Plasma processing apparatus, power supply system, and frequency control method

Abstract

The plasma processing apparatus includes a chamber, a substrate support portion, a high-frequency power source, and a control portion. The substrate support portion is disposed within the chamber. The high-frequency power supply is configured so as to be able to supply high-frequency electric power to the generation source to generate plasma from the gas in the chamber. The control unit is configured so as to be able to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is individually supplied, in accordance with the generation source frequency when the generation source high-frequency electric power is individually supplied and the degree of reflection of the generation source high-frequency electric power previously, so as to suppress the degree of reflection of the generation source high-frequency electric power.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a plasma processing apparatus, a power supply system, and a frequency control method. Background Art

[0002] A plasma processing device is used for plasma processing of a substrate. The plasma processing device generates plasma from a gas in a chamber by supplying a generation source high-frequency electric power. The plasma processing device uses bias high-frequency electric power to attract ions from the plasma generated in the chamber to the substrate. Patent document 1 below discloses a plasma processing device that modulates the power level and frequency of the bias high-frequency electric power.

[0003] Previous technical literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2009-246091 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology for reducing the degree of reflection of a generation source high frequency electric power (ie, generation source high frequency electric power) when the generation source high frequency electric power is supplied alone.

[0008] Technical means for solving technical problems

[0009] In an exemplary embodiment, a plasma processing device is provided. The plasma processing device includes a chamber, a substrate support, a high-frequency power supply, and a control unit. The substrate support is disposed in the chamber. The high-frequency power supply is configured to supply a generation source high-frequency electric power to generate plasma from a gas in the chamber. The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone, based on the generation source frequency when the generation source high-frequency electric power is supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0010] Effects of the Invention

[0011] According to one exemplary embodiment, it is possible to reduce the degree of reflection of the generation source high frequency electric power in a state where the generation source high frequency electric power is supplied alone.

[0012] Through the attachment Figure 1 A more complete understanding of the invention and many of its advantages can be readily obtained by considering and referring to the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1This is a block diagram of a computer-based system that functions as a control unit that controls the processing executed in the embodiment of the present invention.

[0014] Figure 2 It is a diagram for explaining a configuration example of a plasma processing system.

[0015] Figure 3 It is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0016] Figure 4 is a timing chart of an example of a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 5 is a flow chart of a frequency control method according to an exemplary embodiment.

[0018] Figure 6 is a timing chart of an example of a plasma processing apparatus according to another exemplary embodiment.

[0019] Figure 7 is a timing chart of an example of a plasma processing apparatus according to still another exemplary embodiment.

[0020] Figure 8 is a timing chart of an example of a plasma processing apparatus according to still another exemplary embodiment.

[0021] Fig. 9 is a timing chart of an example of a plasma processing apparatus according to still another exemplary embodiment.

[0022] Fig.10 is a timing chart of an example of a plasma processing apparatus according to still another exemplary embodiment.

[0023] Fig.11 is a flow chart of a frequency control method according to another exemplary embodiment. DETAILED DESCRIPTION

[0024] Various exemplary embodiments are described below.

[0025] In an exemplary embodiment, a plasma processing device is provided. The plasma processing device includes a chamber, a substrate support, a high-frequency power supply, and a control unit. The substrate support is disposed in the chamber. The high-frequency power supply is configured to supply a generation source high-frequency electric power to generate plasma from a gas in the chamber. The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone according to the generation source frequency when the generation source high-frequency electric power is supplied alone before and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0026] According to one embodiment of the present invention, a new apparatus and method for generating plasma using pulsed high frequency (HF) RF and rapidly stabilizing the plasma are described.

[0027] In an exemplary embodiment of the present invention, the high frequency power supply supplies pulsed electric power under the control of the control unit to generate plasma.

[0028] In this specification, the elements and steps described in singular form should be understood as not excluding multiple elements and steps unless explicitly excluded. In addition, the "one embodiment" mentioned in the present invention does not mean that further embodiments with the described features are excluded.

[0029] The control method and control system described in this specification can be implemented using computer software, firmware, hardware, or a combination thereof or computer programming techniques or computer engineering techniques including subsets thereof. The technical effects thereof can at least include controlling the processing of substrates in a plasma processing device using pulsed high frequency (HF) RF when plasma is generated using a control device.

[0030] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0031] Figure 1 This is a block diagram of a computer (as a type of circuit) on which various control methods according to the embodiments of the present invention can be implemented.

[0032] The control method of the present invention can be implemented as a system, method and / or computer program product. The computer program product may include a computer-readable recording medium. The recording medium records computer-readable program instructions that cause one or more processors to execute the method of the embodiment.

[0033] A computer-readable recording medium may be a tangible device (device) capable of storing instructions used by an instruction execution device (processor). A computer-readable storage medium may be, for example, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of these devices, but is not limited thereto. In a list of more specific examples of computer-readable storage media, there are included floppy disks, hard disks, solid-state drives (SSDs), random access memories (RAMs), read-only memories (ROMs), erasable programmable read-only memories (EPROMs or flash memories), static random access memories (SRAMs), optical disks (CDs or CD-ROMs), digital versatile disks (DVDs), and memory cards or sticks, each (and their suitable combinations), which are not fully listed here. The computer-readable storage medium referred to in the present invention should not be interpreted as being a temporary signal in itself, such as an electric wave or other freely propagating electromagnetic wave, an electromagnetic wave propagating in a waveguide or other transmission medium (e.g., an optical pulse through an optical cable), or an electrical signal transmitted via a wire.

[0034] The computer-readable program instructions described in the present invention can be downloaded from a computer-readable storage medium to an appropriate computer device or processing device, or downloaded to an external computer or external storage device via a global network (internet), a local area network, a wide area network and / or a wireless network. The network may include copper transmission lines, optical communication fibers, wireless transmissions, routers, firewalls, switches, gateway computers and / or edge servers. Each network adapter card or network interface of a computer device or processing device can receive a computer-readable program instruction from a network, and transmit the computer-readable program instruction to a computer device or processing device in order to store the computer-readable program instruction in a computer-readable storage medium inside the computer device or processing device.

[0035] The computer-readable program instructions for performing the action of the present invention may include machine language instructions and / or microcode.Machine language instructions and / or microcode may be compiled or translated from a source code written by a combination of one or more programming languages ​​including assembly language, Basic, Fortran, Java (registered trademark), Python, R, C, C++, C# or the same programming language.Computer-readable program instructions may all be executed on a user's personal computer, notebook computer, tablet computer or smart phone, may also be executed on a remote computer or computer server, or may be executed on a combination of these computer devices.A remote computer or computer server may be connected to the user's device or multiple devices via a computer network such as a local area network, a wide area network or a global network (internet).In some embodiments, in order to perform the present invention, an electronic circuit including a programmable logic circuit, a field programmable gate array (FPGA) or a programmable logic array (PLA) etc. may execute a computer-readable program instruction so as to set or customize an electronic circuit using information from a computer-readable program instruction.

[0036] The method of the present invention is described with reference to the flowchart and block diagram of the method, device (system) and computer program product involved in the embodiment of the present invention. If it is a person skilled in the art, it can be understood that each frame and combination of frames in the flowchart and block diagram can be implemented by computer-readable program instructions.

