Pressure sensor chip and manufacturing method thereof

Abstract

The pressure sensor chip comprises a substrate, a sensitive resistor, a lead-out part and a bonding part, the sensitive resistor, the lead-out part and the bonding part are all connected with the substrate, the thickness direction perpendicular to the pressure sensor chip is defined as the horizontal direction, and the lead-out part is located on one side of the bonding part in the horizontal direction; the pressure sensor chip comprises a pressure sensing part, the pressure sensor chip is provided with a first cavity, and at least part of the pressure sensing part is exposed out of the first cavity; the pressure sensing part comprises an isolating layer and a pressure sensing film; at least part of the substrate forms a pressure-sensitive film, the isolating layer is arranged on the pressure-sensitive film, at least part of the sensitive resistor is arranged on the isolating layer, and at least part of the isolating layer is located between the sensitive resistor and the pressure-sensitive film; the invention further discloses a manufacturing method of the pressure sensor chip. According to the invention, the isolation layer is arranged between the sensitive resistor and the substrate, so that the current generated by the sensitive resistor is reduced to partially flow into the substrate under a high-temperature condition, and the chip can be well applied in a high-temperature environment.

Description

Technical Field

[0001] This application belongs to the technical field of sensor chips, and particularly relates to a pressure sensor chip and a manufacturing method thereof. Background Art

[0002] Pressure sensors have a wide range of applications in many fields such as industrial production, medical and health, environmental monitoring, and scientific research. Its basic principle is to convert the pressure change value into an electrical signal change, and the pressure sensor chip is the core component of the pressure sensor.

[0003] In the related art, the pressure sensor chip includes a substrate, a bonding portion, a sensitive resistor, and a connecting portion. The sensitive resistor is located within the substrate. Defining the thickness direction perpendicular to the pressure sensor chip as the horizontal direction, along the horizontal direction, the lead-out portion is located on one side of the bonding portion; directly contacting the sensitive resistor with the substrate may cause part of the current generated by the sensitive resistor to flow into the substrate under high-temperature conditions, making it difficult to use in a high-temperature environment. Summary of the Invention

[0004] The purpose of this application is to provide a pressure sensor chip, which includes a substrate, a sensitive resistor, a lead-out portion, and a bonding portion; the sensitive resistor, the lead-out portion, and the bonding portion are all connected to the substrate. Defining the thickness direction perpendicular to the pressure sensor chip as the horizontal direction, along the horizontal direction, the lead-out portion is located on one side of the bonding portion;

[0005] The pressure sensor chip includes a pressure-sensing portion, the pressure sensor chip has a first cavity, and at least part of the pressure-sensing portion is exposed to the first cavity;

[0006] The pressure-sensing portion includes an isolation layer and a pressure-sensing film; at least part of the substrate forms the pressure-sensing film, the isolation layer is disposed on the pressure-sensing film, at least part of the sensitive resistor is disposed on the isolation layer, and at least part of the isolation layer is located between the sensitive resistor and the pressure-sensing film.

[0007] In this application, the pressure sensor chip includes a substrate, a pressure-sensing portion, a sensitive resistor, a lead-out portion, and a bonding portion. The pressure-sensing portion includes an isolation layer and a pressure-sensing film. At least part of the isolation layer is located between the sensitive resistor and the pressure-sensing film, reducing the part of the current generated by the sensitive resistor flowing into the substrate under high-temperature conditions, enabling the pressure sensor chip to be applied in a high-temperature environment.

[0008] This application also provides a manufacturing method of a pressure sensor chip, and the manufacturing method includes the following steps:

[0009] Provide a substrate and an isolation layer, deposit the isolation layer on at least part of the surface of the substrate, deposit a sensitive resistor on at least part of the surface of the isolation layer, and the isolation layer is located between the sensitive resistor and the substrate;

[0010] Provide a bonding portion to connect the substrate with the bonding portion to form a first cavity;

[0011] Provide a lead-out portion to connect the lead-out portion with the substrate. Define the thickness direction perpendicular to the pressure sensor chip as the horizontal direction. Along the horizontal direction, the lead-out portion is located on one side of the bonding portion.

