Composite circuit board structure and manufacturing method thereof
Through the composite circuit board structure and its manufacturing method, the accuracy and short circuit problems of ceramic circuit boards when forming metal circuits are solved, and the manufacturing of diverse and high-reliability circuit boards is achieved.
Patent Information
- Application Number
- CN202311744328.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-15
- Publication Date
- 2025-06-17
AI Technical Summary
Existing ceramic circuit boards are susceptible to lateral etching of chemical etching when forming metal lines, resulting in reduced accuracy and increased short circuit risk, while it is difficult to meet the requirements of different thickness lines.
The composite circuit board structure and its manufacturing method are adopted, including preparing a metalized ceramic substrate, patterning the metal layer to form a thick circuit layer, sputtering to form a conductor layer, shielding and electroplating to form an electroplating layer, and finally forming a thin circuit layer through chemical etching steps to ensure the accuracy and diversity of the circuit.
It effectively improves the accuracy and reliability of ceramic circuit boards, avoids short circuit problems caused by lateral etching, and can meet application needs of different thicknesses and layout requirements.
Smart Images
Figure CN120166638A_ABST
Abstract
Description
Technical Field
[0001] This application relates to a circuit board, and particularly to a composite circuit board structure and a manufacturing method thereof. Background Art
[0002] Most existing ceramic circuit boards must use chemical etching when forming metal circuits. However, the metal circuits are affected by the lateral etching of the chemical etching and it is difficult to maintain their accuracy and are prone to short circuits. Moreover, existing ceramic circuit boards also face the requirement of having circuits with different thicknesses to meet subsequent applications.
[0003] Therefore, the applicant believes that the above defects can be improved. After painstaking research and in combination with the application of scientific principles, a design that is reasonable and effectively improves the above defects is finally proposed in this application. Summary of the Invention
[0004] This application provides a composite circuit board structure and a manufacturing method thereof, which can effectively improve the defects that may occur in existing ceramic circuit boards.
[0005] This application discloses a manufacturing method of a composite circuit board structure, which includes: a preparation step: providing a metallized ceramic substrate, which includes: a ceramic plate body having a first plate surface and a second plate surface located on opposite sides; and a first metal layer and a second metal layer respectively formed on the first plate surface and the second plate surface of the ceramic plate body; a patterning step: patterning the first metal layer so that a part of the first metal layer is removed to form a first thick circuit layer; wherein, the thickness of the first thick circuit layer is not less than 200 microns, and a part of the first plate surface is exposed outside the first thick circuit layer and is defined as a first processing area; a sputtering step: sputtering and forming a first sputtered conductor layer on the first processing area of the ceramic plate body; a masking step: forming a first masking layer on the first sputtered conductor layer, which has a first patterned slot hole so that a part of the first sputtered conductor layer is exposed outside the first masking layer from the first patterned slot hole and is defined as a first sputtered layout block; an electroplating step: electroplating the first sputtered layout block of the first sputtered conductor layer to form a first electroplated layer connected to the first sputtered layout block; and a chemical etching step: removing the first masking layer and the first sputtered conductor layer masked by it to leave the first electroplated layer and its connected first sputtered layout block, and jointly defining them as a first thin circuit layer; wherein, the thickness of the first thin circuit layer is between 1 micron and 150 microns.
[0006] Optionally, the first thin circuit layer has multiple circuits, and the minimum value that can be formed between any two adjacent circuits or the line width of any one circuit after the masking step, the electroplating step and the chemical etching step is between 30 microns and 60 microns.
[0007] Optionally, the thickness of the first sputtering-type layout block ranges from 0.1 micrometer to 1 micrometer, and the material of the first electroplated layer is different from that of the first sputtering-type layout block, so that no lateral etching occurs to the first electroplated layer during the chemical etching step.
[0008] Optionally, during the patterning step, the second metal layer is patterned to remove a part thereof to form a second thick circuit layer with a thickness of not less than 200 micrometers.
[0009] Optionally, during the patterning step, a part of the second board surface is exposed outside the second thick circuit layer and defined as a second processing area; during the sputtering step, a second sputtering conductor layer is formed by sputtering on the second processing area; during the masking step, a second masking layer is formed on the second sputtering conductor layer.
