Manufacturing method of through hole in PCB (Printed Circuit Board)

By forming a silicon nitride film layer and a photoresist cover layer on the PCB board, and the through holes are manufactured using photolithography and ion etching technology, the control and residual problems of chemical methods when manufacturing through holes on the PCB board are solved, and the processing accuracy and quality are improved.

CN119907185APending Publication Date: 2025-04-29SAE TECH DELEVOPMENT DONGGUAN
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Patent Information

Application Number
CN202311403206.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-10-26
Publication Date
2025-04-29

AI Technical Summary

Technical Problem

Chemical methods have problems such as lack of control and corrosion residues when manufacturing through holes on PCB boards, resulting in poor quality of PCB boards.

Method used

A silicon nitride film layer is formed on the substrate surface of the PCB board, and a photoresist cover layer is formed on its surface. A mask layer is formed by photolithography technology, and finally a through hole is formed on the silicon nitride film layer according to the pattern shape of the mask layer using ion etching technology.

Benefits of technology

This method can improve processing accuracy and quality, reduce corrosion residues, and significantly improve the overall quality of the PCB board.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention discloses a manufacturing method of a through hole in a PCB (Printed Circuit Board). The manufacturing method comprises the following steps: forming a silicon nitride film layer on the surface of a substrate of the PCB; forming a photoresist covering layer on the surface of the silicon nitride film layer; processing the surface of the photoresist covering layer to form a mask layer with a preset pattern shape; and performing ion etching on the silicon nitride film layer according to a preset pattern shape on the mask layer so as to form a through hole in the PCB. According to the technical scheme, the problems of lack of controllability, corrosive agent residues and the like existing in a chemical method can be solved, the machining precision and the machining quality are improved, and therefore the quality of the PCB is improved.
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Description

Technical Field

[0001] The invention relates to the technical field of PCB board processing, and in particular to a method for manufacturing a through hole on a PCB board. Background Art

[0002] In the manufacturing process of printed circuit boards (PCBs), through holes on PCBs are a very important component. Through holes are electrical connection points between two different layers on a PCB. One method of manufacturing through holes is to use chemical wet etching. However, this chemical method has problems such as lack of control and residual corrosive agents, resulting in poor quality of PCBs. Summary of the invention

[0003] The purpose of the embodiment of the present invention is to provide a method for manufacturing a through hole on a PCB board, which can solve the problems of lack of controllability and corrosive agent residue in the chemical method, improve the processing accuracy and processing quality, and thus improve the quality of the PCB board.

[0004] In order to achieve the above object, an embodiment of the present invention provides a method for manufacturing a through hole on a PCB board, comprising:

[0005] Forming a silicon nitride film layer on the surface of the substrate of the PCB board;

[0006] forming a photoresist covering layer on the surface of the silicon nitride film layer;

[0007] Processing the surface of the photoresist cover layer to form a mask layer having a preset pattern shape;

[0008] According to the preset pattern shape on the mask layer, the silicon nitride film layer is ion-etched to form a through hole on the PCB board.

[0009] Furthermore, the thickness of the silicon nitride film layer is 100 nm.

[0010] Furthermore, the thickness of the photoresist cover layer is 200 nm.

[0011] Furthermore, the process parameters of the ion etching include: an argon gas flow rate of 50 sccm, an ion beam energy of 500 eV, an ion beam current of 5 mA, a pressure of 5 mTorr, and an etching time of 3 min.

[0012] Furthermore, the diameter of the through hole is 500 nm.

[0013] Compared with the prior art, the embodiment of the present invention provides a method for manufacturing a through hole on a PCB board, first, a silicon nitride film layer is formed on the surface of a substrate of the PCB board; then, a photoresist cover layer is formed on the surface of the silicon nitride film layer; then, the surface of the photoresist cover layer is processed to form a mask layer with a preset pattern shape; finally, according to the preset pattern shape on the mask layer, the silicon nitride film layer is ion-etched to form a through hole on the PCB board. The embodiment of the present invention can solve the problems of lack of controllability and residual corrosive agent in the chemical method, improve the processing accuracy and processing quality, and thus improve the quality of the PCB board. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The present invention is a flowchart of a preferred embodiment of a method for manufacturing a through hole on a PCB board. DETAILED DESCRIPTION

[0015] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0016] The embodiment of the present invention provides a method for manufacturing a through hole on a PCB board. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for manufacturing a through hole on a PCB board provided by the present invention, wherein the method comprises steps S11 to S14:

[0017] Step S11, forming a silicon nitride film layer on the surface of the substrate of the PCB board;

[0018] Step S12, forming a photoresist covering layer on the surface of the silicon nitride film layer;

[0019] Step S13, processing the surface of the photoresist cover layer to form a mask layer having a preset pattern shape;

[0020] Step S14: performing ion etching on the silicon nitride film layer according to the preset pattern shape on the mask layer to form a through hole on the PCB board.

