Three-dimensional heterogeneous integrated functional device for connector and manufacturing method thereof

Abstract

The invention discloses a three-dimensional heterogeneous integrated functional device for a connector and a manufacturing method thereof, the functional device comprises a shell, a combined element, a protection element and an adapter plate, the combined element is connected with the adapter plate, the protection element is arranged on the adapter plate, and the combined element, the protection element and the adapter plate are arranged in the shell. According to the three-dimensional heterogeneous integrated functional device, the thinned combined element and the connecting plate are used to form a laminated structure, so that miniaturization and functionality of a connector can be realized, and the integration level and performance of an electronic product are improved; through the thinning and stacking arrangement, the density of the bare chip and the resistance-capacitance element is increased, and the signal transmission efficiency is improved; the application of the plastic package layer and the integration of the flexible TVS element significantly enhance the lightning protection performance of the connector.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic connectors, and in particular relates to a three-dimensional heterogeneous integrated functional device for a connector and a manufacturing method thereof. Background Art

[0002] As electronic products develop towards thinness and high performance, connector technology is also constantly improving. Existing connectors have certain limitations in three-dimensional heterogeneous integration, multifunctionality, miniaturization, and lightning protection performance. Especially in the stacking integration of bare chips and resistors and capacitors, traditional connectors are difficult to meet the needs of high-density integration. In addition, the plastic sealing and laser sealing technology of the device also needs to be further optimized to improve the reliability and environmental adaptability of the connector.

[0003] The patent document with publication number CN115516725A discloses an overvoltage protection scheme for a connector port, but the scheme is used to provide overvoltage protection for circuits coupled to a connector port such as a USB-C port, and does not solve the technical problem of high-density integration. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a three-dimensional heterogeneous integrated functional device for a connector and a manufacturing method thereof.

[0005] The present invention is achieved through the following technical solutions.

[0006] The present invention provides a three-dimensional heterogeneous integrated functional device for a connector, comprising a housing, a combination element, a protection element and an adapter plate, wherein the combination element is connected to the adapter plate, the protection element is arranged on the adapter plate, and the combination element, the protection element and the adapter plate are arranged in the housing.

[0007] Preferably, the composite element comprises one of a bare chip and a resistor and capacitor element, the top surface and the bottom surface of the composite element are respectively connected to the adapter board through a connection layer, and the protection element is connected to the housing.

[0008] Preferably, the material of the connection layer includes one or more of gold, aluminum or copper, and the material of the shell is aluminum alloy.

[0009] Preferably, the adapter plates are stacked in a plurality of layers, and a filling layer is arranged between adjacent adapter plates, and the material of the filling layer includes one or more of epoxy resin, SiO2, SiN4, Al2O3 and AlN.

[0010] Preferably, the protection element is a TVS element.

[0011] A method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector comprises the following steps:

[0012] S1: Bake and dehumidify the bare chip or resistor and capacitor components, and then clean them;

[0013] S2: Assemble the bare chip and the resistor and capacitor components into the mold to fill and form a filling layer to obtain a plastic package;

[0014] S3: cutting the plastic package to obtain a combined component;

[0015] S4: preparing a connection layer on the combined component so that the combined component is connected to the adapter plate;

[0016] S5: Repeat the step of S4 according to the number of layers required to obtain a connection body between the combined component and the adapter plate;

[0017] S6: Place the connector into a housing containing a protective element, and then perform sealing welding to complete the preparation of the integrated functional device.

[0018] Preferably, the baking and dehumidification step in step S1 includes: placing the combined component in an oven, performing vacuuming and nitrogen filling operations in the oven for multiple cycles, and when the oven temperature drops below 40° C., filling nitrogen into the oven to make the interior of the oven reach atmospheric pressure.

[0019] Preferably, the filling step in step S2 includes: assembling the bare chip and the resistor and capacitor elements into the mold, and then evacuating the mold to make the filling material fall into the lower mold. After the loading is completed, filling and plastic sealing are performed at a pressure of 25 to 35T and an injection speed of 1.0 to 2 mm / s. After completion, the bare chip and the resistor and capacitor elements are post-cured at a post-curing temperature of 160 to 180°C and a post-curing time of 4 to 6 hours. After the post-curing is completed, the temperature is naturally reduced to room temperature before taking them out.

[0020] Preferably, in step S4, bonding is used to prepare the connection layer, and the steps include: first cleaning the pads on the bottom of the bare chip and the resistor and capacitor elements with plasma water, and then preparing bumps on the pad array, with a bonding ultrasonic power of 0.25 to 0.65 W, a bonding pressure of 10 to 50 g, and a bonding time of 20 to 60 ms.

[0021] Preferably, in step S6, laser welding is used for sealing at a pulse width of 3 to 11 ms.