[0010] Optionally, during the chemical etching step, the second masking layer and the second sputtering conductor layer are removed to expose the second processing area.
[0011] Optionally, during the masking step, the second masking layer has a second patterned via hole, so that a part of the second sputtering conductor layer is exposed outside the second masking layer from the second patterned via hole and defined as a second sputtering-type layout block; during the electroplating step, the second sputtering-type layout block is electroplated to form a second electroplated layer connected thereto; during the chemical etching step, the second masking layer and the second sputtering conductor layer masked thereby are removed to leave the second electroplated layer and the second sputtering-type layout block connected thereto, which are jointly defined as a second thin circuit layer.
[0012] Optionally, during the preparation step, the metallized ceramic substrate is a direct copper clad ceramic substrate, and the first metal layer and the second metal layer are respectively sintered and fixed on the first board surface and the second board surface of the ceramic plate body.
[0013] Optionally, during the preparation step, the metallized ceramic substrate is an active metal brazed ceramic substrate, and the first metal layer and the second metal layer are respectively brazed and fixed on the first board surface and the second board surface of the ceramic plate body.
[0014] The present application also discloses a composite circuit board structure, which includes: a ceramic board body having a first board surface and a second board surface located on opposite sides respectively; a first thick circuit layer formed on the first board surface of the ceramic board body, and the thickness of the first thick circuit layer is not less than 200 micrometers; wherein, a part of the first board surface is exposed outside the first thick circuit layer and is defined as a first processing area; and a first thin circuit layer formed on the first processing area of the first board surface, and the thickness of the first thin circuit layer is between 1 micrometer and 150 micrometers; wherein, the first thin circuit layer includes a first sputtering type layout block connected to the first board surface and a first electroplated layer connected to the first sputtering type layout block, and the material of the first electroplated layer is different from that of the first sputtering type layout block.
[0015] Optionally, the first thick circuit layer and the first thin circuit layer are arranged at intervals from each other.
[0016] Optionally, the composite circuit board structure includes at least one lateral joint formed on the first board surface, and at least one lateral joint is connected between the first thick circuit layer and the first thin circuit layer.
[0017] Optionally, the thickness of at least one lateral joint gradually decreases from the first thick circuit layer towards the first thin circuit layer.
[0018] Optionally, the composite circuit board structure further includes a second thick circuit layer formed on the second board surface of the ceramic board body; wherein, the thickness of the second thick circuit layer is not less than 200 micrometers.
[0019] Optionally, a part of the second board surface is exposed outside the second thick circuit layer and is defined as a second processing area; the composite circuit board structure further includes a sputtering type circuit layer formed on the second processing area of the second board surface, and the thickness of the sputtering type circuit layer is between 0.1 micrometer and 1 micrometer.
[0020] Optionally, the first thick circuit layer and the second thick circuit layer are respectively sintered and fixed on the first board surface and the second board surface of the ceramic board body.
[0021] Optionally, the first thick circuit layer and the second thick circuit layer are respectively brazed and fixed on the first board surface and the second board surface of the ceramic board body.
[0022] Optionally, the first thin circuit layer is formed above a projection area formed by the orthographic projection of the second thick circuit layer towards the first board surface.
[0023] Optionally, the first thin circuit layer has multiple circuits, and the lower limit value formed by the line distance between any two adjacent circuits or the line width of any one circuit is between 30 micrometers and 60 micrometers.
[0024] The present application further discloses a composite circuit board structure, which includes: a ceramic board body having a first board surface and a second board surface located on opposite sides respectively; a first thick circuit layer formed on the first board surface of the ceramic board body, and the thickness of the first thick circuit layer is not less than 200 micrometers; wherein, a part of the first board surface is exposed outside the first thick circuit layer and is defined as a first processing area; and a sputtering-type circuit layer formed on the first processing area of the first board surface, and the thickness of the sputtering-type circuit layer is between 0.1 micrometer and 1 micrometer.
[0025] Advantages of the invention
[0026] In summary, for the composite circuit board structure and its manufacturing method disclosed in the present application, the steps and architecture adopted only form a small amount of lateral etching in the first sputtering-type layout block (or the sputtering-type circuit layer), so as not to affect the accuracy of the first thin circuit layer (or the sputtering-type circuit layer) and will not cause its short circuit, and the first thick circuit layer and the first thin circuit layer (or the sputtering-type circuit layer) can be accurately formed under the above process flow to meet different requirements.
