Semiconductor laser element with strain polarity topology layer

Abstract

The invention discloses a semiconductor laser element with a strain polarity topological layer, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and the strain polarity topological layer is arranged between the upper waveguide layer and the upper limiting layer. The strain polarity topology layer comprises a first strain polarity topology layer, a second strain polarity topology layer and a third strain polarity topology layer. Specific spontaneous polarization coefficient distribution and specific Philips ionization degree distribution are adopted to generate polarity inverse vortex and polarity topological characteristics, mechanical loss is shielded, the strain polarization effect of the active layer is reduced, the hole injection barrier is reduced, the carrier injection uniformity is improved, and the overlapping probability of electron hole wave functions of the active layer is improved. The mode gain of the laser is improved, the limiting factor and gain uniformity are enhanced, the excitation threshold of the laser element is reduced, and the optical power and slope efficiency of the laser element are improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a strained polarity topological layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect. 3) Light-emitting diodes The tube spontaneously radiates, without any external influence, and it is incoherent light that transitions from high energy level to low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in energy levels of the electron transition, producing photons and induced photons that are completely coherent light; 4) Different principles: Under the action of external voltage, the light-emitting diode produces radiation recombination and luminescence when electron holes transition to the quantum well or pn junction, while the laser needs the lasing conditions to be met before it can be lased. The carrier inversion distribution in the active area must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, meets the threshold condition so that the gain is greater than the loss, and finally outputs the laser.

[0004] Nitride semiconductor lasers have the following problems: 1) The large internal lattice mismatch and strain cause strong polarization effects, and the QCSE quantum confinement Stark effect strongly limits the improvement of the laser's electro-lasing gain; 2) The optical waveguide absorption loss is high, and the inherent carbon impurities in the p-type semiconductor will compensate the acceptor and destroy the p-type, etc. The p-type doping has a low ionization rate, and a large number of unionized Mg acceptor impurities will cause the internal optical loss to increase, and the refractive index dispersion of the laser, and the confinement factor decreases with the increase of wavelength, resulting in a decrease in the mode gain of the laser; 3) The light field mode leaks to the substrate to form a standing wave, which will lead to low substrate mode suppression efficiency and poor far-field image FFP quality. 4) The hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and decreased peak gain. Summary of the invention

[0005] The present invention provides a semiconductor laser element with a strained polar topological layer. The specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strained polar topological layer generate polar anti-vortex and polar topological characteristics, shield mechanical loss, reduce the strain polarization effect of the active layer, reduce the hole injection barrier, improve the uniformity of carrier injection, improve the overlap probability of the electron-hole wave function of the active layer, improve the mode gain of the laser, enhance the limitation factor and gain uniformity, reduce the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0006] The present invention provides a semiconductor laser element with a strain polarity topological layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein a strain polarity topological layer is provided between the upper waveguide layer and the upper confinement layer.

[0007] The strained polarity topological layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InG aAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination;

[0008] The strain polarity topological layer includes a first strain polarity topological layer, a second strain polarity topological layer and a third strain polarity topological layer.

[0009] Preferably, the spontaneous polarization coefficient distribution of the first strain polarity topological layer has a function y=A+B*lnx+1 / x-1 curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer has a function y=C+D*a x (a>1) curve distribution, the spontaneous polarization coefficient distribution of the third strain polar topological layer has the function y=E+F*xe x Curved distribution.

[0010] Preferably, the spontaneous polarization coefficient of the first strained polarity topological layer is d, the spontaneous polarization coefficient of the second strained polarity topological layer is e, and the spontaneous polarization coefficient of the third strained polarity topological layer is f, wherein: f≤d≤e.

[0011] Preferably, the Philips ionization distribution of the first strained polar topological layer has a function y=G+H*x / e x Curve distribution, the Philips ionization degree distribution of the second strain polar topological layer has the function y = I + J * a x (a>1) curve distribution, the Philips ionization degree distribution of the third strain polar topological layer has the function y=K+L*e x x 2 Second quadrant curve distribution.

[0012] Preferably, the Philips ionization degree of the first strained polar topological layer is g, the Philips ionization degree of the second strained polar topological layer is h, and the Philips ionization degree of the third strained polar topological layer is i, wherein: 0.1≤i≤h≤g≤5.

[0013] Preferably, the piezoelectric polarization coefficient distribution of the first strain polar topological layer has a function y=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer has the function y = O + P * a x (0<a<1) curve distribution, the piezoelectric polarization coefficient distribution of the third strain polar topological layer has the function y=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer is j, the piezoelectric polarization coefficient of the second strain polarity topological layer is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer is l, wherein: 0.5≤k≤j≤l≤5.

