Gas transmission device, semiconductor processing device and working method of semiconductor processing device

Abstract

The invention discloses a gas transmission device, a semiconductor processing device and a working method thereof, and the gas transmission device comprises an evaporation source device which comprises an inlet and an outlet and is internally provided with an evaporation source; one end of the carrier gas supply pipeline is communicated with a carrier gas source, the other end of the carrier gas supply pipeline is communicated with the inlet, and after entering the evaporation source device, carrier gas carries evaporation source gas to form process gas; one end of the process gas supply pipeline is communicated with the outlet, and the other end of the process gas supply pipeline is communicated with the reaction cavity; the purging gas pipeline comprises a purging inlet pipeline and a purging outlet pipeline, the purging inlet pipeline is communicated with the carrier gas supply pipeline through a first emptying pipeline, and the purging outlet pipeline is communicated with the process gas supply pipeline through a second emptying pipeline; a first control valve is arranged on the first emptying pipeline; and a second control valve is arranged on the second emptying pipeline. When the evaporation source of the gas transmission device is replaced, the gas pipeline is not easy to pollute, and the proceeding of the subsequent process is not influenced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a gas transmission device, a semiconductor processing device and a working method thereof. Background Art

[0002] like Figure 1 As shown, in the current thin film deposition device 1, one or more substrates 17 are placed flat on a heated substrate holder 16, and the substrate holder 16 forms the bottom of a process chamber 18. A shower head 15 is provided on the top of the process chamber 18, and the shower head 15 is used to transport process gas into the process chamber 18. The shower head 15 is connected to a gas transmission device. The gas transmission device includes: an evaporation device 2, in which a solid or liquid starting material 3 is contained, and a carrier gas is input into the evaporation device 2 through a carrier gas feeding pipeline 6, and two mass flow regulators 10 and 11 with different flow ranges are provided on the carrier gas feeding pipeline 6, and the mass flow regulator 11 can have a larger flow range than the mass flow regulator 10, for example. The mass flow regulator 10 or the mass flow regulator 11 is selected according to the needs. The evaporation device 2 has a heating device to evaporate the solid or liquid starting material 3 to form saturated steam. The carrier gas carries the saturated steam into the shower head 5 to transport process gas into the process chamber 18. The process gas forms a thin film on the surface of the substrate 17.

[0003] The above-mentioned gas transmission device is prone to contamination of the gas pipeline when replacing the evaporation source, thus affecting the subsequent process. Summary of the invention

[0004] The object of the present invention is to provide a gas transmission device, a semiconductor processing device and a working method thereof, which are not likely to cause pollution to the gas pipeline when replacing the evaporation source and do not affect the subsequent process.

[0005] In order to solve the above problems, the present invention is implemented by the following technical solutions:

[0006] A gas transmission device for delivering process gas into a reaction chamber of a semiconductor processing device, comprising: an evaporation source device including an inlet and an outlet, with an evaporation source contained therein; a carrier gas supply pipeline having one end connected to a carrier gas source and the other end connected to the inlet, the carrier gas entering the evaporation source device and carrying saturated evaporation source gas to form process gas; a process gas supply pipeline having one end connected to the outlet and the other end connected to the reaction chamber; a purge gas pipeline including a purge inlet pipeline and a purge outlet pipeline, the purge inlet pipeline being connected to the carrier gas supply pipeline through a first evacuation pipeline, and the purge outlet pipeline being connected to the process gas supply pipeline through a second evacuation pipeline; a first control valve provided on the first evacuation pipeline; and a second control valve provided on the second evacuation pipeline.

[0007] Optionally, the first evacuation pipeline includes a first end and a second end, the first end being connected to the carrier gas supply pipeline and the second end being connected to the purge inlet pipeline; a flow controller and a first pneumatic valve are further sequentially provided between the carrier gas source and the first end along the flow direction of the carrier gas.

[0008] Optionally, the second evacuation pipeline includes a third end and a fourth end, the third end being connected to the process gas supply pipeline and the fourth end being connected to the purge outlet pipeline; a second pneumatic valve and a pressure controller are further provided between the third end and the reaction chamber along the flow direction of the process gas.

[0009] Optionally, a gas pipeline is further provided between the upstream of the first pneumatic valve and the downstream of the second pneumatic valve, and a third pneumatic valve is further provided on the gas pipeline.

[0010] Optionally, a first replacement valve is further provided between the first end and the inlet; a second replacement valve is further provided between the third end and the outlet.

[0011] Optionally, the evaporation source device includes a first evaporation source device and a second evaporation source device, the first evaporation source device includes a first inlet and a first outlet, the second evaporation source device includes a second inlet and a second outlet, the carrier gas supply pipeline is connected to the first inlet, the first outlet and the second inlet are connected through a series channel, a first replacement valve is further provided between the first end and the first inlet, a second replacement valve and a third replacement valve are provided on the series channel, a fourth replacement valve is further provided between the third end and the second outlet, and the first replacement valve and the second replacement valve are used to replace the first evaporation source device, and the third replacement valve and the fourth replacement valve are used to replace the second evaporation source device.

[0012] Optionally, it further includes: a switching channel, which includes opposite ends, one end of the switching channel is communicated with the carrier gas supply pipeline between the first end and the first switching valve, and the other end of the switching channel is communicated with the series channel between the second switching valve and the third switching valve; a switching valve is provided on the switching channel.

[0013] Optionally, it further includes: a third evaporation source device, and the first evaporation source device and the second evaporation source device are connected in series and then connected in parallel with the third evaporation source device.