[0012] In the manufacturing method of the pressure sensor chip of the present application, deposit an isolation layer on at least part of the surface of the substrate, deposit a sensitive resistor on at least part of the surface of the isolation layer. At least part of the isolation layer is located between the sensitive resistor and the substrate, and reduce the current generated by the sensitive resistor flowing into the substrate under high-temperature conditions, so that the pressure sensor chip can be applied to a high-temperature environment. Description of the Drawings

[0013] Figure 1 is a cross-sectional view of the pressure sensor chip;

[0014] Figure 2 is Figure 1 an enlarged view of circle A in

[0015] Figure 3 is Figure 1 an enlarged view of circle B in

[0016] Figure 4 is a cross-sectional view of an embodiment of the pressure-sensitive portion, the bonding portion and the connecting portion;

[0017] Figure 5 is a cross-sectional view of an embodiment of the pressure-sensitive portion, the bonding portion and the connecting portion;

[0018] Figure 6 is a cross-sectional view of the substrate, the first insulating layer and the silicon layer before etching. Detailed Embodiments

[0019] The formation and use of the currently preferred embodiments are discussed in detail below. However, it should be recognized that the present application provides many applicable inventive concepts that can be specifically implemented in a variety of specific contexts. The specific embodiments discussed merely illustrate specific ways of forming and using the present application and do not limit the scope of the present application. To more fully understand the present application and its advantages, the description is now made in conjunction with the drawings.

[0020] Figure 1The cross-sectional view of the pressure sensor chip of the present application. The pressure sensor chip includes a substrate 1, a sensitive resistor 3, a lead-out portion 5, and a bonding portion 6; the sensitive resistor 3, the lead-out portion 5, and the bonding portion 6 are all connected to the substrate 1; the thickness direction Z perpendicular to the pressure sensor chip is defined as the horizontal direction X, and along the horizontal direction X, the lead-out portion 5 is located on one side of the bonding portion 6. The lead-out portion 5 can output signals by connecting to a PCB board through front-end wire bonding, which is convenient for installation and does not use TSV (Through-Silicon Via) technology and TGV (Through-Glass Via) technology to lead out electrical signals, reducing production costs.

[0021] In some embodiments, the pressure sensor chip includes a pressure-sensing portion 7, and the pressure-sensing portion 7 includes an isolation layer 21 and a pressure-sensing film 11; the isolation layer 21 is at least partially disposed on the pressure-sensing film 11, the sensitive resistor 3 is at least partially disposed on the isolation layer 21, the isolation layer 21 is at least partially located between the sensitive resistor 3 and the pressure-sensing film 11, and the substrate 1 at least partially forms the pressure-sensing film 11; the pressure sensor chip has a first cavity 8, and the pressure-sensing portion 7 is at least partially exposed to the first cavity 8. Specifically, the sensitive resistor 3 and a part of the isolation layer 21 are exposed to the first cavity 8, and the pressure-sensing film 11 and a part of the isolation layer 21 are located outside the first cavity 8; the isolation layer 21 is located between the sensitive resistor 3 and the pressure-sensing film 11, reducing the part of the current generated by the sensitive resistor 3 flowing into the substrate 1 under high-temperature conditions, enabling the pressure sensor chip to be applied in a high-temperature environment.

[0022] In some embodiments, the pressure sensor chip includes a substrate 1, a first insulating layer 2, a sensitive resistor 3, a lead-out portion 5, a connecting portion 72, a bonding portion 6, and a pressure-sensing portion 7; the first insulating layer 2 is connected to the substrate 1, the sensitive resistor 3 and the connecting portion 72 are both connected to the first insulating layer 2, the first insulating layer 2 includes at least a part of the isolation layer 21, and the bonding portion 6 is connected to the connecting portion 72; the thickness direction Z perpendicular to the pressure sensor chip is defined as the horizontal direction X, and along the horizontal direction X, the lead-out portion 5 is located on one side of the bonding portion 6.

[0023] In some embodiments, the substrate 1, the pressure-sensing film 11, and the sensitive resistor 3 are all made of silicon, the first insulating layer 2 and the isolation layer 21 are both made of silicon dioxide or silicon nitride, and the first insulating layer 2 and the isolation layer 21 are an integral part; further, the substrate 1 and the pressure-sensing film 11 are both made of N-type silicon, and the sensitive resistor is lightly doped boron P-type silicon.

