Anti-reflection wear-resistant structure and preparation method thereof

Abstract

The invention provides an anti-reflection wear-resistant structure and a preparation method thereof. The preparation method comprises the following steps: cleaning a substrate, carrying out spin coating treatment on the surface of the substrate to obtain a first substrate with a polymer layer, and carrying out photoetching treatment on the first substrate to obtain a photoetched substrate; performing dry etching on the photoetched substrate to obtain a frame substrate with a micron frame, and performing spin coating treatment on the surface of the frame substrate again to obtain a second substrate with a polymer layer; performing dry etching on the second substrate to obtain a third substrate with a nanofiber structure, and performing dry etching on the third substrate again to obtain a target substrate with a nanocone structure; and rinsing the nanofiber structure of the target substrate based on a buffer oxide to obtain the nanocone array structure.

Description

Technical Field

[0001] The present invention relates to the technology of making antireflection surfaces, and in particular to an antireflection and wear-resistant structure and a preparation method thereof. Background Art

[0002] Traditional methods of depositing one or more antireflection films have problems such as adhesion between film layers, mismatch in thermal expansion between the film layer and the substrate material, which causes the film layer to expand and fall off, and limited spectral range, limitations of film layer materials, and problems of film density and uniformity; inspired by "moth eyes", biomimetic structures have been established on the substrate, such as: nano-round holes, nano-cylinders, nano-cones; however, traditional preparation methods such as nanosphere lithography, interference lithography, and electron beam etching have problems of complex processes, long time consumption, high cost, low efficiency, and difficult regulation of morphology and structure; there is also a problem that cannot be ignored. Nanostructures are often relatively fragile after formation and are easily damaged by the external environment, such as friction, particle impact, etc., resulting in a significant reduction in the stability and durability of the structure. The exposed nanostructures are prone to wear and fracture under external forces, seriously affecting their performance and application effects.

[0003] Therefore, how to achieve the organic combination of the micron framework and the nanostructure, thereby enhancing the protection of the nanostructure and improving the transmittance, has become an urgent problem to be solved. Summary of the Invention

[0004] An embodiment of the present invention provides an antireflection and wear-resistant structure and a preparation method thereof, which can achieve the organic combination of the micron framework and the nanostructure, thereby enhancing the protection of the nanostructure and improving the transmittance.

[0005] In a first aspect of an embodiment of the present invention, there is provided an antireflection and wear-resistant structure and a preparation method thereof, including: Clean the substrate, perform spin coating on the surface of the substrate to obtain a first substrate with a polymer layer, and perform photolithography on the first substrate to obtain a photolithographed substrate; Perform dry etching on the photolithographed substrate to obtain a frame substrate with a micron framework, and perform spin coating on the surface of the frame substrate again to obtain a second substrate with a polymer layer; Perform dry etching on the second substrate to obtain a third substrate with a nanofiber structure, and perform dry etching on the third substrate again to obtain a target substrate with a nano-cone structure; Based on buffered oxide rinse the nanofiber structure of the target substrate to obtain a nano-cone array structure.

[0006] Optionally, in a possible implementation manner of the first aspect, in the step of cleaning the substrate, it specifically includes: Removing metal ions and particulate contaminants on the corresponding substrate surface of the substrate based on an organic solvent and an RCA cleaning process, where the substrate includes at least a silicon carbide substrate, a silicon substrate, a sapphire substrate, and a quartz substrate; Optionally, in a possible implementation manner of the first aspect, in the step of spin-coating the surface of the substrate to obtain a first substrate with a polymer layer, it specifically includes: Spin-coating the surface of the substrate to obtain a first substrate with a polymer layer, where the material of the polymer layer includes at least positive photoresist, negative photoresist, polyimide, polyethylene, polycarbonate, polydimethylsiloxane, or parylene.

[0007] Optionally, in a possible implementation manner of the first aspect, in the step of dry-etching the second substrate to obtain a third substrate with a nanofiber structure, it specifically includes: Bombarding the polymer layer on the substrate with oxygen and argon plasmas successively or simultaneously to form a nanofiber structure on the substrate.

