GaN power device driving control method and system

Abstract

The invention provides a GaN power device driving control method and system, and the method comprises the steps: detecting the change of drain-source voltage in real time through a voltage detection circuit which is connected in parallel with the drain end and the source end of a switching tube, and obtaining the detection information of the drain-source voltage; according to the drain-source voltage detection information, judging whether the drain-source voltage detection information meets a complete soft start condition or not, and obtaining a drain-source voltage complete start judgment result; according to a judgment result that drain-source voltage is completely started, a driver is controlled by an isolation controller to drive a switch tube to start and stop, and dead zone time is dynamically, adaptively and precisely controlled; and according to dynamic adaptive high-precision control dead time, the switching frequency of the ACF switching power supply is improved, and the power density of the power supply system is increased.

Description

Technical Field

[0001] The present invention relates to the technical field of high-precision control of signal detection and intelligent information energy utilization of semiconductor devices. More specifically, the present invention relates to a GaN power device drive control system and method. Background Art

[0002] The soft-switching topology structure is a low-loss power supply framework structure widely used in the industrial community today. The traditional soft-switching control strategy is to draw away the charge stored on the drain-source capacitance of the power switch transistor through the resonance of the loop inductance and capacitance before turning on, so as to achieve the turn-on of the switching device under zero voltage. During the process of drawing away the charge, the upper and lower switching devices on the half-bridge arm must be turned off simultaneously. This period of time is called the dead time. Therefore, the control of the dead time is a key link in the soft-switching control strategy. If the dead time is too short, the charge on the drain-source capacitance of the device is not completely drawn away, and there is still a certain drain voltage when the device is turned on, which cannot meet the zero-voltage turn-on condition of the soft-switching topology and increases the turn-on transient loss. If the dead time is too long, the power switch transistor will conduct reversely under the action of resonance, increasing the reverse conduction loss. Therefore, in order to optimize the power efficiency of the power supply, it is necessary to find the optimal dead time for control. In the control circuit of traditional Si power devices, a fixed dead time control strategy is usually adopted according to the GaN power device and circuit structure parameters;

[0003] The high-frequency switching ability is a key factor for GaN power devices to improve the power density of the power supply system. However, as the frequency increases, the trapping effect of carriers by traps caused by material defects in GaN devices is enhanced, resulting in the drift of the basic parameters of the device. Among them, the change of the inter-electrode capacitance (especially the output capacitance) will cause the change of the amount of charge that needs to be drawn away for the device to achieve soft switching, that is, the dead time window drifts. Therefore, if the traditional soft-switching fixed dead time control strategy is adopted, it means that additional reverse conduction losses or non-zero voltage turn-on switching losses and other problems need to be solved. Therefore, it is necessary to propose a GaN power device drive control system and method to at least partially solve the problems existing in the prior art. Summary of the Invention

[0004] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further described in detail in the Detailed Description section. The Summary of the Invention section of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the protection scope of the claimed technical solution.

[0005] To at least partially solve the above problems, the present invention provides a GaN power device drive control method, including:

[0006] S10. Detect the change in the drain-source voltage in real time through a voltage detection circuit connected in parallel across the drain and source of the switching transistor, and obtain the drain-source voltage detection information.

[0007] S20. Based on the drain-source voltage detection information, determine whether the drain-source voltage detection information meets the condition for achieving full soft start, and obtain the full soft start determination result of the drain-source voltage.

[0008] S30. Based on the full soft start determination result of the drain-source voltage, control the driver to drive the switching transistor to start and stop through an isolation controller, and dynamically and adaptively control the dead time with high precision.

[0009] S40. Based on the dynamically and adaptively controlled dead time with high precision, increase the switching frequency of the ACF switching power supply and increase the power density of the power supply system.

[0010] Preferably, S10 includes:

[0011] S101. Construct an ACF buck topology power supply architecture, and obtain the GaN power device and circuit structure parameters in the GaN power device control circuit.

[0012] S102. Based on the GaN power device and circuit structure parameters, set a voltage detection circuit across the drain and source of the switching transistor, detect the change in the drain-source voltage in real time, and obtain the drain-source voltage detection information.

[0013] Preferably, S20 includes:

[0014] S201. Receive the drain-source voltage detection information from the voltage detection circuit; set the full soft start condition; the full soft start condition includes the condition that the drain-source voltage is zero.

