Substrate bonding system and substrate bonding method

Abstract

The substrate bonding apparatus includes gas discharge holes (1413c, 1423c) provided in a second region of the stage and the head, and a control unit that controls the suction holder driving unit and the gas supply unit (1492) so as to release the holding of the substrate by the electrostatic suction holders (1413, 1423) in a state in which a peripheral portion of the substrate is held by the electrostatic suction holders before the central portions of the substrate are brought into contact with each other, and to supply gas to the suction holder driving unit and the gas supply unit (1492). The gas is discharged from the gas discharge holes (1413c, 1423c). Then, the stage and the head have grooves (1413d, 1423d) provided in the second region and communicating with the gas discharge holes (1413c, 1423c).

Description

Technical Field

[0001] The present invention relates to a substrate bonding system and a substrate bonding method. Background Art

[0002] A device for joining two substrates to each other has been proposed, including a mounting device for mounting the substrates during joining (for example, refer to Patent Document 1). The mounting device described in Patent Document 1 has an annular portion that holds the outer periphery of the substrate by a vacuum suction seat, and a deformation means for deforming the substrate so that the central portion of the substrate protrudes from the mounting device. Then, after the central portions of the joining surfaces of the two substrates are brought into contact with each other, the vacuum suction seat releases the adsorption and holding of the periphery of one substrate. As a result, the contact portion expands radially outward from the center of one substrate as a starting point due to the restoring force acting on the periphery of one substrate and gravity, and reaches the peripheral surface of one substrate. Thus, the two substrates are joined to each other.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2013 / 023708 Summary of the Invention

[0006] Problems that the invention aims to solve

[0007] However, in the device described in Patent Document 1, when the suction holding the periphery of one substrate is released, even if the vacuum holder holding the periphery of the substrate is stopped, the electrostatic force generated by the periphery of the substrate may cause it to adhere to the mounting surface of the mounting device. In this case, the force acting on one substrate becomes uneven, resulting in inconsistent expansion speeds of the contact area between the substrates. This, in turn, may reduce the overall bonding position accuracy of the two substrates.

[0008] The present invention has been made in view of the above-mentioned reasons, and an object of the present invention is to provide a substrate bonding system and a substrate bonding method capable of improving the bonding position accuracy of substrates bonded to each other as a whole.

[0009] Means of solving the problem

[0010] To achieve the above-mentioned object, a substrate bonding system according to the present invention is a substrate bonding system for bonding a first substrate to a second substrate, comprising:

[0011] A first substrate holding portion, holding the first substrate;

[0012] a second substrate holding portion for holding the second substrate in a state where the bonding surface of the second substrate faces the bonding surface of the first substrate;

[0013] At least one first electrostatic suction seat is provided in a first area of ​​the periphery facing the first substrate, wherein the first substrate is arranged at a predetermined substrate holding position of the first substrate holding portion;

[0014] at least one second electrostatic suction seat disposed in a second region inside the first region of the first substrate holding portion and configured to hold a portion of the first substrate disposed at the substrate holding position that faces the second region;

[0015] A suction seat driving unit, driving the first electrostatic suction seat and the second electrostatic suction seat respectively;

[0016] a gas discharge portion disposed in the second region of the first substrate holding portion and discharging gas toward the first substrate;

[0017] a gas supply unit that supplies gas to the gas discharge unit; and

[0018] The control unit releases the holding of the first substrate by the second electrostatic suction holder while the periphery of the first substrate is held by the first electrostatic suction holder before the central portion of the bonding surface of the first substrate contacts the central portion of the bonding surface of the second substrate, and controls the suction holder driving unit and the gas supply unit to discharge gas from the gas discharge unit.

[0019] The first substrate holding portion includes a first recessed portion provided in the second region and communicating with the gas discharge portion.

[0020] From another viewpoint, the substrate bonding method according to the present invention is a substrate bonding method for bonding a first substrate and a second substrate.

[0021] a step of holding a periphery of the first substrate on a first electrostatic suction seat, wherein the first electrostatic suction seat is disposed in a first region facing the periphery of the first substrate, and the first substrate is disposed in a predetermined substrate holding position of a first substrate holding portion;

[0022] holding the second substrate on a second substrate holding portion in a state where the bonding surface of the second substrate faces the bonding surface of the first substrate;

[0023] The step of discharging gas toward a first recess of a gas discharge portion of a first substrate holding portion while the periphery of the first substrate is held by the first electrostatic suction holder, wherein the first substrate holding portion has the first recess, and the first recess is connected to a gas discharge portion of a second region provided inside the first region; and

[0024] After the gas is discharged into the first recess, a central portion of the bonding surface of the first substrate is brought into contact with a central portion of the bonding surface of the second substrate.

[0025] Effects of the Invention

[0026] According to the present invention, the first substrate holding portion includes a first recessed portion provided in the second region and communicating with the gas discharge portion. With the central portion of the first substrate's bonding surface in contact with the central portion of the second substrate's bonding surface and the first substrate's periphery held by the first electrostatic suction holder, gas is discharged from the gas discharge portion through the first recessed portion between the first substrate holding portion and the first substrate, bringing the first and second substrates into contact. Consequently, the pressure of the gas discharged from the first recessed portion effectively releases the force exerted by the gas against the first substrate holding portion, effectively releasing the force exerted against the first substrate by the residual electrostatic force of the second electrostatic suction holder after release of the second electrostatic suction holder. In this state, the first and second substrates are brought into contact by applying pressure to the central portions of the first and second substrates at a pressure exceeding a critical pressure. This allows for bonding of the first and second substrates from their central portions toward their peripheries, while the adhesion force of the first substrate holding portion against the first substrate is not affected. Consequently, the first and second substrates can be bonded with high positional accuracy over the entire surface without distortion. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 1 is a schematic diagram showing the configuration of a substrate bonding system according to a first embodiment of the present invention.

[0028] Figure 2 It is a schematic front view of the activation treatment device according to the first embodiment.

[0029] Figure 3 It is a schematic front view of the substrate bonding apparatus according to the first embodiment.

[0030] Figure 4A This is a schematic perspective view showing the stage and the vicinity of the head according to the first embodiment.

[0031] Figure 4B It is a diagram illustrating a method of fine-tuning the head according to the first embodiment.

[0032] Figure 5A It is a schematic plan view of the stage and the head according to the first embodiment.

[0033] Figure 5B This is an enlarged view of a portion of the stage and the head according to the first embodiment.

[0034] Figure 6AIt is a plan view of a portion of the first region of the stage and the head according to the first embodiment.

[0035] Figure 6B It is a plan view of a portion of the second region of the stage and the head portion according to the first embodiment.

[0036] Figure 7A The carrier and the head according to the first embodiment Figure 5A Schematic cross-sectional view of line BB.

[0037] Figure 7B The carrier and the head according to the first embodiment Figure 5A Schematic cross-sectional view of line AA.

[0038] Figure 8 It is a schematic plan view of the position measuring unit according to the first embodiment.

[0039] Figure 9A This is a diagram showing three alignment marks provided on one of two substrates to be bonded.

[0040] Figure 9B This is a diagram showing three alignment marks provided on the other side of the two bonded substrates.

[0041] Figure 10A It is a schematic diagram showing a captured image of an alignment mark.

[0042] Figure 10B It is a schematic diagram showing a state in which alignment marks are misaligned with each other.

[0043] Figure 11 This is a schematic diagram of the inspection device according to the first embodiment.

[0044] Figure 12 This is a flowchart showing the flow of a substrate bonding method performed by the substrate bonding system according to the first embodiment.

[0045] Figure 13A FIG. 1 is a schematic plan view showing the electrostatic chuck and the alignment mark according to the first embodiment, and illustrating a state in which the electrostatic chuck and the alignment mark overlap. FIG.

[0046] Figure 13B FIG. 1 is a schematic plan view showing the electrostatic chuck and the alignment mark according to the first embodiment, and illustrating a state where the electrostatic chuck and the alignment mark do not overlap. FIG.

[0047] Figure 14 This is a flowchart showing the flow of a substrate bonding step performed by the substrate bonding apparatus according to the first embodiment.

[0048] Figure 15AThis is a schematic cross-sectional view showing a state in which the center portion of the substrate held by the stage and the head is separated from the stage and the head according to the first embodiment.

[0049] Figure 15B This is a schematic cross-sectional view showing a state in which the center portions of the bonding surfaces of the substrates held by the stage and the head are brought into contact with each other according to the first embodiment.

[0050] Figure 16A This is a schematic cross-sectional view showing how substrates held by the stage and the head are brought close to each other according to the first embodiment.

[0051] Figure 16B This is a schematic cross-sectional view showing how substrates held by the stage and the head are brought close to each other according to the first embodiment.

[0052] Figure 17A This is a schematic cross-sectional view showing a state in which peripheral portions of bonding surfaces of substrates held by a stage and a head are brought into contact with each other according to an embodiment.

[0053] Figure 17B This is a schematic cross-sectional view showing how the head portion is detached from the stage according to the first embodiment.

[0054] Figure 18 Graphs showing the distribution of position deviation vectors obtained from images captured by an inspection device according to the first embodiment, illustrating a situation where correction of a horizontal offset vector and a protruding offset amount is not performed when substrates are bonded to each other, (A) is a graph showing position deviation vectors indicating the position deviation amount and position deviation direction of each alignment mark, (B) is a graph showing the XY direction components of the position deviation vectors, (C) is a graph showing the rotational direction components of the position deviation vectors, (D) is a graph showing the warping component of the position deviation vectors, and (E) is a graph showing the torsion component of the position deviation vectors.

[0055] Figure 19A A diagram for explaining the offset vector of the alignment mark.

[0056] Figure 19B A diagram for explaining the offset vector of the alignment mark.

[0057] Figure 19C A diagram for explaining the offset vector of the alignment mark.

[0058] Figure 19D A diagram for explaining the offset vector of the alignment mark.

[0059] Figure 19E A diagram for explaining the offset vector of the alignment mark.

[0060] Figure 20A1 is a schematic plan view showing a state where an electrostatic chuck and an alignment mark overlap according to a comparative example.

[0061] Figure 20B It is a schematic plan view showing an electrostatic chuck and an alignment mark according to a comparative example, and showing a state after the posture of the substrate is changed.

[0062] Figure 21A It is a schematic plan view of the stage and the head according to the second embodiment.

[0063] Figure 21B The carrier and the head according to the second embodiment Figure 21A Cross-sectional view of the CC line.

[0064] Figure 22A This is a schematic cross-sectional view showing a state in which the center portions of the bonding surfaces of the substrates held by the stage and the head are brought into contact with each other according to the second embodiment.

[0065] Figure 22B This is a schematic cross-sectional view showing how the substrates held by the stage and the head respectively abut against the pressing members according to the second embodiment.

[0066] Figure 23A This is a schematic cross-sectional view showing how substrates held by a stage and a head are brought close to each other according to the second embodiment.

[0067] Figure 23B This is a schematic cross-sectional view showing a state in which peripheral portions of bonding surfaces of substrates held by a stage and a head are brought into contact with each other according to the second embodiment.

[0068] Figure 24A It is a schematic top view of a carrier and a head according to a modified example.

[0069] Figure 24B This is an enlarged view of a portion of the stage and the head according to a modified example.

[0070] Figure 25A It is a schematic top view of a carrier and a head according to a modified example.

[0071] Figure 25B This is an enlarged view of a portion of the stage and the head according to a modified example.

[0072] Figure 26A It is a schematic top view of a carrier and a head according to a modified example.

[0073] Figure 26B The carrier and the head according to the modified example Figure 26A Schematic cross-sectional view of the DD line.

[0074] Figure 27AIt is a top view of a portion of the second region of the stage and the head according to a modified example.

[0075] Figure 27B The carrier and the head according to the modified example Figure 26A Schematic cross-sectional view of EE line.

[0076] Figure 28 It is a schematic top view of a carrier and a head according to a modified example.

[0077] Figure 29 It is a cross-sectional view of the carrier and the head according to a modified example.

[0078] Figure 30 This is a schematic plan view of an imaging unit according to a modified example.

[0079] Figure 31 It is a schematic front view of an activation treatment device according to a modified example.

[0080] Figure 32 This is a flowchart showing the flow of a substrate bonding step performed by a substrate bonding apparatus according to a modified example. DETAILED DESCRIPTION

[0081] (First embodiment)

[0082] The following describes a substrate bonding apparatus according to an embodiment of the present invention with reference to the accompanying drawings. The apparatus places two substrates in a vacuum chamber at a vacuum level exceeding a predetermined reference vacuum level, performs an activation treatment on the bonding surfaces of the two substrates, and bonds the two substrates by bringing the two substrates into contact with each other.

[0083] like Figure 1 As shown, the substrate bonding system according to this embodiment includes inlets 811, 812, a removal port 813, conveying devices 82, 84, 86, a cleaning device 3, an activation treatment device 2, a substrate bonding device 1, load locks 83, 85, an inspection device 7, and a control unit 9. The control unit 9 controls the operations of the conveying devices 82, 84, 86, the cleaning device 3, the activation treatment device 2, the substrate bonding device 1, the load locks 83, 85, and the inspection device 7. The conveying device 82 includes a conveying robot 821, and the front end of the arm of the conveying robot 821 is provided with a holding portion for holding the substrate. The conveying robot 821 can move along the arrangement direction of the inlets 811, 812 and the removal port 813, and can change the direction of the front end of the arm by rotating. The conveying device 82 is provided with a high efficiency particulate air (HEPA) filter (not shown). As a result, the inside of the conveying device 82 becomes an atmospheric pressure environment with very few particles.

[0084] The cleaning device 3 cleans while spouting water, cleaning liquid or nitrogen toward the conveyed substrate. The cleaning device 3 includes a carrier (not shown) that supports the substrate, a rotation drive unit (not shown) that rotates the carrier in a plane perpendicular to the vertical direction, and a cleaning nozzle (not shown) that spits out water, cleaning liquid or nitrogen that is given ultrasonic or megasonic vibrations. Then, the cleaning device 3 causes the cleaning nozzle to shake in the radial direction of the substrates W1 and W2, while spraying water with ultrasonic waves from the cleaning nozzle to the bonding surface of the substrates, and cleans the entire bonding surface of the substrates W1 and W2 by rotating the carrier. Then, the cleaning device 3 rotates the carrier while the spouting of water from the cleaning nozzle is stopped, thereby drying the substrates W1 and W2. Similar to the conveying device 82, the cleaning device 3 is also provided with a HEPA filter (not shown).

[0085] The load lock 83 includes a chamber 831, an exhaust pipe (not shown) communicating with the chamber 831, a vacuum pump (not shown) that exhausts gas from the chamber 831 through the exhaust pipe, and an exhaust valve (not shown) inserted into the exhaust pipe. The load lock 83 opens the exhaust valve and activates the vacuum pump, causing gas from the chamber 831 to be exhausted from the chamber 831 through the exhaust pipe, thereby reducing the pressure within the chamber 831. The load lock 83 also includes a gate 8331 positioned on the transport device 82 side of the chamber 831, a gate 8321 positioned on the transport device 84 side of the chamber 831, and gate drivers 8332 and 8322 that respectively open and close the gates 8331 and 8321. The load lock 83 also includes an alignment mechanism (not shown) that adjusts the position of the substrates W1 and W2 within the chamber 831. Gates 8331 and 8321 are provided to cover the openings (not shown) on the transfer device 82 side and the opening (not shown) on the transfer device 84 side, respectively, that extend through chamber 831. Furthermore, load lock 83 includes chamber 831, an exhaust pipe (not shown) communicating with chamber 831, a vacuum pump (not shown) that exhausts gas from chamber 831 through the exhaust pipe, and an exhaust valve (not shown) inserted into the exhaust pipe. Load lock 83 opens the exhaust valve and activates the vacuum pump, discharging gas from chamber 831 through the exhaust pipe to the outside of chamber 831, thereby reducing the pressure within chamber 831. Chamber 831 is connected to transfer device 82 via gate 8331 and to transfer device 84 via gate 8321. Similarly to load lock 83, load lock 85 includes chamber 851, an exhaust pipe (not shown), a vacuum pump (not shown), and an exhaust valve (not shown). The chamber 851 is connected to the transfer device 82 via a gate 8531 and is connected to the transfer device 86 through a gate 8521 .

[0086] The transport device 84 includes a chamber 843, an exhaust pipe (not shown) communicating with the chamber 843, a vacuum pump (not shown) that exhausts the gas in the chamber 843 through the exhaust pipe, an exhaust valve (not shown) inserted into the exhaust pipe, and a transport robot 841 that transports substrates W1 and W2. The transport device 84 opens the exhaust valve and activates the vacuum pump to exhaust the gas in the chamber 843 through the exhaust pipe to the outside of the chamber 843, thereby maintaining a reduced pressure inside the chamber 843. The chamber 843 is connected to the substrate bonding apparatus 1 via a gate 1211 and to the load lock 83 via a gate 8321. When the transport robot 841 transports substrates W1 and W2 into the substrate bonding apparatus 1, the gate 1211 is open. The front end of the arm of the transport robot 841 is provided with a holding portion for holding the substrate, and the direction of the front end of the arm can be changed by rotation. The holding portion is, for example, an electrostatic suction holder, which suction-holds the opposite side of the bonding surface of the substrates W1 and W2. The transport device 84 includes a transport device imaging portion 844, which images a plurality of positions around the substrates W1 and W2.

[0087] Similar to the transport unit 84, the transport unit 86 includes a chamber 863, an exhaust pipe (not shown), a vacuum pump (not shown), an exhaust valve (not shown), and a transport robot 861. The chamber 863 is connected to the activation unit 2 via a gate 8621 and to the load lock 85 via a gate 8521. Similar to the transport robot 841, the front end of the arm of the transport robot 861 is equipped with a holding portion for holding the substrate, and the orientation of the front end of the arm can be changed by rotation. The holding portion is, for example, an electrostatic chuck that suction-holds the substrates W1 and W2 on the side opposite the bonding surface.

[0088] The activation treatment device 2 performs activation treatment on the bonding surface of the substrate by performing at least one of reactive ion etching using nitrogen gas and nitrogen radical irradiation. The activation treatment device 2 is a device that generates inductively coupled plasma (ICP), such as Figure 2As shown, the activation treatment apparatus 2 includes a stage 210, a processing chamber 212, a plasma chamber 213, an induction coil 215 wound around the outside of the plasma chamber 213, and a high-frequency power supply 216 for supplying a high-frequency current to the induction coil 215. The plasma chamber 213 is formed, for example, of quartz glass. Furthermore, the activation treatment apparatus 2 includes a nitrogen supply unit 220A and an oxygen supply unit 220B. The nitrogen supply unit 220A includes a nitrogen reservoir 221A, a supply valve 222A, and a supply pipe 223A. The oxygen supply unit 220B includes an oxygen reservoir 221B, a supply valve 222B, and a supply pipe 223B. Substrates W1 and W2 are placed on the stage 210. The processing chamber 212 is connected to the interior of the plasma chamber 213. The processing chamber 212 is connected to a vacuum pump 201a via an exhaust pipe 201b and an exhaust valve 201c. The activation processing apparatus 2 opens the exhaust valve 201 c and operates the vacuum pump 201 a to discharge the gas in the processing chamber 212 through the exhaust pipe 201 b to the outside of the processing chamber 212 , thereby reducing (depressurizing) the gas pressure in the processing chamber 212 .

[0089] The high-frequency power source 216 can be a power source that supplies, for example, a 27 MHz high-frequency current to the induction coil 215. When nitrogen gas is introduced into the plasma chamber 213 and the high-frequency current is supplied to the induction coil 215, a plasma PLM is formed within the plasma chamber 213. Since ions contained in the plasma by the induction coil 215 are trapped within the plasma chamber 213, a capture plate may not be required between the plasma chamber 213 and the processing chamber 212. The induction coil 215, high-frequency power source 216, and nitrogen gas supply unit 220A form a plasma generation source, generating the plasma PLM within the plasma chamber 213 and supplying nitrogen radicals in the plasma to the bonding surfaces of substrates W1 and W2 supported by the stage 210. In addition, here, the activation treatment apparatus 2 is described using an ICP generating apparatus including an induction coil 215 and a high-frequency power supply 216 as an example, but the present invention is not limited to this. Alternatively, a capacitively coupled plasma (CCP) generating apparatus including a flat plate electrode disposed outside the plasma chamber 213, a high-frequency power supply electrically connected to the flat plate electrode, and a capture plate partially disposed between the plasma chamber 213 and the processing chamber 212 for capturing ions in the plasma may also be used. In this case, the high-frequency power supply can be a power supply that applies a high-frequency bias of, for example, 27 MHz. The power supplied from the high-frequency power supply into the plasma chamber is then set to, for example, 250 W. The bias application unit 217 is a high-frequency power supply that applies a high-frequency bias to the substrates W1 and W2 supported by the stage 210. For example, a bias application unit that generates a high-frequency bias of 13.56 MHz can be used as this bias application unit 217. In this manner, the bias applying unit 217 applies a high-frequency bias to the substrates W1 and W2, generating a sheath region near the interface between the substrates W1 and W2 where ions with kinetic energy repeatedly collide with the substrates W1 and W2. The interface between the substrates W1 and W2 is then etched by the ions with kinetic energy present in this sheath region.

[0090] like Figure 3 As shown, the substrate bonding apparatus 1 includes a chamber 120, a stage 141 as a first substrate holding portion, a head 142 as a second substrate holding portion, a stage driving portion 143, a head driving portion 144, substrate heating portions 1481 and 1482, and a position measuring portion 500. Furthermore, the substrate bonding apparatus 1 includes a distance measuring portion 1493 for measuring the distance between the stage 141 and the head 142. In the following description, Figure 1The ±Z directions in the figure are described as vertical directions, and the XY directions are described as horizontal directions. The chamber 120 maintains the area S1 where the substrates W1 and W2 are arranged at a vacuum level higher than a preset reference vacuum level. The chamber 120 is connected to the vacuum pump 121a via the exhaust pipe 121b and the exhaust valve 121c. When the exhaust valve 121c is opened and the vacuum pump 121a is activated, the gas in the chamber 120 is discharged to the outside of the chamber 120 through the exhaust pipe 121b, and the chamber 120 is maintained in a reduced pressure environment. In addition, the exhaust volume can be adjusted by changing the opening and closing amount of the exhaust valve 121c, so that the gas pressure (vacuum level) in the chamber 120 can be adjusted. In addition, a window portion 120a is provided in a portion of the chamber 120 for measuring the relative position between the substrates W1 and W2 by the position measuring unit 500.

