Workpiece surface cleaner and physical vapor deposition equipment thereof

Abstract

The invention relates to the technical field of magnetic control coating, in particular to a workpiece surface cleaning device and physical vapor deposition equipment thereof. The middle isolation ring is located on the contact surface of the cleaner shell and the deposition equipment shell; the rotating plate is rotationally connected to an inner cavity of the middle isolation ring; the motor is fixedly connected to the left side of the middle isolation ring; the air supply pipe communicates with the top and the bottom of the rotating plate; the substrate mounting plates are fixedly connected to the opposite ends of the two air supply pipes; and the through air supply holes are formed in the outer walls of the air supply pipes. According to the invention, ion guiding can be carried out on the edge area of the target material in an electromagnetic field formed by the third electromagnetic block and the second electromagnetic block, so that the edge and the inner ring of the target material are subjected to propelling sputtering utilization; and in the electromagnetic field formed by the first electromagnetic block and the third electromagnetic block, sputtering utilization can be carried out on the central area of the target material, namely the area which is difficult to utilize by the electromagnetic field formed by the third electromagnetic block and the second electromagnetic block.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron coating, and particularly to a workpiece surface cleaner and its physical vapor deposition equipment. Background Art

[0002] Physical vapor deposition is a technology that converts solid materials into gas through physical processes and then deposits them on the surface of a substrate to form a thin film. It utilizes phenomena such as the thermal evaporation of substances or the sputtering of surface atoms of substances when bombarded by particles to achieve the controllable transfer of substance atoms from the source material to the thin film. The principles of physical vapor deposition include evaporation, sputtering, and transportation. Because the deposited thin films prepared by it have excellent hardness, wear resistance, corrosion resistance, and optical properties, it is widely used in the fields of electronics, optics, decorative coatings, and various industrial tools.

[0003] Physical vapor deposition can be further divided into vacuum evaporation, magnetron sputtering, arc evaporation, and electron beam assisted deposition according to different gasification methods. Among them, magnetron sputtering uses an electric field to control high-energy ions to bombard the target material, causing the target material atoms to sputter out and deposit on the substrate. Because the coating process is easy to control, the deposition rate is high, and the heating of the substrate is less, the substrate can maintain a relatively low temperature, thereby improving the adhesion and mechanical strength of the thin film. Because of these advantages, the application of magnetron sputtering shows a rapid growth trend.

[0004] However, although magnetron sputtering has many above-mentioned advantages, due to the fact that the magnetic field lines of the target source magnetic field always distribute in a circular shape during its use, a circular area is formed on the surface of the target material. Therefore, the target material is eroded to form a deep groove. In this case, the utilization rate of the target material is relatively low (that is, electrons will be attracted by the magnetic field and collide with more atoms, and the atoms will become ions, and these ions will bombard the target material under the action of the electric field, causing it to be eroded). Especially for some precious metal target materials, high-purity metal target materials, and alloy target materials, this low utilization rate of the target material causes economic losses.

[0005] Therefore, a workpiece surface cleaner and its physical vapor deposition equipment are proposed. Summary of the Invention

[0006] The purpose of the present invention is to provide a workpiece surface cleaner and its physical vapor deposition equipment, which solves the problem that in the existing magnetron sputtering technology, due to the fact that the magnetic field lines of the target source magnetic field always distribute in a circular shape, a circular area is formed on the surface of the target material, and therefore the target material is eroded to form a deep groove, resulting in a relatively low utilization rate of the target material. Through two consecutive sets of magnetic fields, the common utilization of the circumferential area and the central area of the target material can be realized, thereby increasing the utilization rate of the target material.

