Method and device for acquiring electron density profile and ionosphere parameters

Abstract

The invention relates to the technical field of geophysics, in particular to an electron density profile and ionosphere parameter acquisition method and device, and the method comprises the steps: inputting the detection time information and detection position information of target vertical TEC data into a preset IRI model, so as to obtain a first ionosphere parameter; calculating an initial ionosphere F2 layer critical frequency by using the target vertical TEC data to obtain a second ionosphere parameter; inputting the first ionized layer parameter and the second ionized layer parameter into a preset QPS model and a preset Epstein model to obtain electron densities of different heights in the ionized layer; and constructing an electron density profile model based on the electron densities of different heights. Therefore, the problems that in the prior art, the manufacturing cost and the operation cost are very high, the requirement of factual application cannot be met, errors are large, and the requirement of high-precision refraction error correction is difficult to meet are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of geophysics, and particularly relates to a method and device for obtaining an electron density profile and ionospheric parameters. Background Art

[0002] Accurate estimation of the ionospheric electron density is crucial for applications such as remote sensing systems, communications, and satellite positioning and navigation, and helps to mitigate the impact of adverse space weather events. However, due to many regular and irregular variations in the ionosphere, such as diurnal variations, seasonal variations, sporadic E layers, ionospheric storms, and solar activity cycle variations, there are still certain difficulties in three-dimensional ionospheric electron density modeling.

[0003] In related technologies, ionospheric sounding can be performed in the bottom ionosphere; the electron density profile below 80 km can be detected by incoherent scatter radar to further confirm multiple parameter information in the ionosphere; some models, such as the IRI (International Reference Ionosphere) model, can be used to predict the ionospheric electron density; and the TEC (Total Electronic Content) tomography algorithm for constructing the ionospheric electron density profile can also be utilized with a ground-based GNSS (Global Navigation Satellite System) receiving system.

[0004] However, in related technologies, the cost of construction and operation is extremely high, which cannot meet the requirements of practical applications, and the error is relatively large, making it difficult to meet the need for high-precision refraction error correction, and thus improvement is urgently needed. Summary of the Invention

[0005] The present invention provides a method and device for obtaining an electron density profile and ionospheric parameters to solve the problems in related technologies, such as extremely high construction and operation costs, inability to meet the requirements of practical applications, relatively large errors, and difficulty in meeting the need for high-precision refraction error correction.

[0006] An embodiment of the first aspect of the present invention provides a method for obtaining an electron density profile and ionospheric parameters, which is applied to the model construction stage. The method includes the following steps: inputting the detection time information and detection location information of the target vertical TEC data into a preset IRI model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere; calculating the initial critical frequency of the F2 layer of the ionosphere using the target vertical TEC data to obtain the second ionospheric parameters required for constructing the electron density profile model; inputting the first ionospheric parameters and the second ionospheric parameters into a preset QPS (Queries Per Second) model and a preset Epstein model to obtain the electron densities at different heights in the ionosphere; and constructing the electron density profile model based on the electron densities at different heights.

[0007] Optionally, in an embodiment of the present invention, the step of inputting the first ionospheric parameters and the second ionospheric parameters into a preset QPS model and a preset Epstein model to obtain the electron densities at different heights in the ionosphere includes: calculating the first electron density of the E layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the E layer in the preset QPS model; calculating the second electron density of the connection layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the E layer and the F1 layer in the preset QPS model; calculating the third electron density of the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F1 layer in the preset QPS model; calculating the fourth electron density of the connection layer between the F1 layer and the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the F1 layer and the F2 layer in the preset QPS model; calculating the fifth electron density of the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F2 layer in the preset QPS model; calculating the sixth electron density of other heights in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the preset Epstein model; and obtaining the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density.

[0008] Optionally, in an embodiment of the present invention, The expression of the first electron density may be, but is not limited to: , The expression of the second electron density may be, but is not limited to: , The expression of the third electron density can be but is not limited to: , The expression of the fourth electron density can be but is not limited to: , The expression of the fifth electron density can be but is not limited to: , The expression of the sixth electron density can be but is not limited to: , Wherein, is the peak electron density of the E layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the E layer, is any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the connecting layer between the E layer and the F1 layer, is the electron density of the connecting layer between the E layer and the F1 layer at any height, is the peak electron density of the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between the F1 layer and the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the connecting layer between the F1 layer and the F2 layer, is the electron density of the connecting layer between the F1 layer and the F2 layer at any height, is the peak electron density of the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the F2 layer, is the electron density of the F2 layer at any height, is the electron concentration at the height in the top ionosphere, is the maximum electron concentration among them, is the height at, is the height of the ionosphere relative to the ground, is the atmospheric scale height, is the hyperbolic secant function. Optionally, in an embodiment of the present invention, the expression of the critical frequency of the ionospheric F2 layer may be, but is not limited to: , where, is the critical frequency of the ionospheric F2 layer, with the unit of MHz, is the measured , with the unit of TECU, is the empirical value related to the month, with the unit of km.

[0009] Optionally, in an embodiment of the present invention, the expression of the electron density profile model may be, but is not limited to: , where, is the bottom height of the E layer, is the peak electron concentration height of the F2 layer, is the ionospheric top height, is the electron concentration at the height in the bottom ionosphere, is the electron concentration at the height in the top ionosphere, is the height of the ionosphere relative to the ground.

[0010] An embodiment of the second aspect of the present invention provides a method for obtaining an electron density profile and ionospheric parameters. Using the method for obtaining an electron density profile and ionospheric parameters as described above, it is applied to the model application stage. Wherein, the method includes the following steps: obtaining the actual vertical TEC data in the ionosphere; based on the actual vertical TEC data and a pre-constructed electron density profile model, obtaining the predicted vertical TEC data in the ionosphere, where the pre-constructed electron density profile model is obtained from electron densities at different heights; calculating the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; based on the initial vertical difference, updating the peak height of the ionospheric F2 layer in the first ionospheric parameter and the critical frequency of the ionospheric F2 layer in the second ionospheric parameter with a preset update condition until a vertical difference that meets the preset difference condition is obtained, and using the vertical difference to determine the final electron density, final first ionospheric parameter, and final second ionospheric parameter in the ionosphere.

[0011] Optionally, in an embodiment of the present invention, the expression of the vertical difference may be, but is not limited to: , where, is the actual vertical TEC data, is the predicted vertical TEC data, is the absolute value.

