Method and system for optimizing gallium nitride power device driving circuit

Abstract

The invention relates to the technical field of circuit design, and provides an optimization method and system for a gallium nitride power device driving circuit, and the method comprises the steps: constructing a virtual device corresponding to a target device; wherein the target equipment comprises a driving circuit, the virtual equipment comprises a virtual driving circuit, and the driving circuit is a gallium nitride power device driving circuit; a control instruction corresponding to any working condition of the target equipment is sent to the virtual driving circuit, so that the virtual driving circuit controls the virtual equipment to run for a preset duration; after the virtual device is controlled to run for a preset time length, a temperature distribution diagram of the virtual drive circuit is obtained; generating a plurality of device distribution diagrams of the virtual driving circuit based on the temperature distribution diagram; determining a target device distribution diagram based on the device distribution diagrams; and adjusting the position of each virtual device of the virtual driving circuit based on the target device distribution diagram. The method is helpful for improving the performance stability of the driving circuit.

Description

Technical Field

[0001] The present application relates to the field of circuit design technology, and in particular to an optimization method and system for a gallium nitride power device driving circuit. Background Art

[0002] With the maturity of GaN technology, GaN power devices are widely used in electric vehicles, power conversion equipment, communications and other fields due to their high efficiency, high frequency and high power density. In order to give full play to the advantages of GaN power devices, the GaN power device driving circuit must have high stability and precise control performance. The design of existing GaN power device driving circuits usually relies on manual experience. Although this design method can achieve the basic design of GaN power device driving circuits, the heat generated by each device in the operation of the GaN power device driving circuit is quite different, and heat concentration is prone to occur, which in turn affects the performance of the GaN power device driving circuit. How to optimize the thermal distribution of the GaN power device driving circuit in the design stage has become an urgent problem to be solved. Summary of the invention

[0003] The present application provides a method and system for optimizing a gallium nitride power device driving circuit to solve the problems raised by the above background technology.

[0004] In a first aspect, the present application provides a method for optimizing a gallium nitride power device driving circuit, comprising: Constructing a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; Sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time; After controlling the virtual device to run for a preset time, obtaining a temperature distribution diagram of the virtual drive circuit; generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; Determining a target device distribution map based on each of the device distribution maps; The positions of the virtual devices of the virtual driving circuit are adjusted based on the target device distribution map.

[0005] In a possible implementation, the generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map includes: For each virtual device of the virtual driving circuit, determining a temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area; Based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device in the topology diagram is adjusted to obtain a plurality of device distribution diagrams of the virtual driving circuit, wherein the topology diagram is a topology diagram of the virtual driving circuit.

[0006] In a possible implementation, determining a temperature distribution region corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution region includes: Determine that the area composed of pixels corresponding to the temperature distribution area of ​​the virtual device is the temperature distribution area corresponding to the virtual device; Respectively obtaining pixel temperatures corresponding to each pixel in the temperature distribution area, and arranging the pixel temperatures in sequence to obtain a pixel temperature sequence; Combining the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein the number of pixel temperatures in each of the pixel temperature combinations is different from each other; For each of the pixel temperature combinations, obtaining a standard deviation between pixels in the pixel temperature combination, and determining that the pixel temperature combination is an intermediate target pixel temperature combination when the standard deviation is less than a preset standard deviation; Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination; An average value of the pixel temperatures of the target pixel temperature combination is determined as the temperature of the virtual device.

[0007] In a possible implementation manner, determining a target device distribution map based on each of the device distribution maps includes: For each of the device distribution maps, adjusting each virtual device of the virtual driving circuit based on the device distribution map, and generating a target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method; A target device distribution map is determined based on a target performance stability index corresponding to each of the device distribution maps.

[0008] In a possible implementation, the method for generating the target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method includes: For each working condition of the target device, generating an initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition; The minimum initial performance stability index is determined as the target performance stability index.

[0009] In a possible implementation, the generating of the initial performance stability index corresponding to the virtual driving circuit under the working condition after adjustment includes: Sending a control instruction corresponding to the working condition to the adjusted virtual drive circuit, recording the response time of the virtual device, and after controlling the virtual device to run for a preset time, obtaining a target temperature distribution diagram of the adjusted virtual drive circuit; Determine the reciprocal of the response time as a response rate factor; generating a thermal management performance factor based on the target temperature profile; The initial performance stability index is generated based on the response rate factor and the thermal management performance factor.

