Monocrystalline silicon furnace top element power supply structure
By integrating the power generation assembly on the top rotating shaft of the single crystal silicon furnace, and cutting the magnetic inductive wire with rotating kinetic energy to generate current, the problem of cable wear and fracture in traditional power supply solutions is solved, and the self-power supply and stable operation of the equipment is achieved.
Patent Information
- Application Number
- CN202510383800.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2025-07-11
AI Technical Summary
In traditional power supply solutions, the rotating mechanism on the top of the single crystal silicon furnace is twisted, worn, and broken due to the conflict between the external cable and the rotating mechanism, which affects the continuous operation ability of the equipment, and occupies space and affects the dynamic balance accuracy of the rotating mechanism.
A power generation component integrated on the top of the rotating shaft is designed to cut the magnetic inductive wires using rotating kinetic energy to generate current. Through the coordination of the magnetic component and the electric coil, self-power is achieved, avoiding the modular structure of external cables, including magnetic components, electric coils, rectifiers and battery packs, ensuring stable supply of electricity.
The cable tangling and breaking problem is completely solved, the shaft kinetic energy is recovered, space is saved, and the equipment's continuous operation ability and dynamic balance accuracy of the rotating mechanism are improved.
Smart Images
Figure CN120301104A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of self-powered technology, and particularly to a power supply structure for the top components of a single crystal furnace. Background Art
[0002] Single crystal silicon is a high-purity silicon material with a complete crystal structure, no grain boundaries and impurities, and is one of the most widely used semiconductor materials. In the process of producing single crystal silicon, the Czochralski method (CZ method) is widely used. In this method, a single crystal is gradually formed by pulling a seed crystal above a crucible containing molten silicon. An electrode ring is usually installed at the top of the CZ method equipment to provide current and ensure signal transmission.
[0003] However, in the Czochralski method (CZ method) single crystal silicon production process, the rotary lifting mechanism at the top of the furnace body needs to rotate continuously at a constant speed. By precisely controlling the lifting speed and rotation angle of the crystal, the structural uniformity and low defect rate of the single crystal silicon rod are ensured. Under this dynamic rotation condition, the key functional components integrated on the furnace top (such as temperature sensors, weighing modules, etc.) need to rely on a stable power supply to maintain process parameter monitoring and thermal field control. However, the traditional power supply scheme uses an external cable to connect to a fixed power supply through a slip ring or a rotary joint, which leads to a movement conflict between the physical cable and the rotating mechanism. Specifically, the external cable generates periodic twisting as the furnace top rotates continuously. Especially when the single crystal silicon growth cycle is up to dozens to hundreds of hours, the cable is accelerated in fatigue due to long-term exposure to alternating mechanical stress, and faults such as insulation layer wear and conductor breakage occur frequently. The cable needs to be replaced by shutting down the machine every 2000 hours on average, which seriously restricts the continuous operation ability of the equipment. At the same time, in order to avoid excessive cable winding, it is necessary to design an additional redundant length and configure a complex guiding device, which not only occupies the already compact mechanical design space on the furnace top, but also introduces an inertial load deviation due to the cable swing, affecting the dynamic balance accuracy of the rotating mechanism. Summary of the Invention
[0004] The main purpose of the present invention is to provide a power supply structure for the top components of a single crystal furnace, which can effectively solve the problems mentioned in the background art.
