Photoresist stripping method, semiconductor device and manufacturing method and system thereof

Abstract

The invention discloses a photoresist stripping method, a semiconductor device and a manufacturing method and system thereof, and the method comprises the steps: forming a photoresist layer on a wafer, the photoresist layer comprises a stripping region, and carrying out the partial exposure processing of the photoresist in the stripping region, so as to form two photoresist regions with different thicknesses, so that in the stripping process, the thickness of the photoresist can be reduced, and the yield of the photoresist is improved. Therefore, the stripping liquid can be in full contact with the photoresist through the side wall formed between the two regions with different thicknesses, so that the photoresist is quickly and effectively removed, and the yield of semiconductor devices is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and particularly to a photoresist stripping method, a semiconductor device, a manufacturing method thereof, and a system Background Art The lift-off process is a commonly used method in the manufacturing process of semiconductor devices. This method generally goes through processes such as photoresist coating, lithography, film deposition, and stripping to form the required semiconductor patterns, and then cuts them into the required semiconductor devices as needed. With the development of semiconductor technology, people have paid increasing attention to the integration density, performance, and size miniaturization of semiconductor devices. Therefore, higher requirements for each step in the manufacturing process follow

[0002] Currently, when the lift-off process removes the photoresist, there will be certain residues, which will affect the working performance of the semiconductor device finished products and even cause the finished products to fail Summary of the Invention

[0003] Embodiments of the present application provide a photoresist stripping method, a semiconductor device, a manufacturing method thereof, and a system, which can quickly and effectively remove the photoresist and improve the yield of semiconductor devices

[0004] In a first aspect, embodiments of the present application provide a photoresist stripping method, including: Form a photoresist layer with a first thickness on one surface of a wafer, and the photoresist layer includes a stripping area Perform partial exposure treatment on the photoresist in the stripping area to form at least one first exposure area and at least one first non-exposure area Perform development treatment on the photoresist in the stripping area to make the photoresist in the first exposure area and the first non-exposure area have a thickness difference Use a stripping solution to remove the photoresist in the stripping area

[0005] In a second aspect, embodiments of the present application provide a manufacturing method of a semiconductor device, including: Form a photoresist layer with a first thickness on one surface of a piezoelectric substrate, and the photoresist layer includes a semiconductor pattern area and a stripping area Use a first exposure amount and a second exposure amount to perform partial exposure treatment on the photoresist in the stripping area and the semiconductor pattern area respectively, form at least one first exposure area and at least one first non-exposure area in the stripping area, and form a second exposure area and a second non-exposure area in the semiconductor pattern area; the first exposure amount is less than the second exposure amount Develop the photoresist of the photoresist layer so that there is a thickness difference between the photoresist in the first exposure area and the first non-exposure area, and the thickness of the photoresist in one of the second exposure area and the second non-exposure area is 0 to expose the piezoelectric substrate; Deposit a metal thin film layer, which is located on the photoresist in the stripping area, on the photoresist in the semiconductor pattern area, and on the piezoelectric substrate in the semiconductor pattern area; Use a stripping solution to remove the remaining photoresist on the piezoelectric substrate and the metal thin film layer on the remaining photoresist to form a semiconductor pattern on the piezoelectric substrate.

[0006] In a third aspect, an embodiment of the present application provides a semiconductor device manufacturing system, including a lithography machine device, a coating device, and a photoresist removal device. The lithography machine device, the coating device, and the photoresist removal device cooperate to perform a photoresist stripping method provided in the first aspect, and / or the lithography machine device, the coating device, and the photoresist removal device cooperate to perform a semiconductor device manufacturing method provided in the second aspect.

[0007] In a fourth aspect, an embodiment of the present application provides a semiconductor device, which is prepared by the semiconductor device manufacturing method provided in the second aspect.

[0008] The photoresist stripping method, the semiconductor device and its manufacturing method and system provided by the embodiments of the present application form a photoresist layer on a wafer. The photoresist layer includes a stripping area. The photoresist in the stripping area is partially exposed to form two photoresist areas with different thicknesses. Thus, during the stripping process, the stripping solution can more fully contact the photoresist through the sidewalls formed between the two areas with different thicknesses, so as to quickly and effectively remove the photoresist and improve the yield of semiconductor devices. Description of the Drawings

[0009] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments of the present application. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0010] Figure 1 is a schematic structural diagram of a semiconductor device provided by an embodiment of the present application; Figure 2 is a schematic flow structure diagram of a stripping process in the related art provided by an embodiment of the present application; Figure 3It is a schematic flowchart of a photoresist stripping method provided by an embodiment of the present application; Figure 4 It is another schematic flowchart of a photoresist stripping method provided by an embodiment of the present application; Figure 5 It is yet another schematic flowchart of a photoresist stripping method provided by an embodiment of the present application; Figure 6 It is yet another schematic flowchart of a photoresist stripping method provided by an embodiment of the present application; Figure 7 It is a schematic structural diagram of a mask provided by an embodiment of the present application; Figure 8 It is a schematic flowchart of a semiconductor device manufacturing method provided by an embodiment of the present application.

[0011] Explanation of reference numerals in the drawings: 10 / 10', wafer; 20 / 20', photoresist layer; 30, stripping area; 31, first exposure area; 32, first non-exposure area; 33, mask; 34, hollow pattern; 35, non-hollow pattern; 40, semiconductor pattern area; 41, second exposure area; 42, second non-exposure area; 43, mask; 41', hollow area; 42', photoresist area; 43', mask; 50 / 20', metal thin film layer; 60 / 60', semiconductor pattern; 71, piezoelectric substrate; 72, interdigital electrode; 73, reflection structure. Detailed implementation manners

[0012] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0013] The description of the following embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the present application can be implemented. The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the described objects and do not have any sequential or technical meanings. The directional terms mentioned in the present application, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are for better and clearer description and understanding of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as a limitation to the present application.

[0014] It should be noted that the terms "include", "may include", "contain", or "may contain" used in the present application indicate the existence of the corresponding disclosed functions, operations, elements, etc., and do not limit one or more other additional functions, operations, elements, etc.

[0015] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present application belongs. The terms used in the description of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0016] When preparing semiconductor devices using a lift-off process, generally, a photoresist pattern is first formed on the surface of a wafer by a photolithography process, then one or more metal thin films are deposited on the photoresist pattern, and finally, the photoresist is dissolved by a lift-off solution and the unwanted pattern is peeled off to form a chip pattern. Usually, the smaller the size of the area covered by the photoresist, the easier it is for the lift-off solution to enter its interior, thereby quickly peeling off the unwanted photoresist and the metal thin film layer above it.

[0017] Specifically, please refer to Figure 2 , Figure 2 is a schematic flow structure diagram of the lift-off process in the related art provided by an embodiment of the present application. In the related art, first, the wafer is cleaned to remove contaminants on the surface of the wafer, improve the process quality and device performance. Then, a photoresist layer 20' is formed on the wafer 10', as shown in Fig. (a).

