Method and system for adjusting molded surface state of wafer bearing table, thinning equipment and processing method

Abstract

The invention discloses a method and a system for adjusting the molded surface state of a wafer bearing table, thinning equipment and a processing method. The adjusting method comprises the following steps: S1, determining whether the molded surface state of the wafer bearing table which is located at a first position and rotates meets the requirement or not according to data measured by a first height measurement assembly; s2, if not, acquiring a first change value of data measured by the first height measurement assembly; s3, rotating the wafer bearing table to a second position; s4, acquiring a second change value of the data measured by the second height measurement assembly; and S5, according to the first change value and the second change value, calculating adjusting quantities required by the first adjusting device and the second adjusting device, and adjusting the first adjusting device and the second adjusting device according to the adjusting quantities. According to the invention, the detection of the molded surface state can be realized under the condition that an additional electronic level meter is not added, and when the abnormality is identified, the adjusting quantity of the first adjusting device and the second adjusting device is calculated according to the data measured at the two different positions of the wafer bearing table, so that the calculation precision of the adjusting quantity is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a method and system for adjusting the surface state of a susceptor, a thinning device, and a processing method. Background Art

[0002] When thinning a wafer, the wafer is fixed on a susceptor and then corresponding processing is carried out. The surface state of the susceptor has a significant impact on the thinning quality. If the surface of the susceptor is in an inclined state during thinning, the TTV (Total Thickness Variation of the wafer) of the finally obtained wafer is difficult to meet customer requirements.

[0003] Therefore, it is necessary to detect and adjust the surface state of the susceptor in a timely manner. The Chinese utility model patent with the application publication number CN207542222U discloses a leveling structure and a leveling method, which are realized by setting an electronic level on the table surface. For other types of thinning devices, additional level detection devices need to be added to the existing structure, increasing the equipment cost. Summary of the Invention

[0004] The purpose of the present invention is to solve the above problems existing in the prior art, and provide a method and system for adjusting the surface state of a susceptor, a thinning device, and a processing method.

[0005] The purpose of the present invention is achieved by the following technical solutions:

[0006] A method for adjusting the surface state of a susceptor includes the following steps:

[0007] S1. Determine whether the surface state of the susceptor at the first position and rotating itself meets the requirements according to the data measured by the first height measuring component, and the first measuring rod of the first height measuring component is carried at the first detection point on the susceptor at the first position;

[0008] S2. When it is determined that the surface state of the susceptor does not meet the requirements, obtain the first change value of the data measured by the first height measuring component;

[0009] S3. Rotate the susceptor to the second position;

[0010] S4. Rotate the susceptor at the second position by itself and obtain the second change value of the data measured by the second height measuring component, and the second measuring rod of the second height measuring component is carried at the second detection point on the susceptor at the second position;

[0011] S5. Calculate the first adjustment amount that the first adjustment device connected to the susceptor needs to adjust and calculate the second adjustment amount that the second adjustment device connected to the susceptor needs to adjust according to the first change value and the second change value;

[0012] S6. Control the first adjustment device to make adjustments according to the first adjustment amount and control the second adjustment device to make adjustments according to the second adjustment amount.

[0013] Preferably, in the method for adjusting the surface state of the wafer stage, the first telescopic shaft of the first adjustment device, the second telescopic shaft of the second adjustment device, and the fixed support points for supporting the wafer stage are distributed in an equilateral triangle, and the equilateral triangle is concentric with the wafer stage.

[0014] Preferably, in the method for adjusting the surface state of the wafer stage, the first adjustment amount is determined according to the following formula:

[0015]

[0016] where a is the first adjustment amount, P 1 is the first change value, P 2 is the second change value, k 1 is the distance between the axis of the first probe and the first virtual line, and the first virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the first telescopic shaft; k 2 is the distance between the axis of the second probe and the first virtual line; k 3 is the distance between the axis of the first probe and the second virtual line, and the second virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the second telescopic shaft; k 4 is the distance between the axis of the second probe and the second virtual line; R is the diameter of the circumscribed circle of the equilateral triangle where the axes of the first telescopic shaft, the second telescopic shaft, and the center of the fixed support point are located.

