Substrate processing apparatus and substrate processing method using the same

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus comprising: a process chamber for performing a deposition process on a substrate; a heater that is disposed inside the process chamber and heats the substrate; a substrate processing method using a substrate processing apparatus including a process chamber for performing a deposition process on a substrate, a heater disposed inside the process chamber for heating the substrate, and a pad capable of moving up and down along an inner wall of the process chamber, the substrate processing apparatus including the process chamber for performing a deposition process on the substrate, and the pad disposed inside the process chamber for heating the substrate. The pad is disposed along an inner wall of the process chamber, and the substrate processing method includes: a deposition step of performing a deposition process on a substrate; a moving step of moving the heater downward; a plasma diffusion step in which plasma is diffused inside the process chamber; and a particle pumping step in which particles generated in the deposition step are pumped by moving along the diffused plasma.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus and a substrate processing method capable of significantly reducing particles that fall on a substrate due to plasma diffusion and particle pumping after a deposition process performed in a process chamber, improving film performance, and reducing process defects. Background Art

[0002] In the semiconductor device manufacturing process, etching, deposition, or various other processes can be performed on a substrate. For example, in a substrate processing system, various deposition processes such as atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) for forming a thin film on a substrate, an etching process, or other processes are implemented, and a radio frequency (RF) electric field for generating plasma is generally applied in a process chamber.

[0003] A heater for heating a substrate disposed above the heater is disposed in the process chamber, and the heater can move up and down in the process chamber. That is, the heater can be located below before the deposition process is performed and can be located above during the deposition process.

[0004] In addition, a ceramic liner is generally provided on the inner wall of the process chamber. The ceramic liner can maintain the temperature of the heater in the process chamber, reduce the accumulation of residues generated by plasma in the process chamber, and at the same time focus the plasma on the substrate area where the process is performed. Unlike the heater, the ceramic liner is disposed in the process chamber in a fixed state.

[0005] On the other hand, in the above deposition process using plasma, due to the process characteristics, particles are inevitably generated, and the particles exist in a floating state in the generated plasma. When the deposition process ends, the plasma is turned off, and thus the particles floating in the plasma fall onto the substrate to generate in-film particles. Such in-film particles act as a main factor causing process defects.

[0006] Therefore, in order to prevent such problems, a cleaning process is usually performed on the process chamber as part of regular maintenance work. However, there is still a need for a method that can more effectively reduce particles without performing a separate cleaning process.

[0007] The prior art is technical information that the inventor has for deriving the present invention or has obtained in the process of deriving the present invention, and is not necessarily prior art publicly known to the general public before applying for the present invention.

[0008] Prior art documents

[0009] Patent documents

[0010] (Patent Document 1) Korean Patent Publication No. 10-2008-0062112 (published on July 3, 2008) Summary of the Invention

[0011] Technical Problem

[0012] In the process of solving the above problems, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can significantly reduce the particles falling on the substrate due to plasma diffusion and particle pumping after a deposition process performed in a process chamber, improve the film performance, and reduce process defects.

[0013] The problems to be solved by the present invention are not limited to the above-mentioned problems, and those skilled in the art to which the present invention pertains can clearly understand other problems to be solved that are not mentioned from the following description.

[0014] Means for Solving the Problem

[0015] A substrate processing apparatus according to an embodiment of the present invention includes: a process chamber that performs a deposition process on a substrate; a heater disposed inside the process chamber to heat the substrate; and a gasket that can move up and down along the inner wall of the process chamber.

[0016] At this time, the gasket may include a ceramic gasket.

[0017] Furthermore, a substrate processing apparatus according to an embodiment of the present invention may further include: a bellows that can move the gasket up and down; and a power supply device connected to the bellows to provide power to contract or expand the bellows.

[0018] Furthermore, the heater can move up and down inside the process chamber, and may be located at the upper part during the deposition process and at the lower part after the deposition process.

[0019] Furthermore, the gasket may be located at the upper part during the deposition process and at the lower part after the deposition process.

[0020] Also, after the deposition process, the above-described gasket can be located at a level lower than that of the above-described heater.

[0021] A substrate processing method according to an embodiment of the present invention uses a substrate processing apparatus, the substrate processing apparatus including a process chamber, a heater, and a gasket. The process chamber performs a deposition process on a substrate. The heater is disposed inside the process chamber to heat the substrate. The gasket is disposed along the inner wall of the process chamber. The substrate processing method includes: a deposition step of performing a deposition process on a substrate; a movement step of moving the above-described heater downward; a plasma diffusion step of diffusing plasma inside the above-described process chamber; and a particle pumping step of pumping particles generated during the above-described deposition process to move along the diffused plasma.