[0005] To achieve the above purpose, the technical solution adopted by the present invention is as follows: Power supply structure for the top components of a single-crystal silicon furnace, including a melting furnace. An extension cylinder is provided at the top of the melting furnace. A precision motor is installed at the top of the extension cylinder. The output end of the precision motor is connected to a rotating shaft. The lower end of the rotating shaft extends into the extension cylinder, and a power generation assembly is installed outside the upper end. The power generation assembly includes a stabilizing disk. The stabilizing disk is fixedly sleeved on the outer wall of the rotating shaft. An electric coil is fixedly installed at the outer edge position of the stabilizing disk. The electric coil is spliced by multiple groups of coils into an annular cover shape. The power generation assembly further includes an installation outer cover. A circle of magnetic components is fixedly installed on the inner wall of the installation outer cover in an annular array. A circle of magnetic components is also fixedly installed on the bottom surface of the installation outer cover in an annular array. These two circles of magnetic components are exactly arranged on both sides of the electric coil. The rotating shaft drives the electric coil to rotate between the two circles of magnetic components and reciprocally cut the magnetic induction lines to generate current for power generation. This structure integrates the power generation assembly at the top of the rotating shaft and innovatively uses the rotational kinetic energy during the operation of the single-crystal silicon furnace for power generation. The electric coil is spliced by multiple groups of coils into an annular cover shape, increasing the effective area of cutting the magnetic induction lines and improving the power generation efficiency. The magnetic components on both sides form a closed magnetic field, ensuring that the electric coil continuously and stably generates induced current during rotation and realizing the efficient conversion of kinetic energy into electrical energy.
[0006] Preferably, a circle of L-shaped protruding plates with an integrated structure is provided on the bottom surface of the installation outer cover for installing the inner circle of magnetic components. The integrated design of the L-shaped protruding plates enhances the structural strength of the magnetic components on the bottom surface of the installation outer cover and avoids the loosening problem that may occur with traditional bolt fixation. This layout keeps the inner circle of magnetic components precisely parallel to the electric coil, reduces magnetic circuit losses, ensures uniform magnetic field distribution, and improves power generation stability.
[0007] Preferably, the magnetic component includes a fixing seat in the middle. The fixing seat is respectively connected to the inner wall of the installation outer cover and the L-shaped protruding plate. Magnet groups are fixedly connected to both sides of the fixing seat. The magnet groups are made of permanent magnet materials, and the magnetic pole strength of the magnet groups is 0.4T - 0.6T. When the magnetic field strength is within the range of 0.4T - 0.6T, the generated electricity during the working process can ensure that all the top components of the single-crystal silicon furnace can work normally, and at the same time, it will not cause more resource losses. The magnet groups being made of permanent magnet materials reduces the replacement frequency of the magnet groups. The magnet groups can be fixed through the fixing seat, and the fixing seat fixedly connects the magnet groups to the installation outer cover to ensure the stability of the magnet groups. Magnet groups can be installed on both sides of the fixing seat, and the magnetic field strength can be adjusted by superimposing the magnetic fields of the magnet groups through the number of magnet groups.
[0008] Preferably, the installation outer cover is made of fiberglass material, and the thickness of the installation outer cover is 2 mm - 5 mm. An integrated support frame is provided at the top of the installation outer cover, and the central position of the support frame is rotatably connected to the rotating shaft. The installation outer cover can play a role in fixing and supporting the magnetic component. Generally, the thickness between 2 mm and 5 mm is the best, which can not only achieve the protection effect but also avoid excessive mass. Moreover, the fiberglass material of the installation outer cover will not affect the magnetic field. The top support frame adopts a self-lubricating bearing design to reduce the friction loss of the rotating shaft and extend the service life.
[0009] Preferably, a sandwich outer cover is fixedly connected to the bottom of the installation outer cover. A frame for partitioning an independent space is fixedly connected to the outer wall of the sandwich outer cover by bolts. A connecting wire is fixedly connected to one end of the sandwich outer cover away from the installation outer cover. One end of the connecting wire is connected to a brush, and the brush is arranged in cooperation with the electric coil. The current is transmitted through the brush and the connecting wire. The sandwich outer cover and the frame form a modular structure, which is convenient for the maintenance and replacement of internal components. The contact between the brush and the electric coil uses a silver alloy material to reduce the resistance loss and ensure stable current conduction. The connecting wire uses a high-temperature resistant silicone insulation layer to adapt to the high-temperature environment at the furnace top and avoid circuit aging.
