Laser diode component and method for producing laser diode component

Abstract

A laser diode component (1) is described, comprising:-a semiconductor layer stack (2) comprising:-a first semiconductor region (3),-a second semiconductor region (5) and-an active region (4), where the first semiconductor region (3) has a protruding region (30), where the first semiconductor region (3) protrudes laterally beyond the active region (4) and the second semiconductor region (5),-a dielectric layer (11) covering the semiconductor layer stack (2), -a first contact device (18) for electrically contacting the first semiconductor region (3), comprising:-a first contact layer (91) covering the protruding region (30) of the first semiconductor region (3), and-a first contact post (161),-a second contact device (19) for electrically contacting the second semiconductor region (5), comprising:-a second contact post (162) covering the protruding region (30) of the first semiconductor region (3), wherein the first contact region (161A) of the first contact post (161) laterally surrounds the second contact region (162A) of the second contact post (162). Furthermore, a method for manufacturing a laser diode component is described.

Description

Technical Field

[0001] The present invention details a laser diode component and a method for manufacturing a laser diode component. For example, the laser diode component is a thin-film VCSEL (Vertical-Cavity Surface-Emitting Laser). Background Art

[0002] For example, there are known ultraviolet radiation-emitting thin-film VCSELs that include a semiconductor layer stack between two dielectric distributed Bragg reflectors and are optically pumped. Although optically pumped thin-film VCSELs may have relatively large component sizes, electrically pumped VCSELs must deal with, for example, thermomechanical stresses due to the contact schemes provided for electrically contacting the VCSELs. Summary of the Invention

[0003] An object of the present invention is to specify a laser diode component that provides improved reliability. This object is achieved in particular by the laser diode component according to the independent claims. Other embodiments and other improvements of the laser diode component are the subject of the dependent claims.

[0004] Another object of the present invention is to specify a method for manufacturing a laser diode component that enables higher manufacturing yields. This object is achieved in particular by the method according to the independent claims. Other embodiments and other improvements of the method for manufacturing a laser diode component are the subject of the dependent claims.

[0005] According to at least one embodiment of the laser diode component, it includes a semiconductor layer stack that includes a first semiconductor region, which may be of a first conductivity type, for example an n-doped semiconductor region; includes a second semiconductor region, which may be of a second conductivity type, for example a p-doped semiconductor region, and includes an active region for emitting laser radiation, wherein the active region is arranged between the first semiconductor region and the second semiconductor region. For example, the laser diode component is suitable for emitting laser radiation having a wavelength in the ultraviolet to blue spectral range.

[0006] The active region may include a sequence of monolayers forming a quantum well structure, in particular a single quantum well (SQW) structure or a multiple quantum well (MQW) structure. In addition, the first and second semiconductor regions may each have a sequence of monolayers, some of which may be undoped or lightly doped.

[0007] The monolayers of the semiconductor regions may be epitaxially deposited on a growth substrate.

[0008] For example, materials based on arsenide, phosphide, or nitride compound semiconductors are suitable for the monolayers of the semiconductor regions or the semiconductor layer stack. In the present invention, "based on arsenide, phosphide, or nitride compound semiconductors" means that the semiconductor layer includes Aln Ga m In 1-n-m As, Al n Ga m In l-n-m P or Al n Ga m In 1-n-m N, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. The material does not necessarily have to have a mathematically exact composition according to the above formula. Instead, it can have one or more dopants and additional components that substantially do not change the characteristic physical properties of the Al n Ga m In 1-n-m As, Al n Ga m In 1-n-m P or Al n Ga m In 1-n-m N material. However, for simplicity, the above formula only includes the basic components of the lattice (Al, Ga, In, As or P or N respectively), even if these can be partially replaced by small amounts of other substances. A quinary semiconductor composed of Al, Ga, In (Group III), P and As (Group V) is also conceivable.

[0009] According to at least one embodiment, the first semiconductor region has a protruding region, wherein the first semiconductor region protrudes laterally beyond the active region and the second semiconductor region. "Laterally" means in one or more lateral directions, where one or more lateral directions are parallel to the main extension plane of the semiconductor layer stack.

[0010] According to at least one embodiment, the laser diode component includes a dielectric layer covering the semiconductor layer stack. For example, the dielectric layer is arranged on the opposite surfaces of the semiconductor layer stack and sandwiches the active region. The dielectric layer can be a multilayer including at least two sublayers of different dielectric materials having different refractive indices. Suitable materials for the dielectric layer or sublayers are dielectric materials such as titanium oxide and silicon dioxide.

[0011] According to at least one embodiment, the laser diode component includes a first contact device for electrically contacting the first semiconductor region and a second contact device for electrically contacting the second semiconductor region.

[0012] For example, the first contact device includes a first contact layer that covers a protruding region of the first semiconductor region. The first contact layer can be in electrical contact with the first semiconductor region. The first contact layer can be a metal layer formed of a metal or a metal composition. The first contact device can further include a first contact post disposed on a side of the first contact layer facing away from the first semiconductor region. The first contact post can be in electrical contact with the first contact layer. The first contact post can be a metal multi-layer formed of one or more metals or metal compositions. For example, the first contact post can include a metal layer made of, for example, Ni, and a first contact region containing, for example, Au. The first contact post can be thicker than the first contact layer. The thickness of the metal layer can be between 5 and 100 μm, preferably between 10 and 50 μm, and most preferably between 20 and 30 μm.

[0013] The second contact device includes, for example, a terminal layer that partially covers the second semiconductor region. For example, the terminal layer is formed of a TCO (transparent conductive oxide) and / or includes a semiconductor tunnel junction. The terminal layer can be designed to have low optical absorption. The terminal layer can be disposed in a vertical direction between a dielectric layer and the second semiconductor region. The vertical direction can be parallel to the radiation emission direction.

[0014] The second contact device can further include a second contact layer that laterally surrounds the terminal layer.

[0015] In addition, the second contact layer can partially overlap the terminal layer laterally. For example, the second contact layer is a metal layer formed of a metal or a metal composition. The second contact layer can be in electrical contact with the terminal layer.

[0016] Furthermore, the second contact device can include a second contact post disposed on a side of the second contact layer facing away from the second semiconductor region. The second contact post can be a single-layer or multi-layer metal formed of one or more metals or metal compositions. For example, the second contact post can include a Ni layer and a second contact region containing, for example, Au. The second contact post can be thicker than the second contact layer. The second contact post can be in electrical contact with the second contact layer.

[0017] According to at least one embodiment, the first contact region of the first contact post laterally surrounds the second contact region of the second contact post. In addition, the first contact post can laterally surround the second contact post. It is possible that the first contact region or the first contact post does not completely laterally surround the second contact region or the second contact post. The first contact region and the second contact region can be disposed in a common contact plane. For example, the common contact plane is disposed on a side of the active region opposite to the radiation-emitting side of the laser diode component. Thus, the laser diode component has a flip-chip design.

[0018] According to at least one embodiment of the laser diode component, it includes:

[0019] - A semiconductor layer stack, comprising:

[0020] - A first semiconductor region,

[0021] - A second semiconductor region, and

[0022] - An active region for emitting laser radiation, wherein the active region is arranged between the first semiconductor region and the second semiconductor region, and wherein the first semiconductor region has a protruding region, wherein the first semiconductor region protrudes laterally beyond the active region and the second semiconductor region,

[0023] - A dielectric layer covering the semiconductor layer stack,

[0024] - A first contact device for electrically contacting the first semiconductor region, comprising:

[0025] - A first contact layer covering the protruding region of the first semiconductor region, and

[0026] - A first contact post arranged on a side of the first contact layer facing away from the first semiconductor region,

[0027] - A second contact device for electrically contacting the second semiconductor region, comprising:

[0028] - A terminal layer partially covering the second semiconductor region,

[0029] - A second contact layer laterally surrounding the terminal layer, and

[0030] - A second contact post arranged on a side of the second contact layer facing away from the second semiconductor region, wherein

[0031] A first contact area of the first contact post laterally surrounds a second contact area of the second contact post.