[0091] The stage driving unit 143 is a holding unit driving unit that can move the stage 141 in the X and Y directions or rotate it around the Z axis.

[0092] The head driving unit 144 has the function of moving the head 142 vertically upward or downward (refer to Figure 1 The lifting drive unit 146 that lifts and lowers the head 142 in the XY direction, the XY direction drive unit 145 that moves the head 142 in the XY direction, and the rotation direction of the head 142 around the Z axis (refer to Figure 1 The rotation drive unit 147 is configured to rotate the head 142 in a direction perpendicular to the vertical direction (XY direction, rotation direction around the Z axis). The head drive unit 144 includes a piezoelectric actuator 1456 for adjusting the inclination of the head 142 relative to the stage 141, and a first pressure sensor 1457 for measuring the pressure applied to the head 142. The XY direction drive unit 145 and the rotation drive unit 147 move the head 142 relative to the stage 141 in the X direction, the Y direction, and the rotation direction around the Z axis, so that the substrate W1 held by the stage 141 and the substrate W2 held by the head 142 can be aligned.

[0093] By moving the head 142 vertically, the lift drive 146 moves the stage 141 and the head 142 toward each other, or moves the head 142 away from the stage 141. The lift drive 146 moves the head 142 vertically downward, bringing the substrate W1 held by the stage 141 into contact with the substrate W2 held by the head 142. With substrates W1 and W2 in contact, the lift drive 146 applies a driving force to the head 142 toward the stage 141, pressing substrate W2 against substrate W1. Furthermore, the lift drive 146 is equipped with a pressure sensor 148 that measures the driving force applied by the lift drive 146 to the head 142 toward the stage 141. The pressure value measured by the pressure sensor 148 can be used to detect the pressure applied to the bonding surface between substrates W1 and W2 when substrate W2 is pressed against substrate W1 by the lift drive 146. The pressure sensor 148 is composed of, for example, a load cell.

[0094] like Figure 4A As shown, there are three piezoelectric actuators 1456 and three first pressure sensors 1457. The three piezoelectric actuators 1456 and the three first pressure sensors 1457 are arranged between the head 142 and the XY direction drive unit 145. The three piezoelectric actuators 1456 are fixed at three positions on the upper surface of the head 142 that are not on the same straight line, and are arranged at three positions approximately equally spaced along the circumferential direction of the head 142 in the circumference of the upper surface of the head 142 that is approximately circular when viewed from above. The three first pressure sensors 1457 are respectively connected to the upper end of the piezoelectric actuator 1456 and the lower surface of the XY direction drive unit 145. The three piezoelectric actuators 1456 are respectively retractable in the up and down directions. Then, by the retraction of the three piezoelectric actuators 1456, the inclination of the head 142 around the X-axis and around the Y-axis and the position of the head 142 in the up and down directions are finely adjusted. For example, as Figure 4B As shown by the dotted line, when the head 142 is tilted relative to the carrier 141, one of the three piezoelectric actuators 1456 is extended (refer to Figure 4B By finely adjusting the posture of the head 142 (as indicated by arrow AR3), the lower surface of the head 142 can be kept approximately parallel to the upper surface of the stage 141. Furthermore, the three pressure sensors 1457 measure the pressure applied at three locations on the lower surface of the head 142. Then, by driving the three piezoelectric actuators 1456 individually so that the pressures measured by the three pressure sensors 1457 are equal, the lower surface of the head 142 can be maintained approximately parallel to the upper surface of the stage 141, and the substrates W1 and W2 can be brought into contact.

[0095] The stage 141 and the head 142 are arranged in the chamber 120 to face each other in the vertical direction. The stage 141 is a first substrate holding portion that holds the substrate W1 on its upper surface, and the head 142 is a second substrate holding portion that holds the substrate W2 on its lower surface. Here, the stage 141 supports the substrate W1 in a state where its upper surface is in contact with the entire surface of the substrate W1, and the head 142 supports the substrate W2 in a state where its lower surface is in contact with the entire surface of the substrate W2. The stage 141 and the head 142 are formed of a light-transmitting material such as light-transmitting glass. Figure 5A as well as Figure 5B As shown, the stage 141 and the head 142 are provided with electrostatic suction holders 1411, 1412, 1413, 1421, 1422, and 1423 for holding substrates W1 and W2. The electrostatic suction holders 1411 and 1421 hold the periphery of the substrates W1 and W2. Furthermore, circular through-holes 141b and 142b are provided in the center of the stage 141 and the head 142. Furthermore, air pressure detection units (not shown) are provided on the stage 141 and the head 142 to detect the air pressure in the area between the stage 141 and the head 142 and the substrates W1 and W2 when gas is ejected from the gas ejection holes 1411c and 1421c described later.

[0096] Electrostatic suction holders 1411, 1412, 1421, and 1422 are first electrostatic suction holders disposed in an annular first area A1 of the carrier 141 and head 142, facing the substrates W1 and W2, while the carrier 141 and head 142 hold the substrates W1 and W2. Electrostatic suction holders 1411 and 1412 are disposed within two pre-defined sub-annular areas A11 and A12, centered on the center of the carrier 141, within the first area A1 of the carrier 141. Electrostatic suction holders 1411 and 1412 each hold a portion of the substrate W1 positioned at a predetermined substrate holding position on the carrier 141, facing the two sub-annular areas A11 and A12, respectively. Furthermore, electrostatic suction holders 1421 and 1422 are also disposed within two pre-defined sub-annular areas A11 and A12, centered on the center of the head 142, within the first area A1 of the head 142. Then, electrostatic chucks 1421 and 1422 each hold a portion of substrate W2 positioned at a predetermined substrate holding position on head 142, facing two sub-annular areas A11 and A12, respectively. Here, if the outer dimensions of substrates W1 and W2 are the same as those of first area A1, the substrate holding position is set to coincide with that of first area A1.

[0097] Electrostatic suction bases 1411 and 1421 each have, in first area A1, multiple electrode terminals 1411b and 1412b extending radially from the center of stage 141 and head 142 toward the periphery of the stage 141 and head 142, and two annular terminal electrodes 1411a and 1421a arranged circumferentially of the stage 141 and head 142. Multiple electrode terminals 1411b and 1412b are first electrode terminals extending radially from each of the two terminal electrodes 1411a and 1421a toward the other terminal electrode 1421a and 1411a. Terminal electrodes 1411a and 1421a correspond to third and fourth terminal electrodes, respectively. Terminal electrode 1411a has a smaller diameter than terminal electrode 1421a and is arranged toward the center of stage 141 and head 142. The plurality of elongated electrode terminals 1411b and 1421b are arranged in the first region A1 of the stage 141 and the head 142 in an alternating manner along the circumferential direction of the first region A1. Figure 6A As shown, the terminal electrodes 1411a and 1421a respectively have bent portions 1411ab and 1421ab and elongated connecting portions 1411aa and 1421aa. The bent portions 1411ab and 1421ab protrude in a direction away from the other terminal electrode 1411a and 1421a in a plan view. The connecting portions 1411aa and 1421aa extend along the circumferential direction of the stage 141 and the head portion 142 and connect the ends of two adjacent bent portions 1411ab and 1421ab in the circumferential direction of the stage 141 and the head portion 142. The maximum width Wi4 between the bent portions 1411ab and 1421ab and the connecting portions 1411aa and 1421aa in the radial direction of the stage 141 and the head portion 142 is set to be longer than the width of an alignment mark described later, for example.

[0098] Furthermore, electrostatic suction bases 1412 and 1422 also have, in first area A1, multiple electrode terminals 1412b and 1422b extending radially from the center of stage 141 and head 142 toward the periphery of the stage 141 and head 142, respectively, as well as two annular terminal electrodes 1412a and 1422a arranged circumferentially of the stage 141 and head 142. The multiple electrode terminals 1412b and 1422b are first electrode terminals extending radially from each of the two terminal electrodes 1412a and 1422a toward the other terminal electrode 1422a and 1412a. Terminal electrodes 1412a and 1422a serve as third and fourth terminal electrodes, respectively. Terminal electrode 1412a has a smaller diameter than terminal electrode 1422a and is arranged toward the center of stage 141 and head 142. Furthermore, in the first area A1, electrostatic suction bases 1412 and 1422 are disposed inside the electrostatic suction bases 1411 and 1421. Multiple elongated electrode terminals 1412b and 1422b are arranged in an alternating pattern along the circumference of the first area A1 of the carrier 141 and head 142. The terminal electrodes 1411a, 1421a, 1422a, and 1412a, as well as the multiple electrode terminals 1411b, 1421b, 1412b, and 1422b, are formed, for example, of metal. Thus, the electrostatic suction bases 1411, 1412, 1421, and 1422 each have multiple electrode terminals 1411b, 1412b, 1421b, and 1422b extending radially from the center of the carrier 141 and head 142 toward the periphery of the carrier 141 and head 142 in the first area A1. Thus, the substrate bonding apparatus 1 can photograph the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, MK2c provided on the substrates W1 and W2 through the gaps between the plurality of electrode terminals 1411b, 1412b, 1421b, 1422b through the photographing units 501A, 501B, 501C described later.

[0099] Furthermore, grooves 1411d and 1421d are formed in the sub-annular region A11 of the first region A1 of the stage 141 and the head portion 142. These grooves 1411d and 1421d have portions extending radially from the center of the stage 141 and the head portion 142 toward the periphery of the stage 141 and the head portion 142. Furthermore, gas outlet holes 1411c and 1421c connected to the gas supply unit 1492 are provided in portions of these grooves 1411d and 1421d. These gas outlet holes 1411c and 1421c serve as gas outlets for discharging gas, and the grooves 1411d and 1421d serve as second recesses connected to the gas outlet holes 1411c and 1412c. The width of the grooves 1411d and 1421d is set to, for example, approximately 0.2 mm. The grooves 1411d and 1421d have portions extending along the directions in which the plurality of electrode terminals 1411b and 1412b extend. Then, in the electrostatic suction seats 1411 and 1412, grooves 1411d and 1421d are provided between the plurality of electrode terminals 1411b electrically connected to the terminal electrode 1411a and the plurality of electrode terminals 1412b connected to the terminal electrode 1421a. Furthermore, in the sub-annular region A12 of the first region A1 of the carrier 141 and the head 142, a groove (not shown) is also formed, having a portion extending radially from the central portion of the carrier 141 and the head 142 toward the periphery of the carrier 141 and the head 142. Furthermore, a gas outlet hole (not shown) connected to the gas supply unit 1492 is provided in a portion of these grooves 1411d and 1421d. The gas outlet hole provided in this sub-annular region A12 also corresponds to a gas outlet portion for discharging gas, and the groove provided in the sub-annular region A12 also corresponds to a second groove constituting a second recessed portion connected to the gas outlet hole provided in the sub-annular region A12. This groove also has a portion extending along the extension direction of each of the plurality of electrode terminals 1411b and 1412b. Then, the grooves 1411d and 1421d are provided in the electrostatic suction bases 1421 and 1422 between the plurality of electrode terminals 1421b electrically connected to the terminal electrode 1411a and the plurality of electrode terminals 1412b connected to the terminal electrode 1421a.

[0100] The electrostatic suction bases 1413 and 1423 are second electrostatic suction bases provided in the second area A2 inside the first area A1 of the carrier 141 and the head 142. Figure 5BAs shown, the electrostatic suction base 1413, 1423 has a plurality of electrode terminals 1413b, 1423b extending radially from the center of the carrier 141, the head 142 toward the periphery of the carrier 141, the head 142, and two annular terminal electrodes 1413a, 1423a arranged along the circumferential direction of the carrier 141, the head 142. The plurality of electrode terminals 1413b, 1423b are second electrode terminals extending from the two terminal electrodes 1413a, 1423a to the other terminal electrodes 1423a, 1413a along the radial direction of the carrier 141, the head 142. Also, as shown in FIG. Figure 6B As shown, the width of each of the plurality of electrode terminals 1413b and 1423b in a direction perpendicular to their extending direction in a plan view widens toward the periphery of the stage 141 and the head portion 142, forming a wedge-shaped shape in a plan view. The terminal electrodes 1413a and 1423a respectively correspond to first terminal electrodes electrically connected to the plurality of electrode terminals 1413b and second terminal electrodes electrically connected to the plurality of electrode terminals 1423b.

[0101] Furthermore, grooves 1413d and 1423d are formed in the second area A2 of the stage 141 and the head 142, each having a portion extending radially from the center of the stage 141 and the head 142 toward the periphery of the stage 141 and the head 142. Furthermore, gas outlet holes 1413c and 1423c connected to the gas supply unit 1492 are provided in portions of the grooves 1413d and 1423d of the stage 141 and the head 142. These gas outlet holes 1413c and 1423c function as gas outlets for discharging gas, and the grooves 1413d and 1423d function as first grooves forming first recessed portions connected to the gas outlet holes 1413c and 1423c. The width Wi1 of the grooves 1413d and 1423d is set to, for example, approximately 0.2 mm. The grooves 1413d and 1423d have portions extending along the respective extending directions of the plurality of electrode terminals 1413b and 1423b. Then, in the electrostatic suction bases 1413 and 1423, grooves 1413d and 1423d are provided between the plurality of electrode terminals 1413b electrically connected to the terminal electrode 1413a and the plurality of electrode terminals 1423b connected to the terminal electrode 1423a. Figure 7A As shown, the width Wi3 between the surfaces of the stage 141 and the head 142 of the electrostatic suction holders 1413 and 1423 is set to be shorter than the depth Wi2 of the grooves 1413d and 1423d. For example, when substrates W1 and W2 are sapphire or glass substrates, the width is set to be greater than 0.05 mm and less than 0.1 mm. Furthermore, when substrates W1 and W2 are Si substrates, the width can be set to approximately 5 mm. The terminal electrodes 1413a and 1423a and the plurality of electrode terminals 1413b and 1423b are formed from a transparent conductive film containing a transparent conductive material such as ITO.

[0102] The electrostatic suction holders 1411, 1412, 1413, 1421, 1422, and 1423 are connected to a suction holder driving unit 1491. The suction holder driving unit 1491 drives the electrostatic suction holders 1411, 1412, 1413, 1421, 1422, and 1423 by applying a voltage to each of the electrostatic suction holders 1411, 1412, 1413, 1421, 1422, and 1423 based on a control signal input from the control unit 9. Furthermore, the suction holder driving unit 1491 drives the electrostatic suction holders 1411, 1412, 1413, 1421, 1422, and 1423 independently of one another based on a control signal input from the control unit 9.

[0103] When the substrates W1 and W2 are removed from the electrostatic chucks 1411 and 1412, the chuck driver 1491 applies a pulse voltage to the two terminal electrodes 1411a and 1412a of the electrostatic chucks 1411 and 1412. Furthermore, when the substrates W1 and W2 are removed from the electrostatic chucks 1421 and 1422, the chuck driver 1491 also applies a pulse voltage between the two terminal electrodes 1421a and 1422a of the electrostatic chucks 1421 and 1422. Furthermore, when the substrates W1 and W2 are removed from the electrostatic chucks 1431 and 1432, the chuck driver 1491 also applies a pulse voltage between the two terminal electrodes 1431a and 1432a of the electrostatic chucks 1413 and 1423. Here, the suction seat driving unit 1491 alternately applies pulse voltages of different polarities between the terminal electrodes 1411a, 1412a (1421a, 1422a, 1431a, 1432a), and gradually reduces the amplitude of the pulse voltage. In addition, the pulse interval of each pulse voltage is determined in consideration of the discharge time of the carrier 141 and the head 142. In addition, the pulse width of each pulse voltage can be set to be equal to each other, or it can be set to increase with time. Alternatively, the pulse widths of arbitrarily selected five or less pulse voltages can be set to be equal to each other. In addition, the pulse interval can be set to be equal to each other, or it can be set to increase with time. Alternatively, the pulse intervals of arbitrarily selected four or less pulses can be set to be equal to each other. The gas supply unit 1492 supplies gas to the gas outlet holes 1411c, 1421c, 1412c, 1422c, 1413c, and 1423c based on the control signal input from the control unit 9, so that gas is discharged from the gas outlet holes 1411c, 1421c, 1412c, 1422c, 1413c, and 1423c.

[0104] In addition, if Figure 7BAs shown, the stage 141 and the head 142 include a pressing mechanism 1441 for pressing the center portion of the substrate W1, and a pressing mechanism 1442 for pressing the center portion of the substrate W2. The pressing mechanism 1441 is provided in the center portion of the stage 141, and the pressing mechanism 1442 is provided in the center portion of the head 142. The pressing mechanism 1441 includes a pressing portion 1441a that can be inserted and retracted toward the head 142 through a through-hole 141b in the stage 141, and a pressing drive portion 1441b that drives the pressing portion 1441a. The pressing mechanism 1442 includes a pressing portion 1442a that can be inserted and retracted toward the stage 141 through a through-hole 142b in the head 142, and a pressing drive portion 1442b that drives the pressing portion 1442a. The pressing drive portions 1441b and 1442b are, for example, voice coil motors. Furthermore, the pressing portions 1441a and 1442a perform pressure control to maintain a constant pressure on the substrates W1 and W2, or perform position control to maintain a constant contact position between the substrates W1 and W2. For example, by position-controlling the pressing portion 1441a and pressure-controlling the pressing portion 1442a, the substrates W1 and W2 are pressed at a constant pressure and at a constant position.

[0105] Return to Figure 1 The distance measuring unit 1493 is, for example, a laser rangefinder, which measures the distance between the stage 141 and the head 142 without contacting the stage 141 and the head 142. When the distance measuring unit 1493 irradiates a laser beam from above the transparent head 142 toward the stage 141, it measures the distance between the stage 141 and the head 142 based on the difference between the reflected light from the upper surface of the stage 141 and the reflected light from the lower surface of the head 142. Figure 4A As shown, the distance measuring unit 1493 measures the distances between parts P11, P12, and P13 at three positions on the upper surface of the carrier 141 and parts P21, P22, and P23 at three positions on the lower surface of the head 142 facing parts P11, P12, and P13 in the Z direction.

[0106] For example, Figure 8As shown, the position measurement unit 500 includes three imaging units 501A, 501B, and 501C, a reflector 502, and imaging unit position adjustment units 503A, 503B, and 503C. The unit measures the positional deviation between substrates W1 and W2 in directions perpendicular to the vertical direction (XY directions and the rotational direction about the Z axis). The three imaging units 501A, 501B, and 501C are arranged around the reflector 502 so that the angles DAB, DBC, and DCA of the two adjacent optical axes JLA and JLB (JLB and JLC, and JLC and JLA) formed on the acute angle side of the circumferential direction of the reflector 502 are equal. The reflector 502 has reflecting surfaces 502a, 502b, and 502c formed on the portions facing the three imaging units 501A, 501B, and 501C, respectively. The imaging units 501A, 501B, and 501C and the reflective member 502 are arranged on the side of the stage 141 opposite to the side on which the substrate W1 is held. The imaging units 501A, 501B, and 501C are each a first imaging unit having imaging elements 511A, 511B, and 511C and a coaxial illumination system (not shown). The coaxial illumination system uses a light source that emits light (e.g., infrared light) that passes through the substrates W1 and W2, the stage 141, and the window 120a provided in the chamber 120.

[0107] For example, Figure 9A as well as Figure 9B As shown, at least three alignment marks MK1a, MK1b, and MK1c are provided on substrate W1, and at least three alignment marks MK2a, MK2b, and MK2c are provided on substrate W2. One of these alignment marks MK1a, MK1b, and MK1c and the alignment marks MK2a, MK2b, and MK2c corresponds to a first alignment mark, and the other corresponds to a second alignment mark. The substrate bonding apparatus 1 uses a position measuring unit 500 to identify the positions of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c provided on the two substrates W1 and W2, and then performs a position alignment operation (alignment operation) on the two substrates W1 and W2. Specifically, the substrate bonding apparatus 1 first uses the position measuring unit 500 to identify the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c provided on the substrates W1 and W2, and then performs a rough alignment operation (coarse alignment operation) on the substrates W1 and W2, thereby bringing the two substrates W1 and W2 into contact with each other. Thereafter, the substrate bonding apparatus 1 simultaneously recognizes the alignment marks MK1a and MK2a (MK1b and MK2b and MK1c and MK2c) provided on the two substrates W1 and W2 by the position measuring unit 500, thereby performing a more precise alignment operation (fine alignment operation).