[0022] The beneficial effects of the present invention are:

[0023] By using the thinned combined components and the connecting plate to form a laminated structure in the three-dimensional heterogeneous integrated functional device of the present invention, the miniaturization and functionality of the connector can be achieved, and the integration and performance of the electronic product are improved; the density of the bare chip and the resistor and capacitor components is increased by the thinning and stacking settings, and the signal transmission efficiency is improved; the application of the plastic sealing layer and the integration of the flexible TVS component significantly enhance the lightning protection performance of the connector. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the structure of the present invention;

[0025] In the figure: 1-housing, 2-combination element, 3-protection element, 4-adapter board. DETAILED DESCRIPTION

[0026] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.

[0027] Example:

[0028] like Figure 1 As shown, a three-dimensional heterogeneous integrated functional device for a connector includes a shell 1, a combination element 2, a protection element 3 and an adapter board 4, wherein the combination element 2 is connected to the adapter board 4 to realize inter-layer signal transmission, the protection element 3 is arranged on the adapter board 4, and the combination element 2, the protection element 3 and the adapter board 4 are arranged in the shell 1.

[0029] The composite component 2 includes one of a bare chip thinned to less than 100 μm and a resistor and capacitor component, the top and bottom surfaces of the composite component 2 are respectively connected to the adapter board 4 through a connection layer, and the protection component 3 is connected to the housing 1. The bare chip size can be 2×4 mm, and the resistor and capacitor component can be RC 0402 or RC 0201.

[0030] The combined component 2 is a three-dimensional structure formed by stacking, and is used to fix the bare chip and the resistor and capacitor components by means of glue bonding (divided into conductive or non-conductive resins), solder bonding (mainly lead-tin and other alloys), eutectic bonding, silver sintering bonding, etc., wherein the bare chip and the resistor and capacitor components are fixed on the substrate by the existing patch technology. The setting position of the bare chip and the resistor and capacitor components is designed according to specific needs.

[0031] The material of the connection layer includes one or more of gold, aluminum or copper, and the material of the housing 1 is aluminum alloy.

[0032] The adapter plates 4 are stacked in several pieces, and the adapter plates 4 can be fr4, ceramic, and a filling layer (plastic sealing layer) is arranged between adjacent adapter plates 4. The filling layer material includes one or more of epoxy resin, SiO2, SiN4, Al2O3 and AlN. The filling layer adopts the method of epoxy resin plus filler to improve the lightning protection performance and long-term stability. The filler is SiO2, SiN4, Al2O3 and AlN.

[0033] The protection element 3 is a SMDJ7.5CA flexible TVS element to enhance the lightning protection performance of the connector. The protection element 3 is connected to the housing 1 by bonding. The bonding material can use a silver-filled polymer to provide the required electrical interconnection for the epoxy resin with good conductive properties. Use a syringe or a syringe to apply the bonding material to the pad of the protection element 3 or the housing 1, then place the protection element 3 in the corresponding mounting position, apply a certain amount of pressure, and then perform a curing treatment. The curing temperature is 80-150°C and the curing time is 1-6 hours. The curing parameters are selected according to different models.

[0034] A method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector comprises the following steps:

[0035] S1: Bake and dehumidify the bare chip or resistor and capacitor components, and then clean them;

[0036] S2: Assemble the bare chip and the resistor and capacitor components into the mold to fill and form a filling layer to obtain a plastic package;

[0037] S3: cutting the plastic package to obtain a combined component 2;

[0038] S4: preparing a connection layer on the combined element 2 so that the combined element 2 is connected to the adapter plate 4;

[0039] S5: Repeat the step S4 according to the number of layers required to obtain a connection body of the combined element 2 and the adapter plate 4, which is a multi-layer stacked structure;

[0040] S6: placing the connector into the housing 1 equipped with the protection element 3, and then performing sealing welding to complete the preparation of the integrated functional device.

[0041] The baking and dehumidification step in step S1 includes: setting the baking temperature and time according to the temperature and air tightness requirements of the combined component 2, placing the combined component 2 in an oven, and performing vacuuming and nitrogen filling operations in the oven for multiple cycles. When the oven temperature drops below 40° C., nitrogen is filled into the oven to make the interior of the oven reach atmospheric pressure.

[0042] The filling step in step S2 includes: assembling the bare chip and the resistor and capacitor components into the mold, then evacuating the mold, taking out the epoxy molding cake in the constant temperature box and placing it in the barrel of the loading rack, placing the loading rack flat at a fixed position according to the positioning groove on the lower mold, so that the filling material falls into the injection molding barrel of the lower mold, and after the loading is completed, filling and molding are performed at a pressure of 25-35T and an injection speed of 1.0-2mm / s. After completion, the bare chip and the resistor and capacitor components are placed in an oven for post-curing, the post-curing temperature is 160-180°C, the post-curing time is 4-6h, and after the post-curing is completed, the temperature is naturally reduced to room temperature and then taken out for cutting to form an independent stacking structure to protect the internal circuit and provide lightning protection.