[0024] In the related art, the N-type silicon substrate 1, the pressure-sensing film 11, and the P-type silicon sensitive resistor 3 are connected to each other. Under normal temperature conditions, the N-type silicon substrate 1, the pressure-sensing film 11, and the sensitive resistor 3 are directly connected to form a PN junction, and the current of the sensitive resistor 3 does not flow to the pressure-sensing film 11 and the substrate 1. However, at higher temperatures, part of the current of the sensitive resistor 3 will flow to the pressure-sensing film 11 and the substrate 1, resulting in the pressure sensor not being able to be used at higher temperatures.

[0025] In this application, a first insulating layer 2 is provided between the substrate 1 and the sensitive resistor 3. Further, an isolation layer 21 is provided between the pressure-sensitive film 11 and the sensitive resistor 3, which can reduce the conduction leakage of the PN junction under high-temperature conditions and improve the operating temperature of the pressure sensor chip.

[0026] Reference Figure 1 As Figure 3 shown, in some embodiments, the connecting portion 72 includes a conductive resistor 71 and a wire portion 73. The conductive resistor 71 is spaced apart from the sensitive resistor 3. The conductive resistor 71 is connected to the bonding portion 6. The wire portion 73 is connected between the conductive resistor 71 and the sensitive resistor 3 and is electrically connected to the conductive resistor 71 and the sensitive resistor 3 respectively. The sensitive resistor 3 and the conductive resistor 71 are electrically connected through the connecting portion 72, which can reduce the mutual influence between the sensitive resistor 3 and the conductive resistor 71 and improve the detection accuracy of the pressure sensor chip; the lead-out portion 5 is connected to the conductive resistor 71; further, along the thickness direction Z of the pressure sensor chip, the lead-out portion 5 covers at least a part of the surface of the conductive resistor 71, and the lead-out portion 5 is closer to the first insulating layer 2 than a part of the bonding portion 6.

[0027] Further, in some embodiments, the conductive resistor 71 is silicon doped with boron, that is, heavily boron-doped P-type silicon. The concentration of boron doped in the conductive resistor 71 is greater than the concentration of boron doped in the sensitive resistor 3, and the resistance value of the conductive resistor 71 is less than the resistance value of the sensitive resistor 3; the conductive resistor 71 has good electrical signal transmission efficiency; a first insulating layer 2 is provided between the conductive resistor 71 and the substrate 1, which can reduce the contact between the conductive resistor 71 and the substrate 1 and cause the problem of PN junction conduction leakage under high-temperature conditions, so that the pressure sensor chip can be used under high-temperature conditions.

[0028] Reference Figure 3 shown, in some embodiments, the wire portion 73 includes a first wire portion 731, a second wire portion 732, a third wire portion 733, a fourth wire portion 734 and a fifth wire portion 735; the first wire portion 731, the second wire portion 732, the third wire portion 733, the fourth wire portion 734 and the fifth wire portion 735 are integral parts.

[0029] In some embodiments, the second wire portion 732 is inclined with respect to the first wire portion 731, and the fourth wire portion 734 is inclined with respect to the fifth wire portion 735; both the first wire portion 731 and the second wire portion 732 are connected to the sensitive resistor 3; the third wire portion 733 is connected to at least a part of the first insulating layer 2; both the fourth wire portion 734 and the fifth wire portion 735 are connected to the conductive resistor 71, and the third wire portion 733 connects the sensitive resistor 3 and the conductive resistor 71 respectively; along the thickness direction Z, the first wire portion 731 covers at least a part of the surface of the sensitive resistor 3, the third wire portion 733 covers at least a part of the surface of the first insulating layer 2, and the fifth wire portion 735 covers at least a part of the surface of the conductive resistor; defining the direction perpendicular to the thickness direction Z as the horizontal direction X, along the horizontal direction X, the second wire portion 732 covers at least a part of the surface of the sensitive resistor 3, and the fourth wire portion 734 covers at least a part of the surface of the conductive resistor 71. The connecting portion 72 can transmit the pressure signal of the sensitive resistor 3 to the conductive resistor 71 well, and has good transmission efficiency.

[0030] Further, in some embodiments, the fifth wire portion 735 covers at least the surface of the conductive resistor 71. Along the horizontal direction X, there is a spacing between the fifth wire portion 735 and the bonding portion 6, reducing the influence on the pressure signal; at least a part of the bonding portion 6 is located between the fifth wire portion 735 and the third insulating layer 42; defining the direction perpendicular to the thickness direction Z as the horizontal direction X, along the horizontal direction X, the fifth wire portion 735 is closer to the bonding portion 6 than the first wire portion 731.