[0014] Optionally, the purge gas pipeline includes a first purge gas pipeline and a second purge gas pipeline. The first purge gas pipeline includes a first purge inlet pipeline and a first purge outlet pipeline. The first purge inlet pipeline is communicated with the first evacuation pipeline, and the first purge outlet pipeline is communicated with the second evacuation pipeline. The first purge gas pipeline, the first evacuation pipeline, and the second evacuation pipeline are used to discharge the air in the pipelines of the first evaporation source device and the second evaporation source device; the second purge gas pipeline includes a second purge inlet pipeline and a second purge outlet pipeline. The second purge inlet pipeline is communicated with the carrier gas supply pipeline through a third evacuation pipeline, and the second purge outlet pipeline is communicated with the process gas supply pipeline through a fourth evacuation pipeline.

[0015] Optionally, the first purge outlet pipeline is communicated with the second purge inlet pipeline; the semiconductor processing device further includes: a vacuum pump, and the second purge outlet pipeline is communicated with the vacuum pump.

[0016] Optionally, the carrier gas sources of the first evaporation source device and the second evaporation source device are independent of each other from that of the third evaporation source device; the process gas supply pipelines of the first evaporation source device and the second evaporation source device and the process gas supply pipeline of the third evaporation source device are respectively connected to different inlets of the reaction chamber.

[0017] Optionally, the first evaporation source device, the second evaporation source device, and the third evaporation source device share the same carrier gas source; the process gas supply pipelines of the first evaporation source device and the second evaporation source device and the process gas supply pipeline of the third evaporation source device converge and then are connected to the same inlet of the reaction chamber.

[0018] Optionally, it further includes: a dilution carrier gas channel, one end of the dilution carrier gas channel is communicated with a dilution carrier gas source, and the other end of the dilution carrier gas channel is communicated with the process gas supply pipeline, for diluting the process gas output from the evaporation source device to form a diluted process gas; a diluted process channel, one end of which is communicated with the process gas supply pipeline, and the other end is communicated with the reaction chamber.

[0019] Optionally, the process gas supply pipelines of the first evaporation source device and the second evaporation source device are the first process gas supply pipeline, and the process gas supply pipeline of the third evaporation source device is the second process gas supply pipeline; further comprising: a first dilution carrier gas channel and a second dilution carrier gas channel, one end of the first dilution carrier gas channel is connected to a first dilution carrier gas source, and the other end of the first dilution carrier gas channel is connected to the first process gas supply pipeline, for diluting the process gas output from the first evaporation source device and the second evaporation source device to form a first diluted process gas; a first dilution process channel, one end of which is connected to the first process gas supply pipeline, and the other end is connected to the reaction chamber; one end of the second dilution carrier gas channel is connected to a second dilution carrier gas source, and the other end of the second dilution carrier gas channel is connected to the second process gas supply pipeline, for diluting the process gas output from the third evaporation source device to form a second diluted process gas; a second dilution process channel, one end of which is connected to the second process gas supply pipeline, and the other end is connected to the reaction chamber.

[0020] Optionally, the carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source are independent of each other; the first diluted process gas supply pipeline and the second diluted process gas supply pipeline are respectively connected to different inlets of the reaction chamber.

[0021] Optionally, the carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source and the second dilution carrier gas source share the same carrier gas source; after the first diluted process gas supply pipeline and the second diluted process gas supply pipeline converge, they are connected to the same inlet of the reaction chamber.

[0022] On the other hand, the present invention further provides a semiconductor processing device, comprising: a reaction chamber; a pedestal located at the bottom of the reaction chamber for carrying a substrate; a showerhead disposed opposite to the pedestal; and the above-mentioned gas transmission device connected to the showerhead for delivering process gas into the reaction chamber.

[0023] Correspondingly, the present invention further provides a working method of a semiconductor processing device, comprising: providing the above-mentioned semiconductor processing device; opening the first control valve to evacuate the gas in the carrier gas supply pipeline; opening the second control valve to evacuate the gas in the process gas supply pipeline.

[0024] Optionally, the first evacuation pipeline includes a first end and a second end. The first end is in communication with the carrier gas supply pipeline, and the second end is in communication with the purge inlet pipeline. A first pneumatic valve is further sequentially arranged between the carrier gas source and the first end along the flow direction of the carrier gas. The second evacuation pipeline includes a third end and a fourth end. The third end is in communication with the process gas supply pipeline, and the fourth end is in communication with the purge outlet pipeline. A second pneumatic valve is further arranged between the third end and the reaction chamber along the flow direction of the process gas. The working method of the semiconductor processing device further includes: when a process is being carried out in the reaction chamber, closing the first control valve and the second control valve, and opening the first pneumatic valve and the second pneumatic valve.

[0025] Optionally, a first replacement valve is further arranged between the first end and the inlet; a second replacement valve is further arranged between the third end and the outlet; before opening the first control valve and the second control valve, it further includes: closing the first control valve, the second control valve, the first pneumatic valve and the second pneumatic valve, and disassembling the evaporation source device through the first replacement valve and the second replacement valve.