[0012] An embodiment of the third aspect of the present invention provides a device for obtaining an electron density profile and ionospheric parameters, which is applied to the model construction stage. Wherein, the device includes: a first acquisition module, configured to input the detection time information and detection position information of the target vertical TEC data into a preset IRI model to obtain first ionospheric parameters required for constructing an electron density profile model in the ionosphere; a first generation module, configured to calculate an initial ionospheric F2 layer critical frequency by using the target vertical TEC data to obtain second ionospheric parameters required for constructing the electron density profile model; a second generation module, configured to input the first ionospheric parameters and the second ionospheric parameters into a preset QPS model and a preset Epstein model to obtain the electron density at different heights in the ionosphere; a construction module, configured to construct the electron density profile model based on the electron density at different heights.

[0013] Optionally, in an embodiment of the present invention, the second generation module includes: a first calculation unit, configured to calculate a first electron density of the E layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the E layer in the preset QPS model; a second calculation unit, configured to calculate a second electron density of the connection layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the E layer and the F1 layer in the preset QPS model; a third calculation unit, configured to calculate a third electron density of the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F1 layer in the preset QPS model; a fourth calculation unit, configured to calculate a fourth electron density of the connection layer between the F1 layer and the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the F1 layer and the F2 layer in the preset QPS model; a fifth calculation unit, configured to calculate a fifth electron density of the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F2 layer in the preset QPS model; a sixth calculation unit, configured to calculate a sixth electron density at other heights in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the preset Epstein model; a generation unit, configured to obtain the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density.

[0014] Optionally, in an embodiment of the present invention, wherein, The expression of the first electron density may but is not limited to: , The expression of the second electron density can be but is not limited to: , The expression of the third electron density can be but is not limited to: , The expression of the fourth electron density can be but is not limited to: , The expression of the fifth electron density can be but is not limited to: , The expression of the sixth electron density can be but is not limited to: , where is the peak electron density of the E layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the E layer, is any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the connecting layer between the E layer and the F1 layer, is the electron density of the connecting layer between the E layer and the F1 layer at any height, is the peak electron density of the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between the F1 layer and the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the connecting layer between the F1 layer and the F2 layer, is the electron density of the connecting layer between the F1 layer and the F2 layer at any height, is the peak electron density of the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the F2 layer, is the electron density of the F2 layer at any height, is in the topside ionosphere the electron concentration at height is the maximum electron concentration among them, is height at is the height of the ionosphere relative to the ground, is the atmospheric scale height, is the hyperbolic secant function.

[0015] Optionally, in an embodiment of the present invention, the expression of the critical frequency of the F2 layer of the ionosphere may be, but is not limited to: , wherein, is the critical frequency of the F2 layer of the ionosphere, with the unit of MHz, is the measured , with the unit of TECU, is the empirical value related to the month, with the unit of km.

[0016] Optionally, in an embodiment of the present invention, the expression of the electron density profile model may be, but is not limited to: , wherein, is the bottom height of the E layer, is the height of the peak electron concentration of the F2 layer, is the top height of the ionosphere, is in the bottom ionosphere the electron concentration at the height of is in the top ionosphere the electron concentration at the height of is the height of the ionosphere relative to the ground.

[0017] An embodiment of the fourth aspect of the present invention provides a device for obtaining an electron density profile and ionospheric parameters, which is applied to the model application stage. Wherein, the device includes: a second acquisition module, configured to acquire actual vertical TEC data in the ionosphere; a third generation module, configured to obtain predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electron density profile model, where the pre-constructed electron density profile model is obtained from electron densities at different heights; a calculation module, configured to calculate an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; a determination module, configured to update the peak height of the F2 layer of the ionosphere in the first ionospheric parameters and the critical frequency of the F2 layer of the ionosphere in the second ionospheric parameters based on the initial vertical difference until a vertical difference that meets a preset difference condition is obtained, and use the vertical difference to determine the final electron density, the final first ionospheric parameters, and the final second ionospheric parameters in the ionosphere.

[0018] Optionally, in an embodiment of the present invention, the expression of the vertical difference may be, but is not limited to: , wherein, is the actual vertical TEC data, is the predicted vertical TEC data, is the absolute value.

[0019] An embodiment of the fifth aspect of the present invention provides an electronic device, including: a memory, a processor, and a computer program stored on the memory and executable on the processor, where the processor executes the program to implement the method for obtaining the electron density profile and ionospheric parameters as described in the above embodiments.

[0020] An embodiment of the sixth aspect of the present invention provides a computer-readable storage medium, where the computer-readable storage medium stores a computer program, and when the program is executed by a processor, the method for obtaining the electron density profile and ionospheric parameters as described above is implemented.

[0021] An embodiment of the seventh aspect of the present invention provides a computer program product, including a computer program, and when the program is executed, the method for obtaining the electron density profile and ionospheric parameters as described above is implemented.

[0022] Embodiments of the present invention can input the detection time information and detection position information in the target vertical TEC data into a preset IRI model to construct the first ionospheric parameters, and use the target vertical TEC data to construct the second ionospheric parameters. Then, by combining the preset QPS model and the preset Epstein model, the electron density at different heights is obtained, and an electron density profile model is constructed. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, it conforms to the characteristic that the actual ionosphere has obvious stratification, can more accurately reflect the change of the ionospheric electron concentration, has a simple algorithm, and is easy to program. Thus, it solves the problems in the related art, such as the cost and operation cost are very expensive, it cannot meet the needs of practical applications, and the error is large, making it difficult to meet the need for high-precision refraction error correction.