[0018] As shown in Figure (b), a mask 43' having a semiconductor pattern is then set above the photoresist layer 20', wherein the mask 43' includes a hollow area 41' and a photoresist area 42', wherein the hollow area 41' is mainly used to prepare semiconductor patterns, and the photoresist area 42' is an area where semiconductor patterns do not need to be prepared. After the mask 43' is set, the photoresist 20' will be exposed to light to make the photoresist 20' undergo a photochemical reaction, thereby changing the solubility of the photoresist in the developer. Since the mask 43' includes the hollow area 41' and the photoresist area 42', during the exposure process, the photoresist in the hollow area 41' will undergo a photochemical reaction, and since the photoresist area 42' is blocked by the mask 43', the solubility of the photoresist in this area will not be affected.

[0019] The mask 43' is removed, and the photoresist layer 20' is dissolved with a developer. Since the solubility of the exposed portion of the photoresist changes, part of the photoresist will be dissolved after the photoresist layer is immersed in the developer, thereby forming a structure as shown in Figure (c). The photoresist in the area corresponding to the hollow area 41' will be dissolved, thereby exposing the surface of the wafer 10'.

[0020] Based on the structure shown in Figure (c), one or more metal film layers 50' are deposited, so that a metal film layer 50' will be formed on the undissolved photoresist layer 20', and a metal film layer 50' of the same thickness will also be formed on the surface of the wafer 10' exposed after the photoresist is dissolved, as shown in Figure (d).

[0021] Finally, the entire structure is immersed in a degumming solution (also called a stripping solution) so that the stripping solution contacts the bottom photoresist layer 20' from the side, thereby being able to strip the photoresist layer 20' and the metal film layer 50' on the photoresist layer 20' from the surface of the wafer 10'.

[0022] because Figure 2 In the figure, the size of the photoresist in the area corresponding to the photoresist area 42' on the wafer 10' is relatively large, and the photoresist is covered by the metal film layer 50'. The stripping liquid can only contact the photoresist from the edge of the area and gradually enter the central area. If the stripping liquid does not contact the photoresist sufficiently, there will be residue. It takes a long time to fully contact. Therefore, it is difficult to quickly strip off the unnecessary photoresist, which easily leads to stripping residue defects. As shown in Figure (e), there is residual photoresist 21' and metal film layer 50' on the photoresist 21' on the right side, which will cause product failure.

[0023] Of course, in other cases, even if the photoresist is small in size, if the immersion time in the stripping solution is insufficient, resulting in insufficient contact with the stripping solution, there will be defects such as stripping residues.

[0024] Therefore, the embodiments of the present application provide a method for stripping photoresist, a semiconductor device, a manufacturing method thereof, and a system, which can quickly remove the redundant photoresist without residue, thereby improving the success rate of manufacturing semiconductor devices.

[0025] In the embodiments of the present application, the semiconductor device is a microelectromechanical system (MEMS) device, including an MEMS accelerometer, an MEMS microphone, a micromotor, a micropump, a micro-oscillator, an MEMS optical sensor, an MEMS pressure sensor, an MEMS gyroscope, an MEMS humidity sensor, an MEMS gas sensor, a surface acoustic wave device, etc., and the embodiments of the present application do not make specific limitations.

[0026] The surface acoustic wave device includes, but is not limited to, a surface acoustic wave resonator, a longitudinal coupled surface acoustic wave filter, a surface acoustic wave filter formed by connecting multiple surface acoustic wave resonators and / or longitudinal coupled surface acoustic wave filters in series and parallel, etc., devices with interdigital electrodes provided on a piezoelectric substrate. Among them, the surface acoustic wave resonator can be a normal surface acoustic wave resonator (Normal-SAW), a temperature-compensated surface acoustic wave resonator (TC-SAW), or a thin film surface acoustic wave resonator with a multi-layer substrate structure, or a laterally excited thin film bulk acoustic wave resonator, etc., and the embodiments of the present application do not make specific limitations.

[0027] Among them, please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a semiconductor device provided by the embodiments of the present invention. The embodiments of the present application will be described in detail by taking the surface acoustic wave device as an example. Figure 1 The shown surface acoustic wave resonator includes a piezoelectric substrate 71, an interdigital electrode 72 provided on one side of the piezoelectric substrate 71, and two reflection structures 73, and the interdigital electrode 72 is located between the two reflection structures 73.

[0028] The embodiments of the present application provide a method for stripping photoresist. Please refer to Figure 3 , Figure 5 and Figure 6 , Figure 3 , Figure 5 and Figure 6 are all flow diagrams of the method for stripping photoresist provided by the embodiments of the present application. As shown in Figure 3 , Figure 5 and Figure 6 shown, the embodiments of the present application can quickly and effectively remove the photoresist on the wafer through the following steps.

[0029] S11. Form a photoresist layer with a first thickness on one surface of the wafer, and the photoresist layer includes a stripping area.

[0030] In the embodiments of the present application, the wafer 10 can also be referred to as a chip or a substrate. The main materials used are single-crystalline silicon, polycrystalline silicon, aluminum oxide, silicon oxide, silicon nitride, aluminum nitride, silicon carbide, and quartz, etc. Exemplarily, the wafer 10 can be a piezoelectric substrate 71, which can be a single-layer structure or a multi-layer structure. For example, the piezoelectric substrate 71 can be made of piezoelectric materials such as lithium niobate (LN), lithium tantalate (LT), aluminum nitride (AIN), lead zirconate titanate piezoelectric ceramics (PZT), and nano-zinc oxide (ZnO). Or, the piezoelectric substrate 71 can be a lithium niobate piezoelectric wafer (LN), a lithium tantalate piezoelectric wafer (LT), or a piezoelectric bonding wafer (POI), etc.

[0031] As Figure 5 shown in FIG. (a), the photoresist layer 20 includes a stripping region 30, and the stripping region 30 can be understood as the region where the photoresist needs to be removed.

[0032] In a specific embodiment, the photoresist layer 20 further includes a semiconductor pattern region 40, and the semiconductor pattern region 40 can be understood as the region where the metal pattern of the semiconductor device is formed. The stripping region 30 can be understood as the region other than the semiconductor pattern region 40.

[0033] In a specific embodiment, the stripping region 30 can be a reserved region used for testing during the process, such as testing whether the thickness of each layer meets the requirements. The area occupied by the reserved region is relatively large.

[0034] Exemplarily, the area of the stripping region 30 exceeds 20% of the area of the semiconductor pattern region 40. In this application scenario, usually a metal thin film is covered on the photoresist. Therefore, during the stripping process, the contact area between the stripping liquid and the photoresist in the stripping region 30 accounts for a relatively small proportion of the overall area of the stripping region 30. If through Figure 2 the related technologies shown, it takes a long time to remove the photoresist, and it is easier to have the situation of photoresist residue. Therefore, through the stripping method provided by the embodiments of the present application, the photoresist in the stripping region 30 can be removed quickly and effectively.

[0035] Preferably, the area of the stripping region 30 exceeds 30% of the area of the semiconductor pattern region 40. In this application scenario, through the stripping method provided by the embodiments of the present application, it is more conducive to quickly and effectively removing the photoresist and improving the product yield.