[0022] At this time, the above-described plasma diffusion step and the above-described particle pumping step can be performed using plasma generated from an inert gas.

[0023] Also, the above-described plasma diffusion step and the above-described particle pumping step can be performed under conditions of a lower high-frequency power and a lower pressure than the high-frequency power and pressure during the above-described deposition process.

[0024] Also, the above-described plasma diffusion step and the above-described particle pumping step can be performed under conditions of a high-frequency power of 10 to 1000 W and a pressure of 0.01 to 10 torr.

[0025] Also, the above-described plasma diffusion step and the above-described particle pumping step can be performed with a pressure regulating device for regulating the pressure inside the above-described process chamber being open.

[0026] Also, the above-described gasket can move up and down along the inner wall of the above-described process chamber. In the above-described movement step, the above-described gasket can be moved downward together with the above-described heater.

[0027] Also, the above-described gasket can be moved using a bellows and a power supply device. The bellows can move the above-described gasket up and down. The power supply device is connected to the bellows to provide power to contract or expand the bellows.

[0028] Also, after the above-described movement step, the above-described gasket can be located at a level lower than that of the above-described heater.

[0029] Effects of the Invention

[0030] As described above, in the substrate processing apparatus according to the present invention, the ceramic gasket disposed inside the process chamber is configured to be movable and moves downward after the deposition process, so that a space for diffusing plasma can be more effectively ensured.

[0031] Moreover, according to the substrate processing method of the present invention, the particles falling on the substrate due to plasma diffusion and particle pumping can be significantly reduced after the deposition process performed in the process chamber, improving the thin film performance and reducing process defects.

[0032] The effects of the present invention are not limited to the above-mentioned effects, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other effects not mentioned from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 A flowchart for briefly showing a substrate processing method according to an embodiment of the present invention.

[0035] Figure 3a A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention in a deposition step where a heater and a gasket are located above, Figure 3b A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention in a plasma diffusion step and a particle pumping step after the above-mentioned deposition process where the heater and the gasket are located below.

[0036] Figure 4 A flowchart for briefly showing a substrate processing method according to another embodiment of the present invention.

[0037] Figure 5 A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention in a plasma diffusion step and a particle pumping step after the above-mentioned deposition process where the heater is located below and the gasket is located above.

[0038] (Description of Reference Numerals)

[0039] 100: Substrate processing apparatus

[0040] 110: Process chamber

[0041] 120: Heater

[0042] 121: Drive shaft

[0043] 130: Nozzle

[0044] 140: Gasket DETAILED DESCRIPTION OF THE EMBODIMENTS

[0045] In the present invention, the drawings may be represented in an exaggerated manner for the purpose of differentiating from the prior art, clarity, and technical understanding. Moreover, the terms described hereinafter are defined in consideration of the functions in the present invention and may vary depending on the intention of the user, operator, or convention. Therefore, these terms should be defined based on the technical content throughout this specification. On the other hand, the embodiments only pertain to exemplary matters of the structural elements presented within the scope of the rights of the present invention and do not limit the scope of the rights of the present invention. The scope of the rights should be interpreted based on the technical concept throughout the specification of the present invention.

[0046] Throughout the specification, when a structure "comprises" another structure, unless there is a particularly contrary description, it means that other structures may also be included without excluding the remaining other structures.

[0047] Moreover, when a structure is "connected to", "linked to", or "combined with" another structure, this means that there are cases of "directly connected to", "directly linked to", or "directly combined with", and there may also be cases of "connected in a state where other structures are interposed therebetween", "linked in a state where other structures are interposed therebetween", or "combined in a state where other structures are interposed therebetween". On the contrary, when a structure is "directly connected to", "directly linked to", or "directly combined with" another structure, it should be understood that there are no other structures in between.

[0048] Moreover, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc. are used, they are used exemplarily in relation to the direction of the disclosed drawings and thus cannot be restrictively interpreted. When terms such as "first", "second", etc. are used, they are terms for differentiating each structure and cannot be restrictively interpreted.

[0049] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the technical field to which the following embodiments belong are omitted. Moreover, detailed descriptions of parts of the drawings that are irrelevant to the description of the embodiments are omitted.

