Multilayer capacitor

Abstract

The present disclosure provides a multilayer capacitor. The multilayer capacitor may include: a capacitor body including a dielectric layer and an inner electrode; and an outer electrode disposed on an outer side of the capacitor body, in which the inner electrode includes zirconium (Zr), an average content of zirconium (Zr) in the inner electrode is greater than or equal to about 0.0005 mol% and less than about 5.0 mol% based on a total component content of the inner electrode, the dielectric layer includes a plurality of dielectric crystal grains, at least one of the plurality of dielectric crystal grains has a core-shell structure, and the core-shell structure has a core-shell structure. The core-shell structure includes a core and a shell surrounding at least a portion of the core, and at least one of the core and the shell includes zirconium (Zr).

Description

Technical Field

[0001] The present disclosure relates to a multilayer capacitor. Background Art

[0002] Recently, with the rapid development of the multifunctionalization and miniaturization of electronic devices, the miniaturization and performance improvement of electronic components have also rapidly advanced. In addition, the demand for high reliability of electronic components used in electrical / electronic products and industrial products (such as automobiles, network devices, etc.) has also significantly increased.

[0003] To meet these market demands, the competition in the technological development of passive components such as inductors, capacitors, or resistors has been accelerating. In particular, as the applications and uses of multilayer ceramic capacitors (MLCCs), which are passive components, have been continuously increasing, a great deal of effort is required to capture the market by developing various multilayer ceramic capacitor (MLCC) products.

[0004] In addition, multilayer capacitors are manufactured by stacking dielectric layers and internal electrodes, and multilayer capacitors are used in various electronic devices such as mobile phones, laptop computers, and liquid crystal display televisions (LCD TVs).

[0005] With recent technological advancements, multilayer capacitors are required to be miniaturized and have a high capacitance. To this end, techniques have been developed to increase the effective electrode area by increasing the connectivity of the internal electrodes in contact with the dielectric layer or to micronize the dielectric material and the internal electrode material.

[0006] However, if the material is micronized, the melting point of the material decreases, which may lower the thermal shrinkage temperature of the material. In particular, since the metal material included in the internal electrode has a higher rate of decrease in thermal shrinkage temperature than the ceramic material included in the dielectric layer, the dielectric layer and the internal electrode may have a relatively large difference in thermal shrinkage temperature.

[0007] The greater the difference in thermal shrinkage temperature between the dielectric layer and the internal electrode, the more likely the electrode connectivity is to deteriorate after sintering the dielectric layer and the internal electrode, resulting in deterioration of the capacitance and reliability of the multilayer capacitor.

[0008] Currently, in order to reduce the difference in thermal shrinkage temperature between the dielectric layer and the internal electrode, a method of adding a nano-sized barium titanate (BaTiO3) common material when manufacturing the internal electrode is being adopted.

[0009] However, if the content of the barium titanate common material in the internal electrode increases, since the density of the internal electrode decreases, the common material may diffuse into the dielectric layer and the common material diffused into the dielectric layer may increase the thickness of the dielectric layer, thereby causing a side effect of reducing the capacitance of the multilayer capacitor. Therefore, it is necessary to develop a new common material that does not cause side effects even when diffused into the dielectric layer and has high thermal stability. SUMMARY OF THE INVENTION

[0010] One aspect of the embodiments provides a multilayer capacitor having improved electrode connectivity and excellent reliability.

[0011] However, the problems to be solved by the embodiments are not limited to the above problems and can be extended in various ways within the scope of the technical idea included in the embodiments.

[0012] The multilayer capacitor according to the embodiments includes: a capacitor body including a dielectric layer and internal electrodes; and external electrodes provided outside the capacitor body, wherein the internal electrodes include zirconium (Zr), and based on the total component content of the internal electrodes, the average content of zirconium (Zr) in the internal electrodes is greater than or equal to about 0.0005 mol% and less than about 5.0 mol%, the dielectric layer includes a plurality of dielectric grains, at least one of the plurality of dielectric grains has a core-shell structure, the core-shell structure includes a core and a shell surrounding at least a part of the core, and at least one of the core and the shell includes zirconium (Zr).

[0013] The internal electrodes may further include other conductive metals in addition to zirconium (Zr).

[0014] The dielectric grains include a main component and a sub-component.

[0015] The main component may include Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10) and (Ba 1- x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20) at least one kind.

[0016] The secondary component may include at least one of zirconium (Zr), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), hafnium (Hf), germanium (Ge), gallium (Ga), indium (In), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

[0017] Based on the total component content of the inner electrode, the average content of zirconium (Zr) in the inner electrode may be in the range from about 0.001 mol% to about 1.0 mol%.

[0018] The average content of zirconium (Zr) included in the shell based on the total component content of the shell may be greater than the average content of zirconium (Zr) included in the core based on the total component content of the core.

[0019] The average content of zirconium (Zr) included in the shell based on the total component content of the shell may be in the range from about 0.001 mol% to about 10.0 mol%.

[0020] The average content of zirconium (Zr) included in the core based on the total component content of the core may be in the range from about 0 mol% to about 2.0 mol%.

[0021] The average thickness of at least one of the dielectric layers may be in the range from about 0.1 μm to about 5.0 μm.

[0022] The average thickness of at least one of the inner electrodes may be in the range from about 0.1 μm to about 2.0 μm.

