H-bridge driver integrated circuit and motor drive system

Abstract

This application provides an H-bridge driver integrated circuit and a motor drive system, belonging to the field of integrated circuit technology. The circuit includes: a first base plate frame, a second base plate frame, a first chip, and an integrated module; a first conductive adhesive is adhered to a first region of the first base plate frame, and the first chip is adhered to the first region via the first conductive adhesive; conductive adhesive is adhered to the second base plate frame, and the integrated module is adhered to the second base plate frame via conductive adhesive; the first chip includes multiple upper-bridge power switches, and the input terminals of each upper-bridge power switch are connected to a power module via the first conductive adhesive; the integrated module includes: a drive control unit, a pre-drive unit, and multiple lower-bridge power switches, and the output terminals of each lower-bridge power switch are grounded via conductive adhesive adhered to the second base plate frame. This application can reduce the packaging difficulty and cost of the H-bridge driver integrated circuit, and improve the reliability and electromagnetic interference resistance of the H-bridge driver integrated circuit.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and more specifically, to an H-bridge driver integrated circuit and a motor drive system. Background Technology

[0002] H-bridge driver integrated circuits, as a common electronic circuit structure, are widely used in various applications requiring forward and reverse rotation, speed regulation, and braking, such as DC motor drives, power tools, servo systems, and stepper motor drives. The H-bridge driver integrated circuit mainly consists of a main control module, a pre-drive module, an H-bridge power drive module, and a power control module. The pre-drive module converts the control signals output by the main control module into power switch drive signals and sends them to the H-bridge power drive module. Under the action of the power switch drive signals, the H-bridge power drive module provides the corresponding current to the external load.

[0003] In related technologies, the H-bridge driver module, pre-driver module, and power control module can generally be integrated on the same chip. The packaging of H-bridge driver integrated circuits often adopts monolithic integration process technology (Bipolar-CMOS-DMOS technology, abbreviated as BCD process) and multi-chip packaging process.

[0004] However, when packaging H-bridge driver integrated circuits based on related technologies, BCD-packaged H-bridge driver integrated circuits suffer from problems such as complex packaging processes, high packaging costs, and poor electromagnetic interference immunity. Multi-chip packaged H-bridge driver integrated circuits suffer from problems such as complex packaging processes, numerous wire bonding operations, high packaging costs, difficulty in acquiring operational status data, and low reliability. Therefore, the related technical solutions suffer from problems such as complex packaging processes, high packaging costs, poor electromagnetic interference immunity, and low reliability. Summary of the Invention

[0005] The purpose of this application is to provide an H-bridge driver integrated circuit and a motor drive system, which can reduce the packaging difficulty and cost of the H-bridge driver integrated circuit, and improve the reliability and electromagnetic interference resistance of the H-bridge driver integrated circuit.

[0006] The embodiments of this application are implemented as follows:

[0007] A first aspect of this application provides an H-bridge driver integrated circuit, which includes: a first baseboard frame, a second baseboard frame, a first chip, and an integrated module;

[0008] A first conductive adhesive is pasted on a first area of ​​a first base plate frame, and a first chip is pasted on the first area using the first conductive adhesive. A conductive adhesive is pasted on a second base plate frame, and an integrated module is pasted on the second base plate frame using the conductive adhesive.

[0009] The first chip includes multiple upper-bridge power switching transistors, and the integrated module includes: a drive control unit, a high-side drive unit, a low-side drive unit, and multiple lower-bridge power switching transistors;

[0010] The control terminal of each upper bridge power switch is connected to the output terminal of the high-side drive unit, the input terminal of each upper bridge power switch is connected to the external power module through the first conductive adhesive, and the output terminal of each upper bridge power switch is connected to the control terminal of the driven motor.

[0011] The control terminal of each lower bridge power switch is connected to the output terminal of the low-side drive unit, the input terminal of each lower bridge power switch is connected to the control terminal of the driven motor, and the output terminal of each lower bridge power switch is grounded through conductive adhesive pasted on the second base plate frame.

[0012] The input terminals of the high-side drive unit and the low-side drive unit are connected to the drive control unit.

[0013] As one possible implementation, each power switch on the upper bridge is a P-type metal-oxide-semiconductor transistor;

[0014] Each P-type metal-oxide-semiconductor transistor shares a dense N-type substrate and a light N-type epitaxial region. The dense N-type substrate is attached to the first region of the first base plate frame by a first conductive adhesive. The light N-type epitaxial region is disposed on the dense N-type substrate. Multiple dense N-type current channels are disposed between the dense N-type substrate and the upper edge of the light N-type epitaxial region. Multiple light boron drift regions are disposed within the light N-type epitaxial region. The upper surface of each dense N-type current channel is aligned with the upper edge of the light N-type epitaxial region.

[0015] The source of each P-type metal-oxide-semiconductor transistor is disposed on the upper surface of a dense N-type current channel, the drain of each P-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light boron drift region, and the gate of each P-type metal-oxide-semiconductor transistor is disposed between the source and drain of each P-type metal-oxide-semiconductor transistor.