[0108] Here, as Figure 3As indicated by dashed arrows SC1 and SC2, light emitted from the light source of the coaxial illumination system of the imaging unit 501A is reflected by the reflective surface 502a of the reflective member 502 and travels upward, passing through the window 120a of the chamber 120 and partly or completely the substrates W1 and W2. Light that has traveled partly or completely through the substrates W1 and W2 is reflected by the alignment marks MK1a and MK2a on the substrates W1 and W2, travels downward, passes through the window 120a, and is reflected by the reflective surface 502a of the reflective member, before entering the imaging element 511A of the imaging unit 501A. Furthermore, light emitted from the light source of the coaxial illumination system of the imaging unit 501B is reflected by the reflective surface 502b of the reflective member 502 and travels upward, passing through the window 120a of the chamber 120 and partly or completely the substrates W1 and W2. Part or all of the light passing through the substrates W1 and W2 is reflected by the alignment marks MK1b and MK2b of the substrates W1 and W2, travels downward, passes through the window portion 120a, and is reflected by the reflection surface 502b of the reflection member 502, and enters the imaging element 511B of the imaging unit 501B. Figure 3 Not shown, but from Figure 8 The light emitted from the light source of the coaxial illumination system of the imaging unit 501C shown is reflected by the reflective surface 502c of the reflective member 502 and travels upward, passing through the window 120a of the chamber 120 and part or all of the substrates W1 and W2. The light that has passed through part or all of the substrates W1 and W2 is reflected by the alignment marks MK1c and MK2c of the substrates W1 and W2, travels downward, passes through the window 120a, and is reflected by the reflective surface 502c of the reflective member 502, and is incident on the imaging element 511C of the imaging unit 501C. In this way, as Figure 10A as well as Figure 10B As shown, the position measuring unit 500 acquires a captured image GAa including the alignment marks MK1a and MK2a of the two substrates W1 and W2, a captured image GAb including the alignment marks MK1b and MK2b of the two substrates W1 and W2, and a captured image GAc including the alignment marks MK1c and MK2b of the two substrates W1 and W2. Furthermore, the imaging units 501A, 501B, and 501C perform the imaging operations for the captured images GAa, GAb, and GAc substantially simultaneously. Furthermore, the three imaging units 501A, 501B, and 501C capture images of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c in the first area A1 formed by the two sub-annular areas A11 and A12 of the stage 141 and the head 142.

[0109] The imaging unit position adjustment units 503A, 503B, and 503C each move the imaging units 501A, 501B, and 501C in the vertical direction or in a horizontal direction perpendicular to the optical axes and vertical direction of the imaging units 501A, 501B, and 501C. Each imaging unit position adjustment unit 503A, 503B, and 503C includes an imaging unit holder (not shown) that holds the imaging units 501A, 501B, and 501C, and an actuator (not shown) that drives the imaging unit holder in the vertical and horizontal directions. By moving the imaging units 501A, 501B, and 501C in the vertical and horizontal directions, the imaging positions of the substrates W1 and W2 can be moved in a direction perpendicular to the thickness direction of the substrates W1 and W2.

[0110] return Figure 3 , the substrate heating parts 1481 and 1482 are, for example, electric heaters, such as Figure 7B As shown, they are respectively arranged on the stage 141 and the head 142. The substrate heating parts 1481 and 1482 heat the substrates W1 and W2 by transferring heat to the substrates W1 and W2 held by the stage 141 and the head 142. In addition, by adjusting the heat generated by the substrate heating parts 1481 and 1482, the temperature of the substrates W1 and W2 and their bonding surfaces can be adjusted. The substrate heating parts 1481 and 1482 are connected to a heating part driving part (not shown), and the heating part driving part is based on the Figure 1 The control signal input from the control unit 9 shown in FIG. 1 supplies current to the substrate heating units 1481 and 1482 , causing the substrate heating units 1481 and 1482 to generate heat.

[0111] The inspection device 7 detects the position deviation of all alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c provided on the substrates W1 and W2 bonded to each other. Figure 11 As shown, the apparatus includes a stage 71 on which substrates W1 and W2 bonded to each other are placed, a light source 72, an imaging unit 73, and a horizontal drive unit 74. The stage 71 is formed of a material transparent to the light emitted from the light source 72. The light source 72 then emits light toward the substrates W1 and W2 from the side of the stage 71 opposite to the side on which the substrates W1 and W2 are placed. The imaging unit 73 is a second imaging unit having an imaging element 731. The light emitted from the light source 72 passes through the stage 71 and the substrates W1 and W2 and enters the imaging element 731. As indicated by arrow AR3, the horizontal drive unit 74 moves the stage 71 in a horizontal direction perpendicular to the thickness direction of the stage 71.

[0112] Return to Figure 1The control unit 9 is, for example, a control system having a personal computer, which has a central processing unit (CPU) and a memory. The memory stores the program executed by the CPU. The control unit 9 converts the measurement signals input from the pressure sensor 148 and the position measuring unit 150 to obtain measurement information. In addition, the control unit 9 converts the captured image signals input from the imaging units 501A, 501B, 501C of the substrate bonding device 1, the imaging unit 73 of the inspection device 7, and the conveying device imaging unit 844 of the conveying device 84 to obtain captured image information. In addition, the control unit 9 controls the actions of these by outputting control signals to the suction seat driving unit 1491, the gas supply unit 1492, the imaging unit position adjustment unit 503A, 503B, 503C, the piezoelectric actuator 1456, the pressing driving unit 1441b, 1432b, the heating unit driving unit, the stage driving unit 143, and the head driving unit 144 of the substrate bonding device 1, respectively. Figure 10B As shown, the control unit 9 calculates the positional deviations dxa and dya between a pair of alignment marks MK1a and MK2a provided on the substrates W1 and W2 based on the captured image GAa obtained from the imaging unit 501A. Figure 10B The figure shows a state where one set of alignment marks MK1a and MK2a are misaligned. Similarly, the control unit 9 calculates the relative positional deviations dxb, dyb, dxc, and dyc between the other two sets of alignment marks MK1b, MK2b, MK1c, and MK2c on substrates W1 and W2 based on the captured images GAb and GAc obtained from the imaging units 501B and 501C. The control unit 9 then calculates the relative positional deviations dx, dy, and dθ between the two substrates W1 and W2 in the X and Y directions, as well as the rotational direction around the Z axis, based on the positional deviations dxa, dya, dxb, dyb, dxc, and dyc of these three sets of alignment marks and the geometric relationship between the three sets of marks. The control unit 9 then moves the head 142 in the X and Y directions or rotates it around the Z axis to reduce the calculated positional deviations dx, dy, and dθ. In this way, the substrate bonding apparatus 1 performs an alignment operation to correct the horizontal positional deviations dx, dy, and dθ between the two substrates W1 and W2. Furthermore, the control unit 9 outputs control signals to the activation device 2 , the transport devices 82 , 84 , 86 , the cleaning device 3 , and the inspection device 7 to control the operations thereof.

[0113] Furthermore, when the central parts of the bonding surfaces of the substrates W1 and W2 are in contact with each other and the peripheries of the substrates W1 and W2 are held by the electrostatic suction seats 1411, 1412, 1421, and 1422, the control unit 9 controls the suction seat driving unit 1491 and the gas supply unit 1492 to release the electrostatic suction seats 1421 and 1422 from holding the substrates W1 and W2, so as to make the substrates W1 and W2 contact with each other on the entire surface. Next, the control unit 9 fills the entire grooves 1411d and 1412d provided in the sub-annular area A11 of the first area A1 with gas from the gas outlet holes 1411c and 1412c. It then controls the suction holder drive unit 1491 and the gas supply unit 1492 to release the electrostatic suction holders 1411, 1412, 1421, and 1422 from holding the substrates W1 and W2. At this time, the control unit 9 controls the flow rate of gas discharged from the gas outlet holes 1411c, 1421c, 1421c, and 1422c based on the air pressure detected by the aforementioned air pressure detection unit, so that the air pressure falls below the critical pressure. This results in full-surface contact between the substrates W1 and W2.

[0114] Furthermore, the control unit 9 calculates the positional deviation and positional deviation direction of each of the multiple alignment marks on substrates W1 and W2 based on the images captured by the imaging unit 73. The control unit 9 then separates the axial components (i.e., XY components) and the rotational components of the positional deviation vector determined by the calculated positional deviation and positional deviation directions, along the two intersecting axes. Based on the separated XY and rotational components, the control unit 9 calculates a horizontal offset vector, which reflects the axial and rotational offsets. The axial offset is the XY offset of substrate W2 relative to substrate W1 when substrates W1 and W2 are bonded together, and the rotational offset is the rotational offset. Furthermore, the control unit 9 separates the warp component of the positional deviation vector determined by the calculated positional deviation and positional deviation direction. Based on the separated warp component, the control unit 9 calculates a protrusion offset. The protrusion offset is the offset of the central portion of substrate W1 relative to the peripheral portion of substrate W1 toward substrate W2 when substrates W1 and W2 are bonded together. Here, each time a predetermined number of substrates W1 and W2 are bonded to each other, the control unit 9 calculates a horizontal offset vector and a protruding offset based on statistical values ​​(e.g., average values ​​or median values) of the positional deviations and directions of the positional deviations obtained for the plurality of bonded substrates W1 and W2. Furthermore, the control unit 9 calculates the horizontal offset vector so as to minimize the positional deviations of each of the plurality of alignment mark groups captured by the imaging unit 73. The control unit 9 then stores information indicating the calculated horizontal offset vector and protruding offset in a memory.

[0115] Furthermore, the control unit 9 calculates the positional deviation and direction of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c based on the images captured by the imaging units 501A, 501B, and 501C, respectively, when the substrates W1 and W2 are separated, and the images captured by the imaging units 501A, 501B, and 501C, respectively, of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c of the bonded substrates W1 and W2. The control unit 9 then updates the horizontal offset vector based on the calculated positional deviation and direction. Specifically, the control unit 9 calculates the positional deviation error based on the images captured by the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c after the substrates W1 and W2 are separated and alignment of the substrates W1 and W2 is completed. The control unit 9 then calculates the positional deviation of the substrates W1 and W2 during bonding by subtracting the aforementioned positional deviation error from the positional deviation calculated from the captured image of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c of the bonded substrates W1 and W2. Since the positional deviation error is not zero, the offset directions and offset amounts of the multiple alignment marks calculated based on the captured image by the imaging unit 73 of the inspection device 7 cannot be directly used. Here, the aforementioned horizontal offset vector is calculated for each set of alignment marks MK1a, MK2a (MK1b, MK2b, MK1c, MK2c). Alternatively, the control unit 9 may obtain information on the positional deviation and positional deviation direction of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c of the bonded substrates W1 and W2 from the inspection device 7 to calculate the aforementioned positional deviation error. The calculation of the horizontal offset vector can be performed by either the inspection device 7 or the substrate bonding device 1. When the inspection device 7 calculates the horizontal offset vector, information indicating the positional deviation error can be notified to the inspection device 7. Furthermore, the offset direction and amount calculated based on the image captured by the imaging unit 73 of the inspection device 7 are common to all alignment mark groups on substrates W1 and W2. Meanwhile, the horizontal offset vector reflecting the offset direction and amount corrected based on the aforementioned positional deviation error is determined separately for each alignment mark group MK1a, MK2a (MK1b, MK2b, MK1c, MK2c).

[0116] Next, regarding the substrate bonding system according to this embodiment, the flow of operations from the time when the substrates W1 and W2 are loaded into the bonding system to the time when the substrates W1 and W2 are bonded and taken out of the substrate bonding system is described with reference to FIG. Figures 12 to 17B Here, substrates W1 and W2 are pre-configured to the inlets 811 and 812. As substrates W1 and W2, for example, they are composed of any one of Si substrates, glass substrates, oxide substrates (for example, silicon oxide (SiO2) substrates, aluminum oxide substrates (Al2O3) substrates, etc.), and nitride substrates (for example, silicon nitride (SiN), aluminum nitride (AlN)). In addition, at least one of substrates W1 and W2 may have a metal portion and an insulating film exposed on its bonding surface. Alternatively, at least one of substrates W1 and W2 may have an exposed insulating film formed by depositing oxide or nitride on its bonding surface. Here, the substrate W1 is described as a glass substrate or an oxide substrate, and the substrate W2 is described as a Si substrate or a nitride substrate. In addition, for example, the substrate W2 held by the head 142 in the substrate bonding device 1 is configured at the inlet 811, and for example, the substrate W1 placed on the carrier 141 in the substrate bonding device 1 is configured at the inlet 812.

[0117] First, if Figure 12 As shown, the substrate bonding system transports the substrates W1 and W2 from the inlet ports 811 and 812 to the load lock portion 85 via the transport robot 821 of the transport device 82 (step S101). Next, the substrate bonding system transports the substrates W1 and W2 from the load lock portion 85 to the activation treatment device 2 via the transport robot 861 of the transport device 86 (step S102). Next, the activation treatment device 2 performs an activation treatment step of activating the bonding surface by performing reactive ion etching using nitrogen gas and nitrogen radical irradiation on at least one of the bonding surfaces of the substrates W1 and W2 respectively bonded to each other (step S103). Here, the processing order of the activation treatment device 2 is different depending on the type of substrate that is the object of the activation treatment bonding surface. When the activation treatment device 2 performs activation treatment on the bonding surface of the substrate W1 (i.e., a glass substrate or an oxide substrate), first, the activation treatment device 2 activates the bonding surface by opening the activation treatment device 2. Figure 2The supply valve 222A shown introduces nitrogen gas from the nitrogen storage unit 221A into the processing chamber 212 through the supply pipe 223A. Next, while the activation process unit 2 stops supplying high-frequency current from the high-frequency power supply 216 to the induction coil 215, the bias application unit 217 applies a high-frequency bias to the substrates W1 and W2 mounted on the stage 210. This causes reactive ion etching (RIE) using nitrogen to be performed on the bonding surface of substrate W1. Next, the activation process unit 2 starts supplying high-frequency current from the high-frequency power supply 216 to the induction coil 215, generating a plasma using nitrogen gas. At this point, the activation process unit 2 stops applying the high-frequency bias to the substrate W1 via the bias application unit 217. This irradiates the bonding surface of substrate W1 with nitrogen radicals.

[0118] On the other hand, when the activation process apparatus 2 activates the bonding surface of a substrate W2 (i.e., a Si or nitride substrate), it first opens the supply valve 222B to introduce oxygen gas from the oxygen reservoir 221B into the processing chamber 212 through the supply pipe 223B. Next, while the activation process apparatus 2 stops supplying high-frequency current from the high-frequency power supply 216 to the induction coil 215, the bias application unit 217 applies a high-frequency bias to the substrate W2 mounted on the stage 210. This causes reactive ion etching (RIE) of the bonding surface of the substrate W2 using oxygen gas. Next, the activation process apparatus 2 stops supplying oxygen gas from the oxygen reservoir 221B into the processing chamber 212 by closing the supply valve 222B, thereby exhausting the oxygen gas from the processing chamber 212. Subsequently, the activation process apparatus 2 opens the supply valve 222A to introduce nitrogen gas from the nitrogen reservoir 221A into the processing chamber 212 through the supply pipe 223A. Next, the activation processing apparatus 2 begins supplying high-frequency current from the high-frequency power supply 216 to the induction coil 215, generating a plasma using nitrogen gas. At this point, the activation processing apparatus 2 stops applying the high-frequency bias to the substrate W2 via the bias application unit 217. This irradiates the bonding surface of the substrate W2 with nitrogen radicals.

[0119] Return to Figure 12, thereafter, the transport device 86 transports the substrates W1 and W2 from the activation treatment device to the load lock part 85 (step S104). Next, the transport robot 821 of the transport device 82 transports the substrates W1 and W2 from the load lock part 85 to the cleaning device 3 (step S105). Next, the cleaning device 3 sprays water onto the bonding surface of the substrates W1 and W2, and performs a water cleaning step for cleaning the bonding surface (step S106). Here, the cleaning device 3 sprays water with ultrasonic waves applied from the cleaning head onto the bonding surface of the substrates W1 and W2, and scans the carrier on which the substrates W1 and W2 are placed in the XY direction to clean the entire bonding surface of the substrates W1 and W2. Thus, foreign matter attached to the bonding surface of the substrates W1 and W2 is removed. Next, the cleaning device 3 stops the discharge of water from the cleaning head, and ends the cleaning process by rotating the carrier to rotate the dry substrate. Then, the transport device 82 transports the substrates W1 and W2 from the cleaning device 3 to the load lock 83 (step S107). Next, the transport device 84 removes the substrates W1 and W2 from the load lock 83, and the transport device imaging unit 844 images the circumferences of the substrates W1 and W2 (step S108).

[0120] Next, based on the captured image acquired from the transport device imaging unit 844, the control unit 9 determines whether the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for calculating the amount of positional deviation overlap with the electrostatic chucks 1411, 1412, 1421, and 1422 (step S109). Specifically, the control unit 9 pre-acquires information indicating the relative positional relationship between the positions of the electrostatic chucks 1411 and 1421 of the stage 141 and head 142 of the substrate bonding apparatus 1 and the positions of the substrates W1 and W2 held by the transport device 84. Based on this information, the control unit 9 determines whether the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for calculating the amount of positional deviation overlap with the electrostatic chucks 1411, 1412, 1421, and 1422. Here, when the control unit 9 determines that all the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used to calculate the position deviation amount do not overlap with the electrostatic suction seats 1411, 1412, 1421, and 1422 (step S109: No), the processing after step S111 is performed as it is.

[0121] On the other hand, when the control unit 9 determines that at least one of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used to calculate the position deviation amount overlaps with the electrostatic suction base 1411, 1412, 1421, and 1422 (step S109: Yes), for example, Figure 13A As shown in FIG, it is determined that the alignment marks MK1a and MK2a overlap with a portion of the electrostatic suction bases 1411 and 1421. In this case, as shown in FIG. Figure 12As shown, the control unit 9 rotates the stage 141 and receives the substrates W1 and W2, and rotates the stage 141 so that all the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used to calculate the position deviation of the substrates W1 and W2 do not overlap with the electrostatic suction bases 1411, 1412, 1421, and 1422 (step S110). Figure 13A In the state shown, when the carrier 141 is moved to Figure 13A The substrates W1 and W2 are received after being rotated in the direction of the arrow AR10. Here, the control unit 9 rotates the stage 141 so that all the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c are located between the plurality of electrode terminals 1411b, 1412b, 1421b, and 1422b of the electrostatic suction bases 1411, 1412, 1421, and 1422. Thus, for example, Figure 13B As shown, the alignment marks MK1a and MK2a of the substrates W1 and W2 used to calculate the position deviation of the substrates W1 and W2 are not overlapped with the electrostatic suction seats 1411 and 1421. In addition, the control unit 9 controls the imaging unit position adjustment units 503A, 503B, and 503C to move the imaging units 501A, 501B, and 501C to positions where they can capture the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c of the substrates W1 and W2, respectively. Return to Figure 12 After that, the transport device 84 transports the substrates W1 and W2 to the substrate bonding apparatus 1 (step S111). Next, the substrate bonding apparatus 1 performs a substrate bonding step (step S112).

[0122] Here, reference Figure 14 The substrate bonding steps performed by the substrate bonding system are described in detail. Figure 14 In the embodiment, it is assumed that the substrate bonding apparatus 1 has already stored the measurement results of the thicknesses of the substrates W1 and W2 in the memory of the control unit 9. First, the substrate bonding apparatus 1 performs a distance measurement step (step S1) in which the distance measuring unit 1493 measures the distance between the stage 141 and the head 142 at three positions on the stage 141 and the head 142.

[0123] Next, the substrate bonding device 1 calculates the distance between the bonding surface of the substrate W1 and the bonding surface of the substrate W2 based on the distance between the carrier 141 and the head 142 measured at three positions of the carrier 141 and the head 142 and the thickness of the substrates W1 and W2. Then, based on the calculated distance, the substrate bonding device 1 moves the head 142 vertically downward to bring the substrates W1 and W2 closer to each other (step S2). Next, the substrate bonding device 1 calculates the position deviation of the substrate W1 relative to the substrate W2 in a state where the substrates W1 and W2 are separated (step S3). Here, first, the control unit 9 obtains the captured images GAa, GAb and GAc of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c and MK2c of the portions facing the first area A1 of the two substrates W1 and W2 set in a non-contact state from the capturing units 501A, 501B and 501C of the position measuring unit 500 (reference Figure 10A ). Then, as described above, the control unit 9 calculates the positional deviations dx, dy, and dθ of the two substrates W1 and W2 in the X direction, Y direction, and rotational direction around the Z axis, respectively, based on the three captured images GAa, GAb, and GAc. Next, the substrate bonding apparatus 1 performs alignment by moving the substrate W2 relative to the substrate W1 to correct the calculated positional deviations dx, dy, and dθ (step S4). Here, the substrate bonding apparatus 1 moves the stage 141 in the X direction, Y direction, and rotational direction around the Z axis to reduce the positional deviations dx, dy, and dθ.

[0124] The substrate bonding apparatus 1 then moves the head 142 closer to the stage 141, thereby bringing the substrates W1 and W2 closer together (step S5). The substrate bonding apparatus 1 positions the head 142 so that the gap between the substrates W1 and W2 is optimal, with the substrates W1 and W2 bent, so that their centers are in contact. In this state, the peripheries of the substrates W1 and W2 are approximately 50 μm apart.