[0026] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0027] In a gas transmission device provided by the present invention, a purge gas pipeline is additionally provided. The purge gas pipeline includes a purge inlet pipeline and a purge outlet pipeline. The purge inlet pipeline is in communication with the carrier gas supply pipeline through a first evacuation pipeline, and the purge outlet pipeline is in communication with the process gas supply pipeline through a second evacuation pipeline. By opening the first control valve on the first exhaust pipeline, it is beneficial to discharge the gas in the carrier gas supply pipeline. By opening the second control valve on the second exhaust pipeline, it is beneficial to discharge the gas in the process gas supply pipeline. This is beneficial to avoiding the adverse effects on subsequent processes caused by the residual unwanted gas in the carrier gas supply pipeline and the process gas supply pipeline. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic structural diagram of a thin film deposition device;

[0029] Figure 2 is a schematic structural diagram of a semiconductor processing device according to the present invention;

[0030] Figure 3 is Figure 2 a schematic structural diagram of the gas transmission device in

[0031] Figure 4 is a schematic structural diagram of another gas transmission device according to the present invention;

[0032] Figure 5Schematic structural diagram of another semiconductor processing device of the present invention;

[0033] Figure 6 Schematic structural diagram of yet another semiconductor processing device of the present invention;

[0034] Figure 7 Schematic structural diagram of yet another semiconductor processing device of the present invention;

[0035] Figure 8 Schematic structural diagram of another gas transmission device of the present invention;

[0036] Figure 9 Schematic structural diagram of yet another semiconductor processing device of the present invention;

[0037] Figure 10 Schematic structural diagram of yet another semiconductor processing device of the present invention;

[0038] Figure 11 Flowchart of the working method of a semiconductor processing device of the present invention. Detailed implementation manners

[0039] The following further details a gas transmission device and a semiconductor processing device proposed by the present invention in conjunction with the accompanying drawings and specific implementation manners. The advantages and features of the present invention will be clearer according to the following description. It should be noted that the accompanying drawings are in a very simplified form and all use non-precise scales, only for the purpose of facilitating and clearly assisting in explaining the embodiments of the present invention. In order to make the purpose, features, and advantages of the present invention more obvious and understandable, please refer to the accompanying drawings. It should be known that the structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Therefore, they do not have technical essential significance. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed by the present invention.

[0040] The present invention provides a gas transmission device, a semiconductor processing device and a working method thereof. Among them, the gas transmission device is provided with a purge gas pipeline, which includes a purge inlet pipeline and a purge outlet pipeline. The purge inlet pipeline is communicated with the carrier gas supply pipeline through a first evacuation pipeline, and the purge outlet pipeline is communicated with the process gas supply pipeline through a second evacuation pipeline. When the evaporation source device is replaced, air entering the carrier gas supply pipeline and the process gas supply pipeline through the first evacuation pipeline and the second evacuation pipeline respectively can prevent water and oxygen residues in the air from contacting the MO source during subsequent use of the gas transmission device, thus avoiding adverse consequences such as explosion or reaction caused by the contact of water and oxygen with the MO source.

[0041] The detailed description is as follows:

[0042] As Figure 2 shown, the semiconductor processing device includes: a reaction chamber 100; a susceptor 102 located inside the reaction chamber 100 for carrying a substrate; a showerhead 101 disposed at the top of the reaction chamber 100 and opposite to the susceptor 102, and the showerhead 101 is connected to a gas transmission device for supplying process gas into the reaction chamber 100.

[0043] A thin film deposition process is carried out inside the reaction chamber 100. Correspondingly, the semiconductor processing device is a thin film deposition device, such as a metal organic chemical vapor deposition device.

[0044] Please refer to Figure 2 and Figure 3 , the gas transmission device includes: an evaporation source device 108, which includes an inlet A and an outlet B and contains evaporation source liquid therein; a carrier gas supply pipeline 104, one end of which is connected to a carrier gas source (not shown in the figure) and the other end is connected to the inlet A, and the carrier gas provided by the carrier gas source enters the evaporation source device 108 and carries evaporation source gas to form process gas; a process gas supply pipeline 107, one end of which is connected to the outlet B and the other end is connected to the reaction chamber 100; a purge gas pipeline 106, which includes a purge inlet pipeline 106a and a purge outlet pipeline 106b. The purge inlet pipeline 106a is communicated with the carrier gas supply pipeline 104 through a first evacuation pipeline 105, and the purge outlet pipeline 106b is communicated with the process gas supply pipeline 107 through a second evacuation pipeline 117 (see Figure 3 ); a first control valve 111 is arranged on the first evacuation pipeline 105; a second control valve 114 is arranged on the second evacuation pipeline 117.

[0045] The first evacuation pipe 105 includes a first end C and a second end D. The first end C is in communication with the carrier gas supply pipe 104, and the second end D is in communication with the purge inlet pipe 106a. A flow controller 108 and a first pneumatic valve 110 are sequentially arranged between the carrier gas source and the first end C along the flow direction of the carrier gas.

[0046] The second evacuation pipe 117 includes a third end E and a fourth end F. The third end E is in communication with the process gas supply pipe 107, and the fourth end F is in communication with the purge outlet pipe 106b. A second pneumatic valve 112 and a pressure controller 109 are arranged between the third end E and the reaction chamber 100 along the flow direction of the process gas.

[0047] A gas pipe 120 is arranged between the upstream of the first pneumatic valve 110 and the downstream of the second pneumatic valve 112, and a third pneumatic valve 113 is also arranged on the gas pipe 120. The upstream of the first pneumatic valve 110 is defined according to the flow direction of the carrier gas. Specifically, the upstream of the first pneumatic valve 110 refers to the carrier gas supply pipe 104 between the flow controller 108 and the first pneumatic valve 110. The downstream of the second pneumatic valve 112 is defined according to the flow direction of the process gas. Specifically, the downstream of the second pneumatic valve 112 refers to the process gas supply pipe 107 between the second pneumatic valve 112 and the pressure controller 109.