[0008] Optionally, in a possible implementation manner of the first aspect, in the step of dry-etching the third substrate again to obtain a target substrate with a nanocone structure, it includes: Using the nanofiber structure as an etching nano-mask, and performing secondary etching on the silicon carbide substrate based on a mixed gas of sulfur hexafluoride, oxygen, and argon to generate a nanocone structure.

[0009] Optionally, in a possible implementation manner of the first aspect, in the step of dry-etching the third substrate again to obtain a target substrate with a nanocone structure, it includes: Using the nanofiber structure as an etching nano-mask, and performing secondary etching on the quartz substrate based on a mixed gas of trifluoromethane and argon to generate a nanocone structure.

[0010] Optionally, in a possible implementation manner of the first aspect, it further includes: Receiving the preparation diameter and preparation height of the nanocones in the nanocone array structure input by the preparation end, and retrieving reference preparation parameters, where the reference preparation parameters include the reference bombardment density of the plasma, and the reference diameter and reference height corresponding to the reference duration of the reference bombardment density; Obtaining a diameter ratio coefficient based on the ratio of the preparation diameter to the reference diameter, and obtaining a height ratio coefficient based on the ratio of the preparation height to the reference height; Adjusting the reference duration according to the diameter ratio coefficient and the height ratio coefficient to obtain a preparation duration; Sending the preparation duration to the preparation end.

[0011] Optionally, in a possible implementation of the first aspect, the preparation duration is obtained through the following formula: where is the preparation duration, is the reference duration, is the preparation diameter, is the reference diameter, is the diameter weight value, is the preparation height, is the reference height, is the height weight value.

[0012] Optionally, in a possible implementation of the first aspect, it further includes: Receiving the active adjustment durations of each preparation end for the same-size input, and statistically obtaining the total preparation duration by aggregating the active adjustment durations of each said preparation end; Determining the preparation end corresponding to the input active adjustment duration as the input end, and obtaining the quantity of the said input end to get the total quantity; Obtaining the average adjustment duration according to the ratio of the total preparation duration to the total quantity; When it is determined that the average adjustment duration is greater than the preparation duration, obtaining an increase adjustment value according to the difference between the average adjustment duration and the preparation duration; Increasingly adjusting the diameter weight value according to the increase adjustment value to obtain an increased-adjusted diameter weight value; Increasingly adjusting the height weight value based on the increase adjustment value to obtain an increased-adjusted height weight value; When it is determined that the average adjustment duration is less than the preparation duration, obtaining a decrease adjustment value according to the difference between the preparation duration and the average adjustment duration; Decreasingly adjusting the diameter weight value according to the decrease adjustment value to obtain a decreased-adjusted diameter weight value; Decreasingly adjusting the height weight value based on the decrease adjustment value to obtain a decreased-adjusted height weight value.

[0013] Optionally, in a possible implementation of the first aspect, it further includes: Obtaining the increased-adjusted diameter weight value and height weight value through the following formula: where is the increased-adjusted diameter weight value, is the average adjustment duration, is the adjustment constant value, is the increased-adjusted height weight value; Obtaining the decreased-adjusted diameter weight value and height weight value through the following formula: Among them, to reduce the adjusted diameter weight value, to reduce the adjusted height weight value.

[0014] The beneficial effects of the present invention are as follows: 1. The present invention realizes the optimization of the structure and the improvement of the performance. Specifically, the micron framework can reduce the Fresnel reflection at the interface, improve the transmittance of the optical window, and at the same time avoid the removal of the fragile nanostructure by an object larger than the framework size. In addition, the integrated interconnection characteristic of the micron framework and the nanocone structure makes the whole structure more stable, further enhancing the mechanical durability of the structure, making the whole structure more stable, and being able to maintain the integrity of the structure under physical impact and wear, thereby extending the service life of the optical device.

[0015] 2. The present invention uses silicon carbide as the antireflection substrate material. Silicon carbide has good transmittance in the infrared band, which enables silicon carbide to be used to manufacture infrared windows, lenses and optical elements, and has high thermal conductivity, which helps to maintain the stability and performance of the window material in a high-temperature environment. At the same time, the microstructure processing technology of silicon carbide can be compatible with CMOS technology, which helps to reduce the processing cost and improve the efficiency and reliability of device processing.