[0007] To achieve the above purpose, the present invention provides the following technical solutions:

[0008] A workpiece surface cleaner includes a cleaner housing and a deposition equipment housing, and further includes a middle isolation ring located at the contact surface between the cleaner housing and the deposition equipment housing, a rotating plate rotatably connected to the inner cavity of the middle isolation ring, a motor fixedly connected to the left side of the middle isolation ring, air supply pipes communicating with the top and bottom of the rotating plate, substrate mounting plates fixedly connected to the opposite ends of the two air supply pipes, and through air supply holes opened on the outer walls of the air supply pipes;

[0009] When the motor controls the rotating plate to flip 180°, the top and bottom air supply pipes, the substrate mounting plates, and the substrates mounted on the substrate mounting plates are turned over and repositioned.

[0010] In the above solution, generally, a special transfer mechanism is set between the existing cleaner and the physical vapor deposition equipment to transfer the cleaned workpiece, thereby reducing the exposure time of the workpiece and avoiding secondary contamination of the workpiece. However, in this way, on the one hand, it will increase the floor area of the entire vapor deposition production equipment, and on the other hand, if there is a breakage in the transfer pipeline during transfer, it will still cause secondary contamination. In response to the above problems, in this solution, the cleaner is installed on the top of the physical vapor deposition equipment, and the cleaned workpiece only needs to be flipped 180° to enter the physical vapor deposition equipment. Therefore, not only is the entire equipment more compact, but also the problem of breakage in the transfer pipeline is avoided, thereby avoiding secondary contamination of the workpiece and affecting the subsequent deposition effect.

[0011] Preferably, a top cover is provided on the top of the cleaner housing, an air inlet pipe is connected to the right side of the rotating plate, the air inlet pipe and the motor are coaxial, and the air inlet pipe is communicated with the two air supply pipes. A three-way valve is provided at the position where the air inlet pipe and the two air supply pipes are communicated. Through holes are opened on the rear sides of the cleaner housing and the deposition equipment housing.

[0012] In the above solution, the air inlet pipe is used to communicate with the two air supply pipes to respectively supply inert gas to the cleaner and the physical vapor deposition equipment. The three-way valve is used to control the air supply direction and start and stop. The air inlet pipe is set symmetrically, which not only realizes the supply of inert gas to the two devices, but also can clean the air supply holes in the cleaner, thereby avoiding impurities from depositing at the air supply holes, resulting in impure gas during physical vapor deposition and affecting the final physical vapor deposition effect.

[0013] A physical vapor deposition device for a workpiece surface, including the above-mentioned cleaner, including a magnetron sputtering component. The magnetron sputtering component includes a third electromagnetic block, a top limiting ring and a lifting ring respectively sleeved on the top and bottom of the outer wall of the third electromagnetic block, a second cylinder fixed to the bottom of the lifting ring, connecting rods evenly distributed on the outer circle of the lifting ring, a sleeve rotatably connected to the outer end of the connecting rod, a second electromagnetic block inserted into the inner cavity of the sleeve, a first cylinder fixedly connected to the top of the top limiting ring, a first electromagnetic block fixedly connected to the top of the first cylinder, and a target located on the top of the third electromagnetic block;

[0014] When the second cylinder controls the lifting ring to rise, the connecting rod drives the sleeve and the second electromagnetic block to contract from the edge of the target to the center. The third electromagnetic block and the second electromagnetic block are energized to form an electromagnetic field around the edge of the target; when the second cylinder controls the lifting ring to rise until it contacts the top limiting ring, the second electromagnetic block is powered off, and at the same time, the first cylinder controls the first electromagnetic block to rise. The first electromagnetic block and the third electromagnetic block are energized to form an electromagnetic field around the central area of the target.

[0015] In the above solution, the reason why the magnetic field lines of the target source magnetic field are always circularly distributed during magnetron sputtering is that a circular area is formed on the surface of the target. Therefore, the target is eroded to form a deep groove. In this case, the utilization rate of the target is low. For the above reasons, this solution divides the magnetron sputtering into two sets of electromagnetic fields, that is, a set of horizontal ones is used for magnetron sputtering the periphery of the target, and a set of vertical ones is used for magnetron sputtering the middle part of the target. Thus, the target can be utilized to the greatest extent and the waste of the target can be avoided.