[0036] It can be understood that the region where the photoresist needs to be stripped can be one or multiple. In the embodiments of the present application, the stripping region 30 can refer to a single region or a collective term for multiple regions, and the embodiments of the present application do not make any limitations.

[0037] It can be understood that the semiconductor pattern region 40 can refer to the metal pattern region forming a single semiconductor device, or can be a general term for the metal pattern regions forming multiple semiconductor devices, and the embodiments of the present application do not make limitations in this regard.

[0038] In another specific embodiment, the stripping region 30 can also be the region between semiconductor metal patterns, and the embodiments of the present application do not make specific limitations in this regard.

[0039] It can be understood that the photoresist layer can use positive photoresist, negative photoresist, or other types of photoresist, and the embodiments of the present application do not make specific limitations in this regard.

[0040] S12. Perform partial exposure treatment on the photoresist in the stripping region to form at least one first exposure region and at least one first non-exposure region.

[0041] In a specific embodiment, performing partial exposure treatment on the photoresist in the stripping region to form at least one first exposure region and at least one first non-exposure region includes: Cover the stripping region 30 with a mask 33. The mask 33 includes a hollow pattern 34 and a non-hollow pattern 35. The photoresist in the stripping region 30 is partially exposed within the hollow pattern; perform exposure treatment on the photoresist in the stripping region 30. The photoresist exposed within the hollow pattern 34 forms at least one first exposure region 31, and the photoresist covered by the non-hollow pattern 35 forms at least one first non-exposure region 32.

[0042] Specifically, the photoresist can be exposed through a lithography machine device. Before performing partial exposure treatment on the photoresist in the stripping region 30, an auxiliary pattern needs to be designed. This pattern can be a dense line pattern, an S-shaped pattern, etc., and the embodiments of the present application do not make limitations in this regard.

[0043] It can be understood that the auxiliary pattern is mainly formed on the mask 33, so that the mask 33 has a hollow pattern 34 and a non-hollow pattern 35. As Figure 7 shown, it is a schematic structural diagram of a mask provided by the embodiments of the present application. In Figure 7 (a), the auxiliary pattern of the mask 33, that is, the pattern formed by the hollow pattern 34, is S-shaped. In Figure 7 (b), the pattern formed by the hollow pattern 34 of the mask 33 is a line pattern. Of course, the pattern formed by the hollow pattern 34 of the mask 33 can also be other regular or irregular patterns, and the embodiments of the present application do not make limitations in this regard.

[0044] Among them, the mask 33 can be made of metal materials such as Cr, or non-metal materials. The material used for the mask 33 can block light, so that the photoresist blocked by the mask 33 will not undergo a photochemical reaction during the exposure process, which will affect the solubility of the photoresist in the developer.

[0045] In the embodiment of the present application, after the mask 33 is covered on the stripping area 30, the non-hollow pattern 35 of the mask 33 can block the photoresist of the photoresist layer 20, and the hollow pattern 34 will expose the photoresist of the photoresist layer 20. Therefore, when the photoresist layer 20 in the stripping area 30 is exposed to light, the solubility of the photoresist blocked by the non-hollow pattern 35 remains unchanged in the developer, forming the first non-exposed area 32, and the photoresist exposed by the hollow pattern 34, due to the influence of light, changes its solubility in the developer, thus forming the first exposed area 31, as Figure 5 shown in Figure (b) below.

[0046] Specifically, in the embodiment of the present application, the photoresist layer 20 in the stripping area 30 is exposed with a first exposure amount.

[0047] It can be understood that the exposure amount is positively correlated with the light intensity and the exposure time. When the light intensity is constant, the longer the exposure time, the greater the exposure amount. When the exposure time is constant, the greater the light intensity, the greater the exposure amount. During the development process, if it is necessary to completely dissolve the photoresist layer 20, the greater the thickness of the photoresist layer 20, the greater the required exposure amount.

[0048] Therefore, in the embodiment of the present application, the first exposure amount is less than the normal exposure amount required to completely change the solubility of the photoresist of the photoresist layer 20 with the first thickness, so that after the development process, all the photoresist in the stripping area 30 can still be retained.

[0049] Exemplarily, the first exposure amount is 50%-90% of the normal exposure amount required to completely change the solubility of the photoresist of the photoresist layer 20 with the first thickness, and can be, for example, 50%, 60%, 70%, 80%, 90%, which is beneficial to controlling the thickness of the photoresist in the stripping area 30.

[0050] Exemplarily, the first exposure amount is 60%-80% of the normal exposure amount required to completely change the solubility of the photoresist of the photoresist layer 20 with the first thickness, and can be, for example, 60%, 65%, 70%, 75%, 80%. It can be more beneficial to controlling the thickness of the photoresist, so that all the photoresist in the stripping area 30 can be retained, avoiding the complete dissolution of some of the photoresist in the stripping area 30 during the development process due to overexposure, thereby avoiding product failure caused by subsequent coating processes.

[0051] In a feasible implementation, in at least one direction within the plane where the photoresist layer 20 is located, the first exposure regions 31 and the first non-exposure regions 32 are alternately arranged.

[0052] Specifically, as Figure 7 shown, in the X direction, the hollow patterns 34 of the mask 33 divide the mask 33 into multiple pieces, such that the hollow parts and the non-hollow parts are alternately arranged. Therefore, when the mask 33 is covered on the photoresist within the stripping region 30, the photoresist layer will be divided into one or more first exposure regions 31 and one or more first non-exposure regions 32, so that the first exposure regions 31 and the first non-exposure regions 32 are also alternately arranged in the X direction, as Figure 6 shown in FIGS. (b) and (c).

[0053] Optionally, the first exposure regions 31 and the first non-exposure regions 32 can also be alternately arranged in the Y direction, or in any one or more directions between the X direction and the Y direction, and the embodiments of the present application do not make specific limitations.

[0054] Exemplarily, the first exposure regions 31 can be set as rectangles, so that in the X direction or the Y direction, the first exposure regions 31 and the first non-exposure regions 32 are alternately arranged. The first exposure regions 31 can be set as squares, so that in both the X direction and the Y direction, the first exposure regions 31 and the first non-exposure regions 32 are alternately arranged.

[0055] In the implementation of the present application, the alternate arrangement of the first exposure regions 31 and the first non-exposure regions 32 can cause the photoresist within the stripping region 30 to form steps after development, which can increase the exposed area of the photoresist, thereby increasing the contact area between the stripping solution and the photoresist during the subsequent stripping process, and being more conducive to quickly and effectively stripping the photoresist without forming residual defects.

[0056] It should be noted that, when the area of the stripping region 30 is fixed, the more the number of alternate arrangements of the exposure regions 31 and the first non-exposure regions 32, the more conducive to the immersion of the stripping solution, so that the photoresist can be more effectively removed in a shorter time, and the stripping efficiency of the photoresist is improved.

[0057] Certainly, when the stripping region 30 is small, only one first exposure region 31 can also be formed, such that the first non-exposure regions 32 surround the first exposure region 31. In the embodiments of the present application, the number of the first exposure regions 31 and the first non-exposure regions 32 can be set according to parameters such as the size of the stripping region 30, the resolution of the photoresist used in the photoresist layer, and the first thickness of the photoresist layer, etc., and the embodiments of the present application do not make specific limitations.