[0017] Preferably, in the method for adjusting the surface state of the wafer stage, the second adjustment amount is determined according to the following formula:

[0018]

[0019] where b is the second adjustment amount, P 1 is the first change value, P 2 is the second change value, k 1 is the distance between the axis of the first probe and the first virtual line, and the first virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the first telescopic shaft; k 2 is the distance between the axis of the second probe and the first virtual line; k 3 is the distance between the axis of the first probe and the second virtual line, and the second virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the second telescopic shaft; k 4is the distance between the axis of the second measuring rod and the second virtual line; R is the diameter of the circumscribed circle of the equilateral triangle where the axes of the first telescopic shaft, the axis of the second telescopic shaft, and the center of the fixed support point are located.

[0020] Preferably, in the method for adjusting the surface state of the wafer stage, the k 3 is determined according to the following formula:

[0021]

[0022] wherein, R 01 is the diameter of the locus circle traced by the axis of the first measuring rod of the first height measuring component on the wafer stage.

[0023] Preferably, in the method for adjusting the surface state of the wafer stage, the k 4 is determined according to the following formula:

[0024]

[0025] wherein, R 02 is the diameter of the locus circle traced by the axis of the second measuring rod of the second height measuring component on the wafer stage.

[0026] The thinning method includes the method for adjusting the surface state of the wafer stage as described in any one of the above.

[0027] Preferably, in the thinning method, if it is determined that the surface state of the wafer stage is abnormal when the wafer stage is at the first position, after the workpiece at this position is processed, then rotate the wafer stage to the second position; after the wafer stage rotates to the second position, when controlling the wafer stage to rotate self and detecting through the second height measuring component, control the thinning mechanism not to process the workpiece, and when it is determined that the first adjustment device and the second adjustment device are adjusted in place, then control the thinning mechanism to process the workpiece.

[0028] A system for adjusting the surface state of a wafer stage, comprising:

[0029] A judgment unit for determining whether the surface state of the wafer stage in the first position and rotating self meets the requirements according to the data measured by the first height measuring component, and the first measuring rod of the first height measuring component is carried at the first detection point on the wafer stage in the first position;

[0030] A first change value acquisition unit for acquiring the first change value of the data measured by the first height measuring component when it is determined that the surface state of the wafer stage does not meet the requirements;

[0031] A rotation unit for rotating the wafer stage to the second position;

[0032] The second change value acquisition unit is configured to rotate the susceptor at the second position and acquire the second change value of the data measured by the second height measurement component, and the second measuring rod of the second height measurement component is carried at the second detection point on the susceptor at the second position;

[0033] The adjustment amount calculation unit is configured to calculate a first adjustment amount that needs to be adjusted by the first adjustment device connected to the susceptor and calculate a second adjustment amount that needs to be adjusted by the second adjustment device connected to the susceptor according to the first change value and the second change value;

[0034] The adjustment unit is configured to control the first adjustment device to make an adjustment according to the first adjustment amount and control the second adjustment device to make an adjustment according to the second adjustment amount

[0035] The thinning device includes a processor and a memory, and the memory stores a program executable by the processor. When the program is executed, it implements the susceptor surface state adjustment method described in any one of the above or the thinning method described in any one of the above.

[0036] The advantages of the technical solution of the present invention are mainly reflected in:

[0037] The present invention realizes the recognition of the surface state of the susceptor based on the original thickness measurement structure of the thinning device, can realize the detection of the surface state without adding an additional electronic level, and when an abnormality is recognized, the adjustment amounts of the first and second adjustment devices are calculated according to the data measured at two different positions of the susceptor, which is beneficial to improving the calculation accuracy of the adjustment amount.

[0038] The calculation method of the adjustment amount of the present invention is simple, only a small amount of real-time data needs to be acquired for calculation, and it is easy to implement.