[0015] S202. Based on the drain-source voltage detection information, compare whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator, and obtain the full soft start determination result of the drain-source voltage.

[0016] Preferably, S30 includes:

[0017] S301. Based on the full soft start determination result of the drain-source voltage, when the drain-source voltage detection information meets the condition that the drain-source voltage is zero, the switching transistor reaches the condition for achieving full soft start.

[0018] S302. Based on the switching transistor reaching the condition for achieving full soft start, trigger the switching transistor turn-on signal through the isolation controller; turn on the switching transistor through the switching transistor turn-on signal to avoid additional loss increase.

[0019] S303. When the drain-source voltage detection information does not meet the condition that the drain-source voltage is zero and the circuit is in a non-operating interval, control to turn off the switching transistor and dynamically and adaptively control the dead time with high precision.

[0020] Preferably, S40 includes:

[0021] S401, according to the dynamic adaptive high-precision control of the dead time, improve the switching frequency of the ACF switching power supply;

[0022] S402, combining the dynamic adaptive high-precision control of the dead time and the switching frequency of the ACF switching power supply, significantly improve the efficiency of the ACF switching power supply and the power density of the power system.

[0023] The present invention provides a GaN power device drive control system, including:

[0024] A drain-source voltage detection module, through a voltage detection circuit connected in parallel across the drain and source of the switching transistor, continuously detects the change in the drain-source voltage and obtains the drain-source voltage detection information;

[0025] A full-on information determination module, according to the drain-source voltage detection information, determines whether the drain-source voltage detection information meets the conditions for achieving full soft start, and obtains the full-on determination result of the drain-source voltage;

[0026] An isolated control dynamic start-stop module, according to the full-on determination result of the drain-source voltage, controls the start and stop of the drive of the switching transistor through an isolation controller, and dynamically adapts to high-precision control of the dead time;

[0027] A switching frequency power density adjustment module, according to the dynamic adaptive high-precision control of the dead time, increases the switching frequency of the ACF switching power supply and increases the power density of the power system.

[0028] Preferably, the drain-source voltage detection module includes:

[0029] A topology structure information unit, constructs an ACF topology power supply architecture, and obtains the GaN power device and circuit structure parameters in the GaN power device control circuit;

[0030] A drain-source voltage detection unit, according to the GaN power device and circuit structure parameters, sets a voltage detection circuit across the drain and source of the switching transistor, continuously detects the change in the drain-source voltage, and obtains the drain-source voltage detection information.

[0031] Preferably, the full-on information determination module includes:

[0032] A detection docking setting condition unit, receives the drain-source voltage detection information of the voltage detection circuit; sets the full soft start condition; the full soft start condition includes the condition that the drain-source voltage is zero;

[0033] A switch-on determination unit, according to the drain-source voltage detection information, compares whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator, and obtains the full-on determination result of the drain-source voltage.

[0034] Preferably, the isolation control dynamic start-stop module includes:

[0035] The zero-voltage soft start condition unit, according to the fully open determination result of the drain-source voltage, when the drain-source voltage detection information meets the condition that the drain-source voltage is zero, the switching transistor reaches the condition for realizing full soft start;

[0036] The isolation controller trigger unit, according to the switching transistor reaching the condition for realizing full soft start, triggers the switching transistor turn-on signal through the isolation controller; turns on the switching transistor through the switching transistor turn-on signal to avoid additional loss increase;

[0037] The dynamic high-precision control unit, when the drain-source voltage detection information does not meet the condition that the drain-source voltage is zero and the circuit is in the non-operating interval, controls to turn off the switching transistor and dynamically adaptively and highly precisely controls the dead time.

[0038] Preferably, the switching frequency power density adjustment module includes:

[0039] The power supply switching frequency adjustment unit, according to the dynamically adaptive high-precision controlled dead time, increases the switching frequency of the ACF switching power supply;

[0040] The power density enhancement unit of the power supply, combined with the dynamically adaptive high-precision controlled dead time and the switching frequency of the ACF switching power supply, significantly improves the efficiency of the ACF switching power supply and the power density of the power supply system.