[0010] Preferably, rectifying components are fixedly connected in the independent spaces partitioned by the frame. The rectifying components are connected to the connecting wires. A battery pack is also fixedly installed on the inner wall of the frame, and the battery pack corresponds to the rectifying component one by one. The battery pack continuously provides electrical energy for the components at the top of the single crystal silicon furnace to ensure that the components at the top of the single crystal silicon furnace can operate normally. The rectifying component adopts a three-phase bridge rectifier circuit to convert alternating current into direct current to meet the power supply requirements of the top components. The battery pack corresponds to the rectifying component one by one to achieve shunt energy storage. When the power generation power fluctuates, it can be quickly compensated to ensure the continuity of power supply. The frame partition design enhances the heat dissipation effect and extends the service life of electronic components.
[0011] Preferably, an outer cylinder sleeve is sleeved on the outer wall of the rotating shaft. The bottom of the frame is fixedly installed on the top of the outer cylinder sleeve through a plurality of fixing rods to ensure the stability of the frame.
[0012] Preferably, a plurality of heat dissipation holes are evenly formed on the surface of the stable disk near the electric coil. The uniform distribution of the heat dissipation holes can take away the heat generated by the electric coil through natural convection or forced air cooling to prevent the coil from overheating and causing insulation aging. The pore channels adopt a diversion groove design to guide the air flow direction and enhance the heat dissipation efficiency, so that the electric coil can be kept within a safe temperature range during long-term operation.
[0013] Compared with the prior art, the present invention has the following beneficial effects: In the present invention, a power generation component driven by rotation using a rotating shaft is designed to supply power to each component at the top of a single crystal silicon furnace. Among them, the rotating shaft drives the electric coil to rotate in the magnetic component of the inner and outer rings. During the rotation process, the magnetic induction lines are reciprocally cut to generate an electric current. Then, the electric current is rectified by a rectifying component through a connecting wire and transmitted to a battery pack for storage, and then the battery pack supplies power to each component. The whole device does not require external wires, completely avoiding the problems of cable entanglement and breakage. It can also recover the kinetic energy of the original wasted rotating shaft for power generation, solve the problem of space occupation at the top of the single crystal silicon furnace, and greatly facilitate actual production. Brief Description of the Drawings
[0014] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 For the present invention Figure 1 An enlarged view of part A in it; Figure 3 It is a schematic three-dimensional structure diagram of the power generation component of the present invention; Figure 4 It is a schematic diagram of the internal structure of the sandwich outer cover of the present invention; Figure 5 It is a schematic diagram of the internal structure of the installation outer cover of the present invention; Figure 6 It is a schematic diagram of the position of the electric coil and the stabilizing disk of the present invention.
[0015] In the figure: 1, melting furnace; 2, extension cylinder; 3, rotating shaft; 4, outer cylinder sleeve; 41, fixing rod; 5, power generation component; 51, installation outer cover; 52, sandwich outer cover; 54, frame; 56, connecting wire; 561, rectifying component; 562, battery pack; 57, electric coil; 571, stabilizing disk; 58, magnetic component; 581, magnet group; 582, fixing seat. Detailed Description of the Invention
[0016] In order to make the technical means, creative features, achieved purposes and effects of the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.
[0017] As Figure 1 shown, the power supply structure for the components at the top of the single crystal silicon furnace includes a melting furnace 1. A precision motor is installed at the top of the melting furnace 1. The output end of the precision motor is connected to a rotating shaft 3, and the lower end of the rotating shaft 3 extends into the extension cylinder 2. As Figure 2 shown, a set of power generation components 5 is installed outside the upper end of the rotating shaft 3. The power generation component 5 includes a stabilizing disk 571. The stabilizing disk 571 is fixedly sleeved on the outer wall of the rotating shaft 3. An electric coil 57 is fixedly installed at the outer edge position of the stabilizing disk 571. The electric coil 57 is spliced by multiple groups of coils into a ring-shaped cover. As shown Figures 2 - 5 in the figure, the power generation assembly 5 further includes an installation outer cover 51. The installation outer cover 51 is made of fiberglass material, and the thickness of the installation outer cover 51 is 2 mm - 5 mm. The top of the installation outer cover 51 is provided with an integrated support frame, and the central position of the support frame is rotatably connected to the rotating shaft 3. An L-shaped protruding plate with an integrated structure is provided on the bottom surface of the installation outer cover 51 for installing the inner magnetic component 58.