[0023] Additional aspects and advantages of the present invention will be given in part in the following description, become obvious in part from the following description, or be understood through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and / or additional aspects and advantages of the present invention will become obvious and easy to understand from the following description of the embodiments in conjunction with the drawings, where: Figure 1 is a flowchart of a method for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention; Figure 2It is a flowchart of the working principle of a method for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention; Figure 3 It is a schematic block diagram of an apparatus for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention; Figure 4 It is a flowchart of a method for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention; Figure 5 It is a flowchart of the working principle of a method for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention; Figure 6 It is a schematic diagram of the differences of various parameters of 24-hour data according to another embodiment of the present invention; Figure 7 It is a schematic block diagram of the optimal electron density profile according to another embodiment of the present invention; Figure 8 It is a flowchart of the working principle of a method for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention; Figure 9 It is a schematic block diagram of an apparatus for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention; Figure 10 It is a schematic structural diagram of an electronic device according to an embodiment of the present invention. Detailed Embodiment

[0025] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0026] The method and device for obtaining the electron density profile and ionospheric parameters according to the embodiments of the present invention will be described below with reference to the accompanying drawings. In view of the problems mentioned in the above background art, namely, the cost and operation cost are extremely expensive, it cannot meet the needs of practical applications, and the error is relatively large, making it difficult to meet the need for high-precision refraction error correction, the present invention provides a method for obtaining the electron density profile and ionospheric parameters. In this method, the detection time information and detection position information in the target vertical TEC data can be input into a preset IRI model to construct the first ionospheric parameters, and the second ionospheric parameters can be constructed using the target vertical TEC data. Then, by combining the preset QPS model and the preset Epstein model, the electron density at different heights can be obtained, and an electron density profile model can be constructed. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, it conforms to the characteristic that the actual ionosphere has obvious stratification, can more accurately reflect the change of ionospheric electron concentration, and the algorithm is simple and easy to program. Thus, the problems in the related art, such as extremely expensive cost and operation cost, inability to meet the needs of practical applications, and relatively large error, making it difficult to meet the need for high-precision refraction error correction, are solved.

[0027] Specifically, Figure 1 FIG. is a flowchart of a method for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention.

[0028] As Figure 1 shown, the method for obtaining the electron density profile and ionospheric parameters is applied to the model construction stage, and the method includes the following steps: In step S101, the detection time information and detection position information of the target vertical TEC data are input into a preset IRI model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere.

[0029] It can be understood that in the embodiments of the present invention, the detection time of the target vertical TEC data can be coordinated universal time or other times, which can be specifically set by those skilled in the art according to the actual situation, and the present invention does not make specific limitations; the detection position information can include, but is not limited to, the longitude information and latitude information of the detection, etc., and the present invention does not make specific limitations.

[0030] Furthermore, in the embodiments of the present invention, the first ionospheric parameters can include, but are not limited to: , , , , , , , , etc., and the present invention does not make specific limitations. Among them, is the height of the bottom of the F2 layer of the ionosphere, is the peak height of the F2 layer of the ionosphere, is the bottom height of the F1 layer of the ionosphere, is the critical frequency of the F1 layer of the ionosphere, is the peak height of the F1 layer of the ionosphere, is the critical frequency of the E layer of the ionosphere, is the peak height of the E layer of the ionosphere, is the bottom height of the E layer of the ionosphere As a possible implementation manner, the embodiments of the present invention can input the detection time information of the obtained target vertical TEC data, such as Coordinated Universal Time, etc., and the detection location information, such as the detected longitude information and latitude information, etc., into a preset IRI model to calculate the first ionospheric parameters required for constructing the electron density profile model, such as , , , , , , , , etc.

[0031] Exemplarily, the detection time of the target vertical TEC data in the embodiments of the present invention is XX:XX on XX / XX / XX, and the detection location is XX degrees east longitude and XX degrees north latitude. Further, the embodiments of the present invention input the three parameters of the detection time, detection longitude, and detection latitude into the preset IRI model, and calculate the first ionospheric parameters, which are respectively: , , , , , , , .

[0032] In step S102, the initial critical frequency of the F2 layer of the ionosphere is calculated using the target vertical TEC data to obtain the second ionospheric parameter required for constructing the electron density profile model. Among them, the expression of the critical frequency of the F2 layer of the ionosphere can be but is not limited to: , wherein, is the critical frequency of the F2 layer of the ionosphere, with the unit of MHz, is the measured , with the unit of TECU, is the empirical value related to the month, with the unit of km.

[0033] It can be understood that the second ionospheric parameter in the embodiments of the present invention can be understood as the critical frequency of the F2 layer of the ionosphere.

[0034] In the actual implementation process, the embodiment of the present invention can calculate the initial critical frequency of the ionospheric F2 layer based on the target vertical TEC data, and use it as the second ionospheric parameter required for constructing the electron density profile model. Among them, the expression of the critical frequency of the ionospheric F2 layer can be but is not limited to: , (1) Wherein, is the critical frequency of the ionospheric F2 layer, with the unit of MHz, is the measured , with the unit of TECU (1 TECU = electrons / square meter), is an empirical value related to the month, with the unit of km.

[0035] Furthermore, in the embodiment of the present invention, The expression of can be but is not limited to: , (2) Wherein, is the month for detecting .

[0036] Exemplarily, in the embodiment of the present invention, the satellite altitude is taken as 2000 km, the target vertical TEC is 9.58 TECU, and the critical frequency of the ionospheric F2 layer is calculated by formulas (1) and (2). Among them, The value of is determined according to the month when the target vertical TEC is obtained. For example, if the month is January, then , and substitute it into formula (2), and then obtain , and then substitute it into formula (1) to calculate the initial critical frequency of the ionospheric F2 layer.

[0037] In step S103, the first ionospheric parameter and the second ionospheric parameter are input into the preset QPS model and the preset Epstein model to obtain the electron density at different altitudes in the ionosphere.

[0038] It can be understood that in the embodiment of the present invention, the preset QPS model is used for calculating the electron concentration in the bottom ionosphere, and the preset Epstein model is used for calculating the electron concentration in the top ionosphere.

[0039] Those skilled in the art can understand that in the embodiment of the present invention, when the satellite altitude is determined, the first ionospheric parameter and the second ionospheric parameter can be input into the preset QPS model and the preset Epstein model, and then the electron density at different altitudes can be obtained, so as to construct the electron density profile model.

[0040] Exemplarily, in an embodiment of the present invention, the satellite altitude is taken as 2000 km, the first ionospheric parameter, the second ionospheric parameter, and the satellite altitude are input into a preset QPS model and a preset Epstein model, the electron densities at different altitudes are obtained, and an electron density profile model is constructed.

