PECVD (plasma enhanced chemical vapor deposition) device free of automatic turn-over

Abstract

The invention discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition) device free from automatic turn-over. A first coating cavity unit is formed between a carrier plate positioned in a PECVD cavity and an upper gas box, and a second coating cavity unit is formed between the carrier plate and a lower gas box; the first film coating cavity unit and the second film coating cavity unit are respectively provided with a carrier plate driving unit and a mask plate driving unit, and the carrier plate loaded with the semiconductor substrate moves upwards to approach the upper air box through the driving effect of the carrier plate driving unit so as to realize film coating on the first surface of the semiconductor substrate; or enabling the support plate loaded with the semiconductor substrate to move downwards to be close to the lower gas box so as to realize film coating on the second surface of the semiconductor substrate; the mask plate and the carrier plate are tightly attached through the mask plate driving unit, the fragment cleaning driving unit is used for cleaning the fragments of the cavity, the PECVD device is applied to the photovoltaic solar cell (especially an HJT solar cell), the technological process can be obviously shortened, the production efficiency is improved, and the manufacturing cost of the photovoltaic solar cell is greatly reduced.

Description

Technical Field

[0001] The present invention relates to the field of manufacturing photovoltaic solar cells, and in particular to a PECVD (chemical vapor deposition, more preferably plasma enhanced chemical vapor deposition) device without automatic flipping. Background Art

[0002] With the rapid development of science and technology, HJT (Silicon Heterojunction Solar Cell) solar cells, that is, heterojunction solar cells, have become a hot topic in the field of solar cell technology. Compared with traditional solar cells, HJT solar cells have great development potential. At present, the photoelectric conversion efficiency of HJT solar cells has reached a very high level, up to 27.30%, exceeding the traditional polycrystalline silicon solar cells; with the continuous advancement and optimization of technology (including improving the selection of materials, optimizing the structure of solar cells and interface engineering, etc., which can further reduce the recombination loss of photogenerated carriers), it is expected that the photoelectric conversion efficiency of HJT solar cells will be further improved.

[0003] However, although HJT solar cells have superior efficiency performance, the cost of HJT solar cells in the production process is relatively high, and the initial investment in production equipment is large. The single GW investment in PECVD, the core equipment for producing HJT solar cells, exceeds 200 million yuan, which has become one of the main factors restricting the mass production and promotion of HJT solar cells and their large-scale application. The key reasons for the high investment cost of PECVD equipment are: 1. HJT solar cells have a double-sided structure, and PECVD is required to deposit two different dielectric passivation films on the upper and lower surfaces respectively. After the thin film deposition on one side is completed, the silicon wafer needs to be transferred out of the chamber for flipping, resulting in an increase in the auxiliary chamber and automation configuration of the whole equipment; 2. The intrinsic amorphous silicon and doped amorphous passivation films used on the upper and lower surfaces of HJT solar cells are made of different materials. When preparing the intrinsic layer, n-doped layer or p-doped layer thin film, other film layers attached to the carrier will cause serious cross-contamination to the passivation film layer. Usually, the solution of separating the n-doped layer and p-doped layer carriers is adopted to reduce cross-contamination and further increase the configuration of the auxiliary chamber and automation of the whole machine. Therefore, it is urgent to develop a new coating technology solution to reduce the manufacturing equipment investment cost of HJT solar cells. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a PECVD device that does not require automatic flipping. Applying it as a PECVD device for photovoltaic solar cells (especially HJT solar cells) can significantly shorten the existing PECVD process, improve production efficiency, and significantly reduce the manufacturing cost of photovoltaic solar cells (especially HJT solar cells).

[0005] The technical solution adopted by the present invention is as follows: A PECVD device without automatic flipping comprises a PECVD chamber for coating semiconductor substrates, wherein the semiconductor substrates are loaded on a carrier, and the feeding and discharging of materials into and out of the PECVD chamber are realized by the carrier; an upper gas box and a lower gas box are respectively arranged at the upper end and the bottom of the PECVD coating chamber, a first coating chamber unit is formed between the carrier located in the PECVD chamber and the upper gas box, and a second coating chamber unit is formed between the carrier and the lower gas box; wherein the first coating chamber unit and the second coating chamber unit are provided with a carrier driving unit, and the driving action of the carrier driving unit enables the carrier loaded with the semiconductor substrate to move upwards close to the upper gas box for coating the first surface of the semiconductor substrate, or enables the carrier loaded with the semiconductor substrate to move downwards close to the lower gas box for coating the second surface of the semiconductor substrate; the mask plate driving unit enables the mask plate and the carrier plate to fit tightly; and the debris cleaning driving unit is used to clean the chamber debris.