[0018] As shown Figures 2 - 6 in the figure, a circle of magnetic components 58 is fixedly installed on the inner wall of the installation outer cover 51 in a circumferential array, and a circle of magnetic components 58 is also fixedly installed on the bottom surface of the installation outer cover 51 in a circumferential array. These two circles of magnetic components 58 are exactly arranged on both sides of the electric coil 57. The magnetic component 58 includes a fixed seat 582 placed in the middle. The fixed seat 582 is respectively connected to the inner wall of the installation outer cover 51 and the L-shaped protruding plate. Magnets groups 581 are fixedly connected to both sides of the fixed seat 582. The magnets groups 581 are made of permanent magnet material, and the magnetic pole strength of the magnets groups 581 is 0.4 T - 0.6 T.
[0019] As shown Figures 2 - 4 in the figure, the bottom of the installation outer cover 51 is fixedly connected to a sandwich outer cover 52. The outer wall of the sandwich outer cover 52 is fixedly connected with a frame 54 for partitioning an independent space by bolts. One end of the sandwich outer cover 52 away from the installation outer cover 51 is fixedly connected with a connecting wire 56. One end of the connecting wire 56 is connected to a brush, and the brush is arranged in cooperation with the electric coil 57.
[0020] As shown Figures 2 - 4 in the figure, rectifiers 561 are fixedly connected in the independent spaces partitioned by the frame 54. The rectifiers 561 are connected to the connecting wire 56. A battery pack 562 is also fixedly installed on the inner wall of the frame 54. The battery packs 562 correspond to the rectifiers 561 one by one. The bottom of the frame 54 is fixedly installed on the top of the outer cylinder sleeve 4 through a plurality of fixing rods 41. The outer cylinder sleeve 4 is sleeved on the outer wall of the rotating shaft 3.
[0021] In practical applications, high-purity polysilicon materials are loaded into a silicon nitride-coated melting furnace 1 and heated to 1420 °C in a vacuum argon environment to melt into a melt. A liquid bridge is formed by rotating a seed crystal in contact with the melt. After dislocation elimination through necking, the diameter is gradually increased to the target diameter, and then isodiametric growth is achieved through closed-loop control of laser diameter measurement. Finally, the growth is terminated and the temperature is decreased to form a single crystal ingot. During this process, the rotating shaft 3 is always driven to rotate by a precision motor, thereby driving the rotation of the stabilizing disk 571 fixedly connected thereto, and further driving the synchronous rotation of the electric coil 57 outside the stabilizing disk 571. Since the bottom of the frame 54 is fixedly installed at the top of the outer cylinder sleeve 4 through a plurality of fixing rods 41, and the outer cylinder sleeve 4 is sleeved outside the rotating shaft 3 and is fixedly immovable, the frame 54 is also fixedly immovable. The outer wall of the sandwich outer cover 52 is fixedly connected to the frame 54 by bolts, so the sandwich outer cover 52 is also fixedly immovable. At the same time, the bottom of the installation outer cover 51 is fixedly connected to the sandwich outer cover 52, so the installation outer cover 51 is also fixedly immovable. In this way, the two rings of magnetic components 58 fixedly installed on the inner wall and the bottom surface of the installation outer cover 51 are also fixedly immovable. In this way, only the electric coil 57 is driven to rotate by the rotating shaft 3, and the electric coil 57 rotates between the inner and outer rings of magnetic components 58. During the rotation process, the magnetic induction lines of the magnetic field generated by the magnetic components 58 can be reciprocally cut to generate an electric current. During the rotation of the electric coil 57, the generated electricity is transmitted through the connecting wire 56 by means of a brush. A plurality of sets of rectifying components 561 are installed in the middle of the frame 54 to rectify the current, and finally the electricity is stored through the battery pack 562 for use by the components at the top of the single crystal furnace.