[0039] The present invention can perform comparison and verification of the susceptor surface state recognition through the detection data at two positions of the susceptor, can reduce unnecessary misjudgment, and is beneficial to reducing the efficiency loss caused by adjustment. Description of the Drawings

[0040] Figure 1 is a perspective view of the susceptor of the present invention connected to the first adjustment device, the second adjustment device and the support device;

[0041] Figure 2 is a schematic diagram of the positional relationship of the first telescopic shaft, the second telescopic shaft, the fixed support point, the first detection point, and the second detection point in the present invention;

[0042] Figure 3 is a schematic diagram of the process of the susceptor surface state adjustment method of the present invention. Detailed Embodiments

[0043] The objectives, advantages and features of the present invention will be illustrated and explained through the non-limiting description of the following preferred embodiments. These embodiments are only typical examples of applying the technical solution of the present invention, and any technical solutions formed by equivalent replacement or equivalent transformation fall within the scope of protection required by the present invention.

[0044] In the description of the solution, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of description and simplification, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, so it cannot be understood as a limitation to the present invention. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0045] Embodiment 1

[0046] The following describes the method for adjusting the surface state of the wafer stage of the present invention in conjunction with the drawings. The method for the surface state of the wafer stage is based on a multi-wafer stage 100 double-station processing device, and its specific structure can be the structure disclosed in the invention patent application with the application publication number CN115338717A. Of course, the multi-wafer stage 100 double-station processing device is not limited to the structure of the above patent application. For example, the number of wafer stages 100 can be more or less, and it is specifically designed according to needs and is not limited here.

[0047] For the convenience of description, the following uses the structure of the above-mentioned patent application as an example for illustration. That is, three wafer stages are evenly distributed on a dividing table, and the dividing table rotates 120° each time, so that each wafer stage 100 on it moves successively between the first position, the second position and the third position. When in the first position, the wafer stage 100 is at the rough grinding position; when in the second position, the wafer stage 100 is at the fine grinding position; when in the third position, the wafer stage 100 is at the loading and unloading position. Of course, in other embodiments, it can also be that when in the first position, the wafer stage 100 is at the fine grinding position, and when in the second position, the wafer stage 100 is at the rough grinding position.

[0048] When one of the wafer stages 100 is in the first position, the thickness of the workpiece on it is measured by a first height measuring component and a third height measuring component. Specifically, during detection, the first measuring rod of the first height measuring component is placed on the first detection point on the surface (table surface) of the wafer stage 100, the third measuring rod of the third height measuring component is placed on the wafer, and then the thickness of the workpiece is obtained according to the data difference measured by the two.

[0049] Similarly, when a wafer stage 100 is in the second position, the thickness of the workpiece thereon is measured by a second height measuring component and a fourth height measuring component. The specific thickness measuring principle is the same as that when the wafer stage 100 is in the first position, and will not be elaborated here.

[0050] When the surface state of the wafer stage 100 is normal, the data measured by the first height measuring component and the second height measuring component changes very little, and the change does not exceed the threshold; conversely, if the surface state of the wafer stage 100 is abnormal, that is, the surface of the wafer stage 100 is skewed. At this time, the height difference between the lowest point and the highest point of the surface of the wafer stage 100 increases. Then, during the rotation of the wafer stage 100, the change amount of the data measured by the first height measuring component and the second height measuring component will exceed the threshold. Therefore, according to the data measured by the first height measuring component and the second height measuring component, it is determined whether the surface state of the wafer stage 100 meets the requirements when it is in the first position and the second position.

[0051] When it is determined that the surface state of the wafer stage 100 does not meet the requirements, the surface state of the wafer stage 100 is adjusted.

[0052] As shown in the Figure 1 appendix Figure 2 As shown, the wafer stage 100 includes a chuck assembly 110 and a rotation driving assembly 120 for driving the chuck assembly 110 to rotate. The specific structures of the chuck assembly and the rotation driving assembly are known technologies and will not be elaborated here. The rotation driving assembly 120 is connected with a first adjustment device 401, a second adjustment device 501 and a support device 601 fixed on the indexing table. The first adjustment device 401 and the second adjustment device 501 can be known servo hydraulic cylinders, electric push rods and other devices, and the support device 601 can be a support column. Of course, it can also be other feasible structures, which are not limited here. The first telescopic shaft 400 of the first adjustment device 401 and the second telescopic shaft 500 of the second adjustment device 501 extend in the vertical direction, and the first telescopic shaft 400, the second telescopic shaft 500 and the fixed support point 600 of the support device 601 are distributed in an equilateral triangle, and the equilateral triangle is concentric with the wafer stage 100. Moreover, the tops of the first support shaft and the second support shaft and the fixed support point 600 can adopt ball heads, and grooves matching the ball heads are arranged on the rotation driving assembly, so as to facilitate adjustment.