[0041] Optionally, in an embodiment of the present invention, the first ionospheric parameter and the second ionospheric parameter are input into a preset QPS model and a preset Epstein model to obtain the electron densities at different altitudes in the ionosphere, including: calculating the first electron density of the E layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the forward QP model of the E layer in the preset QPS model; calculating the second electron density of the connection layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the reverse QP model of the connection layer between the E layer and the F1 layer in the preset QPS model; calculating the third electron density of the F1 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the forward QP model of the F1 layer in the preset QPS model; calculating the fourth electron density of the connection layer between the F1 layer and the F2 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the reverse QP model of the connection layer between the F1 layer and the F2 layer in the preset QPS model; calculating the fifth electron density of the F2 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the forward QP model of the F2 layer in the preset QPS model; calculating the sixth electron density at other altitudes in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the preset Epstein model; and obtaining the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density. Among them, the expression of the first electron density can be but is not limited to: , The expression of the second electron density can be but is not limited to: , The expression of the third electron density can be but is not limited to: , The expression of the fourth electron density can be but is not limited to: , The expression of the fifth electron density can be but is not limited to: , The expression of the sixth electron density can be but is not limited to: , Among them, is the peak value of the electron density of the E layer, has no actual physical meaning, is the geocentric distance of the peak electron density in the E layer, is any height, is the electron density in the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the connecting layer between the E layer and the F1 layer, is the electron density in the connecting layer between the E layer and the F1 layer at any height, is the peak electron density of the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the F1 layer, is the electron density in the F1 layer at any height, is the peak electron density of the connecting layer between the F1 layer and the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the connecting layer between the F1 layer and the F2 layer, is the electron density in the connecting layer between the F1 layer and the F2 layer at any height, is the peak electron density of the F2 layer, has no actual physical meaning, is the geocentric height of the peak electron density of the F2 layer, is the electron density at any height in the F2 layer, is in the topside ionosphere the electron concentration at height, is the maximum electron concentration among them, is the height at, is the height of the ionosphere relative to the ground, is the scale height of the atmosphere, is the hyperbolic secant function.

[0042] It can be understood that the bottom ionosphere in the embodiments of the present invention is characterized by a preset QPS model. Among them, the E layer, F1 layer, and F2 layer are represented by the forward QP model, while the connecting layer between the E layer and the F1 layer and the connecting layer between the F1 layer and the F2 layer are represented by the reverse QP model. From bottom to top, the QP model expressions for each layer are as follows: (a) For the E layer, that is, the expression of the first electron density can be but is not limited to: , (3) (b) For the connecting layer between the E layer and the F1 layer, that is, the expression of the second electron density can be but is not limited to: , (4) (c) The expression of F1 layer, i.e. the third electron density, can be but is not limited to: , (5) (d) The connecting layer of the F1 layer and the F2 layer, that is, the expression of the fourth electron density can be, but is not limited to,: , (6) (e) The expression of F2 layer, i.e. the fifth electron density, can be, but is not limited to,: , (7) Furthermore, in an embodiment of the present invention, , (8) , (9) , (10) , (11) , (12) , (13) , (14) , (15) , (16) , (17) Furthermore, the embodiment of the present invention can calculate the electron concentration profile of the ionosphere according to the preset QPS model, which requires nine parameters, which may be but are not limited to: (F2 layer peak electron concentration), (the distance between the peak electron concentration of the F2 layer and the center of the earth), (The half thickness of the F2 layer, i.e. the distance between the peak electron concentration of the F2 layer and the minimum electron concentration of the F2 layer, the same applies below); (F1 layer peak electron concentration), (the distance between the peak electron concentration of the F1 layer and the center of the earth), (F1 layer half thickness); (E layer peak electron concentration), (the distance between the peak electron concentration of the E layer and the center of the earth), (E layer half thickness).

[0043] Furthermore, in an embodiment of the present invention, , and The expression can be, but is not limited to: , (18) ,(19) ,(20) Among them, is the radius of the earth, taking 6370 km, 、 、 are obtained from the above.

[0044] Furthermore, in the embodiments of the present invention, 、 and The expressions of can be but are not limited to:[[]]END]] ,(21) ,(22) ,(23) Among them, 、 、 、 、 、 are obtained from the above.

[0045] Furthermore, in the embodiments of the present invention, the peak electron concentration of the F2 layer is related to the critical frequency of the F2 layer, and its general expression can be but is not limited to:[[]]END]] ,(24) Among them, is the electron charge, and its value is C, is the permittivity of free space, and its value is F / m, is the electron mass, and its value is kg, is the critical frequency, with the unit of Hz, represents the electron concentration, with the unit of m-3.

[0046] Furthermore, the embodiments of the present invention can calculate 、 and The expressions of can be but are not limited to:[[]]END]] ,(25) ,(26) ,(27) Among them, 、 and are obtained from the above.

[0047] In addition, it should be noted that the top ionosphere in the embodiments of the present invention is characterized by a preset Epstein model, that is, it can be used to calculate the sixth electron density, and its expression can be but is not limited to: , (28) Those skilled in the art can understand that the embodiments of the present invention can calculate the first electron density using the forward QP model of the E layer in the preset QPS model, the second electron density using the reverse QP model of the connection layer between the E layer and the F1 layer, the third electron density using the forward QP model of the F1 layer, the fourth electron density using the reverse QP model of the connection layer between the F1 layer and the F2 layer, the fifth electron density using the forward QP model of the F2 layer, and calculate the sixth electron density using the preset Epstein model, so as to obtain the electron density of the ionosphere.

[0048] In step S104, an electron density profile model is constructed based on the electron densities at different heights. Among them, the expression of the electron density profile model can be but is not limited to: , Among them, is the bottom height of the E layer, is the peak electron concentration height of the F2 layer, is the top height of the ionosphere, is the electron concentration at the height in the bottom ionosphere, is the electron concentration at the height in the top ionosphere, is the height of the ionosphere relative to the ground.

[0049] In the actual execution process, the embodiments of the present invention can perform integral calculations on the electron densities at different heights, and then construct an electron density profile model. Among them, the expression of the electron density profile model can be but is not limited to: , (29) Exemplarily, the embodiments of the present invention can perform integral calculations on the electron density, and then construct an electron density profile model. Among them, the expression of the electron density profile model can be but is not limited to: , (30) Among them, is the top height of the ionosphere, is the electron concentration at the height in the bottom ionosphere, is the electron concentration at the height in the top ionosphere.

[0050] Among them, Figure 2It is a flowchart of the working principle of a method for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention.

[0051] Step S201: Obtain the detection time information and detection location information of the target vertical TEC data.

[0052] Step S202: Determine the preset IRI model.