[0027] To further understand the features and technical content of the present application, please refer to the following detailed description and drawings of the present application. However, these description and drawings are only used to illustrate the present application and do not impose any limitation on the protection scope of the present application. Description of the drawings
[0028] Figure 1 It is a flowchart of the steps of the manufacturing method of the composite circuit board structure according to Embodiment 1 of the present application.
[0029] Figure 2 For Figure 1 a schematic diagram of the preparation step in
[0030] Figure 3 For Figure 1 a schematic diagram of the patterning step in
[0031] Figure 4 For Figure 1 a schematic diagram of the sputtering step in
[0032] Figure 5 For Figure 1 a schematic diagram of the masking step in
[0033] Figure 6 For Figure 1 a schematic diagram of the electroplating step in
[0034] Figure 7 For Figure 1 a schematic diagram of the chemical etching step in
[0035] Figure 8 Schematic diagram (1) of the variant form of the composite circuit board structure according to the first embodiment of the present application.
[0036] Figure 9 Schematic diagram (2) of the variant form of the composite circuit board structure according to the first embodiment of the present application.
[0037] Figure 10 Schematic diagram (3) of the variant form of the composite circuit board structure according to the first embodiment of the present application.
[0038] Figure 11 Schematic diagram of the composite circuit board structure according to the second embodiment of the present application.
[0039] Figure 12 Schematic diagram of the masking step in the manufacturing method of the composite circuit board structure according to the third embodiment of the present application.
[0040] Figure 13 Schematic diagram of the electroplating step in the manufacturing method of the composite circuit board structure according to the third embodiment of the present application.
[0041] Figure 14 Schematic diagram of the chemical etching step in the manufacturing method of the composite circuit board structure according to the third embodiment of the present application.
[0042] Figure 15 Schematic diagram of the composite circuit board structure according to the fourth embodiment of the present application. Detailed implementation manners
[0043] The following are specific embodiments to illustrate the implementation manners of the "composite circuit board structure and its manufacturing method" disclosed in the present application. Those skilled in the art can understand the advantages and effects of the present application from the content disclosed in this specification. The present application can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present application. Additionally, the drawings of the present application are only simple schematic illustrations and are not drawn according to actual sizes, which is stated in advance. The following implementation manners will further detail the relevant technical content of the present application, but the disclosed content is not used to limit the protection scope of the present application.
[0044] It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another, or one signal from another. Additionally, the term "or" used herein should, depending on the actual situation, may include any one or a combination of more of the associated listed items.
[0045] Embodiment 1
[0046] Please refer to Figures 1 to 10 as shown below, which is Embodiment 1 of the present application. As Figures 1 to 7 shown, this embodiment discloses a manufacturing method S100 for a composite circuit board structure, which sequentially includes (or implements) a preparation step S110, a patterning step S120, a sputtering step S130, a masking step S140, an electroplating step S150, and a chemical etching step S160.
[0047] In the following, this embodiment will introduce the multiple steps S110 - S160 of the manufacturing method S100 for the composite circuit board structure in sequence, and then manufacture a composite circuit board structure 100, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the above multiple steps S110 - S160 of the manufacturing method S100 for the composite circuit board structure can be increased, decreased, or adjusted according to design requirements.
[0048] The preparation step S110: As Figure 1 and Figure 2 shown, provide a metallized ceramic substrate 1, which includes a ceramic plate body 13, and a first metal layer 11 and a second metal layer 12 respectively formed on opposite sides of the ceramic plate body 13. That is to say, the ceramic plate body 13 has a first plate surface 131 and a second plate surface 132 located on opposite sides, and the first metal layer 11 and the second metal layer 12 are respectively formed on the first plate surface 131 and the second plate surface 132.
[0049] It should be noted that in the preparation step S110, the metallized ceramic substrate 1 can adopt a direct bonded copper (DBC) ceramic substrate, and the first metal layer 11 and the second metal layer 12 are respectively sintered and fixed on the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13; that is to say, in this embodiment, the first metal layer 11 and the second metal layer 12 are each fixed to the ceramic plate body 13 through a connection layer 14 (such as a sintered layer).
