Manufacturing method, substrate processing method, and method for controlling substrate processing apparatus

Abstract

The invention discloses a manufacturing method, a substrate processing method, and a control method of a substrate processing apparatus. Specifically, the substrate processing method includes, in a case where a first processing liquid is supplied to a second position of a rotating substrate, supplying a second processing liquid of a different type from the first processing liquid to the first position of the substrate, the first position being closer to a center of the substrate than the second position, when the supply of the first processing liquid is continued after a set time elapses from the time when the supply of the second processing liquid is started, the nozzle that supplies the first processing liquid moves.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2023 - 0183585, filed with the Korean Intellectual Property Office on December 15, 2023, the entire content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a manufacturing method, a substrate processing method, and a substrate processing apparatus. Background Art

[0004] To manufacture semiconductor devices, various processes such as photolithography, etching, ashing, ion implantation, and thin - film deposition are used to form desired patterns on a substrate (such as a wafer). Various processing liquids and processing gases are used in each process, and particles and process by - products are generated during the process. A cleaning process is performed before and after each process to remove these particles and process by - products from the substrate. Summary of the Invention

[0005] The present invention is directed to providing a manufacturing method, a substrate processing method, and a control method for a substrate processing apparatus that can effectively process a substrate.

[0006] The present invention is directed to providing a manufacturing method, a substrate processing method, and a control method for a substrate processing apparatus that can effectively clean a substrate.

[0007] The present invention is further directed to providing a manufacturing method, a substrate processing method, and a control method for a substrate processing apparatus that can replace a rinse liquid supplied to a substrate with an organic solvent to form a uniform organic solvent liquid film on the substrate.

[0008] The present invention is further directed to providing a manufacturing method, a substrate processing method, and a control method for a substrate processing apparatus that can uniformly form an organic solvent liquid film on a substrate to improve the drying efficiency of the substrate by a supercritical fluid.

[0009] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand the unmentioned problems from the following description.

[0010] An exemplary embodiment of the present invention provides a method for processing a substrate, the method including: supplying a second processing liquid of a different type from the first processing liquid to a first position of the substrate while supplying the first processing liquid to a second position of the rotating substrate, the first position being closer to the center of the substrate than the second position, wherein the nozzle for supplying the first processing liquid moves when the supply of the first processing liquid continues after a set time has elapsed from the time when the supply of the second processing liquid starts.

[0011] According to an exemplary embodiment, the nozzle may move in a direction away from the center of the substrate while continuing to supply the first processing liquid.

[0012] According to an exemplary embodiment, the first processing liquid and the second processing liquid may be set to have different surface tensions, and the set time may be set based on the time for the second processing liquid supplied to the first position to reach the second position.

[0013] According to an exemplary embodiment, the set time may be set to a time immediately before the second processing liquid supplied to the first position meets the first processing liquid supplied to the second position, or to a time within a threshold time after the first processing liquid and the second processing liquid meet.

[0014] According to an exemplary embodiment, the threshold time may be a time period of no more than 2 seconds after the second processing liquid supplied to the first position meets the first processing liquid supplied to the second position.

[0015] According to an exemplary embodiment, as the rotation speed of the substrate is higher, the set time may be set shorter.

[0016] According to an exemplary embodiment, as the supply flow rate per unit time of the second processing liquid supplied to the substrate is larger, the set time may be set shorter.

[0017] According to an exemplary embodiment, the second processing liquid may be an organic solvent, and the first processing liquid may be deionized water.

[0018] Another exemplary embodiment of the present invention provides a manufacturing method, the manufacturing method including: a liquid processing operation that supplies a processing liquid to a rotating substrate to process the substrate; and a drying operation that supplies a supercritical fluid to the substrate to process the substrate after the liquid processing operation, wherein the liquid processing operation includes: a first liquid processing operation that supplies a first processing liquid to a first position and a second position of the rotating substrate that is farther from the center of the substrate than the first position; and a second liquid processing operation that supplies a second processing liquid having a different surface tension from the first processing liquid to the first position of the rotating substrate, and supplies the first processing liquid to the second position of the rotating substrate, and the second liquid processing operation includes: moving the nozzle that supplies the first processing liquid in a direction away from the center of the substrate while supplying the first processing liquid after the supply of the second processing liquid starts and after a set time has elapsed.

[0019] According to an exemplary embodiment, the set time can be set based on the time for the second processing liquid supplied to the first position to reach the second position.

[0020] According to an exemplary embodiment, the set time can be set to a time immediately before the second processing liquid supplied to the first position meets the first processing liquid supplied to the second position, or to a time within a threshold time after the first processing liquid meets the second processing liquid.

[0021] According to an exemplary embodiment, the threshold time can be a time period not exceeding 2 seconds after the second processing liquid supplied to the first position meets the first processing liquid supplied to the second position.

[0022] According to an exemplary embodiment, the moving speed of the nozzle in the second liquid processing operation can be equal to or lower than the diffusion rate of the second processing liquid supplied to the first position in the second liquid processing operation.

[0023] According to an exemplary embodiment, the liquid processing operation further includes: a third liquid processing operation that supplies the second processing liquid to the first position of the rotating substrate after the second liquid processing operation to form a liquid film.

[0024] According to an exemplary embodiment, the first processing liquid can have a greater surface tension than the second processing liquid.

[0025] According to an exemplary embodiment, the first processing liquid can be deionized water, and the second processing liquid can be isopropyl alcohol.

[0026] Another exemplary embodiment of the present invention provides a control method for a substrate processing apparatus, the substrate processing apparatus including: a substrate support chuck for supporting and rotating a substrate; a first nozzle for supplying a first processing liquid to the substrate supported on the substrate support chuck; a second nozzle for supplying the first processing liquid to the substrate supported on the substrate support chuck; and a third nozzle for supplying a second processing liquid of a different type from the first processing liquid to the substrate supported on the substrate support chuck, the control method including: supplying the first processing liquid to a central region of the substrate supported and rotated on the substrate support chuck through the first nozzle, and supplying the first processing liquid to an intermediate region of the substrate supported and rotated on the substrate support chuck through the second nozzle, the intermediate region being a region farther from the center of the substrate than the central region; moving the third nozzle to a top side of the central region of the substrate; supplying the second processing liquid to the central region of the substrate through the third nozzle; and after the third nozzle starts supplying the second processing liquid and after a set time, moving the second nozzle in a direction away from the center of the substrate, wherein the second nozzle continues to supply the first processing liquid while moving.

[0027] According to the exemplary embodiment, the set time may be set to a time immediately before the second processing liquid supplied to the central region meets the first processing liquid supplied to the intermediate region, or a time within a threshold time after the first processing liquid and the second processing liquid meet.