[0016] The source of each P-type metal-oxide-semiconductor transistor is connected to the external power module in sequence through a dense N-type current channel, a dense N-type substrate, and a first conductive adhesive.

[0017] As one possible implementation, each power switch on the upper bridge is an N-type metal-oxide-semiconductor transistor;

[0018] The drain of each N-type metal-oxide-semiconductor transistor is connected to the external power module through the first conductive adhesive, and the source of each N-type metal-oxide-semiconductor transistor is connected to the control terminal of the driven motor.

[0019] As one possible implementation, the integrated module includes: a second chip and a third chip; a second conductive adhesive is attached to a second area of ​​the second base plate frame, and a third conductive adhesive is attached to a third area of ​​the second base plate frame;

[0020] The second chip is attached to the second region using the second conductive adhesive, and the third chip is attached to the third region using conductive adhesive.

[0021] The drive control unit, high-side drive unit, and low-side drive unit are integrated on the second chip, and multiple lower bridge power switches are integrated on the third chip.

[0022] The gates of each lower-bridge power switch are connected to the output of the low-side drive unit via metal lines.

[0023] As one possible implementation, each lower-bridge power switch is an N-type metal-oxide-semiconductor transistor;

[0024] The N-type metal-oxide-semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region. The concentrated boron substrate is attached to the third region of the second base plate frame by a third conductive adhesive. The light boron epitaxial region is disposed on the concentrated boron substrate, and multiple concentrated boron current channels are disposed between the concentrated boron substrate and the upper edge of the light boron epitaxial region. Multiple light phosphorus drift regions are disposed within the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region.

[0025] The source of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a boron-rich current channel, the drain of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light phosphorus drift region, and the gate of each N-type metal-oxide-semiconductor transistor is disposed between the source and drain of each N-type metal-oxide-semiconductor transistor.

[0026] The source of each N-type metal-oxide-semiconductor transistor is grounded sequentially through a boron-type current channel, a boron-type substrate, and a third conductive adhesive.

[0027] As one possible implementation, the integrated module includes: a fourth chip; and a fourth conductive adhesive is attached to a fourth region of the second base plate frame.

[0028] The drive control unit, high-side drive unit, low-side drive unit and multiple lower bridge power switching transistors are integrated on the fourth chip, which is attached to the fourth area of ​​the second base plate frame by the fourth conductive adhesive.

[0029] The gates of each lower-bridge power switch are connected to the output of the low-side drive unit through conductive channels on the fourth chip.

[0030] As one possible implementation, each N-type metal-oxide-semiconductor transistor shares a boron-rich substrate and a boron-dim epitaxial region. The boron-rich substrate is attached to the fourth region of the second base plate frame by a fourth conductive adhesive. The boron-dim epitaxial region is disposed on the boron-rich substrate, and multiple boron-rich current channels are disposed between the upper edge of the boron-rich substrate and the upper edge of the boron-dim epitaxial region. Multiple phosphorus drift regions are disposed within the boron-dim epitaxial region, and the upper surface of each boron-rich current channel is aligned with the upper edge of the boron-dim epitaxial region.

[0031] The source of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a boron-rich current channel, the drain of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light phosphorus drift region, and the gate of each N-type metal-oxide-semiconductor transistor is disposed between the source and drain of each N-type metal-oxide-semiconductor transistor.

[0032] The source of each N-type metal-oxide-semiconductor transistor is grounded sequentially through a boron-type current channel, a boron-type substrate, and a fourth conductive adhesive.

[0033] As one possible implementation, the drive control unit includes: a protection circuit, a power management unit, and a logic control circuit;

[0034] The protection circuit is connected to the first input terminal of the logic control circuit. The second input terminal of the logic control circuit is used to connect to the control module. The first output terminal of the logic control circuit is connected to the input terminal of the high-side driving unit. The second output terminal of the logic control circuit is connected to the input terminal of the low-side driving unit. The third output terminal of the logic control circuit is connected to the input terminal of the power management unit.

[0035] The first output terminal of the power management unit is connected to the control module, and the second output terminal of the power management unit is connected to the external power module through conductive adhesive.

[0036] As one possible implementation, both the first base plate frame and the second base plate frame are made of metal sheets.

[0037] A second aspect of this application provides a motor drive system, which includes a power supply module, a control module, an H-bridge driver integrated circuit, and a driven motor. The power supply module is connected to the H-bridge driver integrated circuit, the input terminal of the H-bridge driver integrated circuit is connected to the control module, the power supply port of the H-bridge driver integrated circuit is connected to the power supply module, the first output terminal of the H-bridge driver integrated circuit is connected to the driven motor, and the second output terminal of the H-bridge driver integrated circuit is connected to the control module.