[0016] Preferably, a bottom plate is provided at the bottom of the sleeve. A limiting sliding groove corresponding to the position of the sleeve is opened at the top of the bottom plate. A limiting sliding block is slidably connected in the inner cavity of the limiting sliding groove, and the limiting sliding block is connected to the bottom of the sleeve.

[0017] In the above solution, the setting of the limiting sliding block and the limiting sliding groove can be used to limit the movement of the sleeve and the second electromagnetic block installed in the sleeve, so that the distance between each individual of the second electromagnetic block remains the same during movement, avoiding deviation in the distance between individuals during movement, thereby affecting the entire electromagnetic field and ultimately affecting the final deposition effect.

[0018] Preferably, an installation ring is provided at the top of the bottom plate. An arc-shaped ring groove corresponding to the position of the sleeve is opened at the top of the installation ring, and a cooling cavity is opened in the inner cavity of the installation ring.

[0019] In the above solution, on the one hand, this arc-shaped ring groove can be in direct contact with the sleeve and the second electromagnetic block, so that the coolant in the internal cooling cavity can quickly cool the second electromagnetic block, thus avoiding the weakening of the electromagnetic field caused by the overheating of the second electromagnetic block. On the other hand, the movement of the second electromagnetic block can be secondarily limited through the arc-shaped ring groove, thereby ensuring its equidistance during movement.

[0020] Preferably, the sleeve, the lifting ring and the top limiting ring are made of the same material as the second electromagnetic block and the third electromagnetic block, and the first electromagnetic block is made of the same material as the target.

[0021] In the above solution, the sleeve, the lifting ring and the top limiting ring are made of the same material as the second electromagnetic block and the third electromagnetic block, which can avoid the influence of the added sleeve, lifting ring and top limiting ring on the magnetic force of the second electromagnetic block and the third electromagnetic block, and thus affect the electromagnetic field between the second electromagnetic block and the third electromagnetic block. The first electromagnetic block is made of the same material as the target, so that the first electromagnetic block will not affect the sputtering use of the target when magnetron sputtering is carried out around the target.

[0022] Preferably, a magnetic steel sheet is arranged on the top of the mounting ring, the target is located on the top of the magnetic steel sheet, the first electromagnetic block is located on the top of the target, the first cylinder penetrates through the target and is connected to the first electromagnetic block, and an insulating sleeve ring is sleeved on the outer wall of the first cylinder.

[0023] In the above solution, adding magnetic steel sheets on the tops of the first electromagnetic block and the second electromagnetic block can effectively improve the electromagnetic field between the first electromagnetic block and the second electromagnetic block, and play a role in increasing the efficiency of magnetron sputtering.

[0024] Preferably, top insulating sleeves and bottom insulating sleeves which are symmetric up and down are sleeved on the outer wall of the mounting ring, an isolation cover is sleeved on the outer walls of the top insulating sleeves and the bottom insulating sleeves, and an arc surface is arranged on the inner top of the isolation cover, and the extension center point of the arc surface coincides with the third electromagnetic block.

[0025] In the above solution, setting the inner top surface of the isolation cover as an arc surface and the center point of the arc surface coinciding with the third electromagnetic block can play a certain guiding role for ions, enabling them to quickly carry out corresponding bombardment work in the electromagnetic field, thereby improving the working efficiency of magnetron sputtering.

[0026] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0027] 1. By setting two electromagnetic fields, the present invention not only uses the circumferential area of the target, but also can use the central area of the target, thereby reducing the waste of the target. In the electromagnetic field formed by the third electromagnetic block and the second electromagnetic block, ion guiding can be carried out on the edge area of the target to sputter and utilize the edge and inner ring of the target by pushing. In the electromagnetic field formed by the first electromagnetic block and the third electromagnetic block, sputtering utilization can be carried out on the central area of the target, that is, the area that is difficult to be utilized by the electromagnetic field formed by the third electromagnetic block and the second electromagnetic block, thus reducing the waste of target use.