[0028] According to the exemplary embodiment, the threshold time may be a time period not exceeding 2 seconds after the second processing liquid supplied to a first position meets the first processing liquid supplied to a second position.

[0029] According to the exemplary embodiment, when viewed from above, the second nozzle may move along a virtual arc through the center of the substrate W.

[0030] According to the exemplary embodiment of the present invention, the substrate can be effectively processed.

[0031] Furthermore, according to the exemplary embodiment of the present invention, the substrate can be effectively cleaned.

[0032] Furthermore, according to the exemplary embodiment of the present invention, the rinsing liquid supplied to the substrate can be effectively replaced with an organic solvent to form a uniform organic solvent liquid film on the substrate.

[0033] Furthermore, according to the exemplary embodiment of the present invention, an organic solvent liquid film can be uniformly formed on the substrate, thereby improving the drying efficiency of the substrate by supercritical fluid.

[0034] The effects of the present invention are not limited to the above effects, and those skilled in the art will clearly understand the effects not mentioned from the specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a top plan view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0036] Figure 2 is schematically showing according to an exemplary embodiment Figure 1 of a liquid processing chamber.

[0037] Figure 3 is schematically showing according to an exemplary embodiment Figure 1 of a drying chamber.

[0038] Figure 4 is a flowchart schematically showing a substrate processing method according to an exemplary embodiment of the present invention.

[0039] Figure 5 shows the execution of Figure 4 a first liquid processing operation of a liquid processing chamber.

[0040] Figure 6 and Figure 7 shows the execution of Figure 4 a second liquid processing operation of a liquid processing chamber in a schematic view of a diagram.

[0041] Figure 8 and Figure 9 shows during the second liquid processing operation of Figure 4 the flow of the processing liquid supplied to the substrate W, and a schematic view of the time of movement of the second nozzle.

[0042] Figure 10 is a top view of a substrate to be processed when viewed from above.

[0043] Figure 11 shows the execution of Figure 4 a third liquid processing operation of a liquid processing chamber in a schematic view of a diagram.

[0044] Figure 12 shows the execution of Figure 4 a drying operation of a drying chamber in a schematic view of a diagram.

[0045] Figure 13 is a schematic view of a diagram showing a liquid processing chamber for performing a substrate processing method according to another exemplary embodiment of the present invention.

[0046] Figure 14It is a schematic diagram of a liquid processing chamber showing another exemplary embodiment according to the present invention, and a liquid processing chamber performing a substrate processing method according to another exemplary embodiment.

[0047] Figure 15 It is a schematic diagram of a liquid processing chamber performing a substrate processing method according to another exemplary embodiment of the present invention.

[0048] After being described in detail in conjunction with the accompanying drawings, various features and advantages of the non-limiting exemplary embodiments of this specification can be made clearer. The accompanying drawings are for reference only and should not be construed as limiting the scope of the claims. Unless explicitly stated, the drawings should not be regarded as being drawn to scale. For clarity, various dimensions in the figures may be exaggerated. Detailed Description

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. The example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details (such as examples of specific components, devices, and methods) are set forth to provide a thorough understanding of the embodiments of this disclosure. It will be apparent to those skilled in the art that the example embodiments may be embodied in many different forms and that specific details should not be construed as limiting the scope of this disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail.

[0050] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" may be intended to include the plural forms. The terms "comprises", "comprising", "including", and "having" are inclusive and thus specify the presence of the stated feature, integer, step, operation, element, and / or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. Unless explicitly identified as being in a particular order of execution, the method steps, processes, and operations described herein should not be construed as necessarily being performed in the particular order discussed or illustrated. It should also be understood that additional or alternative steps may be employed.

[0051] When an element or layer is referred to as being “on,” “engaged to,” “connected to,” or “coupled to” another element or layer, it can be directly on, engaged directly to, connected directly to, or coupled directly to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly engaged to,” “directly connected to,” or “directly coupled to” another element or layer, there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted in a like manner (e.g., “between” relative to “directly between,” “adjacent” relative to “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0052] Although the terms “first,” “second,” “third,” etc. may be used herein to describe different elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections are not to be limited by these terms unless otherwise specified. These terms may be used only to distinguish one element, component, region, layer, and / or section from another. When used herein, terms such as “first,” “second,” and other numerical terms do not imply a sequence or order unless the context clearly dictates otherwise. Thus, a first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section without departing from the teachings of the example embodiments.

[0053] For ease of description, spatial relative terms (such as “inner,” “outer,” “beneath,” “below,” “lower,” “above,” and “upper,” etc.) may be used herein to describe the relationship of one element or feature to another (other) element or feature shown in the figures. Spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatial relative descriptors used herein are to be interpreted accordingly.

[0054] When the terms "like" or "the same" are used in the description of the exemplary embodiments, it should be understood that there may be some imprecision. Thus, when an element or value is said to be the same as another element or value, it should be understood that the element or value is the same as other elements or values within the manufacturing or operating tolerances (e.g., ±10%) of the other elements or values.

[0055] When the terms "about" or "substantially" are used in conjunction with a numerical value, it should be understood that the associated numerical value includes the manufacturing or operating tolerances around the stated numerical value (e.g., ±10%). Further, when the words "generally" and "substantially" are used in connection with a geometry, it should be understood that exactness of the geometry is not required, but the latitude of the shape is within the scope of the present disclosure.

[0056] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should be further understood that terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0057] Hereinafter, the present invention will be described based on the fact that the substrate W to be processed is a wafer. Further, hereinafter, the present invention will be described based on the fact that a pattern PA is formed on the substrate W to be processed. Further, the present invention will be described based on the fact that the substrate processing method is a manufacturing method of a semiconductor device.

[0058] Figure 1 is a top plan view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0059] Referring to Figure 1 , the substrate processing apparatus includes an index module 10, a processing module 20, and a controller 30. When viewed from above, the index module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is referred to as a first direction X, and when viewed from above, the direction perpendicular to the first direction X is referred to as a second direction Y, and the direction perpendicular to both the first direction X and the second direction Y is referred to as a third direction Z.

[0060] The indexing module 10 transfers the substrate W from the container C that houses the substrate W therein to the processing module 20, and houses the substrate that has been processed in the processing module 20 into the container C. The longitudinal direction of the indexing module 10 is set along the second direction Y. The indexing module 10 includes a loading port 12 and an indexing frame 14. Based on the indexing frame 14, the loading port 12 is located at the opposite side of the processing module 20. The container C in which the substrate W is housed is placed in the loading port 12. A plurality of loading ports 12 may be provided, and the plurality of loading ports 12 may be placed along the second direction Y.

[0061] A sealed container (such as a Front Open Unified Pod (FOUP)) may be used as the container C. The container C may be placed on the loading port 12 by a transfer device (not shown) such as an overhead conveyor, an overhead conveyor, or an automated guided vehicle, or by an operator.