[0038] The beneficial effects of the embodiments of this application include:

[0039] This application provides an H-bridge driver integrated circuit, which provides support for a first chip for high-side driving through a first base plate frame and for an integrated module for low-side driving through a second base plate frame. The first chip includes multiple upper-side power switches. The integrated module includes a drive control unit, a high-side driving unit, a low-side driving unit, and multiple lower-side power switches. The input terminal of the drive control unit is used to receive the control signal output by the control module. The output terminal of the drive control unit is connected to the high-side driving chip and the low-side driving unit respectively. The output terminal of the high-side driving unit is connected to the control terminal of each upper-side power switch. The output terminal of the low-side driving unit is connected to the control terminal of each lower-side power switch. The input terminal of each upper-side power switch is connected to an external power supply module through a first conductive adhesive. The output terminal of each lower-side power switch is grounded through a conductive adhesive. The output terminal of each upper-side power switch is connected to the control terminal of the driven motor. The input terminal of each lower-side power switch is connected to the control terminal of the driven motor. In this design, the high-voltage driven upper-bridge power switch is integrated onto the first chip and bonded to the first base plate frame. The upper-bridge power switch is connected to the power supply current provided by the external power module via a first conductive adhesive. The low-voltage driven integrated module is bonded to the second base plate frame. Each lower-bridge power switch in the integrated module is grounded via conductive adhesive. This reduces the need for wire bonding between the upper-bridge power switch and the external power module, and between the lower-bridge power switches and the ground terminal, thereby reducing the cost of the integrated circuit and minimizing crosstalk between the high-side and low-side driving electronic components. This approach reduces the packaging difficulty and cost of the H-bridge driver integrated circuit while improving its reliability and electromagnetic interference immunity. Attached Figure Description

[0040] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the package of an existing H-bridge driver integrated circuit;

[0042] Figure 2 This is a schematic diagram of the package of another existing H-bridge driver integrated circuit;

[0043] Figure 3 This is a schematic diagram of the structure of a first type of H-bridge driver integrated circuit provided in an embodiment of this application;

[0044] Figure 4 This application provides a schematic diagram of the structure of an upper bridge power switch.

[0045] Figure 5 This is a schematic diagram of the structure of a second type of H-bridge driver integrated circuit provided in an embodiment of this application;

[0046] Figure 6 This application provides a schematic diagram of the structure of a lower bridge power switch.

[0047] Figure 7 This is a schematic diagram of the structure of a third type of H-bridge driver integrated circuit provided in an embodiment of this application.

[0048] Figure descriptions: 101: First base plate frame; 102: Second base plate frame; 103: First chip; 1031: Upper bridge power switch; 1041: Logic control circuit; 1042: High-side drive unit; 1043: Low-side drive unit; 1044: Lower bridge power switch; 1045: Power management unit; 1046: Protection circuit; 20: Control module; 30: Driven motor; 40: Power module; 41: Second chip; 42: Third chip; 43: Fourth chip. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0051] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0052] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0053] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0054] Currently, H-bridge driver modules, pre-driver modules, and power control modules of H-bridge driver integrated circuits are typically integrated using BCD packaging technology or multi-chip packaging technology. However, when packaging H-bridge driver integrated circuits using BCD technology, all electronic components of the H-bridge driver integrated circuit are integrated together. The BCD packaging process needs to consider the compatibility of all electronic components in the H-bridge driver integrated circuit, resulting in complex packaging processes, high packaging costs, and poor electromagnetic interference immunity. Furthermore, when using multi-chip packaging technology for H-bridge driver integrated circuits, the H-bridge driver integrated circuit is integrated into multiple chips, which need to be connected via wire bonding. This makes it difficult to obtain comprehensive operational status data of the H-bridge driver integrated circuit, and the wire bonding between multiple chips increases the packaging cost and difficulty. Therefore, the related technologies suffer from complex packaging processes, high packaging costs, poor electromagnetic interference immunity, and poor reliability.

[0055] To address this, this application provides an H-bridge driver integrated circuit. By combining BCD packaging technology with multi-chip packaging technology, the H-bridge driver integrated circuit is divided into two main frames. The low-voltage drive integrated module is fixed to the second base plate frame via conductive adhesive on the second base plate frame, and the high-voltage drive first chip is fixed to the first base plate frame via conductive adhesive applied to the first area of ​​the first base plate frame. The first chip includes multiple upper-bridge power switches. The integrated module includes a drive control unit, a high-side drive unit, a low-side drive unit, and multiple lower-bridge power switches. The control terminal of each upper-bridge power switch is connected to the output terminal of the high-side drive unit, and the control terminal of each lower-bridge power switch is connected to the output terminal of the low-side drive unit. The input terminal of each upper-bridge power switch is connected to an external power supply module via conductive adhesive, and the output terminal of each upper-bridge power switch is connected to the control terminal of the driven motor. The input terminal of each lower-bridge power switch is connected to the output terminal of the driven motor, and the output terminal of each lower-bridge power switch is grounded via conductive adhesive applied to the second base plate frame. This can reduce the packaging difficulty and cost of H-bridge driver integrated circuits, and improve the reliability and electromagnetic interference resistance of H-bridge driver integrated circuits.

[0056] H-bridge driver integrated circuits are often used as DC motor control circuits. They are commonly used to switch the polarity of the voltage applied to the load. When the polarity of the motor, which is the load, is changed, the direction of the motor's rotation will change.