[0006] Preferably, the carrier has one or more hollow structures, wherein a single hollow structure is used to place a semiconductor substrate.

[0007] Preferably, a hollow upper carrier plate mask is provided in the first coating chamber unit and is located between the upper gas box and the carrier plate carrying the semiconductor substrate; wherein, when coating the first surface of the semiconductor substrate, the upper carrier plate mask fits tightly against the carrier plate surface, and the first surface of the semiconductor substrate placed in the hollow structure is exposed in the first coating chamber unit, ensuring that no winding occurs when coating the first surface of the semiconductor substrate; at the same time, the mask blocks the exposed area of ​​the carrier plate except the semiconductor substrate, so that the thin film cannot be deposited on the carrier plate or only a small amount is deposited on the carrier plate during coating, thereby protecting the carrier plate from being contaminated by the thin film deposited by the first coating chamber, and avoiding contamination of other chambers after being transferred to other chambers.

[0008] Preferably, a first carrier mask driving unit is provided in the first coating chamber unit, through which the upper carrier mask can be moved up and down and corrected in position in the first coating chamber unit, so that the carrier can be accurately fitted to form effective protection.

[0009] Preferably, a hollow download plate mask is provided in the second coating chamber unit and is located between the lower air box and the carrier carrying the semiconductor substrate; wherein, when coating the second surface of the semiconductor substrate, the download plate mask fits tightly against the surface of the carrier, and the second surface of the semiconductor substrate placed in the hollow structure is exposed in the second coating chamber unit, ensuring that no winding occurs when coating the second surface of the semiconductor substrate; at the same time, the mask blocks the exposed area of ​​the carrier except the semiconductor substrate, so that the thin film cannot be deposited on the carrier or only a small amount is deposited on the carrier during coating, thereby protecting the carrier from being contaminated by the thin film deposited by the second coating chamber, and avoiding contamination of the other chamber after being transferred to the other chamber.

[0010] Preferably, a second carrier mask driving unit is provided in the second coating chamber unit, and the carrier mask can be moved up and down and corrected in position in the second coating chamber unit by the driving action of the second carrier mask driving unit, so that the carrier can be accurately fitted to form effective protection.

[0011] Preferably, when the carrier loaded with the semiconductor substrate is transferred into the PECVD chamber, it is placed in a suspended state on the carrier lifting device; the carrier is selectively connected to the carrier driving unit (specifically, the selective installation connection can be achieved by setting a gripper or a gripper-like structure) to realize the driving of the carrier, and at the same time, the distance between the carrier and the upper gas box nozzle or the lower gas box nozzle is adjusted to meet the required coating process spacing, so that the semiconductor substrate completes the preset coating process; when the semiconductor substrate is completed After the coating is completed, the carrier is driven by the carrier driving unit to return to the initial feeding position and be suspended, and then it is transferred to the next process.

[0012] Preferably, the semiconductor substrate is a silicon wafer, and the size of the hollow structure on the carrier corresponds to the size of the silicon wafer; the carrier adopts a carrier substrate made of graphite, and preferably a ceramic reinforcement layer is embedded on the surface of the carrier substrate; preferably, the length and width dimensions of the upper carrier mask and the lower carrier mask are the same as the length and width dimensions of the carrier, and the specific hollow position is also the same as the carrier position, and pure ceramic material is used; the upper air box and the lower air box are respectively made of stainless steel with Teflon anti-corrosion treatment on the surface, and are respectively provided with multiple air holes.

[0013] Preferably, in order to realize the drive installation connection of the carrier, two grippers are designed on both sides of the carrier, and are selectively connected to the carrier drive unit through the grippers; in order to realize the drive installation connection of the upper carrier mask and the download board mask, three grippers are designed on both sides of the upper carrier mask and the download board mask, and are staggered with the grippers of the carrier.