[0058] In a feasible implementation, the photoresist of the photoresist layer is a positive photoresist, and the edge of the stripping area is the first non-exposed area.

[0059] Specifically, when the photoresist of the photoresist layer 20 is a positive photoresist, if the photoresist is exposed, the solubility of the photoresist in the developer will be changed, making it easy to be developed during the development process, while the unexposed photoresist is not easily developed. Therefore, when designing the mask 33, the hollow pattern is designed at a position close to the middle, and a part of the non-hollow pattern is designed on the periphery, as Figure 7 shown. As a result, after the exposure process, a part of the first non-exposed area 32 surrounds the edge of the stripping area 30, and the first exposed area 31 and another part of the first non-exposed area 32 are alternately arranged at a position relatively close to the middle, as Figure 6 shown in (b) of

[0060] In the embodiment of the present application, through this setting, the photoresist to be developed can have a certain distance from the outside of the stripping area 30, which can play a certain buffering role during the development process and is not easy to dissolve the photoresist outside the stripping area 30, thereby improving the product yield.

[0061] In a feasible implementation, the photoresist of the photoresist layer is a negative photoresist, and the edge of the stripping area is the first exposed area.

[0062] Specifically, when the photoresist of the photoresist layer 20 is a negative photoresist, if the photoresist is exposed, the solubility of the photoresist in the developer will be changed, making it not easy to be developed during the development process, while the unexposed photoresist is easy to be developed. Therefore, when designing the mask 33, the non-hollow pattern is designed at a position close to the middle, and a part of the hollow pattern is designed on the periphery, so that after the exposure process, a part of the first exposed area 31 surrounds the edge of the stripping area 30, and the first non-exposed area 32 and another part of the first exposed area 31 are alternately arranged at a position relatively close to the middle.

[0063] In the embodiment of the present application, through this setting, the photoresist to be developed can have a certain distance from the outside of the stripping area 30, which can play a certain buffering role during the development process and is not easy to dissolve the photoresist outside the stripping area 30, thereby improving the product yield.

[0064] In a feasible implementation, the width d1 of the first exposed area 31 and the width d2 of the first non-exposed area 32 are respectively 2-5 times the resolution of the photoresist of the photoresist layer.

[0065] Specifically, the resolution of the photoresist can be understood as the minimum line width that the photoresist can achieve. Different types of photoresists have different resolutions.

[0066] Exemplarily, if the minimum line width that a certain type of photoresist can achieve is 1 micrometer (μm), then the width d1 of the first exposure area 31 can be 2 μm - 5 μm, and the width d2 of the first non-exposure area 32 can also be 2 μm - 5 μm.

[0067] In a specific embodiment, as shown in Figure 6 Figures (b) and (c) below, in the X direction where the first exposure areas 31 and the first non-exposure areas 32 are alternately arranged, the widths d1 between the respective first exposure areas 31 can be equal or unequal; the widths d2 between the respective first non-exposure areas 32 can be equal or unequal; the width d1 of the first exposure area 31 and the width d2 of the first non-exposure area 32 can be equal or unequal, and the embodiments of the present application do not make specific limitations.

[0068] In a preferred embodiment, the width d1 of the first exposure area 31 is equal to the width d2 of the first non-exposure area 32.

[0069] With this setting, during the exposure process of the photoresist layer 20 in the stripping area 30, it is beneficial to better control the exposure amount, making the exposure more uniform, so that the thickness of the photoresist between the respective first exposure areas 31 or the thickness of the photoresist between the respective second non-exposure areas 32 after the development process can be basically the same, and it will not cause the photoresist in some areas to be completely developed and expose the surface of the wafer 10, improving the product yield.

[0070] S13. Develop the photoresist in the stripping area to make the photoresist in the first exposure area and the first non-exposure area have a thickness difference.

[0071] In the embodiments of the present application, developing the photoresist in the stripping area 30 means dissolving the unnecessary photoresist after the exposure process. Usually, a developer is used to dissolve the photoresist, and in special cases, ultrasonic development and other methods are used for development. Specifically, the photoresist can be developed through a lithography machine device.

[0072] In the embodiments of the present application, after developing the photoresist in the stripping area, photoresist remains in the entire stripping area 30. Specifically, the thickness of the photoresist in the first exposure area 31 can be less than the thickness of the photoresist in the first non-exposure area 32, or the thickness of the photoresist in the first exposure area 31 can be greater than the thickness of the photoresist in the first non-exposure area 32, so that a stepped shape with high and low undulations is formed between the photoresist in the first exposure area 31 and the photoresist in the first non-exposure area 32, and the embodiments of the present application do not make limitations.

[0073] It can be understood that in the first exposure area 31 and the first non-exposure area 32, the one with a larger photoresist thickness can be equal to the first thickness of the photoresist layer 20 or less than the first thickness. The embodiments of the present application do not make any limitations in this regard.

[0074] In a specific embodiment, after developing the photoresist in the stripping area 30, the photoresist in the first exposure area 31 has a second thickness, and the photoresist in the first non-exposure area 32 has a third thickness. One of the second thickness and the third thickness is equal to the first thickness, and the other is greater than 0 and less than the first thickness.

[0075] Specifically, as Figure 5 shown in Figure (c), since the first exposure dose used in the stripping area 30 is less than the normal exposure dose, during the developing process, the developer will dissolve a part of the thickness of the photoresist, causing the photoresist in the stripping area 30 to form a stepped shape with high and low undulations. That is to say, the photoresist in one of the first exposure area 31 and the first non-exposure area 32 will be partially dissolved by the developer, thus retaining a certain thickness of the photoresist, while the photoresist in the other area will not be dissolved and its thickness remains unchanged.

[0076] It can be understood that sidewalls are formed between the high-step area and the low-step area. These sidewalls can significantly increase the channels for the stripping liquid to enter the area covered by the photoresist (i.e., increase the contact area with the stripping liquid), thereby enabling the rapid stripping of the photoresist and eliminating abnormal pattern residues.

[0077] Exemplarily, the photoresist of the photoresist layer 20 is a positive photoresist. After developing the photoresist in the stripping area, the third thickness of the photoresist in the first non-exposure area 32 is equal to the first thickness, and the second thickness of the photoresist in the first exposure area 31 is greater than 0 and less than the first thickness.

[0078] Specifically, in the case where the photoresist of the photoresist layer 20 is a positive photoresist, when the photoresist in the stripping area 30 is partially exposed, since part of the photoresist of the photoresist layer 20 is blocked by the mask 33, when the first exposure amount is used for exposure, the solubility of the photoresist blocked by the mask 33 (the photoresist in the first non-exposure area 32) will not change, while the solubility of the photoresist not blocked by the mask 33 (the photoresist in the first exposure area 31) will change, making it easier to dissolve in the developer. Therefore, during the development process, the photoresist in the first exposure area 31 will be dissolved, while the photoresist in the first non-exposure area 32 will not be dissolved, so that the third thickness of the photoresist in the first non-exposure area 32 remains equal to the original first thickness of the photoresist layer 20, and the second thickness of the photoresist in the first exposure area 31 is less than the original first thickness of the photoresist layer 20.