[0053] Specifically, as shown in the Figure 3 appendix, the method for adjusting the surface state of the wafer stage includes the following steps:

[0054] S1. Determine whether the surface state of the wafer stage 100 in the first position and rotating meets the requirements according to the data measured by the first height measurement component. The first measuring rod of the first height measurement component is mounted at the first detection point 200 on the wafer stage 100 in the first position;

[0055] S2. When it is determined that the surface state of the wafer stage 100 does not meet the requirements, obtain the first change value of the data measured by the first height measurement component;

[0056] S3. Rotate the wafer stage 100 to the second position, that is, the wafer stage 100 rotates 120°;

[0057] S4. Rotate the wafer stage 100 in the second position and obtain the second change value of the data measured by the second height measurement component. The second measuring rod of the second height measurement component is mounted at the second detection point 300 on the wafer stage 100 in the second position;

[0058] S5. Calculate the first adjustment amount that the first adjustment device 401 connected to the wafer stage 100 needs to adjust and calculate the second adjustment amount that the second adjustment device 501 connected to the wafer stage 100 needs to adjust according to the first change value and the second change value;

[0059] S6. Control the first adjustment device 401 to adjust according to the first adjustment amount and control the second adjustment device 501 to adjust according to the second adjustment amount.

[0060] In step S4, at the second position, if it is determined that the surface state of the wafer stage 100 does not meet the requirements according to the data measured by the second height measurement component, the wafer stage 100 is adjusted. If it is determined that the surface state of the wafer stage 100 meets the requirements according to the data measured by the second height measurement component, the wafer stage 100 may not be adjusted and the thinning continues. If the wafer stage 100 is rotated to the first position again for processing and it is determined that the surface state of the wafer stage 100 still does not meet the requirements according to the data measured by the first height measurement component, when the wafer stage 100 is rotated to the second position, it is no longer determined whether the surface state of the wafer stage 100 meets the requirements according to the data measured by the second height measurement component, but the wafer stage 100 is directly adjusted according to the data measured by the second height measurement component. Or when it is determined that the surface state of the wafer stage is normal according to the data measured by the second height measurement component, the wafer stage 100 can be rotated back to the first position again, and the surface state is detected by the first height measurement component. If the surface state is abnormal, an alarm is issued to remind manual inspection. If the surface state is normal, no adjustment is made and the thinning continues.

[0061] As attached Figure 2 As shown, in step S5, the first adjustment amount is determined according to the following formula:

[0062]

[0063] The second adjustment amount is determined according to the following formula:

[0064]

[0065] where a is the first adjustment amount, b is the second adjustment amount; P 1 is the first change value; P 2 is the second change value. The first change value and the second change value are the maximum change amounts of the data measured by the first height measuring component and the second height measuring component relative to the ideal value. That is, when the surface state of the susceptor 100 is normal, the ideal value at the first detection point is subtracted from each data measured in real time at the first detection point when the surface state of the susceptor 100 is abnormal, and the absolute value is taken. Then, the maximum value is taken from the obtained set of absolute values as the first change value. Similarly, when the surface state of the susceptor 100 is normal, the ideal value at the second detection point is subtracted from each data measured in real time at the second detection point when the surface state of the susceptor 100 is abnormal, and the absolute value is taken. Then, the maximum value is taken from the obtained set of absolute values as the second change value; P 1 is the first change value, P 2 is the second change value, k 1 is the distance between the axis of the first probe and the first virtual line. The first virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the first telescopic shaft; k 2 is the distance between the axis of the second probe and the first virtual line; k 3 is the distance between the axis of the first probe and the second virtual line. The second virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the second telescopic shaft; k 4 is the distance between the axis of the second probe and the second virtual line; R is the diameter of the circumscribed circle of the equilateral triangle formed by the axis of the first telescopic shaft, the axis of the second telescopic shaft, and the center of the fixed support point.

