Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a chamber having a space in which a plasma is generated from a process gas mixture, and a substrate is processed with the generated plasma; a gas supply for supplying the process gas mixture to the chamber through a gas delivery line connected to a gas inlet provided in the chamber; and a gas analyzer for analyzing, outside the chamber, information about a plurality of processing gases constituting the processing gas mixture by receiving a portion of the processing gas mixture from a sample transfer line connected to the gas transfer line.

Description

[0001] Cross - reference to related patent applications

[0002] This application claims the benefit of Korean Patent Application No. 10 - 2023 - 0182147, filed with the Korean Intellectual Property Office on December 14, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus capable of analyzing a processing gas for plasma processing in a non - plasma state and a substrate processing method using the same. Background Art

[0004] Currently, due to the high integration of semiconductor elements and the increase in the size of semiconductor substrates, semiconductor systems are pursuing high capacity and high functionality. Since more elements need to be integrated in a limited area accordingly, semiconductor systems are being researched and developed to achieve ultra - fineness and high integration of desired patterns.

[0005] A substrate processing apparatus is an apparatus for processing a substrate by using a reaction gas in a plasma state by activating and converting the reaction gas into a plasma state. For example, the substrate processing apparatus includes a plasma etching apparatus for etching a structure formed on the surface of a substrate, or an apparatus for forming a layer on at least one surface of a substrate by plasma - enhanced chemical vapor deposition. According to the method of generating plasma, plasma is classified into capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance (ECR) plasma, and surface wave plasma (SWP) using microwaves, etc. For the CCP type, a reaction gas is converted into a plasma state by an electric field formed by selectively applying high - frequency radio - frequency (RF) power to a plurality of electrodes installed in a processing chamber. For the ICP type, a reaction gas is converted into a plasma state by a magnetic field or an electric field formed by applying high - frequency RF power to a coil wound outside the processing chamber.

[0006] In a substrate processing apparatus, a mixture of a plurality of processing gases (hereinafter referred to as a processing gas mixture) can be supplied into a processing chamber. The plurality of processing gases can be used as reaction precursors for a plasma deposition process or as etching gases for a plasma etching process.

[0007] When processing a substrate, it is necessary to check the components or types of the processing gas used for processing, the content ratio (or mixing ratio) of the various processing gases constituting the processing gas mixture, etc. For this purpose, the processing gas is usually converted into a plasma state in a processing chamber and then analyzed using an optical emission spectrometer (OES). When using OES, the processing gas can be analyzed only in the state where plasma is generated.

[0008] In particular, when a plurality of processing gases are supplied into the processing chamber together and when using OES, reaction product gases generated due to the reaction between the supplied processing gases or by-product gases are also detected, and thus it is not easy to verify whether the processing gas is accurately supplied into the processing chamber as designed.

[0009] For example, gases based on fluorocarbons such as CF4, CHF3, and C4F6 are mixed and used as the processing gas for a plasma etching process, and in order to perform the etching process normally, it is necessary to verify whether each processing gas is flowing normally, or whether the content ratio or mixing ratio of the fluorocarbon-based gases in the mixture is appropriate.

[0010] However, when using OES to analyze the plasma in the processing chamber as described above, since the plasma includes a variety of reaction product gases and by-product gases, it is not easy to check whether the processing gas is normal. Summary of the Invention

[0011] The present invention provides a substrate processing apparatus and a substrate processing method using the same. The substrate processing apparatus can accurately analyze information about the processing gas, such as information indicating whether the processing gas for processing the substrate by using plasma is flowing normally or information indicating whether the mixing ratio of the various processing gases constituting the processing gas mixture is normal, in a non-plasma state without generating plasma, and can accurately control the supply of the processing gas based on the analysis result. However, the above description is an example, and the scope of the present invention is not limited thereto.

[0012] According to an aspect of the present invention, there is provided a substrate processing apparatus including: a chamber having a space where plasma is generated from a processing gas mixture and the generated plasma is used to process a substrate; a gas supplier for supplying the processing gas mixture to the chamber through a gas delivery line connected to a gas inlet provided in the chamber; and a gas analyzer for analyzing information about the various processing gases constituting the processing gas mixture by receiving a part of the processing gas mixture from a sample delivery line connected to the gas delivery line outside the chamber.