[0053] Step S203: Construct the first ionospheric parameters through the target vertical TEC data and the preset IRI model.

[0054] Step S204: Determine the satellite altitude.

[0055] Step S205: Calculate the initial ionospheric F2 layer critical frequency using the target vertical TEC data to construct the second ionospheric parameters.

[0056] Step S206: Calculate the electron density at different altitudes through the preset QPS model and the preset Epstein model.

[0057] Step S207: Perform integral calculation on the electron density at different altitudes to construct an electron density profile model.

[0058] It can be understood that the embodiment of the present invention can first input the two parameters of detection time and detection location in the target vertical TEC data, and obtain the first ionospheric parameters of the ionosphere according to the preset IRI model; then calculate the initial ionospheric F2 layer critical frequency using the target vertical TEC data to obtain the second ionospheric parameters of the ionosphere; then substitute the first ionospheric parameters, the second ionospheric parameters and the satellite altitude into the preset QPS model and the preset Epstein model to calculate the electron density at different altitudes, and further complete the construction of the electron density profile model.

[0059] According to the method for obtaining electron density profiles and ionospheric parameters proposed by the embodiment of the present invention, the detection time information and detection location information in the target vertical TEC data can be input into the preset IRI model to construct the first ionospheric parameters, and the second ionospheric parameters can be constructed using the target vertical TEC data. Then, in combination with the preset QPS model and the preset Epstein model, the electron density at different altitudes can be obtained to construct an electron density profile model. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, it conforms to the characteristic that the actual ionosphere has obvious stratification, can more accurately reflect the change of ionospheric electron concentration, has a simple algorithm and is easy to program. Thus, it solves the problems in the related technology, such as the construction cost and operation cost being very expensive, not meeting the needs of actual applications, and having a large error and being difficult to meet the needs of high-precision refraction error correction.

[0060] Next, an apparatus for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0061] Figure 3 FIG. is a block diagram of an apparatus for obtaining an electron density profile and ionospheric parameters according to an embodiment of the present invention.

[0062] As Figure 3 shown, the apparatus 30 for obtaining an electron density profile and ionospheric parameters is applied to the model construction stage. Among them, the obtaining apparatus 30 includes: a first obtaining module 301, a first generating module 302, a second generating module 303, and a constructing module 304.

[0063] Among them, the first obtaining module 301 is configured to input the detection time information and detection position information of the target vertical TEC data into a preset IRI model to obtain first ionospheric parameters required for constructing an electron density profile model in the ionosphere.

[0064] The first generating module 302 is configured to calculate the initial critical frequency of the ionospheric F2 layer by using the target vertical TEC data to obtain second ionospheric parameters required for constructing an electron density profile model.

[0065] The second generating module 303 is configured to input the first ionospheric parameters and the second ionospheric parameters into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere.

[0066] The constructing module 304 is configured to construct an electron density profile model based on the electron densities at different heights.

[0067] Optionally, in an embodiment of the present invention, the second generating module 303 includes: a first calculation unit, a second calculation unit, a third calculation unit, a fourth calculation unit, a fifth calculation unit, a sixth calculation unit, and a generating unit.

[0068] Among them, the first calculation unit is configured to calculate the first electron density of the E layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the E layer in the preset QPS model.

[0069] The second calculation unit is configured to calculate the second electron density of the connection layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the E layer and the F1 layer in the preset QPS model.

[0070] The third calculation unit is configured to calculate the third electron density of the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F1 layer in the preset QPS model.

[0071] The fourth calculation unit is configured to calculate the fourth electron density of the connection layer between the F1 layer and the F2 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the reverse QP model of the connection layer between the F1 layer and the F2 layer in the preset QPS model.

[0072] The fifth calculation unit is configured to calculate the fifth electron density of the F2 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the forward QP model of the F2 layer in the preset QPS model.

[0073] The sixth calculation unit is configured to calculate the sixth electron density at other altitudes in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter, and the preset Epstein model.

[0074] The generation unit is configured to obtain the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density.

[0075] Optionally, in an embodiment of the present invention, The expression of the first electron density can be but is not limited to: , The expression of the second electron density can be but is not limited to: , The expression of the third electron density can be but is not limited to: , The expression of the fourth electron density can be but is not limited to: , The expression of the fifth electron density can be but is not limited to: , The expression of the sixth electron density can be but is not limited to: , Wherein, is the peak electron density of the E layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the E layer, is any altitude, is the electron density of the E layer at any altitude, is the peak electron density of the connection layer between the E layer and the F1 layer, has no actual physical meaning, is the geocentric distance of the peak electron density of the connection layer between the E layer and the F1 layer, is the electron density of the connection layer between the E layer and the F1 layer at any altitude, is the peak electron density of the F1 layer, which has no actual physical meaning, is the geocentric distance of the peak electron density of the F1 layer, is the electron density of the F1 layer at any altitude, is the peak electron density of the connecting layer between the F1 layer and the F2 layer, which has no actual physical meaning, is the geocentric altitude of the peak electron density of the connecting layer between the F1 layer and the F2 layer, is the electron density of the connecting layer between the F1 layer and the F2 layer at any altitude, is the peak electron density of the F2 layer, which has no actual physical meaning, is the geocentric altitude of the peak electron density of the F2 layer, is the electron density of the F2 layer at any altitude, is in the topside ionosphere the electron concentration at altitude, is the maximum electron concentration among them, is the altitude at, is the altitude of the ionosphere relative to the ground, is the atmospheric scale height, is the hyperbolic secant function.

[0076] Optionally, in an embodiment of the present invention, the expression of the critical frequency of the F2 layer of the ionosphere can be but is not limited to: , wherein, is the critical frequency of the F2 layer of the ionosphere, with the unit of MHz, is the measured , with the unit of TECU, is the empirical value related to the month, with the unit of km.

[0077] Optionally, in an embodiment of the present invention, the expression of the electron density profile model can be but is not limited to: , wherein, is the bottom height of the E layer, is the height of the peak electron concentration of the F2 layer, is the height of the topside of the ionosphere, is in the bottom ionosphere the electron concentration at altitude, is in the topside ionosphere the electron concentration at altitude, is the altitude of the ionosphere relative to the ground.

[0078] It should be noted that the foregoing explanations of the embodiments of the method for obtaining the electron density profile and ionospheric parameters are also applicable to the apparatus for obtaining the electron density profile and ionospheric parameters of this embodiment, and will not be elaborated here.