[0028] 2. By mounting the cleaner on the top of the physical vapor deposition equipment, the workpiece only needs to be flipped by 180° after cleaning to enter the physical vapor deposition equipment. Therefore, not only is the entire equipment more compact, but also the problem of damage to the transmission pipeline is avoided, thereby preventing the workpiece from being secondarily contaminated and affecting the subsequent deposition effect.

[0029] 3. When cleaning the workpiece, the present invention can also synchronously clean the air supply holes at the air supply pipe flipped to the cleaner, thereby avoiding the accumulation of impurities at the air supply holes during long-term use, resulting in impure inert gas fed by physical vapor deposition and affecting the deposition surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0031] Figure 1 It is a schematic diagram of the positional structure of the cleaner housing and the deposition equipment housing of the present invention;

[0032] Figure 2 It is a schematic cross-sectional structure diagram of the magnetron sputtering component of the present invention;

[0033] Figure 3 It is a schematic diagram of the structure of the mounting ring of the present invention;

[0034] Figure 4 It is a schematic diagram of the connecting rod and the sleeve structure of the present invention;

[0035] Figure 5 It is a schematic diagram of the structure of the bottom plate of the present invention;

[0036] Figure 6 It is a schematic diagram of the structure of the rotating plate of the present invention;

[0037] Figure 7 It is a schematic diagram of the overall structure of the present invention;

[0038] Figure 8 It is a schematic diagram of the structure of the isolation cover of the present invention.

[0039] In the figure: 100, cleaner housing; 101, motor; 102, intake pipe; 103, middle isolation ring; 104, top cover; 105, rotating plate; 106, air supply pipe; 107, substrate mounting plate; 108, air extraction hole; 109, air supply hole; 110, three-way valve; 200, deposition equipment housing; 2, magnetron sputtering assembly; 201, isolation cover; 202, target; 203, first electromagnetic block; 204, magnetic steel sheet; 205, first cylinder; 206, top insulating sleeve; 207, bottom insulating sleeve; 208, mounting ring; 209, cooling cavity; 210, bottom plate; 211, second electromagnetic block; 212, sleeve; 213, limit slider; 214, limit chute; 215, third electromagnetic block; 216, lifting ring; 217, connecting rod; 218, top limit ring; 219, second cylinder; 220, arc-shaped ring groove. Detailed implementation mode

[0040] The following is a more clear and complete description of the technical solutions in the embodiments of the present invention in combination with the drawings in the embodiments of the present invention, and the described embodiments are only a part of all the embodiments of the present invention. Based on the embodiments of the present invention, all embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0041] Please refer to Figures 1 to 8 , the present invention provides a workpiece surface cleaner and its physical vapor deposition equipment, and the technical solutions are as follows:

[0042] Referring to Figure 1 , 6 , 7, a workpiece surface cleaner, including a cleaner housing 100 and a deposition equipment housing 200, further including a middle isolation ring 103 fixed on the contact surface of the cleaner housing 100 and the deposition equipment housing 200, a rotating plate 105 rotatably connected to the inner cavity of the middle isolation ring 103, a motor 101 fixedly connected to the left side of the middle isolation ring 103, an air supply pipe 106 communicating with the top and bottom of the rotating plate 105, a substrate mounting plate 107 fixedly connected to the opposite ends of the two air supply pipes 106, and a through air supply hole 109 opened on the outer wall of the air supply pipe 106;

[0043] When the motor 101 controls the turntable 105 to flip 180°, the top and bottom air supply pipes 106, the substrate mounting plate 107, and the substrate mounted on the substrate mounting plate 107 are flipped and repositioned. The motor 101 drives the turntable 105 to flip 180°. At this time, the workpiece that has been cleaned in the inner cavity of the cleaner housing 100 enters the inner cavity of the deposition equipment housing 200 as it rotates, while the workpiece that has been deposited returns to the inner cavity of the cleaner housing 100. During this process, the conversion of the workpiece is rapid, avoiding secondary pollution caused by contact with other pollution sources. Moreover, the workpiece that returns to the inner part of the cleaner housing 100 can be annealed or a new workpiece can be replaced to continue the cleaning process, achieving continuous production.