[0048] When process treatment is required in the reaction chamber 100, the first pneumatic valve 110 and the second pneumatic valve 112 are opened, and the third pneumatic valve 113, the first control valve 111, and the second control valve 114 are closed. In this way, the carrier gas enters the evaporation source device 108 from the carrier gas source through the carrier gas supply channel 104 and the first pneumatic valve 110. The evaporation source device 108 has a constant temperature water bath. The constant temperature water bath can maintain a stable temperature, such as 25°C, 5°C, etc., as required for the water temperature, and can heat the evaporation source liquid contained in the evaporation source device 108 to form saturated vapor. The carrier gas carries the saturated vapor to form process gas, and the process gas enters the reaction chamber 100 after passing through the second pneumatic valve 112 and the pressure controller 109 in sequence to form a thin film on the surface of the substrate.

[0049] Whether or not a process is being performed in the reaction chamber 100, the carrier gas source is in an operating state. When no process is being performed in the reaction chamber 100, the first pneumatic valve 110 and the second pneumatic valve 112 are closed, and the third pneumatic valve 113 is opened, so that the carrier gas enters the reaction chamber 100 through the third pneumatic valve 113. The semiconductor processing apparatus further includes: a vacuum pump 103, which is connected to the reaction chamber 100 and is used to control the pressure in the reaction chamber 100. When no process is being performed in the reaction chamber 100, the carrier gas entering the reaction chamber 100 is evacuated by the vacuum pump 103.

[0050] For different processes, different evaporation sources are required, or when the evaporation source does not meet the process requirements, in these cases, the evaporation source device 108 needs to be replaced. To facilitate the replacement of the evaporation source device 108, a first replacement valve 115 is further provided between the first end C and the inlet A; a second replacement valve 116 is further provided between the third end E and the outlet B. By disassembling the first replacement valve 115 and the second replacement valve 116, the replacement of the evaporation source device 108 is achieved.

[0051] However, when disassembling the first replacement valve 115 and the second replacement valve 116, air is likely to enter the carrier gas supply pipe 104 and the process gas supply pipe 107. If the air in the carrier gas supply pipe 104 is not evacuated, during the next process, this air will enter the evaporation source device 108 along with the carrier gas. The gas in the evaporation source device 108 is a MO source gas, such as: TMGa (trimethylgallium), TMAl (trimethylaluminum), TEGa (triethylgallium), Cp2Mg (P-type dopant), or TMIn (trimethylindium). The MO source gas is likely to explode or react when it encounters air. And the air entering the process gas supply pipe 107 will enter the reaction chamber 100 along with the process gas, which is likely to affect the environment in the reaction chamber 100.

[0052] To avoid the above problems, before the next process is performed in the reaction chamber 100, the air entering the carrier gas supply pipe 104 and the process gas supply pipe 107 is discharged through the first evacuation pipe 105 and the second evacuation pipe 117 respectively. Specifically, the first pneumatic valve 110 and the second pneumatic valve 112 are closed, the pneumatic valve 113, the first control valve 115, and the second control valve 116 are opened, so that the purge gas in the purge inlet pipe 106a can purge the air in the carrier gas supply pipe 104, and the purge gas in the purge outlet pipe 106b can purge the air in the process gas supply pipe 117. In this way, when the process gas is subsequently transported into the reaction chamber 100, the above problems will not occur.

[0053] In this embodiment, the number of the evaporation source devices 108 is 1.

[0054] Figure 4 This is a schematic structural diagram of another gas transmission device of the present invention.

[0055] Please refer to Figure 4 , the carrier gas supply pipeline 104, the flow controller 108, the first pneumatic valve 110, the second pneumatic valve 112, the third pneumatic valve 113, the pressure controller 109 and the process gas supply pipeline 107 are the same as those in the gas transmission device in Figure 3 and will not be elaborated here.

[0056] In this embodiment, there are two evaporation source devices, namely the first evaporation source device 108 and the second evaporation source device 130. The first evaporation source device 108 includes a first inlet A and a first outlet B. The second evaporation source device 130 includes a second inlet G and a second outlet I. The carrier gas supply pipeline 104 is communicated with the first inlet A. A series channel 121 is provided between the first outlet B and the second inlet G. A first replacement valve 115 is further provided between the first end C and the first inlet A. A second replacement valve 123 and a third replacement valve 124 are provided on the series channel 121. A fourth replacement valve 122 is further provided between the third end E and the second outlet I. The first replacement valve 115 and the second replacement valve 123 are used to replace the first evaporation source device 108, and the third replacement valve 124 and the fourth replacement valve 122 are used to replace the second evaporation source device 130.

[0057] The gas transmission device further includes: a switching channel 190. One end of the switching channel 190 is communicated with the carrier gas supply pipeline 104 between the first end C and the first switching valve 115, and the other end of the switching channel 190 is communicated with the series channel between the second switching valve 123 and the third switching valve 124. A switching valve 121 is provided on the switching channel 190.

[0058] When process treatment needs to be carried out in the reaction chamber, and the evaporation source liquids in both the first evaporation source device 108 and the second evaporation source device 130 have not been exhausted, and both the first evaporation source device 108 and the second evaporation source device 130 need to be used, close the third pneumatic valve 113, the first control valve 111, the second control valve 114 and the switching valve 121, and open the first pneumatic valve 110, the first replacement valve 115, the second replacement valve 123, the third replacement valve 124, the fourth replacement valve 122 and the second pneumatic valve 112, so that the carrier gas enters the first evaporation source device 108 from the carrier gas supply pipeline 104, and then forms process gas after passing through the second evaporation source device 130. The process gas is transported into the reaction chamber 100 through the process gas supply pipeline 107.