[0010] In a possible implementation manner, generating a thermal management performance factor based on the target temperature distribution map includes: Respectively obtain the temperature value corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values; A maximum temperature value among the temperature values ​​and the standard deviation are weightedly summed to obtain a target value, and a reciprocal corresponding to the target value is determined as the thermal management performance factor.

[0011] In a possible implementation, generating the initial performance stability index based on the response rate factor and the thermal management performance factor includes: Determining whether the response rate factor is less than a preset response rate factor, and determining whether the thermal management performance factor is less than a preset thermal management performance factor; If the response rate factor is less than a preset response rate factor and / or the thermal management performance factor is less than a preset thermal management performance factor, determining that the initial performance stability index is 0; If the response rate factor is not less than a preset response rate factor and the thermal management performance factor is not less than a preset thermal management performance factor, the response rate factor and the thermal management performance factor are weightedly summed to obtain the initial performance stability index.

[0012] In a second aspect, the present application provides an optimization system for a gallium nitride power device driving circuit, comprising: A construction module, used to construct a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; A sending module, used for sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to run for a preset time; An acquisition module, configured to acquire a temperature distribution diagram of the virtual drive circuit after controlling the virtual device to run for a preset time period; A generating module, configured to generate a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; A determination module, configured to determine a target device distribution map based on each of the device distribution maps; The adjustment module is used to adjust the position of each virtual device of the virtual driving circuit based on the target device distribution map.

[0013] The present application provides a method and system for optimizing a gallium nitride power device driving circuit, the method comprising: constructing a virtual device corresponding to a target device; wherein the target device comprises a driving circuit, the virtual device comprises a virtual driving circuit, and the driving circuit is a gallium nitride power device driving circuit; sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to run for a preset time; after controlling the virtual device to run for a preset time, obtaining a temperature distribution map of the virtual driving circuit; generating multiple device distribution maps of the virtual driving circuit based on the temperature distribution map; determining a target device distribution map based on each of the device distribution maps; and adjusting the position of each virtual device of the virtual driving circuit based on the target device distribution map. By constructing a virtual device model and performing simulation analysis, the method enables designers to accurately obtain the temperature distribution map of the virtual driving circuit in the design stage, and optimize the device layout based on the temperature distribution map, avoiding the shortcomings of relying on experience in traditional design methods, helping to prevent the heat collection phenomenon of the driving circuit during operation, improving the performance stability of the driving circuit, and reducing the loss and failure risk of the device due to overheating. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0015] Figure 1 A schematic flow chart of a method for optimizing a gallium nitride power device driving circuit provided in an embodiment of the present application; Figure 2 A schematic block diagram of the structure of an optimization system for a gallium nitride power device driving circuit provided in an embodiment of the present application; Figure 3 A schematic block diagram of the structure of a terminal device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0016] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0017] The flowcharts shown in the accompanying drawings are only examples and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may also be decomposed, combined or partially merged, so the actual execution order may change according to actual conditions.

[0018] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0019] It should be further understood that the term “and / or” used in the specification and appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0020] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0021] See also Figure 1 , Figure 1 A schematic diagram of a flow chart of a method for optimizing a gallium nitride power device driving circuit provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the optimization method of the gallium nitride power device driving circuit provided in the embodiment of the present application includes steps S1 to S5.

[0022] Step S1, constructing a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit.

[0023] Step S2: sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time period.

[0024] Step S3: After controlling the virtual device to run for a preset time, obtaining a temperature distribution diagram of the virtual driving circuit.

[0025] Step S4: generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map.

[0026] Step S5: determining a target device distribution map based on each of the device distribution maps.

[0027] Step S6: adjusting the position of each virtual device of the virtual driving circuit based on the target device distribution map.

[0028] In this embodiment, it specifically includes: In the above step S1, first, a virtual three-dimensional geometric structure of the target device is constructed based on the three-dimensional geometric structure of the target device, and for each component of the target device, the material information of the component is assigned to the corresponding part of the component in the virtual three-dimensional geometric structure.