[0041] Compared with the prior art, the present invention has at least the following beneficial effects:

[0042] The present invention provides a driving control method and system for GaN power devices. Through a voltage detection circuit connected in parallel across the drain-source terminals of a switching transistor, the change in the drain-source voltage is detected in real time to obtain drain-source voltage detection information. According to the drain-source voltage detection information, it is determined whether the drain-source voltage detection information meets the condition for achieving full soft turn-on, and a drain-source voltage full turn-on determination result is obtained. According to the drain-source voltage full turn-on determination result, an isolation controller is used to control the driver to drive the switching transistor to start and stop, and the dead time is dynamically and adaptively controlled with high precision. According to the dynamically and adaptively controlled dead time with high precision, the switching frequency of the ACF switching power supply is increased, and the power density of the power supply system is increased. It can adaptively control the dead time with high precision. Through the voltage detection circuit connected in parallel across the drain-source terminals of the switching transistor, the change in the drain-source voltage is detected in real time. When the drain-source voltage is zero, it indicates that the switching transistor has reached the condition for achieving full soft turn-on. At this time, the switching transistor is turned on through the isolation controller, which can effectively avoid additional power loss. Based on the ACF topology power supply architecture, through an optimized scheme of dynamically and adaptively adjusting the dead time, the switching frequency of the ACF switching power supply is increased, and at the same time, the efficiency of the ACF switching power supply and the power density of the power supply system are significantly improved. Aiming at the problem that the drift of the dead time window caused by the change of the inter-electrode capacitance, especially the output capacitance, during the high-frequency switching process of GaN devices increases the power consumption of the soft-switching circuit, an adaptive dead time adjustment control method is proposed to improve the reliability and accuracy of the high-frequency driving control of GaN power devices. Furthermore, while the system power density is increased under high-frequency switching conditions, the power efficiency is significantly improved; it has important technical significance and remarkable effects.

[0043] A driving control method and system for GaN power devices according to the present invention. Other advantages, objectives, and features of the present invention will be partially reflected by the following description and partially understood by those skilled in the art through the research and practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention. In the drawings:

[0045] Figure 1 FIG. is an embodiment diagram of an ACF power supply topology applying the adaptive dead time control technology for a driving control method and system for GaN power devices according to the present invention.

[0046] Figure 2 FIG. is an example diagram of key waveforms during the ACF operation of a driving control method and system for GaN power devices according to the present invention.

[0047] Figure 3An embodiment diagram of a GaN power device drive control system according to the present invention; an equivalent circuit during soft turn-on in a half-bridge with an ACF topology structure, where the arrow indicates the current direction, and M1 is equivalent to the output capacitance, and the stored charge is extracted by the resonant current.

[0048] Figure 4 An embodiment diagram of the circuit structure of a GaN power device drive control system according to the present invention. Detailed implementation manners

[0049] The following further elaborates on the present invention in detail in conjunction with the accompanying drawings and embodiments, so that those skilled in the art can implement it with reference to the description; as shown in the figure, the present invention provides a GaN power device drive control method, including:

[0050] S10, through a voltage detection circuit connected in parallel across the drain-source terminals of the switching transistor, continuously detect the change in the drain-source voltage and obtain the drain-source voltage detection information;

[0051] S20, based on the drain-source voltage detection information, determine whether the drain-source voltage detection information meets the condition for achieving complete soft turn-on, and obtain the determination result of complete turn-on of the drain-source voltage;

[0052] S30, according to the determination result of complete turn-on of the drain-source voltage, control the start and stop of the switching transistor by the isolator controller to drive the driver, and dynamically and adaptively control the dead time with high precision;

[0053] S40, based on the dynamically and adaptively controlled dead time with high precision, increase the switching frequency of the ACF switching power supply and increase the power density of the power supply system.