[0050] Or, in the preparation step S110, the metallized ceramic substrate 1 can also adopt an active metal brazing (AMB) ceramic substrate, and the first metal layer 11 and the second metal layer 12 are respectively brazed and fixed on the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13; that is to say, in this embodiment, the first metal layer 11 and the second metal layer 12 are each fixed to the ceramic plate body 13 through a connection layer 14 (such as a brazed layer).
[0051] The patterning step S120: As Figures 1 to 3 shown, pattern the first metal layer 11 and the second metal layer 12 so that a part of the first metal layer 11 is removed to form a first thick circuit layer 111, and a part of the second metal layer 12 is removed to form a second thick circuit layer 121, and the first thick circuit layer 111 and the second thick circuit layer 121 may have different patterns (or thicknesses) from each other, but this application does not limit it. For example, in other embodiments not shown in this application, the manufacturing method S100 of the composite circuit board structure may omit the patterning of the second metal layer 12 according to design requirements (that is, the second metal layer 12 may remain in its initial structure and the second thick circuit layer 121 is not formed).
[0052] More specifically, the patterning method of the first metal layer 11 and the second metal layer 12 may be implemented by methods such as film pasting, exposure, and development, which are not limited herein. Furthermore, the thickness of the first thick circuit layer 111 and the thickness of the second thick circuit layer 121 are each not less than 200 micrometers (μm), and a part of the first board surface 131 is exposed outside the first thick circuit layer 111 and is defined as a first processing area 1311, and a part of the second board surface 132 is exposed outside the second thick circuit layer 121 and is defined as a second processing area 1321.
[0053] The sputtering step S130: As Figure 1 , Figure 3 , and Figure 4 shown, a first sputtered conductor layer 2 is formed by sputtering in the first processing area 1311 of the ceramic plate body 13, and a second sputtered conductor layer 3 is formed by sputtering in the second processing area 1321, but this application is not limited thereto. For example, in other embodiments not shown in this application, when the second metal layer 12 is not patterned in the patterning step S120, the manufacturing method S100 of the composite circuit board structure does not form the second processing area 1321 and the second sputtered conductor layer 3 thereon.
[0054] More specifically, the material of the first sputtered conductor layer 2 is the same as the material of the second sputtered conductor layer 3, and the thickness of the first sputtered conductor layer 2 and the thickness of the second sputtered conductor layer 3 are each between 0.1 micrometer and 1 micrometer.
[0055] The masking step S140: As Figure 1 , Figure 4 , and Figure 5As shown, a first masking layer 4 is formed on the first sputtered conductor layer 2, and a second masking layer 5 is formed on the second sputtered conductor layer 3. Among them, the first masking layer 4 has a first patterned through-hole 41, so that a part of the first sputtered conductor layer 2 is exposed outside the first masking layer 4 from the first patterned through-hole 41 and is defined as a first sputtered type layout block 21, but the present application is not limited thereto.
[0056] For example, in other embodiments not shown in the present application, when the second metal layer 12 is not patterned, the method S100 for manufacturing the composite circuit board structure may also not form the second masking layer 5 covering the second sputtered conductor layer 3 according to design requirements.
[0057] The electroplating step S150: As Figure 1 , Figure 5 , and Figure 6 shown, electroplate the first sputtered type layout block 21 of the first sputtered conductor layer 2 to form a first electroplated layer 6 connected to the first sputtered type layout block 21. In this embodiment, the material of the first electroplated layer 6 is different from that of the first sputtered type layout block 21, so as to facilitate that the first electroplated layer 6 does not generate lateral etching in the following chemical etching step S160, but is not limited thereto.
[0058] The chemical etching step S160: As Figure 1 , Figure 6 and Figure 7 shown, remove the first masking layer 4 and the first sputtered conductor layer 2 covered by it to leave the first electroplated layer 6 and the first sputtered type layout block 21 connected to it, and jointly define them as a first thin circuit layer C1. Among them, the thickness of the first thin circuit layer C1 is between 1 micron and 150 microns, and the thickness of the first sputtered type layout block 21 is between 0.1 micron and 1 micron. Furthermore, the chemical etching step S160 also removes the second masking layer 5 and the second sputtered conductor layer 3 in this embodiment, so that the second processing area 1321 is exposed.