[0014] Preferably, the PECVD chamber is provided with a transparent observation window, and the transparent observation window is externally connected to a visual system unit (preferably an industrial CCD camera can be used as a camera). The internal situation of the PECVD chamber can be captured by the externally connected visual system unit. The fragment situation inside the PECVD chamber can be understood in real time through the capture, and the fragment position can be fed back in time. At the same time, the driving unit located in the PECVD chamber is provided with offset data, which is conducive to improving the driving accuracy.

[0015] Preferably, a debris removal motion device is provided in the PECVD coating chamber; wherein, when debris is detected inside the PECVD coating chamber, corresponding alarm processing is performed, and / or the debris removal motion device moves to the debris position, and adsorbs the debris and moves it to the edge of the chamber for placement so that it does not affect the coating process of the coating chamber; that is to say: the debris removal motion device, the alarm unit and the adsorption unit constitute the debris cleaning drive unit described in this application.

[0016] It should be specially noted that the PECVD (also referred to as "film coating process") of the semiconductor substrate involved in the present application is a well-known process in the art and does not belong to the innovative content of the present application. The present application does not impose any special restrictions on this part. The semiconductor substrate involved in the present application can be used as a raw material for manufacturing solar cells (including thin-film solar cells, crystalline silicon solar cells, flexible solar cells, etc.), and is particularly suitable for manufacturing HJT solar cells.

[0017] It should also be specially noted that the specific structural settings of the carrier drive unit, the first carrier mask drive unit, the second carrier mask drive unit and the debris removal motion device involved in the present application can be specifically set by technical personnel in this field in combination with the driving requirements of the present application, and the present application does not specifically limit this; further, it can specifically include a drive motor, a screw transmission and other structures, and the drive motor preferably adopts a servo motor for precise positioning, wherein the servo motor is installed outside the PECVD chamber and is connected to the transmission component installed inside the PECVD chamber by magnetic fluid, thereby achieving the desired driving effect.

[0018] The present invention proposes a PECVD coating chamber which is respectively provided with an upper gas box and a lower gas box, a first coating chamber unit is formed between the carrier and the upper gas box, and a second coating chamber unit is formed between the carrier and the lower gas box, and then the carrier loaded with the semiconductor substrate is driven by the carrier driving unit to move upward close to the upper gas box for coating the first surface of the semiconductor substrate, or to move downward close to the lower gas box for coating the second surface of the semiconductor substrate. There is no need to use the PECVD device of the prior art which needs to be turned over continuously to achieve coating, which can significantly shorten the existing PECVD process, improve production efficiency, and greatly reduce the manufacturing cost of photovoltaic solar cells (especially HJT solar cells). BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of an HJT solar cell after PECVD coating is completed according to a specific embodiment of the present invention; Figure 2 A schematic diagram of the process flow of coating a silicon wafer using a PECVD device of the prior art; Figure 3 A schematic diagram of a process flow of coating a silicon wafer with a PECVD device is provided by an embodiment of the present invention; Figure 4 It is a partial cross-sectional structural schematic diagram of the lower gas box of the second coating chamber unit in the PECVD chamber in a specific embodiment of the present invention coating the second surface of the silicon wafer; Figure 5 It is a partial cross-sectional structural schematic diagram of the upper gas box of the first coating chamber unit in the PECVD chamber according to a specific embodiment of the present invention coating the first surface of the silicon wafer; Figure 6 It is a partial cross-sectional structural schematic diagram of a second coating chamber unit in a PECVD chamber in a specific embodiment of the present invention, in which the lower coating carrier plate is suspended in the air; Figure 7 It is a partial cross-sectional structural schematic diagram of a lower coating carrier plate of a second coating chamber unit in a PECVD chamber in a specific embodiment of the present invention in a placed state; Figure 8 It is a partial cross-sectional structural schematic diagram of a first coating chamber unit in a PECVD chamber in a specific embodiment of the present invention, in which an upper coating carrier plate is suspended in the air; Fig. 9 It is a partial cross-sectional structural schematic diagram of an upper coating carrier plate of a first coating chamber unit in a PECVD chamber in a specific embodiment of the present invention in a placed state; Fig.10 It is a partial cross-sectional structural diagram of a debris removal device in a lower surface process coating chamber (that is, a second coating chamber unit) of a PECVD chamber according to a specific embodiment of the present invention; Fig.11 It is a schematic diagram of the structure from the upper surface process coating chamber to the lower surface process coating chamber in the PECVD chamber of the present invention. DETAILED DESCRIPTION