[0016] 3. The present invention adds an intelligent learning and adjustment process. When the operator finds that the preparation time is too long or too short, the weight value can be automatically adjusted by autonomous learning according to the actively adjusted time input by the operator, so that the weight value after learning and adjustment meets the actual preparation requirements.

[0017] 4. The present invention uses a micron framework to provide additional mechanical support and protection for the nanocone array, which helps to improve the stability and durability of the overall structure. This design makes the nanocone structure not easily worn and broken when subjected to friction or particle impact, thereby maintaining the performance, and at the same time avoiding the removal of the fragile nanostructure by an object larger than the framework size. The design of this surface framework significantly strengthens the strength of the superhydrophobic surface. Even after being worn by sandpaper and a sharp steel blade, the superhydrophobicity of the surface can still remain unchanged. Description of the Drawings

[0018] Figure 1 is a flowchart of an antireflection and wear-resistant structure and a preparation method thereof provided by the present invention; Figure 2 is a schematic diagram of spin-coating a polymer layer on a first substrate provided by the present invention; Figure 3 is a schematic diagram of performing photolithography on a first substrate provided by the present invention; Figure 4Schematic diagram of a dry etching micron framework provided by the present invention; Figure 5 Schematic diagram of a second substrate spin-coated with a polymer layer provided by the present invention; Figure 6 Schematic diagram of a nanofiber structure provided by the present invention; Figure 7 Schematic diagram of nanofibers obtained by treating polyimide with argon for 30 minutes provided by the present invention; Figure 8 Schematic diagram of nanofibers obtained by treating polyimide with argon for 60 minutes provided by the present invention; Figure 9 Schematic diagram of a dry etching third substrate provided by the present invention; Figure 10 Schematic diagram of a nanofiber-nanocone bilayer structure obtained by etching using nanofibers formed by treating polyimide with argon plasma for 30 minutes as a mask provided by the present invention; Figure 11 Schematic diagram of a nanofiber-nanocone bilayer structure obtained by etching using nanofibers formed by treating polyimide with argon plasma for 60 minutes as a mask provided by the present invention; Figure 12 Schematic diagram of a nanofiber structure rinsed with a buffered oxide etchant provided by the present invention; Figure 13 Schematic diagram of an array of nanocone structures obtained by rinsing a nanofiber-nanocone bilayer structure formed by treating polyimide with argon plasma for 30 minutes with a buffered oxide etchant provided by the present invention; Figure 14 Schematic diagram of an array of nanocone structures obtained by rinsing a nanofiber-nanocone bilayer structure formed by treating polyimide with argon plasma for 60 minutes with a buffered oxide etchant provided by the present invention. Detailed implementation manners

[0019] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0020] The terms "first", "second", "third", "fourth", etc. (if any) in the description, claims and the above-mentioned drawings of the present invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein.

[0021] It should be understood that in various embodiments of the present invention, the magnitude of the serial numbers of the various processes does not mean the sequence of execution, and the execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.

[0022] It should be understood that in the present invention, "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0023] It should be understood that in the present invention, "a plurality of" means two or more. "And / or" is merely a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist simultaneously, and B exists alone. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "Including A, B and C", "including A, B, C" means that all of A, B and C are included, "including A, B or C" means that one of A, B and C is included, and "including A, B and / or C" means that any one or any two or all three of A, B and C are included.

[0024] It should be understood that in the present invention, "B corresponding to A", "B corresponding to A relatively", "A corresponding to B relatively" or "B corresponding to A relatively" means that B is associated with A, and B can be determined according to A. Determining B according to A does not mean determining B only according to A, and B can also be determined according to A and / or other information. The matching of A and B means that the similarity between A and B is greater than or equal to a preset threshold.

[0025] Depending on the context, as used herein, "if" can be interpreted as "when", "when", "in response to a determination" or "in response to a detection".