[0031] Still further, in some embodiments, the lead-out portion 5, the first wire portion 731, the second wire portion 732, the third wire portion 733, the fourth wire portion 734, and the fifth wire portion 735 are each selected from at least one of aluminum, copper, and aluminum-copper alloy, which can transmit the electrical signal well; the inside of the first cavity 8 is vacuum, which can form an absolute pressure and reduce the influence of the outside on the pressure-sensitive portion 7.

[0032] Reference Figure 1 And Figure 2 As shown, in some embodiments, the pressure sensor chip includes at least two sensitive resistors 3, and there is a spacing between adjacent two sensitive resistors 3; the third wire portion 733 is located between the sensitive resistor 3 and the conductive resistor 71; at least a part of the first wire portion 731, at least a part of the second wire portion 732, at least a part of the third wire portion 733, at least a part of the fourth wire portion 734, and at least a part of the fifth wire portion 735 are exposed to the first cavity 8; further, there are four sensitive resistors 3 and connecting portions 72. The sensitive resistor 3, the connecting portion 72, and the conductive resistor 71 form a Wheatstone bridge. The pressure converts the pressure signal into an electrical signal through the Wheatstone bridge and transmits it to the lead-out portion 5. The lead-out portion 5 is connected to the PCB board by the front wire bonding method, and then outputs the electrical signal.

[0033] Reference Figure 1 、 Figure 2 and Figure 5 As shown, in some embodiments, the pressure sensor chip includes a second insulating layer 41 and a third insulating layer 42. Along the thickness direction Z of the pressure sensor chip, the second insulating layer 41 and the third insulating layer 42 are located on both sides of the lead-out portion 5. The bonding portion 6, the third insulating layer 42, and the lead-out portion 5 are all located on one side of the conductive resistor 71. The third insulating layer 42 is disposed between the bonding portion 6 and the lead-out portion 5, and the third insulating layer 42 is respectively connected to the bonding portion 6 and the lead-out portion 5. Along the thickness direction Z of the pressure sensor chip, the second insulating layer 41 and the third insulating layer 42 both cover at least a part of the surface of the conductive resistor 71 to protect the conductive resistor 71 from contacting the outside, achieving the purpose of waterproof and dustproof.

[0034] In some embodiments, the bonding portion 6 is selected from silicon dioxide or silicon nitride, specifically silicon dioxide.

[0035] Reference Figure 4 As shown, in some embodiments, the pressure sensor chip has a through hole 43. At least a part of the surface of the second insulating layer 41, at least a part of the surface of the third insulating layer 42, and at least a part of the surface of the conductive resistor 71 are located in the through hole 43. At least a part of the lead-out portion 5 is located in the through hole 43. The lead-out portion 5 is electrically connected to the conductive resistor 71 through the through hole 43 to output an electrical signal. Along the thickness direction Z of the pressure sensor chip, the second insulating layer 41, the third insulating layer 42, and the lead-out portion 5 all cover at least a part of the surface of the conductive resistor 71, and a part of the lead-out portion 5 is exposed to the outside of the second insulating layer 41 and the third insulating layer 42.

[0036] In some embodiments, the first insulating layer 2, the second insulating layer 41, and the third insulating layer 42 are selected from silicon nitride or silicon dioxide, and further selected from silicon dioxide.

[0037] Reference Figure 1 As shown, in some embodiments, the pressure sensor chip has a second cavity 9. The second cavity 9 is at least partially located in the substrate 1, and the second cavity 9 is at least partially in contact with the outside. The pressure-sensitive film 11 is at least partially exposed to the second cavity 9 to sense the pressure of the external environment.

[0038] This application also provides a manufacturing method of a pressure sensor chip, including the following steps:

[0039] Provide the substrate 1 and the isolation layer 21, deposit the isolation layer 21 on at least a part of the surface of the substrate 1, and deposit the sensitive resistor 3 on at least a part of the surface of the isolation layer 21. The isolation layer 21 is located between the sensitive resistor 3 and the substrate 1;

[0040] Provide the bonding portion 6, connect the substrate 1 and the bonding portion 6 to form the first cavity 8;

[0041] Provide a lead-out portion 5, deposit the lead-out portion 5 on at least a part of the surface of the substrate 1, define the thickness direction Z perpendicular to the pressure sensor chip as the horizontal direction X, and along the horizontal direction X, the lead-out portion 5 is located on one side of the bonding portion 6.