[0062] The indexing manipulator 120 is provided to the indexing frame 14. A guide rail 124 whose longitudinal direction is set in the second direction Y is provided in the indexing frame 14, and the indexing manipulator 120 may be provided to be movable on the guide rail 124. The indexing manipulator 120 includes a hand 122 on which the substrate W is placed, and the hand 122 may be provided to be movable in the forward and backward directions, rotatable around the third direction Z, and movable along the third direction Z. A plurality of hands 122 may be provided at intervals in the vertical direction, and the hands 122 may move forward and backward independently of each other.

[0063] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides a space in which the substrate W loaded into the processing module 20 and the substrate W unloaded from the processing module 20 stay temporarily. The liquid processing chamber 400 performs a liquid processing process of processing the substrate W with a liquid by supplying the liquid to the substrate W. The drying chamber 500 performs a drying process of removing the residual liquid on the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0064] The buffer unit 200 includes a plurality of buffer areas 220 on which the substrate W is placed. The buffer areas 220 may be provided to be spaced apart from each other along the third direction Z. The buffer area 220 may be a substrate holder that supports the bottom surface of the substrate W. The buffer area 220 may be provided in the form of a support frame that supports the bottom surface of the substrate W.

[0065] The front and back of the buffer unit 200 are open. The front is the face facing the indexing module 10, and the back is the face facing the transfer chamber 300. The indexing robot 120 can approach the buffer unit 200 through the front, and the transfer robot 320 can approach the buffer unit 200 through the back.

[0066] The longitudinal direction of the transfer chamber 300 can be set in the first direction X. The buffer unit 200 can be set between the indexing module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be set on the side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 can be arranged along the second direction Y. The buffer unit 200 can be located at one end of the transfer chamber 300.

[0067] According to the example, the liquid processing chambers 400 are arranged on both sides of the transfer chamber 300, and the drying chambers 500 are arranged on both sides of the transfer chamber 300, and the liquid processing chambers 400 can be arranged closer to the buffer unit 200 than the drying chambers 500. On one side of the transfer chamber 300, the liquid processing chambers 400 can be arranged in an arrangement of A×B (each of A and B is a natural number of 1 or greater than 1) in the first direction X and the third direction Z. Further, on one side of the transfer chamber 300, the drying chambers 500 can be arranged in a quantity of C×D (each of C and D is a natural number of 1 or greater than 1) in the first direction 92 and the third direction 96. Different from the above, only the liquid processing chambers 400 can be arranged on one side of the transfer chamber 300, and only the drying chambers 500 can be arranged on the other side of the transfer chamber 300.

[0068] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 with its longitudinal direction set in the first direction X can be arranged in the transfer chamber 300, and the transfer robot 320 can be arranged to be movable on the guide rail 324. The transfer robot 320 includes a hand 322 on which the substrate W is placed, and the hand 322 can be arranged to be movable in the forward and backward directions, rotatable around the third direction Z, and movable along the third direction Z. A plurality of hands 322 can be arranged to be spaced apart in the vertical direction, and the plurality of hands 322 can move forward and backward independently of each other.

[0069] The controller 30 can control a substrate processing apparatus. The controller 30 can include: a process controller formed of a microprocessor (computer) that executes control of the substrate processing apparatus; a user interface formed of a keyboard in which an operator performs command input operations and the like to manage the substrate processing apparatus; a display for visualizing and displaying the operating status of the substrate processing apparatus; and a storage unit that stores a control program for executing a process performed in the substrate processing apparatus under the control of the process controller, or stores a program (i.e., a processing recipe) for executing a process in each component according to various data and processing conditions. Further, the user interface and the storage unit can be connected to the process controller. The processing recipe can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or a DVD), or a semiconductor memory (such as a flash memory).

[0070] The controller 30 can control the configuration of the substrate processing apparatus to perform the substrate processing method described below. For example, the controller 30 can generate control instructions to control the transfer chamber 300, the liquid processing chamber 400, and the drying chamber 500.

[0071] Figure 2 is a schematic diagram showing the Figure 1 liquid processing chamber according to an exemplary embodiment.

[0072] Referring to Figure 2 , the liquid processing chamber 400 according to an exemplary embodiment of the present invention can process the substrate W by supplying a processing liquid to the substrate W. The processing liquid supplied to the substrate W can be a cleaning solution for cleaning the substrate W. The cleaning solution can be deionized water or an organic solvent. The organic solvent can be a solvent containing alcohol. The organic solvent can be isopropyl alcohol (IPA).

[0073] The liquid processing chamber 400 can include a housing 410, a support unit 420, a bowl 430, a lifting unit 440, a first nozzle 450, a second liquid supply unit 460, a third liquid supply unit 470, a first nozzle waiting cup 481, a second nozzle waiting cup 482, and a downflow unit 490.

[0074] The housing 410 can provide a space for processing the substrate W therein and a space for arranging some configurations of the liquid processing chamber 400. The housing 410 can provide an upper space 411 and a lower space 412. The upper space is a processing space for processing the substrate W therein, and the lower space is located below the upper space 411. The upper space 411 and the lower space 412 can be separated by a compartment plate 413 provided in the housing 410. When viewed from above, the compartment plate 413 can be a plate having an open central region.

[0075] On one side of the housing 410, an entrance opening 414 for introducing the substrate W into the upper space 411 and for removing the substrate W from the upper space 411 can be formed. The entrance opening 414 can be selectively opened and closed by a door DO (which can be a shutter). The door DO can be configured to be movable in the vertical direction. For example, the door DO can be configured to move in the vertical direction by a motor, a cylinder / hydraulic cylinder, etc.

[0076] The support unit 420 can be configured to support and rotate the substrate W in the space provided by the housing 410. The support unit 420 can include a rotating plate 421, a rotating shaft 424, and a rotation driver 425. The support unit 420 can be a substrate support chuck configured to support a substrate and rotate the supported substrate.

[0077] When viewed from above, the rotating plate 421 can have the shape of a substantially circular plate. The rotating plate 421 can have a shape with a wide top surface and a narrow bottom surface. Chuck pins 422 and support pins 423 can be installed in the rotating plate 421. A plurality of chuck pins 422 can be provided. The rotation axis C of the rotating plate 421 can be aligned with the center of the substrate W.

[0078] The chuck pins 422 can be configured to support the bottom surface and the side portions of the edge of the substrate W. When viewed from above, the chuck pins 422 can be configured to be movable in a direction close to the center of the rotating plate 421 or in a direction away from the center of the rotating plate 421. The chuck pins 422 can be configured to move in a direction close to the center of the rotating plate 421 or in a direction away from the center of the rotating plate 421 by a driving mechanism (such as a motor or a cylinder) provided in the rotating plate 421. When the chuck pins 422 move in a direction close to the center of the rotating plate 421 and are positioned in the clamping position, the substrate W can be clamped onto the rotating plate 421. Conversely, when the chuck pins 422 move in a direction away from the center of the rotating plate 421 and are positioned in the de-chucking position, the substrate W can be de-chucked from the rotating plate 421.