[0037] Computer-readable program instructions capable of implementing the systems and methods described in the present invention can be provided to one or more processors (and / or one or more cores within the processor) of a general-purpose computer, a special-purpose computer, or other programmable device to give it mechanical functions, whereby the instructions are executed by the processor of the computer or other programmable device, thereby providing a system that implements the functions shown in the flowchart and block diagram of the present invention. These computer-readable program instructions can be stored in a computer-readable storage medium, so that the computer-readable storage medium storing the instructions becomes a manufactured product containing instructions for implementing the functions shown in the flowchart and block diagram of the present invention, thereby being able to instruct a computer, a programmable device, or other device to perform functions in a specific way.

[0038] Computer-readable program instructions can be read into a computer or other programmable device, and a series of action steps are executed by the computer or other programmable device, thereby realizing a computer implementation process. As a result, the instructions executed in a computer or other programmable device can implement the functions shown in the flowchart and block diagram of the present invention.

[0039] Figure 1 8 is a functional block diagram of a network system 800 including one or more network computers and servers. Figure 1The hardware environment and software environment shown can provide an exemplary platform for implementing the software and / or methods involved in the present invention.

[0040] refer to Figure 1 , the network system 800 may include a computer 805, a network 810, a remote computer 815, a website server 820, a cloud storage server 825, and a computer server 830, but is not limited thereto. In some embodiments, the network system 800 may be used Figure 1 Multiple instances of more than one functional block are shown.

[0041] Figure 1 805. The functional blocks shown in the computer 805 are provided only for the purpose of constructing exemplary functions and are not intended to limit the present invention. Although the details of the remote computer 815, the website server 820, the cloud storage server 825, and the computer server 830 are not shown, these other computers and devices may include similar functions to those shown in the computer 805.

[0042] Computer 805 may be a personal computer (PC), desktop computer, laptop computer, tablet computer, netbook computer, personal digital assistant (PDA), smart phone, or other programmable electronic device capable of communicating with other devices over network 810 .

[0043] The computer 805 may include a processor 835, a bus 837, a memory 840, a non-volatile storage device 845, a network interface 850, a peripheral interface 855, and a display interface 865. Each of these functions may be implemented as an independent electronic subsystem (an integrated circuit chip or a combination of a chip and related devices) in some embodiments, and in other embodiments, the combination of functions may be implemented on a single chip (sometimes referred to as a system-on-chip (SoC, system on a chip)).

[0044] The processor 835 may be one or more single-chip or multi-chip microprocessors designed and / or manufactured by Intel Corporation, Advanced Micro Devices Inc. (AMD), Arm Holdings (Arm), Apple Inc., etc. Examples of microprocessors include Intel's Celeron, Pentium (registered trademark), Core i3, Core i5, and Core i7, AMD's Opteron, Phenom, Athlon, Turion, and Ryzen, and ARM's Cortex-A, Cortex-R, and Cortex-M.

[0045] The bus 837 may also be a high-speed parallel interconnection bus or a serial interconnection bus that is an independent standard or an industrial standard such as ISA, PCI, PCI Express (PCI-e), or AGP.

[0046] The memory 840 and the non-volatile storage device 845 may be computer-readable storage media. The memory 840 may include a suitable volatile storage device such as a dynamic random access memory (DRAM), a static random access memory (SRAM), etc. The non-volatile storage device 845 may include one or more of a floppy disk, a hard disk, a solid-state drive (SSD), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical disk (CD or CD-ROM), a digital versatile disk (DVD), and a memory card or a memory stick.

[0047] Program 848 may be a collection of machine-readable instructions and / or data stored in non-volatile storage device 845 for creating, managing, and controlling software functions as described and illustrated in other details herein. In some embodiments, memory 840 may be much faster than non-volatile storage device 845. In such embodiments, program 848 may be transferred from non-volatile storage device 845 to memory 840 prior to execution by processor 835.

[0048] Computer 805 can communicate with other computers via network 810 through network interface 850. Network 810 can be, for example, a local area network (LAN), a wide area network (WAN) such as the Internet, or a combination of the two, and can also include wired, wireless, or fiber-based connections. In general, network 810 can be any combination of connections or protocols that support communication between two or more computers or related devices.

[0049] The peripheral interface 855 can perform data input and output with other devices that are locally connected to the computer 805. The peripheral interface 855 can, for example, provide a connection with an external device 860. The external device 860 can include devices such as a keyboard, a mouse, a keypad, a touch screen and / or other appropriate input devices. The external device 860 can also include portable computer-readable storage media such as a thumb drive (U disk), a portable optical disk, a portable disk and a memory card. Software and data such as a program 848 for performing an embodiment of the present invention can be stored in a portable computer-readable storage medium. In such an embodiment, the software can be read into the non-volatile storage device 845, or it can also be directly read into the memory 840 via the peripheral interface 855. The peripheral interface 855 can be connected to the external device 860 using RS-232 or a universal serial bus (USB) as an industry standard connection.

[0050] The display interface 865 can connect the computer 805 to a display 870. In some embodiments, the display 870 can be used to display a command line or a graphical user interface to a user of the computer 805. The display interface 865 can be connected to the display 870 using one or more proprietary or industry-standard connections such as VGA, DVI, DisplayPort, and HDMI (registered trademark).

[0051] As described above, the network interface 850 provides communication with other computer systems / devices and storage systems / devices external to the computer 805. The software programs and data described in this specification can be downloaded to the non-volatile storage device 845 from the remote computer 815, the website server 820, the cloud storage server 825, and the computer server 830 via the network interface 850 and the network 810. In addition, the systems and methods described in the present invention can also be executed by one or more computers connected to the computer 805 via the network interface 850 and the network 810. For example, in some embodiments, the systems and methods of the present invention can be executed by a remote computer 815, a computer server 830, or a combination of interconnected computers on the network 810.

[0052] The data, data sets and / or databases used in the embodiments of the systems and methods described herein may be stored in or downloaded from the remote computer 815, the website server 820, the cloud storage server 825 and the computer server 830.

[0053] The circuit used in this application can be defined as one or more of an electronic component (semiconductor element, etc.), a plurality of components directly connected to each other or connected to each other by electronic communication, a computer, a network of computer devices, a remote computer, a website server, a cloud storage server, and a computer server. For example, one or more of a computer, a remote computer, a website server, a cloud storage server, and a computer server can each be included in a circuit, or can include a circuit as its component. In some embodiments, multiple examples of one or more of these components can be used, in which case each of multiple examples of one or more of these components can be included in the circuit, or the circuit can be included in these. In some embodiments, a circuit represented by a network system may include a serverless computer system corresponding to a virtual group of multiple hardware resources. A circuit represented by a computer may include a personal computer (PC), a desktop computer, a laptop, a tablet computer, a netbook computer, a personal digital assistant (PDA), a smart phone, and other programmable devices that can communicate with other devices on a network. The circuit may be a general-purpose computer, a special-purpose computer, or other programmable devices recorded in this specification having one or more processors. Each processor may be a single-chip or multi-chip microprocessor of one or more. The processor is regarded as a processing circuit or circuit because it has transistors and other circuits. The circuit can implement the system and method of the present invention according to computer-readable program instructions provided to give mechanical functions to one or more processors (and / or one or more cores in the processor) of one or more general-purpose computers, special-purpose computers, or other programmable devices described in this specification, whereby the instructions are executed by one or more processors of a programmable device contained in or including the circuit, thereby providing a system for implementing the functions identified in the flowchart and block diagram of the present invention. Alternatively, the circuit can be a pre-programmed structure such as a programmable logic device, a dedicated integrated circuit, etc., which is considered a circuit whether used alone or in combination with other programmable or pre-programmed circuits.