[0079] Furthermore, since the first exposure amount is less than the normal exposure amount, the photoresist in the first exposure area 31 will not be completely dissolved during the development process. Therefore, in the case where the photoresist is a positive photoresist, after the development process, there is a thickness difference between the photoresist in the first exposure area 31 and the photoresist in the first non-exposure area 32. In the case where the first exposure area 31 and the first non-exposure area 32 are alternately arranged, the photoresist in the stripping area 30 will present an undulating step shape after development, such as Figure 5 As shown in Figure (c).

[0080] Exemplarily, the photoresist of the photoresist layer 20 is a negative photoresist, the second thickness of the photoresist in the first exposure area 31 is equal to the first thickness, and the third thickness of the photoresist in the first non-exposure area 32 is greater than 0 and less than the first thickness.

[0081] Specifically, in the case where the photoresist of the photoresist layer 20 is a negative photoresist, when the photoresist in the stripping area 30 is partially exposed, since part of the photoresist of the photoresist layer 20 is blocked by the mask 33, when the first exposure amount is used for exposure, the solubility of the photoresist blocked by the mask 33 (the photoresist in the first non-exposure area 32) will not change, while the solubility of the photoresist not blocked by the mask 33 (the photoresist in the first exposure area 31) will change, making it difficult to be dissolved in the developer. Therefore, during the development process, the photoresist in the first non-exposure area 32 will be dissolved, while the photoresist in the first exposure area 31 will not be dissolved, so that the second thickness of the photoresist in the first exposure area 31 remains equal to the original first thickness of the photoresist layer 20, and the third thickness of the photoresist in the first non-exposure area 32 is less than the original first thickness of the photoresist layer 20.

[0082] Furthermore, since the first exposure dose is less than the normal exposure dose, during the development process, not all of the photoresist in the first non-exposed area 32 will be dissolved. Therefore, when the photoresist is a negative photoresist, after the development process, there is a thickness difference between the photoresist in the first exposed area 31 and the photoresist in the first non-exposed area 32. When the first exposed areas 31 and the first non-exposed areas 32 are alternately arranged, the photoresist in the stripping area 30 will present a stepped shape with ups and downs after development, which is not shown in the figure.

[0083] In the embodiment of the present application, a stepped shape with ups and downs is formed between the photoresist in the first exposed area 31 and the photoresist in the first non-exposed area 32, thereby increasing the surface area of the photoresist in the stripping area 30. Even in the process of depositing a metal thin film, the side walls of the steps formed by the photoresist in the stripping area 30 will not be covered by the metal thin film, thereby increasing the contact area between the photoresist and the stripping solution, which is beneficial to quickly and effectively strip the photoresist in this area. When the size of the stripping area 30 is relatively large, the stripping method provided by the embodiment of the present application has a significant effect.

[0084] In a feasible implementation manner, the smaller of the second thickness and the third thickness is defined as h, and the larger of the second thickness and the third thickness is defined as H, and h is 10%-50% of H.

[0085] Specifically, when the photoresist in the photoresist layer 20 is a positive photoresist, the second thickness of the photoresist in the first exposed area 31 is less than the third thickness of the photoresist in the first non-exposed area 32. Then the second thickness is defined as h and the third thickness is defined as H. Therefore, after the development process, the second thickness can be 10%-50% of the third thickness, for example, it can be 10%, 20%, 30%, 40%, 50%, etc. When the photoresist in the photoresist layer 20 is a negative photoresist, the second thickness of the photoresist in the first exposed area 31 is greater than the third thickness of the photoresist in the first non-exposed area 32. Then the third thickness is defined as h and the second thickness is defined as H. Therefore, after the development process, the third thickness can be 10%-50% of the second thickness, for example, it can be 10%, 20%, 30%, 40%, 50%, etc.

[0086] It can be understood that during the process of exposing the photoresist in the stripping area 30 with the first exposure dose, if the first exposure dose is 50% of the normal exposure dose, correspondingly, after the development process, h is 50% of H; if the first exposure dose is 70% of the normal exposure dose, correspondingly, after the development process, h is 30% of H; if the first exposure dose is 90% of the normal exposure dose, correspondingly, after the development process, h is 10% of H.

[0087] In the embodiment of the present application, by controlling the first exposure dose, it is possible to control the thickness of the smaller one of the photoresist thicknesses in the first exposure area 31 and the first non-exposure area 32 after the development process, which is beneficial to forming a stepped shape with undulations in the stripping area 30, so as to quickly and effectively strip the photoresist in the stripping area 30 and reduce the generation of defective products.

[0088] It should be noted that for the smaller one of the photoresist thicknesses in the first exposure area 31 and the first non-exposure area 32, if the photoresist thickness is too small, there will be insufficient remaining photoresist and it is easy to be completely developed. If the photoresist thickness is too large, an effective sidewall cannot be formed, and the stripping liquid cannot smoothly enter the middle part of the stripping area 30 during the stripping process, so the photoresist cannot be quickly and effectively stripped.

[0089] Preferably, the smaller value h of the second thickness and the third thickness is 20%-40% of the larger value H of the second thickness and the third thickness. By controlling the first exposure dose, the thickness difference between the photoresists in the first exposure area 31 and the second exposure area 32 can be controlled within a reasonable range, which is beneficial to process operation and reduces process difficulty while achieving rapid and effective stripping of the photoresist in the stripping area 30.

[0090] In a feasible embodiment, there is a sidewall between the photoresist in the first exposure area and the photoresist in the first non-exposure area after the development process, and the angle between the sidewall and the plane where the surface of the wafer is located is greater than or less than 90°.

[0091] Specifically, after the photoresist in the stripping area 30 is developed, a thickness difference is formed between the photoresists in the first exposure area 31 and the first non-exposure area 32, so as to form a sidewall at the boundary between the two areas, enabling the stripping liquid to contact the photoresist at the sidewall position, increasing the contact area between the stripping liquid and the photoresist during the stripping process, and thus being beneficial to quickly and fully stripping a relatively large-sized photoresist.

[0092] In the embodiment of the present application, the angle between the sidewall and the plane where the surface of the wafer is located can be an acute angle, an obtuse angle or a right angle.

[0093] Preferably, the angle between the sidewall and the plane where the surface of the wafer is located is greater than or less than 90 degrees, that is, an acute angle or an obtuse angle, so as to form an inclined sidewall from the photoresist in the first non-exposure area 32 to the photoresist in the first exposure area 31, which is more beneficial for the contact of the stripping liquid.

[0094] Preferably, as Figure 5As shown in FIGS. (c) and (d), the photoresist in the first non-exposed area 32 forms an inverted trapezoid, that is, the side walls extend towards the first non-exposed area 32. Even when the metal thin film layer 50 covers the surface of the photoresist in the subsequent coating process, there will still be a certain gap between the metal thin film layer and the side walls, which is conducive to the stripping liquid entering the gap to contact the photoresist, so as to better strip the photoresist.

[0095] S14. Use a stripping liquid to remove the photoresist in the stripping area.