[0054] The principle and effects of the above technical solution are as follows: The present invention provides a driving control method for a GaN power device, including: detecting the change of the drain-source voltage in real time through a voltage detection circuit connected in parallel across the drain and source of the switching transistor, and obtaining the drain-source voltage detection information; determining whether the drain-source voltage detection information meets the condition for achieving full soft turn-on according to the drain-source voltage detection information, and obtaining the determination result of full turn-on of the drain-source voltage; controlling the start and stop of the switching transistor by the driver through the isolation controller according to the determination result of full turn-on of the drain-source voltage, and dynamically and adaptively controlling the dead time with high precision; increasing the switching frequency of the ACF switching power supply and the power density of the power supply system according to the dynamically and adaptively controlled dead time with high precision; being able to adaptively control the dead time with high precision, detecting the change of the drain-source voltage in real time through a voltage detection circuit connected in parallel across the drain and source of the switching transistor. When the drain-source voltage is zero, it indicates that the switching transistor has reached the condition for achieving full soft turn-on. At this time, the switching transistor is turned on through the isolation controller, which can effectively avoid the increase of additional losses; based on the ACF buck topology power supply architecture, through the optimization scheme of dynamically and adaptively adjusting the dead time, the switching frequency of the ACF switching power supply is increased, and at the same time, the efficiency of the ACF switching power supply and the power density of the power supply system are significantly improved. Aiming at the problem of increased power consumption of the soft-switching circuit caused by the drift of the dead-time window due to the change of the inter-electrode capacitance, especially the output capacitance, during the high-frequency switching process of the GaN device, an adaptive dead-time adjustment control method is proposed to improve the reliability and accuracy of the high-frequency driving control of the GaN power device, and then while improving the system power density under high-frequency switching conditions, the power efficiency is significantly improved; it has important technical significance and remarkable effects; stabilizing the output voltage through negative feedback; stabilizing the output voltage through negative feedback includes: if the output voltage Vo increases, the control chip U4 detects this voltage signal through R26, R28, R30, C45, C46 and the connecting components, and obtains the detected voltage; the control chip U4 compares this detected voltage with its internal reference voltage to generate an error signal, adjusts the current of the light-emitting diode of the optocoupler element U5A, adjusts the current of the receiving triode of U5A, adjusts the output control signals PWMH and PWML of the isolation drive control chip U3, adjusts the output signals HO and LO of the driver chip U1, adjusts the switching time of the GaN power devices Q2 and Q3, and after passing through the transformer T1A, feeds back to the output circuit to reduce and adjust the output voltage Vo, so that the output voltage Vo tends to be stable.

[0055] In one embodiment, S10 includes:

[0056] S101, constructing an ACF buck topology power supply architecture, and obtaining the GaN power device and circuit structure parameters in the GaN power device control circuit;

[0057] S102, setting a voltage detection circuit across the drain and source of the switching transistor according to the GaN power device and circuit structure parameters, detecting the change of the drain-source voltage in real time, and obtaining the drain-source voltage detection information.

[0058] The principle and effect of the above technical solution are as follows: Construct an ACF topological power supply architecture. In the control circuit of the GaN power device, obtain the GaN power device and circuit structure parameters. According to the GaN power device and circuit structure parameters, set a voltage detection circuit at both ends of the drain-source of the switch tube to detect the change of the drain-source voltage in real time and obtain the drain-source voltage detection information. Through the voltage detection circuit connected in parallel at both ends of the drain-source of the switch tube, the change of the drain-source voltage is detected in real time, which can significantly improve the detection accuracy of the GaN power device and the circuit structure. The voltage detection circuit further includes: a resistance-capacitance intelligent matching unit, a detection information processing unit, and a tracking verification unit. The resistance-capacitance intelligent matching unit precisely fine-tunes the charge storage surface of the capacitor bank connected to the circuit according to the resistance-capacitance value relationship between the resistor bank and the capacitor bank of the voltage detection circuit, so that the capacitor bank intelligently balances the matching relationship between the resistor bank and the capacitor bank according to the subtle change of the temperature of the resistor bank. The detection information processing unit performs fluctuation steady-state processing on the detection information of the resistance-capacitance intelligent matching unit to obtain the fluctuation steady-state detection information. The tracking verification unit verifies the fluctuation steady-state detection information according to the temperature-resistance statistical relationship, greatly reducing the influence of temperature change on the detection accuracy error during the detection process and significantly improving the voltage detection accuracy.

[0059] In one embodiment, S20 includes:

[0060] S201, receive the drain-source voltage detection information of the voltage detection circuit; set the full soft start condition; the full soft start condition includes the condition that the drain-source voltage is zero;

[0061] S202, according to the drain-source voltage detection information, compare whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator to obtain the full-on determination result of the drain-source voltage.