[0054] Figure 2: is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generating unit 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support unit 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0055] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP; Capacitively Coupled Plasma), inductively coupled plasma (ICP; Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-resonance plasma, electron cyclotron resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), or surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including AC (Alternating Current: Alternating Current) plasma generating units and DC (Direct Current: Direct Current) plasma generating units may be used.

[0056] The control unit 2 processes computer executable instructions that cause the plasma processing device 1 to perform various steps described in the present invention. The control unit 2 can be configured to control various elements of the plasma processing device 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include, for example, a computer 2a. The computer 2a can include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to perform various control actions according to the program stored in the storage unit 2a2. The storage unit 2a2 can include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can also communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0057] Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. Figure 3 It is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0058] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the top (ceiling) of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The side wall 10a is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0059] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has: a central area (substrate support surface) 111a for supporting a substrate (wafer) W; and an annular area (ring support surface) 111b for supporting the ring assembly 112. When viewed from above, the annular area 111b of the main body 111 surrounds the central area 111a of the main body 111. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner that surrounds the substrate W on the central area 111a of the main body 111. In one embodiment, the main body 111 includes a base 111e and an electrostatic chuck 111c. The base 111e includes a conductive component. The conductive component of the base 111e acts as a lower electrode. The electrostatic chuck 111c is arranged on the base 111e. The upper surface of the electrostatic chuck 111c has a substrate supporting surface 111a. The ring assembly 112 includes one or more annular components. At least one of the one or more annular components is an edge ring. In addition, the substrate supporting portion 11 may include a temperature regulating module, which is configured to be able to adjust at least one of the electrostatic chuck 111c, the ring assembly 112 and the substrate W to a target temperature, which is omitted from the figure. The temperature regulating module may include a heater, a heat transfer medium, a flow path or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. In addition, the substrate supporting portion 11 may also include a heat transfer gas supply portion, which is configured to be able to supply heat transfer gas between the back side of the substrate W and the substrate supporting surface 111a.

[0060] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas inlet ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes a conductive component. The conductive component of the shower head 13 functions as an upper electrode. In addition, in addition to the shower head 13, the gas inlet part may also include one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0061] The gas supply unit 20 may include one or more gas sources 21 and at least one or more flow controllers 22. In one embodiment, the gas supply unit 20 is configured to supply one or more processing gases from the respective corresponding gas sources 21 to the shower head 13 via the respective corresponding flow controllers 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsing the flow of the one or more processing gases.

[0062] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0063] The plasma processing apparatus 1 further includes a power supply system 30. The power supply system 30 includes a high frequency power supply 31 and a control unit 30c. The power supply system 30 may further include a bias power supply 32. The power supply system 30 may further include one or more sensors 31s.

[0064] The high frequency power source 31 is configured to generate a generation source high frequency electric power HF to generate plasma in the chamber (plasma processing chamber 10). The generation source high frequency electric power HF has a generation source frequency f S . Generating source frequency f S For example, the frequency is within the range of 13 MHz to 200 MHz. S The frequency may be set to 27 MHz, 40.68 MHz, 60 MHz, or 100 MHz. The power level of the generation source high frequency electric power HF is, for example, 500 W or more and 20 kW or less.

[0065] In one embodiment, the high-frequency power supply 31 may include a high-frequency signal generator 31g and an amplifier 31a. The high-frequency signal generator 31g generates a high-frequency signal. The amplifier 31a generates a source high-frequency electric power HF by amplifying the high-frequency signal input from the high-frequency signal generator 31g, and outputs the source high-frequency electric power HF. In addition, the high-frequency signal generator 31g may be composed of a programmable processor or a programmable logic device such as an FPGA. In addition, a D / A converter may be connected between the high-frequency signal generator 31g and the amplifier 31a.

[0066] The high-frequency power supply 31 is connected to the high-frequency electrode via a matcher 31m. The base 111e constitutes the high-frequency electrode in one embodiment. In another embodiment, the high-frequency electrode may be an electrode disposed in the electrostatic chuck 111c. The high-frequency electrode may be an electrode shared with the bias electrode described later. Alternatively, the high-frequency electrode may be an upper electrode. The matcher 31m includes a matching circuit. The matching circuit of the matcher 31m has a variable impedance. The matching circuit of the matcher 31m is controlled by the control unit 30c. The impedance of the matching circuit of the matcher 31m is adjusted so that the impedance of the load side of the high-frequency power supply 31 matches the output impedance of the high-frequency power supply 31.

[0067] One or more sensors 31s may be connected between the high-frequency power supply 31 and the matching device 31m. One or more sensors 31s may be connected between the matching device 31m and the high-frequency electrode. For example, one or more sensors 31s may be connected between a junction point and a bias electrode, and the junction point is a junction point of an electrical path extending from the matching device 31m to the bias electrode and an electrical path extending from a matching device 32m described later to the bias electrode. Alternatively, one or more sensors 31s may be connected between the junction point and the matching device 31m. In addition, one or more sensors 31s may be sensors separated from the matching device 31m, or may be a part of the matching device 31m.

[0068] The one or more sensors 31s may include a directional coupler configured to detect the power level of the reflected wave of the generated high frequency electric power HF returned from the load of the high frequency power source 31 and notify the control unit 30c of the detected reflected wave power level.

[0069] Furthermore, the one or more sensors 31s may include a VI sensor. The VI sensor is configured to detect a voltage V of the source high frequency electric power. HF and current I HF , and according to the voltage V HF and current I HF To determine the impedance Z on the load side of the high frequency power supply 31 L The VI sensor can be configured to determine the voltage V HF With current I HF The phase difference between them.

[0070] The bias power supply 32 is electrically connected to the bias electrode. In one embodiment, the base 111e constitutes the bias electrode. In another embodiment, the bias electrode can be an electrode provided in the electrostatic chuck 111c. The bias power supply 32 is configured to be able to apply an electrical bias EB (or bias energy) to the bias electrode. The bias power supply 32 can be configured to be able to apply a pulse of the electrical bias EB to the bias electrode. In this case, the bias power supply 32 can determine the timing of each of the plurality of pulses according to a signal applied from the pulse controller 34. In addition, the control unit 2 can function as a pulse controller 34.

[0071] The electrical bias EB has a waveform period. That is, the electrical bias EB is periodically applied to the bias electrode at a time interval of the waveform period. The waveform period of the electrical bias EB is the shortest period of the waveform of the electrical bias EB, and has a time length of the inverse of the bias frequency of the electrical bias EB. The bias frequency may be less than the generating source frequency. The bias frequency may be greater than 100kHz and less than 28MHz, for example, 400kHz or 3.2MHz.

[0072] In one embodiment, the electric bias EB may be a bias high frequency electric power having a bias frequency. In this case, the bias power supply 32 is connected to the bias electrode via a matcher 32m. The matcher 32m includes a matching circuit. The matching circuit of the matcher 32m has a variable impedance. The matching circuit of the matcher 32m is controlled by the control unit 30c. The impedance of the matching circuit of the matcher 32m is adjusted to match the impedance of the load side of the bias power supply 32 with the output impedance of the bias power supply 32. In addition, the power level of the bias high frequency electric power may be 500W or more and 50kW or less.