[0023] A multilayer capacitor according to another embodiment includes: a capacitor body including a dielectric layer and an inner electrode; and an outer electrode provided outside the capacitor body, wherein the inner electrode includes zirconium (Zr) and other conductive metals other than zirconium (Zr), the dielectric layer includes a plurality of dielectric grains, at least one of the plurality of dielectric grains has a core-shell structure, the core-shell structure includes a core and a shell surrounding at least a part of the core, and at least one of the core and the shell includes zirconium (Zr), the average content of Zr in the core based on the total component content of the core is less than about 1.0 mol%, and the average content of Zr in the shell based on the total component content of the shell is in the range from about 0.001 mol% to about 10.0 mol%.

[0024] A multilayer capacitor according to another embodiment includes: an inner electrode including zirconium (Zr) and other conductive metals other than zirconium (Zr), wherein, based on the total component content of the inner electrode, the average content of Zr in the inner electrode is greater than or equal to about 0.0005 mol% and less than about 5.0 mol%; and a dielectric layer including at least one dielectric grain having a core-shell structure, wherein the core of the core-shell structure has an average content of Zr of less than 1.0 mol% based on the total component content of the core, and the shell of the core-shell structure has an average content of Zr in the range from about 0.001 mol% to about 10.0 mol% based on the total component content of the shell.

[0025] The multilayer capacitor according to the embodiment has the advantages of improved electrode connectivity and excellent reliability.

[0026] However, the various beneficial advantages and effects of the present disclosure are not limited to the above description and can be more easily understood during the process of explaining the specific embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a perspective view showing a multilayer capacitor according to an embodiment.

[0028] Figure 2 is along Figure 1 A cross-sectional view of the multilayer capacitor taken along line I-I'.

[0029] Figure 3 is showing Figure 1 An exploded perspective view of the stacked structure of the capacitor body.

[0030] Figure 4 is a scanning electron microscope (SEM) image of a part of a cross-section of a multilayer capacitor according to an embodiment.

[0031] Figure 5 is showing Figure 4 An image mapping the Zr component of a part of the SEM image.

[0032] Figure 6 is a transmission electron microscope (TEM) image of a part of a cross-section of a multilayer capacitor according to an embodiment.

[0033] Figure 7 is showing Figure 6 An image mapping the Zr component of a part of the TEM image. DETAILED DESCRIPTION

[0034] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. The drawings and the description are considered to be illustrative rather than restrictive in nature. Throughout the specification, the same reference numerals denote the same elements. In addition, the drawings are provided to help easily understand the exemplary embodiments disclosed in this specification, and the technical spirit disclosed in this specification is not limited by the drawings, and it will be understood that the present disclosure includes all variations, equivalents, and substitution matters included within the spirit and technical scope of the present disclosure.

[0035] Terms including ordinal numbers (such as "first" and "second") are used to describe various components, but the components are not limited by the terms. The terms are only used to distinguish one component from another component.

[0036] When a component is referred to as "connected" or "coupled" to another component, it will be understood that the component can be directly connected or coupled to the other component, or there may be other intermediate components. In contrast, when a component is referred to as "directly connected" or "directly coupled" to another component, it will be understood that there are no other intermediate components.

[0037] In this specification, it will be understood that the terms "comprising" and "having" are intended to indicate the presence of the features, numbers, steps, operations, components, assemblies, or combinations thereof described in the specification, and do not exclude the possibility of the pre-existence or addition of one or more other features, numbers, steps, operations, components, assemblies, or combinations thereof. Therefore, unless explicitly described to the contrary, the words "comprising" and variations such as "including" or "having" will be understood to imply the inclusion of the stated elements but not the exclusion of any other elements.

[0038] Figure 1 is a perspective view showing a multilayer capacitor 100 according to an embodiment, Figure 2 is along Figure 1 a cross-sectional view of the multilayer capacitor 100 taken along line I-I', and Figure 3 is a perspective exploded view showing Figure 1 the stacked structure of the capacitor body 110 of

[0039] For clearly describing this embodiment, the directions are defined as follows: the L-axis direction, the W-axis direction, and the T-axis direction shown in the drawings respectively represent the length direction, the width direction, and the thickness direction of the capacitor body 110. Here, the thickness direction (T-axis direction) may be a direction perpendicular to the wide surface (main surface) of the sheet-like component, and may be used as, for example, the same concept as the stacking direction in which the dielectric layers 111 are stacked. The length direction (L-axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-like component, and may be a direction substantially perpendicular to the thickness direction (T-axis direction), and may be, for example, the direction along which the first external electrode 131 and the second external electrode 132 face each other. The width direction (W-axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-like component, and may be a direction substantially perpendicular to the thickness direction (T-axis direction) and the length direction (L-axis direction), and the length of the sheet-like component in the length direction (L-axis direction) may be longer than the length of the sheet-like component in the width direction (W-axis direction).

[0040] Referring to Figures 1 to 3 , the multilayer capacitor 100 according to the embodiment may include a capacitor body 110 and a first external electrode 131 and a second external electrode 132 provided at opposite ends of the capacitor body 110 in the length direction (L-axis direction).

[0041] The capacitor body 110 may have, for example, a substantially hexahedral shape.

[0042] In the present disclosure, for ease of explanation, in the capacitor body 110, two surfaces facing each other in the thickness direction (T-axis direction) are defined as the first surface and the second surface, two surfaces connected to the first surface and the second surface and facing each other in the length direction (L-axis direction) are defined as the third surface and the fourth surface, and two surfaces connected to the first surface and the second surface, connected to the third surface and the fourth surface and facing each other in the width direction (W-axis direction) are defined as the fifth surface and the sixth surface.