[0062] The principle and effect of the above technical solution are as follows: Receive the drain-source voltage detection information of the voltage detection circuit; set the full soft start condition; the full soft start condition includes the condition that the drain-source voltage is zero; according to the drain-source voltage detection information, compare whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator to obtain the full-on determination result of the drain-source voltage. When the drain-source voltage is zero, it indicates that the switch tube has reached the condition for achieving full soft start, and the condition determination is more accurate, and the probability of misjudgment is significantly reduced.

[0063] In one embodiment, S30 includes:

[0064] S301, according to the full-on determination result of the drain-source voltage, when the drain-source voltage detection information meets the condition that the drain-source voltage is zero, the switch tube reaches the condition for achieving full soft start;

[0065] S302. According to the condition that the switching transistor reaches the full soft - turn - on condition, trigger the switching - transistor turn - on signal through the isolation controller; turn on the switching transistor through the switching - transistor turn - on signal to avoid the increase of additional losses.

[0066] S303. When the drain - source voltage detection information does not meet the condition that the drain - source voltage is zero and the circuit is in the non - working interval, control to turn off the switching transistor and dynamically adaptively and accurately control the dead - time.

[0067] The principle and effect of the above - mentioned technical solution are as follows: According to the full - turn - on determination result of the drain - source voltage, when the drain - source voltage detection information meets the condition that the drain - source voltage is zero, the switching transistor reaches the full soft - turn - on condition; according to the condition that the switching transistor reaches the full soft - turn - on condition, trigger the switching - transistor turn - on signal through the isolation controller; turn on the switching transistor through the switching - transistor turn - on signal to avoid the increase of additional losses; when the drain - source voltage detection information does not meet the condition that the drain - source voltage is zero and the circuit is in the non - working interval, control to turn off the switching transistor and dynamically adaptively and accurately control the dead - time; turning on the switching transistor through the isolation controller can effectively avoid the increase of additional losses.

[0068] In one embodiment, S40 includes:

[0069] S401. According to the dynamically adaptive and accurate control of the dead - time, increase the switching frequency of the ACF switching power supply.

[0070] S402. Combine the dynamically adaptive and accurate control of the dead - time and the switching frequency of the ACF switching power supply to significantly improve the efficiency of the ACF switching power supply and the power density of the power supply system.

[0071] The principle and effect of the above - mentioned technical solution are as follows: According to the dynamically adaptive and accurate control of the dead - time, increase the switching frequency of the ACF switching power supply; increasing the switching frequency of the ACF switching power supply includes: increasing the switching frequency of the ACF switching power supply by combining the dynamically adaptive and accurate control of the dead - time and the switching frequency of the ACF switching power supply to significantly improve the efficiency of the ACF switching power supply and the power density of the power supply system; an adaptive dead - time adjustment control method is proposed to improve the reliability and accuracy of the high - frequency drive control of GaN power devices, and then while improving the power density of the system under high - frequency switching conditions, the power efficiency is significantly improved.

[0072] The present invention provides a GaN power - device drive control system, including:

[0073] A drain - source dual - end voltage detection module, through a voltage detection circuit connected in parallel across the drain and source of the switching transistor, detects the change of the drain - source voltage in real time and obtains the drain - source voltage detection information.

[0074] Fully enable the information determination module. According to the drain-source voltage detection information, determine whether the drain-source voltage detection information meets the conditions for realizing full soft start, and obtain the full soft start determination result of the drain-source voltage;

[0075] Isolate the control dynamic start-stop module. According to the full soft start determination result of the drain-source voltage, control the start and stop of the switch tube driven by the driver through the isolation controller, and dynamically and adaptively control the dead time with high precision;

[0076] The switching frequency power density adjustment module improves the switching frequency of the ACF switching power supply and increases the power density of the power supply system according to the dynamically and adaptively controlled dead time with high precision.