[0032] According to at least one embodiment or configuration, the first contact post and the second contact post are separated by an isolation trench. For example, the isolation trench has a shape rotationally symmetric about the central axis of the laser diode component. The isolation trench may have the shape of a circular ring. Advantageously, the rotationally symmetric shape of the isolation trench helps to balance thermo-mechanical stress and thus reduce the risk of damage.

[0033] According to at least one embodiment or configuration, the first contact area and the second contact area each have a symmetric shape, for example a shape rotationally symmetric about the central axis of the laser diode component. The shape of the first contact area may be symmetric, but may deviate slightly from the rotationally symmetric shape in the region where the second device electrode is to be arranged to contact the second contact area.

[0034] For example, the second contact region has a circular shape. Additionally, the first contact region may have a circular or nearly circular edge facing the second contact region and may have a rectangular or nearly rectangular edge facing away from the second contact region.

[0035] The symmetric, for example rotationally symmetric, shape of the contact regions ensures good robustness of the laser diode component.

[0036] According to at least one embodiment or configuration, each of the second contact layer and the terminal layer has a shape that is rotationally symmetric with respect to the central axis of the laser diode component, such as a circular or annular shape. However, the shape of the first contact layer may deviate slightly from the rotationally symmetric shape. For example, the first contact layer may have a circular inner edge and a rectangular outer edge, where the corners of the outer edge are cut off. At the cut-off corners, a sacrificial layer of a semiconductor layer sequence for manufacturing the semiconductor layer stack is accessible, as will be explained in more detail below.

[0037] According to at least one embodiment or configuration, the laser diode component includes an insulating layer, where the insulating layer partially covers the second semiconductor region and includes an opening, and the terminal layer is arranged in the opening and contacts the second semiconductor region. In the final component, the insulating layer can serve as a current confinement layer for laterally confining the current flowing through the semiconductor layer stack. For example, the insulating layer is formed of a transparent electrically insulating material such as SiO2.

[0038] According to at least one embodiment or configuration, the second semiconductor region and the active region do not project laterally beyond the insulating layer. In particular, the lateral extent and shape of the second semiconductor region and the active region are determined by the insulating layer. During the production process, the insulating layer can serve as a mask layer for patterning the semiconductor layer sequence such that the semiconductor layer stack has a first semiconductor region that projects laterally beyond the second semiconductor region and the active region. The insulating layer may have the shape of a circular ring. Thus, the second semiconductor region and the active region may have circular side edges, while the first semiconductor region may have rectangular side edges.

[0039] According to at least one embodiment or configuration, a dielectric layer is arranged at least partially on all outer surfaces of the semiconductor layer stack. The outer surface is to be understood as the surface of the semiconductor layer stack that bounds the semiconductor layer stack to the outside and is not arranged within the semiconductor layer stack. In other words, the semiconductor layer stack may be arranged inside the dielectric layer. The outer surface may be the first main surface, the second main surface, or the side surface of the semiconductor layer stack.

[0040] According to at least one embodiment or configuration, a dielectric layer forms a laser resonator of a laser diode component. In particular, a first part of the dielectric layer and a second part of the dielectric layer arranged on opposite sides of the active region can form the laser resonator. Each of the first and second parts of the dielectric layer can form a DBR (distributed Bragg reflector) mirror body. For example, the thickness of the semiconductor layer stack is optimized to form an optical cavity between the first and second parts of the dielectric layer.

[0041] According to at least one embodiment or configuration, the dielectric layer includes a first recess and a second recess, and a first contact device is partially arranged in the first recess, while a second contact device is partially arranged in the second recess. In addition, the dielectric layer can include pores at the side surface of the semiconductor layer stack. In particular, the pores are in the region of the above-mentioned cut-off angle.

[0042] According to at least one embodiment or configuration, the laser diode component includes a mirror layer, which can be metallic and includes, for example, Al or Ag. The mirror layer can be arranged on the side of the dielectric layer facing away from the terminal layer and can overlap the terminal layer laterally.

[0043] According to at least one embodiment or configuration, the laser diode component includes a carrier, the carrier includes a first connection device and a second connection device, wherein a first connection area of the first connection device is connected to a first contact area of the first contact device, and a second connection area of the second connection device is connected to a second contact area of the second contact device. For example, the first connection area at least partially laterally surrounds the second connection area. In particular, the shape of the first connection area substantially matches the shape of the first contact area, and the shape of the second connection area substantially matches the shape of the second contact area.

[0044] According to at least one embodiment or configuration, the carrier includes a carrier substrate formed of a material having a thermal expansion coefficient matching that of the material of the semiconductor layer stack (such as silicon, ceramic or a suitable metallic material). The first connection area and the second connection area can be arranged on the side of the carrier substrate facing the semiconductor layer stack. Other parts of the first and second connection devices can be arranged inside the carrier substrate and / or on the side of the carrier substrate facing away from the semiconductor layer stack.

[0045] According to at least one embodiment or configuration, the semiconductor layer stack is arranged on the carrier such that the second semiconductor region faces the carrier. The carrier can be arranged at the rear side of the laser diode component.

[0046] According to at least one embodiment or configuration, the laser diode component includes a first device electrode and a second device electrode for making external electrical contact with the laser diode component, wherein the first device electrode is part of the first connection device and the second device electrode is part of the second connection device.

[0047] According to at least one embodiment or configuration, laser radiation is emitted mainly from the front side of the laser diode component facing away from the carrier. Thus, this front side is the radiation exit side of the laser diode component. For example, the laser diode component is a VCSEL.

[0048] According to at least one embodiment or configuration, the semiconductor layer stack is substantially free of a growth substrate. In other words, the laser diode component can be a thin-film device. "Substantially free" means that the growth substrate is absent or only a part remains. The thin-film design of the laser diode component provides excellent device efficiency.

[0049] Hereinafter, embodiments or configurations of a method suitable for manufacturing the laser diode component mentioned above are described. This means that all features described in connection with the laser diode component also apply to the method and vice versa.

[0050] According to at least one embodiment of a method, the following steps are included:

[0051] - Providing a semiconductor layer sequence for manufacturing at least one semiconductor layer stack, the semiconductor layer sequence including:

[0052] - A first semiconductor layer,

[0053] - A second semiconductor layer, and

[0054] - An active layer for emitting laser radiation, wherein the active layer is arranged between the first semiconductor layer and the second semiconductor layer,

[0055] - Applying a mask layer on a part of the second semiconductor layer,

[0056] - Applying a terminal layer structure on a part of the second semiconductor layer for manufacturing at least one terminal layer,

[0057] - Patterning the semiconductor layer sequence by means of the mask layer such that the first semiconductor layer has at least one protruding region, wherein the first semiconductor layer protrudes laterally beyond the active layer and the second semiconductor layer,

[0058] - Applying a contact layer structure for manufacturing at least one first contact layer and at least one second contact layer on at least one protruding region of the first semiconductor layer and on the second semiconductor layer such that the contact layer structure laterally surrounds the terminal layer structure,

[0059] - Applying a first dielectric layer structure on the semiconductor layer sequence to manufacture a first part of at least one dielectric layer,

[0060] - A contact column structure is applied on a first dielectric layer structure such that a first contact region of at least one first part of the contact column structure laterally surrounds a second contact region of at least one second part of the contact column structure. At least one first part is provided for manufacturing at least one first contact column, and at least one second part is provided for manufacturing at least one second contact column.

[0061] A first semiconductor layer is provided for manufacturing a first semiconductor region of at least one semiconductor layer stack, and can thus correspond to the first semiconductor region with respect to the layer structure of the first semiconductor layer and / or with respect to the material composition of the first semiconductor layer as mentioned above. A second semiconductor layer is provided for manufacturing a second semiconductor region of at least one semiconductor layer stack, and can thus correspond to the second semiconductor region, in particular with respect to the layer structure and / or material composition of the second semiconductor layer as mentioned above. And an active layer is provided for manufacturing an active region of at least one semiconductor layer stack, and can thus correspond to the active region, in particular with respect to the layer structure and / or material composition of the active layer as mentioned above.

[0062] According to at least one embodiment or configuration, a semiconductor layer sequence is provided on a growth substrate (e.g., a GaN growth substrate). The first semiconductor layer can be arranged facing the growth substrate, while the second semiconductor layer can be arranged facing away from the growth substrate.