[0125] Next, the substrate bonding device 1 performs the first contact step (step S6) of bringing the central portion of the substrate W1 into contact with the central portion of the substrate W2 by bending the substrates W1 and W2 while the substrates W1 and W2 are separated from each other. First, as indicated by the arrow AR11 in the figure, the substrate bonding device 1 fills the entire grooves 1413d and 1423d provided in the second area A2 with gas from the gas outlet holes 1413c and 1423c provided in the second area A2 of the stage 141 and the head 142. Thereafter, the substrate bonding device 1 releases the electrostatic suction seats 1413 and 1423 of the stage 141 and the head 142 from holding the substrate W1. At this time, the control unit 9 controls the gas supply unit 1492 to discharge gas from the gas outlet hole 1413c so that the pressure at which the substrate W1 contacts the substrate W2 is less than the critical pressure at which the substrates W1 and W2 are temporarily bonded. Specifically, the control unit 9 controls the flow rate of the gas discharged from the gas outlet holes 1413c and 1423c based on the air pressure detected by the aforementioned air pressure detection unit, so that the air pressure is lower than the critical pressure. Next, the substrate bonding device 1 holds the periphery of the substrate W1 in the state of the electrostatic suction seats 1411 and 1412 of the carrier 141, and presses the central part of the substrate W1 toward the substrate W2 through the pressing portion 1441a. Here, the state in which the periphery of the substrate W1 is held by the electrostatic suction seats 1411 and 1412 refers not only to the case in which a voltage is applied to the electrostatic suction seats 1411 and 1412 of the carrier 141 from the suction seat driving unit 1491, but also includes the state in which no voltage is applied to the electrostatic suction seats 1411 and 1412, and the periphery of the substrate W1 is tightly attached to the electrostatic suction seats 1411 and 1412 due to the residual electrostatic force of the electrostatic suction seats 1411 and 1412. Thus, as Figure 15B As shown, the substrate W1 is bent in such a manner that its central portion W1c protrudes toward the substrate W2. In addition, the substrate bonding device 1 presses the central portion of the substrate W2 toward the substrate W1 side by the pressing portion 1442a while the electrostatic suction seats 1421 and 1422 of the head 142 hold the periphery of the substrate W2. Figure 15BAs shown, substrate W2 is bent so that its center portion protrudes toward substrate W1. Thus, after the electrostatic suction holders 1413 and 1413 are released, the residual electrostatic force remaining between electrode terminals 1413b and 1423b causes substrates W1 and W2 to adhere to stage 141 and head 142, thereby releasing the force exerted by the gas ejected from grooves 1413d and 1423d. Then, in this state, substrates W1 and W2 are brought into contact with each other by applying pressure above the critical pressure to the center portions of substrates W1 and W2. Since substrates W1 and W2 can be bonded from their center portions toward their peripheries without the influence of the adhesion force on stage 141 and head 142, substrates W1 and W2 can be bonded with high positional accuracy across their entire surfaces without distortion. Furthermore, before the substrates W1 and W2 are released from the contact force against the stage 141 and the head 142, if the pressing portions 1441a and 1432a press the center portions of the substrates W1 and W2, the contact force against the stage 141 and the head 142 increases the distortion of the substrates W1 and W2. Furthermore, based on information indicating the protrusion offset stored in the memory, the control unit 9 causes the pressing portions 1441a and 1432a to protrude from the stage 141 and the head 142, such that the protrusion of either pressing portion 1441a or 1432a relative to the other is only as much as the protrusion offset. This reduces the amount of warpage of the substrates W1 and W2 when they are bonded together.

[0126] Then, if Figure 14 As shown, the substrate bonding apparatus 1 performs a second contact step (step S7) of extending the contact portion of the substrates W1 and W2 from the central portion W1c and W2c of the substrates W1 and W2 to the peripheral portion W1s and W2s. Figure 16A As shown by the arrow AR12, the pressing portion 1441a is moved in a direction of being immersed in the carrier 141, and the pressing portion 1442a is moved in a direction of being immersed in the head portion 142. At the same time, the substrate bonding device 1 moves the head portion 142 in a direction close to the carrier 141 as shown by the arrow AR13. Thus, as shown by the arrow AR14, the contact portion of the substrates W1 and W2 is expanded from the central portion to the peripheral portion of the substrates W1 and W2 by the pressing mechanism with the central portion being point-pressed as the starting point, through the intermolecular force (van der Waals force) generated between the substrates W1 and W2 or the bonding force of water or OH groups present on the bonding surfaces of the substrates W1 and W2. Then, when the substrate bonding device 1 approaches the head portion 142 to a position separated from the carrier 141 by a preset distance, as shown Figure 16BAs shown, the electrostatic suction seats 1421 and 1422 release their grip on the substrates W1 and W2. At this time, the substrate bonding apparatus 1 first fills the entire groove provided in the sub-annular region A12 with gas from the gas outlet holes provided in the first region A1 with gas, and then releases the electrostatic suction seats 1421 and 1422 from holding the substrates W1 and W2. At this time, the control unit 9 controls the flow rate of gas discharged from the gas outlet holes 1412c and 1422c based on the gas pressure detected by the aforementioned gas pressure detection unit so that the gas pressure is less than the critical pressure. Next, the substrate bonding apparatus 1 fills the entire grooves 1411d and 1412d provided in the sub-annular region A11 with gas from the gas outlet holes 1411c and 1412 provided in the first region A1 with gas, and then releases the electrostatic suction seats 1411, 1412, 1421, and 1422 from holding the substrates W1 and W2. As a result, the electrostatic suction cups 1421 and 1422 release their grip on substrates W1 and W2. The contact area between substrates W1 and W2 then expands from their center to their periphery. Here, with their bonding surfaces in contact, substrates W1 and W2 are temporarily bonded together through hydrogen bonds between OH groups or water molecules.

[0127] Afterwards, if Figure 14 As shown, the substrate bonding apparatus 1 measures the positional deviation of substrate W2 relative to substrate W1 while the bonding surface of substrate W1 contacts the bonding surface of substrate W2 (step S8). At this point, the substrate bonding apparatus 1 measures the positional deviation of substrates W1 and W2 while restricting the movement of substrate W2 relative to substrate W1 by expanding the contact area between substrates W1 and W2. Next, the substrate bonding apparatus 1 determines whether all calculated positional deviations dx, dy, and dθ are below preset positional deviation thresholds dxth, dyth, and dθth (step S9).

[0128] The substrate bonding apparatus 1 determines that any of the calculated position deviations dx, dy, and dθ is greater than the preset position deviation thresholds dxth, dyth, and dθth (step S9: No). In this case, the substrate bonding apparatus 1 separates the substrate W2 from the substrate W1 by raising the head 142 (step S10). At this time, the substrate bonding apparatus 1 raises the head 142 to increase the distance between the substrates W1 and W2, moves the pressing portion 1441a toward the direction of being immersed in the stage 141, and moves the pressing portion 1442a toward the direction of being buried in the head 142. Here, the substrate bonding apparatus 1 controls the raising of the head 142 so that the pulling pressure on the substrate W2 during the separation of the substrate W2 from the substrate W1 is constant. As a result, the substrate W2 separates from the substrate W1, and the contact between the substrates W1 and W2 is released.

[0129] Next, the substrate bonding apparatus 1 calculates the corrective movement amounts for substrates W1 and W2 required to bring all calculated positional deviations dx, dy, and dθ below positional deviation thresholds dxth, dyth, and dθth (step S11). The control unit 9 calculates the corrective movement amount so that the movement is equal to the difference between the positional deviations dx, dy, and dθ between substrates W1 and W2 when substrate W2 is in contact with substrate W1 and the positional deviation between substrate W1 and W2 when substrate W2 is not in contact with substrate W1. The control unit 9 then adds only the offsets in the XY and rotational directions, represented by the horizontal offset vectors stored in the memory, to the corrective movement amount. Alignment is performed by offsetting only these corrective movement amounts. When substrates W1 and W2 come into contact again, any positional deviation caused by contact between substrates W1 and W2 is eliminated.

[0130] Next, the substrate bonding apparatus 1 performs alignment with the two substrates W1 and W2 in a non-contact state to correct the relative positional deviations dx, dy, and dθ between the two substrates W1 and W2 (step S12). Here, the substrate bonding apparatus 1 moves the stage 141 in the X and Y directions, as well as the rotational direction about the Z axis, by the corrective movement amounts calculated in step S111. In this way, the substrate bonding apparatus 1 adjusts the relative position of substrate W2 relative to substrate W1 so that the positional deviations dx, dy, and dθ are minimized when substrates W1 and W2 are separated from each other. The substrate bonding apparatus 1 then repeats step S9.

[0131] On the other hand, the substrate bonding apparatus 1 determines that all the calculated position deviations dx, dy, and dθ are below the preset position deviation thresholds dxth, dyth, and dθth (step S9: Yes). In this case, the substrate bonding apparatus 1 further expands the contact portion of the substrates W1 and W2 from the center portion to the periphery of the substrates W1 and W2 so that the substrates W1 and W2 are in contact with each other over their entire surfaces (step S13). Figure 17A As shown, the substrate bonding apparatus 1 moves the pressing portion 1441a of the pressing mechanism 1441 toward the direction of being sunken into the stage 141, and moves the pressing portion 1442a of the pressing mechanism 1442 toward the direction of being sunken into the head portion 142. Simultaneously, as indicated by arrow AR16, the head portion 142 is further moved toward the stage 141 to shorten the distance between the peripheral portions of the substrates W1 and W2. In this manner, the substrate bonding apparatus 1 brings the peripheral portion of the substrate W1 into contact with the peripheral portion of the substrate W2, bringing the bonding surfaces of the substrates W1 and W2 into full-surface contact.

[0132] Return to Figure 14After that, the substrate bonding device 1 presses the substrate W1 against the substrate W2 to press the substrates W1 and W2 together and then heats them, thereby performing a formal bonding step (step S14) to bond the substrates W1 and W2 together. Next, the electrostatic suction seat 1421 of the head 142 is stopped by the substrate bonding device 1, and the holding of the substrate W2 is released (step S15). Next, as Figure 17B As shown by the arrow AR17, the substrate bonding device 1 separates the head 142 from the substrate W2 by raising the head 142. Next, the substrate bonding device 1 measures the position deviation of the substrate W2 relative to the substrate W1 again in a state where the substrates W1 and W2 are bonded to each other (step S16). Next, based on the calculated position deviation, the control unit 9 calculates the horizontal offset vector of the substrate W2 used relative to the substrate W1 and the protrusion offset of the protrusion of the pressing parts 1441a and 1432a of the pressing mechanisms 1441 and 1432 when calculating the correction amount of movement in the next bonding of the substrates W1 and W2 (step S17). Here, the control unit 9 causes the memory to store information representing the calculated horizontal offset vector and the protrusion offset.

[0133] Return to Figure 12 Next, the transport device 84 transports the bonded substrates W1 and W2 from the substrate bonding apparatus 1 to the load lock 83 (step S113). Next, the transport device 82 removes the bonded substrates W1 and W2 from the load lock 83 and transports them to the inspection device 7 (step S114). Thereafter, the inspection device 7 photographs all alignment marks including the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c provided on the bonded substrates W1 and W2 (step S115). Here, the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c are used for alignment in the substrate bonding apparatus 1. The inspection device 7 photographs not only these alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c, but also all other alignment marks. The other alignment marks on either substrate W1 or W2 correspond to the third alignment mark, and the other alignment marks on the other substrate correspond to the fourth alignment mark. Here, the inspection device 7 detects all alignment marks, including alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c, provided on the bonded substrates W1 and W2, by sequentially capturing images with the imaging unit 73. Next, the control unit 9 calculates the amount of positional deviation and the direction of positional deviation of each alignment mark from the images captured by the imaging unit 73 of the inspection device 7 (step S116).

[0134] Next, based on the calculated position deviation amount, the control unit 9 calculates the horizontal offset vector of the substrate W2 used relative to the substrate W1 and the protrusion offset amount of the pressing parts 1441a and 1432a of the pressing mechanisms 1441 and 1432 when calculating the correction amount movement amount in the next bonding of the substrates W1 and W2 (step S117). Specifically, the control unit 9 separates the position deviation vector of each alignment mark specified by the calculated position deviation amount and position deviation direction into an XY direction component, a rotation direction component, a warping component, and a twisting component. Here, the control unit 9, for example, Figure 18 The distribution of the position deviation vector is shown in (A), as shown in Figure 18 (B) to Figure 18 As shown in (E), the position deviation vector is separated into the XY direction component, the rotation direction component, the warping component, and the twisting component. Figure 18 (B) to Figure 18 (E) combines the XY direction components, the rotational direction components, the warp component, and the twist component to form a relationship consistent with the positional deviation vector. The control unit 9 then calculates a horizontal offset vector, which is a vector reflecting the axial offset of the substrate W2 relative to the substrate W1 along the two intersecting axes, that is, the offset in the XY direction, and the rotational offset, which is the offset in the rotational direction, based only on the separated XY direction components and the rotational direction components.

[0135] Incidentally, the calculated offset is converted into a horizontal offset vector, which is a vector reflecting the respective axial directions of the positions of the alignment marks MK1a, Mk1b, MK2a, MK2b, MK3a, and MK3b used in the bonding device 1, along the two intersecting axes of the substrate W2 relative to the substrate W1, that is, the axial deviation as the offset in the XY direction and the rotational offset as the offset in the rotational direction. In the bonding device 1, alignment is performed using this converted horizontal offset vector, which is better from the perspective of improving alignment accuracy because the horizontal offset of the alignment marks MK1a, Mk1b, MK2a, MK2b, MK3a, and MK3b actually used can be better reflected. First, Figure 19A The representative positions CE1a and CE2a of the alignment marks MK1a and MK2a are set to correspond to the positions shown in FIG. Figure 19B The two alignment marks MK1a and MK1b are configured in a manner such that their respective centers are aligned. Figure 19C As shown, the representative position CE2a of the alignment mark MK2a is moved only by an amount reflecting the direction and size indicated by the aforementioned horizontal offset vector VEoffa. Figure 19DAs shown, the alignment marks MK1a and MK2a are aligned with the horizontal offset vector VEoffa being the only deviation. Figure 19E As shown, the X and Y offsets of substrate W2 relative to substrate W1 are Δxoff and Δyoff, respectively, and the rotational offset is Δθoff. In this case, the horizontal offset vector VEoffa corresponding to the group of alignment marks MK1a and MK2a imaged by imaging unit 501A is represented by a vector starting at the representative position CE1a of alignment mark MK1a and ending at the representative position CE2a of alignment mark MK2a. The horizontal offset vector VEoffb corresponding to the group of alignment marks MK1b and MK2b imaged by imaging unit 501B is represented by a vector starting at the representative position CE1b of alignment mark MK1b and ending at the representative position CE2b of alignment mark MK2b. Furthermore, the horizontal offset vector VEoffc corresponding to the group of alignment marks MK1c and MK2c imaged by imaging unit 501C is represented by a vector starting at the representative position CE1c of alignment mark MK1c and ending at the representative position CE2c of alignment mark MK2c. Here, the horizontal offset vectors VEoffa, VEoffb, and VEoffc are represented as vectors with different orientations and magnitudes. The control unit 9 calculates the horizontal offset vectors VEoffa, VEoffb, and VEoffc. Then, the control unit 9 aligns the substrates W1 and W2 using the representative positions CE2a, CE2b, and CE2c of the alignment marks MK1b, MK2b, and MK2c offset by the horizontal offset vectors VEoffa, VEoffb, and VEoffc.

[0136] Furthermore, the control unit 9 calculates the protrusion offset of the pressing portions 1441a and 1432a of the pressing mechanisms 1441 and 1432 based on the warping component. Here, each time the control unit 9 manufactures a plurality of preset mutually bonded substrates W1 and W2, it calculates the horizontal offset vector and the protrusion offset based on the position deviation amount and the average value or median value of the position deviation direction obtained for these plurality of mutually bonded substrates W1 and W2. Then, the control unit 9 causes the memory to store information representing the calculated horizontal offset vector and the protrusion offset. Thus, the substrate bonding device 1 corrects the calculated horizontal offset vector and the protrusion offset when bonding the substrates W1 and W2. Thereafter, the conveying device 82 conveys the measured mutually bonded substrates W1 and W2 from the inspection device 7 to the removal port 813 (step S118). In addition, in this substrate bonding method, at least part of the series of processes of steps S101 to S104, the series of processes of steps S105 to S107, the series of processes of steps S108 to S113, and the series of processes of steps S115 to S117 can be performed in parallel on different substrates W1 and W2.

[0137] As described above, according to the substrate bonding apparatus 1 of this embodiment, while the central portion W1c of the substrate W1 is in contact with the central portion W2c of the substrate W2 and the peripheral portion W1s of the substrate W1 is held by the electrostatic suction holders 1411 and 1412, gas is discharged from the gas discharge holes 1413c and the grooves 1413d between the stage 141 and the substrate W1, thereby bringing the substrates W1 and W2 into contact with each other. As a result, the pressure of the gas discharged from the gas discharge holes 1413c and 1423c and the grooves 1413d and 1423d effectively acts against the force that would otherwise have pressed the substrates W1 and W2 against the stage 141 and the head 142 after the electrostatic suction holders 1413 and 1423 were released, releasing the pressure of the gas discharged from the gas discharge holes 1413c and 1423c and the grooves 1413d and 1423d. Then, in this state, the substrates W1 and W2 are brought into contact with each other by applying pressure to the central parts of the substrates W1 and W2 at a pressure higher than the critical pressure. Since the substrates W1 and W2 can be joined from the central parts to the peripheral parts without being affected by the adhesion force of the substrates W1 and W2 to the carrier 141 and the head 142, the substrates W1 and W2 can be joined with high positional accuracy over the entire surface without distortion.

[0138] Incidentally, if the stage 141 and the head 142 do not have the grooves 1413d and 1423d, only a portion of the substrates W1 and W2 will be separated from the stage 141 and the head 142, and the portion of the substrates W1 and W2 that was in close contact with the stage 141 and the head 142 may remain. In this case, the entire substrate W1 and W2, excluding the peripheral portion, may not be released from the force of the close contact with the stage 141 and the head 142. In particular, as described above, when gas is ejected from the gas outlet holes 1413c and 1423c before the electrostatic suction holders 1413 and 1423 are released from their hold, the residual electrostatic force of the electrostatic suction holders 1413 and 1423 is relatively small, and only the vicinity of the gas outlet holes 1413c and 1423c is in a state of being peeled off from the carrier 141 and the head 142. The gas pressure cannot be effectively applied to the entire portion other than the periphery of the substrates W1 and W2, and it may be impossible to release the entire portion other than the periphery of the substrates W1 and W2 from the carrier 141 and the head 142. In contrast, according to the present embodiment, the carrier 141 and the head 142 are provided with grooves 1413d and 1423d. Since the entirety of the substrates W1 and W2 except for the peripheral portion can be in a released state relative to the force that is tightly attached to the carrier 141 and the head 142, the substrates W1 and W2 can be joined from the center portion to the peripheral portion without being affected by the force that is tightly attached to the carrier 141 and the head 142.

[0139] Furthermore, according to this embodiment, the grooves 1413d and 1423d formed in the second area A2 of the stage 141 and the head 142 have portions extending along the respective extension directions of the plurality of electrode terminals 1413b and 1423b. Furthermore, the grooves 1413d and 1423d are provided between the plurality of electrode terminals 1413b electrically connected to the terminal electrode 1413a of the stage 141 and the head 142, and the plurality of electrode terminals 1423b electrically connected to the terminal electrode 1423a. Thus, the gas ejected from the gas ejection holes 1413c and 1423c through the grooves 1413d and 1423d can uniformly apply force to the entirety of the substrates W1 and W2 in the direction of peeling the substrates W1 and W2 from the stage 141 and the head 142, in response to the force applied to the substrates W1 and W2 by the electrostatic suction holders 1413 and 1423. Furthermore, since the grooves 1413d and 1423d are provided between the electrode terminals 1413b and 1423b to which voltages of different polarities are applied, the pressure of the gas discharged from the grooves 1413d and 1423d can effectively counteract the electrostatic force generated between the electrode terminals 1413b and 1423b, which presses the substrates W1 and W2 against the stage 141 and the head 142. Therefore, the speed at which the contact portion between the substrates W1 and W2 expands can be made uniform.

[0140] Furthermore, according to this embodiment, the stage 141 and the head 142 have grooves 1411d and 1421d in the sub-annular region A11 of the first area A1, which communicate with the gas ejection holes 1411c and 1411d. Furthermore, the stage 141 and the head 142 also have grooves in the sub-annular region A12 of the first area A1, which communicate with the gas ejection holes. Then, when the central parts of the bonding surfaces of the substrates W1 and W2 are brought into contact with each other and the substrates W1 and W2 are brought into contact with their entire surfaces after the peripheral parts of the substrates W1 and W2 are held by the electrostatic suction seats 1411, 1412, 1421, and 1422, the control unit 9 first controls the suction seat driving unit 1491 and the gas supply unit 1492 to fill the gas from the gas outlet hole of the sub-annular area A12 set in the first area A1 into the entire groove set in the sub-annular area A12, and then releases the electrostatic suction seats 1421 and 1422 from holding the substrates W1 and W2. Next, the control unit 9 controls the holder driving unit 1491 and the gas supply unit 1492 to fill the entire grooves 1411d and 1412d provided in the sub-annular area A11 of the first area A1 with gas from the gas outlet holes 1411c and 1412c provided in the sub-annular area A11. After that, the electrostatic holders 1411, 1412, 1421, and 1422 release the substrates W1 and W2 from their grip. As a result, while the substrates W1 and W2 are being pulled away from the stage 141 and the head 142 through the entire grooves 1411d and 1412d, the electrostatic holders 1411, 1412, 1421, and 1422 release their grip on the circumferences of the substrates W1 and W2. Therefore, by applying force in the direction of peeling off from the carrier 141 and the head 142 to the entire substrate W1 and W2, it is possible to prevent a part of the substrate W1 and W2 from being preferentially peeled off from the carrier 141 and the head 142, and the speed at which the contact parts of the substrates W1 and W2 expand with each other can be made uniform.

[0141] Furthermore, while voltage is applied across the multiple electrode terminals 1411b, 1421b, 1412b, and 1422b of the electrostatic holders 1411, 1421, 1412, and 1422, gas is filled throughout the grooves of the sub-annular region A12 of the first area A1 and throughout the grooves 1411d and 1412d of the sub-annular region A11 of the first area A1. This allows a portion of the gas filling the grooves 1411d and 1412d to be ionized. Consequently, the ions contained in the gas neutralize the residual electrostatic forces of the electrostatic holders 1411, 1421, 1412, and 1422, making it easier to peel the substrates W1 and W2 from the stage 141 and the head 142.

[0142] By the way, for example, Figure 20AAs shown, the stage and the head include electrostatic suction seats 9411 and 9421 having straight terminal electrodes 9411a and 9421a without a bent portion and electrode terminals 9411b and 9421b. Figure 20A As shown, the alignment marks MK1a' and MK2a' for calculating the position deviation of the substrates W1 and W2 are overlapped with the electrode terminals 9411b and 9421b of the electrostatic suction bases 9411 and 9421. Figure 20B As shown, the substrate bonding apparatus 1 receives the substrates W1 and W2 by rotating the stage 141, so that the alignment marks MK1a' and MK2a' do not overlap with the electrode terminals 9411b and 9421b of the electrostatic suction bases 9411 and 9421. Figure 20A As shown, for example, when the alignment marks MK1a and MK2a for calculating the position deviation of the substrates W1 and W2 are overlapped with the terminal electrodes 9411a and 9421a of the electrostatic suction seats 9411 and 9421, the substrate bonding apparatus 1 moves the stage 141 to the position of the substrate 141. Figure 20A After the rotation direction indicated by the arrow AR10 is rotated, even if the substrates W1 and W2 are received, Figure 20B As shown, the alignment marks MK1a and MK2a overlap with the electrode terminals 9411a and 9421a of the electrostatic holders 1411 and 1421. The stage and head are then moved parallel to each other so that the alignment marks MK1a and MK2a, used to calculate the positional deviation of substrates W1 and W2, do not overlap with the electrostatic holders 1411 and 1421. This causes the pressing mechanism to shift the position at which substrates W1 and W2 are pressed from their centers. As a result, the bonded substrates W1 and W2 are more likely to be distorted.