[0079] The support pins 423 can be configured to support the bottom surface of the substrate W. A plurality of support pins 423 can be provided and configured to support different points on the bottom surface of the substrate W, respectively. When viewed from above, the support pins 423 can be arranged at circumferentially spaced intervals from each other.

[0080] The lower portion of the rotating plate 421 can be coupled to the rotating shaft 424. The rotating shaft 424 can be rotated clockwise or counterclockwise by receiving a driving force from a rotation driver 425, and the rotation driver can be a hollow motor.

[0081] The bowl-shaped member 430 can provide a space in which the substrate W is processed. The bowl-shaped member 430 can have a cup-shaped shape with an open top. The bowl-shaped member 430 can be used as a liquid receiving portion to collect the processing liquid dispersed from the substrate W when a liquid supply unit 450 described later supplies the processing liquid to the rotating substrate W.

[0082] The bowl-shaped member 430 includes an outer bowl-shaped member 431 and an inner bowl-shaped member 432. The outer bowl-shaped member 431 and the inner bowl-shaped member 432 can include a bottom, sides extending upward from the bottom, and a top extending obliquely from the sides in a direction approaching the rotating plate 421. The sides can be coupled to a lifting unit 440 described later. The inner bowl-shaped member 432 can be a bowl-shaped member provided inside the outer bowl-shaped member 431. The inner bowl-shaped member 432 can be connected to an exhaust pipe EP that can exhaust the downflowing material DF supplied to the upper space 411 as a processing space. The exhaust pipe EP can be connected to a first decompression device EA1 via a bowl-shaped member exhaust pipeline BEL, and the first decompression device can be a pump.

[0083] The first decompression device EA1 can be configured to always discharge the atmosphere of the space (e.g., the upper space 411) provided by the housing 410 at a preset discharge flow rate per unit time.

[0084] The processing liquid can be collected between the outer bowl-shaped member 431 and the inner bowl-shaped member 432. The collected processing liquid can be discharged to the outside of the liquid processing chamber 400 via a drain line DL connected to the bottom of the outer bowl-shaped member 431.

[0085] Additionally, the downflowing material DF supplied by a downflowing material unit 490 described later can be discharged through the space between the outer bowl-shaped member 431 and the inner bowl-shaped member 432. The downflowing material DF can be discharged to the outside of the liquid processing chamber 400 through the space between the outer bowl-shaped member 431 and the inner bowl-shaped member 432 and via the exhaust pipe EP and the bowl-shaped member exhaust pipeline BEL.

[0086] The lifting unit 440 can be configured to change the relative height between the bowl-shaped member 430 and the rotating plate 421. The lifting unit 440 can be configured to move the bowl-shaped member 430 in the vertical direction, thereby changing the relative height between the bowl-shaped member 430 and the rotating plate 421. The lifting unit 440 includes a fixed bracket 441, a lifting shaft 442, and a lifting driver 443. The lifting driver 443 can be a motor or a cylinder / hydraulic cylinder that can move the fixed bracket 441 connected to the lifting shaft 442 in the vertical direction. The fixed bracket 441 is coupled to the side of the outer bowl-shaped member 431 and can move both the outer bowl-shaped member 431 and the inner bowl-shaped member 432 in the vertical direction.

[0087] The first nozzle 450, the second liquid supply unit 460, and the third liquid supply unit 470 are supported on the support unit 420 and can supply a processing liquid to the rotating substrate W to process the liquid processing substrate W. The first nozzle 450, the second liquid supply unit 460, and the third liquid supply unit 470 can be collectively referred to as the liquid supply unit. The liquid supply unit can be configured to process the substrate W by supplying a rinse liquid for cleaning the supported substrate W and an organic solvent for cleaning the substrate W and replacing it with the rinse liquid.

[0088] The first nozzle 450 can be mounted on the bowl-shaped member 430. The first nozzle 450 can be mounted on the bowl-shaped member 430 to supply the first processing liquid to the central region (an example of the first position) of the substrate W supported on the support unit 420. The first processing liquid supplied through the first nozzle 450 can be deionized water (DI water, DIW).

[0089] In an exemplary embodiment, the present invention has been described based on the case where the first nozzle 450 is mounted on the bowl-shaped member 430 and has a fixed position, but the present invention is not limited thereto. For example, the first nozzle 450 can be fixedly mounted in a configuration other than the bowl-shaped member 430, or can be configured to have a variable position (such as the second nozzle 461 or the third nozzle 471 described later).

[0090] The second liquid supply unit 460 may include a second nozzle 461, a second arm 462, a second moving shaft 463, and a second moving driver 464. The second moving driver 464 may cause the second moving shaft 463 to rotate about an axis perpendicular to the ground. One end of the second arm 462 is connected to one end of the second moving shaft 463, such that the position of the other end of the second arm 462 can be changed by the rotation of the second moving shaft 463. The second nozzle 461 may be mounted on the other end of the second arm 462. Thus, the second nozzle 461 may perform an inward scan (move closer to the center of the substrate W) or an outward scan (move away from the center of the substrate W). When viewed from above, the second nozzle 461 may move along an imaginary arc passing through the center of the substrate W.

[0091] The second nozzle 461 may supply a first processing liquid to an intermediate region (an example of the second position) of the substrate W supported on the support unit 420. The first processing liquid supplied through the second nozzle 461 may be deionized water (DI water, DIW).

[0092] However, as needed, the second nozzle 461 may also supply the first processing liquid to the central region of the substrate W, or the edge region of the substrate W (an example of the third position).

[0093] The third liquid supply unit 470 may include a third nozzle 471, a third arm 472, a third moving shaft 473, and a third moving driver 474. The third liquid supply unit 470 may be positioned on the opposite side of the second liquid supply unit 460 with respect to the support unit 420.

[0094] The third moving driver 474 may cause the third moving shaft 473 to rotate about an axis perpendicular to the ground. One end of the third arm 472 may be connected to one end of the third moving shaft 473, such that the position of the other end of the third arm 472 can be changed by the rotation of the third moving shaft 473. The third nozzle 471 may be mounted at the other end of the third arm 472. Thus, the third nozzle 471 may perform an inward scan (move closer to the center of the substrate W) or an outward scan (move away from the center of the substrate W). When viewed from above, the third nozzle 471 may move along an imaginary arc passing through the center of the substrate W.