[0073] In another embodiment, the electrical bias EB may include a pulse of a voltage periodically applied to the bias electrode at a time interval of the waveform period. The voltage pulse may be a pulse of a negative voltage or a pulse of a negative DC voltage (a pulse generated by generating a waveform of a negative DC voltage), or may be a pulse of other voltages. The voltage pulse may have a waveform such as a triangular wave or a rectangular wave. The voltage pulse may have any other pulse waveform. When a voltage pulse is used as the electrical bias EB, the plasma processing device 1 does not include a matcher 32m.

[0074] The bias power supply 32 may include a signal generator 32g and an amplifier 32a. The signal generator 32g generates a signal for generating an electrical bias EB. The amplifier 32a generates the electrical bias EB by amplifying the signal input from the signal generator 32g, and supplies the generated electrical bias EB to the bias electrode. In addition, the signal generator 32g may be composed of a programmable logic device such as a programmable processor or FPGA. In addition, a D / A converter may be connected between the signal generator 32g and the amplifier 32a.

[0075] The bias power supply 32 is synchronized with the high frequency power supply 31. Therefore, the synchronization signal used may be applied from the bias power supply 32 to the high frequency power supply 31. Alternatively, the synchronization signal may be applied from the high frequency power supply 31 to the bias power supply 32. Alternatively, the synchronization signal may be applied from another device such as the control unit 30c to the high frequency power supply 31 and the bias power supply 32.

[0076] The control unit 30c is configured to be able to control the high-frequency power supply 31. The control unit 30c can be composed of a processor such as a CPU. The control unit 30c can be a part of the matching device 31m, a part of the high-frequency power supply 31, or a control unit provided separately from the matching device 31m and the high-frequency power supply 31. Alternatively, the control unit 2 can also serve as the control unit 30c.

[0077] In various embodiments, the control unit 30c sets a period P during which the generation source high frequency electric power HF is supplied alone in order to generate plasma in the chamber 10. HO (During single supply) Generation source frequency f S , so as to suppress the reflection degree of the high frequency electric power HF generated by the generating source. The control unit 30c controls the period P HO The frequency of the source at each time point is f S , according to the source frequency f when the source high frequency electric power HF is supplied alone S The reflection degree of the high frequency electric power HF of the generating source is set to suppress the reflection degree of the high frequency electric power HF of the generating source. HO This is a period during which the electric bias EB is not supplied and only the generation source high-frequency electric power HF is supplied.

[0078] In various embodiments, the degree of reflection can be obtained as the power level of the reflected wave of the generating source high-frequency electric power HF. The degree of reflection can be obtained as the value of the ratio of the power level of the reflected wave of the generating source high-frequency electric power HF to the power level of the traveling wave of the generating source high-frequency electric power HF or the set output power level of the generating source high-frequency electric power HF. Alternatively, the degree of reflection can be obtained as the impedance Z of the power supply line of the generating source high-frequency electric power HF that supplies power to the high-frequency electrode L The degree of reflection can be obtained as the deviation from the characteristic impedance (e.g. 50Ω). Alternatively, the degree of reflection can also be obtained as a voltage VHF With current I HF Alternatively, the degree of reflection can be taken as an expression of the source frequency f S In either case, the degree of reflection can be obtained by one or more sensors 31s, or determined based on measurements obtained by one or more sensors 31s.

[0079] Below, for the period P HO The source frequency f S Various implementations of the setting (or change) are described.

[0080] [First embodiment]

[0081] Figure 4 is a timing chart of an example of a plasma processing apparatus according to an exemplary embodiment. Figure 4 The generation source high frequency electric power HF, the frequency setting method and the generation source frequency f in the first embodiment are shown. S Timing diagram of Figure 4 In the description, "ON" of the generating source high frequency electric power HF indicates that the generating source high frequency electric power HF is being supplied, and "OFF" of the generating source high frequency electric power HF indicates that the generating source high frequency electric power HF is being stopped. Figure 4 In the frequency setting mode, the source frequency f is generated. S In the first embodiment, the frequency setting method includes a successive feedback process FSB. In the first embodiment, the frequency setting method may also include a start-up process FSA.

[0082] In the first embodiment, the high frequency electric power HF is supplied to generate plasma, but the electric bias EB is not used. In the first embodiment, the plasma processing apparatus 1 may not include the bias power supply 32 and the matching unit 32 m. Furthermore, the plasma processing apparatus 1 may not include the pulse controller 34 .

[0083] In the first embodiment, as Figure 4 As shown, the high frequency power supply 31 is in the period P HO The high frequency power source 31 starts supplying the high frequency electric power HF at the start time of P. HO That is, in the first embodiment, the high frequency power source 31 continuously supplies the generated high frequency electric power HF during the period P. HO The supply generates a continuous wave of high frequency electric power HF.

[0084] In the first embodiment, the period P HO It includes a plurality of sub-periods SP, namely, I sub-periods SP1, SP2, ..., SPI . Multiple sub-periods SP1, SP2, ..., SP I The period P HO During the period P B The sub-periods SP are divided into one sub-period. The time lengths of the plurality of sub-periods SP may be the same as or different from each other. The time length of the plurality of sub-periods SP may be greater than or equal to 10 nanoseconds and less than or equal to 10 microseconds.

[0085] Period P HO It may further include a startup period P before a plurality of sub-periods SP. S During startup P S The high frequency power supply 31 can include a plasma ignition period. S At the start time of P, the supply of the source high frequency electric power HF begins. B It can be the next startup period P S during the period.

[0086] like Figure 4 As shown, the control unit 30c is in the startup period P S Specifically, the control unit 30c performs the startup process FSA during the startup period P S From the beginning to the end of the period, the source frequency f is generated according to the initial frequency group S The initial frequency group is prepared in advance and stored in a storage unit accessible to the control unit 30c. The initial frequency group can be obtained through experiments or determined based on past processing results.

[0087] During startup P S After that period P B Specifically, the control unit 30c performs the successive feedback processing FSB. i The generation source frequency f of each of the earlier one or more sub-periods S The i-th sub-period SP is set according to the reflection degree of the high-frequency electric power HF generated by the source. i The source frequency f S [i], to suppress the sub-period SP i The degree of reflection of the high-frequency electric power HF generated by the source.

[0088] In one embodiment, the sub-period SP i The previous one or more sub-periods may include the sub-period SP i-v (1st sub-period) and sub-period SP i-u(Second sub-period). Here, v and u are integers greater than 1, and v is greater than u. v can be 2, and u can be 1. In addition, when the time length of each of the plurality of sub-periods SP is short, in order to reduce the calculation load, u can be greater than 20. For example, when the time length of each of the plurality of sub-periods SP is 50 nanoseconds, the sub-period SP i Sub-period SP i-u The period after 1μ seconds.

[0089] In the successive feedback process FSB, the control unit 30c can i-v The source frequency f S [iv] To the sub-period SP i-u The source frequency f S [iu] changes and SP from vice period i-v The reflection degree of the high frequency electric power HF generated by the generation source to the secondary period SP i-u The generation source frequency f is set by changing the reflection degree of the high frequency electric power HF generated by the S [i], to suppress the sub-period SP i The degree of reflection of the high-frequency electric power HF generated by the source.

[0090] For example, if from the sub-period SP i-v The reflection degree of the high frequency electric power HF generated by the generation source to the secondary period SP i-u If the reflection degree of the high frequency electric power HF of the generating source changes to a decrease in the reflection degree, the control unit 30c controls the generating source frequency f S [iu] is assigned with the frequency f generated from the source S [iv] To generate source frequency f S The frequency obtained by changing in the same direction as the direction of change of [iu] is set as the source frequency f S [i] If from the sub-period SP i-v The reflection degree of the high frequency electric power HF generated by the generation source to the secondary period SP i-u If the reflection degree of the high frequency electric power HF of the generating source changes to increase, the control unit 30c controls the generating source frequency f S [iu] is assigned with the frequency f generated from the source S [iv] To generate source frequency f S The frequency obtained by changing in the direction opposite to the direction of change of [iu] is set as the source frequency f S [i].