[0043] As an example, the first surface as the lower surface may be the mounting surface. In addition, the first surface to the sixth surface may be flat. However, this exemplary embodiment is not limited thereto. For example, the first surface to the sixth surface may be curved surfaces having a convex central portion, and the boundaries (i.e., edges) of the respective surfaces may be rounded.

[0044] The shape and size of the capacitor body 110 and the number of stacked dielectric layers 111 are not limited to the shape and size of the capacitor body 110 and the number of stacked dielectric layers 111 shown in the drawings of this embodiment.

[0045] The capacitor body 110 is formed by stacking a plurality of dielectric layers 111 in the thickness direction (T-axis direction) and sintering the plurality of dielectric layers 111, and the capacitor body 110 includes a plurality of dielectric layers 111 and first internal electrodes 121 and second internal electrodes 122 that are alternately arranged in the thickness direction (T-axis direction) with the dielectric layers 111 interposed therebetween.

[0046] In this case, adjacent dielectric layers 111 in the capacitor body 110 may be integrated such that it is difficult to identify the boundary between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0047] In addition, the capacitor body 110 may include an effective region and covering regions 112 and 113.

[0048] The effective region is a part that contributes to the formation of the capacitance of the multilayer capacitor 100. As an example, the effective region may be a region where the first internal electrodes 121 and the second internal electrodes 122 stacked in the thickness direction (T-axis direction) overlap each other.

[0049] The covering regions 112 and 113 are edge portions in the thickness direction and may be located on the upper surface and the lower surface of the effective region in the thickness direction (T-axis direction), respectively. The covering regions 112 and 113 may be stacked on the upper surface and the lower surface of the effective region, respectively, and each covering region may be composed of a single dielectric layer or two or more dielectric layers.

[0050] In addition, the capacitor body 110 may further include side covering regions. The side covering regions are edge portions in the width direction and may be located on two opposite side surfaces (the two side surfaces are close to the fifth surface and the sixth surface of the capacitor body 110, respectively) of the effective region in the width direction (W-axis direction). The side covering regions may be formed by the following method: stacking dielectric green sheets having conductive paste layers for forming internal electrodes and sintering them. When forming a conductive paste layer on the surface of the dielectric green sheet, the conductive paste may be coated only on a part of the surface of the dielectric green sheet and not on the region of the surface of the dielectric green sheet where the side covering regions are to be formed.

[0051] The covering regions 112 and 113 and the side covering regions are used to prevent damage to the first internal electrodes 121 and the second internal electrodes 122 caused by physical stress or chemical stress.

[0052] Inner electrode The first internal electrode 121 and the second internal electrode 122 are electrodes with different polarities, and can be alternately arranged opposite to each other along the T-axis direction. The dielectric layer 111 is interposed between the first internal electrode 121 and the second internal electrode 122, and one end of the first internal electrode 121 and one end of the second internal electrode 122 can be exposed through the third surface and the fourth surface of the capacitor body 110, respectively.

[0053] The first internal electrode 121 and the second internal electrode 122 can be electrically insulated from each other through the dielectric layer 111 provided between the first internal electrode 121 and the second internal electrode 122.

[0054] The end portions of the first internal electrode 121 and the second internal electrode 122 alternately exposed from the third surface and the fourth surface of the capacitor body 110 can be electrically connected to the first external electrode 131 and the second external electrode 132, respectively.

[0055] The internal electrodes 121 and 122 can include zirconium (Zr). For example, they can include zirconium (Zr) and other conductive metals, or can include an alloy of zirconium (Zr) and other conductive metals.

[0056] Zirconium (Zr) can be added to the conductive paste for the internal electrode in the form of zirconia (ZrO2), and after the sintering process, the internal electrodes 121 and 122 can include zirconia (ZrO2), Zr, or a combination thereof.

[0057] Since zirconia (ZrO2) has a higher melting point of about 1100 °C compared to the common materials of existing barium titanate (BaTiO3), if zirconia is included in the conductive paste for the internal electrode and sintered, the thermal shrinkage delay effect of the internal electrode is significantly better than that in the case of using barium titanate. Therefore, the thermal stability of the internal electrode is improved, and the electrode connectivity of the internal electrode is significantly improved. If the electrode connectivity is improved, the capacitance and BDV (breakdown voltage) of the multilayer capacitor can be increased.

[0058] For example, the conductive metal can also include metals such as Ni, Cu, Ag, Pd, or Au, or their alloys, such as an Ag-Pd alloy. For example, if the conductive metal is Ni, the first internal electrode 121 and the second internal electrode 122 can include Ni and Zr, such as a Ni-Zr alloy.

[0059] In addition, the first internal electrode 121 and the second internal electrode 122 can include dielectric particles having the same composition as the ceramic material included in the dielectric layer 111.

[0060] The first internal electrode 121 and the second internal electrode 122 can be formed using a conductive paste including a conductive metal. The printing method of the conductive paste can include a screen printing method, a gravure printing method, etc.

[0061] In one embodiment, based on the total component content of the internal electrodes 121 and 122, the average content of zirconium (Zr) in the internal electrodes 121 and 122 is greater than or equal to about 0.0005 mol% and less than about 5.0 mol%.

[0062] For example, based on the total component content of the internal electrodes 121 and 122, the average content of zirconium (Zr) in the internal electrodes 121 and 122 may be greater than or equal to about 0.0005 mol% or greater than or equal to about 0.001 mol% and less than about 5.0 mol%, less than or equal to about 2.5 mol% or less than or equal to about 1.0 mol%.