[0095] The third nozzle 471 may supply a second processing liquid to an intermediate region (an example of the second position) of the substrate W supported on the support unit 420. The second processing liquid supplied through the third nozzle 471 may be an organic solvent containing alcohol. For example, the second processing liquid may be isopropyl alcohol (IPA).

[0096] However, if necessary, the third nozzle 471 can also supply the second processing liquid to the central region or the edge region of the substrate W.

[0097] Additionally, the liquid processing chamber 400 can have a first nozzle waiting cup member 481 and a second nozzle waiting cup member 482. The first nozzle waiting cup member 481 provides a first waiting space 481a, and when the second nozzle 461 is not processing the substrate W, the first waiting space 481a can provide a waiting space for the second nozzle 461. Similar to the first nozzle waiting cup member 481, the second nozzle waiting cup member 482 provides a second waiting space 482b, and when the third nozzle 471 is not processing the substrate W, the second waiting space 482b can provide a waiting space for the third nozzle 471.

[0098] The first nozzle waiting cup member 481 and the second nozzle waiting cup member 482 can be respectively connected to a first cup member discharge pipeline CER1 and a second cup member discharge pipeline CER2, and the first cup member discharge pipeline CER1 and the second cup member discharge pipeline CER2 can be connected to a first cup member decompression device EA2-1 and a second cup member decompression device EA2-2 to discharge the first waiting space 481a and the second waiting space 482a. The first cup member decompression device and the second cup member decompression device can be pumps. By discharging the first waiting space 481a and the second waiting space 482a, droplets of the processing liquid deposited at the ends of the second nozzle 461 and the third nozzle 471 can be recovered.

[0099] The downflow fluid unit 490 can be installed on the upper part of the housing 410. The downflow fluid unit 490 can supply a downflow fluid DF to the space provided by the housing 410 (such as the upper space 411 serving as a processing space). The downflow fluid unit 490 can be a component formed by a fan configured to be rotatable, a filter provided on the lower side of the fan, and a frame for mounting the fan and the filter. The downflow fluid unit 490 can be connected to an air supply pipeline AL, and the air supply pipeline is connected to an air supply source AS. The air supply source AS can supply clean dry air (CDA) with controlled temperature and humidity to the downflow fluid unit 490 via the air supply pipeline AL.

[0100] Figure 3 is a schematic diagram schematically showing Figure 1 the drying chamber according to an exemplary embodiment.

[0101] The drying chamber 500 can supply a supercritical fluid (SCF) to the substrate W that has undergone liquid processing in the liquid processing chamber 400 to perform a drying process on the substrate W. In one exemplary embodiment, the drying chamber 500 removes the liquid on the substrate W by using a supercritical fluid SCF (which can be carbon dioxide in a supercritical state). The drying chamber 500 includes a body 520, a support 540, a fluid supply unit 560, and a baffle 580.

[0102] The body 520 provides an internal space 502 in which the drying process is performed. The body 520 includes an upper body 522 and a lower body 524, and the upper body 522 and the lower body 524 are combined with each other to provide the above-mentioned internal space 502. The upper body 522 is provided above the lower body 524. The position of the upper body 522 is fixed, and the lower body 524 can be raised and lowered by a driving member 590 (such as a cylinder). When the lower body 524 is separated from the upper body 522, the internal space 502 is opened, and in this case, the substrate W is loaded or unloaded. During the process, the lower body 524 is in close contact with the upper body 522 so as to seal the internal space 502 from the outside.

[0103] The drying chamber 500 includes a heater 570. According to one example, the heater 570 is located within the wall of the body 520. The heater 570 heats the internal space 502 of the body 520 so that the supercritical fluid SCF supplied into the internal space of the body 520 is maintained in a supercritical state.

[0104] The support 540 supports the substrate W in the internal space 502 of the body 520. The support 540 includes a fixing rod 542 and a cradle 544.

[0105] The fixing rod 542 is fixedly mounted on the upper body 522 so as to protrude downward from the bottom surface of the upper body 522. The fixing rod 542 is arranged such that its longitudinal direction is the vertical direction. A plurality of fixing rods 542 are provided and are positioned spaced apart from each other. The fixing rod 542 is arranged such that when the substrate W is loaded into or unloaded from the space surrounded by the fixing rods through the fixing rods 542, the substrate W does not interfere with the fixing rods 542. The cradle 544 is coupled to each of the fixing rods 542.

[0106] The cradle 544 extends from the lower end of the fixing rod 542 toward the space surrounded by the fixing rods 542. Due to the above structure, the substrate W loaded into the internal space 502 of the body 520 has an edge region placed on the cradle 544, and the entire upper surface region of the substrate W, the central region of the bottom surface region of the substrate W, and a part of the edge region of the bottom surface of the substrate W are exposed to the supercritical fluid SCF supplied to the internal space 502.

[0107] The fluid supply unit 560 supplies a supercritical fluid SCF to the internal space 502 of the main body 520. In one example, the supercritical fluid SCF can be supplied to the internal space 502 in a supercritical state. Alternatively, the supercritical fluid SCF can be supplied to the internal space 502 in a gaseous state and phase-changed to a supercritical state within the internal space 502. According to the example, the fluid supply unit 560 includes a main supply line 562, an upper branch line 564, and a lower branch line 566.

[0108] The upper branch line 564 and the lower branch line 566 branch from the main supply line 562. The upper branch line 564 is coupled to the upper main body 522 to supply the supercritical fluid SCF from the top of the substrate W placed on the support 540. According to the example, the upper branch line 564 is coupled to the center of the upper main body 522.

[0109] The lower branch line 566 is coupled to the lower main body 524 to supply the supercritical fluid from the lower part of the substrate W placed on the support main body 540. According to the example, the lower branch line 566 is coupled to the center of the lower main body 524. The discharge line 550 is coupled to the lower main body 524. The supercritical fluid in the internal space 502 of the main body 520 is discharged to the outside of the main body 520 through the discharge line 550.

[0110] The baffle 580 can be disposed in the internal space 502 of the main body 520. The baffle 580 can be disposed in a disk shape. The baffle 580 is supported by the support 582 so as to be spaced upward from the bottom surface of the main body 520. The support 582 is disposed in a rod shape, and a plurality of supports 582 are arranged at a predetermined distance from each other. When viewed from above, the baffle 580 can be disposed to overlap the outlet of the lower branch line 566 and the inlet of the discharge line 550. The baffle 580 can prevent the supercritical fluid SCF supplied through the lower branch line 566 from being directly discharged toward the substrate W and damaging the substrate W.

[0111] Hereinafter, a substrate processing method according to an exemplary embodiment of the present invention will be described in detail. The substrate processing method described herein can be a manufacturing method corresponding to some of the various processes required to process a substrate (such as a wafer) to manufacture a semiconductor device.