[0044] As an embodiment of the present invention, referring to Figure 1 , a top cover 104 is provided at the top of the cleaner housing 100. The right side of the turntable 105 is connected to an air inlet pipe 102. The air inlet pipe 102 and the motor 101 are coaxial, thus avoiding interference of the air inlet pipe 102 with the rotation of the motor 101, which in turn affects the conversion of the workpiece. Moreover, the air inlet pipe 102 is connected to two air supply pipes 106. A three-way valve 110 is provided at the connection intersection position of the air inlet pipe 102 and the two air supply pipes 106. Through holes 108 are provided at the rear sides of both the cleaner housing 100 and the deposition equipment housing 200. The three-way valve 110 can control the opening and closing of the gas input from the air inlet pipe 102 to the two air supply pipes 106. Thus, it is convenient to control the content of inert gas in the cleaner and the physical vapor deposition equipment. Moreover, when in use, after passing through the air supply hole 109 of the physical vapor deposition equipment and entering the cleaner, it will be cleaned together with the workpiece, thereby avoiding the deposition of impurities at the end of the air supply hole 109, resulting in impurities in the subsequent input gas and affecting the final deposition effect.

[0045] Referring to Figure 2 、 3, 4. A physical vapor deposition device for a workpiece surface. The device includes the above-mentioned cleaner and a magnetron sputtering assembly 2. The magnetron sputtering assembly 2 includes a third electromagnetic block 215, a top limiting ring 218 and a lifting ring 216 sleeved on the top and bottom outer walls of the third electromagnetic block 215 respectively, a second cylinder 219 fixed to the bottom of the lifting ring 216, connecting rods 217 evenly distributed on the outer circle of the lifting ring 216, sleeves 212 rotatably connected to the outer ends of the connecting rods 217, second electromagnetic blocks 211 inserted into the inner cavities of the sleeves 212, a first cylinder 205 fixedly connected to the top of the top limiting ring 218, a first electromagnetic block 203 fixedly connected to the top of the first cylinder 205, and a target 202 located on the top of the third electromagnetic block 215. By pushing the lifting ring 216 to move upward with the second cylinder 219, during the upward movement, the connecting rods 217 are driven to move simultaneously. Since the ends of the connecting rods 217 are connected with the sleeves 212, the sleeves 212 will move along with the upward movement of the lifting ring 216, so that the second electromagnetic blocks 211 installed in the inner cavities of the sleeves 212 also move in a contracting manner. In this way, the distance between the electromagnetic fields of the third electromagnetic block 215 and the second electromagnetic block 211 can be changed, so that different regions of the target can be sputtered and utilized. When the lifting ring 216 moves upward to contact the top limiting ring 218, at this time, the second electromagnetic block 211 stops being powered on, and the first cylinder 205 pushes the first electromagnetic block 203 to rise. After rising to a set distance, the first electromagnetic block 203 is powered on to form an electromagnetic field between it and the third electromagnetic block 215.

[0046] When the second cylinder 219 controls the lifting ring 216 to rise, the connecting rods 217 drive the sleeves 212 and the second electromagnetic blocks 211 to contract from the edge of the target 202 towards the center. The third electromagnetic block 215 and the second electromagnetic block 211 are powered on to form an electromagnetic field surrounding the edge of the target 202. When the second cylinder 219 controls the lifting ring 216 to rise until it contacts the top limiting ring 218, the second electromagnetic block 211 is powered off. At the same time, the first cylinder 205 controls the first electromagnetic block 203 to rise. The first electromagnetic block 203 and the third electromagnetic block 215 are powered on to form an electromagnetic field surrounding the central area of the target 202. By setting two electromagnetic fields, in the electromagnetic field formed by the third electromagnetic block 215 and the second electromagnetic block 211, ion guiding can be carried out on the edge area of the target 202, so as to carry out sputtering utilization on the edge and inner ring of the target 202. And in the electromagnetic field formed by the first electromagnetic block 203 and the third electromagnetic block 215, sputtering utilization can be carried out on the central area of the target 202, that is, the area that is difficult to be utilized by the electromagnetic field formed by the third electromagnetic block 215 and the second electromagnetic block 211 (because of the surrounding characteristics of the electromagnetic field and the electromagnetic interference phenomenon that is likely to occur when the two electromagnetic blocks are too close to each other), thus reducing the waste of the target 202.