[0029] In the above step S2, a control instruction corresponding to any working condition of the target device is sent to the virtual driving circuit, and the virtual device is controlled to run for a preset time under the control instruction.

[0030] In the above step S3, after the virtual device is controlled to run for a preset time, a temperature distribution diagram of the virtual driving circuit is obtained through a preset virtual infrared camera device.

[0031] In the above step S4, first, for each virtual device of the virtual drive circuit, the temperature distribution area corresponding to the virtual device is determined in the temperature distribution map, and the temperature of the virtual device is determined based on the temperature distribution area, and then, based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device is adjusted in the topological map to obtain multiple device distribution maps of the virtual drive circuit. It should be noted that the method of adjusting the distance between each virtual device and its adjacent virtual device in the topological map based on the temperature corresponding to each virtual device to obtain multiple device distribution maps of the virtual drive circuit is specifically introduced in the second embodiment and will not be repeated here.

[0032] In the above step S5, firstly, the target performance stability index corresponding to each of the device distribution maps is generated based on a preset target performance stability index generation method, and the device distribution map corresponding to the maximum target performance stability index is determined as the target device distribution map.

[0033] In the above step S6, the positions of the virtual devices of the virtual driving circuit are adjusted based on the target device distribution map, and the driving circuit is produced based on the adjusted virtual driving circuit.

[0034] The method provided in this embodiment, by constructing a virtual device model and performing simulation analysis, enables designers to accurately obtain the temperature distribution map of the virtual drive circuit during the design stage, and optimize the device layout based on the temperature distribution map, thereby avoiding the shortcomings of relying on experience in traditional design methods, helping to prevent heat accumulation in the drive circuit during operation, improving the performance stability of the drive circuit, and reducing the risk of device loss and failure due to overheating.

[0035] In some embodiments, generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map comprises the following steps: For each virtual device of the virtual driving circuit, determining a temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area; Based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device in the topology diagram is adjusted to obtain a plurality of device distribution diagrams of the virtual driving circuit, wherein the topology diagram is a topology diagram of the virtual driving circuit.

[0036] Wherein, determining the temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area, comprises the following steps: Determine that the area composed of pixels corresponding to the temperature distribution area of ​​the virtual device is the temperature distribution area corresponding to the virtual device; Respectively obtaining pixel temperatures corresponding to each pixel in the temperature distribution area, and arranging the pixel temperatures in sequence to obtain a pixel temperature sequence; specifically, for each pixel, converting the color value of the pixel into the pixel temperature corresponding to the pixel based on a preset color value-temperature mapping function; Combining the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein the number of pixel temperatures in each of the pixel temperature combinations is different from each other; specifically, extracting the first pixel temperature in the pixel temperature sequence to form a pixel temperature combination, extracting the first pixel temperature and the second pixel temperature in the pixel temperature sequence to form a pixel temperature combination, extracting the first pixel temperature, the second pixel temperature and the third pixel temperature in the pixel temperature sequence to form a pixel temperature combination, until all pixel temperatures in the pixel temperature sequence are extracted to form a pixel temperature combination, thereby obtaining the plurality of pixel temperature combinations; For each of the pixel temperature combinations, obtaining a standard deviation between pixels in the pixel temperature combination, and determining that the pixel temperature combination is an intermediate target pixel temperature combination when the standard deviation is less than a preset standard deviation; Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination; An average value of the pixel temperatures of the target pixel temperature combination is determined as the temperature of the virtual device.

[0037] It can be understood that the above-mentioned method of determining the temperature distribution area corresponding to the virtual device in the temperature distribution map and determining the temperature of the virtual device based on the temperature distribution area utilizes the stepwise combination and standard deviation analysis of the pixel temperature sequence, which helps to fully understand the thermal characteristics of each virtual device and thus accurately obtain the temperature of each virtual device.