[0020] The present embodiment proposes a PECVD device without automatic flipping, comprising a PECVD chamber for coating semiconductor substrates, wherein the semiconductor substrates are loaded on a carrier, and the loading and unloading into and out of the PECVD chamber are realized through the carrier; an upper gas box and a lower gas box are respectively arranged at the upper end and the bottom of the PECVD chamber, and a first coating chamber unit is formed between the carrier located in the PECVD chamber and the upper gas box, and a second coating chamber unit is formed between the carrier and the lower gas box; wherein the first coating chamber unit and the second coating chamber unit are provided with a carrier driving unit, and through the driving action of the carrier driving unit, the carrier loaded with the semiconductor substrate is moved upward to approach the upper gas box for coating the first surface of the semiconductor substrate, or the carrier loaded with the semiconductor substrate is moved downward to approach the lower gas box for coating the second surface of the semiconductor substrate; the mask plate and the carrier are closely fitted through the mask plate driving unit; and the debris removal motion unit is used to clean up the debris that may fall on the chamber gas box during coating from bottom to top.

[0021] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0022] See also Figure 1 The structure of the silicon wafer after the passivation coating process is shown as follows: the length and width of the silicon wafer are 210mmx105mm; an intrinsic layer and an n-type doped layer (i.e., an upper surface) are respectively coated on the first surface of the silicon wafer. Figure 1 The second surface (i.e., the lower surface) of the silicon wafer is coated with an intrinsic layer and a p-type doped layer (i.e., Figure 1 "p-doped layer" shown); Please see further Figure 2 As shown, if the PECVD device of the prior art is used to coat the silicon wafer, the carrier loaded with the silicon wafer needs to go through the following processes: loading chamber, heating chamber, intrinsic layer coating, transmission chamber, discharge chamber, automatic wafer turning machine, loading chamber, heating chamber, intrinsic layer coating, n-type doped layer coating, transmission chamber, discharge chamber, automatic wafer turning machine, loading chamber, heating chamber, p-type doped layer coating, transmission chamber, discharge chamber; the process mainly has the following defects: 1. The equipment is relatively long. From the silicon wafer loading area to the unloading area, two sets of automation equipment and at least five auxiliary chambers need to be inserted, which has a certain impact on the workshop and floor space; 2. Impact of process. Multiple flipping of the guide sheet increases the overall process and time. The belts and suction cups of the two automated flipping devices increase the contact with the silicon wafer, increasing scratches and belt marks on the surface of the silicon wafer. 3. The solar cell tray structure design used for unidirectional coating cannot effectively separate the n-doped layer / p-doped layer of the solar cell, resulting in a high proportion of defective cells; 4. Debris in the coating chamber cannot be cleaned in time, resulting in obstruction of the air box nozzle, which leads to poor formation of surrounding solar cells, and even causes the entire batch to be defective or fail.

[0023] Please see further Figure 3 It is shown that the PECVD device provided by the technical solution of the present application is used to coat the silicon wafer. The process that the carrier loaded with the silicon wafer needs to go through only includes: loading chamber, heating chamber, upper intrinsic layer coating, lower intrinsic layer coating, n-type doped layer coating, p-type doped layer coating, transmission chamber, and discharge chamber. Please further refer to Fig.11 As shown, the upper intrinsic layer coating and the n-type doped layer coating are completed in the upper surface process coating chamber, and the lower intrinsic layer coating and the p-type doped layer coating are completed in the lower surface process coating chamber, and the switching between the coating layers is achieved through the transmission cavity; it should be noted that the actual operation sequence of the upper intrinsic layer coating, the lower intrinsic layer coating, the n-type doped layer coating, and the p-type doped layer coating can be independently selected according to actual needs, and the process implementation sequence is not a special restriction condition of the present application; wherein, in this embodiment, the total thickness of the carrier is 5mm; the length and width dimensions of the limiting step of a single hollow structure for placing the silicon wafer position in the carrier are 211mmx106mm, and the length and width dimensions of the hollow are 209x104mm, the hollow structure dimensions of the upper carrier mask and the lower carrier mask correspond to the carrier structure dimensions, and the hollow dimensions of the upper carrier mask are 210x105mm, and the hollow dimensions of the lower carrier mask are 209x104mm, to ensure that there will be no winding and leakage problems.