[0026] The technical solutions of the present invention will be described in detail below with specific embodiments. These specific embodiments below can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0027] The present invention provides an anti-reflection and wear-resistant structure and a preparation method thereof. As Figure 1 shown, it includes steps S1 - S4: S1. Clean the substrate, perform spin coating on the surface of the substrate to obtain a first substrate with a polymer layer, and perform photolithography on the first substrate to obtain the photolithographed substrate.

[0028] In the step of cleaning the surface of the substrate, it specifically includes: Based on organic solvents and RCA cleaning process, remove metal ions and particulate contaminants on the corresponding surface of the substrate. The substrate includes at least a silicon carbide substrate, a silicon substrate, a sapphire substrate or a quartz substrate.

[0029] It should be noted that due to the good transparency of the silicon carbide substrate, especially in the infrared region below 5 μm, this enables silicon carbide to be used for manufacturing infrared windows, lenses and optical components. And the microstructure processing technology of silicon carbide materials can be compatible with CMOS technology, which helps to reduce processing costs and improve the efficiency and reliability of device processing. Therefore, the present invention preferably uses a silicon carbide substrate.

[0030] In addition to the silicon carbide substrate or quartz substrate, the present invention can also be prepared on common processing substrates such as silicon and sapphire.

[0031] The present invention uses organic solvents and RCA cleaning process to remove metal ions and particulate contaminants on the substrate surface, which is convenient for subsequent photoresist adsorption.

[0032] Among them, RCA is a typical and still the most commonly used wet chemical cleaning method. Organic solvents are a class of organic substances that are liquid at room temperature. They can dissolve or dilute other organic substances and have good volatility.

[0033] In the step of performing spin coating on the surface of the substrate to obtain a first substrate with a polymer layer, it specifically includes: The material of the polymer layer includes at least positive photoresist, negative photoresist, polyimide, polyethylene, polycarbonate, polydimethylsiloxane or parylene. The thickness of the polymer layer is 1 - 20 μm. During the implementation process, the polymer layer can be formed on the substrate by means such as spraying, spin coating, dip coating and electrodeposition.

[0034] As Figure 2As shown, the present invention can use the method of static spin coating to cover AZ6130 photoresist on the substrate to form a polymer layer. Before spin coating, a baking process can be carried out. The cleaned substrate wafer can be placed on a hot plate for baking. The preferred baking temperature is 100 °C, and the preferred baking time is 1 - 4 min. During spin coating, the low speed and high speed of the spin coater are 200 rpm and 3000 rpm respectively, and the spin coating times are 3 s and 60 s respectively, to obtain a polymer layer with a preferred thickness of 2.5 μm.

[0035] In the step of performing photolithography on the first substrate to obtain the photolithographed substrate, it specifically includes: As Figure 3 shown, the first substrate with the polymer layer formed is subjected to photolithography. First, exposure is carried out with an exposure dose of 100 - 300 mJ / cm², and then development is carried out. The developer ratio is AZ400K:H2O = 1:6, and the development time is 40 - 60 s. In order to eliminate the standing wave effect and improve the structural stability of the photoresist, finally, hard baking is carried out with a hot plate baking temperature of 120 °C and a baking time of 5 - 15 min.

[0036] S2. The photolithographed substrate is subjected to dry etching to obtain a frame substrate with a micron frame, and the surface of the frame substrate is spin-coated again to obtain a second substrate with a polymer layer.

[0037] As Figure 4 shown, the present invention can use dry etching technology to etch a micron frame on the substrate surface. Among them, the height of the micron frame can be 500 nm - 2 μm, and parameters can be adjusted to make the etching process surface smooth to ensure the quality of subsequent processes. The etching gas used for etching the quartz substrate is a mixed gas of trifluoromethane and argon, and the flow rates can be 50 - 75 and 3 - 5 sccm respectively, and the etching time is 3 - 12 min. The etching gas used for etching the silicon carbide substrate is a mixed gas of carbon tetrafluoride and oxygen, and the flow rates are 90 - 110 and 10 - 25 sccm respectively, and the etching time is 8 - 30 min.