[0079] The apparatus for obtaining the electron density profile and ionospheric parameters according to the embodiments of the present invention can input the detection time information and detection position information in the target vertical TEC data into a preset IRI model to construct the first ionospheric parameters, and use the target vertical TEC data to construct the second ionospheric parameters. Then, by combining the preset QPS model and the preset Epstein model, the electron densities at different heights are obtained, and an electron density profile model is constructed. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, it conforms to the characteristic that the actual ionosphere has obvious stratification, can more accurately reflect the change of the ionospheric electron concentration, has a simple algorithm and is easy to program. Thus, the problems in the related art are solved, such as the high cost and operation cost, which cannot meet the needs of actual applications, and the large error, which is difficult to meet the needs of high-precision refraction error correction.

[0080] The above embodiments describe the model construction stage. The embodiments of the model application stage will be described below.

[0081] Figure 4 It is a flowchart of a method for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention.

[0082] As Figure 4 shown, the method for obtaining the electron density profile and ionospheric parameters is applied to the model application stage, and the method includes the following steps: In step S401, actual vertical TEC data in the ionosphere is obtained.

[0083] In some embodiments, the embodiments of the present invention can first obtain the actual vertical TEC data in the ionosphere and obtain the detection time information and detection position information of the data.

[0084] In step S402, based on the actual vertical TEC data and the pre-constructed electron density profile model, predicted vertical TEC data in the ionosphere is obtained, where the pre-constructed electron density profile model is obtained from electron densities at different heights.

[0085] In some embodiments, the embodiments of the present invention can obtain the first actual ionospheric parameters and the second actual ionospheric parameters required for the pre-constructed electron density profile model based on the actual vertical TEC data, and input the first actual ionospheric parameters and the second actual ionospheric parameters into the pre-constructed electron density profile model, and then calculate the predicted vertical TEC data.

[0086] Exemplarily, embodiments of the present invention can calculate predicted vertical TEC data in combination with formula (29) or formula (30).

[0087] In step S403, an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data is calculated.

[0088] In some embodiments, embodiments of the present invention can calculate an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data, which can be but is not limited to expressed as .

[0089] In step S404, based on the initial vertical difference, the peak height of the F2 layer of the ionosphere in the first ionospheric parameter and the critical frequency of the F2 layer of the ionosphere in the second ionospheric parameter are updated with a preset update condition until a vertical difference that meets the preset difference condition is obtained, and the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere are determined using the vertical difference. Among them, the expression of the vertical difference can be but is not limited to: , wherein, is the actual vertical TEC data, is the predicted vertical TEC data, is the absolute value.

[0090] In some embodiments, embodiments of the present invention can update the peak height of the F2 layer of the ionosphere and the critical frequency of the F2 layer of the ionosphere based on the initial vertical difference under certain conditions, and then obtain a vertical difference that meets certain difference conditions, thereby determining the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere. Among them, the certain conditions and the certain difference conditions can be set by those skilled in the art according to the actual situation, and the present invention does not make specific limitations. Among them, the expression of the vertical difference can be but is not limited to: , (31) wherein, is the actual vertical TEC data, with the unit of TECU, is the predicted vertical TEC data, with the unit of TECU, is the absolute value.

[0091] Exemplarily, embodiments of the present invention can traverse in the range of ±2 MHz with a step size of 0.1 MHz, and traverse in the range of ±25 km with a step size of 5 km. The updated , Re - execute steps S402 and S403 with the other seven ionospheric parameters to determine the vertical difference The result with the smallest value, thereby obtaining the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter.

[0092] Next, a specific embodiment is used to introduce the working principle of the method for obtaining the electron density profile and ionospheric parameters proposed in the embodiments of the present invention.

[0093] Figure 5 It is a flowchart of the working principle of a method for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention.

[0094] Step S501: Obtain actual vertical TEC data.

[0095] Step S502: Input it into a pre - constructed electron density profile model to obtain predicted vertical TEC data.

[0096] Step S503: Calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data.

[0097] Step S504: Update the peak height of the ionospheric F2 layer and the critical frequency of the ionospheric F2 layer until the vertical difference meets a certain difference condition.

[0098] Step S505: Determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter.

[0099] It can be understood that the embodiments of the present invention can calculate the predicted vertical TEC data through a pre - constructed electron density profile model, compare the actual vertical TEC data with the predicted vertical TEC data to obtain the vertical difference; then continuously adjust the first actual ionospheric parameter and the second actual ionospheric parameter, update the electron density profile model, recalculate the predicted vertical TEC data, and compare it with the actual vertical TEC data. Finally, select the electron density profile and ionospheric parameters with the smallest vertical difference as the final result.

[0100] In addition, in order to verify the performance of the method for obtaining the electron density profile and ionospheric parameters in the embodiments of the present invention, data for 24 hours of a day is taken, with each hour as a group of data, and the optimal value, optimal value, optimal value and the corresponding model parameters are compared. The schematic diagram of the results is as shown in Figures 6 - 7 shown.

[0101] Furthermore, in the embodiments of the present invention, obtain optimal value, optimal value, The process for the optimal value is as follows: Step S801: Obtain the actual vertical TEC data.

[0102] Among them, in the embodiment of the present invention, the detection time of the actual vertical TEC data is XX:XX on XX / XX / XX, and the detection location is XX degrees east longitude and XX degrees north latitude.

[0103] Step S802: Input the detection time and detection location into a preset IRI model to calculate eight ionospheric parameters.

[0104] Among them, in the embodiment of the present invention, the eight ionospheric parameters can be but are not limited to: , , , , , , , .

[0105] Step S803: Calculate the initial based on the actual vertical TEC data as the ninth ionospheric parameter.

[0106] Step S804: Take the satellite altitude as 2000 km, and input the nine ionospheric parameters and the satellite altitude into a preset QPS model and a preset Epstein model to calculate the electron density at different altitudes.

[0107] Step S805: Perform integral calculation on the electron density at different altitudes to obtain an electron density profile model.

[0108] Step S806: Use the electron density profile model to calculate the predicted vertical TEC data.

[0109] Step S807: Calculate the error between the actual vertical TEC data and the predicted vertical TEC data to obtain a vertical difference.