[0013] The gas analyzer may include a gas chromatograph and a mass spectrometer.

[0014] The gas analyzer can be set as follows: the processed gas mixture received through the sample transfer line is first introduced into the gas chromatograph, and the gas discharged from the gas chromatograph is introduced into the mass spectrometer.

[0015] The gas chromatograph can separate the multiple processed gases that make up the introduced processed gas mixture by type and introduce the multiple separated processed gases into the mass spectrometer.

[0016] The mass spectrometer can include: an ionizer for ionizing the introduced processed gas; a mass filter for separating ions based on the mass-to-charge (m / z) ratio; and a detector for detecting information about the processed gas based on the m / z ratio.

[0017] The information about the multiple processed gases can include the type of the processed gas in the processed gas mixture and the mixing ratio of the processed gas.

[0018] The substrate processing equipment can further include a controller for receiving the detected information about the multiple processed gases from the gas analyzer and comparing the received information with the pre-stored processed gas information to determine whether the processing of the substrate by the processed gas mixture is appropriate.

[0019] The controller can control the supply of the processed gas mixture from the gas supplier to the chamber based on the result of comparing the received information with the pre-stored processed gas information.

[0020] The controller can receive the type of the processed gas in the processed gas mixture or the mixing ratio of the processed gas as the information about the processed gas and give control based on the received information to cut off the supply of the processed gas mixture from the gas supplier to the chamber.

[0021] The controller can receive the mixing ratio of the processed gas in the processed gas mixture as the information about the processed gas and control the flow rate ratio between the multiple processed gases that make up the processed gas mixture based on the received information.

[0022] The space for processing the substrate can be a space for performing a process of plasma etching to form a structure on at least one surface of the substrate or a process of forming a layer on at least one surface of the substrate by plasma chemical vapor deposition.

[0023] The processed gas can include one or more of a hydrocarbon-based gas and a fluorocarbon-based gas, and also includes an inert gas.

[0024] The processing gas may include one or more of C4F6, C4F8, CF4, CHF3, CH3F, CH4, and C2H2.

[0025] According to another aspect of the present invention, there is provided a substrate processing method for processing a substrate by using plasma generated from a processing gas mixture in a chamber, the substrate processing method including: supplying the processing gas mixture into the chamber; and analyzing information about a plurality of processing gases constituting the processing gas mixture by receiving a part of the processing gas mixture outside the chamber, wherein the information about the plurality of processing gases includes the types of the processing gases in the processing gas mixture and the mixing ratio of the processing gases.

[0026] Analyzing the information about the plurality of processing gases may include: separating the plurality of processing gases constituting the received processing gas mixture by type; and ionizing the plurality of separated processing gases, separating ions based on the mass-to-charge (m / z) ratio, and detecting the information about the plurality of processing gases.

[0027] The substrate processing method may further include, after analyzing the information about the plurality of processing gases, comparing the analyzed information about the plurality of processing gases with pre-stored processing gas information to determine whether the processing of the substrate by the processing gas mixture is appropriate.

[0028] The substrate processing method may further include cutting off the supply of the processing gas mixture into the chamber when it is determined that the processing of the substrate is inappropriate.

[0029] The substrate processing method may further include, when it is determined that the processing of the substrate is inappropriate, controlling the flow rate ratio between the plurality of processing gases constituting the processing gas mixture based on the information about the plurality of processing gases.

[0030] The substrate processing method may be a process of plasma etching a structure formed on at least one surface of the substrate, or a process of forming a layer on at least one surface of the substrate by plasma chemical vapor deposition.