[0038] In the step of spin-coating the surface of the frame substrate again to obtain a second substrate with a polymer layer, it specifically includes: The material of the polymer layer includes at least positive photoresist, negative photoresist, polyimide, polyethylene, polycarbonate, polydimethylsiloxane or parylene. The thickness of the polymer layer is 1 - 20 μm. During the implementation process, the polymer layer can be formed on the substrate by spraying, spin coating, dip coating, electrodeposition method, etc.

[0039] As Figure 5As shown, the present invention can form a polymer layer such as polyimide on a substrate by a static spin-coating method. Before spin-coating, a baking process can be carried out. The above-mentioned frame substrate can be placed on a hot plate for baking. The preferred baking temperature is 180°C, and the preferred baking time is 20 min. During spin-coating, the low speed and high speed of the spin coater can be 500 - 750 rpm and 2000 - 2500 rpm respectively, and the spin-coating times are 10 s and 30 s respectively, to obtain a polymer layer with a preferred thickness of 3 μm. Then a post-baking treatment is carried out. The preferred baking temperature is 180°C, and the preferred baking time is 20 min.

[0040] S3. Dry-etch the second substrate to obtain a third substrate with a nanofiber structure, and then dry-etch the third substrate again to obtain a target substrate with a nanocone structure.

[0041] In the step of dry-etching the second substrate to obtain a third substrate with a nanofiber structure, it specifically includes: The present invention can use oxygen and argon plasmas to bombard the polymer layer on the substrate successively or simultaneously to form a nanofiber structure. As Figure 6 shown, the height of the nanofibers is about 1 - 3 μm.

[0042] Among them, the oxygen flow rate is 120 sccm, the bombardment time is 10 - 30 min, the argon flow rate is 100 sccm, the bombardment time is 5 - 60 min, the chamber pressure is 5 Pa, and the chamber power is 200 W.

[0043] For example, referring to Figure 7 is a nanofiber structure diagram obtained after treating polyimide with argon plasma for 30 minutes.

[0044] Referring to Figure 8 is a nanofiber structure diagram obtained after treating polyimide with argon plasma for 60 minutes.

[0045] It should be noted that the present invention can use at least silicon carbide, quartz, sapphire, and silicon as the substrates for manufacturing.

[0046] In this embodiment, the present invention can use a silicon carbide substrate for etching.

[0047] Dry-etch the third substrate again to obtain a target substrate with a nanocone structure. including: As Figure 9As shown, using the nanofiber structure as an etching nano-mask, the third substrate is dry-etched again based on a mixed gas of sulfur hexafluoride, oxygen, and argon to generate a nano-cone structure, and the height of the nano-cones is 200 - 1000 nm. Among them, the etching gas is selected as a mixed gas of sulfur hexafluoride, oxygen, and argon, with flow rates of 50, 10, and 10 sccm respectively, the chamber pressure is 5 Pa, the chamber power is 200 w, and the etching time is 5 - 60 min.

[0048] For example, see Figure 10 As shown, a nanofiber-nano-cone bilayer structure obtained by etching using the nanofibers formed by treating polyimide with argon plasma for 30 min as a mask.

[0049] See Figure 11 As shown, a nanofiber-nano-cone bilayer structure obtained by etching using the nanofibers formed by treating polyimide with argon plasma for 60 min as a mask.

[0050] In this embodiment, the present invention can use a quartz substrate for etching.

[0051] Dry-etch the third substrate again to obtain a target substrate with a nano-cone structure, including: Using the nanofiber structure as an etching nano-mask, the third substrate is dry-etched again based on a mixed gas of trifluoromethane and argon to generate a nano-cone structure, and the height of the nano-cones is 100 - 600 nm. Among them, the etching gas is selected as a mixed gas of sulfur hexafluoride, trifluoromethane, and helium, with flow rates of 5, 32, and 150 sccm respectively, the chamber pressure is 1850 mTorr, the chamber power is 200 w, and the etching time is 3 - 20 min.

[0052] S4. Rinse the nanofiber structure on the surface of the substrate based on a buffered oxide etchant to obtain a nano-cone array structure.