[0077] The principle and effects of the above technical solution are as follows: The present invention provides a GaN power device drive control system, including: a drain-source voltage detection module, which uses a voltage detection circuit connected in parallel across the drain and source of the switching transistor to detect the change in the drain-source voltage in real time and obtain the drain-source voltage detection information; a full-on information determination module, which determines whether the drain-source voltage detection information meets the condition for achieving full soft start according to the drain-source voltage detection information and obtains the drain-source voltage full-on determination result; an isolated control dynamic start-stop module, which controls the start and stop of the switching transistor by the driver through the isolation controller according to the drain-source voltage full-on determination result and dynamically and adaptively controls the dead time with high precision; a switching frequency power density adjustment module, which increases the switching frequency of the ACF switching power supply and the power density of the power supply system according to the dynamically and adaptively controlled dead time with high precision; it can adaptively control the dead time with high precision. By using a voltage detection circuit connected in parallel across the drain and source of the switching transistor, the change in the drain-source voltage is detected in real time. When the drain-source voltage is zero, it indicates that the switching transistor has reached the condition for achieving full soft start. At this time, the switching transistor is turned on through the isolation controller, which can effectively avoid additional power loss. Based on the ACF buck topology power supply architecture, through an optimized scheme of dynamically and adaptively adjusting the dead time, the switching frequency of the ACF switching power supply is increased, and at the same time, the efficiency of the ACF switching power supply and the power density of the power supply system are significantly improved. Aiming at the problem of increased power consumption of the soft-switching circuit caused by the drift of the dead-time window due to the change of the inter-electrode capacitance, especially the output capacitance, during the high-frequency switching process of the GaN device, an adaptive dead-time adjustment control method is proposed to improve the reliability and accuracy of the high-frequency drive control of the GaN power device. Furthermore, while the system power density is increased under high-frequency switching conditions, the power efficiency is significantly improved; it has important technical significance and remarkable effects; the output voltage is stabilized through negative feedback; stabilizing the output voltage through negative feedback includes: if the output voltage Vo increases, the control chip U4 detects this voltage signal through R26, R28, R30, C45, C46 and the connecting components to obtain the detected voltage; the control chip U4 compares this detected voltage with its internal reference voltage to generate an error signal, adjusts the current of the light-emitting diode of the optocoupler element U5A, adjusts the current of the receiving triode of U5A, adjusts the output control signals PWMH and PWML of the isolated drive control chip U3, adjusts the output signals HO and LO of the driver chip U1, adjusts the switching time of the GaN power devices Q2 and Q3, and after passing through the transformer T1A, it is fed back to the output circuit to reduce and adjust the output voltage Vo, so that the output voltage Vo tends to be stable.

[0078] In one embodiment, the drain-source voltage detection module includes:

[0079] A topology architecture structure information unit constructs an ACF buck topology power supply architecture and obtains the GaN power device and circuit structure parameters in the GaN power device control circuit;

[0080] The drain-source voltage detection unit sets a voltage detection circuit across the drain and source of the switching transistor according to the GaN power device and circuit structure parameters, and detects the change of the drain-source voltage in real time to obtain the drain-source voltage detection information.

[0081] The principle and effect of the above technical solution are as follows: The drain-source dual-terminal voltage detection module includes: a topology architecture structure information unit that constructs an ACF support topology power architecture and obtains the GaN power device and circuit structure parameters in the GaN power device control circuit; a drain-source voltage detection unit that sets a voltage detection circuit across the drain and source of the switching transistor according to the GaN power device and circuit structure parameters, detects the change of the drain-source voltage in real time, and obtains the drain-source voltage detection information; the voltage detection circuit connected in parallel across the drain and source of the switching transistor detects the change of the drain-source voltage in real time, which can significantly improve the detection accuracy of the GaN power device and the circuit structure.

[0082] In one embodiment, the fully-on information determination module includes:

[0083] The detection and docking setting condition unit receives the drain-source voltage detection information of the voltage detection circuit and sets the fully soft start condition. The fully soft start condition includes the condition that the drain-source voltage is zero.

[0084] The switch-on determination unit compares whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator according to the drain-source voltage detection information, and obtains the fully-on determination result of the drain-source voltage.

[0085] The principle and effect of the above technical solution are as follows: The fully-on information determination module includes: the detection and docking setting condition unit that receives the drain-source voltage detection information of the voltage detection circuit and sets the fully soft start condition. The fully soft start condition includes the condition that the drain-source voltage is zero. The switch-on determination unit compares whether the drain-source voltage detection information meets the condition that the drain-source voltage is zero through a comparator according to the drain-source voltage detection information, and obtains the fully-on determination result of the drain-source voltage. When the drain-source voltage is zero, it indicates that the switching transistor has reached the condition for realizing full soft start, the condition determination is more accurate, and the probability of misjudgment is significantly reduced.