[0091] According to the first embodiment, the reflection degree of the generation source high frequency electric power HF is reduced during the period of supplying the generation source high frequency electric power HF independently and continuously. Furthermore, according to the first embodiment, the startup until the plasma is stabilized can be accelerated. Furthermore, according to the first embodiment, the abnormal discharge of the plasma can be suppressed. Furthermore, according to the first embodiment, since the generation source frequency f S By adjusting the variable capacitor 31m to suppress reflection, the operation of the variable capacitor of the matching device 31m can be reduced, and the life of the variable capacitor can be increased.

[0092] Here, reference Figure 5 . Figure 5 is a flow chart of a frequency control method according to an exemplary embodiment. Figure 5 The frequency control method shown (hereinafter referred to as "method MTA") can be performed in a state where a substrate W is placed on a substrate support 11 in a chamber 10. In the method MTA, a plasma treatment can be performed on the substrate W. The plasma treatment of the method MTA may include plasma etching of the substrate W.

[0093] The method MTA starts at step STAa. In step STAa, in order to generate plasma from gas in the chamber 10, the high frequency power HF is supplied from the high frequency power supply 31. In the first embodiment, the high frequency power HF is supplied continuously. That is, a continuous wave of the high frequency power HF is supplied.

[0094] The method MTA may further comprise a step STAb. Step STAb during startup P S In step STAb, the above-mentioned startup process FSA is performed in association with the first embodiment.

[0095] In step STAc, the above-mentioned successive feedback processing FSB is performed in association with the first embodiment. That is, in step STAc, the generation source frequency f when the generation source high frequency electric power HF is supplied alone is S According to the previous generation source frequency f when the generation source high frequency electric power HF is supplied alone S and the degree of reflection of the generating source high frequency electric power HF to suppress the degree of reflection of the generating source high frequency electric power HF.

[0096] [Second embodiment]

[0097] Figure 6 is a timing chart of an example of a plasma processing apparatus according to another exemplary embodiment. Figure 6 The generation source high frequency electric power HF, the electric bias EB, the frequency setting method, and the generation source frequency f in the second embodiment are shown. S and the timing diagram of the reflection degree RD. Figure 6In the example, "HIGH" of the generating source high frequency electric power HF indicates that the power level of the generating source high frequency electric power HF is higher than the power level of the generating source high frequency electric power HF indicated by "LOW". Figure 6 In the description, "OFF" of the generating source high frequency electric power HF means stopping the supply of the generating source high frequency electric power HF. Figure 6 In the example, "ON" of the electric bias EB indicates that the electric bias EB is supplied, and "OFF" of the electric bias EB indicates that the supply of the electric bias EB is stopped. Figure 6 In the frequency setting mode, the source frequency f is generated. S In the second embodiment, the frequency setting method includes a start-up process FSA, a successive feedback process FSB and an inter-pulse feedback process FSC.

[0098] In the second embodiment, the high frequency power source 31 is configured to be able to supply the generated high frequency electric power HF during one of two periods in each of a plurality of pulse cycles PC (i.e., pulse cycles PC1, PC2, ...). The plurality of pulse cycles PC appear in sequence. Each of the plurality of pulse cycles PC includes a period P BO and P HO . During P HO is one of the two periods in each of the plurality of pulse cycles PC, and the period P BO For another period.

[0099] In the second embodiment, the high frequency power source 31 is in a period P in each of the plurality of pulse periods PC. HO The high-frequency electric power HF of the generating source is supplied, the power level of which is indicated by "LOW". BO The high-frequency electric power HF of the generating source whose power level is indicated by "HIGH" is supplied. That is, the period P in each of the plurality of pulse cycles PC HO The power level of the high frequency electric power HF generated by the source is lower than the period P in each of the plurality of pulse cycles PC. BO The power level of the high frequency electric power HF generated by the generator. In addition, the period P in each of the plurality of pulse cycles PC HO The power level of the high frequency electric power HF generated by the source can be higher than the period P in each of the plurality of pulse cycles PC. BO The power level of the generating source of high frequency electrical power HF.

[0100] In the second embodiment, the bias power supply 32 is in the period P HO The supply of the electric bias EB to the substrate support portion 11 is stopped. BO An electric bias EB is supplied to the substrate support portion 11. That is, during the period P HOThis is a separate supply period in which the electric bias EB is not supplied but the generation source high frequency electric power HF is supplied alone.

[0101] Period P HO That is, the single supply period includes the start-up period P S During the startup period, P S Including period P HO The start time point of the startup period P S The ignition period of the plasma may be included. HO It may also include the period P B During startup P S Is the period P B The period before. Period P B It can be the next startup period P S during the period.

[0102] like Figure 6 As shown, the control unit 30c controls the start-up period P in each of at least one continuous pulse period including at least the first (initial) pulse period PC1 among the plurality of pulse periods PC. S Specifically, the control unit 30c performs the startup process FSA during the startup period P S From the beginning to the end of the period, the source frequency f is generated according to the initial frequency group S The initial frequency group is prepared in advance and stored in a storage unit accessible to the control unit 30c. The initial frequency group can be obtained through experiments or determined based on past processing results. In addition, the number of one or more consecutive pulse periods including the initial pulse period PC1 can be greater than 2 and less than 20.

[0103] During the start-up period P of each pulse cycle PC after one or more consecutive pulse cycles including the initial pulse cycle PC1, S , the control unit 30c performs the pulse-to-pulse feedback processing FSC. Specifically, the control unit 30c controls the pulse period PC n During the startup period P S The frequency of the source of each phase within S , according to the pulse period PC n-q The same phase of the generated source frequency f S Pulse period PC n-p The same phase of the generated source frequency f S The change of pulse period PC n-q The degree of reflection of the high frequency electric power HF generated by the same phase as the pulse period PC n-p The reflection degree of the high frequency electric power HF generated by the same phase within the pulse cycle PC is set to suppress the change nThe degree of reflection of the high frequency electric power HF generated by the same phase within the pulse period PC n The phase is based on the pulse period PC n The pulse period PC is determined by the time elapsed from the start time point n Therefore, the same phase in multiple pulse cycles is the time point with the same elapsed time from the start time point of the corresponding pulse cycle. In addition, the pulse cycle PC n , pulse period PC n-q , pulse period PC n-p The nth pulse period, the (nq)th pulse period, and the (np)th pulse period in the plurality of pulse periods PC. q and p are integers greater than 1, and q is greater than p. For example, q is 2 and p is 1.