[0096] In the embodiments of the present application, the stripping liquid, also known as the photoresist remover, can dissolve the photoresist and remove other structures above the photoresist while dissolving the photoresist. Specifically, the photoresist on the wafer 10 can be stripped by a photoresist removal device.

[0097] As Figure 6 shown in FIG. (d), the photoresist in the stripping area 30 forms a stepped structure with undulations. The stripping liquid can not only enter the bottom of the photoresist layer 30 from the edge of the stripping area 30, but also contact the photoresist layer on the side walls between the high-step area and the low-step area, so as to increase the contact area with the photoresist layer, and can quickly immerse the photoresist in the middle position of the stripping area 30. Therefore, during the stripping process, not only can the photoresist in the stripping area 30 be quickly stripped, but also the problem of stripping residue caused by the large size of the stripping area 30 can be solved, and the product yield can be improved.

[0098] In the embodiments of the present application, by forming a photoresist layer on the wafer, the photoresist layer includes a stripping area, and the photoresist in the stripping area is partially exposed to form two photoresist areas with different thicknesses, so that during the stripping process, the stripping liquid can contact the photoresist more fully through the side walls formed between the two areas with different thicknesses, so as to quickly and effectively remove the photoresist and improve the yield of semiconductor devices.

[0099] The embodiments of the present application also provide a method for stripping photoresist. Please refer to Figure 4 、 Figure 5 and Figure 6 , Figure 4 、 Figure 5 and Figure 6 are all flow diagrams of the method for stripping photoresist provided by the embodiments of the present application. As Figure 4 、 Figure 5 and Figure 6 shown, the embodiments of the present application can quickly and effectively remove the photoresist on the piezoelectric substrate through the following steps.

[0100] S21. Form a photoresist layer with a first thickness on one surface of the piezoelectric substrate, and the photoresist layer includes a semiconductor pattern area and a stripping area.

[0101] S22. Partially expose the photoresist within the stripping region to form at least one first exposure region and at least one first non-exposure region.

[0102] S23. Develop the photoresist within the stripping region so that there is a thickness difference between the photoresist in the first exposure region and the first non-exposure region.

[0103] In the embodiments of the present application, for the specific steps of S21 - S23, reference may be made to the relevant descriptions of steps S11 - S13 in the previous embodiment, and details are not elaborated herein.

[0104] S24. Partially expose the photoresist within the semiconductor pattern region to form a second exposure region and a second non-exposure region.

[0105] In the embodiments of the present application, the photoresist within the stripping region 30 is partially exposed using a first exposure dose, and the photoresist within the semiconductor pattern region 40 is partially exposed using a second exposure dose.

[0106] It can be understood that the second exposure dose is the normal exposure dose required to completely change the solubility of the photoresist in the photoresist layer 20 with a first thickness. If the photoresist used in the photoresist layer 20 is a positive photoresist, then after the developing process, the exposed photoresist will be completely dissolved by the developer, while the thickness of the unexposed photoresist remains unchanged; if the photoresist is a negative photoresist, then after the developing process, the unexposed photoresist will be completely dissolved by the developer, while the thickness of the exposed photoresist remains unchanged.

[0107] It should be noted that the second exposure dose is the normal exposure dose mentioned in the previous embodiment. Specifically, the first exposure dose is less than the second exposure dose. It can be understood that for the specific values of the first exposure dose, the second exposure dose, and the relationship between the first exposure dose and the second exposure dose, reference may be made to the previous embodiment, and details are not elaborated in the embodiments of the present application.

[0108] In the embodiments of the present application, as Figure 6 shown, a mask plate 43 is covered on the semiconductor pattern region 40. The mask plate 43 includes a hollow pattern and a non-hollow pattern. The photoresist within the semiconductor pattern region 40 is partially exposed within the hollow pattern; the photoresist within the semiconductor pattern region 40 is exposed, and the photoresist exposed within the hollow pattern forms a second exposure region 41, and the photoresist covered by the non-hollow pattern forms a second non-exposure region 42.

[0109] Among them, the mask plate 43 can be made of a metal material such as Cr, or a non-metal material. The material used for the mask plate 43 can block light, so that the photoresist blocked by the mask plate 43 will not have a photochemical reaction during the exposure process, which will affect the solubility of the photoresist in the developer.

[0110] It can be understood that the pattern formed by the hollow pattern of the photomask 43 is the pattern of the semiconductor device to be fabricated.

[0111] S25. Develop the photoresist in the semiconductor pattern region so that the thickness of the photoresist in one of the second exposure region and the second non-exposure region is 0 to expose the piezoelectric substrate, and the thickness of the photoresist in the other of the second exposure region and the second non-exposure region is equal to the first thickness.

[0112] In a specific embodiment, when the photoresist in the photoresist layer 20 is a positive photoresist, after the photoresist in the second exposure region 41 of the semiconductor pattern region 40 is exposed, during the development process, the photoresist in the second exposure region 41 will be completely dissolved by the developer, and the thickness of the photoresist in this region is 0, thereby exposing the piezoelectric substrate at the bottom of the photoresist layer 20, while the thickness of the photoresist in the second non-exposure region 42 remains unchanged and is the first thickness.

[0113] In another specific embodiment, when the photoresist in the photoresist layer 20 is a negative photoresist, after the photoresist in the second non-exposure region 42 of the semiconductor pattern region 40 is exposed, during the development process, the photoresist in the second non-exposure region 42 will be completely dissolved by the developer, and the thickness of the photoresist in this region is 0, thereby exposing the piezoelectric substrate at the bottom of the photoresist layer 20, while the thickness of the photoresist in the second exposure region 41 remains unchanged and is the first thickness.

[0114] After the photoresist in the semiconductor pattern region 40 is exposed with the second exposure dose, the shape shown in FIG. (c) in Figure 5 and Figure 6 is formed in the photoresist layer 20. Figure 5 and Figure 6 Both take the positive photoresist as an example. The photoresist in the second exposure region 41 is completely dissolved, the thicknesses of the first non-exposure region 32 and the second non-exposure region 42 remain unchanged, and the thickness of the photoresist in the first exposure region 31 decreases.

[0115] It should be noted that the exposure and development of the photoresist in the semiconductor pattern region 40 (i.e., steps S24 and S25) and the exposure and development of the photoresist in the stripping region 30 (i.e., steps S22 and S23) can be carried out simultaneously, as shown in Figure 5 and Figure 6 , or can be carried out in sequence, which is not limited in the embodiments of the present application.

[0116] For example, different exposure amounts can be used to simultaneously expose the photoresist in the semiconductor pattern region 40 and the stripping region 30 respectively, and after the exposure treatment, the two regions are developed simultaneously; for another example, the photoresist in the stripping region 30 can be exposed first, then the photoresist in the semiconductor pattern region 40 can be exposed, and finally the two regions are developed simultaneously, or the order of the exposure treatment is exchanged; for yet another example, the photoresist in the stripping region 30 can be exposed and developed in sequence first, and then the semiconductor pattern region 40 can be exposed and developed.

[0117] S26. Deposit a metal thin film layer, which is located on the photoresist in the stripping region, on the photoresist in the semiconductor pattern region, and on the piezoelectric substrate in the semiconductor pattern region.