[0059] When the evaporation source in the first evaporation source device 108 is exhausted while there is still remaining evaporation source in the second evaporation source device 130, the third pneumatic valve 113, the first control valve 111, the second control valve 114, the first replacement valve 115, and the second replacement valve 123 are closed, and the first pneumatic valve 110, the switching valve 121, the third replacement valve 124, the fourth replacement valve 122, and the second pneumatic valve 122 are opened, so that the carrier gas flows from the carrier gas source, successively passes through the first pneumatic valve 110, the switching pipeline 120, the series pipeline 121, and the third replacement valve 124 and enters the second evaporation source device 130, and the formed process gas is transported to the reaction chamber for process treatment.

[0060] It should be noted that when the first evaporation source device 108 is exhausted while there is still remaining evaporation source in the second evaporation source device 130, if the first evaporation source device 130 can still meet the process requirements, the first evaporation source device 108 can be temporarily retained without replacement.

[0061] When all the evaporation source liquids in the first evaporation source device 108 and the second evaporation source device 130 are exhausted, the first evaporation source device 108 and the second evaporation source device 130 are replaced by disassembling the first replacement valve 115, the second replacement valve 123, the third replacement valve 124, and the fourth replacement valve 122.

[0062] When the first evaporation source device 108 and the second evaporation source device 130 are disassembled, air is likely to enter the carrier gas supply pipeline, the series pipeline 120, and the process gas supply pipeline 107. To reduce the adverse effects of this air on subsequent supplies, before the next process, the first pneumatic valve 110, the second pneumatic valve 112, the first replacement valve 115, the second replacement valve 123, the third replacement valve 124, and the fourth replacement valve 122 are closed, and the third pneumatic valve 113, the first control valve 111, the second control valve 114, and the switching valve 121 are opened, so that the air in the carrier gas supply pipeline 104 and the series pipeline 120 is emptied by the purge inlet pipeline 106a, and the air in the process supply pipeline 107 is emptied by the purge outlet pipeline 106b. Therefore, the adverse effects brought by the air introduced when replacing the first evaporation source device 108 and the second evaporation source device 130 can be avoided.

[0063] Figure 5 This is a structural schematic diagram of another semiconductor processing device of the present invention.

[0064] In this embodiment, the evaporation source device includes a first evaporation source device 108a, a second evaporation source device 130, and a third evaporation source device 108b. Among them, the first evaporation source device 108a and the second evaporation source device 130 are connected in series through a series channel, and after the first evaporation source device 108a and the second evaporation source device 130 are connected in series, they are connected in parallel with the third evaporation source device 108b.

[0065] When the first evaporation source device 108a, the second evaporation source device 130, and the third evaporation source device 108b need to be replaced, air is likely to enter the pipeline. The pipeline where air enters is similar to that in the above embodiment and will not be elaborated here. In order to evacuate the air in the pipeline, the first evaporation source device 108a and the second evaporation source device 130 are provided with a first purge gas pipeline. The first purge inlet pipeline 106a of the first purge gas pipeline is connected to the first evacuation pipeline 105a, and the first purge outlet pipeline 106b of the first purge gas pipeline is connected to the second evacuation pipeline 117a, for discharging the air in the pipelines of the first evaporation source device 108a and the second evaporation source device 130. The third evaporation source device 108b is provided with a second purge gas pipeline. The second purge inlet pipeline 106c of the second purge gas pipeline is connected to the third evacuation pipeline 105b, and the second purge outlet pipeline 106d of the second purge gas pipeline is connected to the fourth evacuation pipeline 117b, for discharging the air in the pipeline of the evaporation source device 108b.

[0066] The first purge outlet pipeline 106b is connected to the second purge inlet pipeline 106c, and the second purge outlet pipeline 106d is connected to the vacuum pump 103, for discharging the air in the pipeline.

[0067] In this embodiment, the carrier gas supply pipelines 104a of the first evaporation source device 108a and the second evaporation source device 130 are independent of each other from the carrier gas supply pipeline 104b of the third evaporation source device 108a; the process gas supply pipelines 107a of the first evaporation source device 108a and the second evaporation source device 130 are independent of each other from the process gas supply pipeline 107b of the third evaporation source device 108b, and are respectively connected to different inlets of the shower head 101 to respectively supply process gas into the reaction chamber 100 to form a thin film on the surface of the substrate 102.

[0068] Figure 6 It is a schematic structural diagram of another semiconductor processing device of the present invention.

[0069] Figure 6 What is the same as the Figure 5 illustrated embodiment is that: the evaporation source device 108a and the evaporation source device 130 are connected in series through a series channel, and after the evaporation source device 108a and the evaporation source device 130 are connected in series, they are connected in parallel with the evaporation source device 108b.

[0070] Figure 6 The illustrated embodiment and Figure 5 differ in that: Figure 5 In the embodiment, the carrier gas supply pipelines 104a and 104b are respectively connected to different carrier gas sources, and the process gas supply pipelines 107a and 107b are respectively connected to different inlets of the showerhead 101, while Figure 6 In the embodiment, the carrier gas supply pipelines 104a and 104b are connected to the same carrier gas source, and are branched from the carrier gas source into two branches respectively communicating with the carrier gas supply pipelines 104a and 104b. And after the process gas supply pipelines 107a and 107b converge, they are connected to the same inlet of the showerhead 101.

[0071] In the above embodiment, the concentration of the process gas coming out of the evaporation source device is relatively high and is suitable for the process gas with a high concentration required in the reaction chamber 100. When a process gas with a low concentration is required in the reaction chamber 100, it can be achieved through the following design:

[0072] Figure 7 It is a schematic structural diagram of another semiconductor processing device of the present invention.

[0073] Figure 7 The carrier gas supply pipeline 104, the evaporation source device 108 and the process supply pipeline 107 in the gas transmission device in Figure 2 are the same as those in the illustrated embodiment and will not be elaborated here.