[0063] According to at least one embodiment or configuration, the semiconductor layer sequence, e.g., the first semiconductor layer, includes a highly doped sacrificial layer facing the growth substrate. For example, the sacrificial layer is n-doped, e.g., doped with Si. In addition, the sacrificial layer can have a doping concentration of 2×10 18 to 10 20 cm -3 、especially 8×10 18 to 2×10 19 cm -3 . For example, a semiconductor layer with a lower doping concentration is provided on the side facing away from the growth substrate after the sacrificial layer.

[0064] According to at least one embodiment or configuration, the step of applying a mask layer is performed before the step of applying the terminal layer structure, and the step of patterning the semiconductor layer sequence by means of the mask layer is performed after the step of applying the terminal layer structure. In the final laser diode component, a part of the mask layer assigned to one semiconductor layer stack can form the insulating layer as mentioned above, and can thus correspond to the insulating layer, in particular with respect to its structure and material composition.

[0065] A terminal layer structure is provided for manufacturing a terminal layer of at least one laser diode component, and can thus correspond to the terminal layer, in particular with respect to the layer structure and / or material composition as mentioned above.

[0066] According to at least one embodiment or configuration, in a first subsequent patterning step after patterning of the second semiconductor layer and the active layer, the first semiconductor layer is patterned such that an upper region and a lower region are fabricated, wherein the lower region is closer to the growth substrate than the active layer and laterally protrudes beyond the upper region, and the upper region is closer to the active layer than the growth substrate. In particular, the upper region is formed with a cut-off angle. The sacrificial layer may terminate the lower region on the side facing the growth substrate.

[0067] According to at least one embodiment or configuration, in a second subsequent patterning step, the lower region is patterned such that, except at the cut-off angle, the lower region no longer laterally protrudes beyond the upper region. At the cut-off angle, the sacrificial layer is accessible. Further, the lower region is patterned such that the growth substrate laterally protrudes beyond the lower region in the laterally protruding region.

[0068] According to at least one embodiment or configuration, the step of applying the contact layer structure is performed after the second subsequent patterning step. The contact layer structure may correspond to the first and second contact layers, especially with respect to its layer structure and / or material composition as mentioned above. Advantageously, the first and second contact layers may be fabricated in a common step by setting the contact layer structure.

[0069] According to at least one embodiment or configuration, the step of setting the first dielectric layer structure is after the step of applying the contact layer structure. The first dielectric layer structure may correspond to the dielectric layer, especially with respect to its layer structure and / or material composition as mentioned above.

[0070] For example, the first dielectric layer structure is set such that it covers the laterally protruding region of the growth substrate. Further, the first dielectric layer structure is set such that it extends from the growth substrate to the contact layer structure on the second semiconductor layer on the outer surface of the semiconductor layer sequence.

[0071] For example, the first dielectric layer structure is provided with pores at the cut-off angle of the upper region, and the highly doped sacrificial layer is removed by an etchant introduced via at least one pore. The inventors have found that introducing the etchant from the corner rather than from all sides improves the removal of the sacrificial layer.

[0072] Advantageously, the first dielectric layer structure forms a tether structure in the laterally protruding region of the growth substrate, which holds the separated part of the semiconductor layer sequence to the growth substrate after removal of the sacrificial layer.

[0073] According to at least one embodiment or configuration, the first dielectric layer structure is provided with a first recess in the region of the contact layer structure provided for the first contact layer, and a second recess in the region of the contact layer structure provided for the second contact layer.

[0074] According to at least one embodiment or configuration, the step of applying the contact pillar structure is after the step of applying the first dielectric layer structure. At least one first contact pillar and at least one second contact pillar can be fabricated from the contact pillar structure in a common step.

[0075] The step of applying the contact pillar structure can include deposition of a seed layer, electrodeposition of a metal layer (such as an Ni layer), and deposition of a contact region (such as made of Au). A photomask can be applied before deposition of the seed layer and removed after deposition of the contact region, where the photomask provides a desired shape for at least one first contact pillar and at least one second contact pillar.

[0076] According to at least one embodiment or configuration, the step of removing the sacrificial layer is carried out after the step of applying the contact pillar structure. The removal can include an electrochemical etching process.

[0077] According to at least one embodiment or configuration, after the step of removing the sacrificial layer is the step of applying a carrier structure on the side of the semiconductor layer sequence facing away from the growth substrate. The carrier structure is provided for fabricating at least one carrier and can thus correspond to the carrier, especially with regard to its structure and / or material composition as mentioned above. Thus, the carrier structure can include a carrier substrate structure and first and second connection device structures, the carrier substrate structure generating at least one carrier substrate, and the first and second connection device structures generating the first and second connection devices.

[0078] During a wafer-to-wafer bonding process, the carrier structure can be bonded to the semiconductor layer sequence by thermocompression or welding, where the first connection device structure is connected to a first contact device structure including at least one first part of the contact pillar structure, and the second connection device structure is connected to a second contact device structure including at least one second part of the contact pillar structure.

[0079] According to at least one embodiment or configuration, after the step of applying the carrier structure, the growth substrate is removed by separating (such as breaking) a tether structure.

[0080] According to at least one embodiment or configuration, after the step of removing the growth substrate, a second dielectric layer structure is applied on the side of the semiconductor layer sequence facing away from the carrier structure to fabricate at least a second part of the dielectric layer. The second dielectric layer structure can correspond to the dielectric layer, especially with regard to its layer structure and / or material composition as mentioned above.

[0081] The manufacturing process allows for fabrication of multiple laser diode components in an assembly, where the laser diode components are separated from the assembly at a completion stage. Fabrication in an assembly allows for manufacturing of laser diode components at a lower cost.

[0082] The laser diode component is suitable as a light source in a laser-based imager for AR (augmented reality) and VR (virtual reality) applications. Description of the Drawings

[0083] From the exemplary embodiments explained below in conjunction with the drawings, other preferred embodiments and other improvements of the laser diode component and the manufacturing method for manufacturing the laser diode component will become apparent.

[0084] Figures 1 to 14 A schematic cross-sectional view and a plan view showing the method steps of an exemplary embodiment of a manufacturing method for manufacturing a laser diode component,

[0085] Figures 15A - 15C 、 Figures 16A - 16B and Figures 17A - 17B A schematic cross-sectional view and a plan view showing an exemplary embodiment of the laser diode component.

[0086] In the drawings, identical, equivalent or equivalent acting components may be represented by the same or similar reference numerals. These figures are schematic illustrations and are therefore not necessarily to scale. For better illustration, relatively small components and especially layer thicknesses may be shown exaggeratedly. Detailed Description

[0087] According to an exemplary embodiment of a method for manufacturing a laser diode component, the method includes providing a semiconductor layer sequence 2' (see Figure 1 ) for manufacturing at least one semiconductor layer stack 2 (see Figure 15B , Figure 16B , Figure 17B ). The semiconductor layer sequence 2' includes a first semiconductor layer 3', a second semiconductor layer 5' and an active layer 4' for emitting laser radiation, wherein the active layer 4' is arranged between the first semiconductor layer 3' and the second semiconductor layer 5'.

[0088] The semiconductor layer sequence 2' is provided on a growth substrate 6' which may for example comprise or consist of a semiconductor material such as GaN. The first semiconductor layer 3' faces the growth substrate 6', while the second semiconductor layer 5' faces away from the growth substrate 6'.

[0089] Materials based on arsenide, phosphide or nitride compound semiconductors are suitable for the semiconductor layers 3', 4', 5' of the semiconductor layer sequence 2'. The meaning of "compound semiconductor based on arsenide, phosphide or nitride" has been explained above and further depends thereon.