[0024] In order to further illustrate the coating process of this embodiment, the present application specifically develops the following implementation process: Implementation process of coating the first surface of the silicon wafer (intrinsic layer coating or n-doped layer coating): please refer to Figure 5 , Figure 8 , Fig. 9 and Fig.11As shown, after the carrier 2 is transferred to the first coating chamber unit (that is, the upper surface process coating chamber, the top of which is provided with an upper air box 4'), it is automatically placed on the carrier driving unit 5'. At this time, the carrier 2 is in a suspended state (see Figure 8 ), after the CCD camera 1' takes a picture of the position of the carrier 2, the carrier mask driving unit 6' drives the carrier mask 3' and closely attaches it to the top of the carrier 2. At this time, the carrier 2 is in a placed state (see Fig. 9 ), wherein, except for the silicon wafer position being exposed, all other positions in the carrier 2 are covered by the mask plate, so as to avoid bypass plating when the intrinsic layer or n-doped layer is deposited on the silicon wafer; and to avoid the simultaneous deposition of the passivation film on the carrier 2 when the coating chamber deposits the passivation film on the silicon wafer surface, thereby avoiding chamber contamination when the carrier 2 is transferred to the next coating chamber; after the coating is completed, the carrier mask driving unit 6' moves the carrier mask 3' upwards, and the carrier driving unit 5' moves the carrier 2 device back to the initial suspended position, and is grabbed by the transmission system and transferred to the next station.

[0025] Implementation process of coating the second surface of the silicon wafer (intrinsic layer coating or p-doped layer coating): please refer to Figure 4 , Figure 6 , Figure 7 and Fig.11 As shown, the bottom of the second coating chamber unit (that is, the lower surface process coating chamber) is provided with a lower air box 1 ( Figure 4 ); the CCD camera 8 can take a picture of the position of the carrier 2; the carrier 2 is automatically placed on the carrier drive unit 3, and the carrier 2 is in a suspended state (see details). Figure 6 ); the carrier driving unit 3 slowly lowers the carrier 2 close to the carrier mask 4, at which time the carrier 2 is in a placed state (see Figure 7 ), wherein, except for the silicon wafer position being exposed, all other positions in the bottom of the carrier 2 are covered; to avoid wrap-around plating when the intrinsic layer or p-doped layer is deposited on the silicon wafer; and to avoid the simultaneous deposition of the passivation film on the carrier 2 when the coating chamber deposits the passivation film on the silicon wafer surface, thereby avoiding chamber contamination when the carrier 2 is transferred to the next coating chamber; after the coating is completed, the second carrier mask driving unit 5 moves the second carrier mask 4 to the bottom, and the carrier driving unit 3 moves the carrier 2 device back to the initial suspended position to the discharge chamber for the next process of making the battery cell.

[0026] When a hollow carrier is used to complete the continuous coating of the first surface (upper surface) and the second surface (lower surface) at one time, there is a risk of silicon wafer fragments falling during the coating and transportation process. In particular, when silicon wafer fragments fall in the second surface (lower surface) coating chamber, the silicon wafer fragments will fall on the gas box below the PECVD, causing the local coating area to be blocked and having a serious impact on the process gas field. To this end, the present invention is provided with the following in the second surface (lower surface) coating chamber: Fig.10 The debris cleaning drive unit shown (including the picking suction cup 7, the picking lifting mechanism 9 and the picking transverse movement device 6, etc.) when debris appears in the cavity is captured by the visual camera and the position information of the debris is sent out. Under the condition that no coating process is performed, the picking transverse movement device 6 and the picking lifting mechanism 9 are linked with two axes to drive the picking suction cup 7 to absorb the debris and place it outside the air box.