[0104] Here, the pulse period PC n During the startup period P S The phase inside is denoted as phase α m Phase α m From the start-up period P S The phase after m hours from the start time point. In one example, if the pulse period PC n-q During the startup period P S Phase α m The degree of reflection of the high frequency electric power HF generated by the source at the pulse period PC n-p During the startup period P S Phase α m If the reflection degree of the high frequency electric power HF of the generating source changes to a decrease, the control unit 30c controls the generating source frequency f S [nq, α m ] is given by generating source frequency f S [np, α m ] to generate source frequency f S [np, α m The frequency obtained by changing the direction of the change in the same direction as the direction of the change is set as the source frequency f S [n, α m ]. In addition, the source frequency f S [n, α m ] is the pulse period PC n During the startup period P S Phase α m The source frequency f at S If the pulse period PC n-q During the startup period P S Phase α m The degree of reflection of the high frequency electric power HF generated by the source at the pulse period PCn-p During the startup period P S Phase α m If the reflection degree of the high frequency electric power HF at the generating source changes to increase, the control unit 30c controls the generating source frequency f S [np, α m ] is given by generating source frequency f S [nq, α m ] to generate source frequency f S [np, α m The frequency obtained by changing in the direction opposite to the direction of change is set as the source frequency f S [n, α m ].

[0105] In the second embodiment, the control unit 30c may control the period P in each of the plurality of pulse cycles PC. B The above-mentioned successive feedback processing FSB is performed within 10 seconds. B During the period P HO Or, during the period P B During startup, P S Starts when the change in reflection level becomes less than the specified value.

[0106] In the second embodiment, the start-up period P in each of one or more consecutive pulse periods including the first pulse period PC1 is S The length of time and the start-up period P in each pulse cycle after the one or more continuous pulse cycles S The time lengths may be the same or different.

[0107] In addition, in a modified example of the second embodiment, the control unit 30c may control the pulse period P in each of the plurality of pulse cycles. HO , first perform the startup process FSA, then perform the pulse-to-pulse feedback process FSC, and then perform the successive feedback process FSB. Or, Figure 7 As shown, the control unit 30c may also be configured to control the period P in each of the plurality of pulse cycles PC. HO , only the pulse-to-pulse feedback processing FSC is performed. In this case, at least the first and second pulse periods in the plurality of pulse periods PC are each in the period P HO The frequency f of the source from the start time point to the end time point S , can be changed according to other initial frequency groups.

[0108] Furthermore, in the second embodiment, the period P in each of the plurality of pulse cycles PC may be HOis divided into a plurality of sub-periods, each of which is a period P HO The above-mentioned pulse-to-pulse feedback processing FSC is applied to each phase within the plurality of sub-periods. The time length of each of the plurality of sub-periods is, for example, not less than 10 nanoseconds and not more than 10 microseconds. In addition, in each of the plurality of sub-periods, a source frequency f is generated. S It can be set to a single frequency or multiple frequencies.

[0109] Furthermore, in the second embodiment, the period P in each of the plurality of pulse cycles PC is HO The power level of the generated high frequency electric power HF can be during the period P HO In this case, the period P HO The generation source high frequency electric power HF is divided into a plurality of divided periods at each power level, and a start-up process FSA, an inter-pulse feedback process FSC and a successive feedback process FSB are performed in each of the plurality of divided periods.

[0110] Below, reference Figure 8 , another variation of the second embodiment is described. Figure 8 As shown, in another variation of the second embodiment, the period P in each of the plurality of pulse cycles PC is HO The power level of the high frequency electric power HF generated by the source is during the period P HO For example, the period P in each of the multiple pulse cycles PC HO It may include: one or more periods in which the power level of the generating source high-frequency electric power HF has a level indicated by "LOW"; and one or more periods in which the power level has a level indicated by "OFF". The level indicated by "LOW" is lower than the level indicated by "HIGH". The level indicated by "OFF" is zero. That is, during the period in which the power level has a level indicated by "OFF", the supply of the generating source high-frequency electric power HF is stopped. Figure 8 In the example shown, during the period P in each of the plurality of pulse cycles PC HO The period including the start time point (period P S ) and the end time point, the generating source high-frequency electric power having a level represented by "LOW" is supplied, and the supply of the generating source high-frequency electric power HF is stopped during the period between these two periods.

[0111] In such Figure 8 In another modified example of the second embodiment shown in FIG. 1 , during each period P of a plurality of pulse cycles PC, HO , it is also possible to perform only the inter-pulse feedback processing FSC. Also, it is also possible that during each of the plurality of pulse cycles PC, HO The startup process FSA is performed during the period including the start time point.HO In the other periods within the pulse period, only the pulse-to-pulse feedback processing FSC is performed. In this case, it can also be that the period P in at least the first and second pulse periods of the plurality of pulse periods PC is HO The source frequency f from the start time point to the end time point S , which changes according to the other initial frequency groups.

[0112] According to the second embodiment, during the period P during which the generation source high frequency electric power HF is supplied alone, HO , reducing the reflection degree of the high frequency electric power HF of the generating source. Furthermore, according to the second embodiment, the startup before the plasma is stabilized can be accelerated. Furthermore, according to the second embodiment, the abnormal discharge of the plasma can be suppressed. Furthermore, according to the second embodiment, the reproducibility of the effective power level (load power level) of the high frequency electric power HF of the generating source can be improved. For example, during the period P HO When the power level of the high frequency electric power HF of the generating source is changed to a plurality of power levels, the reproducibility of the effective power level (load power level) corresponding to each power level can be improved. S By adjusting the variable capacitor 31m to suppress reflection, the operation of the variable capacitor of the matching device 31m can be reduced, and the life of the variable capacitor can be increased.

[0113] [Third embodiment]

[0114] Below, reference Fig. 9 , for the frequency of the generating source f S The third embodiment of the setting (or change) is described. Fig. 9 is a timing chart of an example of a plasma processing apparatus according to still another exemplary embodiment. Fig. 9 The generation source high frequency electric power HF, the electric bias EB, the frequency setting method, and the generation source frequency f in the third embodiment are shown. S and the timing diagram of the reflection degree RD. Fig. 9 In the above, "ON" of the generating source high frequency electric power HF indicates that the generating source high frequency electric power HF is supplied, and "OFF" of the generating source high frequency electric power HF indicates that the generating source high frequency electric power HF is stopped from being supplied. Fig. 9 In the figure, "ON" of the electric bias EB indicates that the electric bias EB is supplied, and "OFF" of the electric bias EB indicates that the supply of the electric bias EB is stopped. Fig. 9 In the frequency setting mode, the source frequency f is generated. S In the third embodiment, the frequency setting method includes a start-up process FSA, a successive feedback process FSB, and an inter-pulse feedback process FSC. The third embodiment will be described below from the perspective of the differences between the second embodiment and the third embodiment.

[0115] In the third embodiment, similarly to the second embodiment, the high frequency power source 31 is in the period P HO On the other hand, in the third embodiment, unlike the second embodiment, the high frequency power source 31 is in the period P BO Stopping the supply of the generation source high frequency electric power HF. That is, in the third embodiment, the high frequency power source 31 stops supplying the generation source high frequency electric power HF while supplying the electric bias EB.

[0116] The period P in the third embodiment HO The frequency of the source within S The setting process of the period P in the second embodiment HO The source frequency f S The setting process is the same as .

[0117] In the third embodiment, the start-up period P in each of one or more consecutive pulse periods including the first pulse period PC1 is S The length of time is the same as the start-up period P in each pulse cycle after the one or more continuous pulse cycles. S The time lengths may be the same or different.

[0118] Furthermore, in a modification of the third embodiment, the control unit 30c may control the pulses during the period P in each of the plurality of pulse cycles. HO , first perform the startup process FSA, then perform the pulse-to-pulse feedback process FSC, and then perform the successive feedback process FSB. Or, Fig.10 As shown, the control unit 30c may also be configured to control the period P in each of the plurality of pulse cycles PC. HO , only the pulse-to-pulse feedback processing FSC is performed. In this case, at least the first and second pulse periods in the plurality of pulse periods PC are each in the period P HO The source frequency f from the start time point to the end time point S , can be changed according to other initial frequency groups.