[0074] In this embodiment, the carrier gas is transported from the carrier gas source to the evaporation source device 108 through the carrier gas supply pipeline 104 to form a mixed gas of saturated evaporation source gas and carrier gas, that is, to form a process gas. The process gas is transported to the showerhead 101 to form a thin film on the surface of the substrate on the pedestal 102 in the reaction chamber 100.

[0075] Since the concentration of the MO source gas in the process gas formed after the carrier gas passes through the evaporation source device 108 is relatively high, while the concentration of the MO source gas required in the reaction chamber 100 is relatively low, therefore, in this embodiment, the gas transmission device further includes: a dilution carrier gas channel 130, one end of the dilution carrier gas channel 130 is communicated with a dilution carrier gas source, and the other end of the dilution carrier gas channel 130 is communicated with the process gas supply pipeline 107; a dilution process channel 131, one end of the dilution process channel 131 is communicated with the process gas supply pipeline 107, and the other end is communicated with the showerhead 101. The process gas in the process gas supply pipeline 107 is diluted by the carrier gas in the dilution carrier gas channel 130, so that the concentration of the process gas in the dilution process channel 131 is relatively low to meet the requirement of the concentration of the process gas in the reaction chamber 100.

[0076] Figure 8 This is a schematic structural diagram of another semiconductor processing device of the present invention.

[0077] Figure 8 There are two evaporation source devices in [reference], and the purge gas pipeline, the first evacuation pipeline, the second evacuation pipeline, the carrier gas supply pipeline 104, and the process gas supply pipeline 107 are the same as those in Figure 4 in [reference] and will not be elaborated here.

[0078] Since the concentration of the MO source gas in the process gas supply pipeline 107 is relatively high, while the required concentration of the MO source gas in the reaction chamber is relatively low, therefore, by adding a dilution carrier gas channel 230, one end of the dilution carrier gas channel 230 is connected to a dilution carrier gas source, and the other end of the dilution carrier gas channel 230 is connected to the process gas supply pipeline 107; one end of the dilution process channel 231 is connected to the process gas supply pipeline 107, and the other end is connected to the shower head. The process gas in the process gas supply pipeline 107 is diluted by the carrier gas in the dilution carrier gas channel 230, so that the concentration of the process gas in the dilution process channel 231 is relatively low to meet the requirements of the process gas concentration in the reaction chamber.

[0079] Figure 9 This is a schematic structural diagram of another semiconductor processing device of the present invention.

[0080] Figure 9 In [reference], the evaporation source device 108a and the evaporation source device 130 are connected in series through a series channel, and after the evaporation source device 108a and the evaporation source device 130 are connected in series, they are connected in parallel with the evaporation source device 108b.

[0081] In this embodiment, the carrier gas supply pipeline 104a and the carrier gas supply pipeline 104b share a carrier gas source, and Figure 6 similarly included are: the process gas supply pipelines 107a and 107b converge and then are input into the reaction chamber 100, and the purge gas pipeline, the first exhaust pipeline, and the second exhaust pipeline are the same as those in Figure 6 in [reference] and will not be elaborated here.

[0082] The gas transmission device further includes: a first dilution carrier gas pipeline 330a and a second dilution carrier gas pipeline 330b. The first dilution carrier gas pipeline 330a is used to dilute the process gas in the process gas supply pipeline 107a, and the second dilution carrier gas pipeline 330b is used to dilute the process gas in the process gas supply pipeline 107b.

[0083] In this embodiment, the first dilution carrier gas pipeline 330a, the second dilution carrier gas pipeline 330b, the carrier gas supply pipeline 104a, and the carrier gas supply pipeline 104b share a carrier gas source.

[0084] One end of the first dilution carrier gas channel 330a is connected to a dilution carrier gas source, and the other end of the first dilution carrier gas channel 330a is connected to the process gas supply pipe 107a; one end of the first dilution process channel 331a is connected to the process gas supply pipe 107a, and the carrier gas in the first dilution carrier gas channel 330a dilutes the process gas in the process gas supply pipe 107a, so that the concentration of the process gas in the first dilution process channel 331a is relatively low. One end of the second dilution carrier gas channel 330b is connected to a dilution carrier gas source, and the other end of the second dilution carrier gas channel 330b is connected to the process gas supply pipe 107b; one end of the second dilution process channel 331b is connected to the process gas supply pipe 107b, and the carrier gas in the second dilution carrier gas channel 330b dilutes the process gas in the process gas supply pipe 107b, so that the concentration of the process gas in the second dilution process channel 331b is relatively low. The first dilution process channel 331a and the second dilution process channel 331b merge and then enter the reaction chamber 100 to meet the requirement of low concentration of process gas in the reaction chamber 100.

[0085] Figure 10 It is a schematic structural diagram of another semiconductor processing device of the present invention.

[0086] Figure 10 The illustrated embodiment is similar to Figure 9 the illustrated embodiment, and the differences include: the first dilution carrier gas pipe 430a, the second dilution carrier gas pipe 430b, the carrier gas supply pipe 104a and the carrier gas supply pipe 104b use different carrier gas sources respectively.

[0087] The first dilution carrier gas pipe 430a is used to dilute the process gas in the process gas supply pipe 107a, and the diluted process gas enters the reaction chamber 100 through the dilution process pipe 431a. The second dilution carrier gas pipe 430b is used to dilute the process gas in the process gas supply pipe 107b, and the diluted process gas enters the reaction chamber 100 through the dilution process pipe 431b, and the dilution process pipe 431a and the dilution process pipe 431b enter different inlets of the shower head 101 respectively. The diluted process gas is transported into the reaction chamber 100, and a thin film is formed on the surface of the substrate on the base 102.