[0042] In some embodiments, a method for manufacturing a pressure sensor chip includes the following steps:

[0043] Provide a substrate 1 and a first insulating layer 2, deposit the first insulating layer 2 on at least a part of the surface of the substrate 1, deposit the sensitive resistor 3 on at least a part of the surface of the first insulating layer 2, and the first insulating layer 2 is located between the sensitive resistor 3 and the substrate 1;

[0044] Provide a connecting portion 72 and a bonding portion 6, deposit the connecting portion 72 on at least a part of the surface of the first insulating layer 2; the connecting portion 72 includes a conductive resistor 71, and the bonding portion 6 is bonded to the conductive resistor 71;

[0045] Provide a lead-out portion 5, deposit the lead-out portion 5 on at least a part of the surface of the connecting portion 72, define the thickness direction Z perpendicular to the pressure sensor chip as the horizontal direction X, and along the horizontal direction X, the lead-out portion 5 is located on one side of the bonding portion 6.

[0046] Specifically, in some embodiments, the pressure sensor chip has a pressure sensing portion 7, the pressure sensing portion 7 includes a pressure sensing film 11 and an isolation layer 21, and the isolation layer 21 is deposited on a part of the surface of the pressure sensing film 11; wherein the pressure sensing film 11 and the substrate 1 are an integral part, and both the pressure sensing film 11 and the substrate 1 are N-type silicon; the isolation layer 21 and the first insulating layer 2 are an integral part, and the isolation layer 21 and the first insulating layer 2 are specifically selected as silicon dioxide. An isolation layer 21 is provided between the sensitive resistor 3 and the pressure sensing film 11 to prevent the PN junction from being easily turned on and leaking electricity under high-temperature conditions, thereby affecting the detection accuracy of the pressure sensor chip.

[0047] Reference Figure 6 As shown, specifically, in some embodiments, the substrate 1 is a silicon substrate, deposit a first insulating layer 2 on at least a part of the surface of the substrate 1, then deposit a silicon substrate 101 on at least a part of the surface of the first insulating layer 2. The silicon substrate has a sensitive resistor region 31 and a conductive resistor region 711. The sensitive resistor region 31 is doped with B ions by ion diffusion injection to form a sensitive resistor 3, and the sensitive resistor 3 is deposited on at least a part of the surface of the isolation layer 21; the conductive resistor region 711 is doped with B ions to form a conductive resistor 71. Use DRIE or ICP ion etching process to etch the undoped silicon substrate 101 to expose the first insulating layer 2, so that the sensitive resistor 3 and the conductive resistor 71 are arranged at intervals. Among them, the boron ion concentration in the sensitive resistor region 31 is less than the boron ion concentration in the conductive resistor region, and the resistance value of the sensitive resistor region 31 is greater than the resistance value of the conductive resistor region 711.

[0048] Specifically, in some embodiments, the second cavity 9 is etched in the substrate 1 by using a DRIE or ICP ion etching process, so that a partial surface of the pressure-sensitive film 11 is exposed to the second cavity 9, and the thickness of the pressure-sensitive film 11 is 20-40 μm to meet the pressure range of the pressure sensor.

[0049] Specifically, in some embodiments, a wire portion 73 is deposited on a partial surface of the sensitive resistor 3; specifically, a first wire portion 731 and a second wire portion 732 are respectively deposited on a partial surface of the sensitive resistor 3. The first wire portion 731 is inclined with respect to the second wire portion 732. A third wire portion 733 is deposited on a partial surface of the first insulating layer 2. The third wire portion 733 is respectively connected to the sensitive resistor 3 and the conductive resistor 71. A fourth wire portion 734 and a fifth wire portion 735 are respectively deposited on a partial surface of the conductive resistor 71. The fourth wire portion 734 is inclined with respect to the fifth wire portion 735. The first wire portion 731, the second wire portion 732, the third wire portion 733, the fourth wire portion 734 and the fifth wire portion 735 are an integral part. The lead-out portion 5, the first wire portion 731, the second wire portion 732, the third wire portion 733, the fourth wire portion 734 and the fifth wire portion 735 are each selected from at least one of aluminum, copper and aluminum-copper alloy, specifically selected from aluminum; used to connect the sensitive resistor 3 and the conductive resistor 71, and then output an electrical signal.