[0059] As described above, in the chemical etching step S160 of the method S100 for manufacturing the composite circuit board structure, only a small amount of lateral etching is formed in the first sputtered type layout block 21, so it will not affect the accuracy of the first thin circuit layer C1, nor will it cause a short circuit in the first thin circuit layer C1, and the first thick circuit layer 111 and the first thin circuit layer C1 can be accurately formed under the above process flow to meet different requirements.
[0060] More specifically, in this embodiment, the first thin circuit layer C1 may have multiple circuits C11, and the line pitch G between any two adjacent circuits C11 or the line width W of any one of the circuits C11, after passing through the masking step S140 (such as: Figure 5 ), the electroplating step S150 (such as: Figure 6 ), and the chemical etching step S160 (such as: Figure 7 ), the lower limit value (or minimum value) that can be formed is between 30 microns and 60 microns. That is to say, the line pitch G or the line width W of the first thin circuit layer C1 can be accurately maintained between 30 microns and 60 microns according to design requirements, but is not limited thereto.
[0061] In addition, the above content generally describes the implementation process of the manufacturing method S100 of the composite circuit board structure in this embodiment. Next, the specific structure of the composite circuit board structure 100 manufactured by the manufacturing method S100 of the composite circuit board structure will be generally introduced from the perspective of the structure. Accordingly, some technical features of the composite circuit board structure 100 can refer to the content of the manufacturing method S100 of the composite circuit board structure above, but this application is not limited thereto.
[0062] In this embodiment, the composite circuit board structure 100 includes the ceramic plate body 13, the first thick circuit layer 111 and the first thin circuit layer C1 formed on the first board surface 131, and the second thick circuit layer 121 formed on the second board surface 132. Among them, the thickness of the first thick circuit layer 111 and the thickness of the second thick circuit layer 121 are the same as each other and are not less than 200 microns, but are not limited thereto.
[0063] In this embodiment, the first thick circuit layer 111 and the second thick circuit layer 121 are respectively sintered and fixed (through two connection layers 14) to the first board surface 131 and the second board surface 132 of the ceramic plate body 13. Alternatively, the first thick circuit layer 111 and the second thick circuit layer 121 are respectively brazed and fixed (through two connection layers 14) to the first board surface 131 and the second board surface 132 of the ceramic plate body 13.
[0064] More specifically, the first processing area 1311 on the first board surface 131 is not covered by the first thick circuit layer 111 and is not connected to the corresponding connection layer 14, and the second processing area 1321 on the second board surface 132 is not covered by the second thick circuit layer 121 and is not connected to the corresponding connection layer 14.
[0065] Furthermore, the first thin circuit layer C1 is formed in the first processing area 1311 of the first board surface 131, and the first thin circuit layer C1 and the first thick circuit layer 111 are arranged at intervals from each other. In this embodiment, no circuit is formed in the second processing area 1321 of the second board surface 132. Among them, the first thin circuit layer C1 has a plurality of circuits C11, and the lower limit value formed by the line pitch G between any two adjacent circuits C11 or the line width W of any one circuit C11 is between 30 microns and 60 microns.
[0066] Further, in this embodiment, the first thin circuit layer C1 includes a first sputtering type layout block 21 connected to the first board surface 131 and a first electroplating layer 6 connected to the first sputtering type layout block 21, and the material of the first electroplating layer 6 is different from that of the first sputtering type layout block 21. Among them, the thickness of the first thin circuit layer C1 is between 1 micron and 150 microns, and the thickness of the first sputtering type layout block 21 is between 0.1 micron and 1 micron.
[0067] In addition, although the composite circuit board structure 100 is described above by taking Figure 7 the shown structure as an example, it can be adjusted and changed according to design requirements. For example, as Figures 8 to 10 shown, the second thick circuit layer 121 can also be a structure without any patterning, and the first thin circuit layer C1 is formed on a projection area formed by the positive projection of the second thick circuit layer 121 toward the first board surface 131.