[0143] In contrast, in the electrostatic suction holders 1411 and 1421 according to this embodiment, the terminal electrode 1411a has multiple curved portions 1411ab that are curved so as to protrude away from each other when viewed from above, and a connecting portion 1411aa that connects the ends of two circumferentially adjacent curved portions 1411ab. Thus, the substrate bonding apparatus 1 rotates the stage 141 and receives the substrates W1 and W2 without parallel movement of the stage 141 or the head 142. This allows the alignment marks MK1a and MK2a used to calculate the positional deviation of the substrates W1 and W2 to not overlap with the electrostatic suction holders 1411 and 1421. Consequently, the substrates W1 and W2 can be bonded with high positional accuracy, and distortion of the bonded substrates W1 and W2 can be reduced.

[0144] Furthermore, the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c of substrates W1 and W2 are typically located at the corners of the wafer base regions of substrates W1 and W2, that is, at the periphery of the wafer base regions. Since the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c must be positioned so as not to overlap with the dicing lines between the base regions of adjacent wafers, they must be positioned inward of the wafer base regions, increasing the area of ​​the wafer base regions accordingly. Consequently, the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c are positioned more centrally than the periphery of substrates W1 and W2, corresponding to the increased area of ​​the wafer base regions. On the other hand, when substrates W1 and W2 are positioned at the substrate holding positions of stage 141 and head 142, alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c must each be positioned facing first area A1. Therefore, when alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c are positioned closer to the center than the periphery of substrates W1 and W2, the width of first area A1 must be set correspondingly wider. Here, when an electrostatic suction holder is positioned in first area A1, when the central portions of substrates W1 and W2 come into contact with each other, the bonding between substrates W1 and W2 stops at the portion facing first area A1, and the bonding between substrates W1 and W2 does not fully extend to the periphery. Furthermore, there is a risk that the periphery of substrates W1 and W2 may become distorted. In contrast, the stage 141 and head 142 of this embodiment have two pre-set sub-annular areas A11 and A12 in the first area A1, and electrostatic suction seats 1411, 1412, 1421, and 1422 are provided in the sub-annular areas A11 and A12, respectively. Thus, even when the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c of the substrates W1 and W2 are positioned closer to the center than the periphery of the substrates W1 and W2, these marks can be imaged. Furthermore, when the substrates W1 and W2 are brought into contact with their centers for bonding, the bonding can be performed up to near the periphery of the substrates W1 and W2 by releasing the hold only via the electrostatic suction seats 1412 and 1422 provided in the sub-annular area A12. Furthermore, the electrostatic suction holders 1412 and 1422 disposed in the secondary annular area A12 can be driven simultaneously with the electrostatic suction holders 1413 and 1423 disposed in the second area A2. In this case, since the electrostatic suction holders 1412 and 1422 and the electrostatic suction holders 1413 and 1423 can share a power supply, the structure of the substrate bonding apparatus 1 can be simplified.

[0145] In addition, the substrate bonding system according to this embodiment includes an inspection device 7 having an imaging unit 73 for capturing images of the multiple alignment marks of each of the substrates W1 and W2 being bonded to each other. Furthermore, the control unit 9 calculates the positional deviation and positional deviation direction of each of the multiple alignment marks of the substrates W1 and W2 based on the captured images obtained by the imaging unit 73 capturing the multiple alignment marks of the substrates W1 and W2. The control unit 9 then separates the axial components (i.e., XY direction components) and the rotational components of the positional deviation vector determined by the calculated positional deviation and positional deviation direction, respectively, along the two intersecting axes. Based on the separated XY direction components and rotational direction components, the control unit 9 calculates a horizontal offset vector as a vector reflecting the axial offset and the rotational offset. The axial offset is the offset of substrate W2 relative to substrate W1 along the two intersecting axes (i.e., XY directions) when bonding substrates W1 and W2, and the rotational offset is the offset in the rotational direction. Furthermore, the control unit 9 separates the warp component of the positional deviation vector determined by the calculated positional deviation amount and positional deviation direction. Based on the separated warp component, it calculates a protrusion offset. The protrusion offset is the offset of the center portion of substrate W1 relative to the periphery of substrate W1 toward substrate W2 when substrates W1 and W2 are bonded. Thus, for example, when substrates W1 and W2 are repeatedly bonded, the relative position of substrates W1 and W2 is corrected by only the absolute value of the horizontal offset vector, calculated based on the positional deviation amount of alignment marks after the previous substrate bonding step, in the offset direction indicated by the horizontal offset vector. This improves the positional accuracy of the bonding between substrates W1 and W2. Here, if the pressing mechanism on the head 142 side is position-controlled and the pressing mechanism on the stage 141 side is pressure-controlled, increasing the protrusion offset on the head 142 side causes the peripheries of the bonded substrates W1 and W2 to warp toward the head 142 relative to their centers. If the amount of protrusion offset on one head portion 142 side is reduced, the peripheral portions of the substrates W1 and W2 bonded to each other are warped toward the stage 141 side relative to the central portions.

[0146] Incidentally, if the offset direction and amount are determined solely based on the image captured by the imaging unit 73 of the inspection device 7 without considering the positional deviation errors of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c, the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c will deviate in accordance with the positional deviation errors in the substrate bonding apparatus 1. In contrast, in this embodiment, the horizontal offset vector is calculated by correcting the offset direction and amount based on the positional deviation errors of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c before and after bonding of the substrates W1 and W2 in the substrate bonding apparatus. This improves the accuracy of the horizontal offset vector required for bonding the substrates W1 and W2.

[0147] (Second embodiment)

[0148] The substrate bonding apparatus according to this embodiment differs from the first embodiment in that it includes a plurality of pressing members, each of which has a circular shape having different inner diameters. The plurality of pressing members are concentrically arranged in a second region inside the first region of the first substrate holding portion, with their centers aligned with the central portion of the first substrate holding portion, and press the portion of the first substrate facing the second region when the first substrate is positioned in the substrate holding position. In the substrate bonding apparatus according to this embodiment, when the central portions of the first substrate and the central portions of the second substrate are in contact and the periphery of the first substrate is held by the substrate holding portion, the pressing members located toward the central portion of the first substrate holding portion of the plurality of pressing members preferentially press the first substrate, bringing the first substrate into contact with the second substrate.

[0149] The substrate bonding apparatus according to this embodiment has substantially the same configuration as the substrate bonding apparatus 1 constituting the substrate bonding system described in the first embodiment. Figure 21A as well as Figure 21B As shown, only the structure of the carrier 2141 and the head 2142 is different from the first embodiment. Figure 21A as well as Figure 21B In the embodiment, the same configuration as that of the first embodiment is denoted by Figure 5A as well as Figure 5B The same reference numerals are used. Similar to the substrate bonding apparatus 1 described in the first embodiment, the substrate bonding apparatus according to this embodiment includes a chamber 120, a stage 2141, a head 2142, a stage drive unit 143, a head drive unit 144, substrate heating units 1481 and 1482, a position measuring unit 500, and a distance measuring unit 1493. In the following description, components identical to those in the first embodiment are described using the same reference numerals as those used in the first embodiment.

[0150] The carrier 2141 and the head 2142 are arranged in the chamber 120 to face each other in the vertical direction. The carrier 2141 is a first substrate holding portion that holds the substrate W1 on its upper surface, and the head 2142 is a second substrate holding portion that holds the substrate W2 on its lower surface. Here, the carrier 2141 supports the substrate W1 in a state where its upper surface is in contact with the entire surface of the substrate W1, and the head 2142 supports the substrate W2 in a state where its lower surface is in contact with the entire surface of the substrate W2. The carrier 2141 and the head 2142 are formed of a translucent material such as translucent glass. Figure 21A As shown, the stage 2141 is provided with an electrostatic suction seat 1411 for holding the substrate W1, a pressing mechanism 1441 for pressing the central portion of the substrate W1, and a plurality of ( Figure 21A 32 in the figure) circular pressing members 21511, 21512, 21513, 21514 when viewed from above. Figure 21B As shown, the carrier 2141 is provided with piezoelectric actuators 21611, 21612, 21613, and 21614. Figure 21A As shown, the head 2142 is provided with an electrostatic suction seat 1421 for holding the substrate W2, a pressing mechanism 1442 for pressing the central portion of the substrate W2, and a plurality of ( Figure 21A 32 in the figure) circular pressing members 21521, 21522, 21523, 21524 when viewed from above. Figure 21B As shown, the head 2142 is equipped with piezoelectric actuators 21621, 21622, 21623, and 21624. When substrates W1 and W2 are held by the stage 2141 and the head 2142, the electrostatic holders 1411 and 1421 are provided with an annular first area A1. This first area A1 faces the periphery of the substrates W1 and W2 on the stage 141 and the head 142. The electrostatic holders 1411 and 1421 then respectively hold the periphery of the substrates W1 and W2. Furthermore, circular through-holes 141b and 142b are provided in the center of the stage 141 and the head 142, respectively, when viewed from above.

[0151] In the second area A2 of the stage 2141, pressing members 21511, 21512, 21513, and 21514 are arranged along four virtual circles VC1, VC2, VC3, and VC4, respectively, with the centers of the four virtual circles VC1, VC2, VC3, and VC4 coinciding with the center of the stage 2141. The pressing members 21511, 21512, 21513, and 21514 then press the portion of the substrate W1 facing the second area A2 when the substrate W1 is positioned at a predetermined substrate holding position on the stage 2141. Furthermore, the piezoelectric actuators 21611, 21612, 21613, and 21614 serve as pressing member driving units that drive the pressing members 21511, 21512, 21513, and 21514, respectively, toward either a direction protruding from or a direction retracting into the stage 2141. In the second area A2 of the head 2142, the pressing members 21521, 21522, 21523, and 21524 are also arranged along four virtual circles VC1, VC2, VC3, and VC4, respectively. The centers of the four virtual circles VC1, VC2, VC3, and VC4 coincide with the center of the head 2142. The pressing members 21521, 21522, 21523, and 21524 then press the portion of the substrate W2 facing the second area A2 when the substrate W2 is positioned at a predetermined substrate holding position of the head 2142. Furthermore, the piezoelectric actuators 21621, 21622, 21623, and 21624 serve as pressing member driving units that drive the pressing members 21521, 21522, 21523, and 21524, respectively, toward either a direction protruding from or a direction retracting into the head 2142.

[0152] The control unit 9 controls the amount of movement of each of the pressing members 21511, 21512, 21513, and 21514 by controlling the amount of change in the length of the piezoelectric actuators 21611, 21612, 21613, and 21614 in the facing direction between the stage 2141 and the head 2142. The control unit 9 then controls the piezoelectric actuators 21611, 21612, 21613, and 21614 so that the speed at which the plurality of pressing members 21511, 21512, 21513, and 21514 sequentially contact the substrate W1 from near the center of the stage 2141 is faster than the speed at which the substrates W1 and W2 are temporarily bonded together by moving from the center of the bonding surfaces of the substrates W1 and W2 to the periphery of the substrates W1 and W2. Furthermore, the control unit 9 controls the amount of movement of each of the pressing members 21521, 21522, 21523, and 21524 by controlling the amount of change in the length of the piezoelectric actuators 21621, 21622, 21623, and 21624 in the facing direction between the stage 2141 and the head 2142. The control unit 9 then controls the piezoelectric actuators 21611, 21612, 21613, and 21614 so that the plurality of pressing members 21521, 21522, 21523, and 21524 sequentially contact the substrate W2 from near the center of the head 2142 faster than the speed at which the substrates W1 and W2 are temporarily bonded together by moving from the center of the bonding surfaces of the substrates W1 and W2 to the periphery of the substrates W1 and W2.

[0153] In the substrate bonding system according to this embodiment, the process of a series of actions from the input of substrates W1 and W2 to the bonding of substrates W1 and W2 and the removal of substrates W1 and W2 from the substrate bonding system is substantially the same as that of the first embodiment. Only a part of the actions of the substrate bonding step is different from those of the first embodiment. Therefore, the reference Figure 14 、 Figures 22A to 23B A description will be given of a substrate bonding step performed by the substrate bonding system according to this embodiment.

[0154] First, if Figure 14 As shown, the substrate bonding device performs a series of actions from step S1 to S4. Then, the substrate bonding device further brings the substrates W1 and W2 closer to each other by bringing the head 142 closer to the stage 141 (step S5). Then, the substrate bonding device performs a first contact step (step S6) by bending the substrates W1 and W2 while the substrates W1 and W2 are separated from each other. At this time, for example, Figure 22AAs shown, the substrate bonding device, while keeping the periphery of the substrate W1 on the electrostatic suction seat 1411, presses the central portion of the substrate W1 toward the substrate W2 via the pressing portion 1441a, and bends the substrate W1 in such a manner that the central portion W1c of the substrate W1 protrudes toward the substrate W2. Furthermore, the substrate bonding device, while keeping the periphery of the substrate W2 on the electrostatic suction seat 1422, presses the central portion of the substrate W2 toward the substrate W1 via the pressing portion 1442a, and bends the substrate W2 in such a manner that the central portion of the substrate W2 protrudes toward the substrate W1. Then, as Figure 22B As shown, the substrate bonding apparatus causes the pressing members 21511, 21512, 21513, 21514 to contact the substrate W1 via the piezoelectric actuators 21611, 21612, 21613, 21614. Furthermore, the substrate bonding apparatus causes the pressing members 21521, 21522, 21523, 21524 to contact the substrate W2 via the piezoelectric actuators 21621, 21622, 21623, 21624.

[0155] Then, if Figure 14 As shown, the substrate bonding apparatus performs a second contact step (step S7) of expanding the contact portion of the substrates W1 and W2 from the central portion W1c and W2c of the substrates W1 and W2 to the peripheral portion W1s and W2s. Figure 23A As indicated by arrow AR22 in the figure, the substrate bonding apparatus moves the pressing portion 1441a toward the carrier 2141 and the pressing portion 1442a toward the head portion 2142. Simultaneously, as indicated by arrow AR21, the substrate bonding apparatus moves the head portion 2142 toward the carrier 2141. The substrate bonding apparatus then preferentially presses substrate W1 from the pressing members 21511, 21512, 21513, and 21514 located toward the center of the carrier 2141. Furthermore, the substrate bonding apparatus preferentially presses substrate W2 from the pressing members 21521, 21522, 21523, and 21524 located toward the center of the head portion 2142. Consequently, as indicated by arrow AR23, the contact portion of substrates W1 and W2 expands from the center of substrates W1 and W2 toward the periphery, starting from the center where the pressing mechanisms 1441 and 1432 have applied point pressure.

[0156] After that, a series of processing from step S8 to step S12 is performed. Then, the substrate bonding device determines that all the calculated position deviations dx, dy, dθ are less than the preset position deviation thresholds dxth, dyth, dθth (step S9: yes). In this case, the substrate bonding device 1 expands the contact portion of the substrates W1 and W2 from the center to the periphery of the substrates W1 and W2 so that the substrates W1 and W2 are in contact with each other with their entire surfaces (step S13). Here, as Figure 23BAs shown, the substrate bonding apparatus 1 shortens the distance between the peripheral portions of the substrates W1 and W2 by moving the pressing portion 1441a of the pressing mechanism 1441 toward the carrier 2141 and the pressing portion 1442a of the pressing mechanism 1442 toward the head 2142. Simultaneously, as indicated by arrow AR24, the head 142 moves closer to the carrier 141. In this manner, the substrate bonding apparatus 1 brings the peripheral portion of the substrate W1 into contact with the peripheral portion of the substrate W2, bringing the bonding surfaces of the substrates W1 and W2 into full-surface contact.

[0157] Return to Figure 14 Next, the substrate bonding apparatus 1 performs a formal bonding step of bonding the substrates W1 and W2 to each other (step S14), and stops the electrostatic suction holder 1421 of the head 2142 to release the substrate W2 (step S15). Then, the substrate bonding apparatus 1 performs the processing from step S16 onwards.

[0158] As described above, according to the substrate bonding apparatus of this embodiment, the center portion of substrate W1 contacts the center portion of substrate W2. With the periphery of substrate W1 held by stage 2141, substrate W1 is preferentially pressed from the pressing members 21511, 21512, 21513, and 21514 at the center portion of stage 2141, bringing substrates W1 and W2 into contact. At this time, the substrate bonding apparatus preferentially presses substrate W2 from the pressing members 21521, 21522, 21523, and 21524 at the center portion of head 2142. As a result, after the electrostatic suction holders 1413 and 1423 are released, the residual electrostatic force remaining between the electrode terminals 1413b and 1423b causes the substrates W1 and W2 to adhere to the stage 141 and the head 142. By effectively applying the pressure of the gas discharged from the grooves 1413d and 1423d, the substrates W1 and W2 are released from the force of adhering to the stage 141 and the head 142. Then, in this state, the substrates W1 and W2 are brought into contact with each other by applying pressure at or above the critical pressure at their centers. Since the substrates W1 and W2 can be bonded from their centers toward their peripheries without being affected by the adhesion force of the stage 141 and the head 142, the substrates W1 and W2 can be bonded with high positional accuracy over their entire surfaces without distortion.

[0159] Although various embodiments of the present invention have been described above, the present invention is not limited to the configurations of the aforementioned embodiments. Figure 24AAs shown, the carrier 3141 and the head 3142 may each include grooves 3413d and 3423d having a plurality of arc-shaped auxiliary grooves 34131d and 34231d extending concentrically and having different diameters, and gas outlet holes 3413c and 3423c communicating with the grooves 3413d and 3423d. Figure 24A In the embodiment, the same configuration as that of the first embodiment is denoted by Figure 5A Here, as Figure 24B As shown, multiple auxiliary grooves 34131d and 34231d are connected to other auxiliary grooves 34131d and 34231d adjacent to the radial side of the carrier 4141 and the head 3142 at their two ends through auxiliary grooves 34132d and 34232d extending in the radial direction of the carrier 3141 and 4142.

[0160] Furthermore, the electrostatic suction holders 3413 and 3423 according to this variation each have a plurality of electrode terminals 3413b and 3423b extending in an arc shape centered on the center of the carrier 4141 and the head 4142, as well as a plurality of terminal electrodes 3413a and 3423a in the second region A2. The plurality of electrode terminals 3413b and 3423b are arranged in a concentric circle pattern centered on the center of the carrier 4141 and the head 4142, and are arranged alternately in the radial direction. The plurality of terminal electrodes 3413a each extend in the radial direction of the carrier 4141 and the head 4142, and one end of each of two adjacent electrode terminals 3413b is connected to each other in the radial direction of the carrier 4141 and the head 4142, with one electrode terminal 3423b sandwiched between them. In addition, the plurality of terminal electrode terminals 3423a also extend radially of the carrier 4141 and the head 4142, and one end of each of two adjacent electrode terminals 3423b is connected to each other by sandwiching one electrode terminal 3413b in the radial direction of the carrier 4141 and the head 4142.

[0161] Or, for example, Figure 25A As shown, the carrier 4141 and the head 4142 may each have a spiral groove 4413d, 4423d and a plurality of gas outlet holes 4413c, 4423c connected to the groove 4413d, 4423d. Figure 25A In the embodiment, the same configuration as that of the first embodiment is denoted by Figure 5A Same symbol.

[0162] like Figure 25BAs shown, electrostatic suction holders 4413 and 4423 according to this variation each have two electrode terminals 4413b and 4423b in the second area A2, extending spirally from the center of the stage 4141 and the head 4142. One of the two electrode terminals 4413b and 4423b is disposed on at least one side of the stage 4141 and the head 4142 in the radial direction of the other.

[0163] Again, for example, Figure 26A As shown, a plurality of radially extending elongated grooves 5413d and 5423d may be provided in the second area A2 inside the first area A1 of the carrier 5141 and the head 5142, and discharge holes 5413c and 5423c may be provided at the bottom of the end of each groove 5413d and 5423d, which are open at the center of the carrier 5141 and the head 5142. Figure 26B As shown in FIG. 1 , it is not necessary to provide a groove in the first area A1. Figure 26A as well as Figure 26B In the embodiment, the same configuration as that of the first embodiment is denoted by Figure 5A as well as Figure 7A The same symbols. In the carrier 5141 and the head 5142 of this modification, in the second area A2, the electrostatic suction seats 5413 and 5423 are arranged between two adjacent grooves 5413d and 5423d in the circumferential direction of the carrier 5141 and the head 5142. Here, the width Wi51 of the grooves 5413d and 5423d is set to about 0.2 mm, for example. Figure 27A As shown, the electrostatic suction bases 5413 and 5423 each have two arc-shaped terminal electrodes 5413a and 5423a extending in the circumferential direction of the carrier 5141 and the head 5142, and a plurality of slender electrode terminals 5413b and 5423b extending from the two terminal electrodes 5413a and 5423a to the other terminal electrodes 5423a and 5413a respectively along the radial direction of the carrier 5141 and the head 5142. Here, the electrode terminals 5413b and 5423b each have a wedge-shaped shape in a top view that widens toward the peripheral side of the carrier 5141 and the head 5142. Also, as shown in FIG. Figure 27B As shown, the width Wi53 between the surfaces of the stage 5141 and the head 5142 of the electrostatic suction base 5413 and 5423 is set to be shorter than the depth Wi52 of the groove 5413d and 5423d.