[0090] The first semiconductor layer 3' is provided for manufacturing the first semiconductor region 3 of at least one semiconductor layer stack 2 (see Figure 15B , Figure 16B, Figure 17B ), and can thus at least partly correspond to the first semiconductor region 3 with respect to the layer structure of the first semiconductor region 3 and / or with respect to its material composition as mentioned above. The first semiconductor layer 3' is of the first conductivity type, which can be of the n-conductivity type, and has a multilayer structure. Starting from the side facing the growth substrate 6' to the side facing the active layer 4', the first semiconductor layer 3' sequentially includes an n-doped current spreading layer 31', a highly n-doped sacrificial layer 32', an unintentionally doped layer 33', and an n-doped layer 34'. For example, all layers 31', 32', 33', and 34' are GaN layers. In addition, the unintentionally doped layer 33' has a lower doping concentration than the sacrificial layer 32', which sets a clearly defined etch stop and a smooth surface when separating the semiconductor layer sequence 2' from the growth substrate 6' by electrochemically etching the sacrificial layer 32' (see Figure 11B ). The sacrificial layer 32' can have a doping concentration of 2×10 18 to 10 20 cm -3 , in particular 8×10 18 to 2×10 19 cm -3 . The n-type dopant can be Si. The n-type doped current spreading layer 31' can have a doping concentration of approximately 3×10 18 cm -3 .

[0091] The active layer 4' provided for manufacturing the active region 4 of at least one semiconductor layer stack 2 (see Figure 15B , Figure 16B , Figure 17B ) can correspond to the active region 4, in particular with respect to its layer structure and / or material composition as mentioned above, and can include a sequence of single layers forming a quantum well structure, in particular a single quantum well (SQW) structure or a multiple quantum well (MQW) structure.

[0092] The second semiconductor layer 5' is provided for manufacturing the second semiconductor region 5 of at least one semiconductor layer stack 2 (see Figure 15B , Figure 16B , Figure 17B ), and can thus correspond to the second semiconductor region 5, in particular with respect to its layer structure and / or material composition as mentioned above. The second semiconductor layer 5' is of the second conductivity type, which can be of the p-conductivity type, and has a single-layer or multilayer structure. The second semiconductor layer 5' can be a GaN layer.

[0093] The layers 3', 4', 5' can be epitaxially deposited on the growth substrate 6'.

[0094] As shown in the schematic plan view of Figure 2A and taken along the line AA' shown in Figure 2A ​Figure 2B As shown in the schematic cross-sectional view, after the step of providing the semiconductor layer sequence 2', a mask layer 7' can be applied on a part of the second semiconductor layer 5'. The mask layer 7' can have a rotationally symmetric shape, in particular an annular shape, in the region of each semiconductor layer stack to be fabricated, and an opening 70' can be provided in the region of each semiconductor layer stack to be fabricated. The mask layer 7' can include an electrically insulating transparent material such as SiO2. The mask layer 7' can be fabricated by evaporation. A part of the mask layer 7' can remain in the final laser diode component 1 (see Figure 15B , Figure 16B , Figure 17B ), and form an insulating layer 7, and can thus correspond to the insulating layer, especially with respect to its structure and material composition.

[0095] Before the step of applying the mask layer 7', there can be a passivation step of the outer surface of the second semiconductor layer 5', and the passivation step can be carried out by dry etching, for example by reactive ion etching.

[0096] As Figure 3A shown in the schematic plan view and the Figure 2A schematic cross-sectional view taken along the same line AA' as shown in Figure 3B , after the step of applying the mask layer 7', there is a step of applying a terminal layer structure 8' on a part of the second semiconductor layer 5' to fabricate at least one terminal layer 8 (see Figure 15B , Figure 16B , Figure 17B ). For example, the terminal layer structure 8' is applied such that it fills the opening 70' of the mask layer 7' and covers the edge of the mask layer 7' facing away from the outer surface of the second semiconductor layer 5', where the edge laterally surrounds the opening 70'. "Laterally" or "lateral" means in one or more lateral directions, where one or more lateral directions are parallel to the main extension plane of the semiconductor layer sequence 2' or the semiconductor layer stack. The first lateral direction L1 and the second lateral direction L2 are shown in Figure 3A .

[0097] The terminal layer structure 8' has a rotationally symmetric shape, especially a circular shape in the region of each semiconductor layer stack to be fabricated. The terminal layer structure 8' can be formed of a transparent conductive material such as TCO (transparent conductive oxide) and / or include a semiconductor tunnel junction. The terminal layer structure 8' is provided for fabricating at least one terminal layer 8 of the semiconductor layer stack 2, and can thus correspond to the terminal layer, especially with respect to its layer structure and / or material composition (see Figure 15B , Figure 16B , Figure 17B ).

[0098] As Figure 4A shown in the schematic plan view and alongFigure 2A intercepted by the same line AA' as shown Figure 4B As shown in the schematic cross-sectional view, after the step of applying the terminal layer structure 8', there is a step of patterning the semiconductor layer sequence 2' through the mask layer 7' such that the first semiconductor layer 3' has a protruding region 30' in the region of each semiconductor layer stack to be fabricated, where the first semiconductor layer 3' laterally protrudes beyond the active layer 4' and the second semiconductor layer 5' in the protruding region 30'. Patterning can be carried out by dry etching, for example, by reactive ion etching.

[0099] In particular, the second semiconductor layer 5' and the active layer 4' do not laterally protrude beyond the mask layer 7' in the region of the same semiconductor layer stack to be fabricated. The lateral extension can be equal to the lateral extension of the corresponding part of the mask layer 7'. In addition, the shapes of the second semiconductor layer 5' and the active layer 4' can be determined by the mask layer 7'.

[0100] Therefore, the second semiconductor layer 5' and the active layer 4' can have circular side edges.

[0101] As Figure 5A shown in the schematic plan view and intercepted by the same line AA' as shown in Figure 2A intercepted by the same line AA' as shown Figure 5B As shown in the schematic cross-sectional view, after the step of patterning the semiconductor layer sequence 2' in the region of the second semiconductor layer 5' and the active layer 4', there is a first subsequent patterning step in which the first semiconductor layer 3' is patterned such that an upper region 35' and a lower region 36' are fabricated, where the lower region 36' is closer to the growth substrate 6' than the active layer 4' and laterally protrudes beyond the upper region 35', which is closer to the active layer 4' than the growth substrate 6'. In particular, the upper region 35' is formed with a cut-off angle 35A'. The upper region 35' can include an n-doped layer 34', while the lower region 36' can include a highly n-doped sacrificial layer 32' and an unintentionally doped layer 33', where the sacrificial layer 32' terminates the lower region 36' on the side facing the growth substrate 6'. The patterning of the first subsequent patterning step can be carried out by dry etching (e.g., by reactive ion etching).

[0102] As Figure 6A shown in the schematic plan view and intercepted by the same line AA' as shown in Figure 2A intercepted by the same line AA' as shown Figure 6B As shown in the schematic cross-sectional view, after the first subsequent patterning step, there is a second subsequent patterning step in which the lower region 36' is patterned such that, except at the cut-off angle 35A', the lower region 36' no longer laterally protrudes beyond the upper region 35'. At the cut-off angle 35A', the sacrificial layer 32' is accessible.

[0103] Furthermore, the patterned lower region 36' is formed such that the growth substrate 6' laterally protrudes beyond the lower region 36' in the lateral protrusion region 60'. The patterning of the subsequent second patterning step can be carried out by dry etching, for example by reactive ion etching.

[0104] As Figure 7A shown in the schematic plan view of Figure 2A and the schematic cross-sectional view taken along the same line AA' as shown in Figure 7B after the second subsequent patterning step, a contact layer structure 90' is applied to fabricate at least one first contact layer 91 and at least one second contact layer 92 (see Figure 15B , Figure 16B , Figure 17B ), wherein the contact layer structure 90' is applied on the protrusion region 30' of the first semiconductor layer 3' and on the second semiconductor layer 5' such that the contact layer structure 90' laterally surrounds the terminal layer structure 8' in the region of each semiconductor layer stack to be fabricated.

[0105] In particular, in the region of each semiconductor layer stack to be fabricated, a first part 91' of the contact layer structure 90' that should form the first contact layer 91 in the final laser diode component laterally surrounds a second part 92' of the contact layer structure 90'. The second part is arranged in the region of each semiconductor layer stack to be fabricated and should form the second contact layer 92 in the final laser diode component. The second part 92' laterally surrounds and partially laterally overlaps with a part of the terminal layer structure 8' in the region of each semiconductor layer stack to be fabricated. The first part 91' and the second part 92' are separated by an annular gap 10'.