[0088] Correspondingly, the present invention also provides a working method of a semiconductor processing device. Please refer to Figure 11 , step S1: Provide the above semiconductor processing device; step S2: Open the first control valve to evacuate the gas in the carrier gas supply pipe; open the second control valve to evacuate the gas in the process gas supply pipe.

[0089] The first evacuation pipeline includes a first end and a second end. The first end is communicated with the carrier gas supply pipeline, and the second end is communicated with the purge inlet pipeline. A first pneumatic valve is further sequentially arranged between the carrier gas source and the first end along the flowing direction of the carrier gas. The second evacuation pipeline includes a third end and a fourth end. The third end is communicated with the process gas supply pipeline, and the fourth end is communicated with the purge outlet pipeline. A second pneumatic valve is further arranged between the third end and the reaction chamber along the flowing direction of the process gas. The working method of the semiconductor processing device further includes: when a process is carried out in the reaction chamber, closing the first control valve and the second control valve, and opening the first pneumatic valve and the second pneumatic valve, so that the carrier gas enters the evaporation source device through the carrier gas supply pipeline to form saturated evaporation source steam and the carrier gas, that is, to form a process gas. The process gas is transported to the reaction chamber through the process gas supply pipeline to form a thin film on the surface of the substrate.

[0090] A first replacement valve is further arranged between the first end and the inlet; a second replacement valve is further arranged between the third end and the outlet; when the evaporation source device is used up or needs to be replaced for other reasons, closing the first control valve, the second control valve, the first pneumatic valve and the second pneumatic valve, and disassembling the evaporation source device through the first replacement valve and the second replacement valve. During the process of disassembling the evaporation source device, air is likely to enter the carrier gas supply pipeline and the process gas pipeline. If it is not cleaned before the next process, the air in the carrier gas supply pipeline will subsequently enter the evaporation source device along with the carrier gas to contact the evaporation source gas. It is easy for the air to explode or react when contacting the evaporation source gas, and the air in the process gas supply pipeline will enter the reaction chamber along with the process gas, having an adverse impact on the process environment in the reaction chamber. In order to avoid these adverse impacts, by opening the first control valve on the first exhaust pipeline, it is beneficial to discharge the gas in the carrier gas supply pipeline. By opening the second control valve on the second exhaust pipeline, it is beneficial to discharge the gas in the process gas supply pipeline. This is beneficial to avoid the adverse impact on the subsequent process caused by the residual unwanted gas in the carrier gas supply pipeline and the process gas supply pipeline.

[0091] It should be noted that in this text, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements not only includes those elements but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the phrase "comprising a..." does not exclude the presence of additional identical elements in the process, method, article or device comprising said element.

[0092] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present invention. In the description of the present invention, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0093] In the description of the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "coupled", "fixed" shall be construed broadly. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0094] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but in contact through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the first feature has a lower horizontal height than the second feature.

[0095] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and alternatives to the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A gas transfer device for delivering a process gas into a reaction chamber of a semiconductor processing device, characterized in that, Comprising: An evaporation source device, which includes an inlet and an outlet and contains an evaporation source therein; A carrier gas supply pipeline, one end of which is connected to a carrier gas source and the other end is connected to the inlet. After the carrier gas enters the evaporation source device, it carries a saturated evaporation source gas to form a process gas; A process gas supply pipeline, one end of which is connected to the outlet and the other end is connected to a reaction chamber; A purge gas pipeline, which includes a purge inlet pipeline and a purge outlet pipeline. The purge inlet pipeline is connected to the carrier gas supply pipeline through a first evacuation pipeline, and the purge outlet pipeline is connected to the process gas supply pipeline through a second evacuation pipeline; A first control valve is provided on the first evacuation pipeline; A second control valve is provided on the second evacuation pipeline.

2. The gas transmission device according to claim 1, wherein, The first evacuation pipeline includes a first end and a second end. The first end is connected to the carrier gas supply pipeline, and the second end is connected to the purge inlet pipeline. A flow controller and a first pneumatic valve are sequentially arranged between the carrier gas source and the first end along the flow direction of the carrier gas.

3. The gas transmission device according to claim 2, wherein The second evacuation pipeline includes a third end and a fourth end. The third end is connected to the process gas supply pipeline, and the fourth end is connected to the purge outlet pipeline. A second pneumatic valve and a pressure controller are arranged between the third end and the reaction chamber along the flow direction of the process gas.

4. The gas transmission device according to claim 3, characterized in that, A gas pipeline is further arranged between the upstream of the first pneumatic valve and the downstream of the second pneumatic valve, and a third pneumatic valve is also provided on the gas pipeline.

5. The gas transmission device according to claim 3, characterized in that, A first replacement valve is further arranged between the first end and the inlet; a second replacement valve is further arranged between the third end and the outlet.

6. The gas transmission device according to claim 3, wherein, The evaporation source device includes a first evaporation source device and a second evaporation source device. The first evaporation source device includes a first inlet and a first outlet, and the second evaporation source device includes a second inlet and a second outlet. The carrier gas supply pipeline is connected to the first inlet, and the first outlet and the second inlet are connected through a series channel. A first replacement valve is further arranged between the first end and the first inlet. A second replacement valve and a third replacement valve are provided on the series channel. A fourth replacement valve is further arranged between the third end and the second outlet. The first replacement valve and the second replacement valve are used to replace the first evaporation source device, and the third replacement valve and the fourth replacement valve are used to replace the second evaporation source device.

7. The gas transmission device according to claim 6, wherein Further comprising: A switching channel, which includes opposite ends. One end of the switching channel is connected to the carrier gas supply pipeline between the first end and the first switching valve, and the other end of the switching channel is connected to the series channel between the second switching valve and the third switching valve. A switching valve is provided on the switching channel.