[0164] In the first embodiment, an example was described in which two annular sub-annular areas A11 and A12 were set in the first area A1 of the stage 141 and the head 142, and electrostatic suction holders 1411, 1421, 1412, and 1422 were provided in each of these sub-annular areas A11 and A12. However, the number of sub-annular areas provided in the first area A1 is not limited to two. For example, three or more annular sub-annular areas may be provided in the first area A1, and each sub-annular area may be provided with an electrostatic suction holder.

[0165] In the first embodiment, an example was described in which the substrate bonding apparatus 1 first fills the entire groove 1413d provided in the second area A2 of the stage 141 and the head 142 with gas from the gas discharge holes 1413c, and then releases the electrostatic suction holders 1413 and 1423 from holding the substrates W1 and W2. However, this is not limiting. For example, after releasing the electrostatic suction holders 1413 and 1423 from holding the substrates W1 and W2, the substrate bonding apparatus 1 may discharge gas from the gas discharge holes 1413c and 1423c provided in the second area A2 of the stage 141 and the head 142 into the grooves 1413d and 1423d provided in the second area A2. In this case, the control unit 9 may control the gas supply unit 1492 to discharge gas from the gas discharge holes 1413c and 1423c so that the pressure at which the substrates W1 and W2 contact each other is less than the critical pressure at which the substrates W1 and W2 are temporarily bonded. As a result, after the electrostatic suction holders 1413 and 1413 are released, the residual electrostatic force remaining between the electrode terminals 1413b and 1423b causes the substrates W1 and W2 to adhere to the stage 141 and the head 142. By effectively applying the pressure of the gas ejected from the gas ejection holes 1413c and 1423c through the grooves 1413d and 1423d, the substrates W1 and W2 are released from the force of adhering to the stage 141 and the head 142. Then, in this state, the substrates W1 and W2 are brought into contact with each other by applying pressure at a pressure exceeding the critical pressure at the center of the substrates W1 and W2. Since the substrates W1 and W2 can be bonded from the center toward the periphery without the influence of the adhesion force on the stage 141 and the head 142, the substrates W1 and W2 can be bonded with high positional accuracy over the entire surface without distortion.

[0166] In the first embodiment, the control unit 9 may calculate the horizontal offset vector without using the images of the alignment marks captured by the imaging unit 73 of the inspection device 7. In this case, the control unit 9 calculates the positional deviation amount and positional deviation direction of each of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c based on the images of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c captured by the imaging units 501A, 501B, and 501C after the substrates W1 and W2 are separated and alignment of the substrates W1 and W2 is completed, and the images of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c captured after the substrates W1 and W2 are joined together. Specifically, the control unit 9 calculates the positional deviation error based on the images of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c captured after the substrates W1 and W2 are separated and alignment of the substrates W1 and W2 is completed. The control unit 9 then calculates the positional deviation amount during bonding of the substrates W1 and W2 by subtracting the positional deviation error from the positional deviation amount calculated from the captured image of the alignment marks MK1a, MK1b, MK1c, MK2a, MK2b, and MK2c of the bonded substrates W1 and W2. Based on the calculated positional deviation amount and the positional deviation direction, the control unit 9 can calculate the horizontal offset vector of substrate W2 relative to substrate W1 during bonding of the substrates W1 and W2. Here, the horizontal offset amount is calculated for each pair of alignment marks MK1a, MK2a (MK1b, MK2b, MK1c, MK2c).

[0167] In the second embodiment, an example is described in which, in the second area A2 of the stage 2141, the plurality of pressing members 21511, 21512, 21513, and 21514 are arranged along four virtual circles whose centers coincide with the center of the stage 2141, and in the second area A2 of the head 2142, the plurality of pressing members 21521, 21522, 21523, and 21524 are arranged along four virtual circles whose centers coincide with the center of the head 2142. However, this is not limiting. For example, Figure 28 As shown, multiple (in Figure 28The pressing members 61511, 61512, 61513, and 61514 (four in total) are annular in shape with different inner diameters, and the multiple pressing members 61511, 61512, 61513, and 61514 provided on the head portion 6142 are also annular in shape with different inner diameters. Here, the four pressing members 61511, 61512, 61513, and 61514 are arranged concentrically in the second area A2 of the carrier 6141, with their centers aligned with the center of the carrier 6141. Furthermore, the four pressing members 61521, 61522, 61523, and 61524 are also arranged concentrically in the second area A2 of the head portion 6142, with their centers aligned with the center of the head portion 6142.

[0168] In the second embodiment, the example in which the piezoelectric actuators 21611, 21612, 21613, and 21614 drive the pressing members 21511, 21512, 21513, and 21514, respectively, and the piezoelectric actuators 21621, 21622, 21623, and 21624 drive the pressing members 21521, 21522, 21523, and 21524, respectively, has been described. However, the means for driving the pressing members 21511, 21512, 21513, 21514, 21521, 21522, 21523, and 21524 are not limited thereto. For example, Figure 29 The carrier 7141 shown in the figure may be composed of pistons driven by cylinders 71611, 71612, 71613, and 71614, respectively. Figure 29 The head 7142 shown, and the pressing members 71521, 71522, 71523, and 71524 may each be configured as a piston driven by air cylinders 71621, 71622, 71623, and 71624. Here, the air cylinders 71611, 71612, 71613, and 71614 use air pressure to move the pressing members 21511, 21512, 21513, and 21514, respectively, toward or away from the head 2142. Furthermore, the air cylinders 71621, 71622, 71623, and 71624 use air pressure to move the pressing members 21521, 21522, 21523, and 21524, respectively, toward or away from the stage 2141.

[0169] Furthermore, in this case, the control unit 9 can control the cylinders 71621, 71622, 71623, and 71624 to cause the pressing members 21511, 21512, 21513, and 21514 to press the substrate W1 so that the pressure at which the substrate W1 contacts the substrate W2 is less than the critical pressure at which the substrates W1 and W2 are temporarily bonded. In this case, the substrate bonding apparatus first presses the substrates W1 and W2 with the pressing members 21511, 21512, 21513, 21514, 21521, 21522, 21523, and 21524 so that the pressure at which the substrate W1 contacts the substrate W2 is less than the critical pressure at which the substrates W1 and W2 are temporarily bonded. Afterwards, the substrate bonding device can apply voltage from the suction seat driving part 1491 to the electrostatic suction seats 1411 and 1412 of the carrier 141 and the head 142, so as to keep the peripheral parts of the substrates W1 and W2 in the state of the electrostatic suction seats 1411 and 1412, and press the central parts of the substrates W1 and W2 through the pressing parts 1441a and 1432a.

[0170] In the first embodiment, the example in which the position measuring unit 500 includes three imaging units 501A, 501B, and 501C has been described, but the number of imaging units is not limited to three. Figure 30 The position measuring unit 8500 shown may include four imaging units 501A, 501B, 501C, and 501D, and a reflective member 6502 formed of four reflective surfaces 6502a, 6502b, 6502c, and 6502d corresponding to the four imaging units 501A, 501B, 501C, and 501D, respectively. The four imaging units 501A, 501B, 501C, and 501D are arranged around the reflective member 6502 so that the angles DAB, DBC, DCD, and DDA on the acute angle formed by two adjacent optical axes JLA and JLB (JLB, ​​JLC, JLC, JLD, and JLD, JLA) in the circumferential direction of the reflective member 6502 are equal.

[0171] In each embodiment, for example, a water vapor supply unit (not shown) may be included that supplies water vapor into the chamber 851 of the load lock unit 85 or the chamber 863 of the conveying device 86. The water vapor supply unit generates and supplies water vapor by mixing a carrier gas such as argon (Ar), nitrogen (N2), helium (He), or oxygen (O2) with evaporated water. The water vapor supply unit is connected to the chamber 851 of the load lock unit 85 through a supply valve and a supply pipe. The flow rate of the water vapor and the carrier gas introduced into the chamber 851 is adjusted by controlling the opening of the supply valve. In addition, the water vapor supply unit can be a structure that accelerates water (H2O) molecules, clusters, etc. and irradiates them onto the bonding surface of the substrates W1 and W2. Here, the water vapor supply unit can be composed of a particle beam source that radiates accelerated water (H2O) particles. In this case, the particle beam source can be a structure that generates water vapor using, for example, an ultrasonic generating element. Alternatively, a mixture of a carrier gas and water (H2O) generated by foam or ultrasonic vibration can be introduced into the aforementioned particle beam source to generate a water particle beam, which is then irradiated onto the bonding surface of the substrates W1 and W2. Figure 12 In step S104, after the substrates W1 and W2 are transferred to the chamber 851 of the load lock unit 85, the substrate bonding system does not open the chamber 851 to the atmosphere, but exposes the bonding surfaces of the substrates W1 and W2 to water vapor. The substrate bonding system then opens the gate 8531 on the transfer device 82 side of the chamber 851, thereby opening the chamber 851 to the atmosphere. Alternatively, a gas supply unit (not shown) may be included to supply a gas containing H radicals or OH radicals into the chamber 851 of the load lock unit 85 or the chamber 863 of the transfer device 86, in place of the water vapor supply unit.

[0172] In various embodiments, for example, Figure 31 As shown, the substrate bonding system may include an activation treatment device 10002 having a particle beam source for irradiating the substrates W1 and W2 with a particle beam to activate the bonding surfaces of the substrates W1 and W2. The activation treatment device 10002 includes a chamber 10212, a stage 10210 for holding the substrates W1 and W2, a particle beam source 10061, and a beam source transport unit 10063. Figure 31 In the embodiment, the same structure as that in each embodiment is marked with Figure 2 The activation treatment device 10002 has a plasma chamber 10213, an induction coil 215, and a high-frequency power supply 216. In addition, the activation treatment device 10002 has a stage driving unit 10623, such as Figure 31 As shown by arrow AR1003, the stage 10210 is driven to rotate about an axis perpendicular to its thickness direction. The stage 10210 has, for example, a vacuum suction seat, and when the substrates W1 and W2 are loaded, the substrates W1 and W2 are sucked and held.

[0173] The particle beam source 10061 is, for example, a Fast Atom Beam (FAB) source, and includes a discharge chamber 10612, an electrode 10611 disposed within the discharge chamber 10612, a beam source driver 10613, and a gas supply unit 10614 for supplying nitrogen gas into the discharge chamber 10612. The peripheral wall of the discharge chamber 10612 is provided with a FAB emission port 10612a for emitting neutral atoms. The discharge chamber 10612 is formed of a carbon material. The discharge chamber 10612 is shaped like an elongated box, with multiple FAB emission ports 10612a arranged in a straight line along its longitudinal direction. The beam source driver 10613 includes a plasma generating unit (not shown) for generating nitrogen plasma within the discharge chamber 10612, and a DC power supply (not shown) for applying a DC voltage between the electrode 10611 and the peripheral wall of the discharge chamber 10612. The beam source driver 10613 generates nitrogen plasma within the discharge chamber 10612 and applies a DC voltage between the peripheral wall of the discharge chamber 10612 and the electrode 10611. At this time, nitrogen ions in the plasma are attracted to the peripheral wall of the discharge chamber 10612. As the nitrogen ions pass through the FAB emission port 10612a toward the FAB emission port 10612a, they receive electrons from the peripheral wall of the discharge chamber 10612, which is formed of a carbon material at the outer periphery of the FAB emission port 10612a. These nitrogen ions then become electrically neutral nitrogen atoms and are released from the discharge chamber 10612. However, some of the nitrogen ions are unable to receive electrons from the peripheral wall of the discharge chamber 10612 and are released from the discharge chamber 10612 as nitrogen ions. Furthermore, part or all of the FAB frame may be formed of Si. In this way, since Si particles are released simultaneously with the Ar beam, Si is implanted into the interface. The implanted Si can also generate more OH groups due to adsorption of OH groups, thereby improving the bonding strength.

[0174] The beam source transport unit 10063 includes a slender support rod 10631 that is inserted through a hole 10212a provided in the chamber 10212 and supports the particle beam source 10061 at one end, a support body 10632 that supports the support rod 10631 at the other end, and a support body driving unit 10633 that drives the support body 10632. The beam source transport unit 10063 also includes a bellows 10634 that is interposed between the outer periphery of the hole 10212a in the chamber 10212 and the support body 10632 to maintain the vacuum level in the chamber 10212. Figure 31 As shown by the arrow AR1001, the support driving unit 10633 drives the support 10632 to the direction of inserting or removing the support rod 10631 into the chamber 10212, as shown in FIG. Figure 31As shown by arrow AR1002, the position of the particle beam source 10061 is changed in the chamber 10212. Here, the beam source transport unit 10063 moves the particle beam source 10061 in a direction perpendicular to the arrangement direction of the plurality of FAB emission ports 10612a.

[0175] Furthermore, the activation treatment apparatus 10002 includes a nitrogen supply unit 220A, which supplies nitrogen into the chamber 10212 via a supply pipe 223A. Then, when a high-frequency current is supplied to the induction coil 215 while the nitrogen is introduced into the plasma chamber 10213, plasma PLM2 is formed in the plasma chamber 10213. At this time, only the radicals contained in the plasma PLM2 generated in the plasma chamber 10213 flow downwardly into the plasma chamber 10213. During the irradiation of the particle beam, the pressure in the chamber 10212 is evacuated to 10°C using, for example, a turbomolecular pump. -3 The pressure in the chamber 10212 is on the order of Pa. During the free radical treatment, the pressure is increased to about several tens of Pa.

[0176] The activation processing apparatus 10002 first irradiates the bonding surface of substrates W1 and W2 with a particle beam while moving the particle beam source 10061 in the X-axis direction. Here, the activation processing apparatus 10002 moves the particle beam source 10061 in the +X direction, for example, to irradiate the bonding surface of substrates W1 and W2 with the particle beam. Thereafter, the activation processing apparatus 10002 moves the particle beam source 10061 in the -X direction, and irradiates the bonding surface of substrates W1 and W2 with the particle beam. The movement speed of the particle beam source 10061 is set, for example, to 1.2 to 14.0 mm / sec. The power supplied to the particle beam source 10061 is set, for example, to 1 kV and 100 mA. The flow rate of nitrogen or oxygen gas introduced into the discharge chamber 10612 of the particle beam source 10061 is set, for example, to 100 seem. The activation processing apparatus 10002 then inverts the stage 10210 to orient the bonding surfaces of the substrates W1 and W2 vertically upward. The activation processing apparatus 10002 then irradiates the bonding surfaces of the substrates W1 and W2 with nitrogen radicals generated in the plasma chamber 10213 .

[0177] In each embodiment, the imaging units 501A, 501B, and 501C are described as so-called reflective types, each including an imaging element and a coaxial illumination system. However, the configuration of the imaging units is not limited to this. For example, each imaging unit may include an imaging element (not shown) and a light source (not shown) disposed in a position facing each other with the substrates W1 and W2 sandwiched therebetween in the thickness direction of the substrates W1 and W2, and may be so-called transmissive type, in which the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c are imaged by receiving light emitted from the light source and transmitted through the substrates W1 and W2 at the imaging element.

[0178] Furthermore, in each embodiment, an example is described in which the substrate bonding apparatus 1 uses three imaging units 501A, 501B, and 501C to image three alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c, respectively, provided on substrates W1 and W2. However, the number of imaging units is not limited to three. For example, the substrate bonding apparatus may include two imaging units, and the two imaging units may be used to image two alignment marks, respectively, provided on substrates W1 and W2. In this case, the substrate bonding apparatus may include an imaging unit position adjustment unit that moves each of the two imaging units in a vertical direction, in the direction of the optical axes of the two imaging units, and in a horizontal direction orthogonal to the vertical direction. In this case, the substrate bonding apparatus rotates the stage 141 so that the two alignment marks are located between the plurality of electrode terminals 1411b, 1412b, 1421b, and 1422b of the electrostatic suction holders 1411, 1412, 1421, and 1422, and then receives the substrates W1 and W2. The substrate bonding apparatus then moves the two imaging units to positions where the alignment marks on substrates W1 and W2 can be captured, and then the two imaging units may capture the alignment marks. Alternatively, the substrate bonding apparatus may include a single imaging unit and an imaging unit position adjustment unit that moves the single imaging unit horizontally. Furthermore, if the imaging unit is a so-called transmissive type as described above, a light source position adjustment unit (not shown) that moves the light source may be included to correspond to the positions of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c.

[0179] In the first embodiment, the gas supply unit 1492 supplies a gas containing ions, and the gas outlet holes 1411c, 1412c, 1421c, 1422c, 1431c, and 1432c may also discharge a gas containing ions. In this case, the residual electrostatic force of the electrostatic suction seats 1411, 1421, 1412, and 1422 is neutralized by the ions contained in the gas, thereby facilitating the separation of the substrates W1 and W2 from the stage 141 and the head 142.

[0180] In each embodiment, in the substrate bonding apparatus 1, it is also possible to determine whether at least one of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c overlaps with any one of the electrostatic suction seats 1411, 1412, 1421, and 1422. Figure 32 The substrate bonding step performed by the substrate bonding system according to this modification is described in detail. Figure 32 In the embodiment, the same processing as in the first embodiment is marked with Figure 14 The same symbols. First, the substrate bonding device 1 performs a distance measurement step (step S1) of measuring the distance between the stage 141 and the head 142 at three positions of the stage 141 and the head 142 through the distance measuring unit 1493. Next, the substrate bonding device 1 calculates the distance between the bonding surface of the substrate W1 and the bonding surface of the substrate W2 based on the measured distances between the stage 141 and the head 142 at the three positions of the stage 141 and the head 142 and the thicknesses of the substrates W1 and W2. Then, the substrate bonding device 1 moves the head 142 vertically downward based on the calculated distance so that the substrates W1 and W2 approach each other (step S2). Next, the substrate bonding device 1 obtains captured images of the two substrates W1 and W2 from the imaging units 501A, 501B, and 501C of the position measuring unit 500. Next, the substrate bonding apparatus 1 determines, based on the acquired captured image, whether at least one of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for calculating the amount of positional deviation overlaps with any of the electrostatic chucks 1411, 1412, 1421, and 1422 (step S11001). If the substrate bonding apparatus 1 determines that all of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for calculating the amount of positional deviation do not overlap with the electrostatic chucks 1411, 1412, 1421, and 1422 (step S11001: No), the processing from step S3 onward is performed. On the other hand, if the substrate bonding apparatus 1 determines that at least one of the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for calculating the amount of positional deviation overlaps with the electrostatic chucks 1411, 1412, 1421, and 1422 (step S11001: Yes). In this case, the transport device 84 removes the substrates W1 and W2 from the substrate bonding apparatus 1 (step S11002). Next, the substrate bonding apparatus 1 rotates the stage 141 and head 142 by a predetermined angle (step S11003). The transport device 84 then transports the substrates W1 and W2 back to the substrate bonding apparatus 1 (step S11004). The process of step S1 is then repeated.

[0181] According to this configuration, even if the conveying device 84 does not include the conveying device shooting unit 844, all alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, MK2c and electrostatic suction seats 1411, 1412, 1421, 1422 used to calculate the position deviation amount can also be used to join the substrates W1 and W2 in a non-overlapping state.

[0182] In each embodiment, an example has been described in which the control unit 9 calculates a horizontal offset vector to minimize the positional deviation of each of the plurality of alignment mark groups imaged by the imaging unit 73 of the inspection device 7. However, this is not limiting. In a case where at least one of substrates W1 and W2 has a plurality of wafer formation regions serving as wafer bases, the control unit 9 may calculate a horizontal offset vector to minimize the proportion of wafer formation regions in the plurality of wafer formation regions that are defective due to relative positional deviation between substrates W1 and W2. Furthermore, in a case where at least one of substrates W1 and W2 has a plurality of wafer formation regions serving as wafer bases, the control unit 9 may calculate the positional deviation and positional deviation direction of each of the plurality of wafer formation regions other than the wafer formation region in which the positional deviation of substrate W2 relative to substrate W1 causes a defect. The positional deviation vector, determined by the calculated positional deviation and positional deviation direction, may be separated into axial components (i.e., XY direction components) and rotational components along two intersecting axes, and the horizontal offset vector may be calculated based on the separated XY direction and rotational components.

[0183] While each embodiment describes an example in which both the stage 141 and the head 142 each have a pressing mechanism 1441 and 1432, the present invention is not limited thereto; only one of the stage 141 and the head 142 may have a pressing mechanism. Here, since the electrostatic suction holder 1413 provided on the stage 141 acts in a direction of close contact with the stage 141 due to the weight of the substrate W1 itself, its holding force can be set relatively low. Therefore, when the pressing mechanism 1441 is provided only on the stage 141, when pressing the center portion of the substrate W1, the residual electrostatic force of the electrostatic suction holder 1431 can be suppressed, resulting in better adhesion of the substrate W1 to the stage 141.

[0184] While each embodiment and the aforementioned variations describe a substrate bonding system that performs so-called hydrophilic bonding on substrates W1 and W2, the present invention is not limited thereto. For example, the substrate bonding system can perform so-called room-temperature bonding, in which the bonding surfaces of substrates W1 and W2 are bonded together by contacting them after treating them with a particle beam in an ultra-high vacuum. Even in this case, the substrate bonding apparatus can bond substrates W1 and W2 from their center to their periphery, free from contact forces acting on the stage or head. Consequently, substrates W1 and W2 can be bonded with high positional accuracy across their entire surfaces without distortion. Furthermore, the substrate bonding system can perform so-called heat and pressure bonding, in which substrates W1 and W2 are bonded together via solder or metal portions, or so-called anodic bonding, in which a voltage is applied between substrates W1 and W2.

[0185] In this embodiment, after obtaining the above Figure 18 In the case of the position deviation vector distribution shown in (A), as Figure 18 (B) to Figure 18 As shown in (E), the positional deviation vector is separated into its XY direction components, rotational direction components, warping component, and twisting component. The horizontal offset of substrate W2 relative to substrate W1 is calculated based solely on the separated XY direction components and rotational direction components. The calculated horizontal offset can be directly added to the calculation of the alignment of substrate W2 relative to substrate W1 to calculate the corrected movement amount.