[0068] Furthermore, as Figure 9 shown, the composite circuit board structure 100 includes a lateral joint C4 formed on one side of the first board surface 131, and the lateral joint C4 is connected between the first thick circuit layer 111 and the first thin circuit layer C1. Among them, the thickness of the lateral joint C4 gradually decreases from the first thick circuit layer 111 toward the first thin circuit layer C1; that is to say, the cross section of the lateral joint C4 is substantially triangular.
[0069] Or, as Figure 10 shown, the composite circuit board structure 100 includes two lateral joints C4 formed on the first board surface 131, and each lateral joint C4 is connected between the first thick circuit layer 111 and the first thin circuit layer C1; that is to say, the two lateral joints C4 are respectively connected to opposite sides of the first thick circuit layer 111 and are respectively connected to two circuits C11 of the first thin circuit layer C1 adjacent to the first thick circuit layer 111.
[0070] Wherein, the thickness of each of the lateral joint portions C4 gradually decreases from the first thick circuit layer 111 towards the first thin circuit layer C1; that is, the cross-section of each of the lateral joint portions C4 is substantially triangular, and one corresponding connection layer 14 is embedded between two of the lateral joint portions C4 and the first thick circuit layer 111.
[0071] Embodiment 2
[0072] Please refer to Figure 11 as shown, which is Embodiment 4 of the present application. Since this embodiment is similar to Embodiment 1 above, the similarities between the two embodiments will not be elaborated again, and the differences between this embodiment and Embodiment 1 above are generally described as follows:
[0073] In this embodiment, the composite circuit board structure 100 is not formed with the first electroplated layer, and the first sputtering type layout block 21 is defined as a sputtering type circuit layer C3. In other words, the sputtering type circuit layer C3 of the composite circuit board structure 100 is formed in the first processing area 1311 of the first board surface 131 in this embodiment, and the thickness of the sputtering type circuit layer C3 is between 0.1 micrometer and 1 micrometer.
[0074] Embodiment 3
[0075] Please refer to Figures 12 to 14 as shown, which is Embodiment 3 of the present application. Since this embodiment is similar to Embodiment 1 above, the similarities between the two embodiments will not be elaborated again (such as: the preparation step, the patterning step, and the sputtering step), and the differences between this embodiment and Embodiment 1 above are generally described as follows:
[0076] The masking step S140: As Figure 12 shown, a first masking layer 4 is formed on the first sputtered conductor layer 2, and a second masking layer 5 is formed on the second sputtered conductor layer 3. Wherein, the first masking layer 4 has a first patterned slot 41, so that a part of the first sputtered conductor layer 2 is exposed outside the first masking layer 4 from the first patterned slot 41 and is defined as a first sputtering type layout block 21. Furthermore, the second masking layer 5 has a second patterned slot 51, so that a part of the second sputtered conductor layer 3 is exposed outside the second masking layer 5 from the second patterned slot 51 and is defined as a second sputtering type layout block 31, but the present application is not limited thereto.
[0077] The electroplating step S150: As Figure 12 and Figure 13As shown, electroplate the first sputtering type layout block 21 of the first sputtering conductor layer 2 and the second sputtering type layout block 31 of the second sputtering conductor layer 3 to form a first electroplated layer 6 connected to the first sputtering type layout block 21 and a second electroplated layer 7 connected to the second sputtering type layout block 31. And the materials of the first electroplated layer 6 and the second electroplated layer 7 are the same, but different from the material of the first sputtering type layout block 21. However, the present application is not limited thereto.
[0078] The chemical etching step S160: As Figure 13 and Figure 14 shown, remove the first masking layer 4 and the first sputtering conductor layer 2 masked thereby, and remove the second masking layer 5 and the second sputtering conductor layer 3 masked thereby, to leave the first electroplated layer 6 and the first sputtering type layout block 21 connected thereto, and jointly define them as a first thin circuit layer C1. Also leave the second electroplated layer 7 and the second sputtering type layout block 31 connected thereto, and jointly define them as a second thin circuit layer C2.
