arc block (212) so that the heating plate (205) moves upward.

4. The semiconductor thin film deposition device according to claim 1, characterized in that: The load-bearing plate (201) is fixedly mounted with a motor 1 (207), the output end of the motor 1 (207) is fixedly connected with a spur gear (208), and the inner wall of the transmission ring (202) is fixedly connected with a gear ring (209) meshing with the spur gear (208).

5. The semiconductor thin film deposition device according to claim 1, characterized in that: The heat conduction mechanism (300) comprises a cavity (304) disposed in communication with the heating plate (205) and the sliding rod (204); a flow guide pipe (303) connected thereto is fixedly connected to the cavity (304); a hot air blower (301) is fixedly mounted at the bottom of the load-bearing plate (201); and a connecting pipe (302) corresponding to the flow guide pipe (303) is connected to the air outlet of the hot air blower (301).

6. The semiconductor thin film deposition device according to claim 3, characterized in that: The machine body (100) is fixedly mounted with a second motor (104), a frame (105) is fixedly connected to the machine body (100), a screw rod (106) is rotatably mounted in the frame (105), an output end of the second motor (104) is connected to the screw rod (106), a transmission block (111) is threadedly connected to the screw rod (106), a load-bearing plate (201) is fixedly connected to the transmission block (111), and an electric telescopic rod (213) is fixedly mounted on the frame (105).

7. The semiconductor thin film deposition device according to claim 1, characterized in that: A pump body is installed on the material box (102), and the pump body is connected to the atomizing nozzle (103) through a pipeline.

8. The semiconductor thin film deposition device according to claim 1, characterized in that: The machine body (100) is provided with an opening for the feeding mechanism (200) to enter and exit, and the machine body (100) is also slidably connected with a sealing plate (101) corresponding to the opening.

9. The semiconductor thin film deposition device according to claim 1, characterized in that: A clamping sleeve (110) is fixedly connected to the machine body (100), a positioning sleeve (108) is sleeved on the round tube (107), and a clamping block (109) plugged into the clamping sleeve (110) is fixedly connected to the positioning sleeve (108).

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