[0186] In the first embodiment, an example was described in which the inspection apparatus 7 photographs all of the plurality of alignment marks including the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c. However, the present invention is not limited thereto, and the inspection apparatus 7 may photograph all of alignment marks other than the alignment marks MK1a, MK2a, MK1b, MK2b, MK1c, and MK2c used for alignment in the substrate bonding apparatus 1.

[0187] In the first embodiment, the bonding apparatus 1 can align the substrate W2 relative to the substrate W1 using representative positions of the alignment marks MK2a, MK2b, and MK2c whose deviations reflect only the direction and size indicated by the pre-calculated horizontal offset vector.

[0188] The present invention is capable of various embodiments and modifications without departing from the broad spirit and scope of the present invention. Furthermore, the above-described embodiments are intended only to illustrate the present invention and are not intended to limit the scope of the present invention. That is, the scope of the present invention is defined by the scope of the claims, not the embodiments. Modifications within the scope of the claims and equivalent inventions are considered to be within the scope of the present invention.

[0189] Industrial Applicability

[0190] For example, the present invention is applicable to the manufacture of CMOS image sensors, memories, computing devices, and MEMS.

[0191] Explanation of symbols

[0192] 1: Substrate bonding device

[0193] 2,10002: Activation treatment device

[0194] 3: Cleaning device

[0195] 7: Inspection device

[0196] 9: Control Department

[0197] 71,141,210,2141,3141,3210,4141,5141,6141,7141,10210:Carrier

[0198] 72: Light Source

[0199] 73,501A,501B,501C,501D: Photography Department

[0200] 74: Horizontal direction drive unit

[0201] 82,84,86:Conveying device

[0202] 83,85: Load lock part

[0203] 120,831,843,851,863,10212: Chamber

[0204] 120a: Window

[0205] 121a, 201a: Vacuum pump

[0206] 121b, 201b: Exhaust pipe

[0207] 121c, 201c: Exhaust valve

[0208] 141b, 142b: through hole

[0209] 142, 2142, 3142, 4142, 5142, 6142, 7142: head

[0210] 143,10623: Stage drive unit

[0211] 144: Head drive unit

[0212] 145: XY direction drive unit

[0213] 146: Lifting drive unit

[0214] 147: Rotation drive unit

[0215] 148,1457: Pressure sensor

[0216] 212: Processing chamber

[0217] 213,10213:Plasma chamber

[0218] 215: Induction coil

[0219] 216: High frequency power supply

[0220] 217: Bias applying unit

[0221] 220A: Nitrogen supply unit

[0222] 220B: Oxygen supply unit

[0223] 221A: Nitrogen storage department

[0224] 221B: Oxygen storage unit

[0225] 222A, 222B: Supply valve

[0226] 223A, 223B: Supply pipe

[0227] 500,8500: Position measurement unit

[0228] 502,8502:Reflective component

[0229] 502a, 502b, 502c, 8502a, 8502b, 8502c, 8502d: Reflective surfaces

[0230] 503A, 503B, 503C: Shooting position adjustment unit

[0231] 511A, 511B, 511C, 731: Camera

[0232] 811,812: Import port

[0233] 813: Take the exit

[0234] 821,841,861:Transporting robot

[0235] 844: Transport device photography unit

[0236] 1211,8321,8331,8521,8531,8621: Gate

[0237] 1411, 1412, 1413, 1421, 1422, 1423, 3413, 3423, 4413, 4423, 5413, 5423: Electrostatic suction base 1411a, 1412a, 1413a, 1421a, 1422a, 1423a, 3413a, 3423a, 5413a, 5423a: Terminal electrodes 1411aa, 1421aa: Connecting portion

[0238] 1411ab, 1421ab: bending part

[0239] 1411b,1412b,1413b,1421b,1422b,1423b,3413b,3423b,4413b,4413,5413b,5423b: Electrode terminals

[0240] 1411c, 1412c, 1421c, 3423c, 4413c, 4423c, 5413c, 5423c: Gas outlet

[0241] 1411d,1413d,1423d,3413d,3423d,4413d,4423d,5413d,5423:Ditch

[0242] 1442b: Pressing drive unit

[0243] 1456,21611,21612,21613,21614,21621,21622,21623,21624: Piezoelectric actuators

[0244] 1481,1482:Substrate heating unit

[0245] 1491: Suction seat drive unit

[0246] 1492: Gas supply unit

[0247] 1493: Distance Measurement Unit

[0248] 10212a: hole

[0249] 10061: Particle beam source

[0250] 10063: Beam source transport department

[0251] 10611:Electrode

[0252] 10612:Discharge chamber

[0253] 10612a:FAB radiation port

[0254] 10613: Beam source drive unit

[0255] 10614: Gas supply unit

[0256] 10631:Support rod

[0257] 10632: Support

[0258] 10633: Support drive unit

[0259] 10634: Bellows

[0260] 61524,71511,71512,71513,71514,71521,71522,71523,71524: Pressing components

[0261] 34131d,34132d,34231d,34232d: accessory groove

[0262] 71611,71612,71613,71614,71621,71623,7162: Cylinder

[0263] A1: First Area

[0264] A2: Second Area

[0265] A12, A11: Sub-ring area

[0266] GAa, GAb, GAc: captured images

[0267] JLA, JLB, JLC: Optical Axis

[0268] MK1a,MK1b,MK1c,MK2a,MK2b,MK2c: Alignment marks

[0269] P11, P12, P13, P21, P22, P23: Location

[0270] PLM, PLM2: Plasma

[0271] VC1, VC2, VC3: virtual circle

[0272] W1, W2: substrate

[0273] W1c, W2c: Central

[0274] W1s,W2s: periphery.

Claims

1. A substrate bonding system for bonding a first substrate to a second substrate, comprising: A first substrate holding portion, holding the first substrate; A second substrate holding portion that holds the second substrate in a state where a bonding surface of the second substrate faces a bonding surface of the first substrate; At least one first electrostatic suction seat is arranged in a first area facing the periphery of the first substrate, and the first substrate is arranged at a preset substrate holding position of the first substrate holding portion; At least one second electrostatic suction seat is disposed in a second area inside the first area of ​​the first substrate holding portion and holds a portion of the first substrate disposed at the substrate holding position facing the second area; A suction seat driving unit, driving the first electrostatic suction seat and the second electrostatic suction seat respectively; A gas discharge portion, disposed in the second region of the first substrate holding portion, and discharging gas toward the first substrate side; a gas supply unit that supplies gas to the gas discharge unit; and The control unit releases the holding of the first substrate by the second electrostatic suction holder while the periphery of the first substrate is held by the first electrostatic suction holder before the central portion of the bonding surface of the first substrate contacts the central portion of the bonding surface of the second substrate, and controls the suction holder driving unit and the gas supply unit to discharge gas from the gas discharge unit. The first substrate holding portion includes a first recessed portion that is disposed in the second region and communicates with the gas discharge portion.

2. A substrate bonding system according to claim 1, wherein the aforementioned first recess includes at least one first groove in at least a portion of the aforementioned second area, and the aforementioned at least one first groove has a portion extending radially from the central portion of the aforementioned first substrate holding portion toward the peripheral edge of the aforementioned first substrate holding portion.

3. The substrate bonding system according to claim 2, wherein the first electrostatic suction seat has a plurality of first electrode terminals extending radially from a central portion of the first substrate holding portion toward a peripheral edge of the first substrate holding portion in the first region, The second electrostatic suction seat has a plurality of second electrode terminals extending radially from a central portion of the first substrate holding portion toward a peripheral edge of the first substrate holding portion in the second region. 4 . The substrate bonding system according to claim 3 , wherein the plurality of second electrode terminals have a shape whose width gradually increases toward a peripheral edge of the first substrate holding portion in a plan view.

5. The substrate bonding system according to claim 2, wherein the first recessed portion includes at least one first groove in the second region, and the at least one first groove has a portion extending in an arc shape with a central portion of the first substrate holding portion as a center. 6 . The substrate bonding system according to claim 5 , wherein the second electrostatic suction seat has a plurality of second electrode terminals extending in an arc shape with a central portion of the first substrate holding portion as a center in each of the second regions.

7. The substrate bonding system according to claim 2, wherein the first recessed portion includes at least one first groove in the second region, the at least one first groove having a portion extending spirally from a central portion of the first substrate holding portion. 8 . The substrate bonding system according to claim 7 , wherein the second electrostatic suction base has at least one electrode terminal spirally extending from a central portion of the first substrate holding portion in each of the second regions. 9 . The substrate bonding system according to claim 3 , wherein the at least one first groove has a portion extending along an extension direction of each of the plurality of second electrode terminals.

10. The substrate bonding system according to claim 9, wherein a portion of the plurality of second electrode terminals are electrically connected to the first terminal electrode, The remaining second electrode terminals among the plurality of second electrode terminals are electrically connected to a second terminal electrode different from the first terminal electrode. wherein the aforementioned part of the second electrode terminals and the aforementioned remaining second electrode terminals are arranged alternately in a direction orthogonal to the extending direction of the aforementioned plurality of second electrode terminals, The at least one first groove is disposed between a first electrode terminal electrically connected to the first terminal electrode and a second electrode terminal electrically connected to the second terminal electrode.

11. A substrate bonding system according to any one of claims 1 to 10, wherein before the central portion of the bonding surface of the first substrate contacts the central portion of the bonding surface of the second substrate, while the first substrate is held by the second electrostatic suction seat, after the gas is filled into the entire first recess from the gas discharge portion, the control portion controls the suction seat driving portion and the gas supply portion to release the hold of the first substrate by the second electrostatic suction seat. 12 . The substrate bonding system according to claim 1 , wherein the gas discharge unit discharges a gas containing ions. 13 . The substrate bonding system according to claim 1 , wherein the first substrate holding portion includes a second recessed portion provided in the first region and communicating with the gas discharge portion.

14. The substrate bonding system according to claim 13, wherein in a state where a central portion of the bonding surface of the first substrate contacts a central portion of the bonding surface of the second substrate and a periphery of the first substrate is held by the first electrostatic suction seat, after the gas is filled into the entire second recess from the gas discharge portion, the control portion controls the suction seat driving portion and the gas supply portion to release the first electrostatic suction seat from holding the first substrate, thereby bringing the first substrate into contact with the second substrate.

15. The substrate bonding system according to claim 13 or 14, wherein a portion of the plurality of first electrode terminals are electrically connected to the third terminal electrode, The remaining first electrode terminals among the plurality of first electrode terminals are electrically connected to a fourth terminal electrode different from the third terminal electrode. wherein the first electrode terminals and the remaining first electrode terminals are arranged alternately in a direction orthogonal to the extending direction of the plurality of first electrode terminals; wherein at least a portion of the second recess has at least one second groove in the first region, and the at least one second groove has a portion extending radially from a central portion of the first substrate holding portion toward a peripheral edge of the first substrate holding portion, The at least one second groove is arranged between the first electrode terminal electrically connected to the third terminal electrode and the first electrode terminal electrically connected to the fourth terminal electrode.

16. The substrate bonding system according to any one of claims 1 to 15, wherein the first electrostatic chuck comprises: A plurality of first electrode terminals extending radially from a central portion of the first substrate holding portion toward a peripheral edge of the first substrate holding portion in the first region; a ring-shaped third terminal electrode, in the first region, electrically connected to a portion of the plurality of first electrode terminals; and The annular fourth terminal electrode is electrically connected to the remaining first electrode terminals of the plurality of first electrode terminals in the first region. At least one of the third terminal electrode and the fourth terminal electrode has a plurality of bent portions that are bent so as to protrude in a direction away from the other electrode when viewed from above, and a connecting portion that connects the ends of two adjacent bent portions in the circumferential direction.

17. The substrate bonding system according to any one of claims 1 to 16, further comprising a pressing mechanism for pressing a central portion of the first substrate at a central portion of the first substrate holding portion, The control unit controls the pressing mechanism to release the holding of the first substrate by the second electrostatic suction seat in a state where the periphery of the first substrate is held by the first electrostatic suction seat, and after controlling the suction seat driving unit and the gas supply unit in a manner of discharging gas from the gas discharge unit, the first substrate is pressed by the pressing mechanism, and the central portion of the bonding surface of the first substrate is brought into contact with the central portion of the bonding surface of the second substrate in a state where the central portion of the first substrate is bent in a manner that protrudes further toward the second substrate than the periphery of the first substrate, thereby bonding the first substrate and the second substrate.

18. A substrate bonding system according to any one of claims 1 to 17, wherein the control unit controls the gas supply unit to discharge gas from the gas discharge unit so that the pressure at which the first substrate contacts the second substrate is less than a critical pressure at which the first substrate and the second substrate are temporarily bonded.

19. The substrate bonding system according to claim 18, further comprising a gas pressure detection unit configured to detect the gas pressure of a region between the first substrate holding unit and the first substrate when the gas is discharged from the gas discharge unit, The control unit controls the flow rate of the gas discharged from the gas discharge unit based on the gas pressure detected by the gas pressure detection unit so that the gas pressure is less than the critical pressure.

20. The substrate bonding system according to any one of claims 1 to 19, wherein the first electrostatic suction seat has a plurality of first electrode terminals. The second electrostatic suction seat has a plurality of second electrode terminals. A portion of the plurality of second electrode terminals are electrically connected to the first terminal electrode. The remaining second electrode terminals among the plurality of second electrode terminals are electrically connected to a second terminal electrode different from the first terminal electrode. A portion of the plurality of first electrode terminals are electrically connected to the third terminal electrode. The remaining first electrode terminals among the plurality of first electrode terminals are electrically connected to a fourth terminal electrode different from the third terminal electrode. wherein the aforementioned part of the second electrode terminals and the aforementioned other second electrode terminals are arranged in an alternating manner, wherein the first electrode terminals are arranged in an alternating manner with the remaining first electrode terminals; When releasing the first electrostatic suction seat from holding the periphery of the first substrate, the control unit alternately applies pulse voltages of different polarities between the first terminal electrode and the second terminal electrode, and controls the suction seat driving unit to gradually reduce the amplitude of the pulse voltage.

21. The substrate bonding system according to any one of claims 1 to 20, further comprising: A first imaging unit is disposed on a side of the first substrate holding unit opposite to a side supporting the first substrate; as well as The holding portion driving portion moves at least one of the first substrate holding portion and the second substrate holding portion relative to the other in a direction intersecting with a direction in which the first substrate holding portion and the second substrate holding portion face each other. The first substrate holding portion is formed of light-transmitting glass. The first substrate is provided with a plurality of first alignment marks. The second substrate is provided with the same number of second alignment marks as the plurality of first alignment marks. wherein the first photographing unit photographs the plurality of first alignment marks and the plurality of second alignment marks through the first substrate holding unit, The control unit also controls the holding unit driving unit to move at least one of the first substrate holding unit and the second substrate holding unit based on the captured images of the multiple first alignment marks and the multiple second alignment marks captured by the first capturing unit, so that the relative position deviation of the first substrate with respect to the second substrate is reduced.

22. The substrate bonding system according to claim 21, wherein in the first region of the first substrate holding portion, the first electrostatic suction seat is provided in each of a plurality of pre-set sub-annular regions centered on a central portion of the first substrate holding portion, and holds a portion of the first substrate disposed at the substrate holding position facing each of the plurality of sub-annular regions, The suction seat driving unit drives the first electrostatic suction seat disposed in each of the plurality of sub-annular regions, respectively. wherein the first photographing unit photographs the plurality of first alignment marks and the plurality of second alignment marks in the first region of the first substrate holding portion, Wherein, when the periphery of the first substrate is held by the first electrostatic suction seat, the control unit preferentially controls the suction seat driving unit from the sub-annular area located on the central part side of the first substrate holding part among the multiple sub-annular areas to release the first electrostatic suction seat from holding the first substrate.

23. The substrate bonding system according to claim 21 or 22, wherein the plurality of first alignment marks and the plurality of second alignment marks each have three or more. The control unit controls the holding unit driving unit to move at least one of the first substrate holding unit and the second substrate holding unit, so that the position deviation between the plurality of first alignment marks and the second alignment marks respectively corresponding to the plurality of first alignment marks is reduced.

24. A substrate bonding system according to any one of claims 21 to 23, wherein the first photographing unit photographs images of the plurality of first alignment marks and the plurality of second alignment marks in a state where light from a light source arranged on the side opposite to the side supporting the first substrate of the first substrate holding unit is irradiated toward the first substrate and the second substrate.

25. A substrate bonding system according to any one of claims 21 to 23, wherein the first photographing unit photographs images of the plurality of first alignment marks and the plurality of second alignment marks in a state where light from a light source arranged on the side opposite to the side supporting the second substrate of the second substrate holding unit is irradiated toward the first substrate and the second substrate. 26 . The substrate bonding system according to claim 24 , further comprising a light source position adjusting unit for moving the light source in accordance with positions of the plurality of first alignment marks and the plurality of second alignment marks.

27. A substrate bonding system according to any one of claims 21 to 26, wherein the number of the aforementioned first photographing units is the same as the aforementioned first alignment marks, and each first photographing unit photographs one first alignment mark among the aforementioned multiple first alignment marks, and one second alignment mark among the aforementioned multiple second alignment marks corresponding to the aforementioned first alignment mark. 28 . The substrate bonding system according to claim 21 , further comprising an imaging unit position adjustment unit configured to move the first imaging unit in accordance with positions of the plurality of first alignment marks and the plurality of second alignment marks. 29 . The substrate bonding system according to claim 21 , wherein at least one of the plurality of first electrode terminals and the plurality of second electrode terminals is formed of a transparent conductive film.

30. A substrate bonding system for bonding a first substrate to a second substrate, comprising: A first substrate holding portion, supporting the first substrate; A second substrate holding portion supports the second substrate in a state where a bonding surface of the second substrate faces a bonding surface of the first substrate; An electrostatic suction seat is disposed in a first area of ​​the periphery of the first substrate on the surface of the first substrate holding portion and holds the first substrate, wherein the first substrate is arranged at a preset substrate holding position of the first substrate holding portion; A suction seat driving unit drives the electrostatic suction seat; A plurality of pressing members are arranged in a second region inside the first region of the first substrate holding portion, each along a plurality of virtual circles whose centers coincide with the central portion of the first substrate holding portion, and press a portion of the second region of the first substrate disposed at the substrate holding position; A pressing member driving unit, which drives the plurality of pressing members respectively; and The control unit controls the pressing member driving unit so that the pressing member located on the central part side of the first substrate holding part among the plurality of pressing members preferentially presses the first substrate while the peripheral part of the first substrate is held by the first electrostatic suction seat before the central part of the bonding surface of the first substrate contacts the central part of the bonding surface of the second substrate.

31. The substrate bonding system according to claim 30, wherein the plurality of pressing members are in the shape of annular rings having different inner diameters from each other, and are concentrically arranged in the second region of the first substrate holding portion with their centers being aligned with a central portion of the first substrate holding portion.

32. The substrate bonding system according to claim 30 or 31, further comprising a pressing mechanism for pressing a central portion of the first substrate at a central portion of the first substrate holding portion, The control unit presses the first substrate through the pressing mechanism, and in a state where the central portion of the first substrate is bent in a manner that the central portion of the first substrate protrudes further toward the second substrate than the peripheral portion of the first substrate, makes the central portion of the bonding surface of the first substrate contact with the central portion of the bonding surface of the second substrate, thereby controlling the pressing mechanism in a manner that the first substrate and the second substrate are bonded.

33. A substrate bonding system according to any one of claims 30 to 32, wherein the control unit controls the pressing member driving unit so that the multiple pressing members press the first substrate, so that the pressure of the first substrate contacting the second substrate is less than the critical pressure of temporary bonding between the first substrate and the second substrate.

34. The substrate bonding system according to any one of claims 30 to 33, wherein the pressing member driving portion comprises a piezoelectric actuator, and the piezoelectric actuator causes the plurality of pressing members to move in a direction approaching the second substrate holding portion or in a direction away from the second substrate holding portion, respectively.

35. The substrate bonding system according to claim 34, wherein the control unit controls the movement amount of each of the plurality of pressing members by controlling the amount of change in the length of the piezoelectric actuator in the facing direction between the first substrate holding unit and the second substrate holding unit.

36. The substrate bonding system according to any one of claims 30 to 33, wherein the pressing member driving portion moves the plurality of pressing members toward or away from the second substrate holding portion by air pressure. 37 . The substrate bonding system according to claim 36 , wherein the control unit controls the movement amount of each of the plurality of pressing members by controlling the air pressure.

38. A substrate bonding system according to any one of claims 30 to 36, wherein the control unit controls the pressing member driving unit so that the speed at which the multiple pressing members sequentially contact the first substrate from a portion close to the central portion of the first substrate holding portion is faster than the speed at which the first substrate and the second substrate are temporarily bonded from a state in which the central portion of the bonding surface of the first substrate contacts the central portion of the bonding surface of the second substrate toward the periphery of the first substrate and the periphery of the second substrate.

39. The substrate bonding system according to any one of claims 1 to 38, wherein the first substrate is provided with at least one third alignment mark, the third alignment mark being different from the plurality of first alignment marks, The second substrate is provided with a fourth alignment mark, the fourth alignment mark is different from the plurality of second alignment marks, and the plurality of second alignment marks is the same in number as the at least one third alignment mark. The inspection device further includes a second photographing unit for photographing all of the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark of the first substrate and the second substrate bonded to each other, The control unit calculates the position deviation amount and position deviation direction of each of the plurality of first alignment marks and the plurality of second alignment marks, and the position deviation amount and position deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on the captured images obtained by capturing the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark through the second capturing unit, separates the axial component and the rotational direction component of the position deviation vector along the two intersecting axes determined by the calculated position deviation amount and position deviation direction, and calculates a horizontal offset reflecting the axial offset and the rotational direction offset based on the separated axial component and the rotational direction component, the axial offset being the axial offset of the second substrate relative to the first substrate when the first substrate is bonded to the second substrate, and the rotational direction offset being the offset in the rotational direction.