[0050] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0051] Figure 1 A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention, Figure 2 A flowchart for briefly showing a substrate processing method according to an embodiment of the present invention, Figure 3a A diagram for briefly showing a substrate processing apparatus according to an embodiment of the present invention during a deposition step where a heater and a gasket are located above, Figure 3bFIG. for briefly showing a substrate processing apparatus according to an embodiment of the present invention in a plasma diffusion step and a particle pumping step after the above-described deposition process where a heater and a gasket are located below. Figure 4 FIG. for briefly showing a flowchart of a substrate processing method according to another embodiment of the present invention. Figure 5 FIG. for briefly showing a substrate processing apparatus according to an embodiment of the present invention in a plasma diffusion step and a particle pumping step after the above-described deposition process where a heater is located below and a gasket is located above.

[0052] First, a substrate processing apparatus according to an embodiment of the present invention will be described.

[0053] Referring to Figure 1 , a substrate processing apparatus 100 according to an embodiment of the present invention includes a process chamber 110, a heater 120, and a gasket 140. The substrate processing apparatus 100 according to an embodiment of the present invention may further include a showerhead 130.

[0054] The above-described substrate processing apparatus 100 may represent an apparatus that performs etching, deposition, or various other processes in semiconductor or display manufacturing. As an example, a processing process using plasma may be implemented by means of the above-described substrate processing apparatus 100.

[0055] The above-described process chamber 110 may have an internal space for performing a processing process on a substrate, for example, a deposition process on the substrate, and the above-described internal space may be sealed from the outside. The above-described process chamber 110 may include side walls (not shown) and a lid (not shown) for forming the above-described internal space.

[0056] The shape of the above-described process chamber 110 is not particularly limited and may have various well-known shapes. The above-described process chamber 110 may be configured alone or in combination of two or more.

[0057] The above-described process chamber 110 maintains airtightness during the process of processing or cleaning the above-described substrate, and the vacuum degree of the above-described internal space may be adjusted by a pressure regulating device. The above-described pressure regulating device may include a throttle valve.

[0058] The above-described heater 120 is a structure configured in the above-described process chamber 110 for supporting and heating the above-described substrate. Although not shown, the above-described heater 120 may be provided in a substrate support portion for supporting the above-described substrate, and a lower electrode may be formed in the above-described substrate support portion. The above-described lower electrode may transmit HF power through a transmission line connected to a lower ground terminal from the plasma formed in the above-described process chamber 110.

[0059] The present invention may include a drive shaft 121 extending downward from the bottom surface of the central portion of the substrate support portion. The drive shaft 121 is moved in the vertical direction by a drive unit (not shown), and the substrate flowing into the internal space through the opening of the process chamber 110 can be placed on the substrate support portion.

[0060] The heater 120 can be moved up and down in the process chamber 110 by the drive shaft 122. That is, during the substrate processing step, for example, before and after the deposition step, the heater 120 can be located at the lower part, that is, below, in the process chamber 110, and during the substrate processing step, for example, during the deposition step, it is located at the upper part, that is, above.

[0061] The showerhead 130 can function as an upper electrode that supplies an inert gas or radicals into the process chamber 110 and supplies HF power from an HF power supply source connected to the process chamber 110. A plurality of supply holes of a distribution plate can be provided on the bottom surface of the showerhead 130.

[0062] The gasket 140 can function to maintain the temperature of the heater 120 in the process chamber 110, reduce the accumulation of residues generated by the plasma in the process chamber 110, and at the same time function to focus the plasma on the area within the substrate.

[0063] The gasket 140 is disposed on the inner wall of the process chamber 110 and can move up and down along the inner wall of the process chamber 110.

[0064] The gasket 140 can be located at the upper part, that is, above, during the deposition step, and at the lower part, that is, below, after the deposition step.

[0065] After the deposition step, when both the heater 120 and the gasket 140 are located below, the gasket 140 can be located at a lower level than the heater 120.

[0066] In order to move the gasket 140, a transmission device 141, a bellows 142, and a power device 143 can be provided.

[0067] The transmission device 141 transmits the power provided from the power device 143.

[0068] The bellows 142 has a structure that enables the gasket 140 to move up and down.

[0069] The power device 143 is connected to the bellows 142 and provides power to contract or expand the bellows 142.

[0070] The gasket 140 may include a ceramic gasket.