[0021] In a specific implementation, first, a silicon nitride film layer is formed on the surface of the substrate of the PCB board by using the existing coating technology; then, a photoresist cover layer is covered on the surface of the silicon nitride film layer; then, the surface of the photoresist cover layer is processed by using the existing photolithography technology to form a mask layer with a preset pattern shape on the surface of the photoresist cover layer; finally, the PCB board with the mask layer is placed in an ion etching device, and the silicon nitride film layer is ion-etched according to the preset pattern shape formed on the mask layer, so that a through hole is formed under the silicon nitride film layer, thereby forming a through hole on the PCB board.

[0022] It should be noted that the preset pattern shape is a shape required for manufacturing a through hole, for example, it may be a grid structure shape, a hole structure shape, etc.

[0023] In another preferred embodiment, the thickness of the silicon nitride film layer is 100 nm.

[0024] Specifically, in combination with the above embodiment, after the coating process is performed on the surface of the substrate of the PCB board, the thickness of the formed silicon nitride film layer is 100 nanometers.

[0025] In yet another preferred embodiment, the thickness of the photoresist capping layer is 200 nm.

[0026] Specifically, in combination with the above embodiment, after the photoresist cover layer is covered on the surface of the silicon nitride film layer, the thickness of the formed photoresist cover layer is 200 nanometers.

[0027] In another preferred embodiment, the process parameters of the ion etching include: an argon gas flow rate of 50 sccm, an ion beam energy of 500 eV, an ion beam current of 5 mA, a pressure of 5 mTorr, and an etching time of 3 min.

[0028] Specifically, in combination with the above embodiments, when the silicon nitride film layer is ion etched in an ion etching device, the ion etching process parameters used include: the reaction gas for ion etching is argon, the argon flow rate is 50 sccm, the ion beam energy is 500 eV, the ion beam current is 5 mA, the pressure is 5 mTorr, and the etching time is 3 min.

[0029] In yet another preferred embodiment, the diameter of the through hole is 500 nm.

[0030] Specifically, in combination with the above embodiment, the diameter of the through hole formed on the PCB board is 500 nanometers.

[0031] In combination with all the above embodiments, the implementation process of the present solution is described below through a specific embodiment, including: (1) using existing coating technology to form a silicon nitride film layer with a thickness of 100nm on the surface of the substrate of the PCB board; (2) covering the surface of the silicon nitride film layer with a thickness of 200nm; (3) using existing photolithography technology to process the surface of the photoresist cover layer to form a mask layer with a preset pattern shape on the surface of the photoresist cover layer, for example, a grid structure shape, a hole structure shape, etc.; (4) placing the PCB board with the mask layer in an ion etching device, under the process parameters of ion etching reaction gas of argon gas, argon gas flow of 50sccm, ion beam energy of 500eV, ion beam current of 5mA, and pressure of 5mTorr, according to the preset pattern shape formed on the mask layer, the silicon nitride film layer is ion-etched for 3min, so that a through hole is formed below the silicon nitride film layer, thereby forming a through hole on the PCB board, and the diameter of the formed through hole is 500nm.

[0032] In summary, the method for manufacturing a through hole on a PCB board provided by an embodiment of the present invention comprises the following steps: first, forming a silicon nitride film layer on the surface of a substrate of the PCB board; then, forming a photoresist covering layer on the surface of the silicon nitride film layer; then, processing the surface of the photoresist covering layer to form a mask layer having a preset pattern shape; finally, ion etching the silicon nitride film layer according to the preset pattern shape on the mask layer to form a through hole on the PCB board. The embodiment of the present invention can solve the problems of lack of controllability and residual corrosive agent in the chemical method, improve the processing accuracy and processing quality, and thus improve the quality of the PCB board; further, the embodiment of the present invention has the characteristics of high efficiency, high precision, and high processing quality, and is particularly suitable for manufacturing large-scale multi-layer printed circuit boards. By adopting the embodiment of the present invention, the production speed of printed circuit boards can be greatly accelerated, the production cost can be reduced, and the product quality can be improved.

[0033] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for manufacturing a through hole on a PCB board, characterized in that: include: Forming a silicon nitride film layer on the surface of the substrate of the PCB board; forming a photoresist covering layer on the surface of the silicon nitride film layer; Processing the surface of the photoresist cover layer to form a mask layer having a preset pattern shape; According to the preset pattern shape on the mask layer, the silicon nitride film layer is ion-etched to form a through hole on the PCB board.

2. The method for manufacturing a through hole on a PCB board according to claim 1, characterized in that: The thickness of the silicon nitride film layer is 100 nm.

3. The method for manufacturing a through hole on a PCB board according to claim 1, characterized in that: The thickness of the photoresist cover layer is 200 nm.

4. The method for manufacturing a through hole on a PCB board according to claim 1, characterized in that: The process parameters of the ion etching include: argon gas flow rate of 50 sccm, ion beam energy of 500 eV, ion beam current of 5 mA, pressure of 5 mTorr, and etching time of 3 min.

5. The method for manufacturing a through hole on a PCB board according to claim 1, characterized in that: The diameter of the through hole is 500 nm.