[0063] For example, based on the total component content of the internal electrodes 121 and 122, the average content of zirconium (Zr) in the internal electrodes 121 and 122 may be from about 0.0005 mol% to about 2.5 mol%, for example, from about 0.001 mol% to about 2.5 mol%, or from about 0.001 mol% to about 1.0 mol%.

[0064] When the average content of zirconium (Zr) in the internal electrodes 121 and 122 based on the total component content of the internal electrodes 121 and 122 is less than about 0.0005 mol%, not only may the electrode connectivity not be significantly improved, but also the electrical characteristics and reliability of the multilayer capacitor may be deteriorated.

[0065] Figure 4 is a scanning electron microscope (SEM) image of a part of the cross-section of a multilayer capacitor according to an embodiment, and Figure 5 is to show Figure 4 is an image mapping the Zr component of a part of the SEM image.

[0066] Referring to Figure 4 and Figure 5 , the average content (mol%) of zirconium (Zr) in the internal electrodes 121 and 122 can be measured by the following method.

[0067] First, the multilayer capacitor 100 is placed in an epoxy resin mixture and cured, and the sides in the W-axis direction and the T-axis direction of the capacitor body 110 are polished to the 1 / 2 point in the L-axis direction, and then placed in a vacuum atmosphere chamber to prepare a cross-section sample cut along the W-axis direction and the T-axis direction from the center in the L-axis direction of the capacitor body 110 (hereinafter referred to as "cross-section sample").

[0068] Subsequently, the cross-section sample is observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM) to obtain an SEM image or a TEM image.

[0069] For example, for Figure 4Zr composition mapping was performed on the SEM images shown in Figure 5 as shown in

[0070] to examine the Zr distribution in the cross-sectional sample. In addition, the content of Zr can be obtained by quantitative analysis using SEM-EDAX or TEM-EDAX.

[0071] As an example, the average thickness of the first inner electrode 121 and the second inner electrode 122 can be greater than or equal to about 0.1 μm, greater than or equal to about 0.2 μm, or greater than or equal to about 0.5 μm and less than or equal to about 2.0 μm, less than or equal to about 1.5 μm, or less than or equal to about 1.0 μm. For example, the average thickness of at least one of the first inner electrode 121 and the second inner electrode 122 can be in the range of 0.1 μm to 2.0 μm.

[0072] The average thickness of the first inner electrode 121 or the second inner electrode 122 can be measured by the following method.

[0073] The average thickness of the first inner electrode 121 and the second inner electrode 122 can be: in the scanning electron microscope (SEM) image of the cross-sectional sample, when the center point of the first inner electrode 121 or the second inner electrode 122 in the width direction (W-axis direction) is used as the reference point, the arithmetic average of the thicknesses of the first inner electrode 121 or the second inner electrode 122 at 10 points spaced a predetermined interval from the reference point.

[0074] The interval between two adjacent points among the 10 points can be adjusted according to the scale of the SEM image. For example, the interval between two adjacent points among the 10 points can be about 1 μm to about 100 μm, about 1 μm to about 50 μm, or about 1 μm to about 10 μm.

[0075] In this case, all 10 points should be located within the first inner electrode 121 or the second inner electrode 122, and if all 10 points are not located within the first inner electrode 121 or the second inner electrode 122, the position of the reference point can be changed or the interval between two adjacent points among the 10 points can be adjusted.

[0076] Dielectric layer Zirconia (ZrO₂) added to the conductive paste for the inner electrode can be partially diffused into the dielectric layer 111 in the form of Zr through a sintering process, and the diffused Zr can be mainly located in the shell of the dielectric grains having a core-shell structure. Therefore, the insulation of the dielectric layer is improved, and the reliability of the multilayer capacitor can be significantly improved.

[0077] The dielectric layer 111 includes a plurality of dielectric grains.

[0078] The dielectric grains include a main component and a sub-component.

[0079] The main component is a dielectric matrix material with a high dielectric constant and contributes to the formation of the dielectric constant of the multilayer capacitor 100.

[0080] The main component may include a dielectric material including Ba m TiO₃ (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O₃ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O₃ (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10) and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O₃ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20) at least one of.

[0081] For example, the main component may include (Ba 1-x Ca x ) m (Ti 1-y Zr y )O₃ (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20) and Ba m (Ti 1-x Zr x )O₃ (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10) at least one of.

[0082] For example, the main component may include at least one of BaTiO3, Ba(Ti, Zr)O3, Ba(Ti, Sn)O3, (Ba, Ca)TiO3, (Ba,Ca)(Ti, Zr)O3, (Ba, Ca)(Ti, Sn)O3, (Ba, Sr)TiO3, (Ba, Sr)(Ti, Zr)O3, and (Ba, Sr)(Ti,Sn)O3.

[0083] The sub-component may include at least one of zirconium (Zr), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), hafnium (Hf), germanium (Ge), gallium (Ga), indium (In), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

[0084] The dielectric layer 111 may further include at least one of a ceramic additive, an organic solvent, a binder, and a dispersant.

[0085] In an embodiment, at least one of the plurality of dielectric grains may have a core-shell structure.

[0086] The dielectric grain having a core-shell structure includes a core and a shell surrounding at least a part of the core.