[0047] As an implementation mode of the present invention, refer to Figure 5, at the bottom of the sleeve 212 is abutted against a bottom plate 210. At the top of the bottom plate 210, a limiting sliding groove 214 corresponding to the position of the sleeve 212 is provided. Inside the limiting sliding groove 214, a limiting sliding block 213 is slidably connected. The limiting sliding block 213 is fixedly connected to the bottom of the sleeve 212, thereby limiting the movement of the sleeve 212, so as to avoid the difference in the distance between individuals when the second electromagnetic block 211 moves, resulting in a difference in the electromagnetic field, and thus causing the problem of uneven utilization of the target 202.

[0048] As an embodiment of the present invention, referring to Figure 3 , at the top of the bottom plate 210, an installation ring 208 is fixedly connected. At the top of the installation ring 208, an arc-shaped ring groove 220 corresponding to the position of the sleeve 212 is provided, and a cooling cavity 209 is provided inside the installation ring 208. The sleeve 212 and the second electromagnetic block 211 are limited and wrapped through the arc-shaped ring groove 220, so that the cooling cavity 209 inside can uniformly cool each second electromagnetic block 211. Compared with the existing water channel type cooling, the cooling efficiency is higher, the cooling effect is better, and the arc-shaped ring groove 220 can also perform secondary limitation on the movement of the sleeve 212 and the second electromagnetic block 211.

[0049] As an embodiment of the present invention, referring to Figure 2 , the materials of the sleeve 212, the lifting ring 216 and the top limiting ring 218 are the same as those of the second electromagnetic block 211 and the third electromagnetic block 215. This setting can avoid the interference of the electromagnetic field, thus affecting its strength, and finally affecting the magnetron sputtering of the target 202. The material of the first electromagnetic block 203 is the same as that of the target 202. When the first electromagnetic block 203 is not energized, it and the target 202 can be regarded as a whole, so it will not interfere with the electromagnetic field generated by the third electromagnetic block 215 and the second electromagnetic block 211, and after it is energized, it can form another magnetic field with the third electromagnetic block 215.

[0050] As an embodiment of the present invention, referring to Figure 2 , a magnetic steel sheet 204 is provided at the top of the installation ring 208. The target 202 is located on the top of the magnetic steel sheet 204, the first electromagnetic block 203 is located on the top of the target 202, the first cylinder 205 passes through the target 202 and is connected to the first electromagnetic block 203, and an insulating sleeve ring is sleeved on the outer wall of the first cylinder 205. The magnetic steel sheet 204 is used to enhance the electromagnetic field, thereby achieving a better magnetron sputtering effect.

[0051] As an embodiment of the present invention, referring to Figure 3 , 8, on the outer wall of the installation ring 208, there are symmetrically arranged top insulation sleeves 206 and bottom insulation sleeves 207 up and down. On the outer walls of the top insulation sleeve 206 and the bottom insulation sleeve 207, there is an isolation cover 201. An arc surface is provided at the top inside the isolation cover 201. The extension center point of this arc surface coincides with the third electromagnetic block 215. The arc surface can guide the charged ions to quickly enter the electromagnetic field and bombard the target 202, thereby increasing the sputtering rate of this magnetron sputtering.