[0066] And the k 3 is determined according to the following formula:

[0067]

[0068] where R 01 is the diameter of the trajectory circle traced by the probe of the first height measuring component on the susceptor 100.

[0069] The k 4 is determined according to the following formula:

[0070]

[0071] wherein, R 02 is the diameter of the circular trajectory traced by the probe of the second height measuring component on the susceptor 100.

[0072] During calculation, the above-mentioned R, k 1 , k 2 , R 01 , R 02 are all known parameters and stored in the memory. During calculation, only the above data needs to be read and the first change value and the second change value are obtained, and then the first adjustment amount and the second adjustment amount can be calculated.

[0073] Embodiment 2

[0074] This embodiment discloses a susceptor surface state adjustment system, including:

[0075] A judgment unit, configured to determine whether the surface state of the susceptor 100 at the first position and rotating is qualified according to the data measured by the first height measuring component;

[0076] A first change value acquisition unit, configured to acquire a first change value of the data measured by the first height measuring component when it is determined that the surface state of the susceptor 100 is unqualified. The first measuring rod of the first height measuring component is mounted at a first detection point 200 on the susceptor 100 at the first position;

[0077] A rotation unit, configured to rotate the susceptor 100 to the second position;

[0078] A second change value acquisition unit, configured to rotate the susceptor 100 at the second position and acquire a second change value of the data measured by the second height measuring component. The second measuring rod of the second height measuring component is mounted at a second detection point 300 on the susceptor 100 at the second position;

[0079] An adjustment amount calculation unit, configured to calculate a first adjustment amount that needs to be adjusted by the first adjustment device 401 connected to the susceptor 100 and calculate a second adjustment amount that needs to be adjusted by the second adjustment device 501 connected to the susceptor 100 according to the first change value and the second change value;

[0080] An adjustment unit, configured to control the first adjustment device 401 to make an adjustment according to the first adjustment amount and control the second adjustment device 501 to make an adjustment according to the second adjustment amount.

[0081] Embodiment 3

[0082] This embodiment discloses a thinning method, including the susceptor surface state adjustment method as described above.

[0083] If the surface state of the wafer stage 100 is determined to be abnormal when it is in the first position, after the workpiece at this position is processed, then rotate the wafer stage 100 to the second position; after the wafer stage 100 rotates to the second position, during the process of controlling the wafer stage 100 to rotate itself for surface state detection, control the thinning mechanism not to process the workpiece. When it is determined that the first adjustment device 401 and the second adjustment device 501 are adjusted in place, then control the thinning mechanism to process the workpiece.

[0084] Embodiment 4

[0085] This embodiment discloses a thinning device, including a processor and a memory. The memory stores a program executable by the processor. When the program is executed, it implements the method for adjusting the surface state of the wafer stage as described above or the thinning method as described above.

[0086] There are still various implementation manners of the present invention. All technical solutions formed by equivalent transformation or equivalent substitution fall within the protection scope of the present invention.

Claims

1. Method for adjusting the surface state of the wafer stage, Characterized in that, It includes the following steps: S1. Determine whether the surface state of the wafer stage in the first position and rotating is compliant according to the data measured by the first height measurement component, and the first measuring rod of the first height measurement component is mounted at the first detection point on the wafer stage in the first position; S2. When it is determined that the surface state of the wafer stage does not meet the requirements, obtain the first change value of the data measured by the first height measurement component; S3. Rotate the wafer stage to the second position; S4. Rotate the wafer stage at the second position and obtain the second change value of the data measured by the second height measurement component, and the second measuring rod of the second height measurement component is mounted at the second detection point on the wafer stage in the second position; S5. Calculate the first adjustment amount that the first adjustment device connected to the wafer stage needs to be adjusted and calculate the second adjustment amount that the second adjustment device connected to the wafer stage needs to be adjusted according to the first change value and the second change value; S6. Control the first adjustment device to make an adjustment according to the first adjustment amount and control the second adjustment device to make an adjustment according to the second adjustment amount.

2. The method for adjusting the surface state of the wafer stage according to claim 1, Characterized in that: The first telescopic shaft of the first adjustment device, the second telescopic shaft of the second adjustment device and the fixed support points for supporting the wafer stage are distributed in an equilateral triangle, and the equilateral triangle is concentric with the wafer stage.