[0106] The contact layer structure 90' can be a metal layer formed of a metal or a metal composition. The contact layer structure 90' can correspond to the first and second contact layers 91, 92, especially with respect to their layer structure and / or material composition. Advantageously, the first and second contact layers 91, 92 can be fabricated in a common step by providing the contact layer structure 90'.

[0107] As Figure 8A shown in the schematic plan view of Figure 2A and the schematic cross-sectional view taken along the same line AA' as shown in Figure 8B after the step of applying the contact layer structure 90', a first dielectric layer structure 110' is applied on the semiconductor layer sequence 2' to fabricate at least a first part 110 of a dielectric layer 11 (see Figure 15B , Figure 16B , Figure 17B ).

[0108] The first dielectric layer structure 110' may correspond to the dielectric layer 11 or the first part 110 of the dielectric layer 11, especially with regard to its layer structure and / or material composition as mentioned above. The first dielectric layer structure 110' may be a multilayer structure including at least two sub-layers of different dielectric materials having different refractive indices. Suitable materials for the first dielectric layer structure 110' or the sub-layers are dielectric materials such as titanium oxide and silicon dioxide.

[0109] The first dielectric layer structure 110' is arranged such that it extends from the growth substrate 6' over the outer surfaces 2A', 2C' of the semiconductor layer sequence 2' up to the contact layer structures 90', 92' on the second semiconductor layer 5'. When the contact layer structures 90', 92' on the second semiconductor layer 5' are only partially covered, the terminal layer structure 8' is completely covered by the first dielectric layer structure 110'.

[0110] The first dielectric layer structure 110' has a first recess 12' in the region of the first part 91' of the contact layer structure 90' provided for the first contact layer, and a second recess 13' in the region of the second part 92' of the contact layer structure 90' provided for the second contact layer. While the second recess 13' has the same shape as the second part 92', which may be annular, the first recess 12' has a different shape from the first part 91' and has a circular shape. However, it can also be vice versa, i.e., the second recess 13' has a circular shape and the first recess 12' is annular.

[0111] Furthermore, the first dielectric layer structure 110’ has pores 14’ at the cut-off angle 35A’ of the upper region 35’ in the region of each semiconductor layer stack to be manufactured.

[0112] The manufacture of the first dielectric layer structure 110' having the recesses 12', 13' and the pores 14' may include a lithography process.

[0113] As Figure 9A shown in the schematic plan view and the schematic sectional view taken along the same line AA' as shown in Figure 2A the step of applying the first dielectric layer structure 110' may be followed by an optional step of applying a mirror layer structure 15' on the first dielectric layer structure 110' on the side facing away from the terminal layer structure 8'. The mirror layer structure 15' may be provided for at least one mirror layer 15 (see Figure 9B ), Figure 15B Figure 16B Figure 17B ) and may be, for example, a metal layer structure including Al or Ag.

[0114] As Figure 10A shown in the schematic plan view and along​​Figure 2A intercepted by the same line AA' as shown Figure 10B As shown in the schematic cross-sectional view, after the step of applying the first dielectric layer structure 110' or the optional step of applying the mirror layer structure 15', a contact pillar structure 16' is applied on the first dielectric layer structure 110' such that a first contact region 161A' of at least one first part 161' of the contact pillar structure 16' laterally surrounds a second contact region 162A' of at least one second part 162' of the contact pillar structure 16' (see Figure 15B , Figure 16B , Figure 17B ), at least one first part is configured to fabricate at least one first contact pillar 161, and at least one second part is configured to fabricate at least one second contact pillar 162. The contact pillar structure 16' extends into the first and second recesses 12', 13' and contacts the contact layer structure 90' there

[0115] The step of applying the contact pillar structure 16' may include the deposition of a seed layer, such as the electrodeposition of a metal layer of Ni, and the deposition of a contact region layer made of, for example, Au, wherein the first and second contact regions 161A', 162A' are fabricated from the same contact region layer. A photomask may be applied before the deposition of the seed layer and removed after the deposition of the contact region layer, wherein the photomask provides the desired shape for the contact pillar structure 16'.

[0116] As Figure 11A shown in the schematic plan view and intercepted by the same line AA' as shown in Figure 2A , Figure 11B As shown in the schematic cross-sectional view, after the step of applying the contact pillar structure 16', the highly doped sacrificial layer 32' is removed by an etchant introduced via at least one pore 14' (see arrow). The inventors have found that introducing the etchant from the corners rather than from all sides improves the removal of the sacrificial layer 32'.

[0117] The removal may include an electrochemical etching process. The electrochemical etching process includes placing the component in an acid and applying an etching voltage. The etching rate can be adjusted by the etching voltage and / or the doping concentration of the sacrificial layer 32'. For example, the etching rate can be increased by increasing the etching voltage and / or the doping concentration of the sacrificial layer 32'.

[0118] Advantageously, the first dielectric layer structure 110' forms a tethering structure in the laterally protruding region 60' of the growth substrate 6', and the tethering structure holds the separated parts of the semiconductor layer sequence 2' to the growth substrate 6' after the removal of the sacrificial layer 32'. For example, an n-doped current spreading layer 31' may remain on the growth substrate 6'.

[0119] As Figure 12A shown in the schematic plan view and along the same asFigure 2A intercepted by the same line AA' as shown Figure 12B As shown in the schematic cross-sectional view, after the step of removing the sacrificial layer 32', a step of applying a carrier structure 17' on the side of the semiconductor layer sequence 2' facing away from the growth substrate 6' is performed. The carrier structure 17' is provided for manufacturing at least one carrier 17 (see Figure 15B , Figure 16B , Figure 17B ), and can thus correspond to the carrier 17, especially with regard to its structure and / or material composition. The carrier structure 17' can include a carrier substrate structure 170' which gives rise to at least one carrier substrate 170, and can include first and second connection device structures 171', 172' which give rise to a first connection device 171 and a second connection device 172 for at least one laser diode component 1 (see Figure 15B , Figure 16B , Figure 17B ).

[0120] The carrier structure 17' is bonded to the semiconductor layer sequence 2' by, for example, thermocompression or welding during a wafer-to-wafer bonding process, wherein the first connection device structure 171' is connected to a first contact device structure 18' which includes at least one first part 91' of a contact layer structure 90' and at least one first part 161' of a contact post structure 16'. In addition, the second connection device structure 172' is connected to a second contact device structure 19' which includes a terminal layer structure 8', at least one second part 92' of a contact layer structure 90' and at least one second part 162' of a contact post structure 16'.

[0121] The first connection device structure 171' includes a first connection region 171A' in the region of the carrier 17 to be manufactured, and includes a second connection region 172A' in the region of the carrier 17 to be manufactured. As Figure 12A shown, the first connection region 171A' can partially laterally surround the second connection region 172A', wherein a part of the second connection region 172A' extends through the first connection region 171A' to the edge of the carrier 17 to be manufactured. In particular, the shape of the first connection region 171A' substantially matches the shape of the first contact region 161A', and the shape of the second connection region 172A' substantially matches the shape of the second contact region 162A'.

[0122] The carrier substrate structure 170' can be formed of a material having a thermal expansion coefficient matching that of the material of the semiconductor layer sequence 2', such as silicon, ceramic or a suitable metallic material.

[0123] As Figure 13A shown in the schematic plan view and along Figure 2AIntercepted by the same line AA' as shown Figure 13B As shown in the schematic cross-sectional view, after the step of applying the carrier structure 17', the growth substrate 6' is removed by separation (see arrow), for example, by breaking the tethering structure of the first dielectric layer structure 110'.

[0124] As Figure 14 along the same direction as Figure 2A As shown in the cross-sectional view intercepted by the same line AA' as shown, after the step of removing the growth substrate 6', a second dielectric layer structure 111' is applied on the side of the semiconductor layer sequence 2' facing away from the carrier structure 17' to fabricate the second part 111 of at least one dielectric layer 11 (see Figure 15B , Figure 16B , Figure 17B ). The second dielectric layer structure 111' can correspond to the dielectric layer 11, especially with respect to its layer structure and / or material composition.

[0125] After the step of applying the second dielectric layer structure 111', a separation process can be carried out, in which a plurality of laser diode components 1 as shown in Figures 15A to 15C are separated from the assembly at the completion stage. The fabrication in the assembly allows the laser diode components 1 to be fabricated at a lower cost.