[0087] The core and the shell have different molar ratios of the sub-component to the main component, wherein the molar ratio of the sub-component to the main component may change rapidly, for example, at the boundary between the core and the shell. Therefore, the boundary between the core and the shell can be easily distinguished, which can be confirmed by transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDX).

[0088] For example, the sub-component may not exist in the core, but if it exists, it exists in a very small amount. Therefore, the core may be composed only of the pure main component without impurities, and the pure main component usually may have a higher dielectric constant than the main component doped with elements as impurities. Therefore, the core can be used to maintain the dielectric constant.

[0089] Compared with the core, the shell may include more sub-components. In the shell, the sub-component doped at the B site of the main component (perovskite ABO3 structure) has the effect of increasing the band gap energy that enables other rare earth elements and doping elements to diffuse into the dielectric grains. Therefore, the sub-component doped at the B site of the main component can be used as a barrier to inhibit the diffusion of other rare earth elements and doping elements into the dielectric grains. Therefore, the growth of the dielectric grains can be inhibited, which helps to micronize the dielectric grains. In addition, in the shell, the sub-component doped at the A site of the main component can be used to improve reliability and dielectric constant.

[0090] For example, based on the total area of a dielectric grain, the core included in a dielectric grain may have an average area of about 50% to about 90%, for example, an average area of about 60% to about 90% or about 70% to about 90%.

[0091] For example, based on the total area of a dielectric grain, the shell included in a dielectric grain may have an average area of about 10% to about 50%, for example, an average area of about 10% to about 40% or about 10% to about 30%.

[0092] In an embodiment, at least one of the core and the shell includes zirconium (Zr).

[0093] In an embodiment, the average content of zirconium (Zr) based on the total composition content of the shell included in the shell may be greater than the average content of zirconium (Zr) based on the total composition content of the core included in the core.

[0094] In an embodiment, the average content of zirconium (Zr) based on the total composition content of the shell included in the shell may be about 0.001 mol% to about 10.0 mol%, for example, about 0.01 mol% to about 10.0 mol%, about 0.1 mol% to about 10.0 mol% or about 0.1 mol% to about 5.0 mol%.

[0095] In an embodiment, the average content of zirconium (Zr) based on the total composition content of the core included in the core may be about 0 mol% to about 2.0 mol%, for example, about 0 mol% to about 1.0 mol% or 0 mol% to about 0.5 mol%.

[0096] When the average contents of zirconium (Zr) included in the core and the shell respectively satisfy the above numerical ranges, a multi-layer capacitor with high reliability can be achieved.

[0097] Figure 6 is a TEM (transmission electron microscope) image of a part of the cross-section of a multi-layer capacitor according to an embodiment, and Figure 7 is a Figure 6 image mapping the Zr composition of a part of the TEM image showing

[0098] Referring to Figure 6 and Figure 7 , the average contents of zirconium (Zr) included in the core and the shell can be measured by the following method.

[0099] In the TEM image of the cross-sectional sample, three or more dielectric grains located within approximately 200 nm from the interface between the inner electrode and the dielectric layer toward the center of the dielectric layer are selected. For each of the selected dielectric grains, Zr composition mapping is performed to distinguish the boundary between the core and the shell. In addition, three points are respectively selected from the core and shell regions, and the Zr content at each of the selected points is quantitatively analyzed by SEM-EDAX or TEM-EDAX, and the arithmetic mean is calculated as the average content of zirconium (Zr) included in the core and the shell.

[0100] For example, the average thickness of the dielectric layer 111 may be greater than or equal to about 0.1 μm or greater than or equal to about 0.5 μm and less than or equal to about 5.0 μm, less than or equal to about 2.5 μm or less than or equal to about 1.0 μm. For example, the average thickness of at least one of the dielectric layers 111 may be in the range from 0.1 μm to 5.0 μm.

[0101] The average thickness of the dielectric layer 111 can be measured by the following method.

[0102] First, a scanning electron microscope (SEM) image is obtained by observing a cross-sectional sample with a scanning electron microscope.

[0103] The average thickness of the dielectric layer 111 can be: in the SEM image of the cross-sectional sample, when the center point of the dielectric layer 111 in the width direction (W-axis direction) is used as a reference point, the arithmetic mean of the thicknesses of the dielectric layer 111 at 10 points spaced a predetermined interval from the reference point.

[0104] The interval between two adjacent points among the 10 points can be adjusted according to the scale of the SEM image. For example, the interval between two adjacent points among the 10 points can be about 1 μm to about 100 μm, about 1 μm to about 50 μm, or about 1 μm to about 10 μm.

[0105] In this case, all 10 points should be located within the dielectric layer 111, and if all 10 points are not located within the dielectric layer 111, the position of the reference point can be changed or the interval between two adjacent points among the 10 points can be adjusted.

[0106] Outer electrode The first outer electrode 131 and the second outer electrode 132 are provided with voltages of different polarities and are respectively electrically connected to the respective exposed portions of the first inner electrode 121 and the second inner electrode 122.

[0107] According to the above configuration, when a predetermined voltage is applied to the first external electrode 131 and the second external electrode 132, charges are accumulated between the first internal electrode 121 and the second internal electrode 122 facing each other. Here, the multilayer capacitor 100 may have a capacitance proportional to an overlapping area in which the first internal electrode 121 and the second internal electrode 122 overlap each other in the T-axis direction in the active region.