[0031] According to another aspect of the present invention, there is provided a substrate processing apparatus, comprising: a chamber having a space where plasma is generated from a processing gas mixture and the generated plasma is used to process a substrate; a gas supplier for supplying the processing gas mixture to the chamber through a gas delivery line connected to a gas inlet provided in the chamber; a gas analyzer for analyzing information on a plurality of processing gases constituting the processing gas mixture by receiving a portion of the processing gas mixture outside the chamber through a sample delivery line connected to the gas delivery line; and a controller for receiving the detected information on the plurality of processing gases from the gas analyzer and comparing the received information with pre-stored processing gas information to determine whether the processing of the substrate by the processing gas mixture is appropriate; wherein the space where the substrate is processed is a space for performing plasma etching to form a structure on at least one surface of the substrate or a space for forming a layer on at least one surface of the substrate by plasma chemical vapor deposition, wherein the gas analyzer includes a gas chromatograph and a mass spectrometer, and wherein the controller controls the supply of the processing gas mixture from the gas supplier to the chamber based on a result of comparing the received information with the pre-stored processing gas information. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other features and advantages of the present invention will become more apparent by describing embodiments of the present invention in detail with reference to the accompanying drawings, in which:

[0033] Figure 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention;

[0034] Figure 2 is Figure 1 a detailed view of the gas supplier and the gas analyzer shown in

[0035] Figure 3 is connected to Figure 2 a schematic view of a controller of the gas supplier and the gas analyzer shown in

[0036] Figure 4 is a flowchart of a substrate processing method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0037] Hereinafter, the present invention will be described in detail by explaining embodiments of the present invention with reference to the accompanying drawings.

[0038] However, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those of ordinary skill in the art. In the drawings, the thickness or size of layers is exaggerated for clarity and ease of explanation.

[0039] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that when used in this specification, the terms "comprises" and / or "comprising" specify the presence of stated features, integers, steps, operations, elements, components, and / or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0040] Embodiments of the present invention are described herein with reference to schematic illustrations of idealized embodiments (and intermediate structures) of the invention. Accordingly, variations from the shapes as illustrated by, for example, manufacturing techniques and / or tolerances are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions shown herein but should include deviations in shapes that result, for example, from manufacturing.

[0041] Figure 1 is a schematic view of a substrate processing apparatus 10 according to an embodiment of the present invention, and the substrate processing apparatus 10 is a plasma etching apparatus using inductively coupled plasma (ICP). Figure 1 The substrate processing apparatus 10 is an example, and the substrate processing apparatus according to the present invention is not limited to Figure 1 the substrate processing apparatus 10, and may be any apparatus for processing a substrate by using plasma processing, such as an etching apparatus for generating another type of plasma or a deposition apparatus for performing plasma chemical vapor deposition.

[0042] Referring to Figure 1 , the substrate processing apparatus 10 includes a chamber 103 having a space for generating plasma. A substrate support 104 is included in the chamber 103. The substrate support 104 may be located at the bottom of the chamber 103 to support a substrate W. The substrate W may include, for example, a silicon wafer for manufacturing semiconductor devices.

[0043] The gas supplier 140 is a system for supplying various process gases required for plasma processing into the chamber 103 through a gas delivery line 150 connected to a gas inlet 101 provided on the chamber 103. The process gases required for plasma processing can be, for example, etching gases required for a plasma etching process. The process gases can also include carrier gases for carrying the etching gases. A process gas mixture can be supplied from the gas supplier 140 into the chamber 103 through the gas inlet 101 along the gas delivery line 150.

[0044] Before introducing the process gas mixture into the chamber 103 through the gas inlet 101, an additional gas delivery line 180 is coupled to the gas delivery line 150. A portion of the process gas mixture transported through the gas delivery line 150 is not introduced into the chamber 103 but is transported to a gas analyzer 190 as a sample gas for gas analysis. The gas delivery line 180 through which the sample gas is transported is referred to as the sample delivery line 180. A valve 181 is installed on the sample delivery line 180, and the delivery of the sample gas is controlled based on the open / closed state of the valve 181. By operating the valve 181 installed on the sample delivery line 180, the process gas mixture flowing toward the chamber 103 can be moved to the gas analyzer 190 to analyze the process gases constituting the process gas mixture.

[0045] The gas analyzer 190 can receive the process gas mixture, separate the process gas mixture into individual process gases, and perform qualitative and quantitative analyses on the separated process gases.