[0038] Wherein, adjusting the distance between each virtual device and its adjacent virtual device in the topology diagram based on the temperature corresponding to each virtual device to obtain multiple device distribution diagrams of the virtual driving circuit includes: For any two adjacent virtual devices in the topology diagram, obtain the temperature difference between the two virtual devices and the temperature corresponding to the virtual device with a higher temperature, and obtain a distance adjustment index between the two virtual devices; Multiple device distribution diagrams are generated based on preset fuzzy logic and each of the distance adjustment indicators; it can be understood that in the same device distribution diagram, the smaller the temperature difference between two adjacent virtual devices and the higher the temperature corresponding to the virtual device with a higher temperature, the greater the distance value between the two virtual devices.

[0039] It can be understood that fuzzy logic can generate as many device distribution maps as possible, thereby facilitating effective optimization of the thermal distribution of the GaN power device driving circuit.

[0040] In some embodiments, determining a target device distribution map based on each of the device distribution maps comprises the following steps: For each of the device distribution maps, adjusting each virtual device of the virtual driving circuit based on the device distribution map, and generating a target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method; A target device distribution map is determined based on the target performance stability index corresponding to each of the device distribution maps; specifically, the device distribution map corresponding to the largest target performance stability index is determined as the target device distribution map.

[0041] The method for generating the target performance stability index of the virtual driving circuit after adjustment based on the preset target performance stability index generation method comprises the following steps: For each working condition of the target device, generating an initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition; The minimum initial performance stability index is determined as the target performance stability index.

[0042] It can be understood that the above-mentioned method of generating the target performance stability index of the adjusted virtual drive circuit based on a preset target performance stability index generation method, by generating the initial performance stability index under each working condition and determining the minimum initial performance stability index as the target performance stability index, can improve the fault tolerance of the designed drive circuit and thus improve its stability.

[0043] The step of generating the initial performance stability index of the virtual driving circuit under the working condition after adjustment comprises the following steps: Sending a control instruction corresponding to the working condition to the adjusted virtual drive circuit, recording the response time of the virtual device, and after controlling the virtual device to run for a preset time, obtaining a target temperature distribution diagram of the adjusted virtual drive circuit; wherein the response time refers to the time between the moment when the control instruction is sent to the virtual drive circuit and the moment when the virtual device starts to run; Determine the reciprocal of the response time as a response rate factor; generating a thermal management performance factor based on the target temperature profile; The initial performance stability index is generated based on the response rate factor and the thermal management performance factor.

[0044] It can be understood that the above-mentioned method of generating the initial performance stability index corresponding to the adjusted virtual driving circuit under the working condition, by combining the response rate factor with the thermal management performance factor, generates the initial performance stability index, which can comprehensively evaluate the overall performance stability of the virtual driving circuit from multiple angles, and can ensure that the circuit design can take into account both efficient response and good thermal management under actual working conditions, avoid system failures caused by excessively high temperatures or response delays, thereby improving the stability and reliability of the gallium nitride power device driving circuit.

[0045] The step of generating a thermal management performance factor based on the target temperature distribution map comprises the following steps: Respectively obtain the temperature value corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values; The maximum temperature value among the temperature values ​​and the standard deviation are weightedly summed to obtain a target value, and the inverse corresponding to the target value is determined as the thermal management performance factor; wherein the weight coefficient corresponding to the maximum temperature value is greater than the weight coefficient corresponding to the standard deviation.

[0046] It can be understood that the above-mentioned method of generating the thermal management performance factor based on the target temperature distribution map can effectively balance the impact of the maximum temperature value and the standard deviation on the thermal management performance and comprehensively evaluate the thermal management performance factor by weighted summation of these two factors.

[0047] The step of generating the initial performance stability index based on the response rate factor and the thermal management performance factor comprises the following steps: Determining whether the response rate factor is less than a preset response rate factor, and determining whether the thermal management performance factor is less than a preset thermal management performance factor; If the response rate factor is less than a preset response rate factor and / or the thermal management performance factor is less than a preset thermal management performance factor, determining that the initial performance stability index is 0; If the response rate factor is not less than the preset response rate factor and the thermal management performance factor is not less than the preset thermal management performance factor, the response rate factor and the thermal management performance factor are weightedly summed to obtain the initial performance stability index; wherein the weight coefficient corresponding to the response rate factor is greater than the weight coefficient corresponding to the thermal management performance factor.