[0110] Step S808: Traverse within the range of ±2 MHz with a step size of 0.1 MHz, and traverse within the range of ±25 km with a step size of 5 km to update the parameters and . Re-execute steps S804 - S807 and record the result with a smaller vertical difference.

[0111]

[0112] Step S809: Take the electron density and ionospheric parameters with the smallest vertical difference as the final result.

[0112] According to the method for obtaining the electron density profile and ionospheric parameters proposed in the embodiments of the present invention, the obtained actual vertical TEC data can be input into a pre-constructed electron density profile model, and then the predicted vertical TEC data can be obtained, and the vertical difference between the two can be calculated. The peak height of the F2 layer of the ionosphere and the critical frequency of the F2 layer of the ionosphere are updated through certain update conditions, and then the vertical difference that meets certain difference conditions is obtained, so as to determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere. Through the pre-constructed electron density profile model, it conforms to the characteristic that there are obvious layers in the actual ionosphere, can more accurately reflect the change of the electron concentration in the ionosphere, has a simple algorithm, and is easy to program. Thus, it solves the problems in the related technology that the construction cost and operation cost are very expensive, cannot meet the needs of actual applications, and have large errors and are difficult to meet the needs of high-precision refraction error correction, etc.

[0113] Next, a device for obtaining an electron density profile and ionospheric parameters proposed according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0114] Figure 9 FIG. is a block diagram of a device for obtaining an electron density profile and ionospheric parameters according to another embodiment of the present invention.

[0115] As Figure 9 shown, the device 90 for obtaining an electron density profile and ionospheric parameters is applied to the model application stage. Among them, the obtaining device 90 includes: a second obtaining module 901, a third generating module 902, a calculating module 903, and a determining module 904.

[0116] Among them, the second obtaining module 901 is used to obtain the actual vertical TEC data in the ionosphere.

[0117] The third generating module 902 is used to obtain the predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electron density profile model, where the pre-constructed electron density profile model is obtained from the electron densities at different heights.

[0118] The calculating module 903 is used to calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data.

[0119] The determining module 904 is used to update the peak height of the F2 layer of the ionosphere in the first ionospheric parameter and the critical frequency of the F2 layer of the ionosphere in the second ionospheric parameter based on the initial vertical difference with a preset update condition until a vertical difference that meets the preset difference condition is obtained, and use the vertical difference to determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere.

[0120] Optionally, in an embodiment of the present invention, the expression of the vertical difference may be, but is not limited to: , where is the actual vertical TEC data, is the predicted vertical TEC data, is the absolute value.

[0121] It should be noted that the foregoing explanations of the embodiments of the method for obtaining the electron density profile and ionospheric parameters also apply to the device for obtaining the electron density profile and ionospheric parameters in this embodiment, and will not be elaborated here.

[0122] According to the device for obtaining the electron density profile and ionospheric parameters proposed in the embodiments of the present invention, the obtained actual vertical TEC data can be input into a pre-constructed electron density profile model, and then the predicted vertical TEC data can be obtained, and the vertical difference between the two can be calculated. The peak height of the ionospheric F2 layer and the critical frequency of the ionospheric F2 layer are updated through certain update conditions, and then the vertical difference that meets certain difference conditions is obtained, so as to determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere. Through the pre-constructed electron density profile model, it conforms to the characteristics of the actual ionosphere with obvious stratification, can more accurately reflect the change of the ionospheric electron concentration, has a simple algorithm, and is easy to program. Thus, the problems in the related art, such as the high cost and operation cost, cannot meet the needs of actual applications, and the error is large and it is difficult to meet the needs of high-precision refraction error correction, etc., are solved.

[0123] Figure 10 FIG. is a schematic structural diagram of an electronic device according to an embodiment of the present invention. The electronic device may include: A memory 1001, a processor 1002, and a computer program stored on the memory 1001 and executable on the processor 1002.

[0124] When the processor 1002 executes the program, it implements the method for obtaining the electron density profile and ionospheric parameters provided in the above embodiment.

[0125] Further, the electronic device further includes: A communication interface 1003 for communication between the memory 1001 and the processor 1002.

[0126] The memory 1001 is used to store a computer program executable on the processor 1002.

[0127] The memory 1001 may include a high-speed RAM memory, and may also include non-volatile memory, such as at least one disk memory.

[0128] If the memory 1001, the processor 1002, and the communication interface 1003 are implemented independently, the communication interface 1003, the memory 1001, and the processor 1002 can be interconnected via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of simplicity in representation, Figure 10 only a thick line is used to represent it in the figure, but it does not mean that there is only one bus or one type of bus.

[0129] Optionally, in a specific implementation, if the memory 1001, the processor 1002, and the communication interface 1003 are integrated on a single chip, the memory 1001, the processor 1002, and the communication interface 1003 can communicate with each other through an internal interface.

[0130] The processor 1002 may be a Central Processing Unit (CPU), or an Application Specific Integrated Circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention.

[0131] The embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, the method for obtaining the electron density profile and ionospheric parameters as described above is implemented.

[0132] The embodiments of the present invention also provide a computer program product, including a computer program, and when the program is executed, the method for obtaining the electron density profile and ionospheric parameters as described above is implemented.

[0133] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or N embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0134] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "N" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0135] Any process or method description shown in the flowchart or described in other ways herein can be understood as representing a module, segment, or part of code including one or N executable instructions for realizing a customized logic function or process, and the scope of the preferred embodiments of the present invention includes additional implementations, where the functions can be executed in a substantially simultaneous manner or in the reverse order according to the involved functions, rather than in the order shown or discussed, which should be understood by those skilled in the art to which the embodiments of the present invention pertain.

[0136] The logic and / or steps represented in the flowchart or otherwise described herein can, for example, be considered a definitional sequence list of executable instructions for implementing logical functions, and can be embodied specifically in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from the instruction execution system, apparatus, or device. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium include the following: an electrical connection (electronic device) having one or N wirings, a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable medium on which the program can be printed, since the program can be obtained electronically by optically scanning the paper or other medium, followed by editing, deciphering, or otherwise processing as appropriate, and then storing it in a computer memory.

[0137] It should be understood that various parts of the present invention can be implemented by hardware, software, firmware, or a combination thereof. In the above-described embodiments, the N steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), and the like.

[0138] Those of ordinary skill in the art of this technology can understand that all or part of the steps carried by the method of the above embodiments can be completed by instructing relevant hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiments.