[0046] The following will refer to Figure 2 describe in detail the gas supplier 140 and the gas analyzer 190.

[0047] The gas injector 102 is a structure provided with a plurality of injection holes 106 through which the process gas supplied from the gas supplier 140 into the chamber 103 through the gas inlet 101 can pass to uniformly supply the process gas onto the substrate W, and the gas injector 102 is provided above the substrate W.

[0048] To generate plasma from the process gas supplied into the chamber 103, a spiral antenna 107 for supplying power is provided at the top of the chamber 103. A first high-frequency power supply 108 is connected to the antenna 107. The first high-frequency power supply 108 includes a radio frequency (RF) power supply. After the process gas is supplied into the chamber 103, when high-frequency power is applied from the first high-frequency power supply 108 to the antenna 107, the electromagnetic waves generated from the antenna 107 are supplied into the chamber 103 to excite the process gas to a plasma state.

[0049] The substrate support 104 can be used to adsorb the substrate W onto the dielectric surface or release the substrate W from the dielectric surface by controlling the electrostatic force generated by the electrodes disposed therein due to dielectric polarization. To apply a negative bias voltage to the substrate W, a second high-frequency power supply 109 for applying high-frequency power can be connected to the substrate support 104. However, the substrate W is not limited thereto, and can also be held by a mechanical jig, a vacuum chuck, or the like.

[0050] The substrate processing apparatus 10 includes a vent hole 105 provided in a part of the chamber 103 to discharge the internal gas, and a vent line 120 connected to the vent hole 105 and having an automatic pressure controller (APC) valve 121 mounted on the vent line 120. A pressure sensor 123 for measuring the pressure inside the chamber 103 is mounted on the vent line 120. The vent line 120 can be connected to a vacuum pump 122 to serve as a passage through which by-products generated in the chamber 103 are discharged to the outside of the chamber 103, or to form a vacuum in the internal space of the chamber 103.

[0051] The APC valve 121 is a valve for regulating the pressure inside the chamber 103, and when the vacuum pump 122 operates, the pressure inside the chamber 103 is regulated by controlling the opening or closing of the APC valve 121 based on the pressure inside the chamber 103 measured by the pressure sensor 123.

[0052] Figure 2 is Figure 1 A detailed view of the gas supplier 140 and the gas analyzer 190 shown in.

[0053] Reference Figure 2 , the gas supplier 140 includes: gas reservoirs 142a, 144a, and 146a; gas delivery lines 142c, 144c, and 146c for delivering the processing gas from the gas reservoirs 142a, 144a, and 146a to the chamber 103; and mass flow controllers (MFCs) 142b, 144b, and 146b for controlling the flow rate of the processing gas flowing through the gas delivery lines 142c, 144c, and 146c. The processing gas delivered from the gas reservoirs 142a, 144a, and 146a through the gas delivery lines 142c, 144c, and 146c is introduced into a mixer 148 and mixed into a processing gas mixture, and then is delivered through a gas delivery line 150 connected to the gas inlet 101 and introduced into the chamber 103 as shown by the arrow (see Figure 1 ).

[0054] The gas storage vessels 142a, 144a, and 146a store process gases for plasma etching, and the process gases include composite gases each composed of multiple elements. The process gases may also include carrier gases for transporting the composite gases. For example, the process gases further include inert gases. The composite gases may include hydrocarbon-based gases or fluorocarbon-based gases. The hydrocarbon-based process gases may include one or more of CH4 and C2H2, and the fluorocarbon-based process gases may include one or more of C4F6, C4F8, CF4, CHF3, and CH3F.

[0055] Referring Figure 2 , the gas analyzer 190 includes a gas chromatograph 192 and a mass spectrometer 194. When the valve 181 is in the open state, the process gas mixture flows into the sample delivery line 180 connected to the gas delivery line 150, and then is delivered and introduced into the gas chromatograph 192 of the gas analyzer 190. The gas chromatograph 192 can separate the multiple process gases constituting the process gas mixture.