[0052] Working principle: When this solution was being retrieved, it was found that since the magnetic field lines of the target source magnetic field are distributed in a circular shape, it will form an annular area on the surface area of the target 202, and etch the target 202 in this annular area, making the target 202 etched into a deep groove. This non-uniform consumption of the target 202 will result in a low utilization rate of the target 202. For some targets 202 made of precious metals, high-purity metals, and alloys as raw materials, it will cause certain economic losses. Therefore, for this problem, this solution designs two sets of magnetic fields. The first set of magnetic fields is used for magnetron sputtering of the circumferential area of the target 202, and the second set of magnetic fields is used for magnetron sputtering of the central area of the target 202. The specific method is as follows:

[0053] Magnetic field conversion: The second cylinder 219 is used to push the lifting ring 216 to move upward. During its upward movement, the connecting rod 217 is driven to move at the same time. Since the end of the connecting rod 217 is connected to the sleeve 212, the sleeve 212 will move as the lifting ring 216 moves upward, so that the second electromagnetic block 211 installed in the inner cavity of the sleeve 212 will also move in a contracting manner, thereby changing the distance between the electromagnetic fields of the third electromagnetic block 215 and the second electromagnetic block 211, and sputtering and utilizing the circumferential area of the target 202 in a propelling manner. When the lifting ring 216 moves upward to contact the top limit ring 218, the second electromagnetic block 211 stops being energized at this time, and the first cylinder 205 pushes the first electromagnetic block 203 to rise, and after rising to a set distance, the first electromagnetic block 203 is energized to form an electromagnetic field between it and the third electromagnetic block 215, so as to sputter and utilize the central area of the target, that is, the area that is difficult to be utilized by the electromagnetic fields formed by the third electromagnetic block 215 and the second electromagnetic block 211;

[0054] Workpiece conversion: After the physical deposition of the target 202 is completed, the control turntable 105 is driven by the motor 101 to flip 180°. At this time, the workpiece that has been cleaned in the inner cavity of the cleaner housing 100 enters the inner cavity of the deposition equipment housing 200 with the rotation, while the workpiece that has been deposited returns to the inner cavity of the cleaner housing 100. During this process, the conversion of the workpiece is rapid, avoiding secondary pollution caused by contact with other pollution sources. Moreover, the workpiece that returns to the inner cavity of the cleaner housing 100 can be annealed or a new workpiece can be replaced to continue the cleaning process, realizing continuous production. At the same time, the air supply pipe 106 in the physical vapor deposition equipment also enters the cleaner along with the workpiece and will be cleaned together with the workpiece, thereby avoiding the deposition of impurities at the end of the air supply hole 109, resulting in impurities in the subsequent input gas and affecting the final deposition effect.

[0055] The main advantages and working principles of the embodiments of the present invention have been described above. However, as a person skilled in the art, it should be understood that the above embodiments do not serve as limitations to the present invention. Without departing from the principles, spirit, and scope of the invention, various changes, modifications, substitutions, and variations can be made, and all these changes, modifications, substitutions, and variations should fall within the protection scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A workpiece surface cleaner, comprising a cleaner housing (100) and a deposition device housing (200), characterized in that: It also includes a middle isolation ring (103) located at the contact surface between the washer housing (100) and the deposition equipment housing (200), a rotating plate (105) rotatably connected to the inner cavity of the middle isolation ring (103), a motor (101) fixedly connected to the left side of the middle isolation ring (103), an air supply pipe (106) communicating with the top and bottom of the rotating plate (105), a substrate mounting plate (107) fixedly connected to the opposite ends of the two air supply pipes (106), and a through air supply hole (109) opened on the outer wall of the air supply pipe (106). When the motor (101) controls the rotating plate (105) to flip 180°, the top and bottom air supply pipes (106), the substrate mounting plate (107), and the substrate mounted on the substrate mounting plate (107) are flipped and repositioned.