[0108] The first outer electrode 131 may be disposed on the third surface of the capacitor body 110 and may include a first connection portion connected to the first inner electrode 121 and include a first band portion disposed at an edge where the third surface of the capacitor body 110 intersects with the first surface, the second surface, the fifth surface, and the sixth surface. The second outer electrode 132 may be disposed on the fourth surface of the capacitor body 110 and may include a second connection portion connected to the second inner electrode 122 and include a second band portion disposed at an edge where the fourth surface of the capacitor body 110 intersects with the first surface, the second surface, the fifth surface, and the sixth surface.

[0109] The first band portion may extend from the first connection portion to a portion of the first surface and a portion of the second surface of the capacitor body 110, and may further extend from the first connection portion to a portion of the fifth surface and a portion of the sixth surface of the capacitor body 110, and the second band portion may extend from the second connection portion to a portion of the first surface and a portion of the second surface of the capacitor body 110, and may further extend from the second connection portion to a portion of the fifth surface and a portion of the sixth surface of the capacitor body 110. The first band portion and the second band portion may be used to improve the bonding strength of the first external electrode 131 and the second external electrode 132 to the capacitor body 110.

[0110] As an example, each of the first and second external electrodes 131 and 132 may include a sintered metal layer contacting the capacitor body 110 , a conductive resin layer disposed to cover the sintered metal layer, and a plated layer disposed to cover the conductive resin layer.

[0111] The sintered metal layer may include indium (In) and other conductive metals.

[0112] The sintered metal layer may include a conductive metal such as at least one of copper (Cu), nickel (Ni), silver (Ag), palladium (Pd), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), lead (Pb), and alloys thereof. For example, the conductive metal including copper (Cu) may mean that the conductive metal includes a copper (Cu) single substance or a copper (Cu) alloy. For example, when the conductive metal is Cu, the sintered metal layer includes Cu and In, for example, may include a Cu-In alloy. If the conductive metal includes copper, other metals other than copper may be included in an amount less than or equal to about 5 mol parts based on 100 mol parts of copper.

[0113] As an example, the sintered metal layer may further include glass. In this case, the sintered metal layer may include a composition of mixed oxides such as glass, and the sintered metal layer may include, for example, one or more selected from silicon oxide, boron oxide, aluminum oxide, transition metal oxides, alkali metal oxides, and alkaline earth metal oxides. The transition metal may be selected from one or more of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), and the alkali metal may be selected from one or more of lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be selected from one or more of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0114] Optionally, a conductive resin layer is formed on the sintered metal layer. For example, it may be formed to completely cover the sintered metal layer. In addition, the first outer electrode 131 and the second outer electrode 132 may not include the sintered metal layer. In this case, the conductive resin layer may be in direct contact with the capacitor body 110.

[0115] The conductive resin layer may extend to the first surface and the second surface of the capacitor body 110, and may also extend to the fifth surface and the sixth surface of the capacitor body 110. And the length of the region (i.e., the belt portion) where the conductive resin layer extends to the first surface and the second surface and / or the fifth surface and the sixth surface of the capacitor body 110 may be longer than the length of the region (i.e., the belt portion) where the sintered metal layer extends to the first surface and the second surface and / or the fifth surface and the sixth surface of the capacitor body 110. In other words, the conductive resin layer may be formed on the sintered metal layer and may be formed to completely cover the sintered metal layer.

[0116] The conductive resin layer includes a resin and a conductive metal.

[0117] The resin included in the conductive resin layer is not particularly limited as long as it has adhesiveness and shock absorbency and can be mixed with the conductive metal powder to form a paste. And the resin may include, for example, phenolic resin, acrylic resin, silicone resin, epoxy resin, or polyimide resin.

[0118] The conductive metal included in the conductive resin layer is used to electrically connect the first inner electrode 121 and the second inner electrode 122 or the sintered metal layer to the plating layer described below.

[0119] The conductive metal included in the conductive resin layer may have at least one of a spherical shape and a flake shape. In other words, the conductive metal may be formed only in a flake shape, or may be formed only in a spherical shape, or may be formed in a form of a mixture of a flake shape and a spherical shape.

[0120] Here, the spherical shape may include shapes that are not perfectly spherical, and may include, for example, shapes in which the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) may be less than or equal to about 1.45. The flake shape refers to a flat and elongated shape, and is not particularly limited, but for example, the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) may be greater than or equal to about 1.95.

[0121] The first outer electrode 131 and the second outer electrode 132 may also include a plating layer provided outside the conductive resin layer.

[0122] The plating layer may include at least one of nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), and their alloys. As an example, each plating layer may be a nickel (Ni) plating layer or a tin (Sn) plating layer, or may be in a form in which a nickel (Ni) plating layer and a tin (Sn) plating layer are stacked in sequence, or may be in a form in which a tin (Sn) plating layer, a nickel (Ni) plating layer, and a tin (Sn) plating layer are stacked in sequence. Optionally, each plating layer may include a plurality of nickel (Ni) plating layers and / or a plurality of tin (Sn) plating layers.

[0123] The plating layer may improve the mountability on a substrate, structural reliability, external durability, heat resistance, and equivalent series resistance (ESR) of the multilayer capacitor 100.

[0124] Method for manufacturing a multilayer capacitor A method of manufacturing a multilayer capacitor according to another embodiment includes: manufacturing a capacitor body including a dielectric layer and an inner electrode, and then forming an outer electrode on the outside of the capacitor body.

[0125] First, a method of manufacturing the capacitor body will be described.

[0126] In the manufacturing process of the capacitor body, a dielectric paste that will form a dielectric layer after sintering and a conductive paste that will form an inner electrode after sintering are prepared.