[0027] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0028] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A PECVD device without automatic flipping, comprising a feeding chamber, a discharging chamber, a buffer chamber, and a PECVD chamber for coating a semiconductor substrate, wherein the semiconductor substrate is loaded on a carrier, and the feeding and discharging to and from the PECVD chamber are realized by the carrier transmission; characterized in that: An upper gas box and a lower gas box are respectively provided at the upper end and the bottom of the PECVD coating chamber, and a first coating chamber unit is formed between a carrier located in the PECVD coating chamber and the upper gas box, and a second coating chamber unit is formed between the carrier and the lower gas box; wherein, the first coating chamber unit and the second coating chamber unit are provided with a carrier driving unit, through the driving action of the carrier driving unit, the carrier loaded with the semiconductor substrate moves upward to approach the upper gas box for coating the first surface of the semiconductor substrate, or the carrier loaded with the semiconductor substrate moves downward to approach the lower gas box for coating the second surface of the semiconductor substrate.

2. The PECVD device without automatic flipping according to claim 1, characterized in that: The carrier has one or more hollow structures, wherein a single hollow structure is used for placing a semiconductor substrate.

3. The PECVD device without automatic flipping according to claim 1 or 2, characterized in that: A hollow upper carrier plate mask is provided in the first coating chamber unit and is located between the upper gas box and the carrier plate carrying the semiconductor substrate; wherein, when coating the first surface of the semiconductor substrate, the upper carrier plate mask is tightly attached to the surface of the carrier plate, and the first surface of the semiconductor substrate placed in the hollow structure is exposed to the first coating chamber unit, ensuring that no winding is generated when coating the first surface of the semiconductor substrate, while protecting the carrier plate from being contaminated by the thin film deposited by the first coating chamber.

4. The PECVD device without automatic flipping according to claim 3, characterized in that: A first carrier plate mask driving unit is disposed in the first coating chamber unit, and the upper carrier plate mask is driven by the first carrier plate mask driving unit to achieve up and down movement and position correction in the first coating chamber unit.

5. The PECVD device without automatic flipping according to claim 1 or 2, characterized in that: A hollow download plate mask is provided in the second coating chamber unit and is located between the lower air box and the carrier plate carrying the semiconductor substrate; wherein, when coating the second surface of the semiconductor substrate, the download plate mask fits tightly against the surface of the carrier plate, and the second surface of the semiconductor substrate placed in the hollow structure is exposed in the second coating chamber unit, ensuring that no winding is generated when coating the second surface of the semiconductor substrate, while protecting the carrier plate from being contaminated by the thin film deposited by the second coating chamber.

6. The PECVD device without automatic flipping according to claim 5, characterized in that: A second carrier mask driving unit is provided in the second coating chamber unit, and the carrier mask is driven by the second carrier mask driving unit to move up and down and correct its position in the second coating chamber unit.

7. The PECVD device without automatic flipping according to claim 1, characterized in that: When the carrier loaded with the semiconductor substrate is transferred into the PECVD chamber, it is placed in a suspended state on the carrier lifting device; the carrier is selectively connected to the carrier driving unit to realize the driving of the carrier, and the distance between the carrier and the upper air box nozzle or the lower air box nozzle is adjusted to meet the required coating process spacing; When the semiconductor substrate is coated, the carrier is driven by the carrier driving unit to return to the initial feeding position and be suspended, and then transferred to the next process.

8. The PECVD device without automatic flipping according to claim 1, characterized in that: The semiconductor substrate is a silicon wafer; the carrier plate adopts a carrier plate base body made of graphite, and a ceramic reinforcement layer is preferably embedded on the surface of the carrier plate base body.

9. The PECVD device without automatic flipping according to claim 1, characterized in that: The PECVD chamber is provided with a transparent observation window, and the external part of the transparent observation window is connected to a visual system unit. The internal situation of the PECVD chamber is captured through the externally connected visual system unit, and the offset data is provided to the driving unit located in the PECVD chamber, which is conducive to improving the driving accuracy.

10. The PECVD device without automatic flipping according to claim 1, characterized in that: A debris removal motion device is provided in the PECVD coating chamber; wherein, when debris is detected inside the PECVD chamber, corresponding alarm processing is performed, and / or the debris removal motion device moves to the debris position, and then the debris is adsorbed and moved to the edge of the chamber for placement so that it does not affect the coating process of the coating chamber.

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