[0126] Combined with Figure 15A the schematic plan view, the schematic cross-sectional view intercepted along the line BB' as shown in Figure 15A and the schematic cross-sectional view intercepted along the line CC' as shown in Figure 15B describe an exemplary embodiment of the laser diode component 1, and the laser diode component 1 can be fabricated by combining the method described in Figure 15A Figure 15C Figures 1 to 14

[0127] The laser diode component 1 is a thin-film VCSEL and has a flip-chip design.

[0128] The laser diode component 1 includes a semiconductor layer stack 2 formed by the semiconductor layer sequence 2' (see Figure 1 ), where the semiconductor layer stack 2 includes a first semiconductor region 3 of a first conductivity type, such as an n-doped semiconductor region; a second semiconductor region 5 of a second conductivity type, such as a p-doped semiconductor region; and an active region 4 for emitting laser radiation, where the active region 4 is arranged between the first semiconductor region 3 and the second semiconductor region 5 and can include a quantum well structure as mentioned above. The first semiconductor region 3 can include several layers, such as an unintentionally doped layer 33 formed by an unintentionally doped layer 33' and an n-doped layer 34 formed by an n-doped layer 34' (see Figure 1 ). The second semiconductor region 5 can also have a multi-layer structure. ​​​

[0129] For example, the above materials based on arsenide, phosphide or nitride compound semiconductors are suitable for the semiconductor regions 3, 4, 5 or a single layer of the semiconductor layer stack 2.

[0130] The first semiconductor region 3 has a protruding region 30, where the first semiconductor region 3 protrudes laterally beyond the active region 4 and the second semiconductor region 5. "Laterally" means in one or more lateral directions, such as the first lateral direction L1 or the second lateral direction L2, where one or more lateral directions are parallel to the main extension plane of the semiconductor layer stack 2. For example, the second semiconductor region 5 and the active region 4 have circular side edges, while the first semiconductor region 3 has rectangular side edges.

[0131] The laser diode component 1 includes a dielectric layer 11 covering the semiconductor layer stack 2. The dielectric layer 11 is arranged on the opposite surfaces of the semiconductor layer stack 2 and sandwiches the active region 4 therebetween. The dielectric layer 11 includes a first part 110, which is formed by a first dielectric layer structure 110' (see Figure 8A and 8B ) and covers the semiconductor layer stack 2 on the second main surface 2B facing the carrier 17 and on the side surface 2C that laterally bounds the semiconductor layer stack 2. The dielectric layer 11 includes a second part 111, which is produced by a second dielectric layer structure 111' (see Figure 14 ) and covers the semiconductor layer stack 2 on the first main surface 2A facing away from the carrier 17.

[0132] The dielectric layer 11 and its first and second parts 110, 111 can be a multilayer including at least two sublayers of different dielectric materials having different refractive indices. Suitable materials for the dielectric layer or sublayers are dielectric materials such as titanium oxide and silicon dioxide.

[0133] The dielectric layer 11 forms the laser resonator of the laser diode component 1. In particular, the first part 110 and the second part 111 arranged on the opposite sides of the active region 4 are DBR (distributed Bragg reflector) mirrors, which constitute a vertical laser resonator, where the laser radiation is emitted in the vertical direction V and exits the laser diode component 1 on the radiation exit side, which is the front side 1A arranged on one side of the first main surface 2A. The vertical direction V can extend perpendicular to the main extension plane. The dielectric layer 11 can achieve a wide stop band and a higher reflectivity than a semiconductor resonator, for example, more than 99%.

[0134] Advantageously, the growth substrate 6' is removed (see Figure 13, Figure 14)It is allowed to form a laser resonator solely by the dielectric layer 11. Furthermore, by removing the growth substrate 6', the thickness of the semiconductor layer stack 2 can be optimized to form an optical cavity between the first and second parts 110, 111. The laser diode component 1 in which the growth substrate 6' has been removed or at least thinned constitutes a thin-film device.

[0135] The laser diode component 1 includes a first contact device 18 for making electrical contact with the first semiconductor region 3 and a second contact device 19 for making electrical contact with the second semiconductor region 5 (see Figure 15C ).

[0136] The first contact device 18 includes a first contact layer 91 that covers the protruding region 30 of the first semiconductor region 3. The first contact layer 91 is formed from a contact layer structure 90' (see Figure 7A , Figure 7B ) and can be a metal layer formed of a metal or a metal composition.

[0137] The first contact device 18 further includes a first contact post 161 that is arranged on the side of the first contact layer 91 facing away from the first semiconductor region 3. The first contact post 161 is formed from a contact post structure 16' (see Figure 10, Figure 10B ) and can be a metal multilayer formed of one or more metals or metal compositions. For example, the first contact post 161 includes a metal layer made of, for example, Ni, and a first contact region 161A that contains, for example, Au. The first contact post 161 can be thicker than the first contact layer 91. The thickness d of the metal layer of the first contact post 161 can be between 5 and 100 μm, preferably between 10 and 50 μm, and most preferably between 20 and 30 μm.

[0138] The second contact device 19 includes a terminal layer 8 that partially covers the second semiconductor region 5 and is arranged between the dielectric layer 11 and the second semiconductor region 5 in the vertical direction V. The terminal layer 8 has a shape that is rotationally symmetric with respect to the central axis A of the laser diode component 1, such as a circular or annular shape.

[0139] For example, the terminal layer 8 is formed of a TCO (transparent conductive oxide) and / or includes a semiconductor tunnel junction. The terminal layer 8 is designed to have low optical absorption. Thus, the laser radiation emitted from the active region 4 in the direction of the terminal layer 8 can pass through the terminal layer 8 and can be reflected at the highly reflective dielectric layer 11.

[0140] The second contact device 19 includes a second contact layer 92 that laterally surrounds the terminal layer 8 at the second semiconductor region 5 and partially laterally overlaps with the terminal layer 8 and is in electrical contact with the terminal layer 8. The second contact layer 92 is formed from a contact layer structure 90' (see Figure 7A , Figure 7B), and may be a metal layer formed of a metal or a metal composition.

[0141] In addition, the second contact device 19 includes a second contact post 162, which is arranged on the side of the second contact layer 92 facing away from the second semiconductor region 5. The second contact post 162 is formed by a contact post structure 16' (see FIG. 10, Figure 10B ) and may be a metal multi-layer formed of one or more metals or metal compositions. For example, the second contact post 162 may include a Ni layer and a second contact region 162A containing, for example, Au. The second contact post 162 may be thicker than the second contact layer 92.

[0142] The first contact post 161 laterally surrounds the second contact post 162. It is possible that the first contact post 161 does not completely laterally surround the second contact post 162. The first and second contact posts 161, 162 are in electrical contact with the corresponding contact layers 91, 92 and are adapted to dissipate heat during operation.

[0143] The dielectric layer 11 includes a first recess 12 and a second recess 13, and the first contact device 18 (in particular the first contact post 161) is partially arranged in the first recess 12, and the second contact device 19 (in particular the second contact post 162) is partially arranged in the second recess 13. In addition, the dielectric layer includes pores 14 at the side surface of the semiconductor layer stack 2. In particular, the pores 14 are in the region of the cut-off angle 35A (see Figure 15C ) and are generated by combining Figure 10A the mentioned cut-off angle 35A'.

[0144] The first contact region 161A of the first contact post 161 laterally surrounds the second contact region 162A of the second contact post 162. The second contact region 162A has a shape that is rotationally symmetric with respect to the central axis A of the laser diode component 1. The second contact region 162A has a circular shape. In addition, the first contact region 161A has a circular inner edge facing the second contact region 162A and has a substantially rectangular outer edge facing away from the second contact region 162A, where the corners of the outer edge are cut off (see Figure 10A and Figure 15C for the cut-off angle 35A).

[0145] The rotationally symmetric design of the contact region ensures excellent robustness of the laser diode component 1.

[0146] The first contact post 161 and the second contact post 162 are separated by an isolation trench 20. For example, the isolation trench 20 has a shape that is rotationally symmetric with respect to the central axis A of the laser diode component 1. The isolation trench 20 may have the shape of a circular ring (see Figure 10A) Advantageously, the rotationally symmetric shape of the isolation trench 20 helps to balance the thermomechanical stresses and thus reduce the risk of damage.