[0112] In addition, the controller 30 can control the configuration of the substrate processing apparatus so that the substrate processing apparatus can execute the substrate processing method described herein. For example, the controller 30 can generate a control signal to control the index module 10 and the processing module 20, and control various configurations included in the index module 10 and the processing module 20.

[0113] Figure 4is a flowchart schematically showing a substrate processing method according to an exemplary embodiment of the present invention.

[0114] Referring Figure 4 , the substrate processing method according to an exemplary embodiment of the present invention may include a liquid processing operation S10 and a drying processing operation S20.

[0115] The liquid processing operation S10 is performed in a liquid processing chamber 400. The drying operation S2 can be performed in a drying chamber 500. The liquid processing operation S10 can be performed by supplying a processing liquid to the substrate W in the liquid processing chamber 400. The drying operation S20 can be performed by drying the substrate W by supplying a supercritical fluid SCF to the substrate W in the drying chamber 500.

[0116] The liquid processing operation S10 may include a first liquid processing operation S11, a second liquid processing operation S12, and a third liquid processing operation S13. The first liquid processing operation S11, the second liquid processing operation S12, and the third liquid processing operation S13 may be performed in sequence.

[0117] Figure 5 is a schematic view of a liquid processing chamber performing Figure 4 the first liquid processing operation.

[0118] Referring Figure 4 and Figure 5 , the first liquid processing operation S11 may be an operation of supplying a first processing liquid DIW to a central region and an intermediate region of the substrate W while the substrate is rotating while being supported on a support unit 420. The first processing liquid DIW may clean the substrate W. In the first liquid processing operation S11, a first nozzle 450 may supply the first processing liquid DIW to the central region of the substrate W, and a second nozzle 461 may also supply the first processing liquid DIW to the intermediate region of the substrate W. When the first processing liquid DIW is supplied to the substrate W, the first processing liquid DIW diffuses by the rotation of the substrate W. In this case, when the first processing liquid DIW is only supplied to the central region of the substrate W, the first processing liquid DIW may not uniformly diffuse to the intermediate region and the edge region of the substrate W. When the first processing liquid DIW does not diffuse uniformly, a part of the substrate W may be exposed to air. In this case, the pattern formed on the substrate W in the region exposed to air may be damaged.

[0119] Therefore, in the first liquid processing operation S11 of the present invention, the first processing liquid DIW is supplied to the central region and the intermediate region of the rotating substrate W respectively, so that the first processing liquid DIW can uniformly and densely spread over the entire region of the substrate W.

[0120] Figure 6 and Figure 7 is a schematic diagram of a liquid processing chamber showing a second liquid processing operation being performed Figure 4 on the substrate W.

[0121] Referring to Figure 4 、 Figure 6 and Figure 7 , the second liquid processing operation S12 may include supplying a second processing liquid IPA to the central region of the substrate W and supplying a first processing liquid DIW to the intermediate region and / or the edge region. That is, the supply of the second processing liquid IPA to the central region of the substrate W and the supply of the first processing liquid DIW to the intermediate region and / or the edge region of the substrate W may be performed simultaneously.

[0122] In the second liquid processing operation S12, the third nozzle 471 may move to the upper side of the central region of the substrate W, and at the same time, the supply of the first processing liquid DIW may be stopped (see Figure 6 ), and at the same time, the third nozzle 471 may start supplying the second processing liquid IPA (see Figure 7 ).

[0123] Alternatively, the third nozzle 471 may move to the upper side of the central region of the substrate W, and after a certain period of time, the third nozzle 471 may stop supplying the first processing liquid DIW from the first nozzle 450 while supplying the second processing liquid IPA.

[0124] In short, the start of supplying the second processing liquid IPA from the third nozzle 471 and the stop of supplying the first processing liquid DIW from the first nozzle 450 may be performed simultaneously. Optionally, the stop of the supply from the first nozzle 450 may be at a set time later (within about 1 second) than the start of supplying the second processing liquid IPA. This is because when the supply of the first processing liquid DIW to the central region of the substrate W is stopped, the first processing liquid DIW previously supplied to the central region of the substrate W may be scattered and flow towards the edge region of the substrate W, in which case the central region of the substrate W may be exposed to air.

[0125] Therefore, in the present invention, the time during which the central region of the substrate W may be exposed to air can be minimized, thereby minimizing the damage to the pattern formed on the central region of the substrate W due to natural drying.

[0126] Figure 8 and Figure 9 are schematic diagrams showing the flow of the processing liquid supplied to the substrate W and the movement time of the second nozzle during the second liquid processing operation in Figure 4 .

[0127] On the other hand, when the third nozzle 471 supplies the second processing liquid IPA to the central region of the substrate W and the second nozzle 461 supplies the first processing liquid DIW to the intermediate region of the substrate W, the second processing liquid IPA can form a fringe film, while the first processing liquid DIW can form a bulk film. In addition, the fringe film formed by the second processing liquid IPA can diffuse in the circumferential direction of the substrate W and contact the bulk film formed by the first processing liquid DIW.

[0128] In this case, when the second nozzle 461 continuously supplies the first processing liquid DIW at a fixed position (i.e., without changing the discharge position), a liquid pushing phenomenon may occur due to the Marangoni effect at the meeting point (point A) of the first processing liquid DIW and the second processing liquid IPA. The liquid pushing phenomenon may be a phenomenon in which the second processing liquid IPA flowing in the circumferential direction of the substrate W is pushed toward the center of the substrate W at a certain moment. The liquid pushing phenomenon may occur when the first processing liquid DIW and the second processing liquid IPA are different types of processing liquids, or more specifically, when the surface tensions of the two processing liquids are different. When the first processing liquid DIW is deionized water and the second processing liquid IPA is isopropyl alcohol, the surface tension of the first processing liquid DIW is greater than the surface tension of the second processing liquid IPA.

[0129] When the contact time between the first processing liquid DIW and the second processing liquid IPA is about 2 seconds or more, the liquid pushing phenomenon may occur to a greater extent. When the contact time is less than 2 seconds, the contact degree between the second processing liquid IPA and the first processing liquid DIW is relatively small, and the continuously supplied second processing liquid IPA will continue to expand to the outside of the substrate W and push the first processing liquid DIW away. On the other hand, when the contact time exceeds 2 seconds, the contact degree between the second processing liquid IPA and the first processing liquid DIW becomes larger, resulting in the above-mentioned liquid pushing phenomenon.

[0130] When this liquid pushing phenomenon occurs, the pattern of the substrate W is exposed to air at point A (the meeting point of the central region CR and the intermediate region MR of the substrate W, as Figure 10 shown), and the pattern formed at point A may be damaged (e.g., pattern tilting phenomenon). This problem becomes more important when the pattern becomes very fine and the pattern difficulty increases (the pattern difficulty increases from D1z to D1c+@).