[0071] In the substrate processing apparatus 100 according to an embodiment of the present invention, after the above-described deposition process, the heater 120 and the gasket 140 move downward. Therefore, after the above-described deposition process, when plasma using an inert gas is maintained and a diffusion process is performed, a space can be ensured in which the plasma can diffuse along the inner space of the process chamber 110 and the inner wall of the process chamber 110. That is, a sheath region of the plasma is formed on the wall side of the process chamber 110, and the plasma can diffuse along this region. Particles generated in the above-described deposition process can be pumped while moving along the plasma diffusion region, thereby reducing the particles falling on the substrate. Therefore, the possibility of particle generation in the film can be reduced, the film performance can be improved, and process defects can be reduced.

[0072] Next, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method according to an embodiment of the present invention is a substrate processing method using a substrate processing apparatus, and the substrate processing apparatus includes: a process chamber that performs a deposition process on a substrate; a heater disposed in the process chamber that heats the substrate; and a gasket disposed along the inner wall of the process chamber. And, the substrate processing method according to an embodiment of the present invention is a substrate processing method using the substrate processing apparatus according to the above embodiment, and for the substrate processing apparatus of the above embodiment, its detailed description is omitted.

[0073] Refer to Figure 2 As shown in, the substrate processing method according to an embodiment of the present invention includes a deposition step S106, a heater and gasket movement step S107, a plasma diffusion step S108, and a particle pumping step S109. And, the substrate processing method according to an embodiment of the present invention may further include a substrate loading step S101, a pumping step S102, a heater movement step S103, a temperature raising step S104, a process gas supply step S105, a purge step S110, a pumping step S111, and a substrate unloading step S112. These steps are process steps usually performed in a substrate processing process including a deposition process, and are widely known in this technical field, and thus their detailed description is omitted in this embodiment.

[0074] In the above-described substrate loading step S101, the substrate can be loaded on the heater 120 in the process chamber 110. In the above-described pumping step S102, the gas in the process chamber 110 is discharged. In the above-described heater movement step S103, the heater 120 located below is moved upward. In the above-described temperature raising step S104, the heater 120 is heated. In the above-described process gas supply step S105, a reaction gas and an inert gas are supplied into the process chamber 110.

[0075] The above deposition step S106 is a step of performing a deposition process to form a thin film on the above substrate.

[0076] The above deposition process can be realized by using plasma.

[0077] In the above deposition step S106, the above heater 120 and the above gasket 140 can be located above.

[0078] When performing the above deposition process, it can play a role of maintaining the temperature of the above heater 120 by using the above gasket 140 disposed on the inner wall of the above process chamber 110, reducing the accumulation of residues generated by plasma in the above process chamber 110, and at the same time focusing the plasma on the area on the above substrate.

[0079] In the above deposition step S106, with the generation of particles, the generated particles float in the plasma.

[0080] Figure 3a A diagram briefly showing the substrate processing apparatus 100 according to an embodiment of the present invention in the above deposition step S106 where the above heater 120 and the above gasket 140 are located above.

[0081] Refer to Figure 3a , plasma is formed in the space between the above heater 120, the above gasket 140 and the above showerhead 130, and particles exist in the plasma.

[0082] The above moving step S107 is a step of moving the above heater 120 and the above gasket 140 downward, that is, downward, after the above deposition step S106.

[0083] That is, in an embodiment of the present invention, after the above deposition process, together with the above heater 120, the above gasket 140 disposed on the inner wall of the above process chamber 110 is also moved downward, so as to ensure a space for the plasma to diffuse along the inner space of the above process chamber 110 and the inner wall of the above process chamber 110.

[0084] The above plasma diffusion step S108 is a step of diffusing plasma in the above process chamber 110.

[0085] In the above moving step S107, a space for diffusing plasma is ensured in the above process chamber 110, a sheath region of the plasma is formed on the wall side of the above process chamber 110, and the above plasma can diffuse along this region.

[0086] The above plasma diffusion step S108 can be achieved in a state where the reactive gas is turned off and only the inert gas is turned on. That is, the above plasma diffusion step S108 can be performed using the plasma generated from the inert gas.

[0087] The inert gas includes argon, helium, nitrogen, etc., but is not limited thereto.

[0088] Moreover, the above plasma diffusion step S108 can be performed under conditions favorable for plasma diffusion.

[0089] In one embodiment, the above plasma diffusion step S108 can be performed under conditions of a lower HF power and a lower pressure than the HF power and pressure in the above deposition process performed in the above deposition step S106.