[0057] For a motor drive system, the system includes a control module, a pre-drive module, an H-bridge power drive module, and a power control module. The control module, which can be implemented by an MCU or DSP module, is primarily used to implement the drive algorithm. The pre-drive module converts the control signals output by the control module into drive signals for the power switches. The H-bridge power drive module consists of multiple power switches and is mainly used to provide a certain current to the motor to drive the motor coils. The power control module regulates the power signal provided by the external power supply module to power the H-bridge driver integrated circuit. The upper bridge drive circuit of the H-bridge power drive module can be implemented by multiple P-type metal-oxide-semiconductor transistors (MOSFETs) or multiple N-type MOSFETs, but the lower bridge drive circuit is generally implemented by multiple N-type MOSFETs. When the upper bridge drive circuit in the H-bridge power drive module is implemented by multiple N-type MOSFETs, a charge pump must be used to provide sufficient gate drive power to the upper bridge N-type MOSFETs.

[0058] Among them, P-type metal-oxide-semiconductor transistors and N-type metal-oxide-semiconductor transistors can be integrated with the driver IC on the same chip or externally placed outside the driver IC. The driver IC includes: a pre-drive module, a power control module, and protection circuits, etc.

[0059] Taking a three-phase H-bridge driver as an example, there are two main packaging methods for the H-bridge driver integrated circuit in a three-phase H-bridge driver:

[0060] Figure 1 See the schematic diagram of a package for an existing H-bridge driver integrated circuit. Figure 1 The BCD (Browser-Cooler) process integrates P-type metal-oxide-semiconductor (MOSFETs), N-type MOSFETs, a power management module, and a driver IC onto a single chip. This BCD-packaged chip needs to be compatible with the packaging characteristics and processes of the MOSFETs, N-type MOSFETs, and driver IC, leading to a complex and costly packaging process for the H-bridge driver IC. Furthermore, packaging the MOSFETs and driver IC on a single chip causes crosstalk issues when the MOSFETs operate at high currents, resulting in a decrease in the reliability of the H-bridge driver IC.

[0061] Figure 2 For a schematic diagram of another existing H-bridge driver integrated circuit package, see [link / reference]. Figure 2 The H-bridge driver IC is divided into seven chips, each integrated into a single chip using a multi-chip packaging process. These chips are connected via die bonding and wire bonding, resulting in numerous wires and high packaging costs. Furthermore, it makes acquiring operational status data such as temperature and current difficult, reducing the reliability of the H-bridge driver IC.

[0062] The H-bridge driver integrated circuit and motor drive system provided in the embodiments of this application will be explained in detail below with reference to the accompanying drawings.

[0063] Figure 3 For a schematic diagram of the structure of the first H-bridge driver integrated circuit provided in this application, see [link / reference]. Figure 3 The H-bridge driver integrated circuit provided in this application embodiment includes: a first base plate frame 101, a second base plate frame 102, a first chip 103, and an integrated module.

[0064] A first conductive adhesive is attached to a first area of ​​the first base plate frame 101, and a first chip 103 is attached to the first area via the first conductive adhesive. A conductive adhesive is attached to the second base plate frame 102, and an integrated module is attached to the second base plate frame 102 via the conductive adhesive.

[0065] Optionally, the first region is used to indicate the area where the first chip 103 is fixed on the first base plate frame 101. The first region can be any region on the first base plate frame 101, which can be randomly selected by the user. This application does not make any specific limitation on this.

[0066] Optionally, the first conductive adhesive refers to the conductive adhesive used to bond the first chip 103 to the first base plate frame 101. The first base plate frame 101 is mainly used to provide support for the first chip 103. The user pre-selects a first area on the first base plate frame 101 and applies the first conductive adhesive to the first area. The bonding between the first chip 103 and the first base plate frame 101 is achieved through the first conductive adhesive.

[0067] Optionally, the user can pre-apply conductive adhesive to any area on the second base plate frame 102, and the integrated module can be bonded to the second base plate frame using the conductive adhesive.

[0068] The first chip 103 includes multiple upper-bridge power switching transistors 1031, and the integrated module includes: a drive control unit, a high-side drive unit 1042, a low-side drive unit 1043, and multiple lower-bridge power switching transistors 1044.

[0069] Optionally, the first chip 103 includes multiple upper-bridge power switching transistors 1031, that is, the multiple upper-bridge power switching transistors 1031 in the first chip 103 are integrated in the same chip, and the operation of the driven motor 30 is controlled by the integrated upper-bridge power switching transistors 1031.

[0070] Optionally, the integrated module includes: a drive control unit, a high-side drive unit 1042, a low-side drive unit 1043, and multiple lower-bridge power switches 1044. The input terminal of the drive control unit is used to receive control signals input from the external control module 20. The drive control unit converts the control signals provided by the control unit into corresponding power switch drive signals, and applies the corresponding high-side drive signal to the control terminal of the upper-bridge power switch 1031 via the high-side drive unit 1042, and applies the corresponding low-side drive signal to the control terminal of the lower-bridge power switch 1044 via the low-side drive unit 1043. The high-side drive unit 1042 and the low-side drive unit 1043 can constitute a pre-drive unit for driving the upper and lower bridges in the H-bridge driver integrated circuit.