[0053] It can be understood that, as Figure 12 shown, the present invention will use a buffered oxide etchant (BOE) to rinse the nano-forest structure for 3 - 15 s to remove the nanofibers on the silicon carbide / quartz substrate, thereby preparing a one-dimensional quasi-ordered silicon carbide / quartz nano-cone array structure.

[0054] For example, see Figure 13 Shown is a nano-cone array structure of silicon carbide after removing the nanofibers obtained by rinsing a nanofiber-nano-cone bilayer structure formed by treating polyimide with Ar plasma for 30 min with a buffered oxide etchant (BOE) for 5 s.

[0055] See Figure 14Shown is a nano - cone array structure of silicon carbide after washing away nanofibers, obtained by rinsing a double - layer structure of nanofibers - nano - cones formed by treating polyimide with Ar plasma for 60 min with buffered oxide etchant (BOE) for 5 s.

[0056] Based on the above - mentioned embodiments, it further includes: Receiving the preparation diameter and preparation height of the nano - cones in the nano - cone array structure input by the preparation end, and retrieving the reference preparation parameters. The reference preparation parameters include the reference bombardment density of the plasma, as well as the reference diameter and reference height corresponding to the reference duration of the reference bombardment density.

[0057] It is not difficult to understand that the present invention can precisely control the size and shape of the nano - cones by adjusting the parameters in the dry etching process. For example, at a fixed plasma density, the etching time can be adjusted to achieve this.

[0058] Among them, the preparation end is the mobile terminal corresponding to the person who prepares the nano - cone array structure. Therefore, the server will receive the preparation diameter and preparation height sent by the preparation end, and will retrieve the preset reference preparation parameters. The reference preparation parameters include the reference bombardment density of the plasma, as well as the reference diameter and reference height corresponding to the reference duration of the reference bombardment density. That is, at a fixed plasma density and a fixed bombardment duration, the diameter and height of the generated nano - cone array structure are used as the corresponding reference diameter and reference height.

[0059] According to the ratio of the preparation diameter to the reference diameter, a diameter ratio coefficient is obtained, and based on the ratio of the preparation height to the reference height, a height ratio coefficient is obtained.

[0060] Adjust the reference duration according to the diameter ratio coefficient and the height ratio coefficient to obtain the preparation duration.

[0061] The preparation duration is obtained through the following formula Among them, is the preparation duration, is the reference duration, is the preparation diameter, is the reference diameter, is the diameter weight value, is the preparation height, is the reference height, is the height weight value.

[0062] It is not difficult to understand that is the diameter ratio coefficient, is the height ratio coefficient, and the diameter ratio coefficient and the preparation duration Is directly proportional to the height ratio coefficient And the preparation duration Is directly proportional, where the height weight value And the diameter weight value Can be a weight value preset artificially.

[0063] It can be understood that when the preparation height And the preparation diameter Are larger, the corresponding preparation duration Will be longer. It is not difficult to understand that the larger the height and diameter of the nanofiber structure to be prepared, the longer the corresponding bombardment duration under the same plasma density, and vice versa, the smaller the height and diameter, the shorter the corresponding bombardment duration.

[0064] Send the preparation duration to the preparation end.

[0065] Based on the above embodiments, it further includes: Receive the active adjustment durations of each preparation end for the same size input, and statistically calculate the total preparation duration by aggregating the active adjustment durations of each said preparation end.

[0066] It is not difficult to understand that after the preparation is completed, there will be a certain error in the prepared nano-cone array structure, and there may be an excessive or insufficient height and diameter. Therefore, the personnel can actively input an active adjustment duration that conforms to the actual situation for the preparation.

[0067] Therefore, the subsequent server will make adjustments based on the average value of the active adjustment durations actively input by the personnel, that is, subsequently, the adjustment durations input by different personnel for the same size (height and diameter) will be statistically averaged, so as to make a more accurate adjustment.

[0068] Determine the preparation end corresponding to the input active adjustment duration as the input end, and obtain the quantity of the said input end to get the total quantity.

[0069] It is not difficult to understand that the quantity of the preparation ends that input the active adjustment duration will be statistically calculated to obtain the total quantity.