[0086] In one embodiment, the isolation control dynamic start-stop module includes:

[0087] The zero-voltage soft start condition unit, according to the fully-on determination result of the drain-source voltage, when the drain-source voltage detection information meets the condition that the drain-source voltage is zero, the switching transistor reaches the condition for realizing full soft start.

[0088] The isolation controller trigger unit triggers the switching transistor on signal through the isolation controller according to the condition that the switching transistor reaches the condition for realizing full soft start. The switching transistor is turned on through the switching transistor on signal, avoiding the increase of additional losses.

[0089] The dynamic high-precision control unit shuts off the switching device when the drain-source voltage detection information does not meet the condition that the drain-source voltage is zero and the circuit is in the non-operating interval, and dynamically and adaptively controls the dead time with high precision.

[0090] The principle and effect of the above technical solution are as follows: The isolation control dynamic start-stop module includes: a zero-voltage soft-start condition unit. According to the full-open determination result of the drain-source voltage, when the drain-source voltage detection information meets the condition that the drain-source voltage is zero, the switching device reaches the condition for full soft start; an isolation controller trigger unit. According to the switching device reaching the condition for full soft start, the isolation controller triggers the switching signal of the switching device; the switching device is turned on through the switching signal of the switching device to avoid additional loss increase; the dynamic high-precision control unit shuts off the switching device when the drain-source voltage detection information does not meet the condition that the drain-source voltage is zero and the circuit is in the non-operating interval, and dynamically and adaptively controls the dead time with high precision; the switching device is turned on through the isolation controller, which can effectively avoid additional loss increase.

[0091] In one embodiment, the switching frequency power density adjustment module includes:

[0092] A power switch frequency adjustment unit that increases the switching frequency of the ACF switching power supply according to the dynamically and adaptively controlled dead time with high precision;

[0093] A power density enhancement unit of the power supply that combines the dynamically and adaptively controlled dead time with high precision and the switching frequency of the ACF switching power supply to greatly improve the efficiency of the ACF switching power supply and significantly increase the efficiency of the ACF switching power supply and the power density of the power supply system.

[0094] The principle and effect of the above technical solution are as follows: The switching frequency power density adjustment module includes: a power switch frequency adjustment unit that increases the switching frequency of the ACF switching power supply according to the dynamically and adaptively controlled dead time with high precision; a power density enhancement unit of the power supply that combines the dynamically and adaptively controlled dead time with high precision and the switching frequency of the ACF switching power supply to improve the efficiency of the ACF switching power supply and increase the power density of the power supply system; significantly improve the efficiency of the ACF switching power supply and the power density of the power supply system; propose an adaptive dead time adjustment control method to improve the reliability and accuracy of the high-frequency drive control of GaN power devices, and thus significantly improve the power efficiency while increasing the system power density under high-frequency switching conditions.

[0095] Although the embodiments of the present invention have been disclosed as above, they are not limited to only the applications listed in the specification and embodiments. It can be fully applied to various fields suitable for the present invention. For those familiar with the field, additional modifications can be easily made. Therefore, without departing from the general concept defined by the claims and the equivalent scope, the present invention is not limited to the specific details and the examples shown and described herein.

Claims

1. A GaN power device driving control method, characterized in that: include: S10, detecting the drain-source voltage change in real time by connecting a voltage detection circuit in parallel to both ends of the drain and source of the switch tube to obtain drain-source voltage detection information; S20, determining whether the drain-source voltage detection information meets the conditions for achieving full soft-turn-on based on the drain-source voltage detection information, and obtaining a drain-source voltage full-turn-on determination result; S30, according to the result of the drain-source voltage being fully turned on, the driver is controlled by the isolation controller to start and stop the switch tube, and the dead time is dynamically and adaptively controlled with high precision; S40, based on dynamic adaptive high-precision control of dead time, improves the switching frequency of the ACF switching power supply and increases the power density of the power supply system.

2. A GaN power device driving control method according to claim 1, characterized in that: S10 includes: S101, constructing an ACF topology power architecture, and obtaining GaN power device and circuit structure parameters in the GaN power device control circuit; S102, according to the GaN power device and circuit structure parameters, a voltage detection circuit is set at both ends of the drain and source of the switch tube to detect the drain-source voltage change in real time and obtain drain-source voltage detection information.