[0071] The control terminal of each upper bridge power switch 1031 is connected to the output terminal of the high-side drive unit 1042, the input terminal of each upper bridge power switch 1031 is connected to the external power module 40 through the first conductive adhesive, and the output terminal of each upper bridge power switch 1031 is connected to the control terminal of the driven motor 30.

[0072] Optionally, the control terminal of each upper bridge power switch 1031 is used to connect to the high-side drive signal output by the high-side drive unit 1042. The input terminal of the upper bridge power switch 1031 is shared through the first conductive adhesive and connected to the current provided by the external power module 40 through the first conductive adhesive. Under the control of the high-side drive unit 1042, the upper bridge power switch 1031 adjusts the operating state of the driven motor 30 based on the power supply signal provided by the external power module 40 so that the driven motor 30 outputs corresponding electrical energy.

[0073] It is worth noting that the input terminals of each upper bridge power switch 1031 are connected to the power supply current provided by the external power module 40 via the first conductive adhesive. In this way, the wiring between the input terminals of the upper bridge power switch 1031 and the external power module 40 can be reduced, thereby reducing the circuit integration cost of the upper bridge power switch 1031.

[0074] The control terminal of each lower bridge power switch 1044 is connected to the output terminal of the low-side drive unit 1043, the input terminal of each lower bridge power switch 1044 is connected to the control terminal of the driven motor 30, and the output terminal of each lower bridge power switch 1044 is grounded through conductive adhesive pasted on the second base plate frame 102.

[0075] Optionally, each lower bridge power switch 1044 is turned on or off under the action of the low-side drive signal output by the low-side drive unit 1043. The output terminals of the lower bridge power switch 1044 are grounded together through conductive glue, which can reduce the wire bonding between the output terminal and the ground terminal of the lower bridge power switch 1044, thereby reducing the cost of circuit integration of the lower bridge power switch 1044.

[0076] In addition, the input terminal of the lower bridge power switch 1044 is connected to the control terminal of the driven motor 30. However, the lower bridge power switch 1044 is not used to control the operating state of the driven motor 30. The lower bridge power switch 1044 is used to ground the driven motor 30 so that the H-bridge driver integrated circuit forms a complete circuit loop.

[0077] It is worth noting that the control terminal of the driven motor 30 can not only serve as a control terminal for receiving control signals from the upper bridge power switch, but also as a power output terminal of the driven motor 30.

[0078] The input terminals of the high-side drive unit 1042 and the low-side drive unit 1043 are connected to the drive control unit.

[0079] Optionally, the drive control unit is used to receive the control signal input from the external control module 20, and convert the received control signal into the corresponding power switch drive signal, and apply it to the corresponding power switch via the high-side drive unit 1042 and the low-side drive unit 1043.

[0080] Optionally, the drive control unit, high-side drive unit 1042, low-side drive unit 1043 and multiple lower bridge power switches 1044 in the integrated module are all low-voltage electronic devices, and each upper bridge power switch 1031 in the first chip 103 is driven by the high-side drive unit 1042.

[0081] In this embodiment, a first base plate frame provides support for the first chip of the high-side drive, and a second base plate frame provides support for the integrated module of the low-side drive. The first chip includes multiple upper-side power switches. The integrated module includes a drive control unit, a high-side drive unit, a low-side drive unit, and multiple lower-side power switches. The input terminal of the drive control unit is used to receive the control signal output by the control module. The output terminal of the drive control unit is connected to the high-side drive unit and the low-side drive unit respectively. The output terminal of the high-side drive unit is connected to the control terminal of each upper-side power switch. The output terminal of the low-side drive unit is connected to the control terminal of each lower-side power switch. The input terminal of each upper-side power switch is connected to an external power module through a first conductive adhesive. The output terminal of each lower-side power switch is grounded through a conductive adhesive. The output terminal of each upper-side power switch is connected to the control terminal of the driven motor. The input terminal of each lower-side power switch is connected to the control terminal of the driven motor. In this design, the high-voltage driven upper-bridge power switch is integrated onto the first chip and bonded to the first base plate frame. The upper-bridge power switch is connected to the power supply current provided by the external power module via a first conductive adhesive. The low-voltage driven integrated module is bonded to the second base plate frame. Each lower-bridge power switch in the integrated module is grounded via conductive adhesive. This reduces the need for wire bonding between the upper-bridge power switch and the external power module, and between the lower-bridge power switches and the ground terminal, thereby reducing the cost of the integrated circuit and minimizing crosstalk between the high-side and low-side driving electronic components. This approach reduces the packaging difficulty and cost of the H-bridge driver integrated circuit while improving its reliability and electromagnetic interference immunity.

[0082] In one alternative implementation, see [link to implementation details]. Figure 4 In the H-bridge driver integrated circuit provided in this application embodiment, each upper bridge power switch 1031 in the first chip 103 is a P-type metal-oxide-semiconductor transistor.