[0056] The gas chromatograph 192 includes a column with a stationary phase, and the process gas mixture passes through the column with the stationary phase. The process gases constituting the process gas mixture come into contact with the stationary phase to repeatedly adsorb and distribute. In this case, due to the different distribution coefficients of the stationary phase, the process gases of the process gas mixture move through the column at different speeds, and the speed difference through the column can be used to separate the process gases from each other. The gas chromatograph 192 is well-known in the field of material analysis, and thus its detailed description is not provided herein.

[0057] The process gases separated by the gas chromatograph 192 are discharged and then introduced into the mass spectrometer 194.

[0058] The mass spectrometer 194 ionizes the process gases separated by the gas chromatograph 192 and then calculates the mass spectrum to perform qualitative and quantitative analysis of the process gases. Qualitative analysis is to identify the material types of the process gases, while quantitative analysis is to determine the relative content ratio (or mixing ratio) of the process gases in the process gas mixture.

[0059] The mass spectrometer 194 includes an ionizer 194a for ionizing the introduced process gases, a mass filter 194b for separating ions based on the mass-to-charge (m / z) ratio, and a detector 194c for detecting information about the process gases based on the m / z ratio. The mass spectrometer 194 is well-known in the field of material analysis, and thus its detailed description is not provided herein.

[0060] The mass spectrometer 194 can detect which material each of the processed gases separated by the gas chromatograph 192 is. In addition, based on the analysis results of the processed gases, the content ratio (or mixing ratio) of the processed gases in the processed gas mixture can be obtained.

[0061] Using the gas analyzer 190 of the present invention, before introducing the processed gas mixture into the chamber 103 to process the substrate W, by using a part of the processed gas mixture as a sample, the types of various processed gases constituting the processed gas mixture can be detected outside the chamber 103. In addition, the mixing ratio of the processed gases in the processed gas mixture can be detected. The above analysis results can be used to determine in real time whether the processed gases are being supplied normally as originally designed.

[0062] According to the present invention, different from the existing gas analysis methods, in order to analyze the processed gases, the processed gases do not need to be introduced into the chamber 103 and converted into plasma, and the processed gases can be accurately analyzed because various by-product gases are not generated by the reaction between the processed gases in the chamber 103.

[0063] According to an embodiment of the present invention, the substrate processing apparatus 10 may further include a controller 170 that receives the detected information about various processed gases from the gas analyzer 190, compares the received information with the pre-stored processed gas information to determine whether the processing of the substrate W by the processed gas mixture is appropriate, and controls the supply of the processed gas mixture from the gas supplier 140 to the chamber 103 based on the comparison result.

[0064] In addition to Figure 2 the gas supplier 140 and the gas analyzer 190 shown in Figure 3 a controller 170 is also shown. Referring to Figure 3 , the controller 170 receives the analysis information about the processed gases from the mass spectrometer 194. For example, the detector 194c of the mass spectrometer 194 can send the detected information about the processed gases to the controller 170. The controller 170 is connected to a memory 300 that pre-stores information about the processed gases for plasma processing.

[0065] Figure 4 is a flowchart of a substrate processing method S100 according to an embodiment of the present invention. Referring to Figure 4 , the substrate processing method S100 according to an embodiment of the present invention includes a processed gas mixture supply step S110, a processed gas mixture analysis step S120, and a processing control step S130.

[0066] The processing gas mixture supply step S110 and the processing gas mixture analysis step S120 have been described above, and thus the processing control step S130 will now be described in detail.

[0067] The detector 194c of the mass spectrometer 194 sends the detected analysis information about the processing gas to the controller 170. The controller 170 can receive information from the memory 300, retrieve the conditions related to the processing gas for processing the substrate W, and then compare the conditions with the information received from the mass spectrometer 194. By the comparison, it is determined whether the processing of the substrate W by the processing gas mixture is appropriate.

[0068] For example, the compared information includes the type of the processing gas and the mixing ratio of the processing gas. According to the comparison result, when the processing gas supplied to the chamber 103 for processing the substrate W is different from the processing gas in the processing recipe stored in the memory 300, it can be determined that the processing of the substrate W is inappropriate. Optionally, when the mixing ratio of the processing gases constituting the processing gas mixture is different from the mixing ratio in the processing recipe, it can be determined that the processing of the substrate W is inappropriate. When it is determined that the processing of the substrate W is inappropriate, the controller 170 can respond in real time by controlling the gas supplier 140.