3. A GaN power device driving control method according to claim 1, characterized in that: The S20 includes: S201, receiving drain-source voltage detection information of a voltage detection circuit; setting a complete soft-on condition; the complete soft-on condition includes a drain-source voltage zero condition; S202 , according to the drain-source voltage detection information, comparing the drain-source voltage detection information with a comparator to see whether it meets the drain-source voltage zero condition, and obtaining a drain-source voltage fully turned-on determination result.

4. The GaN power device driving control method according to claim 1, characterized in that: S30 includes: S301, according to the drain-source voltage fully turned-on determination result, when the drain-source voltage detection information meets the drain-source voltage zero condition, the switch tube reaches the fully soft-turn-on condition; S302, according to the switch tube reaching the fully soft-start condition, triggering the switch tube start signal through the isolation controller; turning on the switch tube through the switch tube start signal to avoid additional loss increase; S303, when the drain-source voltage detection information does not meet the drain-source voltage zero condition and the circuit is in a non-working range, the switch tube is controlled to be turned off, and the dead time is dynamically adaptively controlled with high precision.

5. The driving control method of a GaN power device according to claim 1, characterized in that: S40 includes: S401, increasing the switching frequency of the ACF switching power supply according to dynamic adaptive high-precision control of the dead time; S402, combining dynamic adaptive high-precision control of dead time and ACF switching power supply switching frequency, significantly improves the ACF switching power supply efficiency and power density of the power supply system.

6. A GaN power device drive control system, characterized in that: include: The drain-source dual-terminal voltage detection module detects the drain-source voltage change in real time and obtains the drain-source voltage detection information by connecting the voltage detection circuit in parallel at both ends of the drain and source of the switch tube; The fully-on information determination module determines whether the drain-source voltage detection information meets the conditions for achieving fully soft-on based on the drain-source voltage detection information, and obtains the drain-source voltage fully-on determination result; The isolation control dynamic start-stop module controls the driver to start and stop the switch tube through the isolation controller according to the result of the drain-source voltage being fully turned on, and dynamically and adaptively controls the dead time with high precision; The switching frequency power density adjustment module controls the dead time according to dynamic adaptive high-precision, improves the switching frequency of the ACF switching power supply, and increases the power density of the power supply system.

7. A GaN power device driving control system according to claim 6, characterized in that: Drain-source dual-terminal voltage detection module, including: The topology structure information unit builds the ACF topology power supply architecture and obtains the GaN power device and circuit structure parameters in the GaN power device control circuit; The drain-source voltage detection unit sets a voltage detection circuit at both ends of the drain and source of the switch tube according to the GaN power device and circuit structure parameters, detects the drain-source voltage change in real time, and obtains the drain-source voltage detection information.

8. The GaN power device driving control system according to claim 6, characterized in that: Fully enable the information determination module, including: The detection docking setting condition unit receives the drain-source voltage detection information of the voltage detection circuit; sets the complete soft-opening condition; the complete soft-opening condition includes the drain-source voltage being zero condition; The switch-on determination unit compares the drain-source voltage detection information with a comparator to see whether the drain-source voltage detection information meets the drain-source voltage zero condition, and obtains a drain-source voltage fully-on determination result.

9. A GaN power device driving control system according to claim 6, characterized in that: Isolation control dynamic start and stop module, including: Zero-voltage soft-on condition unit, based on the drain-source voltage fully turned-on judgment result, when the drain-source voltage detection information meets the drain-source voltage zero condition, the switch tube reaches the fully soft-on condition; The isolation controller trigger unit triggers the switch tube start signal through the isolation controller according to the switch tube reaching the fully soft start condition; the switch tube is turned on by the switch tube start signal to avoid additional loss increase; The dynamic high-precision control unit controls the switch tube to be turned off when the drain-source voltage detection information does not meet the drain-source voltage zero condition and the circuit is in the non-working range, and dynamically and adaptively controls the dead time with high precision.

10. A GaN power device driving control system according to claim 6, characterized in that: Switching frequency power density adjustment module, including: The power switching frequency adjustment unit increases the switching frequency of the ACF switching power supply based on dynamic adaptive high-precision control of the dead time; The power density enhancement unit combines dynamic adaptive high-precision control of dead time and ACF switching power supply switching frequency to significantly improve the efficiency of the ACF switching power supply and the power density of the power supply system.

Images