[0083] Optionally, the number of upper-bridge power switches 1031 in the first chip 103 can be 1, 2, 3, etc. The number of upper-bridge power switches 1031 in the first chip 103 is equal to the number of lower-bridge power switches 1044 in the integrated module. When the number of upper-bridge power switches 1031 in the first chip 103 is 1, the H-bridge driver integrated circuit is a single-phase H-bridge driver integrated circuit; when the number of upper-bridge power switches 1031 in the first chip 103 is 2, the H-bridge driver integrated circuit is a dual-phase H-bridge driver integrated circuit; when the number of upper-bridge power switches 1031 in the first chip 103 is 3, the H-bridge driver integrated circuit is a three-phase H-bridge driver integrated circuit. This application takes a three-phase H-bridge driver integrated circuit as an example, but it does not mean that the integrated circuit structure of this application is only applicable to three-phase H-bridge driver integrated circuits. This application does not make specific limitations in this regard.

[0084] Each P-type metal-oxide-semiconductor transistor shares a dense N-type substrate and a light N-type epitaxial region. The dense N-type substrate is attached to the first region of the first base frame 101 by a first conductive adhesive. The light N-type epitaxial region is disposed on the dense N-type substrate. Multiple dense N-type current channels are disposed between the dense N-type substrate and the upper edge of the light N-type epitaxial region. Multiple light boron drift regions are disposed within the light N-type epitaxial region. The upper surface of each dense N-type current channel is aligned with the upper edge of the light N-type epitaxial region.

[0085] Optionally, a dense N-type substrate is used as the substrate of the first chip 103, and a light N-type epitaxial region is generally grown on the dense N-type substrate. The current provided by the external power module 40 flows into the dense N-type substrate through the first conductive adhesive, and then flows into the dense N-type current channel through the dense N-type substrate, and then into the source of the P-type metal oxide semiconductor transistor.

[0086] Optionally, each P-type metal-oxide-semiconductor transistor in the first chip 103 shares a dense N-type substrate and a light N-type epitaxial region, and each P-type metal-oxide-semiconductor transistor is provided with a corresponding dense N-type current channel so that the current provided by the external power supply module 40 is transmitted to the control terminal of the driven motor 30.

[0087] The source of each P-type metal-oxide-semiconductor transistor is disposed on the upper surface of a dense N-type current channel, the drain of each P-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light boron drift region, and the gate of each P-type metal-oxide-semiconductor transistor is disposed between the source and drain of each P-type metal-oxide-semiconductor transistor.

[0088] The source of each P-type metal-oxide-semiconductor transistor is connected to the external power module 40 in sequence through a dense N-type current channel, a dense N-type substrate, and a first conductive adhesive.

[0089] Optionally, each P-type metal-oxide-semiconductor transistor is integrated on the same chip. Each P-type metal-oxide-semiconductor transistor is common source through a dense N-type substrate and a dense N-type current channel. The power supply current provided by the external power module 40 can flow directly into the common dense N-type substrate through the first conductive adhesive, and is transmitted to the drain of each P-type metal-oxide-semiconductor transistor through the dense N-type current channel corresponding to each P-type metal-oxide-semiconductor transistor, and then transmitted to the control terminal of the driven motor 30.

[0090] Optionally, the gate of each P-type metal-oxide-semiconductor transistor is connected to the output terminal of the high-side driving unit 1042, the source of each P-type metal-oxide-semiconductor transistor is connected to the external power module 40 via the first conductive adhesive, and the drain of each P-type metal-oxide-semiconductor transistor is connected to the output terminal of the driven motor 30.

[0091] In one optional implementation, each of the upper bridge power switches 1031 is an N-type metal-oxide-semiconductor transistor.

[0092] The drain of each N-type metal-oxide-semiconductor transistor is connected to the external power module 40 through the first conductive adhesive, and the source of each N-type metal-oxide-semiconductor transistor is connected to the control terminal of the driven motor 30.

[0093] Optionally, the gate of each N-type metal-oxide-semiconductor transistor is connected to the output terminal of the high-side drive unit 1042, the drain of each N-type metal-oxide-semiconductor transistor is connected to the external power supply module 40, and the source of each N-type metal-oxide-semiconductor transistor is connected to the output terminal of the driven motor 30.

[0094] In one alternative implementation, see [link to implementation details]. Figure 5 The integrated module in the H-bridge driver integrated circuit provided in this application embodiment includes: a second chip 41 and a third chip 42, a second conductive adhesive is attached to a second area of ​​the second base plate frame 102, and a third conductive adhesive is attached to a third area of ​​the second base plate frame 102.

[0095] Optionally, the second region is used to indicate the area where the second chip 41 is fixed on the second base plate frame 102, and the second region can be any area on the second base plate frame 102; the third region is used to indicate the area where the third chip 42 is fixed on the second base plate frame 102, and the third region can be any area on the second base plate frame 102; the user can randomly select the second region and the third region on the second base plate frame 102, and this application does not make specific limitations on this.

[0096] Optionally, the second conductive adhesive refers to the conductive adhesive used to bond the second chip 41 to the second base plate frame 102, and the third conductive adhesive refers to the conductive adhesive used to bond the third chip 42 to the second base plate frame 102. The second base plate frame 102 is mainly used to provide support for the second chip 41 and the third chip 42. The user pre-selects a second area and a third area on the second base plate frame 102, and applies the second conductive adhesive to the second area and the third conductive adhesive to the third area. The second conductive adhesive is used to bond the second chip 41 to the second base plate frame 102, and the third conductive adhesive is used to bond the third chip 42 to the second base plate frame 102.