[0139] In addition, each functional unit in various embodiments of the present invention may be integrated into one processing module, or each unit may exist physically alone, or two or more units may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. When the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0140] The above-mentioned storage medium may be a read-only memory, a magnetic disk or an optical disc, etc. Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for obtaining electron density profiles and ionospheric parameters, characterized in that, Applied to the model construction phase, wherein the method comprises the following steps: Input the detection time information and detection location information of the target vertical total electron content (TEC) data into a preset International Reference Ionosphere (IRI) model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere; Calculate the initial critical frequency of the ionospheric F2 layer using the target vertical TEC data to obtain the second ionospheric parameters required for constructing the electron density profile model; Input the first ionospheric parameters and the second ionospheric parameters into a preset queries per second (QPS) model and a preset Epstein model to obtain the electron densities at different heights in the ionosphere; Construct the electron density profile model based on the electron densities at different heights.

2. The method according to claim 1, wherein The step of inputting the first ionospheric parameters and the second ionospheric parameters into a preset QPS model and a preset Epstein model to obtain the electron densities at different heights in the ionosphere includes: Calculate the first electron density of the E layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the E layer in the preset QPS model; Calculate the second electron density of the connection layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the E layer and the F1 layer in the preset QPS model; Calculate the third electron density of the F1 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F1 layer in the preset QPS model; Calculate the fourth electron density of the connection layer between the F1 layer and the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the reverse QP model of the connection layer between the F1 layer and the F2 layer in the preset QPS model; Calculate the fifth electron density of the F2 layer in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the forward QP model of the F2 layer in the preset QPS model; Calculate the sixth electron density at other heights in the ionosphere based on the first ionospheric parameters, the second ionospheric parameters, and the preset Epstein model; Obtain the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density.

3. The method according to claim 2, wherein Wherein, The expression of the first electron density is: ， The expression of the second electron density is: ， The expression of the third electron density is: ， The expression of the fourth electron density is: ， The expression of the fifth electron density is: ， The expression of the sixth electron density is: ， Among them, is the peak electron density of the E layer, which has no actual physical meaning, is the geocentric distance of the peak electron density of the E layer, is any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, which has no actual physical meaning, is the geocentric distance of the peak electron density of the connecting layer between the E layer and the F1 layer, is the electron density of the connecting layer between the E layer and the F1 layer at any height, is the peak electron density of the F1 layer, which has no actual physical meaning, is the geocentric distance of the peak electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between the F1 layer and the F2 layer, which has no actual physical meaning, is the geocentric height of the peak electron density of the connecting layer between the F1 layer and the F2 layer, is the electron density of the connecting layer between the F1 layer and the F2 layer at any height, is the peak electron density of the F2 layer, which has no actual physical meaning, is the geocentric height of the peak electron density of the F2 layer, is the electron density of the F2 layer at any height, is the electron concentration at the height in the top ionosphere, is the maximum electron concentration among them, is the height at, is the height of the ionosphere relative to the ground, is the scale height of the atmosphere, is the hyperbolic secant function.

4. The method according to claim 1, characterized in that, The expression of the critical frequency of the ionospheric F2 layer is: ， wherein, is the critical frequency of the ionospheric F2 layer, with the unit of MHz, is the measured , with the unit of TECU, is an empirical value related to the month, with the unit of km.

5. The method according to claim 1, wherein The expression of the electron density profile model is: ， Among them, is the bottom height of the E layer, is the height of the peak electron concentration of the F2 layer, is the height of the ionosphere top, is in the bottom ionosphere is the electron concentration at the height of, is in the top ionosphere is the electron concentration at the height of, is the height of the ionosphere relative to the ground.

6. A method for obtaining an electron density profile and ionospheric parameters, characterized in that, Adopt the method for obtaining the electron density profile and ionospheric parameters as described in any one of claims 1 - 5, applied to the model application phase, wherein the method comprises the following steps: Obtain the actual vertical TEC data in the ionosphere; Based on the actual vertical TEC data and the pre-constructed electron density profile model, the predicted vertical TEC data in the ionosphere is obtained, where the pre-constructed electron density profile model is obtained from electron densities at different heights; Calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; Based on the initial vertical difference, update the peak height of the ionospheric F2 layer in the first ionospheric parameter and the critical frequency of the ionospheric F2 layer in the second ionospheric parameter with a preset update condition until a vertical difference that meets the preset difference condition is obtained, and use the vertical difference to determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere.

7. The method according to claim 6, wherein The expression of the vertical difference is: ， Among them, is the actual vertical TEC data, is the predicted vertical TEC data, is the absolute value.

8. An apparatus for obtaining electron density profiles and ionospheric parameters, characterized in that, Applied to the model construction stage, where the device includes: The first acquisition module is configured to input the detection time information and detection location information of the target vertical TEC data into a preset IRI model to acquire the first ionospheric parameter required for constructing the electron density profile model in the ionosphere; The first generation module is configured to calculate the initial critical frequency of the ionospheric F2 layer by using the target vertical TEC data to obtain the second ionospheric parameter required for constructing the electron density profile model; The second generation module is configured to input the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain the electron densities at different heights in the ionosphere; The construction module is configured to construct the electron density profile model based on the electron densities at different heights.

9. An apparatus for obtaining an electron density profile and ionospheric parameters, characterized in that, Applied to the model application stage, where the device includes: The second acquisition module is configured to acquire the actual vertical TEC data in the ionosphere; The third generation module is configured to obtain the predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and the pre-constructed electron density profile model, where the pre-constructed electron density profile model is obtained from electron densities at different heights; The calculation module is configured to calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; The determination module is configured to update the peak height of the ionospheric F2 layer in the first ionospheric parameter and the critical frequency of the ionospheric F2 layer in the second ionospheric parameter with a preset update condition based on the initial vertical difference until a vertical difference that meets the preset difference condition is obtained, and use the vertical difference to determine the final electron density, the final first ionospheric parameter, and the final second ionospheric parameter in the ionosphere.

10. An electronic device, characterized in that, Includes: A memory, a processor, and a computer program stored on the memory and executable on the processor, where the processor executes the program to implement the method for obtaining the electron density profile and ionospheric parameters as described in any one of claims 1-5 or the method for obtaining the electron density profile and ionospheric parameters as described in any one of claims 6-7.

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