[0070] According to the ratio of the total preparation duration to the total quantity, obtain the average adjustment duration.

[0071] It is not difficult to understand that the average adjustment duration is obtained according to the ratio of the total preparation duration to the total quantity, that is, the average adjustment duration corresponding to the same size (the same height and diameter).

[0072] When it is determined that the active adjustment duration is greater than the preparation duration, obtain the increased adjustment value according to the difference between the active adjustment duration and the preparation duration.

[0073] It is understandable that when the server determines that the active adjustment duration is greater than the preparation duration, an increase adjustment value is obtained according to the difference between the active adjustment duration and the preparation duration.

[0074] It is not difficult to understand that the actual preparation duration by the personnel is relatively short. Therefore, when a relatively long active adjustment duration that conforms to the actual situation is input, an increase adjustment value will be obtained later according to the difference between the active adjustment duration and the preparation duration.

[0075] The diameter weight value is increased and adjusted according to the increase adjustment value to obtain an increased and adjusted diameter weight value.

[0076] It is not difficult to understand that the larger the increase adjustment value, the longer the duration that needs to be increased for the corresponding preparation duration during the subsequent automatic operation of the server. The diameter weight value is increased and adjusted based on the increase adjustment value, so as to obtain an increased and adjusted diameter weight value.

[0077] The height weight value is increased and adjusted based on the increase adjustment value to obtain an increased and adjusted height weight value.

[0078] It is not difficult to understand that the larger the increase adjustment value, the longer the duration that needs to be increased for the corresponding preparation duration during the subsequent automatic operation of the server. The height weight value is increased and adjusted based on the increase adjustment value, so as to obtain an increased and adjusted height weight value.

[0079] It is understandable that the present invention will automatically train the height weight value and the diameter weight value according to the active adjustment duration input by the personnel.

[0080] The increased and adjusted diameter weight value and height weight value are obtained through the following formula. Among them, is the increased and adjusted diameter weight value, is the average adjustment duration, is the adjustment constant value, is the increased and adjusted height weight value.

[0081] It is not difficult to understand that is the increase adjustment value, and the increase adjustment value The larger it is, the corresponding increased and adjusted diameter weight value and the increased and adjusted height weight value The larger they are, and the adjustment constant value J can be a value preset by the person.

[0082] When it is determined that the active adjustment duration is less than the preparation duration, a decrease adjustment value is obtained according to the difference between the preparation duration and the active adjustment duration.

[0083] It can be understood that when the server determines that the active adjustment duration is less than the preparation duration, a reduction adjustment value is obtained according to the difference between the preparation duration and the active adjustment duration.

[0084] It shows that the preparation duration is relatively long, and it is considered that a shorter active adjustment duration should be set.

[0085] The diameter weight value is reduced and adjusted according to the reduction adjustment value to obtain a reduced and adjusted diameter weight value.

[0086] The height weight value is increased and adjusted based on the reduction adjustment value to obtain a reduced and adjusted height weight value.

[0087] The reduced and adjusted diameter weight value and height weight value are obtained through the following formula. Where, is the reduced and adjusted diameter weight value. is the reduced and adjusted height weight value.

[0088] It is not difficult to understand that is the reduction adjustment value, and the reduction adjustment value is larger, and the corresponding reduced and adjusted diameter weight value and the reduced and adjusted height weight value are smaller. The adjustment constant value J can be a value set artificially in advance.

[0089] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An anti-reflective wear-resistant structure and a preparation method thereof, characterized in that: include: Cleaning the substrate, subjecting the surface of the substrate to a coating treatment to obtain a first substrate having a polymer layer, and performing a photolithography treatment on the first substrate to obtain a photolithographic substrate; Performing dry etching on the photolithographic substrate to obtain a frame substrate having a micron frame, and performing a coating treatment on the surface of the frame substrate again to obtain a second substrate having a polymer layer; performing dry etching on the second substrate to obtain a third substrate having a nanofiber structure, and performing dry etching on the third substrate again to obtain a target substrate having a nanocone structure; The nanofiber structure of the target substrate is rinsed based on buffered oxide to obtain a nanocone array structure.