[0097] The second chip 41 is attached to the second region by the second conductive adhesive, and the third chip 42 is attached to the third region by the conductive adhesive.

[0098] The drive control unit, the high-side drive unit 1042 and the low-side drive unit 1043 are integrated on the second chip 41, and multiple lower bridge power switching transistors 1044 are integrated on the third chip 42.

[0099] The gates of each lower-bridge power switch 1044 are connected to the output terminal of the low-side drive unit 1043 via metal lines.

[0100] In one alternative implementation, see [link to implementation details]. Figure 6 In the H-bridge driver integrated circuit provided in this application embodiment, each upper bridge power switch 1031 is an N-type metal-oxide-semiconductor transistor.

[0101] The N-type metal-oxide-semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region. The concentrated boron substrate is attached to the third region of the second base frame 102 by a third conductive adhesive. The light boron epitaxial region is disposed on the concentrated boron substrate, and multiple concentrated boron current channels are disposed between the concentrated boron substrate and the upper edge of the light boron epitaxial region. Multiple light phosphorus drift regions are disposed within the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region.

[0102] Optionally, a boron-rich substrate is used as the substrate of the third chip 42, and a light boron-rich epitaxial region is generally grown on the boron-rich substrate. The current output by the driven motor 30 flows into the boron-rich current channel through the source of the N-type metal oxide semiconductor transistor, and then flows into the boron-rich substrate through the boron-rich current channel, and then is grounded through the third conductive adhesive.

[0103] The source of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a boron-rich current channel, the drain of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light phosphorus drift region, and the gate of each N-type metal-oxide-semiconductor transistor is disposed between the source and drain of each N-type metal-oxide-semiconductor transistor.

[0104] The source of each N-type metal-oxide-semiconductor transistor is grounded sequentially through a boron-type current channel, a boron-type substrate, and a third conductive adhesive.

[0105] Optionally, the gate of each N-type metal-oxide-semiconductor transistor is connected to the output terminal of the low-side driving unit 1043, the source of each N-type metal-oxide-semiconductor transistor is connected to the control terminal of the driven motor 30, and the drain of each N-type metal-oxide-semiconductor transistor is grounded via a third conductive adhesive.

[0106] In one alternative implementation, see [link to implementation details]. Figure 7 The H-bridge driver integrated circuit provided in this application embodiment includes an integrated module comprising: a fourth chip; and a fourth conductive adhesive pasted on the fourth region of the second base plate frame 102.

[0107] The drive control unit, high-side drive unit 1042, low-side drive unit 1043 and multiple lower bridge power switching transistors 1044 are integrated on the fourth chip 43, which is attached to the fourth region of the second base plate frame 102 by the fourth conductive adhesive.

[0108] Optionally, the fourth region is used to indicate the area where the fourth chip 43 is fixed on the second base plate frame 102. The fourth region can be any region on the second base plate frame 102, which can be randomly selected by the user. This application does not make any specific limitation on this.

[0109] Optionally, the fourth conductive adhesive refers to the conductive adhesive used to bond the fourth chip 43 to the second base plate frame 102. The second base plate frame 102 is mainly used to provide support for the fourth chip 43. The user pre-selects a fourth area on the second base plate frame 102 and applies the fourth conductive adhesive to the fourth area to achieve bonding between the fourth chip 43 and the second base plate frame 102.

[0110] Optionally, the user can pre-apply a fourth conductive adhesive to any area on the second base plate frame 102, and the fourth chip 43 can be bonded to the second base plate frame 102 through the fourth conductive adhesive.

[0111] The gates of each lower-bridge power switch 1044 are connected to the output terminal of the low-side drive unit 1043 through the conductive channel on the fourth chip 43.

[0112] In one alternative implementation, see [link to implementation details]. Figure 6In the H-bridge driver integrated circuit provided in this application embodiment, each N-type metal-oxide-semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region. The concentrated boron substrate is attached to the fourth region of the second base frame 102 by a fourth conductive adhesive. The light boron epitaxial region is disposed on the concentrated boron substrate, and multiple concentrated boron current channels are disposed between the concentrated boron substrate and the upper edge of the light boron epitaxial region. Multiple light phosphorus drift regions are disposed in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region.

[0113] The source of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a boron-rich current channel, the drain of each N-type metal-oxide-semiconductor transistor is disposed on the upper surface of a light phosphorus drift region, and the gate of each N-type metal-oxide-semiconductor transistor is disposed between the source and drain of each N-type metal-oxide-semiconductor transistor.

[0114] The source of each N-type metal-oxide-semiconductor transistor is grounded sequentially through a boron-type current channel, a boron-type substrate, and a fourth conductive adhesive.

[0115] In one alternative implementation, see [link to implementation details]. Figure 7 The drive control unit in the integrated module of the H-bridge driver integrated circuit provided in this application embodiment includes: a protection circuit 1046, a power management unit 1045, and a logic control circuit 1041.