[0090] In one embodiment, the above plasma diffusion step S108 can be performed under conditions of an HF power of 10 to 1000 W and a pressure of 0.01 to 10 torr.

[0091] In this case, in the above plasma diffusion step S108, the HF power can also be reduced to obtain the effect of minimizing the damage to the above substrate.

[0092] In one embodiment, the above plasma diffusion step S108 can be performed in a state where the pressure regulating device for regulating the pressure inside the above process chamber 110 is turned on. The above pressure regulating device can include a throttle valve.

[0093] The above particle pumping step S109 is a step in which the particles generated in the above deposition process are pumped along the diffused plasma.

[0094] As described above, through the above plasma diffusion step S108, the plasma diffuses into the space inside the above process chamber 110 and the inner wall side of the above process chamber 110, and the particles generated in the above deposition process can be pumped along the plasma diffusion region.

[0095] The above particle pumping step S109 can be achieved in a state where the reactive gas is turned off and only the inert gas is turned on. That is, the above particle pumping step S109 can be performed using the plasma generated from the inert gas.

[0096] The inert gas includes argon, helium, nitrogen, etc., but is not limited thereto.

[0097] In one embodiment, the above particle pumping step S109 can be performed under conditions of a lower HF power and a lower pressure than the HF power and pressure in the above deposition process performed in the above deposition step S106.

[0098] In one embodiment, the particle pumping step S109 can be performed under HF power of 10 to 1000 W and a pressure condition of 0.01 to 10 torr.

[0099] In this case, in the particle pumping step S109, the HF power can also be reduced to obtain the effect of minimizing damage to the substrate.

[0100] In one embodiment, the particle pumping step S109 can be performed with the pressure regulating device for regulating the pressure in the process chamber 110 turned on. The pressure regulating device can include a throttle valve.

[0101] Through the particle pumping step S109, particles can be pumped and removed.

[0102] Figure 3b A diagram for briefly showing the plasma diffusion step S108 and the particle pumping step S109 of the substrate processing apparatus 100 according to an embodiment of the present invention after the deposition process where the heater 110 and the gasket 140 are located below.

[0103] Refer to Figure 3b , through the plasma diffusion step S108 and the particle pumping step S109, the plasma diffuses into the space inside the process chamber 110 and the inner wall side of the process chamber 110, and the particles generated in the deposition process can move along the plasma diffusion region and be pumped.

[0104] In the purging step S110, the residual gas or reaction products can be purged, in the pumping step S111, the residual gas is discharged to the outside, and in the substrate unloading step S112, the substrate is unloaded.

[0105] In the substrate processing method according to the above embodiment, after the deposition step S106, the heater 110 and the gasket 140 are moved downward, and the plasma diffusion step S108 and the particle pumping step S109 are performed. However, in another embodiment, the gasket may move without being fixed. For this, refer to Figure 4 and Figure 5 for description. In this embodiment, for the description related to the above substrate processing apparatus and the substrate processing method, in order to avoid repetition, its detailed description is omitted.

[0106] Refer to Figure 4, the substrate processing method according to this embodiment may include the above-mentioned substrate loading step S101, the above-mentioned pumping step S102, the above-mentioned heater moving step S103, the above-mentioned heating step S104, the above-mentioned process gas supply step S105, the above-mentioned deposition step S106, the heater moving step S107-1, the above-mentioned plasma diffusion step S108, the above-mentioned particle pumping step S109, the above-mentioned purging step S110, the above-mentioned pumping step S111, and the above-mentioned substrate unloading step S112.

[0107] Through the above-mentioned heater moving step S107-1, the above-mentioned heater 110 moves downward, and the above-mentioned gasket 140 is fixed above.

[0108] Therefore, the above-mentioned plasma diffusion step S108 and the above-mentioned particle pumping step S109 can be performed in a state where the above-mentioned heater 110 is located below and the above-mentioned gasket 140 is located above. Even though the above-mentioned gasket 140 is located above, since the above-mentioned heater 110 moves downward, the plasma diffuses toward the inner wall side of the above-mentioned process chamber 110 below the above-mentioned gasket 140, and the particles can be pumped along this area.

[0109] Figure 5 A diagram for briefly showing the substrate processing apparatus according to an embodiment of the present invention in the above-mentioned plasma diffusion step S108 and the above-mentioned particle pumping step S109 after the above-mentioned deposition process where the above-mentioned heater 110 is located below and the above-mentioned gasket 140 is located above.