[0119] Furthermore, in the third embodiment, the period P in each of the plurality of pulse cycles PC may be HO is divided into a plurality of sub-periods, each of which is a period P HO The above-mentioned pulse-to-pulse feedback processing FSC is applied to each phase within the plurality of sub-periods. The time length of each of the plurality of sub-periods is, for example, not less than 10 nanoseconds and not more than 10 microseconds. In addition, in each of the plurality of sub-periods, a source frequency f is generated. S It can be set to a single frequency or multiple frequencies.

[0120] Furthermore, in the third embodiment, the period P in each of the plurality of pulse cycles PC is HO The power level of the generated high frequency electric power HF can be during the period P HO In this case, the period P HO The generation source high frequency electric power HF is divided into a plurality of divided periods at each power level, and a start-up process FSA, an inter-pulse feedback process FSC and a successive feedback process FSB are performed in each of the plurality of divided periods.

[0121] Below, reference Fig.11 , the frequency control method of the second embodiment and the third embodiment is described. Fig.11 is a flow chart of a frequency control method according to another exemplary embodiment. Fig.11 Represents each period P of multiple pulse cycles PC HO Flow of the frequency control method. Fig.11 The frequency control method shown (hereinafter referred to as "method MTB") can be performed in a state where a substrate W is placed on a substrate support 11 in a chamber 10. In the method MTB, a plasma treatment can be performed on the substrate W. The plasma treatment of the method MTB may include plasma etching of the substrate W.

[0122] The method MTB starts at step STBa. Step STBa is performed during a period P in each of a plurality of pulse periods PC. HO In step STBa, in order to generate plasma from the gas in the chamber 10 , pulses of the generation source high frequency electric power HF are supplied from the high frequency power source 31 .

[0123] The method MTB may further include a step STBb. In the step STBb, a start-up period P in each of one or more consecutive pulse periods including an initial pulse period in the plurality of pulse periods PC is S In step STBb, the above-mentioned startup process FSA is performed.

[0124] In step STBc, the pulse-to-pulse feedback process FSC is performed. In addition, the pulse-to-pulse feedback process FSC may also include a start-up period P in each pulse cycle after one or more consecutive pulse cycles of the initial pulse cycle in the plurality of pulse cycles PC. S Alternatively, the pulse-to-pulse feedback process FSC can also be performed during each of the multiple pulse cycles PC. HO Alternatively, the pulse-to-pulse feedback process FSC may be performed during each of the multiple pulse cycles PC. HO Performed after the internal startup process FSA.

[0125] The method MTB may further include a step STBd. In the step STBd, the above-mentioned successive feedback process FSB is performed. In addition, the successive feedback process FSB may also be performed during a period P within a plurality of pulse periods PC. HO During startup P S Alternatively, the successive feedback process FSB can also be performed during the period P within multiple pulse cycles PC. HO , which is performed after the inter-pulse feedback processing FSC performed by the startup processing FSA.

[0126] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0127] For example, in another embodiment, the plasma processing apparatus may be an inductively coupled plasma processing apparatus. In the inductively coupled plasma processing apparatus, a generated high frequency electric power HF is supplied to an antenna.

[0128] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E14].

[0129] [E1]

[0130] A plasma processing device, comprising:

[0131] Chamber;

[0132] a substrate support portion disposed within the chamber;

[0133] a high frequency power supply that supplies a generation source with high frequency electric power to generate plasma from a gas in the chamber; and

[0134] Control Department,

[0135] The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0136] [E2]

[0137] The plasma processing apparatus according to E1, wherein:

[0138] The high frequency power source is configured to continuously supply the generation source high frequency electric power during a single supply period.

[0139] The single supply period includes a plurality of sub-periods,

[0140] The control unit is configured to set the generation source frequency of the i-th sub-period among the multiple sub-periods based on the generation source frequency in each of one or more sub-periods before the i-th period among the multiple sub-periods and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0141] [E3]

[0142] The plasma processing apparatus according to E2, wherein:

[0143] The one or more sub-periods include a first sub-period and a second sub-period following the first sub-period,

[0144] The control unit is configured as follows:

[0145] The generation source frequency in the second sub-period can be set to a frequency different from the generation source frequency in the first sub-period,

[0146] And based on the change in the generation source frequency from the first sub-period to the generation source frequency of the second sub-period and the change in the reflection degree of the generation source high-frequency electric power from the first sub-period to the reflection degree of the generation source high-frequency electric power in the second sub-period, the generation source frequency of the i-th sub-period is set to suppress the reflection degree of the generation source high-frequency electric power.

[0147] [E4]

[0148] The plasma processing apparatus according to E2 or E3, wherein:

[0149] The independent supply period also includes a startup period before the plurality of sub-periods, and the startup period includes a start time point of the independent supply period.

[0150] The control unit is configured to be capable of changing the generation source frequency according to an initial frequency group during a period from the start to the end of the startup period.

[0151] [E5]

[0152] The plasma processing apparatus according to any one of E2 to E4, wherein:

[0153] Also included is a bias power supply electrically coupled to the substrate support portion and capable of supplying an electrical bias for attracting ions to the substrate support portion,

[0154] The single supply period is a period during which the electrical bias from the bias power supply is not supplied to the substrate supporting portion.

[0155] [E6]

[0156] The plasma processing apparatus according to E1, wherein:

[0157] Also included is a bias power supply electrically coupled to the substrate support portion and capable of supplying an electrical bias for attracting ions to the substrate support portion,

[0158] The high frequency power supply is configured to supply the generation source high frequency electric power during one of two periods in each of a plurality of pulse cycles.

[0159] The bias power supply is configured to stop supplying the electrical bias to the substrate support portion during one of the two periods in each of the plurality of pulse cycles, and to supply the electrical bias to the substrate support portion during the other of the two periods.

[0160] The one period includes a startup period, and the startup period includes a start time point of the one period,

[0161] The control unit is configured to set the generation source frequency at each phase within the startup period within the one period within the nth pulse period among the multiple pulse periods, based on a change in the generation source frequency at the same phase within the (nq)th pulse period among the multiple pulse periods to the generation source frequency at the same phase within the (np)th pulse period among the multiple pulse periods, and a change in the reflection degree of the generation source high-frequency electric power from the same phase within the (nq)th pulse period to the reflection degree of the generation source high-frequency electric power at the same phase within the (np)th pulse period, so as to suppress the reflection degree of the generation source high-frequency electric power, wherein q and p are integers greater than 1 and satisfy q>p.

[0162] [E7]

[0163] The plasma processing apparatus according to E6, wherein:

[0164] The control unit is configured to change the generation source frequency according to an initial frequency group during a period from the start to the end of the startup period in each of one or more consecutive pulse periods including at least a first pulse period among the plurality of pulse periods.

[0165] [E8]

[0166] The plasma processing apparatus according to E6 or 7, wherein:

[0167] Each of the plurality of pulse periods includes a plurality of sub-periods after the start-up period,

[0168] The control unit is configured to set the generation source frequency of the i-th sub-period among the multiple sub-periods of each of the multiple pulse periods, based on the generation source frequency in each of one or more sub-periods before the i-th period among the multiple sub-periods and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0169] [E9]

[0170] The plasma processing apparatus according to E8, wherein:

[0171] The one or more sub-periods include a first sub-period and a second sub-period following the first sub-period,

[0172] The control unit is configured as follows:

[0173] The generation source frequency in the second sub-period can be set to a frequency different from the generation source frequency in the first sub-period,

[0174] The generation source frequency of the i-th sub-period is set according to the change from the generation source frequency of the first sub-period to the generation source frequency of the second sub-period and the change from the reflection degree of the generation source high-frequency electric power of the first sub-period to the reflection degree of the generation source high-frequency electric power of the second sub-period, so as to suppress the reflection degree of the generation source high-frequency electric power.