[0050] Specifically, in some embodiments, the bonding portion 6 is bonded to the conductive resistor 71 to form the first cavity 8. The first cavity 8 is in a vacuum state. The bonding portion 6 and the conductive resistor 71 are bonded by an anodic bonding method, so that the bonding portion 6 and the conductive resistor 71 have a high connection strength and good connection quality, thereby improving the use stability of the pressure sensor chip.

[0051] Specifically, in some embodiments, along the thickness direction Z of the pressure sensor chip, a protective layer is deposited on at least a partial surface of the conductive resistor 71 to prevent the conductive resistor 71 from contacting the outside, achieving the purpose of waterproofing and dustproofing. And a second insulating layer 41, a third insulating layer 42 and a through hole 43 are etched on the protective layer by using a DRIE or ICP ion etching process. The conductive resistor 71 is exposed between the second insulating layer 41 and the third insulating layer 42, and partial surfaces of the second insulating layer 41 and the third insulating layer 42 are also exposed to the through hole 43. The lead-out portion 5 is deposited on a partial surface of the conductive resistor 71 through the through hole 43. Among them, the lead-out portion 5 is respectively connected to the second insulating layer 41 and the third insulating layer 42, and a part of the lead-out portion 5 is exposed to the outside of the second insulating layer 41 and the third insulating layer 42, and is used for positive wire bonding to connect the PCB board to output a signal.

[0052] Specifically, in some embodiments, the deposition process of the manufacturing method of the pressure sensor chip may be selected from at least one of LPCVD, APCVD, PECVD, and PVD.

[0053] The above embodiments are only used to illustrate the present application and do not limit the technical solutions described in the present application. The understanding of the present application should be based on those skilled in the art. Although this specification has described the present application in detail with reference to the above embodiments, those of ordinary skill in the art should understand that those skilled in the art can still modify or equivalently replace the present application, and all technical solutions and their improvements that do not depart from the spirit and scope of the present application should be covered within the scope of the claims of the present application.

Claims

1. A pressure sensor chip, comprising a substrate (1), a sensitive resistor (3), a lead-out portion (5) and a bonding portion (6); the sensitive resistor (3), the lead-out portion (5), and the bonding portion (6) are all connected to the substrate (1). Define the thickness direction (Z) perpendicular to the pressure sensor chip as the horizontal direction (X). Along the horizontal direction (X), the lead-out portion (5) is located on one side of the bonding portion (6). The pressure sensor chip includes a pressure-sensing portion (7). The pressure sensor chip has a first cavity (8), and the pressure-sensing portion (7) is at least partially exposed to the first cavity (8). The pressure-sensing portion (7) includes an isolation layer (21) and a pressure-sensing film (11). At least a part of the substrate (1) forms the pressure-sensing film (11). The isolation layer (21) is disposed on the pressure-sensing film (11). The sensitive resistor (3) is at least partially disposed on the isolation layer (21). The isolation layer (21) is at least partially located between the sensitive resistor (3) and the pressure-sensing film (11).

2. The pressure sensor chip according to claim 1, wherein: the pressure sensor chip includes a connecting portion (72) and a first insulating layer (2). The first insulating layer (2) is disposed on the substrate (1), and the connecting portion (72) is disposed on the connecting portion (72); the connecting portion (72) includes a conductive resistor (71) and a wire portion (73). The conductive resistor (71) is connected to the bonding portion (6). The wire portion (73) is at least partially located between the conductive resistor (71) and the sensitive resistor (3), and the wire portion (73) is respectively connected to the conductive resistor (71) and the sensitive resistor (3); Along the thickness direction of the pressure sensor chip, the wire portion (73) is at least partially disposed on at least a part of the surface of the first insulating layer (2), and the lead-out portion (5) is disposed on at least a part of the surface of the conductive resistor (71). The first insulating layer (2) includes at least a part of the isolation layer (21).

3. The pressure sensor chip according to claim 2, wherein: the pressure sensor chip includes a second insulating layer (41) and a third insulating layer (42). The lead-out portion (5) is at least partially located between the second insulating layer (41) and the third insulating layer (42). The third insulating layer (42) is at least partially located between the bonding portion (6) and the lead-out portion (5); the pressure sensor chip has a through hole (43). At least a part of the surface of the second insulating layer (41), at least a part of the surface of the third insulating layer (42), and at least a part of the surface of the conductive resistor (71) are located in the through hole (43). The lead-out portion (5) is at least partially located in the through hole (43). Along the thickness direction (Z), the second insulating layer (41), the third insulating layer (42) and the lead-out portion (5) are all disposed on at least a part of the surface of the conductive resistor (71). Along the thickness direction (Z) of the pressure sensor chip, a part of the lead-out portion (5) is located on one side of the second insulating layer (41) and the third insulating layer (42).