[0022] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. What is described in the above embodiments and the specification only illustrates the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed. The scope of protection claimed by the present invention is defined by the appended claims and their equivalents.
Claims
1. Power supply structure for the top element of a single crystal silicon furnace, including a melting furnace (1), a stretching cylinder (2) is provided at the top of the melting furnace (1), a precision motor is installed at the top of the stretching cylinder (2), and an output end of the precision motor is connected to a rotating shaft (3), characterized in that: The lower end of the rotating shaft (3) extends into the extension cylinder (2), and a set of power generation components (5) is installed outside the upper end. The power generation components (5) include a stabilizing disc (571). The stabilizing disc (571) is fixedly sleeved on the outer wall of the rotating shaft (3). An electric coil (57) is fixedly installed at the outer edge position of the stabilizing disc (571). The electric coil (57) is spliced by multiple groups of coils into a ring-shaped cover; The power generation components (5) further include an installation outer cover (51). A circle of magnetic components (58) is fixedly installed on the inner wall of the installation outer cover (51) in a circular array. A circle of magnetic components (58) is also fixedly installed on the bottom surface of the installation outer cover (51) in a circular array. These two circles of magnetic components (58) are exactly arranged on both sides of the electric coil (57). The rotating shaft (3) drives the electric coil (57) to rotate between the two circles of magnetic components (58) and reciprocally cut the magnetic induction lines to generate current for power generation.
2. The power supply structure for the top element of the single crystal silicon furnace according to claim 1, wherein: A circle of L-shaped protruding plates with an integral structure is provided on the bottom surface of the installation outer cover (51) for installing the inner circle of magnetic components (58).
3. The power supply structure for the top element of the single-crystal silicon furnace according to claim 2, characterized in that: The magnetic component (58) includes a fixing seat (582) placed in the middle. The fixing seat (582) is respectively connected to the inner wall of the installation outer cover (51) and the L-shaped protruding plate. Permanent magnet groups (581) are fixedly connected to both sides of the fixing seat (582). The permanent magnet groups (581) are made of permanent magnet materials, and the magnetic pole strength of the permanent magnet groups (581) is 0.4T - 0.6T.
4. The power supply structure for the top element of the single-crystal silicon furnace according to claim 3, characterized in that: The installation outer cover (51) is made of fiberglass material, and the thickness of the installation outer cover (51) is 2mm - 5mm. An integral support frame is provided at the top of the installation outer cover (51), and the central position of the support frame is rotatably connected to the rotating shaft (3).
5. The power supply structure for the top element of a single crystal silicon furnace according to claim 4, characterized in that: The bottom of the installation outer cover (51) is fixedly connected to a sandwich outer cover (52). The outer wall of the sandwich outer cover (52) is fixedly connected by bolts to a frame (54) for partitioning an independent space. A connecting wire (56) is fixedly connected to one end of the sandwich outer cover (52) away from the installation outer cover (51). One end of the connecting wire (56) is connected to a carbon brush, and the carbon brush is arranged in cooperation with the electric coil (57).
6. The power supply structure for the top element of the single crystal silicon furnace according to claim 5, characterized in that: Rectifying components (561) are fixedly connected in the independent spaces partitioned by the frame (54). The rectifying components (561) are connected to the connecting wire (56). A battery pack (562) is also fixedly installed on the inner wall of the frame (54). The battery packs (562) correspond to the rectifying components (561) one by one.
7. The power supply structure for the top element of the single crystal silicon furnace according to claim 6, characterized in that: An outer cylinder sleeve (4) is sleeved on the outer wall of the rotating shaft (3). The bottom of the frame (54) is fixedly installed on the top of the outer cylinder sleeve (4) through a plurality of fixing rods (41).
8. The power supply structure for the top element of the single-crystal silicon furnace according to claim 1, characterized in that: A plurality of heat dissipation holes are evenly opened on the surface of the stabilizing disc (571) near the position of the electric coil (57).