[0175] [E10]

[0176] The plasma processing apparatus according to any one of E6 to E9, wherein:

[0177] The high-frequency power supply is configured to stop supplying the generation source high-frequency electric power during the other period.

[0178] [E11]

[0179] The plasma processing apparatus according to any one of E6 to E9, wherein:

[0180] The high-frequency power supply is configured to be able to supply the generation source high-frequency electric power during the other period.

[0181] [E12]

[0182] The plasma processing apparatus according to E11, wherein:

[0183] The power level of the generation source high-frequency electric power in the one period is lower than the power level of the generation source high-frequency electric power in the other period.

[0184] [E13]

[0185] A power supply system, comprising:

[0186] a high frequency power supply configured to supply a generation source high frequency electric power to generate plasma from a gas in a chamber of a plasma processing device; and

[0187] Control Department,

[0188] The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0189] [E14]

[0190] A frequency control method, comprising:

[0191] Step a, supplying high frequency electric power to a generating source from a high frequency power supply to generate plasma from a gas in a chamber of a plasma processing device; and

[0192] Step b, setting the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone in step a, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

[0193] It is apparent from the above teachings that the present invention is susceptible to numerous modifications and variations. Therefore, it should be understood that the present invention may be practiced in other ways than those specifically described in this specification within the scope of the claims.

[0194] Description of Reference Numerals

[0195] 1-plasma processing device, 10-chamber, 11-substrate supporting part, 31-high frequency power supply, 32-bias power supply, 30c-control part.

Claims

1. A plasma processing device, characterized in that: include: Chamber; a substrate support portion disposed within the chamber; a high frequency power supply configured to supply a generation source high frequency electric power to generate plasma from a gas in the chamber; and Control Department, The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

2. The plasma processing device according to claim 1, characterized in that: The high frequency power source is configured to continuously supply the generation source high frequency electric power during a single supply period. The single supply period includes a plurality of sub-periods, The control unit is configured to set the generation source frequency of the i-th sub-period among the multiple sub-periods based on the generation source frequency and the degree of reflection of the generation source high-frequency electric power in each of one or more sub-periods before the i-th period among the multiple sub-periods, so as to suppress the degree of reflection of the generation source high-frequency electric power.

3. The plasma processing device according to claim 2, characterized in that: The one or more sub-periods include a first sub-period and a second sub-period following the first sub-period, The control unit is configured as follows: The generation source frequency in the second sub-period can be set to a frequency different from the generation source frequency in the first sub-period, And based on the change in the generation source frequency from the first sub-period to the generation source frequency of the second sub-period, and the change in the reflection degree of the generation source high-frequency electric power from the first sub-period to the reflection degree of the generation source high-frequency electric power in the second sub-period, the generation source frequency of the i-th sub-period is set to suppress the reflection degree of the generation source high-frequency electric power.

4. The plasma processing device according to claim 2 or 3, characterized in that: The independent supply period also includes a startup period before the plurality of sub-periods, and the startup period includes a start time point of the independent supply period. The control unit is configured to be capable of changing the generation source frequency according to an initial frequency group during a period from the start to the end of the startup period.

5. The plasma processing device according to claim 2 or 3, characterized in that: Also included is a bias power supply electrically coupled to the substrate support portion and capable of supplying an electrical bias for attracting ions to the substrate support portion, The single supply period is a period during which the electrical bias from the bias power supply is not supplied to the substrate supporting portion.

6. The plasma processing device according to claim 1, characterized in that: Also included is a bias power supply electrically coupled to the substrate support portion and capable of supplying an electrical bias for attracting ions to the substrate support portion, The high frequency power supply is configured to supply the generation source high frequency electric power during one of two periods in each of a plurality of pulse cycles. The bias power supply is configured to stop supplying the electrical bias to the substrate support portion during one of the two periods in each of the plurality of pulse cycles, and to supply the electrical bias to the substrate support portion during the other of the two periods. The one period includes a startup period, and the startup period includes a start time point of the one period, The control unit is configured to set the generation source frequency at each phase within the startup period within the one period within the nth pulse period among the multiple pulse periods, based on a change in the generation source frequency at the same phase within the (nq)th pulse period among the multiple pulse periods to the generation source frequency at the same phase within the (np)th pulse period among the multiple pulse periods, and a change in the reflection degree of the generation source high-frequency electric power from the same phase within the (nq)th pulse period to the reflection degree of the generation source high-frequency electric power at the same phase within the (np)th pulse period, so as to suppress the reflection degree of the generation source high-frequency electric power, wherein q and p are integers greater than 1 and satisfy q>p.

7. The plasma processing device according to claim 6, characterized in that: The control unit is configured to change the generation source frequency according to an initial frequency group during a period from the start to the end of the startup period in each of one or more consecutive pulse periods including at least a first pulse period among the plurality of pulse periods.

8. The plasma processing device according to claim 6 or 7, characterized in that: Each of the plurality of pulse periods includes a plurality of sub-periods after the start-up period, The control unit is configured to set the generation source frequency of the i-th sub-period among the multiple sub-periods of each of the multiple pulse cycles based on the generation source frequency in each of one or more sub-periods before the i-th period among the multiple sub-periods and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

9. The plasma processing device according to claim 8, characterized in that: The one or more sub-periods include a first sub-period and a second sub-period following the first sub-period, The control unit is configured as follows: The generation source frequency in the second sub-period can be set to a frequency different from the generation source frequency in the first sub-period, The generation source frequency of the i-th sub-period is set according to the change from the generation source frequency of the first sub-period to the generation source frequency of the second sub-period, and the change from the reflection degree of the generation source high-frequency electric power of the first sub-period to the reflection degree of the generation source high-frequency electric power of the second sub-period, so as to suppress the reflection degree of the generation source high-frequency electric power.

10. The plasma processing device according to claim 6 or 7, characterized in that: The high-frequency power supply is configured to stop supplying the generation source high-frequency electric power during the other period.

11. The plasma processing device according to claim 6 or 7, characterized in that: The high-frequency power supply is configured to be able to supply the generation source high-frequency electric power during the other period.

12. The plasma processing device according to claim 11, characterized in that: The power level of the generation source high-frequency electric power in the one period is lower than the power level of the generation source high-frequency electric power in the other period.

13. A power supply system, characterized in that: include: a high frequency power supply configured to supply a generation source high frequency electric power to generate plasma from a gas in a chamber of a plasma processing device; and Control Department, The control unit is configured to set the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

14. A frequency control method, characterized in that: include: Step a, supplying high frequency electric power to a generating source from a high frequency power supply to generate plasma from a gas in a chamber of a plasma processing device; and Step b, setting the generation source frequency of the generation source high-frequency electric power when the generation source high-frequency electric power is supplied alone in step a, based on the generation source frequency when the generation source high-frequency electric power was previously supplied alone and the degree of reflection of the generation source high-frequency electric power, so as to suppress the degree of reflection of the generation source high-frequency electric power.

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