[0048] It can be understood that the above-mentioned method of generating the initial performance stability index based on the response rate factor and the thermal management performance factor can promptly set the initial performance stability index to 0 when the response rate factor or the thermal management performance factor does not meet the preset standard. This mechanism can effectively prevent unqualified situations in the design, avoid unstable or unreliable design schemes from entering the subsequent development stage, and reduce the risk of system failure from the source.

[0049] See also Figure 2 , Figure 2 The schematic block diagram of the structure of the optimization system 100 for the gallium nitride power device driving circuit provided in the embodiment of the present application is as follows: Figure 2 As shown, the optimization system 100 of the gallium nitride power device driving circuit provided in the embodiment of the present application includes: The construction module 110 is used to construct a virtual application scenario of the high-voltage connector; the virtual application scenario includes a virtual three-dimensional structure of the high-voltage connector, and the high-voltage connector is a flat terminal high-voltage connector.

[0050] The construction module 110 is used to construct a virtual device corresponding to the target device; wherein the target device includes a driving circuit, the virtual device includes a virtual driving circuit, and the driving circuit is a gallium nitride power device driving circuit.

[0051] The sending module 120 is used to send a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time.

[0052] The acquisition module 130 is used to acquire the temperature distribution diagram of the virtual driving circuit after controlling the virtual device to run for a preset time period.

[0053] The generating module 140 is configured to generate a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map.

[0054] The determination module 150 is configured to determine a target device distribution map based on each of the device distribution maps.

[0055] The adjustment module 160 is configured to adjust the position of each virtual device of the virtual driving circuit based on the target device distribution map.

[0056] It should be noted that those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the system and each module described above can refer to the process in the aforementioned embodiment of the optimization method for the gallium nitride power device driving circuit, and will not be repeated here.

[0057] The optimization system 100 of the GaN power device driving circuit provided in the above embodiment can be implemented in the form of a computer program. The computer program can be used in Figure 3 The system is run on the terminal device 200 shown.

[0058] See also Figure 3 , Figure 3 The present invention provides a schematic block diagram of the structure of a terminal device 200 according to an embodiment of the present application. The terminal device 200 includes a processor 201 and a memory 202. The processor 201 and the memory 202 are connected via a device bus 203, wherein the memory 202 may include a non-volatile storage medium and an internal memory.

[0059] The non-volatile storage medium can store a computer program. The computer program includes program instructions, and when the program instructions are executed by the processor 201, the processor 201 can execute any of the above-mentioned optimization methods for the gallium nitride power device driving circuit.

[0060] The processor 201 is used to provide computing and control capabilities to support the operation of the entire terminal device 200.

[0061] The internal memory provides an environment for the operation of the computer program in the non-volatile storage medium. When the computer program is executed by the processor 201, the processor 201 can execute any of the above-mentioned optimization methods for the gallium nitride power device driving circuit.

[0062] Those skilled in the art will understand that Figure 3 The structure shown in the figure is only a block diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the terminal device 200 involved in the scheme of the present application. The specific terminal device 200 may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0063] It should be understood that the processor 201 may be a central processing unit (CPU), and the processor 201 may also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0064] In some embodiments, the processor 201 is used to run a computer program stored in the memory to implement the following steps: Constructing a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; Sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time; After controlling the virtual device to run for a preset time, obtaining a temperature distribution diagram of the virtual drive circuit; generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; Determining a target device distribution map based on each of the device distribution maps; The positions of the virtual devices of the virtual driving circuit are adjusted based on the target device distribution map.

[0065] It should be noted that those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the terminal device 200 described above can refer to the process of the aforementioned optimization method of the gallium nitride power device driving circuit, and will not be repeated here.

[0066] An embodiment of the present application further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by one or more processors, the one or more processors implement the optimization method of the gallium nitride power device driving circuit provided in the embodiment of the present application.

[0067] The computer-readable storage medium may be an internal storage unit of the terminal device 200 in the aforementioned embodiment, such as a hard disk or memory of the terminal device 200. The computer-readable storage medium may also be an external storage device of the terminal device 200, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. equipped with the terminal device 200.