[0147] The first contact region 161A and the second contact region 162A are arranged in a common contact plane, which is arranged on the side of the active region 4 opposite to the radiation-emitting side 1A of the laser diode component 1. Thus, the laser diode component 1 has a flip-chip design.

[0148] The laser diode component 1 includes an insulating layer 7, which partially covers the second semiconductor region 5 and includes an opening 70, at which a terminal layer 8 is arranged and contacts the second semiconductor region 5. The second semiconductor region 5 and the active region 4 do not project laterally beyond the insulating layer 7. In particular, the lateral extent and shape of the second semiconductor region 5 and the active region 4 are determined by the insulating layer 7.

[0149] In the vertical direction V, the insulating layer 7 is arranged between the second contact layer 92 and the second semiconductor region 5. The insulating layer 7 has the shape of a circular ring.

[0150] During operation, the insulating layer 7 can be used as a current-limiting layer for laterally restricting the current flowing through the semiconductor layer stack 2. For example, the insulating layer 7 is formed by a mask layer 7' (see Figure 2B ) and can include a transparent electrically insulating material such as SiO2.

[0151] Optionally, the laser diode component 1 includes a mirror layer 15, which can be metallic and can contain, for example, Al or Ag. The mirror layer 15 is arranged on the side of the dielectric layer 11 facing away from the terminal layer and laterally overlaps with the terminal layer 8. The reflectivity can be increased by the mirror layer 15.

[0152] The laser diode component 1 includes a carrier 17, which includes a first connection device 171 and a second connection device 172, wherein the first connection region 171A of the first connection device 171 is connected to the first contact region 161A of the first contact device 18, and the second connection region 172A of the second connection device 172 is connected to the second contact region 162A of the second contact device 19. The laser diode component 1 includes a first device electrode 171B and a second device electrode 172B for making external electrical contact with the laser diode component 1, wherein the first device electrode 171B is part of the first connection device 171 and the second device electrode 172B is part of the second connection device 172.

[0153] The first connection region 171A partially laterally surrounds the second connection region 172A, as shown in connection with Figure 12AIn particular, the shape of the first connection region 171A substantially matches the shape of the first contact region 161A, except for the interruption in the region of the second device electrode 172B, in which such an interruption may be absent (see Figure 11A ). In addition, the shape of the second connection region 172A substantially matches the shape of the second contact region 162A.

[0154] The carrier 17 comprises a carrier substrate 170 formed of a material that matches the thermal expansion coefficient of the material of the semiconductor layer stack 2 (e.g. silicon, ceramic or a suitable metal material). The first connection region 171A and the second connection region 172A are arranged on the side of the carrier substrate 170 that faces the semiconductor layer stack 2. In the case that the carrier substrate 170 is electrically conductive, an isolation layer 173 may be arranged between the carrier substrate 170 and the connection means 171, 172.

[0155] The semiconductor layer stack 2 is arranged on a carrier 17 such that the second semiconductor region 5 faces the carrier 17. The carrier 17 is arranged at a rear side 1B of the laser diode component 1 facing away from the radiation exit side 1A. Device electrodes 171B, 172B are arranged at opposite side surfaces of the laser diode component 1 .

[0156] Combination Figure 16A Schematic plan view and along the Figure 15A The same line CC' shown is taken Figure 16B , depicting another exemplary embodiment of a laser diode component 1, which can be combined with Figures 1 to 14 Describe the method to manufacture.

[0157] The carrier 17 includes an electrically conductive substrate 170, which is provided for electrical connection between a second connection region 172A and a second device electrode 172B, which is arranged on a side of the carrier substrate 170 facing away from the semiconductor layer stack 2. In an exemplary embodiment, the second contact region 162A and the second connection region 172A may have the same circular shape. The first contact region 161A and the first connection region 171A may have the same annular shape. The first device electrode 171B is arranged at the side surface of the laser diode component 1, and the second device electrode 172B is arranged at the back side 1B.

[0158] Furthermore, the laser diode component 1 may have any features, characteristics and advantages mentioned in conjunction with other exemplary embodiments.

[0159] Combination Figure 17A Schematic plan view and along the Figure 15A The same line CC' shown is taken Figure 17BSchematic cross-sectional view, depicting another exemplary embodiment of the laser diode component 1, which can be manufactured by combining the Figures 1 to 14 method described.

[0160] The first connecting device 171 includes a first conductive via 171C, which passes through the carrier substrate 170 and provides an electrical connection between the first connection region 171A and the first device electrode 171B, and this first device electrode is arranged on the side of the carrier substrate 170 facing away from the semiconductor layer stack 2. Furthermore, the second connecting device 172 includes a second conductive via 172C, which passes through the carrier substrate 170 and provides an electrical connection between the second connection region 172A and the second device electrode 172B, and this second device electrode is arranged on the side of the carrier substrate 170 facing away from the semiconductor layer stack 2.

[0161] In the exemplary embodiment, the second contact region 162A and the second connection region 172A can have the same circular shape. The first contact region 161A and the first connection region 171A can have the same annular shape.

[0162] The first device electrode 171B and the second device electrode 172B are arranged at the rear side 1B.

[0163] Furthermore, the laser diode component 1 can have any features, characteristics, and advantages mentioned in connection with other exemplary embodiments.

[0164] The scope of protection of the present invention is not limited to the examples given above. The present invention resides in each novel feature and each combination of features, which particularly includes each combination of any features stated in the claims, even if such feature or combination of features is not explicitly stated in the claims or examples.

[0165] This patent application claims the priority of German Patent Application 102022131374.3, the disclosure of which is hereby incorporated by reference into the present invention.

[0166] Reference numerals

[0167] 1 Laser diode component

[0168] 1A Front side, radiation-emitting side

[0169] 1B Rear side

[0170] 2 Semiconductor layer stack

[0171] 2A First main surface

[0172] 2B Second main surface

[0173] 2C Side surface

[0174] 3 First semiconductor region

[0175] 4 Active region

[0176] 5 Second semiconductor region

[0177] 7 Insulating layer

[0178] 8 Terminal layer

[0179] 11 Dielectric layer

[0180] 12 First recess

[0181] 13 Second recess

[0182] 14 Pore

[0183] 15 Mirror layer

[0184] 17 Carrier

[0185] 18 First contact device

[0186] 19 Second contact device

[0187] 20 Isolation trench

[0188] 30 Protruding region of the first semiconductor region

[0189] 33 Unintentionally doped layer

[0190] 34 n-doped layer

[0191] 35A Cut-off angle

[0192] 70 Opening

[0193] 91 First contact layer

[0194] 92 Second contact layer

[0195] 110 First part of the dielectric layer

[0196] 111 Second part of the dielectric layer

[0197] 161 First contact pillar

[0198] 161A First contact area

[0199] 162 Second contact pillar

[0200] 162A Second contact area

[0201] 170 Carrier substrate

[0202] 171 First connection device

[0203] 171A First connection area

[0204] 171B First device electrode

[0205] 171C First via hole

[0206] 172 Second connection device

[0207] 172A Second connection area

[0208] 172B Second device electrode

[0209] 172C Second via hole

[0210] 173 Isolation layer

[0211] 2’ Semiconductor layer sequence

[0212] 2A', 2C’ Outer surface

[0213] 3’ First semiconductor layer

[0214] 4’ Active layer

[0215] 5’ Second semiconductor layer

[0216] 6’ Growth substrate

[0217] 7’ Mask layer

[0218] 8’ Terminal layer structure

[0219] 10’ Gap

[0220] 12’ First recess

[0221] 13’ Second recess

[0222] 14’ Pore

[0223] 15’ Mirror layer structure

[0224] 16’ Contact post structure

[0225] 17’ Carrier structure

[0226] 18’ First contact device structure

[0227] 19’ Second contact device structure

[0228] 30’ Protruding area of the first semiconductor layer

[0229] 31’ n-doped current spreading layer

[0230] 32’ Highly n-doped sacrificial layer

[0231] 33’ Unintentionally doped layer

[0232] 34’ n-doped layer

[0233] Upper region of 35’

[0234] Cutting angle of 35A’

[0235] Lower region of 36’

[0236] Lateral protruding region of the growth substrate of 60’

[0237] Opening of 70’

[0238] Contact layer structure of 90’

[0239] First part of 91’

[0240] Second part of 92’

[0241] First dielectric layer structure of 110’

[0242] Second dielectric layer structure of 111’

[0243] First part of 161’

[0244] First contact region of 161A’

[0245] Second part of 162’

[0246] Second contact region of 162A’

[0247] Carrier substrate structure of 170’

[0248] First connection device structure of 171’

[0249] First connection region of 171A’

[0250] Second connection device structure of 172’

[0251] Second connection region of 172A’

[0252] Thickness of D

[0253] Central axis of A

[0254] First lateral direction of L1

[0255] Second lateral direction of L2

[0256] Vertical direction of V.