[0118] In the embodiments of the present application, a metal thin film layer 50 can be deposited through a coating device to fabricate the semiconductor metal pattern required for the semiconductor device. It can be understood that the metal thin film layer 50 can be a single layer or multiple layers, and the embodiments of the present application do not make any limitations.

[0119] Among them, the material of the metal thin film layer 50 can be single-metal materials such as Cu, Al, Pt, Cr, or alloy materials mainly composed of the above metal elements, and the embodiments of the present application do not make any limitations.

[0120] Please refer to Figure 5 Figure (d) in Figure 6 Figure (d) in, deposit a metal thin film layer 50 above the wafer 10 (piezoelectric substrate) so that the metal thin film layer 50 is respectively on the piezoelectric substrate in the second exposure region 41 of the semiconductor pattern region 40, on the photoresist in the second non-exposure region 42 of the semiconductor pattern region 40, and on the photoresist in the first exposure region 31 and the first non-exposure region 32 of the stripping region 30.

[0121] In a feasible implementation manner, the thickness of the metal thin film layer is 20%-30% of the first thickness.

[0122] Specifically, the thickness of the metal thin film layer 50 can be 20%, 24%, 27%, 30% of the first thickness of the photoresist layer 20. Preferably, the thickness of the metal thin film layer 50 can be 23%, 25%, 28% of the first thickness of the photoresist layer 20. The embodiments of the present application do not make any limitations.

[0123] In the embodiments of the present application, if the metal thin film layer 50 is too thick, during the coating process, after the metal thin film layer 50 is deposited on the surface of the photoresist layer 20, it is easy to have a certain blockage on the sidewall between the photoresist in the first exposure region 31 and the photoresist in the first non-exposure region 32, thus affecting the contact between the stripping solution and the sidewall of the photoresist. If the metal thin film layer 50 is too thin, it will affect the performance of the semiconductor device.

[0124] It is understandable that the thickness of the metal thin film layer 50 is determined by the performance of the manufactured semiconductor device. Therefore, when the thickness of the metal thin film layer 50 is fixed, the thickness relationship between the two can be adjusted by adjusting the first thickness of the photoresist layer 20.

[0125] S27. Use a stripping solution to remove the remaining photoresist on the piezoelectric substrate and the metal thin film layer on the remaining photoresist, so as to form a semiconductor pattern on the piezoelectric substrate.

[0126] Among them, when using the stripping solution to remove all the photoresist, the metal thin film layer 50 covering the photoresist will also be stripped together, and only the metal thin film layer 50 located in the second exposure area 41 of the semiconductor pattern area 40 is retained. The retained metal thin film layer forms a semiconductor pattern. After subsequent cutting processing, the required semiconductor device is formed.

[0127] It is understandable that after the cutting process, it can be a single semiconductor device formed, or multiple semiconductor devices can be formed. The embodiments of the present application do not make limitations.

[0128] In the embodiments of the present application, after depositing the metal thin film layer 50, during the process of using the stripping solution to remove the photoresist on the piezoelectric substrate, the stripping solution can contact the photoresist on the piezoelectric substrate from different positions. Specifically, after being immersed in the stripping solution, as Figure 5 shown by the arrow in Figure (d) below, in the semiconductor pattern area 40 and the stripping area 30, the stripping solution can contact the photoresist from the side. In particular, by setting a stepped shape with high and low undulations in the stripping area 30, the contact area between the photoresist and the stripping solution is increased. Therefore, when stripping the photoresist, no photoresist residue will be formed on the piezoelectric substrate, and the metal thin film layer on the photoresist will also be stripped together, as shown in Figure (e).

[0129] In the embodiments of the present application, during the process of manufacturing a semiconductor device, in the area where a semiconductor pattern does not need to be formed, partial exposure treatment is performed on the photoresist layer in this area, so that the photoresist in this area forms a stepped shape with high and low undulations, thereby increasing the contact area with the stripping solution, which is beneficial to quickly and effectively stripping the photoresist on the piezoelectric substrate during the stripping process. Especially when the size of the photoresist in this area is large, through the implementation manner of the present application, the photoresist stripping effect is remarkable, thereby avoiding product failure caused by insufficient photoresist stripping and improving the yield of manufacturing semiconductor devices.

[0130] The embodiments of the present application also provide a method for manufacturing a semiconductor device. Please refer to Figure 8 、 Figure 5 and Figure 6 , Figure 8 、Figure 5 and Figure 6 are both schematic flowcharts of the method for manufacturing a semiconductor device provided by an embodiment of the present application. As Figure 8 , Figure 5 and Figure 6 shown, an embodiment of the present application can manufacture a semiconductor device through the following steps, and can quickly and effectively remove the photoresist on the piezoelectric substrate.

[0131] S31. Form a photoresist layer with a first thickness on one surface of the piezoelectric substrate, and the photoresist layer includes a semiconductor pattern region and a stripping region.

[0132] S32. Perform partial exposure processing on the photoresist in the stripping region and the semiconductor pattern region respectively using a first exposure amount and a second exposure amount, form at least one first exposed region and at least one first unexposed region in the stripping region, and form a second exposed region and a second unexposed region in the semiconductor pattern region; the first exposure amount is less than the second exposure amount.

[0133] S33. Develop the photoresist of the photoresist layer so that the photoresist in the first exposed region and the first unexposed region has a thickness difference, and the thickness of the photoresist in one of the second exposed region and the second unexposed region is 0 to expose the piezoelectric substrate.

[0134] S34. Deposit a metal thin film layer, and the metal thin film layer is located on the photoresist in the stripping region, on the photoresist in the semiconductor pattern region, and on the piezoelectric substrate in the semiconductor pattern region.

[0135] S35. Use a stripping solution to remove the remaining photoresist on the piezoelectric substrate and the metal thin film layer on the remaining photoresist to form a semiconductor pattern on the piezoelectric substrate.

[0136] In the embodiment of the present application, for the specific steps S31-S35, reference may be made to the relevant descriptions of steps S11-S14 and steps S21-S27 in the foregoing embodiment, and the embodiment of the present application will not elaborate on this.

[0137] In the embodiment of the present application, in the process of manufacturing a semiconductor device, by performing partial exposure processing on the photoresist in the stripping region, the photoresist in this region forms a stepped shape with high and low undulations, thereby increasing the contact area with the stripping solution, which is beneficial to quickly and effectively stripping the photoresist on the piezoelectric substrate in the stripping process. Especially when the size of the photoresist in the stripping region is large, through the implementation manner of the present application, the photoresist stripping effect is remarkable, thereby avoiding product failure caused by insufficient photoresist stripping and improving the yield of manufacturing semiconductor devices.

[0138] The embodiments of the present application also provide a semiconductor device, which may be a surface acoustic wave resonator, a surface acoustic wave filter, a duplexer (or multiplexer), etc., and the embodiments of the present application do not make limitations. It can be understood that the semiconductor device can be manufactured by the method provided in steps S21-S27 in the foregoing embodiments or the method provided in steps S31-S35, and the embodiments of the present application will not elaborate on this.