[0116] The protection circuit 1046 is connected to the first input terminal of the logic control circuit 1041. The second input terminal of the logic control circuit 1041 is used to connect to the control module 20. The first output terminal of the logic control circuit 1041 is connected to the input terminal of the high-side driving unit 1042. The second output terminal of the logic control circuit 1041 is connected to the input terminal of the low-side driving unit 1043. The third output terminal of the logic control circuit 1041 is connected to the input terminal of the power management unit 1045.

[0117] The first output terminal of the power management unit 1045 is connected to the control module 20, and the second output terminal of the power management unit 1045 is connected to the external power module 40 through conductive adhesive.

[0118] In one optional implementation, the first base plate frame 101 and the second base plate frame 102 in the H-bridge driver integrated circuit provided in this application are both metal sheets, which can be copper sheets, and this application does not specifically limit them.

[0119] In one optional embodiment, the present application provides a motor drive system comprising: a power supply module 40, a control module 20, an H-bridge driver integrated circuit, and a driven motor 30. The power supply module 40 is connected to the H-bridge driver integrated circuit, the input terminal of the H-bridge driver integrated circuit is connected to the control module 20, the power supply port of the H-bridge driver integrated circuit is connected to the power supply module 40, the first output terminal of the H-bridge driver integrated circuit is connected to the driven motor 30, and the second output terminal of the H-bridge driver integrated circuit is connected to the control module 20.

[0120] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0121] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An H-bridge driver integrated circuit, comprising: The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module. The application relates to a power module.

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3. The H-bridge driver integrated circuit of claim 2, wherein, Each of the lower bridge power switch tubes is an N-type metal oxide semiconductor transistor; Each of the N-type metal oxide semiconductor transistors shares a boron-doped substrate and a boron-diluted epitaxial region, the boron-doped substrate is pasted on the third area of the second bottom frame by the fourth conductive adhesive, the boron-diluted epitaxial region is arranged above the boron-doped substrate, a plurality of boron-doped current channels are arranged between the boron-doped substrate and the upper edge of the boron-diluted epitaxial region, and a plurality of phosphorus-diluted drift regions are arranged in the boron-diluted epitaxial region, and the upper surface of each boron-doped current channel is aligned with the upper edge of the boron-diluted epitaxial region; The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the boron-doped current channels, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the phosphorus-diluted drift regions, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor; The source of each N-type metal oxide semiconductor transistor is sequentially connected to the ground through the boron-doped current channel, the boron-doped substrate and the fourth conductive adhesive.

4. The H-bridge driver integrated circuit of claim 1, wherein, The integrated module comprises a fourth chip, and the fourth area of the second bottom frame is pasted with a fifth conductive adhesive; The drive control unit, the high-side drive unit, the low-side drive unit and the plurality of lower bridge power switch tubes are integrally arranged on the fourth chip, and the fourth chip is pasted on the fourth area of the second bottom frame by the fifth conductive adhesive; The gate of each lower bridge power switch tube is connected to the output end of the low-side drive unit through a conductive channel on the fourth chip.

5. The H-bridge driver integrated circuit of claim 4, wherein, Each of the N-type metal oxide semiconductor transistors shares a boron-doped substrate and a boron-diluted epitaxial region, the boron-doped substrate is pasted on the third area of the second bottom frame by the fourth conductive adhesive, the boron-diluted epitaxial region is arranged above the boron-doped substrate, a plurality of boron-doped current channels are arranged between the boron-doped substrate and the upper edge of the boron-diluted epitaxial region, and a plurality of phosphorus-diluted drift regions are arranged in the boron-diluted epitaxial region, and the upper surface of each boron-doped current channel is aligned with the upper edge of the boron-diluted epitaxial region; The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the boron-doped current channels, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the phosphorus-diluted drift regions, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor; The source of each N-type metal oxide semiconductor transistor is sequentially connected to the ground through the boron-doped current channel, the boron-doped substrate and the fourth conductive adhesive.

6. The H-bridge driver integrated circuit of any of claims 1-5, wherein, The drive control unit comprises a protection circuit, a power management unit and a logic control circuit; The protection circuit is connected with a first input end of the logic control circuit, a second input end of the logic control circuit is used for connecting a control module, a first output end of the logic control circuit is connected with an input end of the high-side drive unit, a second output end of the logic control circuit is connected with an input end of the low-side drive unit, and a third output end of the logic control circuit is connected with an input end of the power management unit. A first output end of the power management unit is connected with the control module, and a second output end of the power management unit is connected with an external power module through the second conductive adhesive.

7. The H-bridge driver integrated circuit of any of claims 1-5, wherein, The first bottom plate frame and the second bottom plate frame are both metal sheets.

8. An electric motor drive system characterized by comprising: The motor drive system comprises a power module, a control module, the H-bridge drive integrated circuit according to any one of claims 1-7, and a driven motor, the power module is connected with the H-bridge drive integrated circuit respectively, an input end of the H-bridge drive integrated circuit is connected with the control module, a power supply port of the H-bridge drive integrated circuit is connected with the power module, a first output end of the H-bridge drive integrated circuit is connected with the driven motor, and a second output end of the H-bridge drive integrated circuit is connected with the control module.

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