2. The surface cleaner for a workpiece according to claim 1, wherein: A top cover (104) is provided at the top of the washer housing (100). An air inlet pipe (102) is connected to the right side of the rotating plate (105). The air inlet pipe (102) and the motor (101) are coaxial, and the air inlet pipe (102) communicates with the two air supply pipes (106). A three-way valve (110) is provided at the connection intersection of the air inlet pipe (102) and the two air supply pipes (106). Through air extraction holes (108) are opened at the rear sides of the washer housing (100) and the deposition equipment housing (200).

3. A physical vapor deposition device for a workpiece surface, comprising the washer described in any one of the above claims 1-2, characterized in that: It includes a magnetron sputtering assembly (2). The magnetron sputtering assembly (2) includes a third electromagnetic block (215), a top limiting ring (218) and a lifting ring (216) respectively sleeved on the top and bottom outer walls of the third electromagnetic block (215), a second cylinder (219) fixed to the bottom of the lifting ring (216), connecting rods (217) evenly distributed on the outer ring of the lifting ring (216), a sleeve (212) rotatably connected to the outer ends of the connecting rods (217), a second electromagnetic block (211) inserted into the inner cavity of the sleeve (212), a first cylinder (205) fixedly connected to the top of the top limiting ring (218), a first electromagnetic block (203) fixedly connected to the top of the first cylinder (205), and a target (202) located on the top of the third electromagnetic block (215). When the second cylinder (219) controls the lifting ring (216) to rise, the connecting rods (217) drive the sleeve (212) and the second electromagnetic block (211) to contract from the edge of the target (202) towards the center. The third electromagnetic block (215) and the second electromagnetic block (211) are energized to form an electromagnetic field surrounding the edge of the target (202). When the second cylinder (219) controls the lifting ring (216) to rise until it contacts the top limiting ring (218), the second electromagnetic block (211) is de-energized, and at the same time, the first cylinder (205) controls the first electromagnetic block (203) to rise. The first electromagnetic block (203) and the third electromagnetic block (215) are energized to form an electromagnetic field surrounding the central area of the target (202).

4. The physical vapor deposition device for a workpiece surface according to claim 3, characterized in that: A bottom plate (210) is provided at the bottom of the sleeve (212). A limiting sliding groove (214) corresponding to the position of the sleeve (212) is formed at the top of the bottom plate (210). A limiting sliding block (213) is slidably connected in the inner cavity of the limiting sliding groove (214), and the limiting sliding block (213) is connected to the bottom of the sleeve (212).

5. The physical vapor deposition apparatus for a workpiece surface according to claim 4, wherein: An installation ring (208) is provided at the top of the bottom plate (210). An arc-shaped ring groove (220) is formed at the top of the installation ring (208) corresponding to the position of the sleeve (212), and a cooling cavity (209) is formed in the inner cavity of the installation ring (208).

6. The physical vapor deposition device for a workpiece surface according to claim 3, characterized in that: The sleeve (212), the lifting ring (216) and the top limiting ring (218) are made of the same material as the second electromagnetic block (211) and the third electromagnetic block (215), and the first electromagnetic block (203) is made of the same material as the target (202).

7. The physical vapor deposition device for the surface of a workpiece according to claim 5, wherein: A magnetic steel sheet (204) is provided at the top of the installation ring (208). The target (202) is located at the top of the magnetic steel sheet (204), and the first electromagnetic block (203) is located at the top of the target (202). The first cylinder (205) penetrates through the target (202) and is connected to the first electromagnetic block (203), and an insulating sleeve ring is sleeved on the outer wall of the first cylinder (205).

8. A physical vapor deposition device for a workpiece surface according to claim 7, characterized in that: Top insulating sleeves (206) and bottom insulating sleeves (207) which are symmetric up and down are sleeved on the outer wall of the installation ring (208). An isolation cover (201) is sleeved on the outer walls of the top insulating sleeves (206) and the bottom insulating sleeves (207). An arc-shaped surface is formed at the inner top of the isolation cover (201), and the extension center point of the arc-shaped surface coincides with the third electromagnetic block (215).

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