[0110] Refer to Figure 5 , through the above-mentioned plasma diffusion step S108 and the above-mentioned particle pumping step S109, the plasma diffuses into the space inside the above-mentioned process chamber 110 and the inner wall side of the above-mentioned process chamber 110 below the above-mentioned gasket 140, and the particles generated in the above-mentioned deposition process can move along the above-mentioned plasma diffusion region to be pumped.

[0111] In Figure 2 and Figure 4 In the substrate processing method according to an embodiment of the present invention shown, after the above-mentioned deposition process, the above-mentioned heater 110 or the above-mentioned heater 110 and the above-mentioned gasket 140 are moved downward, and in the above-mentioned plasma diffusion step S108 and the above-mentioned particle pumping step S109, a space can be ensured to allow the plasma to diffuse along the inner space of the above-mentioned process chamber 110 and the inner wall of the above-mentioned process chamber 110. In this regard, the plasma diffuses through the above-mentioned space, and the particles generated in the above-mentioned deposition process can move along the above-mentioned plasma diffusion region to be pumped. Even if the plasma is turned off in subsequent processes, the particles falling on the above-mentioned substrate can be reduced. Therefore, the possibility of particle generation in the film can be reduced, the film performance can be improved, and process defects can be reduced.

[0112] As described above, the present invention is illustrated with reference to the embodiments shown in the drawings, but it should be understood that this is only exemplary, and various modifications and equivalent other embodiments can be made based on the common knowledge in the art to which this technology belongs. Therefore, the true technical protection scope of the present invention is based on the appended claims and should be determined based on the specific content of the above invention.

[0113] Industrial Applicability

[0114] The present invention relates to a substrate processing apparatus and a substrate processing method using the same, and can be used in the industrial fields related to semiconductor device or display manufacturing.

Claims

1. A substrate processing device, characterized in that: include: a process chamber for performing a deposition process on a substrate; A heater, disposed inside the process chamber, for heating the substrate; as well as The liner can move up and down along the inner wall of the process chamber.

2. The substrate processing device according to claim 1, characterized in that: The above-mentioned liner includes a ceramic liner.

3. The substrate processing device according to claim 1, characterized in that: Also includes: a bellows capable of moving the pad up and down; as well as The power supply device is connected to the bellows and provides power to make the bellows contract or expand.

4. The substrate processing device according to claim 1, characterized in that: The heater is movable up and down inside the process chamber, and is located at an upper portion during the deposition process, and is located at a lower portion after the deposition process.

5. The substrate processing apparatus according to claim 1, wherein: The pad is located at an upper portion during the deposition process and is located at a lower portion after the deposition process.

6. The substrate processing apparatus according to claim 1, wherein: The pad is located at a lower level than the heater after the deposition process.

7. A substrate processing method, using a substrate processing device, the substrate processing device comprising a process chamber, a heater and a liner, the process chamber performing a deposition process on a substrate, the heater being arranged inside the process chamber to heat the substrate, the liner being arranged along an inner wall of the process chamber, the substrate processing method being characterized by comprising: A deposition step, performing a deposition process on the substrate; A moving step is to move the heater downward; a plasma diffusion step of diffusing plasma inside the process chamber; and In the particle pumping step, the particles generated in the deposition process are pumped by moving along the diffused plasma.

8. The substrate processing method according to claim 7, characterized in that: The plasma diffusion step and the particle pumping step are performed by using plasma of an inert gas.

9. The substrate processing method according to claim 7, characterized in that: The plasma diffusion step and the particle pumping step are performed under the conditions of a high frequency power and a lower pressure than the high frequency power and the pressure in the deposition process.

10. The substrate processing method according to claim 7, characterized in that: The plasma diffusion step and the particle pumping step are performed under the conditions of a high frequency power of 10 to 1000 W and a pressure of 0.01 to 10 torr.

11. The substrate processing method according to claim 7, characterized in that: The plasma diffusion step and the particle pumping step are performed in a state where a pressure regulating device for regulating the pressure inside the process chamber is turned on.

12. The substrate processing method according to claim 7, characterized in that: The liner can move up and down along the inner wall of the process chamber. In the moving step, the pad is moved downward together with the heater.

13. The substrate processing method according to claim 12, characterized in that: The pad is moved by means of a bellows and a power supply device. The bellows can move the pad up and down. The power supply device is connected to the bellows to provide power to contract or expand the bellows.

14. The substrate processing method according to claim 12, characterized in that: The pad is located at a lower level than the heater after the moving step.

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