40. The substrate bonding system according to any one of claims 1 to 39, wherein the first substrate is provided with at least one third alignment mark, the third alignment mark being different from the plurality of first alignment marks, The second substrate is provided with a fourth alignment mark, the fourth alignment mark is different from the plurality of second alignment marks, and the plurality of second alignment marks is the same in number as the at least one third alignment mark. The inspection device further includes a second photographing unit for photographing all of the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark of the first substrate and the second substrate bonded to each other, The control unit calculates the position deviation amount and position deviation direction of each of the plurality of first alignment marks and the plurality of second alignment marks, and the position deviation amount and position deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on the captured images obtained by capturing the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark through the second capturing unit, separates the warping component of the position deviation vector determined by the calculated position deviation amount and position deviation direction, and calculates the protrusion offset amount of the peripheral portion of the first substrate relative to the central portion of the first substrate as the protrusion amount toward the second substrate side when the first substrate is joined to the second substrate based on the separated warping component.

41. A substrate bonding system for bonding a first substrate provided with a plurality of first alignment marks to a second substrate provided with a plurality of second alignment marks, comprising: A joining device having: A first substrate holding portion, holding the first substrate; A second substrate holding portion that holds the second substrate in a state where a bonding surface of the second substrate faces a bonding surface of the first substrate; First Filming Department; as well as a holding portion driving portion for moving at least one of the first substrate holding portion and the second substrate holding portion relative to the other in a direction intersecting with a direction in which the first substrate holding portion and the second substrate holding portion face each other; An inspection device having a second imaging unit; and Control Department, The first substrate is provided with at least one third alignment mark, and the at least one third alignment mark is different from the plurality of first alignment marks. The second substrate is provided with a fourth alignment mark, the fourth alignment mark is different from the plurality of second alignment marks, and the plurality of second alignment marks is the same in number as the at least one third alignment mark. wherein the second photographing unit photographs all of the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark of the first substrate and the second substrate bonded to each other, The control unit calculates the position deviation amount and position deviation direction of each of the plurality of first alignment marks and the plurality of second alignment marks, and the position deviation amount and position deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on the captured images obtained by capturing the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark through the second capturing unit, separates the axial component and the rotational component of the position deviation vector along the two intersecting axes determined by the calculated position deviation amount and position deviation direction, and calculates a horizontal offset reflecting the axial offset and the rotational offset based on the separated axial component and the rotational component, the axial offset being the axial offset of the second substrate relative to the first substrate when the first substrate is bonded to the second substrate, and the rotational offset being the offset in the rotational direction.

42. The substrate bonding system according to claim 41, wherein the control unit calculates the horizontal offset based on the positional deviation amount and the statistical value of the positional deviation direction calculated with respect to a preset number of the first substrate and the second substrate bonded to each other.

43. The substrate bonding system according to claim 41 or 42, wherein the control unit calculates the horizontal offset for each group of a plurality of first alignment marks and a plurality of second alignment marks photographed by the first photographing unit.

44. The substrate bonding system according to claim 43, wherein the control unit calculates the horizontal offset so as to minimize the positional deviation of each group of the plurality of first alignment marks and the second alignment marks photographed by the first imaging unit.

45. The substrate bonding system according to claim 43, wherein at least one of the first substrate and the second substrate has a plurality of wafer forming regions as wafer bases, The control unit calculates the horizontal offset so as to minimize the ratio of defective wafer forming regions among the plurality of wafer forming regions caused by a positional deviation of the second substrate relative to the first substrate.

46. ​​A substrate bonding system according to claim 45, wherein the control unit calculates the position deviation amount and the position deviation direction in each of the chip forming areas other than the chip forming area having defects caused by the position deviation of the second substrate relative to the first substrate among the multiple chip forming areas, separates the axial component and the rotational direction component of the position deviation vector determined by the calculated position deviation amount and the position deviation direction along the two intersecting axis directions, and calculates the horizontal offset based on the separated axial component and the rotational direction component.

47. A substrate joining system according to any one of claims 41 to 46, wherein the control unit controls the holding unit driving unit to move at least one of the first substrate holding unit and the second substrate holding unit, so that the position deviation amount of the plurality of first alignment marks and the second alignment marks respectively corresponding to the plurality of first alignment marks is in a state of being offset only by the horizontal offset amount.

48. The substrate bonding system according to any one of claims 41 to 47, further comprising a first imaging unit disposed on a side of the first substrate holding unit opposite to a side supporting the first substrate, The control unit calculates a position deviation error as an error in the position deviation of each of the plurality of first alignment marks and the plurality of second alignment marks based on a captured image obtained by capturing the plurality of first alignment marks and the plurality of second alignment marks by the first capturing unit after the first substrate and the second substrate are separated and the alignment of the first substrate and the second substrate is completed, and updates the horizontal offset of each of the groups of the first alignment mark and the second alignment mark using the calculated position deviation error.

49. The substrate bonding system according to any one of claims 41 to 48, further comprising a first imaging unit disposed on a side of the first substrate holding unit opposite to a side supporting the first substrate, The control unit calculates the position deviation amount and the position deviation direction of each of the plurality of first alignment marks and the plurality of second alignment marks based on a captured image obtained by photographing the plurality of first alignment marks and the plurality of second alignment marks by the first photographing unit in a state where the first substrate and the second substrate are separated, and a captured image obtained by photographing the plurality of first alignment marks and the plurality of second alignment marks of the first substrate and the second substrate bonded to each other by the first photographing unit, and calculates the horizontal offset based on the calculated position deviation amount and position deviation direction.

50. A substrate bonding system according to any one of claims 41 to 49, wherein the control unit calculates the position deviation amount and position deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on the captured images obtained by capturing the at least one third alignment mark and the at least one fourth alignment mark, separates the axial component and the rotational direction component of the position deviation vector along two intersecting axes determined by the calculated position deviation amount and the position deviation direction, and calculates the horizontal offset corresponding to the group of the first alignment mark and the second alignment mark captured by the first capturing unit based on the separated axial component and the rotational direction component.

51. The substrate bonding system according to any one of claims 41 to 50, wherein the control unit calculates a horizontal offset vector reflecting the horizontal offset amount.

52. A substrate bonding system for bonding a first substrate provided with a plurality of first alignment marks to a second substrate provided with a plurality of second alignment marks, comprising: A joining device having: A first substrate holding portion, holding the first substrate; A second substrate holding portion that holds the second substrate in a state where a bonding surface of the second substrate faces a bonding surface of the first substrate; First Filming Department; as well as a holding portion driving portion for moving at least one of the first substrate holding portion and the second substrate holding portion relative to the other in a direction intersecting with a direction in which the first substrate holding portion and the second substrate holding portion face each other; and Control Department, The control unit separates the axial component and the rotational direction component of the position deviation vector determined by the calculated position deviation amount and the position deviation direction of each of the multiple first alignment marks and the multiple second alignment marks, respectively, along the intersecting two axis directions, and based on the separated axial component and the rotational direction component, uses the representative positions of the multiple second alignment marks that only deviate from the horizontal offset vector to perform alignment of the second substrate relative to the first substrate, the horizontal offset vector is used as a reflection of the axial offset amount and the rotational direction offset, the axial offset amount is used as the axial offset of the second substrate relative to the first substrate when the first substrate and the second substrate are joined, and the rotational direction offset is used as the offset in the rotational direction.

53. A substrate bonding system for bonding a first substrate provided with a plurality of first alignment marks to a second substrate provided with a plurality of second alignment marks, comprising: A joining device having: A first substrate holding portion, holding the first substrate; A second substrate holding portion that holds the second substrate in a state where a bonding surface of the second substrate faces a bonding surface of the first substrate; First Filming Department; as well as a holding portion driving portion for moving at least one of the first substrate holding portion and the second substrate holding portion relative to the other in a direction intersecting with a direction in which the first substrate holding portion and the second substrate holding portion face each other; An inspection device having a second imaging unit; and Control Department, The first substrate is provided with at least one third alignment mark, and the at least one third alignment mark is different from the plurality of first alignment marks. The second substrate is provided with a fourth alignment mark, the fourth alignment mark is different from the plurality of second alignment marks, and the plurality of second alignment marks is the same in number as the at least one third alignment mark. wherein the second photographing unit photographs all of the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark of the first substrate and the second substrate bonded to each other, The control unit calculates the position deviation amount and position deviation direction of each of the plurality of first alignment marks and the plurality of second alignment marks, and the position deviation amount and position deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on the captured images obtained by capturing the plurality of first alignment marks, the plurality of second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark through the second capturing unit, separates the warping component of the position deviation vector determined by the calculated position deviation amount and position deviation direction, and calculates the protrusion offset amount of the peripheral portion of the first substrate relative to the central portion of the first substrate as the protrusion amount toward the second substrate side when the first substrate is joined to the second substrate based on the separated warping component.

54. The substrate bonding system according to claim 53, wherein the control unit calculates the protrusion offset so that the warping amount of the first substrate and the second substrate bonded to each other is 0.

55. The substrate bonding system according to claim 53 or 54, wherein the control unit calculates the protrusion offset based on the position deviation amount and the statistical value of the position deviation direction calculated with respect to a preset number of the first substrate and the second substrate bonded to each other.

56. A substrate bonding method for bonding a first substrate to a second substrate, comprising: The step of holding the periphery of the first substrate on a first electrostatic suction seat, wherein the first electrostatic suction seat is disposed in a first area facing the periphery of the first substrate, and the first substrate is disposed in a preset substrate holding position of the first substrate holding portion; A step of holding the second substrate on a second substrate holding portion in a state where the bonding surface of the second substrate faces the bonding surface of the first substrate; A step of discharging gas into a first recess of the gas discharging portion of the first substrate holding portion while the periphery of the first substrate is held by the first electrostatic suction seat, wherein the first substrate holding portion has the first recess, and the first recess is connected to the gas discharging portion of the second area disposed inside the first area; and After the gas is discharged into the first recessed portion, a central portion of the bonding surface of the first substrate is brought into contact with a central portion of the bonding surface of the second substrate.

57. A substrate bonding method for bonding a first substrate to a second substrate, comprising: The step of holding the first substrate by a substrate holding portion, wherein the substrate holding portion is provided in a first area facing the periphery of the first substrate, and the first substrate is arranged at a preset substrate holding position of the first substrate holding portion; A step of holding the second substrate by a second substrate holding portion in a state where the bonding surface of the second substrate faces the bonding surface of the first substrate; In a state in which the periphery of the first substrate is held by the substrate holding portion, a plurality of pressing members are arranged along a plurality of virtual circles whose centers coincide with the central portion of the first substrate holding portion in a second region inside the first region of the first substrate holding portion, and the first substrate is preferentially pressed by a pressing member located on the central portion side of the first substrate holding portion among a plurality of pressing members facing the second region of the first substrate arranged at the substrate holding position; as well as A step of bringing a center portion of a bonding surface of the first substrate into contact with a center portion of a bonding surface of the second substrate after the first substrate is pressed by the plurality of pressing members.

58. The substrate bonding method according to claim 56 or 57, further comprising: The first substrate holding portion is formed of light-transmitting glass, the first substrate is provided with three or more first alignment marks, the second substrate is provided with three or more second alignment marks, the same number as the three or more first alignment marks, and the first substrate holding portion is used to photograph the three or more first alignment marks and the three or more second alignment marks by a first photographing portion provided on a side of the first substrate holding portion opposite to a side on which the first substrate is supported; and The step of moving at least one of the first substrate holding portion and the second substrate holding portion so that the positional deviation between the three or more first alignment marks and the second alignment marks respectively corresponding to the three or more first alignment marks is reduced.

59. The substrate bonding method according to claim 58, further comprising the step of photographing all of the three or more first alignment marks, the three or more second alignment marks, at least one third alignment mark different from the three or more first alignment marks, and at least one fourth alignment mark different from the three or more second alignment marks which are the same number as the at least one third alignment mark, of the first substrate and the second substrate bonded to each other by a second imaging unit different from the first imaging unit; and Based on the captured images obtained by capturing the above-mentioned three or more first alignment marks, the above-mentioned three or more second alignment marks, the above-mentioned at least one third alignment mark, and the above-mentioned at least one fourth alignment mark through the above-mentioned second imaging unit, the position deviation amount and the position deviation direction of each of the above-mentioned three or more first alignment marks and the above-mentioned three or more second alignment marks, and the position deviation amount and the position deviation direction of each of the above-mentioned at least one third alignment mark and the above-mentioned at least one fourth alignment mark are calculated, the axial component and the rotational direction component of the position deviation vector determined by the calculated position deviation amount and the position deviation direction are separated along the two intersecting axis directions, and based on the separated above-mentioned axial component and the above-mentioned rotational direction component, the horizontal offset amount as a vector reflecting the axial offset amount and the rotational direction offset amount is calculated, the axial offset amount being the above-mentioned axial offset amount of the above-mentioned second substrate relative to the above-mentioned first substrate when the above-mentioned first substrate is bonded to the above-mentioned second substrate, and the rotational direction offset amount being the offset amount in the rotational direction.

60. The substrate bonding method according to claim 58 or 59, further comprising the step of photographing all of the three or more first alignment marks, the three or more second alignment marks, at least one third alignment mark different from the three or more first alignment marks, and the same number of fourth alignment marks as the at least one third alignment mark and different from the three or more second alignment marks of the first substrate and the second substrate bonded to each other by a second imaging unit different from the first imaging unit; and Based on the captured images obtained by capturing the above-mentioned three or more first alignment marks, the above-mentioned three or more second alignment marks, the above-mentioned at least one third alignment mark, and the above-mentioned at least one fourth alignment mark through the above-mentioned second imaging unit, the position deviation amount and the position deviation direction of each of the above-mentioned three or more first alignment marks and the above-mentioned three or more second alignment marks, and the position deviation amount and the position deviation direction of each of the above-mentioned at least one third alignment mark and the above-mentioned at least one fourth alignment mark are calculated, the warping component of the position deviation vector determined by the calculated position deviation amount and the position deviation direction is separated, and based on the separated above-mentioned warping component, a protrusion offset amount of the peripheral portion of the above-mentioned first substrate relative to the central portion of the above-mentioned first substrate as a protrusion amount toward the above-mentioned second substrate side when the above-mentioned first substrate and the above-mentioned second substrate are bonded is calculated.

61. A substrate bonding method, which is a substrate bonding method for bonding a first substrate to a second substrate, comprising: The first substrate is provided with three or more first alignment marks, the second substrate is provided with three or more second alignment marks of the same number as the three or more first alignment marks, and a first imaging unit is used to image all of the three or more first alignment marks, the three or more second alignment marks, at least one third alignment mark different from the three or more first alignment marks, and at least one fourth alignment mark different from the three or more second alignment marks of the same number as the at least one third alignment mark on each of the first substrate and the second substrate bonded to each other; and A step of calculating the positional deviation amount and positional deviation direction of each of the three or more first alignment marks and the three or more second alignment marks, and the positional deviation amount and positional deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark based on a captured image obtained by capturing the three or more first alignment marks, the three or more second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark through a second imaging unit different from the first imaging unit, separating the axial component and the rotational component of the positional deviation vector along two intersecting axial directions respectively, based on the separated axial component and the rotational component, calculating a horizontal offset vector as a vector reflecting the axial offset amount and the rotational offset amount, the axial offset amount being the axial offset amount of the second substrate relative to the first substrate when the first substrate and the second substrate are bonded, and the rotational offset amount being the offset amount in the rotational direction; and The step of moving at least one of the first substrate holding portion and the second substrate holding portion so that the positional deviations of the three or more first alignment marks and the second alignment marks respectively corresponding to the three or more first alignment marks are offset by only the horizontal deviation amount.

62. The substrate bonding method according to claim 61, wherein in the step of calculating the aforementioned horizontal offset, the aforementioned horizontal offset is calculated based on the aforementioned position deviation amount and the statistical value of the aforementioned position deviation direction calculated regarding a preset number of the aforementioned first substrates and the aforementioned second substrates bonded to each other.

63. A substrate bonding method according to claim 61 or 62, wherein in the step of calculating the horizontal offset, the horizontal offset is calculated separately for each of the groups of multiple first alignment marks and second alignment marks photographed by the first photographing unit.

64. A substrate bonding method according to claim 63, wherein in the step of calculating the aforementioned horizontal offset, the aforementioned horizontal offset is calculated so as to minimize the positional deviation of each group of multiple first alignment marks and second alignment marks photographed by the aforementioned first photographing unit.

65. The substrate bonding method according to claim 63, wherein at least one of the first substrate and the second substrate has a plurality of wafer forming regions as wafer bases, In the step of calculating the horizontal offset, the horizontal offset is calculated so as to minimize the ratio of defective chip forming areas among the plurality of chip forming areas caused by the position deviation of the second substrate relative to the first substrate.

66. The substrate bonding method according to claim 65, wherein the position deviation amount and the position deviation direction in each of the chip forming areas other than the chip forming area having defects caused by the position deviation of the second substrate relative to the first substrate among the multiple chip forming areas are calculated, the axial component and the rotational direction component of the position deviation vector determined by the calculated position deviation amount and the position deviation direction are separated respectively along the two intersecting axis directions, and the horizontal offset is calculated based on the separated axial component and the rotational direction component.

67. The substrate bonding method according to any one of claims 61 to 66 further includes a step of moving at least one of the aforementioned first substrate holding portion and the aforementioned second substrate holding portion so that the position deviation amount of the aforementioned multiple first alignment marks and the second alignment marks respectively corresponding to the aforementioned multiple first alignment marks is only offset by the aforementioned horizontal offset amount.

68. A substrate bonding method according to any one of claims 61 to 67, wherein in the step of calculating the aforementioned horizontal offset, based on the aforementioned first photographing portion arranged on the side of the aforementioned first substrate holding portion opposite to the side supporting the aforementioned first substrate, after the aforementioned first substrate is separated from the aforementioned second substrate and after the aforementioned first substrate and the aforementioned second substrate are aligned, a position deviation error is calculated as an error in the position deviation amounts of each of the aforementioned multiple first alignment marks and the aforementioned multiple second alignment marks, and the aforementioned horizontal offset of each of the groups of first alignment marks and second alignment marks is updated using the calculated position deviation error.

69. A substrate bonding method according to any one of claims 61 to 68, wherein in the step of calculating the aforementioned horizontal offset, based on a captured image obtained by photographing the aforementioned plurality of first alignment marks and the aforementioned plurality of second alignment marks with the aforementioned first substrate being separated from the aforementioned second substrate through a first photographing portion arranged on the side opposite to the side supporting the aforementioned first substrate of the aforementioned first substrate holding portion, and a captured image obtained by photographing the aforementioned plurality of first alignment marks and the aforementioned plurality of second alignment marks of the aforementioned first substrate and the aforementioned second substrate bonded to each other through the aforementioned first photographing portion, the positional deviation amounts and positional deviation directions of each of the aforementioned plurality of first alignment marks and the aforementioned plurality of second alignment marks are calculated, and the aforementioned horizontal offset is calculated based on the calculated positional deviation amounts and positional deviation directions.

70. The substrate bonding method according to any one of claims 61 to 69, wherein in the step of calculating the aforementioned horizontal offset amount, a horizontal offset vector reflecting the aforementioned horizontal offset amount is calculated.

71. A substrate bonding method for bonding a first substrate to a second substrate, comprising: The first substrate is provided with three or more first alignment marks, the second substrate is provided with three or more second alignment marks, the same number as the three or more first alignment marks, and the first imaging unit images all of the three or more first alignment marks and the three or more second alignment marks of the first substrate and the second substrate bonded to each other; and Separate the axial components and rotational direction components of the position deviation vectors determined by the position deviation amounts and position deviation directions of the three or more first alignment marks and the three or more second alignment marks, and based on the separated axial components and rotational direction components, use the representative positions of the plurality of second alignment marks that only deviate from the horizontal offset vector, with the horizontal offset vector serving as a vector reflecting the axial offset amount and the rotational direction offset amount, the axial offset amount serving as the axial offset amount of the second substrate relative to the first substrate when the first substrate is joined to the second substrate, and the rotational direction offset amount serving as the offset amount in the rotational direction, to perform the step of aligning the second substrate relative to the first substrate.

72. A substrate bonding method, which is a substrate bonding method for bonding a first substrate to a second substrate, comprising: The first substrate is provided with three or more first alignment marks, the second substrate is provided with three or more second alignment marks of the same number as the three or more first alignment marks, and a first imaging unit is used to image all of the three or more first alignment marks, the three or more second alignment marks, at least one third alignment mark different from the three or more first alignment marks, and fourth alignment marks different from the three or more second alignment marks of the first substrate and the second substrate bonded to each other; A step of calculating, based on an image obtained by photographing the three or more first alignment marks, the three or more second alignment marks, the at least one third alignment mark, and the at least one fourth alignment mark by the photographing unit, a positional deviation amount and a positional deviation direction of each of the three or more first alignment marks and the three or more second alignment marks, and a positional deviation amount and a positional deviation direction of each of the at least one third alignment mark and the at least one fourth alignment mark, separating a warping component of a positional deviation vector determined by the calculated positional deviation amount and positional deviation direction, and calculating, based on the separated warping component, a protrusion offset amount as an offset amount of a peripheral portion of the first substrate relative to a central portion of the first substrate toward the second substrate side when the first substrate and the second substrate are bonded; as well as The step of bringing the central portion of the bonding surface of the first substrate into contact with the central portion of the bonding surface of the second substrate in a state where the central portion of the first substrate protrudes toward the second substrate by the protrusion offset relative to the peripheral portion of the first substrate.

73. The substrate bonding method according to claim 72, wherein in the step of calculating the protrusion offset, the protrusion offset is calculated so that the warping amount of the first substrate and the second substrate bonded to each other is 0.

74. A substrate bonding method according to claim 72 or 73, wherein in the step of calculating the protrusion offset, the protrusion offset is calculated based on the statistical value of the position deviation amount and the position deviation direction calculated regarding a preset number of the first substrate and the second substrate bonded to each other.

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