[0069] For example, when it is determined that the substrate W cannot be processed as expected due to the type of the introduced processing gas being different from the originally designed type or the mixing ratio between the processing gases being significantly different, the controller 170 can cut off the supply of the processing gas mixture to the chamber 103 by controlling the gas supplier 140. Refer to Figure 3 The controller 170 can cut off the supply of the processing gas mixture to the chamber 103 by applying an electrical signal to the MFCs 142b, 144b, and 146b to prevent the delivery of the processing gas. In addition, the controller 170 can form a vacuum atmosphere again inside the chamber 103 by continuously operating the vacuum pump 122 connected to the vent hole 105 of the chamber 103 to discharge the processing gas mixture remaining in the chamber 103 through the vent hole 105.

[0070] As another example, the controller 170 can give control to modify in real time the difference in the mixing ratio of the processing gases constituting the processing gas mixture while maintaining the supply of the processing gas mixture to the chamber 103.

[0071] Refer to Figure 3, for example, the controller 170 can retrieve information about the process gas received from the mass spectrometer 194 from the memory 300, and then determine that the mixing ratio between the process gases is different from the mixing ratio designed by the process recipe and thus the mixing ratio of the process gases needs to be modified. In this case, the controller 170 can control the mixing ratio between the process gases in the mixer 148 by separately controlling the flow rates of the process gases introduced into the mixer 148.

[0072] For example, the controller 170 can control the MFCs 142b, 144b, and 146b to control the flow rates of the process gases passing through the MFCs 142b, 144b, and 146b such that the mixing ratio between the process gases is equal to the value in the preset process recipe. In this case, the processing of the substrate W in the chamber 103 is not interrupted, and the mixing ratio between the process gases introduced during the processing of the substrate W is modified to process the substrate W. In this way, the process gases can be controlled in real time to be supplied to the chamber 103 under the pre-designed processing conditions.

[0073] According to the above-described embodiments of the present invention, by precisely analyzing the process gases used for processing the substrate using plasma, the normal supply of the process gases can be checked in a non-plasma state. In addition, by controlling the processing conditions regarding the process gas flow ratio or the process gas supply amount based on the above-described analysis, high-quality plasma processing can be stably performed. However, the scope of the present invention is not limited to the above effects.

[0074] Although the present invention has been specifically shown and described with reference to the embodiments of the present invention, those of ordinary skill in the art will understand that various changes in form and detail can be made in the present invention without departing from the scope of the present invention defined by the appended claims.

Claims

1. Substrate processing equipment, including: a chamber having a space in which plasma is generated from a process gas mixture and a substrate is processed using the generated plasma; a gas supplier for supplying the process gas mixture to the chamber through a gas delivery line connected to a gas inlet disposed in the chamber; as well as A gas analyzer for analyzing information on a plurality of process gases constituting the process gas mixture outside the chamber by receiving a portion of the process gas mixture from a sample delivery line connected to the gas delivery line.

2. The substrate processing apparatus according to claim 1, wherein: The gas analyzer includes a gas chromatograph and a mass spectrometer.

3. The substrate processing apparatus according to claim 2, wherein: The gas analyzer is arranged in such a manner that the process gas mixture received through the sample delivery line is first introduced into the gas chromatograph, and the exhaust gas from the gas chromatograph is introduced into the mass spectrometer.

4. The substrate processing apparatus according to claim 2, wherein: The gas chromatograph separates the plurality of process gases constituting the introduced process gas mixture by type and introduces the plurality of separated process gases into the mass spectrometer.

5. The substrate processing apparatus according to claim 4, wherein: The mass spectrometer comprises: an ionizer for ionizing the introduced process gas; a mass filter for separating ions based on their mass-to-charge ratio; and A detector is configured to detect information about the process gas based on the mass-to-charge ratio.

6. The substrate processing apparatus according to claim 1, wherein: The information about the plurality of process gases includes types of the process gases and mixing ratios of the process gases in the process gas mixture.