[0043] In the step S4, bonding is used to prepare the connection layer, and the steps include: first, the metal pads on the bottom of the bare chip and the resistor and capacitor are cleaned with plasma water, and then a ball welder is used to prepare micro bumps on the pad array, the micro bumps are made of gold or copper, the bonding ultrasonic power is 0.25-0.65W, the bonding pressure is 10-50g, and the bonding time is 20-60ms. The shear force of the micro bumps is tested by push-pull force, the morphology of the micro bumps is analyzed by an ultra-depth microscope, and the diameter of the micro bumps is measured, and the consistency of the micro bump height and the tail wire is controlled by the consistency of the bonding equipment parameters. The energy of the ultrasonic wave is used as the bonding energy to achieve close contact of the pure metal surface and form a firm metal bond.

[0044] In step S6, laser welding is used to perform sealing welding at a pulse width of 3 to 11 ms, wherein the pulse width for welding aluminum alloy materials is 3 to 9 ms, and the pulse width for welding silicon aluminum alloy materials is 8 to 11 ms. After welding, the weld appearance is observed under a microscope to determine whether it is uniform, whether cracks are generated, whether there are pits, and the location of the pits, and whether there are pores in the pits. Functional devices that have passed the appearance inspection are tested for air tightness.

Claims

1. A three-dimensional heterogeneous integrated functional device for a connector, characterized in that: The invention comprises a housing (1), a combination element (2), a protection element (3) and an adapter plate (4); the combination element (2) is connected to the adapter plate (4); the protection element (3) is arranged on the adapter plate (4); and the combination element (2), the protection element (3) and the adapter plate (4) are arranged in the housing (1).

2. A three-dimensional heterogeneous integrated functional device for a connector as claimed in claim 1, characterized in that: The combined element (2) comprises one of a bare chip and a resistor and capacitor element; the top surface and the bottom surface of the combined element (2) are respectively connected to the adapter board (4) via a connection layer; and the protection element (3) is connected to the housing (1).

3. A three-dimensional heterogeneous integrated functional device for a connector as claimed in claim 2, characterized in that: The material of the connection layer includes one or more of gold, aluminum or copper, and the material of the housing (1) is aluminum alloy.

4. A three-dimensional heterogeneous integrated functional device for a connector as claimed in claim 1, characterized in that: A plurality of adapter plates (4) are stacked, and a filling layer is arranged between adjacent adapter plates (4). The material of the filling layer includes one or more of epoxy resin, SiO2, SiN4, Al2O3 and AlN.

5. The three-dimensional heterogeneous integrated functional device for a connector according to claim 1, characterized in that: The protection element (3) is a TVS element.

6. A method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector according to any one of claims 1 to 5, characterized in that: The following steps are involved: S1: Bake and dehumidify the bare chip or resistor and capacitor components, and then clean them; S2: Assemble the bare chip and the resistor and capacitor components into the mold to fill and form a filling layer to obtain a plastic package; S3: cutting the plastic package to obtain a combined component (2); S4: preparing a connection layer on the combined element (2) so that the combined element (2) is connected to the adapter plate (4); S5: Repeat the step S4 according to the number of layers required to obtain a connection body of the combined element (2) and the adapter plate (4); S6: placing the connector into a housing (1) containing a protective element (3), and then performing sealing welding to complete the preparation of the integrated functional device.

7. The method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector according to claim 6, characterized in that: The baking and dehumidification step in step S1 comprises: placing the combined component (2) in an oven, performing vacuuming and nitrogen filling operations in the oven for multiple cycles, and when the oven temperature drops below 40° C., filling the oven with nitrogen to make the interior of the oven reach atmospheric pressure.

8. The method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector according to claim 6, characterized in that: The filling step in step S2 includes: assembling the bare chip and the resistor and capacitor components into the mold, and then evacuating the mold to make the filling material fall into the lower mold. After the loading is completed, the filling and plastic sealing are performed at a pressure of 25-35T and an injection speed of 1.0-2mm / s. After completion, the bare chip and the resistor and capacitor components are post-cured at a post-curing temperature of 160-180°C and a post-curing time of 4-6h. After the post-curing is completed, the bare chip and the resistor and capacitor components are taken out after the temperature naturally drops to room temperature.

9. The method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector according to claim 6, characterized in that: In step S4, bonding is used to prepare the connection layer, and the steps include: first, the pads on the bottom of the bare chip and the resistor and capacitor components are cleaned with plasma water, and then bumps are prepared on the pad array, the bonding ultrasonic power is 0.25-0.65W, the bonding pressure is 10-50g, and the bonding time is 20-60ms.

10. The method for manufacturing a three-dimensional heterogeneous integrated functional device for a connector according to claim 6, wherein in step S6, laser welding is used for sealing at a pulse width of 3 to 11 ms.

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