[0079] Embodiment 4
[0080] Please refer to Figure 15 shown, which is Embodiment 3 of the present application. Since this embodiment is similar to Embodiment 3 above, the similarities between the two embodiments will not be elaborated again, and the differences between this embodiment and Embodiment 3 above are generally described as follows:
[0081] In this embodiment, the composite circuit board structure 100 does not form the second electroplated layer 7, and the second sputtering type layout block 31 is defined as a sputtering type circuit layer C3. In other words, the sputtering type circuit layer C3 of the composite circuit board structure 100 is formed in the second processing area 1321 of the second board surface 132 in this embodiment, and the thickness of the sputtering type circuit layer C3 is between 0.1 micrometer and 1 micrometer.
[0082] Accordingly, the composite circuit board structure 100 can form three different types of circuits in this embodiment (such as: the first thick circuit layer 111 formed by sintering or soldering, the first thin circuit layer C1 formed by sputtering and electroplating, and the sputtering type circuit layer C3 formed by sputtering), so as to meet more different requirements.
[0083] Technical effects of the present application
[0084] In summary, for the composite circuit board structure and its manufacturing method disclosed in the embodiments of the present application, the steps and architecture adopted only form a small amount of lateral etching in the first sputtering type layout block (or the sputtering type circuit layer), so as not to affect the accuracy of the first thin circuit layer (or the sputtering type circuit layer) and will not cause its short circuit. Moreover, the first thick circuit layer and the first thin circuit layer (or the sputtering type circuit layer) can be accurately formed under the above process flow to meet different requirements.
[0085] The content disclosed above is only the preferred feasible embodiment of the present application, and does not limit the patent scope of the present application. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present application are included in the patent scope of the present application.
Claims
1. A manufacturing method of a composite circuit board structure, characterized in that, The manufacturing method of the composite circuit board structure includes: A preparation step: providing a metallized ceramic substrate, which includes: A ceramic plate body having a first plate surface and a second plate surface located on opposite sides respectively; and A first metal layer and a second metal layer formed on the first plate surface and the second plate surface of the ceramic plate body respectively; A patterning step: patterning the first metal layer so that a part of the first metal layer is removed to form a first thick circuit layer; wherein, the thickness of the first thick circuit layer is not less than 200 microns, and a part of the first plate surface is exposed outside the first thick circuit layer and defined as a first processing area; A sputtering step: sputtering and forming a first sputtered conductor layer on the first processing area of the ceramic plate body; A masking step: forming a first masking layer on the first sputtered conductor layer, which has a first patterned slot hole, so that a part of the first sputtered conductor layer is exposed outside the first masking layer from the first patterned slot hole and defined as a first sputtered layout block; An electroplating step: electroplating the first sputtered layout block of the first sputtered conductor layer to form a first electroplated layer connected to the first sputtered layout block; and A chemical etching step: removing the first masking layer and the first sputtered conductor layer masked by it to leave the first electroplated layer and its connected first sputtered layout block, and jointly defining them as a first thin circuit layer; wherein, the thickness of the first thin circuit layer is between 1 micron and 150 microns.
2. The manufacturing method of the composite circuit board structure according to claim 1, characterized in that, The first thin circuit layer has multiple circuits, and the minimum value that can be formed between any two adjacent circuits or the line width of any one circuit after the masking step, the electroplating step, and the chemical etching step is between 30 microns and 60 microns.
3. The manufacturing method of the composite circuit board structure according to claim 1, characterized in that, The thickness of the first sputtered layout block is between 0.1 micron and 1 micron, and the material of the first electroplated layer is different from that of the first sputtered layout block, so that the first electroplated layer does not produce lateral etching during the chemical etching step.
4. The manufacturing method of the composite circuit board structure according to claim 1, characterized in that, During the patterning step, the second metal layer is patterned to remove a part of it to form a second thick circuit layer, and its thickness is not less than 200 microns.
5. The manufacturing method of the composite circuit board structure according to claim 4, characterized in that, During the patterning step, a part of the second plate surface is exposed outside the second thick circuit layer and defined as a second processing area; during the sputtering step, a second sputtered conductor layer is sputtered and formed on the second processing area; during the masking step, a second masking layer is formed on the second sputtered conductor layer.
6. The manufacturing method of the composite circuit board structure according to claim 5, characterized in that, During the chemical etching step, the second masking layer and the second sputtered conductor layer are removed to expose the second processing area to the outside.