[0127] For example, the dielectric paste is prepared by the following method. The dielectric powder is uniformly mixed by wet mixing or the like, then dried, and heat-treated under predetermined conditions. Subsequently, an organic carrier or an aqueous carrier is added to the dielectric powder, and additionally, kneading is performed to prepare the dielectric paste.

[0128] The obtained dielectric paste is formed into a dielectric green sheet by using a technique such as a doctor blade method. In addition, if necessary, the dielectric paste may include additives selected from various dispersants, plasticizers, binders, sub-component compounds, or glass.

[0129] A conductive paste for an inner electrode is prepared by kneading conductive powder made of a conductive metal or their alloys with a binder or a solvent. As an example, a conductive paste for an inner electrode can be prepared by kneading zirconia. If necessary, the conductive paste for an inner electrode may include ceramic powder (e.g., barium titanate powder) as a common material (i.e., the same material as the material of the dielectric layer). The common material can be used to inhibit the sintering of the conductive powder during the sintering process.

[0130] The conductive paste for an inner electrode is coated on the surface of a green dielectric sheet in a predetermined pattern by various printing methods such as screen printing or transfer printing. Subsequently, a plurality of green dielectric sheets having inner electrode patterns are stacked, and then pressed in the stacking direction to obtain a green dielectric sheet laminate. Here, green dielectric sheets on which no inner electrode pattern is formed can be provided at the top and bottom of the green dielectric sheet laminate in the stacking direction.

[0131] Optionally, the obtained green dielectric sheet laminate can be cut into a predetermined size by cutting or the like.

[0132] In addition, if necessary, the green dielectric sheet laminate can be cured and dried to remove a plasticizer or the like, and then polished by using a horizontal centrifugal drum machine or the like. In drum polishing, unnecessary parts such as burrs generated during cutting can be polished by placing the green dielectric sheet laminate together with a medium and a polishing liquid in a drum container and then applying a rotational motion, vibration, etc. to the drum container. In addition, after drum polishing, the green dielectric sheet laminate can be washed with a cleaning solution (such as water) and dried.

[0133] The green dielectric sheet laminate is subjected to a binder removal treatment and a sintering treatment to obtain a capacitor body.

[0134] The binder removal treatment is carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the inner electrode. For example, the binder removal treatment is carried out by raising the temperature at about 5 °C / hour to about 300 °C / hour and maintaining at a holding temperature of about 180 °C to about 400 °C for about 0.5 hour to about 24 hours. The binder removal treatment is carried out in an air atmosphere or a reducing atmosphere.

[0135] The sintering treatment can be carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the inner electrode. For example, the sintering treatment can be carried out at about 1200 °C to about 1350 °C or about 1220 °C to about 1300 °C for about 0.5 hour to about 8 hours or about 1 hour to about 3 hours. The sintering treatment is carried out in a reducing atmosphere (e.g., in an atmosphere in which a mixed gas of nitrogen (N2) and hydrogen (H2) is humidified). When the inner electrode includes nickel (Ni) or a nickel (Ni) alloy, the oxygen partial pressure in the sintering atmosphere can be about 1.0×10 -14 MPa to about 1.0×10-10 MPa.

[0136] After the sintering treatment, annealing can be carried out. Since annealing is a treatment for re-oxidizing the dielectric layer, if sintering is carried out in a reducing atmosphere, annealing can be carried out. The annealing treatment is carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the like. For example, the temperature can be raised at about 50 °C / hour to about 500 °C / hour, and annealing treatment can be carried out at about 950 °C to about 1150 °C for about 0 hours to about 20 hours. In addition, annealing can be carried out in a wet nitrogen (N2) atmosphere with an oxygen partial pressure of about 1.0×10 -9 MPa to about 1.0×10 -5 MPa.

[0137] For example, wet nitrogen, mixed gas, etc. can be used in the binder removal treatment, sintering treatment or annealing treatment by using a wetting agent or the like. The temperature of the wetting agent used can be about 5 °C to about 75 °C. The binder removal treatment, sintering treatment and annealing treatment can be carried out continuously or independently.

[0138] Optionally, surface treatments such as sandblasting, laser irradiation or barrel polishing can be carried out on the third surface and the fourth surface of the capacitor body. This surface treatment can expose the ends of the first internal electrode and the second internal electrode to the third surface and the fourth surface respectively, which can strengthen the electrical connection between the first external electrode and the first internal electrode and between the second external electrode and the second internal electrode, and alloy parts are easily formed.

[0139] Subsequently, a paste for forming a sintered metal layer is coated on the outside of the obtained capacitor body and sintered to form a sintered metal layer of the external electrode.

[0140] The paste for forming a sintered metal layer may include a conductive metal and glass. The conductive metal and glass are the same as those described above, so they will not be repeated. In addition, the paste for forming a sintered metal layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer or an oxide powder. For example, the binder can be ethyl cellulose, acrylamide or butyral, and the solvent can be an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone or toluene or an aqueous solvent.

[0141] The method of coating a paste for forming a sintered metal layer on the outside of the capacitor body may include an impregnation method, various printing methods such as screen printing, a coating method by using a dispenser or the like, or a spraying method by using an injector or the like. The paste for forming a sintered metal layer is coated on at least one of the third surface and the fourth surface of the capacitor body, and optionally, on each part of the belt portions of the first surface, the second surface, the fifth surface or the sixth surface where the first external electrode and the second external electrode will be formed.