2. The method according to claim 1, characterized in that The step of cleaning the substrate specifically includes: Metal ions and particle contaminants on the surface of the substrate corresponding to the substrate are removed based on an organic solvent and RCA cleaning process, and the substrate at least includes a silicon carbide substrate, a silicon substrate, a sapphire substrate or a quartz substrate.

3. The method according to claim 1, characterized in that The step of subjecting the surface of the substrate to a coating treatment to obtain a first substrate having a polymer layer specifically includes: The surface of the substrate is subjected to a photoresist treatment to obtain a first substrate having a polymer layer, wherein the material of the polymer layer at least includes positive photoresist, negative photoresist, polyimide, polyethylene, polycarbonate, polydimethylsiloxane or polyparaxylene.

4. The method according to claim 3, characterized in that The step of dry-etching the second substrate to obtain a third substrate having a nanofiber structure specifically includes: Oxygen and argon plasma are used to bombard the polymer layer on the second substrate successively or simultaneously to form a nanofiber structure on the second substrate.

5. The method according to claim 3, characterized in that: The step of dry-etching the third substrate again to obtain a target substrate having a nanocone structure includes: The nanofiber structure is used as an etching nanomask, and the silicon carbide substrate is subjected to secondary etching based on a mixed gas of sulfur hexafluoride, oxygen and argon to generate a nanocone structure.

6. The method according to claim 3, characterized in that The step of dry-etching the third substrate again to obtain a target substrate having a nanocone structure comprises: The nanofiber structure is used as an etching nanomask, and the quartz substrate is subjected to secondary etching based on a mixed gas of trifluoromethane and argon to generate a nanocone structure.

7. The method according to claim 1, characterized in that Also includes: Receiving the preparation diameter and preparation height of the nanocones in the nanocone array structure input by the preparation end, and calling the reference preparation parameters, wherein the reference preparation parameters include the reference bombardment density of the plasma, and the reference diameter and reference height corresponding to the reference bombardment density for a reference time; According to the ratio of the preparation diameter to the reference diameter, a diameter ratio is obtained; based on the ratio of the preparation height to the reference height, a height ratio is obtained; The reference duration is adjusted according to the diameter proportion coefficient and the height proportion coefficient to obtain a preparation duration; The preparation time is sent to the preparation end.

8. The method according to claim 6, characterized in that The preparation time is obtained by the following formula: in, For preparation time, is the base duration, To prepare the diameter, is the base diameter, is the diameter weight value, To prepare the height, is the base height, is the height weight value.

9. The method according to claim 7, characterized in that: Also includes: Receiving active adjustment time of each preparation end for the same size input, and counting the active adjustment time of each preparation end to obtain a total preparation time; Determine the preparation end corresponding to the input active adjustment duration as the input end, obtain the number of the input ends, and obtain the total number; Obtaining an average adjustment time according to a ratio of the total preparation time to the total quantity; When it is determined that the average adjustment time is greater than the preparation time, an increase adjustment value is obtained according to a difference between the average adjustment time and the preparation time; According to the increase adjustment value, the diameter weight value is increased and adjusted to obtain the increased and adjusted diameter weight value; Based on the increase adjustment value, the height weight value is increased and adjusted to obtain the increased and adjusted height weight value; When it is determined that the average adjustment time is less than the preparation time, a reduction adjustment value is obtained according to a difference between the preparation time and the average adjustment time; Performing reduction adjustment on the diameter weight value according to the reduction adjustment value to obtain a diameter weight value after reduction adjustment; The height weight value is reduced and adjusted based on the reduction adjustment value to obtain the height weight value after reduction and adjustment.

10. The method according to claim 8, characterized in that Also includes: The diameter weight value and height weight value after the increase and adjustment are obtained through the following formula: in, To increase the adjusted diameter weight value, To average the adjustment time, To adjust the constant value, To increase the adjusted height weight value; The diameter weight value and height weight value after reduction and adjustment are obtained by the following formula: in, To reduce the adjusted diameter weight value, To reduce the adjusted height weight value.

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