7. The manufacturing method of the composite circuit board structure according to claim 5, characterized in that, In the masking step, the second masking layer has a second patterned via hole, so that a part of the second sputtered conductor layer is exposed outside the second masking layer from the second patterned via hole and is defined as a second sputtered layout block; in the electroplating step, a second electroplated layer connected thereto is electroplated on the second sputtered layout block; in the chemical etching step, the second masking layer and the second sputtered conductor layer masked thereby are removed to leave the second electroplated layer and the second sputtered layout block connected thereto, and they are jointly defined as a second thin circuit layer.
8. The manufacturing method of the composite circuit board structure according to claim 1, characterized in that, In the preparation step, the metallized ceramic substrate is a direct copper clad ceramic substrate, and the first metal layer and the second metal layer are sintered and fixed to the first plate surface and the second plate surface of the ceramic plate body respectively.
9. The manufacturing method of the composite circuit board structure according to claim 1, characterized in that, In the preparation step, the metallized ceramic substrate is an active metal brazed ceramic substrate, and the first metal layer and the second metal layer are brazed and fixed to the first plate surface and the second plate surface of the ceramic plate body respectively.
10. A composite circuit board structure, characterized in that, The composite circuit board structure includes: a ceramic plate body having a first plate surface and a second plate surface located on opposite sides respectively; a first thick circuit layer formed on the first plate surface of the ceramic plate body, and the thickness of the first thick circuit layer is not less than 200 microns; wherein, a part of the first plate surface is exposed outside the first thick circuit layer and is defined as a first processing area; and a first thin circuit layer formed on the first processing area of the first plate surface, and the thickness of the first thin circuit layer is between 1 micron and 150 microns; wherein, the first thin circuit layer includes a first sputtered layout block connected to the first plate surface and a first electroplated layer connected to the first sputtered layout block, and the material of the first electroplated layer is different from that of the first sputtered layout block.
11. The composite circuit board structure according to claim 10, characterized in that, The first thick circuit layer and the first thin circuit layer are arranged at intervals from each other.
12. The composite circuit board structure according to claim 10, characterized in that, The composite circuit board structure includes at least one lateral joint formed on the first plate surface, and at least one of the lateral joints is connected between the first thick circuit layer and the first thin circuit layer.
13. The composite circuit board structure according to claim 12, characterized in that, The thickness of at least one of the lateral joints gradually decreases from the first thick circuit layer towards the first thin circuit layer.
14. The composite circuit board structure according to claim 10, wherein The composite circuit board structure further includes a second thick circuit layer formed on the second plate surface of the ceramic plate body; wherein, the thickness of the second thick circuit layer is not less than 200 microns.
15. The composite circuit board structure according to claim 14, wherein A part of the second plate surface is exposed outside the second thick circuit layer and is defined as a second processing area; the composite circuit board structure further includes a sputtered circuit layer formed on the second processing area of the second plate surface, and the thickness of the sputtered circuit layer is between 0.1 micron and 1 micron.
16. The composite circuit board structure according to claim 14, wherein The first thick circuit layer and the second thick circuit layer are sintered and fixed to the first plate surface and the second plate surface of the ceramic plate body respectively.
17. The composite circuit board structure according to claim 14, wherein The first thick circuit layer and the second thick circuit layer are respectively fixed to the first plate surface and the second plate surface of the ceramic plate body by brazing.
18. The composite circuit board structure according to claim 14, wherein The first thin circuit layer is formed above a projection area formed by the positive projection of the second thick circuit layer toward the first plate surface.
19. The composite circuit board structure according to claim 10, wherein The first thin circuit layer has a plurality of circuits, and the lower limit value that can be formed by the line pitch between any two adjacent circuits or the line width of any one circuit is between 30 micrometers and 60 micrometers.
20. A composite circuit board structure, wherein The composite circuit board structure includes: a ceramic plate body having a first plate surface and a second plate surface located on opposite sides respectively; a first thick circuit layer formed on the first plate surface of the ceramic plate body, and the thickness of the first thick circuit layer is not less than 200 micrometers; wherein, a part of the first plate surface is exposed outside the first thick circuit layer and is defined as a first processing area; and a sputtered circuit layer formed on the first processing area of the first plate surface, and the thickness of the sputtered circuit layer is between 0.1 micrometer and 1 micrometer.