7. The substrate processing apparatus according to claim 5, further comprising: A controller is configured to receive the detected information about the plurality of process gases from the gas analyzer and compare the received information with pre-stored process gas information to determine whether processing of the substrate by the process gas mixture is appropriate.

8. The substrate processing apparatus according to claim 7, wherein: The controller controls supply of the process gas mixture from the gas supplier to the chamber based on a result of comparing the received information with the pre-stored process gas information.

9. The substrate processing apparatus according to claim 8, wherein: The controller receives a type of the process gas or a mixing ratio of the process gas in the process gas mixture as information about the process gas, and gives control to cut off supply of the process gas mixture from the gas supplier to the chamber based on the received information.

10. The substrate processing apparatus according to claim 8, wherein: The controller receives a mixing ratio of the process gases in the process gas mixture as information on the process gases, and controls a flow ratio between the plurality of process gases constituting the process gas mixture based on the received information.

11. The substrate processing apparatus according to claim 1, wherein: The space in which the substrate is processed is a space in which a process of plasma etching a structure formed on at least one surface of the substrate or a process of forming a layer on at least one surface of the substrate by plasma chemical vapor deposition is performed.

12. The substrate processing apparatus according to claim 1, wherein: The process gas includes one or more of a hydrocarbon-based gas and a fluorocarbon-based gas, and further includes an inert gas.

13. The substrate processing apparatus according to claim 12, wherein: The processing gas includes one or more of C4F6, C4F8, CF4, CHF3, CH3F, CH4 and C2H2.

14. A substrate processing method for processing a substrate by using plasma generated from a processing gas mixture in a chamber, the substrate processing method comprising: supplying the process gas mixture into the chamber; as well as analyzing information about a plurality of process gases constituting the process gas mixture by receiving a portion of the process gas mixture outside the chamber, The information about the plurality of process gases includes types of the process gases and mixing ratios of the process gases in the process gas mixture.

15. The substrate processing method according to claim 14, wherein: Analyzing information about the plurality of process gases includes: separating by type the plurality of process gases comprising the received process gas mixture; and The plurality of separated process gases are ionized, the ions are separated based on mass-to-charge ratio, and information about the plurality of process gases is detected.

16. The substrate processing method according to claim 14, further comprising: After analyzing the information about the plurality of process gases, the analyzed information about the plurality of process gases is compared with pre-stored process gas information to determine whether processing of the substrate by the process gas mixture is appropriate.

17. The substrate processing method according to claim 16, further comprising: When processing of the substrate is determined to be unsuitable, supply of the process gas mixture into the chamber is cut off.

18. The substrate processing method according to claim 16, further comprising: When it is determined that the processing of the substrate is not appropriate, a flow ratio between the plurality of process gases constituting the process gas mixture is controlled based on the information about the plurality of process gases.

19. The substrate processing method according to claim 14, wherein: The substrate processing method is a process of plasma etching a structure formed on at least one surface of the substrate, or a process of forming a layer on at least one surface of the substrate by plasma chemical vapor deposition.

20. Substrate processing equipment, including: a chamber having a space in which plasma is generated from a process gas mixture and a substrate is processed using the generated plasma; a gas supplier for supplying the process gas mixture to the chamber through a gas delivery line connected to a gas inlet disposed in the chamber; a gas analyzer for analyzing information about a plurality of process gases constituting the process gas mixture outside the chamber by receiving a portion of the process gas mixture from a sample delivery line connected to the gas delivery line; as well as a controller for receiving the detected information about the plurality of process gases from the gas analyzer and comparing the received information with pre-stored process gas information to determine whether processing of the substrate by the process gas mixture is appropriate; wherein the space in which the substrate is processed is a space in which a process of plasma etching a structure formed on at least one surface of the substrate is performed or a process of forming a layer on at least one surface of the substrate by plasma chemical vapor deposition is performed, Wherein, the gas analyzer includes a gas chromatograph and a mass spectrometer, and The controller controls supply of the process gas mixture from the gas supplier to the chamber based on a result of comparing the received information with the pre-stored process gas information.

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