[0131] Thus, in an exemplary embodiment of the present invention, a second processing liquid IPA and a first processing liquid DIW are supplied, and a second nozzle 461 for supplying the first processing liquid DIW scans outward as Figure 9 shown. In addition, the second nozzle 461 continues to supply the first processing liquid DIW during the outward scan. This can prevent the occurrence of the above-mentioned liquid pushing phenomenon.

[0132] As described above, when the contact time between the peripheral film and the main body film is 2 seconds or more, the liquid pushing phenomenon is more likely to occur. In addition, when the outward scan of the second nozzle 461 starts too fast, there is a risk that the patterns of the substrate W in the middle region MR and the edge region ER of the substrate W are exposed to air.

[0133] Therefore, in an exemplary embodiment of the present invention, after a set time has elapsed since the start of supplying the second processing liquid IPA from the third nozzle 471, the second nozzle 461 scans outward. The set time can be set based on the time it takes for the second processing liquid IPA to reach the first processing liquid DIW (for example, the time required for the second processing liquid IPA to first contact the first processing liquid DIW after the start of the supply of the second processing liquid IPA).

[0134] For example, the set time can be set to a time within 2 seconds after the start of supplying the second processing liquid IPA, just before the peripheral film contacts the main body film, or after the peripheral film contacts the main body film.

[0135] The set time can be obtained in advance by changing the rotation speed of the substrate W, the supply flow rate of the second processing liquid IPA per unit time, the temperature of the second processing liquid IPA, and by taking images using vision or the like. The set time can be calculated by processing a plurality of substrates W and calculating statistical values (such as the average value and the median value). The calculated set time can be stored by the controller 30.

[0136] In addition, as the rotation speed of the substrate W is higher, the set time can also be set shorter. This is because the diffusion rate of the second processing liquid IPA is high. Similarly, the higher the supply flow rate of the second processing liquid IPA supplied to the substrate W per unit time, the shorter the set time can be set. Similarly, in this case, this is because the diffusion rate of the second processing liquid IPA is fast.

[0137] In addition, it is not desirable for the second nozzle 461 to move long before the peripheral film and the main body film meet. In this case, the patterns in the middle region MR and the edge region ER of the substrate W may be exposed to air. Therefore, the second nozzle 461 preferably scans outward just before the peripheral film meets the main body film, or within a threshold time (2 seconds) after the peripheral film meets the main body film.

[0138] In addition, the moving speed of the second nozzle 461 is preferably equal to or slower than the diffusion speed of the second processing liquid IPA. This is because when the moving speed of the second nozzle 461 is too fast, it will also cause the patterns in some areas of the substrate W to be similarly exposed to air. Most preferably, the moving speed of the second nozzle 461 is the same as the diffusion speed of the second processing liquid IPA. Otherwise, the speed of the second nozzle 461 can be set to a slower speed within the range that does not cause the liquid pushing phenomenon.

[0139] Figure 11 is a schematic diagram of a liquid processing chamber that performs Figure 4 the third liquid processing operation.

[0140] Referring to Figure 4 and Figure 11 , in the third liquid processing operation S30, the second nozzle 461 can move to the outside of the substrate W and stop supplying the first processing liquid DIW. In addition, the third nozzle 471 can continue to supply the second processing liquid IPA. This allows the first processing liquid DIW on the substrate W to be replaced by the second processing liquid IPA, and a liquid film is formed on the substrate W by the second processing liquid IPA. Since the second processing liquid IPA has a relatively smaller surface tension than the first processing liquid DIW, the second processing liquid IPA easily penetrates between the fine patterns formed on the substrate W. In addition, since the second processing liquid IPA has a high solubility in supercritical carbon dioxide, the second processing liquid IPA helps to perform the following drying operation S20 more appropriately.

[0141] Figure 12 is a schematic diagram of a drying chamber that performs Figure 4 the drying operation.

[0142] Referring to Figure 4 and Figure 12 , the drying chamber 500 can dry the substrate W by supplying a supercritical fluid SCF to the substrate W. The substrate W loaded into the drying chamber 500 can be loaded with a liquid film formed on the top surface (the patterned surface on which the patterns are formed) of the substrate W by the above-mentioned second processing liquid IPA.

[0143] As described above, in the substrate processing method according to an exemplary embodiment of the present invention, the second liquid treatment operation S12 includes supplying a second treatment liquid IPA to the central region of the substrate W, and simultaneously supplying a first treatment liquid DIW to the intermediate region or the edge region of the substrate, and starting an outward scan of the second nozzle 461, which supplies the first treatment liquid DIW just before the second treatment liquid IPA contacts the first treatment liquid DIW or within a threshold time after the second treatment liquid IPA contacts the first treatment liquid DIW. The second nozzle 461 continues to supply DIW during the outward scan.

[0144] Therefore, the time during which the pattern formed on the substrate W by the above-described Marangoni effect is exposed to air can be minimized, and in addition, the first treatment liquid DIW supplied to the substrate W can be replaced by the second treatment liquid IPA while maintaining the wetting state of the substrate W.

[0145] Figure 13 FIG. is a schematic view showing a liquid treatment chamber for performing a substrate processing method according to another exemplary embodiment of the present invention.

[0146] Referring to Figure 13 , the aforementioned liquid pushing phenomenon is caused by the surface tension difference between the first treatment liquid DIW and the second treatment liquid IPA, and the greater the surface tension difference, the easier and to a greater extent the liquid pushing phenomenon occurs. To mitigate this problem, the second treatment liquid IPA supplied to the central region of the substrate W can be cooled and supplied as a low-temperature second treatment liquid CIPA, and the first treatment liquid DIW supplied to the intermediate region of the substrate W can be heated and supplied as a high-temperature first treatment liquid DIW. Since the surface tension tends to be inversely proportional to the temperature of the liquid, the difference caused by the surface tension can be minimized by reducing the surface tension of the liquid supplied to the intermediate region of the substrate W and increasing the surface tension of the liquid supplied to the central region of the substrate W.

[0147] Furthermore, the supply of the low-temperature cooled second treatment liquid CIPA and the high-temperature first treatment liquid DIW can occur only after the previously described third nozzle 471 starts supplying liquid and after a set time has elapsed. Subsequently, the third nozzle 471 can supply the second treatment liquid IPA at the original temperature, and the second nozzle 461 can supply the first treatment liquid DIW at the original temperature.

[0148] In addition, the second liquid supply unit 460 can include a chiller and the third liquid supply unit 470 can include a heater to supply the low-temperature second treatment liquid CIPA and the high-temperature first treatment liquid DIW.

[0149] Figure 14It is a schematic diagram of a liquid processing chamber showing another exemplary embodiment of the present invention and a liquid processing chamber for performing a substrate processing method according to another exemplary embodiment.