3. The method for adjusting the surface state of the wafer stage according to claim 2, Characterized in that: The first adjustment amount is determined according to the following formula: where a is the first adjustment amount, P 1 is the first change value, P 2 is the second change value, k 1 is the distance between the axis of the first measuring rod and the first virtual line, and the first virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the first telescopic shaft; k 2 is the distance between the axis of the second measuring rod and the first virtual line; k 3 is the distance between the axis of the first measuring rod and the second virtual line, and the second virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the second telescopic shaft; k 4 is the distance between the axis of the second measuring rod and the second virtual line; R is the diameter of the circumscribed circle of the equilateral triangle where the axes of the first telescopic shaft, the second telescopic shaft and the center of the fixed support point are located.

4. The method for adjusting the surface state of the wafer stage according to claim 2, Characterized in that: The second adjustment amount is determined according to the following formula: where b is the second adjustment amount, P 1 is the first change value, P 2 is the second change value, k 1 is the distance between the axis of the first measuring rod and the first virtual line, and the first virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the first telescopic shaft; k 2 is the distance between the axis of the second measuring rod and the first virtual line; k 3 is the distance between the axis of the first measuring rod and the second virtual line, and the second virtual line is a straight line passing through the center of the fixed support point and perpendicular to the axis of the second telescopic shaft; k 4 is the distance between the axis of the second measuring rod and the second virtual line; R is the diameter of the circumscribed circle of the equilateral triangle where the axes of the first telescopic shaft, the second telescopic shaft, and the center of the fixed support point are located.

5. The method for adjusting the surface state of the wafer stage according to claim 3 or 4, Characterized in that: The said k 3 is determined according to the following formula: wherein, R 01 is the diameter of the circular trajectory traced by the axis of the first height measuring rod of the first height measuring assembly on the wafer stage.

6. The method for adjusting the surface state of the wafer stage according to claim 3 or 4, Characterized in that: The said k 4 is determined according to the following formula: wherein, R 02 is the diameter of the trace circle formed by the axis of the second measuring rod of the second height measuring component on the wafer stage.

7. Thinning method, Characterized in that: It includes the method for adjusting the surface state of the wafer stage according to any one of claims 1-6.

8. The thinning method according to claim 7, Characterized in that: If it is determined that the surface state is abnormal when the wafer stage is in the first position, after the workpiece at this position is processed, then rotate the wafer stage to the second position; after the wafer stage rotates to the second position, when controlling the wafer stage to rotate and detecting through the second height measurement component, control the thinning mechanism not to process the workpiece, and when it is determined that the first adjustment device and the second adjustment device are adjusted in place, control the thinning mechanism to process the workpiece.

9. Wafer stage surface state adjustment system, Characterized in that, It includes: A judgment unit for determining whether the surface state of the wafer stage in the first position and rotating is compliant according to the data measured by the first height measurement component, and the first measuring rod of the first height measurement component is mounted at the first detection point on the wafer stage in the first position; A first change value acquisition unit for obtaining the first change value of the data measured by the first height measurement component when it is determined that the surface state of the wafer stage does not meet the requirements; A rotation unit for rotating the wafer stage to a second position; A second change value acquisition unit for causing the wafer stage at the second position to rotate on its own axis and acquiring a second change value of data measured by a second height measuring component, wherein a second measuring rod of the second height measuring component is mounted at a second detection point on the wafer stage at the second position; An adjustment amount calculation unit for calculating a first adjustment amount that needs to be adjusted for a first adjustment device connected to the wafer stage and calculating a second adjustment amount that needs to be adjusted for a second adjustment device connected to the wafer stage according to the first change value and the second change value; An adjustment unit for controlling the first adjustment device to make an adjustment according to the first adjustment amount and controlling the second adjustment device to make an adjustment according to the second adjustment amount.

10. A thinning device, comprising a processor and a memory, wherein the memory stores a program executable by the processor, characterized in that: When the program is executed, it implements the wafer stage surface state adjustment method according to any one of claims 1-6 or the thinning method according to any one of claims 7-8.

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