4. The pressure sensor chip according to claim 3, wherein: Along the thickness direction (Z) of the pressure sensor chip, the second insulating layer (41), the third insulating layer (42), the lead-out portion (5) and the bonding portion (6) are all located on one side of the conductive resistor (71); the lead-out portion (5) is closer to the first insulating layer (2) than a part of the bonding portion (6); The first insulating layer (2), the second insulating layer (41) and the third insulating layer (42) are selected from silicon nitride or silicon dioxide; the lead-out portion (5) is selected from at least one of aluminum, copper and aluminum-copper alloy.

5. The pressure sensor chip according to any one of claims 2-4, wherein: The wire portion (73) includes a first wire portion (731), a second wire portion (732), a third wire portion (733), a fourth wire portion (734) and a fifth wire portion (735); the first wire portion (731), the second wire portion (732), the third wire portion (733), the fourth wire portion (734) and the fifth wire portion (735) are an integral part; The second wire portion (732) is inclined with respect to the first wire portion (731), and the fourth wire portion (734) is inclined with respect to the fifth wire portion (735); The first wire portion (731) and the second wire portion (732) are both connected to the sensitive resistor (3); the third wire portion (733) is connected to at least a part of the first insulating layer (2); the fourth wire portion (734) and the fifth wire portion (735) are both connected to the conductive resistor (71), and the third wire portion (733) connects the sensitive resistor (3) and the conductive resistor (71) respectively.

6. The pressure sensor chip according to claim 5, wherein: Along the thickness direction (Z), the fifth wire portion (735) is disposed on at least the surface of the conductive resistor (71). Defining the direction perpendicular to the thickness direction (Z) as the horizontal direction (X), along the horizontal direction (X), there is a spacing between the fifth wire portion (735) and the bonding portion (6).

7. The pressure sensor chip according to claim 6, wherein: The pressure sensor chip includes at least two of the sensitive resistors (3), and there is a spacing between adjacent two of the sensitive resistors (3); At least a part of the first wire portion (731), at least a part of the second wire portion (732), at least a part of the third wire portion (733), at least a part of the fourth wire portion (734), and at least a part of the fifth wire portion (735) are exposed to the first cavity (8); At least a part of the sensitive resistor (3) and the conductive resistor (71) are exposed to the first cavity (8).

8. The pressure sensor chip according to claim 7, characterized in that: Both the conductive resistor (71) and the sensitive resistor (3) are silicon doped with boron, and the concentration of boron doped in the conductive resistor (71) is greater than the concentration of boron doped in the sensitive resistor (3); The lead-out portion (5), the first wire portion (731), the second wire portion (732), the third wire portion (733), the fourth wire portion (734), and the fifth wire portion (735) are each selected from at least one of aluminum, copper, and aluminum-copper alloy; the inside of the first cavity (8) is a vacuum.

9. The pressure sensor chip according to claim 1, characterized in that: The pressure sensor chip has a second cavity (9), at least a part of the second cavity (9) is located in the substrate (1), at least a part of the pressure-sensitive film (11) is exposed to the second cavity (9), and the second cavity (9) communicates with the outside of the pressure sensor chip.

10. A manufacturing method of a pressure sensor chip, characterized in that: The manufacturing method includes the following steps: Providing a substrate (1) and an isolation layer (21), depositing the isolation layer (21) on at least a part of the surface of the substrate (1), and depositing a sensitive resistor (3) on at least a part of the surface of the isolation layer (21), and the isolation layer (21) is located between the sensitive resistor (3) and the substrate (1); Providing a bonding portion (6), connecting the substrate (1) and the bonding portion (6) to form a first cavity (8); Providing a lead-out portion (5), connecting the lead-out portion (5) and the substrate (1), defining the thickness direction (Z) perpendicular to the pressure sensor chip as the horizontal direction (X), and along the horizontal direction (X), the lead-out portion (5) is located on one side of the bonding portion (6).

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