[0150] Above, the present invention has been described by taking as an example the case of reducing the change in surface tension by lowering the temperature of the liquid, but the present invention is not limited thereto. For example, the support unit 420 may further include a center heater 426 and an edge heater 427, wherein the heaters are configured to heat the substrate W. The edge heater 427 can transfer thermal energy H to the intermediate region and the edge region of the substrate W, thereby increasing the temperature of the first processing liquid DIW supplied to the substrate W, and thus reducing the surface tension of the first processing liquid DIW.

[0151] In addition, since heating of the first processing liquid DIW by the edge heater 427 takes time, heating of the first processing liquid DIW can be started in advance before the second processing liquid IPA is supplied.

[0152] In the above example, the present invention has been described by taking as an example the case where the second liquid processing operation S12 includes supplying the second processing liquid IPA to the center region of the substrate W and supplying the first processing liquid DIW to the intermediate region, but the present invention is not limited thereto. As Figure 15 shown, even if the first processing liquid DIW having a high surface tension is supplied to the center region of the substrate W and the second processing liquid IPA having a low surface tension is supplied to the intermediate region, the above-described prevention of liquid pushing phenomenon by outward scanning can be similarly applied. In other words, the prevention of liquid pushing phenomenon by outward scanning according to an exemplary embodiment of the present invention can be equally / similarly applied to various fields of liquid processing of the substrate W.

[0153] It should be understood that the exemplary embodiments disclosed herein and other variations are possible. Each element or feature of a particular exemplary embodiment is generally not limited to that particular exemplary embodiment, but is interchangeable and can be used in a selected exemplary embodiment where applicable even if not specifically stated or described. Such modifications should not be regarded as departing from the spirit and scope of the present invention, and all modifications that are obvious to those of ordinary skill in the art are intended to be included within the scope of the appended claims.

Claims

1. A method for processing a substrate, the method comprising: supplying a second processing liquid different from the first processing liquid to a first position of the substrate, the first position being closer to the center of the substrate than the second position, Here, when the first process liquid is continued to be supplied after a set time has passed from the time when the second process liquid was started to be supplied, the nozzle supplying the first process liquid moves.

2. The method according to claim 1, wherein: The nozzle moves in a direction away from the center of the substrate while continuing to supply the first process liquid.

3. The method according to claim 2, wherein: The first treatment liquid and the second treatment liquid are configured to have different surface tensions, and The set time is set based on a time for the second processing liquid supplied to the first position to reach the second position.

4. The method according to claim 3, wherein: The set time is set to a time immediately before the second treatment liquid supplied to the first position meets the first treatment liquid supplied to the second position, or a time within a threshold time after the first treatment liquid meets the second treatment liquid.

5. The method according to claim 4, wherein: The threshold time is a time period not exceeding 2 seconds after the second treatment liquid supplied to the first position meets the first treatment liquid supplied to the second position.

6. The method according to claim 1, wherein: As the rotation speed of the substrate increases, the setting time is set shorter.

7. The method according to claim 1, wherein: The set time is set shorter as the supply flow rate per unit time of the second processing liquid supplied to the substrate is larger.

8. The method according to claim 1, wherein: The second process liquid is an organic solvent, and The first process liquid is deionized water.

9. A manufacturing method, comprising: a liquid processing operation that supplies a processing liquid to the rotating substrate to process the substrate; as well as a drying operation of supplying a supercritical fluid to the substrate to process the substrate after the liquid processing operation, Wherein, the liquid handling operation includes: a first liquid processing operation of supplying a first processing liquid to a first position and a second position of the rotating substrate, the second position being farther from a center of the substrate than the first position; and a second liquid processing operation of supplying a second processing liquid having a surface tension different from that of the first processing liquid to the first position of the rotating substrate and supplying the first processing liquid to the second position of the rotating substrate, and The second liquid treatment operation includes moving a nozzle supplying the first treatment liquid in a direction away from a center of the substrate while supplying the first treatment liquid after a set time has elapsed after the supply of the second treatment liquid is started.

10. The manufacturing method according to claim 9, wherein: The set time is set based on a time for the second processing liquid supplied to the first position to reach the second position.

11. The manufacturing method according to claim 10, wherein: The set time is set to a time immediately before the second treatment liquid supplied to the first position meets the first treatment liquid supplied to the second position, or a time within a threshold time after the first treatment liquid meets the second treatment liquid.

12. The manufacturing method according to claim 11, wherein: The threshold time is a time within 2 seconds after the second treatment liquid supplied to the first position meets the first treatment liquid supplied to the second position.

13. The manufacturing method according to claim 9, wherein: A moving speed of the nozzle in the second liquid processing operation is equal to or lower than a spreading rate of the second processing liquid supplied to the first position in the second liquid processing operation.

14. The manufacturing method according to claim 9, wherein: The liquid processing operation further includes a third liquid processing operation of supplying the second processing liquid to the first position of the rotating substrate to form a liquid film after the second liquid processing operation.

15. The manufacturing method according to claim 9, wherein: The first process liquid has a greater surface tension than the second process liquid.

16. The substrate processing device according to claim 9, wherein: The first process liquid is deionized water, and The second processing liquid is isopropyl alcohol.

17. A control method for a substrate processing device, the substrate processing device comprising: A substrate supporting chuck, the substrate supporting chuck is used to support and rotate the substrate; a first nozzle for supplying a first processing liquid to a substrate supported on the substrate support chuck; a second nozzle for supplying the first processing liquid to a substrate supported on the substrate support chuck; and a third nozzle for supplying a second processing liquid different from the first processing liquid to the substrate supported on the substrate supporting chuck, the control method comprising: supplying the first processing liquid to a central region of the substrate supported and rotated on the substrate supporting chuck through the first nozzle, and supplying the first processing liquid to a middle region of the substrate supported and rotated on the substrate supporting chuck through the second nozzle, the middle region being a region farther from the center of the substrate than the central region; moving the third nozzle to a top side of the central area of ​​the substrate; supplying the second processing liquid to the central area of ​​the substrate through the third nozzle; and After the third nozzle starts supplying the second processing liquid and a set time has passed, the second nozzle is moved in a direction away from the center of the substrate, wherein the second nozzle continues to supply the first processing liquid while being moved.

18. The control method according to claim 17, wherein: The set time is set to a time immediately before the second treatment liquid supplied to the central area meets the first treatment liquid supplied to the middle area, or a time within a threshold time after the first treatment liquid meets the second treatment liquid.

19. The control method according to claim 18, wherein: The threshold time is a time within 2 seconds after the second processing liquid supplied to the first position meets the first processing liquid supplied to the second position, which is farther from the center of the substrate than the first position.

20. The control method according to claim 16, wherein: The second nozzle moves through the center of the substrate W along a virtual arc when viewed from above.

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