8. The gas transmission device according to claim 7, wherein, Further comprising: A third evaporation source device, and the first evaporation source device and the second evaporation source device are connected in series and then connected in parallel with the third evaporation source device.

9. The gas transmission device according to claim 8, characterized in that, The purge gas pipeline includes a first purge gas pipeline and a second purge gas pipeline. The first purge gas pipeline includes a first purge inlet pipeline and a first purge outlet pipeline. The first purge inlet pipeline is communicated with a first evacuation pipeline, and the first purge outlet pipeline is communicated with a second evacuation pipeline. The first purge gas pipeline, the first evacuation pipeline and the second evacuation pipeline are used to discharge the air in the pipelines of the first evaporation source device and the second evaporation source device; The second purge gas pipeline includes a second purge inlet pipeline and a second purge outlet pipeline. The second purge inlet pipeline is communicated with the carrier gas supply pipeline through a third evacuation pipeline, and the second purge outlet pipeline is communicated with the process gas supply pipeline through a fourth evacuation pipeline.

10. The gas transmission device according to claim 9, characterized in that, The first purge outlet pipeline is communicated with the second purge inlet pipeline; The semiconductor processing device further includes: a vacuum pump, and the second purge outlet pipeline is communicated with the vacuum pump.

11. The gas transmission device according to claim 10, wherein, The carrier gas sources of the first evaporation source device and the second evaporation source device are independent of each other; The process gas supply pipelines of the first evaporation source device and the second evaporation source device are respectively connected to different inlets of the reaction chamber.

12. The gas transmission device according to claim 10, wherein The first evaporation source device, the second evaporation source device and the third evaporation source device share the same carrier gas source; The process gas supply pipelines of the first evaporation source device and the second evaporation source device are joined together and then connected to the same inlet of the reaction chamber.

13. The gas transmission device according to claim 1 or 6, wherein It further includes: A dilution carrier gas channel, one end of which is communicated with a dilution carrier gas source, and the other end of which is communicated with the process gas supply pipeline, for diluting the process gas output from the evaporation source device to form a diluted process gas; A diluted process channel, one end of which is communicated with the process gas supply pipeline, and the other end of which is communicated with the reaction chamber.

14. The gas transmission device according to claim 10, wherein, The process gas supply pipelines of the first evaporation source device and the second evaporation source device are the first process gas supply pipelines, and the process gas supply pipeline of the third evaporation source device is the second process gas supply pipeline; It further includes: a first dilution carrier gas channel and a second dilution carrier gas channel. One end of the first dilution carrier gas channel is communicated with a first dilution carrier gas source, and the other end of the first dilution carrier gas channel is communicated with the first process gas supply pipeline, for diluting the process gas output from the first evaporation source device and the second evaporation source device to form a first diluted process gas; A first diluted process channel, one end of which is communicated with the first process gas supply pipeline, and the other end of which is communicated with the reaction chamber; One end of the second dilution carrier gas channel is communicated with a second dilution carrier gas source, and the other end of the second dilution carrier gas channel is communicated with the second process gas supply pipeline, for diluting the process gas output from the third evaporation source device to form a second diluted process gas; A second diluted process channel, one end of which is communicated with the second process gas supply pipeline, and the other end of which is communicated with the reaction chamber.

15. The gas transmission device according to claim 14, characterized in that, The carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source, and the second dilution carrier gas source are independent of each other; the first dilution process gas supply pipe and the second dilution process gas supply pipe are respectively connected to different inlets of the reaction chamber.

16. The gas transmission device according to claim 14, wherein The carrier gas sources of the first evaporation source device and the second evaporation source device, the carrier gas source of the third evaporation source device, the first dilution carrier gas source, and the second dilution carrier gas source share the same carrier gas source; the first dilution process gas supply pipe and the second dilution process gas supply pipe converge and are then connected to the same inlet of the reaction chamber.

17. A semiconductor processing apparatus, characterized in that, Comprising: A reaction chamber; A susceptor located at the bottom of the reaction chamber for carrying a substrate; A showerhead disposed opposite to the susceptor; The gas transfer device according to any one of claims 1 to 16, connected to the showerhead for delivering process gas into the reaction chamber.

18. A working method of a semiconductor processing device, characterized in that, Comprising: Providing the semiconductor processing device as claimed in claim 17; Opening the first control valve to evacuate the gas in the carrier gas supply pipe; opening the second control valve to evacuate the gas in the process gas supply pipe.

19. The working method of the semiconductor processing device according to claim 18, characterized in that, The first evacuation pipe includes a first end and a second end. The first end is communicated with the carrier gas supply pipe, and the second end is communicated with the purge inlet pipe; a first pneumatic valve is further sequentially arranged between the carrier gas source and the first end along the flow direction of the carrier gas; the second evacuation pipe includes a third end and a fourth end. The third end is communicated with the process gas supply pipe, and the fourth end is communicated with the purge outlet pipe; a second pneumatic valve is further arranged between the third end and the reaction chamber along the flow direction of the process gas; the working method of the semiconductor processing device further includes: when a process is being carried out in the reaction chamber, closing the first control valve and the second control valve, and opening the first pneumatic valve and the second pneumatic valve.

20. The working method of the semiconductor processing device according to claim 19, characterized in that, A first replacement valve is further arranged between the first end and the inlet; a second replacement valve is further arranged between the third end and the outlet; before opening the first control valve and the second control valve, it further includes: closing the first control valve, the second control valve, the first pneumatic valve and the second pneumatic valve, and disassembling the evaporation source device through the first replacement valve and the second replacement valve.

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