[0014] Preferably, the elastic coefficient distribution of the first strain polarity topological layer has a function y=S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer has the function y = U + V * a x (0<a<1) curve distribution, the elastic coefficient distribution of the third strain polarity topological layer has the function y=W+Z*ex / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer is m, the elastic coefficient of the second strain polarity topological layer is n, and the elastic coefficient of the third strain polarity topological layer is p, wherein: 50≤m≤n≤p≤1000 (GPa).

[0015] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0016] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

[0017] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0018] Compared with the prior art, the semiconductor laser element with a strained polarity topological layer provided in the embodiment of the present invention has the following beneficial effects:

[0019] 1. The specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strain polar topological layer generate polar anti-vortex and polar topological characteristics, shield mechanical loss, reduce the strain polarization effect of the active layer, reduce the hole injection barrier, improve the uniformity of carrier injection, improve the overlap probability of the electron-hole wave function of the active layer, improve the mode gain of the laser, enhance the limitation factor and gain uniformity, reduce the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0020] 2. The specific piezoelectric polarization coefficient distribution and the specific elastic coefficient distribution of the strain polar topological layer produce a stress-induced birefringence effect, enhance the tunable second harmonic and nonlinear optical properties, regulate the laser polarization independence so that the laser propagates along the active layer direction, prevent light leakage to the substrate, suppress the substrate mode, improve the far-field image quality, improve the beam quality factor, and confine the internal light field more between the upper waveguide layer and the lower waveguide layer, thereby reducing internal optical losses, improving the mode gain of the laser, and enhancing the confinement factor and gain uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a semiconductor laser element with a strained polarity topological layer provided by the present invention.

[0022] Figure 2 A SIMS secondary ion mass spectrum of a semiconductor laser element with a strained polarity topological layer provided by the present invention.

[0023] Markings in the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: strain polarity topological layer; 106a: first strain polarity topological layer; 106b: second strain polarity topological layer; 106c: third strain polarity topological layer. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to solve the above problems, a semiconductor laser element with a strained polarity topological layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1-2 The present invention provides a semiconductor laser element with a strain polarity topological layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein a strain polarity topological layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The strained polarity topological layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, I nGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination;

[0028] The strained polarity topological layer 106 includes a first strained polarity topological layer 106 a , a second strained polarity topological layer 106 b and a third strained polarity topological layer 106 c .

[0029] The spontaneous polarization coefficient distribution of the first strain polarity topological layer (106a) has a function y=A+B*lnx+1 / x-1 curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer (106b) has a function y=C+D*a x (a>1) curve distribution, the spontaneous polarization coefficient distribution of the third strain polar topological layer (106c) has the function y=E+F*xe x The spontaneous polarization coefficient of the first strain polarity topological layer (106a) is d, the spontaneous polarization coefficient of the second strain polarity topological layer (106b) is e, and the spontaneous polarization coefficient of the third strain polarity topological layer (106c) is f, wherein: f≤d≤e.

[0030] The Philips ionization distribution of the first strained polar topological layer (106a) has a function y=G+H*x / e x Curve distribution, the Philips ionization distribution of the second strain polar topological layer (106b) has a function y=I+J*a x (a>1) curve distribution, the Philips ionization degree distribution of the third strain polar topological layer (106c) has a function y=K+L*e x x 2 The second quadrant curve distribution: The Philips ionization degree of the first strain polarity topological layer (106a) is g, the Philips ionization degree of the second strain polarity topological layer (106b) is h, and the Philips ionization degree of the third strain polarity topological layer (106c) is i, wherein: 0.1≤i≤h≤g≤5.

[0031] In summary, the specific spontaneous polarization coefficient distribution and the specific Philips ionization degree distribution of the strain polar topological layer produce polar anti-vortex and polar topological characteristics, shield mechanical losses, reduce the strain polarization effect of the active layer, reduce the hole injection barrier, improve the uniformity of carrier injection, improve the overlapping probability of the electron-hole wave function of the active layer, improve the mode gain of the laser, enhance the confinement factor and gain uniformity, reduce the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0032] The piezoelectric polarization coefficient distribution of the first strain polar topological layer (106a) has a function y=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer (106b) has a function y=O+P*a x (0<a<1) curve distribution, the piezoelectric polarization coefficient distribution of the third strain polar topological layer (106c) has a function y=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer (106a) is j, the piezoelectric polarization coefficient of the second strain polarity topological layer (106b) is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer (106c) is l, wherein: 0.5≤k≤j≤l≤5.