[0068] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A method for optimizing a gallium nitride power device driving circuit, characterized in that: include: Constructing a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; Sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time; After controlling the virtual device to run for a preset time, obtaining a temperature distribution diagram of the virtual drive circuit; generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; Determining a target device distribution map based on each of the device distribution maps; The positions of the virtual devices of the virtual driving circuit are adjusted based on the target device distribution map.

2. The method for optimizing a gallium nitride power device driving circuit according to claim 1, characterized in that: The generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map comprises: For each virtual device of the virtual driving circuit, determining a temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area; Based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device in the topology diagram is adjusted to obtain multiple device distribution diagrams of the virtual drive circuit; wherein the topology diagram is a topology diagram of the virtual drive circuit.

3. The method for optimizing a gallium nitride power device driving circuit according to claim 2, characterized in that: The step of determining a temperature distribution region corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution region, includes: Determine that the area composed of pixels corresponding to the temperature distribution area of ​​the virtual device is the temperature distribution area corresponding to the virtual device; Respectively obtaining pixel temperatures corresponding to each pixel in the temperature distribution area, and arranging the pixel temperatures in sequence to obtain a pixel temperature sequence; Combining the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein the number of pixel temperatures in each of the pixel temperature combinations is different from each other; For each of the pixel temperature combinations, obtaining a standard deviation between pixels in the pixel temperature combination, and determining that the pixel temperature combination is an intermediate target pixel temperature combination when the standard deviation is less than a preset standard deviation; Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination; An average value of the pixel temperatures of the target pixel temperature combination is determined as the temperature of the virtual device.

4. The method for optimizing a gallium nitride power device driving circuit according to claim 1, characterized in that: The determining a target device distribution map based on each of the device distribution maps comprises: For each of the device distribution maps, adjusting each virtual device of the virtual driving circuit based on the device distribution map, and generating a target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method; A target device distribution map is determined based on a target performance stability index corresponding to each of the device distribution maps.

5. The method for optimizing a gallium nitride power device driving circuit according to claim 4, characterized in that: The method for generating the target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method includes: For each working condition of the target device, generating an initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition; The minimum initial performance stability index is determined as the target performance stability index.

6. The method for optimizing a gallium nitride power device driving circuit according to claim 5, characterized in that: The generating of the initial performance stability index of the virtual driving circuit under the working condition after adjustment includes: Sending a control instruction corresponding to the working condition to the adjusted virtual drive circuit, recording the response time of the virtual device, and after controlling the virtual device to run for a preset time, obtaining a target temperature distribution diagram of the adjusted virtual drive circuit; Determine the reciprocal of the response time as a response rate factor; generating a thermal management performance factor based on the target temperature profile; The initial performance stability index is generated based on the response rate factor and the thermal management performance factor.

7. The method for optimizing a gallium nitride power device driving circuit according to claim 6, characterized in that: The generating a thermal management performance factor based on the target temperature distribution map comprises: Respectively obtain the temperature value corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values; A maximum temperature value among the temperature values ​​and the standard deviation are weightedly summed to obtain a target value, and a reciprocal corresponding to the target value is determined as the thermal management performance factor.

8. The method for optimizing a gallium nitride power device driving circuit according to claim 6, characterized in that: The generating the initial performance stability index based on the response rate factor and the thermal management performance factor comprises: Determining whether the response rate factor is less than a preset response rate factor, and determining whether the thermal management performance factor is less than a preset thermal management performance factor; If the response rate factor is less than a preset response rate factor and / or the thermal management performance factor is less than a preset thermal management performance factor, determining that the initial performance stability index is 0; If the response rate factor is not less than a preset response rate factor and the thermal management performance factor is not less than a preset thermal management performance factor, the response rate factor and the thermal management performance factor are weightedly summed to obtain the initial performance stability index.

9. An optimization system for a gallium nitride power device driving circuit, characterized in that: A construction module, used to construct a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; A sending module, used for sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to run for a preset time; An acquisition module, configured to acquire a temperature distribution diagram of the virtual drive circuit after controlling the virtual device to run for a preset time period; A generating module, configured to generate a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; A determination module, configured to determine a target device distribution map based on each of the device distribution maps; The adjustment module is used to adjust the position of each virtual device of the virtual driving circuit based on the target device distribution map.

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