Claims

1. A laser diode component (1), comprising - a semiconductor layer stack (2), comprising: - a first semiconductor region (3), - a second semiconductor region (5), and - an active region (4) for emitting laser radiation, wherein the active region (4) is arranged between the first semiconductor region (3) and the second semiconductor region (5), and wherein the first semiconductor region (3) has a protruding region (30), wherein the first semiconductor region (3) protrudes laterally beyond the active region (4) and the second semiconductor region (5), - a dielectric layer (11) covering the semiconductor layer stack (2), - a first contact device (18) for electrically contacting the first semiconductor region (3), comprising: - a first contact layer (91) covering the protruding region (30) of the first semiconductor region (3), and - a first contact post (161) arranged on a side of the first contact layer (91) facing away from the first semiconductor region (3), - a second contact device (19) for electrically contacting the second semiconductor region (5), comprising: - a terminal layer (8) partially covering the second semiconductor region (5), - a second contact layer (92) laterally surrounding the terminal layer (8), and - a second contact post (162) arranged on a side of the second contact layer (92) facing away from the second semiconductor region (5), wherein a first contact area (161A) of the first contact post (161) laterally surrounds a second contact area (162A) of the second contact post (162).

2. The laser diode component (1) according to the preceding claim, wherein, An isolation trench (20) between the first contact post (161) and the second contact post (162) has the shape of a circular ring.

3. The laser diode component according to any one of the preceding claims, wherein, Both the first contact area (161A) and the second contact area (162A) have a shape rotationally symmetric with respect to a central axis (A) of the laser diode component (1).

4. The laser diode component (1) according to any one of the preceding claims, wherein, Both the second contact layer (92) and the terminal layer (8) have a shape rotationally symmetric with respect to a central axis (A) of the laser diode component (1).

5. The laser diode component (1) according to any one of the preceding claims, the laser diode component comprising an insulating layer (7), wherein, The insulating layer (7) partially covers the second semiconductor region (5) and includes an opening (70), wherein the terminal layer (8) is arranged in the opening and contacts the second semiconductor region (5).

6. The laser diode component (1) according to the preceding claim, wherein, The second semiconductor region (5) and the active region (4) do not protrude laterally beyond the insulating layer (7).

7. The laser diode component (1) according to any one of the preceding claims, wherein, The dielectric layer (11) is at least partially arranged on all outer surfaces (2A, 2B, 2C) of the semiconductor layer stack (2).

8. The laser diode component (1) according to any one of the preceding claims, wherein, The dielectric layer (11) forms a laser resonator of the laser diode component (1).

9. The laser diode component (1) according to any one of the preceding claims, wherein, The dielectric layer (11) includes pores (14) at a side surface (2C) of the semiconductor layer stack (2).

10. A laser diode component (1) according to any one of the preceding claims, the laser diode component comprising a carrier (17), the carrier (17) comprising a first connecting means (171) and a second connecting means (172), wherein, The first connection region (171A) of the first connection device (171) is connected to the first contact region (161A) of the first contact device (18), and the second connection region (172A) of the second connection device (172) is connected to the second contact region (162A) of the second contact device (19), wherein the first connection region (171A) at least partially laterally surrounds the second connection region (172A).

11. The laser diode component (1) according to the preceding claim, wherein, The semiconductor layer stack (2) is arranged on the carrier (17) such that the second semiconductor region (5) faces the carrier (17).

12. The laser diode component (1) according to any one of the preceding two claims, the laser diode component including a first device electrode (171B) and a second device electrode (172B) for making external electrical contact with the laser diode component (1), wherein, The first device electrode (171B) is part of the first connection device (171), and the second device electrode (172B) is part of the second connection device (172).

13. The laser diode component (1) according to any one of claims 10 to 12, wherein, The laser radiation is mainly emitted on the front side (1A) of the laser diode component (1) facing away from the carrier (17).

14. The laser diode component (1) according to any one of the preceding claims, wherein, The semiconductor layer stack (2) is substantially free of a growth substrate (6').

15. A method for manufacturing a laser diode component (1) according to any one of the preceding claims, the method comprising: - providing a semiconductor layer sequence (2') for manufacturing at least one semiconductor layer stack (2), the semiconductor layer sequence (2') comprising: - a first semiconductor layer (3'), - a second semiconductor layer (5'), and - an active layer (4') for emitting laser radiation, wherein the active layer (4') is arranged between the first semiconductor layer (3') and the second semiconductor layer (5'), - applying a mask layer (7') on a part of the second semiconductor layer (5'), - applying a terminal layer structure (8') on a part of the second semiconductor layer (5') for manufacturing at least one terminal layer (8), - patterning the semiconductor layer sequence (2') through the mask layer (7') such that the first semiconductor layer (3') has at least one protruding region (30'), wherein the first semiconductor layer (3') laterally protrudes beyond the active layer (4') and the second semiconductor layer (5'), - applying a contact layer structure (90') for manufacturing at least one first contact layer (91) and at least one second contact layer (92) on the at least one protruding region (30') of the first semiconductor layer (3') and on the second semiconductor layer (5') such that the contact layer structure (90') laterally surrounds the terminal layer structure (8'), - applying a first dielectric layer structure (110') on the semiconductor layer sequence (2') to manufacture a first part (110) of at least one dielectric layer (11), - Apply a contact pillar structure (16') on the first dielectric layer structure (110'), such that a first contact region (161A) of at least one first part (161') of the contact pillar structure (16') laterally surrounds a second contact region (162A) of at least one second part (162') of the contact pillar structure (16'), where the at least one first part is configured to fabricate at least one first contact pillar (161), and the at least one second part is configured to fabricate at least one second contact pillar (162).

16. The method according to the preceding claim, wherein, - The semiconductor layer sequence (2') is disposed on a growth substrate (6') and includes a highly doped sacrificial layer (32') facing the growth substrate (6'), - In a first subsequent patterning step after patterning the second semiconductor layer (5') and the active layer (4'), pattern the first semiconductor layer (3') such that an upper region (35') and a lower region (36') are fabricated, wherein the highly doped sacrificial layer (32') terminates the lower region (36') on a side facing the growth substrate (6'), and - In a second subsequent step, pattern the lower region (36') such that the growth substrate (6') laterally protrudes beyond the lower region (36') in a laterally protruding region (60').

17. The method according to the preceding claim, comprising: - Dispose the first dielectric layer structure (110') such that the first dielectric layer structure covers the laterally protruding region (60') of the growth substrate (6') and includes pores (14') at a cut-off angle (35A') of the upper region (35'), and - Remove the highly doped sacrificial layer (32') by an etchant introduced through at least one of the pores (14'), wherein The first dielectric layer structure (110') forms a tethering structure in the laterally protruding region (60') of the growth substrate (6'), and the tethering structure holds the semiconductor layer sequence (2') to the growth substrate (6') after removing the sacrificial layer (32').

18. The method according to the preceding claim, comprising: - Apply a carrier structure (17') on a side of the semiconductor layer sequence (2') facing away from the growth substrate (6'), and - Remove the growth substrate (6') by separating the tethering structure.

19. The method according to the preceding claim, comprising: Apply a second dielectric layer structure (111') on a side of the semiconductor layer sequence (2') facing away from the carrier structure (17') to fabricate a second part (111) of the at least one dielectric layer (11).

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