[0033] The elastic coefficient distribution of the first strain polarity topological layer (106a) has a function y=S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer (106b) has the function y=U+V*a x (0<a<1) curve distribution, the elastic coefficient distribution of the third strain polarity topological layer (106c) has the function y=W+Z*e x / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer (106a) is m, the elastic coefficient of the second strain polarity topological layer (106b) is n, and the elastic coefficient of the third strain polarity topological layer (106c) is p, wherein: 50≤m≤n≤p≤1000 (GPa).

[0034] In summary, the specific piezoelectric polarization coefficient distribution and the specific elastic coefficient distribution of the strain polar topological layer produce a stress-induced birefringence effect, enhance the tunable second harmonic and nonlinear optical properties, regulate the laser polarization independence so that the laser propagates along the active layer direction, prevent light leakage to the substrate, suppress the substrate mode, improve the far-field image quality, improve the beam quality factor, confine the internal light field more to the middle of the upper waveguide layer and the lower waveguide layer, reduce the internal optical loss, improve the mode gain of the laser, and enhance the confinement factor and gain uniformity.

[0035] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0036] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.43 79％ Optical power(W) 4.1 10.36 153％ Limiting Factor 1.40％ 2.34％ 67％ <![CDATA[Internal optical loss (cm -1 )]]> 17.2 11.6 -33％

[0037] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0038] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0039] In the present invention, the substrate 100 is sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0040] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element with a strain polarity topological layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A strain polarity topological layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105), The strained polar topological layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The strain polarity topological layer (106) comprises a first strain polarity topological layer (106a), a second strain polarity topological layer (106b) and a third strain polarity topological layer (106c).

2. A semiconductor laser element with a strained polarity topological layer according to claim 1, characterized in that: The spontaneous polarization coefficient distribution of the first strain polarity topological layer (106a) has a function y=A+B*lnx+1 / x-1 curve distribution, and the spontaneous polarization coefficient distribution of the second strain polarity topological layer (106b) has a function y=C+D*a x (a>1) curve distribution, the spontaneous polarization coefficient distribution of the third strain polar topological layer (106c) has the function y=E+F*xe x Curved distribution.

3. The semiconductor laser element with strain polarity topological layer according to claim 2, characterized in that: The spontaneous polarization coefficient of the first strain polarity topological layer (106a) is d, the spontaneous polarization coefficient of the second strain polarity topological layer (106b) is e, and the spontaneous polarization coefficient of the third strain polarity topological layer (106c) is f, wherein: f≤d≤e.

4. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The Philips ionization distribution of the first strained polar topological layer (106a) has a function y=G+H*x / e x Curve distribution, the Philips ionization distribution of the second strain polar topological layer (106b) has a function y=I+J*a x (a>1) curve distribution, the Philips ionization degree distribution of the third strain polar topological layer (106c) has a function y=K+L*e x x 2 Second quadrant curve distribution.

5. The semiconductor laser element with strain polarity topological layer according to claim 4, characterized in that: The Philips ionization degree of the first strain polar topological layer (106a) is g, the Philips ionization degree of the second strain polar topological layer (106b) is h, and the Philips ionization degree of the third strain polar topological layer (106c) is i, wherein: 0.1≤i≤h≤g≤5.

6. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The piezoelectric polarization coefficient distribution of the first strain polar topological layer (106a) has a function y=M+N*lnx / e x Curve distribution, the piezoelectric polarization coefficient distribution of the second strain polar topological layer (106b) has a function y=O+P*a x (0<a<1) curve distribution, the piezoelectric polarization coefficient distribution of the third strain polar topological layer (106c) has a function y=Q+R*e x / lnx curve distribution; the piezoelectric polarization coefficient of the first strain polarity topological layer (106a) is j, the piezoelectric polarization coefficient of the second strain polarity topological layer (106b) is k, and the piezoelectric polarization coefficient of the third strain polarity topological layer (106c) is l, wherein: 0.5≤k≤j≤l≤5.

7. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The elastic coefficient distribution of the first strain polarity topological layer (106a) has a function y=S+T*x 2 e x Curve distribution, the elastic coefficient distribution of the second strain polarity topological layer (106b) has the function y=U+V*a x (0<a<1) curve distribution, the elastic coefficient distribution of the third strain polarity topological layer (106c) has the function y=W+Z*e x / x third quadrant curve distribution; the elastic coefficient of the first strain polarity topological layer (106a) is m, the elastic coefficient of the second strain polarity topological layer (106b) is n, and the elastic coefficient of the third strain polarity topological layer (106c) is p, wherein: 50≤m≤n≤p≤1000 (GPa).

8. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor laser element with strain polarity topological layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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