[0139] In one embodiment, the duplexer (or multiplexer) includes a surface acoustic wave filter, and the surface acoustic wave filter includes a surface acoustic wave resonator.

[0140] The embodiments of the present application also provide a semiconductor device manufacturing system, including a lithography equipment, a coating equipment, and a photoresist removing equipment.

[0141] In a specific embodiment, the lithography equipment, the coating equipment, and the photoresist removing equipment cooperate to implement the photoresist stripping method provided in the foregoing embodiments, so that the photoresist on the wafer can be stripped quickly and effectively.

[0142] In a specific embodiment, the lithography equipment, the coating equipment, and the photoresist removing equipment cooperate to implement the semiconductor manufacturing method provided in the foregoing embodiments. During the process of manufacturing the semiconductor, the photoresist on the wafer can be stripped quickly and effectively, reducing product failure.

[0143] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A photoresist stripping method, characterized in that, The method includes: Forming a photoresist layer with a first thickness on a surface of a wafer, the photoresist layer including a stripping region; Performing partial exposure on the photoresist within the stripping region to form at least one first exposure region and at least one first non-exposure region; Developing the photoresist within the stripping region so that there is a thickness difference between the photoresist in the first exposure region and the photoresist in the first non-exposure region; Removing the photoresist within the stripping region using a stripping solution.

2. The method according to claim 1, characterized in that The photoresist layer further includes a semiconductor pattern region, and the area of the stripping region exceeds 20% of the area of the semiconductor pattern region.

3. The method according to claim 1 or 2, characterized in that, The photoresist layer further includes a semiconductor pattern region, and the area of the stripping region exceeds 30% of the area of the semiconductor pattern region.

4. The method according to claim 1, wherein The performing partial exposure on the photoresist within the stripping region to form at least one first exposure region and at least one first non-exposure region includes: Covering a mask on the stripping region, the mask including a hollow pattern and a non-hollow pattern, and the photoresist within the stripping region is partially exposed within the hollow pattern; Performing exposure on the photoresist within the stripping region, and the photoresist exposed within the hollow pattern forms at least one first exposure region, and the photoresist covered by the non-hollow pattern forms at least one first non-exposure region.

5. The method according to claim 1, wherein After developing the photoresist within the stripping region, the photoresist in the first exposure region has a second thickness, the photoresist in the first non-exposure region has a third thickness, one of the second thickness and the third thickness is equal to the first thickness, and the other of the second thickness and the third thickness is greater than 0 and less than the first thickness.

6. The method according to claim 1, characterized in that The photoresist of the photoresist layer is a positive photoresist, the third thickness is equal to the first thickness, and the second thickness is greater than 0 and less than the first thickness; or, The photoresist of the photoresist layer is a negative photoresist, the second thickness is equal to the first thickness, and the third thickness is greater than 0 and less than the first thickness.

7. The method according to claim 5 or 6, characterized in that, Defining the smaller of the second thickness and the third thickness as h, and the larger of the second thickness and the third thickness as H, and h is 10%-50% of H.

8. The method according to claim 7, characterized in that h is 20%-40% of H.

9. The method according to claim 1, wherein In at least one direction in the plane where the photoresist layer is located, the first exposure regions and the first non-exposure regions are alternately arranged.

10. The method according to claim 1 or 9, characterized in that, The photoresist of the photoresist layer is a positive photoresist, and the edge of the stripping region is the first non-exposure region; or, the photoresist of the photoresist layer is a negative photoresist, and the edge of the stripping region is the first exposure region.

11. The method according to claim 9, wherein The widths of the first exposure region and the first non-exposure region are respectively 2-5 times the resolution of the photoresist of the photoresist layer; and / or, The width of the first exposure region is equal to the width of the first non-exposure region.

12. The method according to claim 1, wherein The wafer is a piezoelectric substrate, and the photoresist layer further includes a semiconductor pattern region; before developing the photoresist within the stripping region, the method further includes: Partially expose the photoresist within the semiconductor pattern region to form a second exposed region and a second unexposed region; Develop the photoresist within the semiconductor pattern region, such that the thickness of the photoresist in one of the second exposed region and the second unexposed region is 0 to expose the piezoelectric substrate, and the thickness of the photoresist in the other of the second exposed region and the second unexposed region is equal to the first thickness.

13. The method according to claim 12, characterized in that, Expose the photoresist within the stripping region with a first exposure dose, and partially expose the photoresist within the semiconductor pattern region with a second exposure dose, wherein the first exposure dose is less than the second exposure dose.

14. The method according to claim 13, wherein The first exposure dose is 50% - 90% of the second exposure dose.

15. The method according to claim 13 or 14, characterized in that, The first exposure dose is 60% - 80% of the second exposure dose.

16. The method according to claim 12, wherein Before removing the photoresist within the stripping region using the stripping solution, the method further includes: Depositing a metal thin film layer, which is located on the photoresist within the stripping region, on the photoresist within the semiconductor pattern region, and on the piezoelectric substrate within the semiconductor pattern region.

17. The method according to claim 16, wherein The thickness of the metal thin film layer is 20% - 30% of the first thickness.

18. The method according to claim 16, wherein The method further includes: using the stripping solution to remove the remaining photoresist on the piezoelectric substrate and the metal thin film layer on the remaining photoresist to form a semiconductor pattern on the piezoelectric substrate.

19. The method according to claim 1, characterized in that, There is a sidewall between the photoresist in the first exposed region and the photoresist in the first unexposed region after the development process, and the angle between the sidewall and the plane of the surface of the wafer is greater than or less than 90°.

20. A method for manufacturing a semiconductor device, characterized in that, The method includes: Form a photoresist layer with a first thickness on one surface of the piezoelectric substrate, and the photoresist layer includes a semiconductor pattern region and a stripping region; Partially expose the photoresist within the stripping region and the semiconductor pattern region with a first exposure dose and a second exposure dose respectively, to form at least one first exposed region and at least one first unexposed region within the stripping region, and form a second exposed region and a second unexposed region within the semiconductor pattern region; the first exposure dose is less than the second exposure dose; Develop the photoresist of the photoresist layer to make the photoresist in the first exposed region and the first unexposed region have a thickness difference, and the thickness of the photoresist in one of the second exposed region and the second unexposed region is 0 to expose the piezoelectric substrate; Depositing a metal thin film layer, which is located on the photoresist within the stripping region, on the photoresist within the semiconductor pattern region, and on the piezoelectric substrate within the semiconductor pattern region; Using the stripping solution to remove the remaining photoresist on the piezoelectric substrate and the metal thin film layer on the remaining photoresist to form a semiconductor pattern on the piezoelectric substrate.

21. A semiconductor device manufacturing system, characterized in that, Including a lithography machine device, a coating device, and a photoresist removal device, the lithography machine device, the coating device, and the photoresist removal device cooperate to perform the photoresist stripping method according to any one of claims 1-19, and / or, the lithography machine device, the coating device, and the photoresist removal device cooperate to perform the semiconductor device manufacturing method according to claim 20.

22. A semiconductor device, characterized in that, The semiconductor device is prepared by the semiconductor device manufacturing method according to claim 20.

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