[0142] Subsequently, the capacitor body coated with the paste for forming the sintered metal layer is dried, and then sintered at a temperature of about 700 °C to about 1000 °C for about 0.1 hour to about 3 hours to form the sintered metal layer.

[0143] Optionally, on the outer side of the obtained capacitor body, a paste for forming a conductive resin layer is coated and cured to form the conductive resin layer.

[0144] The paste for forming the conductive resin layer may include a resin and a conductive metal, and optionally may include a non-conductive filler. Since the description of the conductive metal and the resin is the same as above, the repeated description will be omitted. In addition, the paste for forming the conductive resin layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer, or an oxide powder. For example, the binder may be ethyl cellulose, acrylate, or butyral, and the solvent may be an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone, or toluene, or an aqueous solvent.

[0145] For example, the method of forming the conductive resin layer may include: dipping the capacitor body 110 in the paste for forming the conductive resin layer and curing it, or printing the paste for forming the conductive resin layer on the surface of the capacitor body 110 by screen printing, gravure printing, etc. and curing it, or coating the paste for forming the conductive resin layer on the surface of the capacitor body 110 and then curing it.

[0146] Subsequently, a plating layer is formed on the outer side of the conductive resin layer.

[0147] For example, the plating layer may be formed by a plating method, for example, may be formed by sputtering or electroplating.

[0148] Hereinafter, specific examples of the present disclosure will be presented. However, the following examples are only intended to specifically illustrate or describe the present disclosure and should not be construed as limiting the scope of the present disclosure.

[0149] (Example) Example 1 A dielectric green sheet is prepared by preparing a dielectric slurry including BaTiO3 and then coating the dielectric slurry on a coating head discharge type roll coater.

[0150] Subsequently, a conductive paste for the inner electrode is prepared by weighing and mixing Ni and Zr such that based on the total component content of the inner electrode, the content of Zr can be 0.001 mol%.

[0151] The conductive paste is printed on the surface of the dielectric green sheet, and a plurality of dielectric green sheets having a conductive paste layer are stacked and pressed to manufacture a dielectric green sheet laminate (length × width × height = 3.2 mm × 2.5 mm × 2.5 mm).

[0152] The binder removal treatment is carried out in a nitrogen atmosphere at 400 °C or lower, and then the dielectric green sheet laminate is sintered at a sintering temperature of 1300 °C or lower and a hydrogen (H2) concentration of 1.0% or lower to manufacture the multilayer capacitor according to Example 1.

[0153] Examples 2 to 3 and Comparative Examples 1 to 3 Except for adjusting the content of Zr in the inner electrode based on the total composition content of the inner electrode as shown in Table 1, the multilayer capacitors of Examples 2 to 3 and Comparative Examples 1 to 3 are manufactured in the same manner as Example 1.

[0154] (Evaluation Example) Evaluation 1: Evaluation of electrode connectivity The multilayer capacitors of Examples 1 to 3 and Comparative Examples 1 to 3 are evaluated for electrode connectivity.

[0155] First, four multilayer capacitors are prepared, placed in an epoxy resin mixture and cured, and then the sides in the W-axis direction and T-axis direction of the capacitor body 110 are polished to the 1 / 2 point in the L-axis direction, and then placed in a vacuum atmosphere chamber to prepare a cross-sectional sample cut along the W-axis direction and T-axis direction from the center in the L-axis direction of the capacitor body 110 (hereinafter referred to as "cross-sectional sample"). Subsequently, the cross-sectional sample is observed with a transmission electron microscope (TEM) (at a magnification of 200 times) to obtain a TEM image.

[0156] After selecting any inner electrode from the TEM image and drawing a dotted line along the W-axis direction on the selected inner electrode, the ratio of the unbroken length of the inner electrode to the total length of the inner electrode is calculated.

[0157] The length ratio of Comparative Example 1 is set as the reference value 1 to calculate the respective relative length ratios of the other examples and comparative examples, and the results are shown in Table 1.

[0158] Evaluation 2: Evaluation of electrical characteristics (BDV, capacitance), reliability (MTTF) The multilayer capacitors of Examples 1 to 3 and Comparative Examples 1 to 3 are evaluated for breakdown voltage (BDV), capacitance, and MTTF, and the results are shown in Table 1.

[0159] The BDV is measured as follows: For Examples 1 to 3 and Comparative Examples 1 to 3, 50 multilayer capacitors were each prepared. A Keithley meter model 2410 was used to apply a voltage to them from 0 V to 1100 V in 1.00000 V increments by the sweep method, and the voltage at which the current value reached 20 mA was measured as the breakdown voltage. The breakdown voltage was measured in a silicone oil bath. The BDV of Comparative Example 1 was used as the reference value 1 to calculate the respective relative breakdown voltage values of the other examples and comparative examples, as shown in Table 1.

[0160] The capacitance was measured by using an LCR meter under the conditions of 1 kHz and AC 0.5 V, and the capacitance of Comparative Example 1 was used as the reference value 1 to calculate the respective relative capacitance values of the other examples and comparative examples, as shown in Table 1.

[0161] The MTTF (Mean Time To Failure) was measured by performing a high-temperature load test on 400 samples of each example and comparative example under the conditions of 125 °C and 8 V. Here, the MTTF (Mean Time To Failure) refers to the time when the insulation resistance reaches 10 kΩ or less, and the MTTF of Comparative Example 1 was used as the reference value 1 to calculate the respective relative MTTF values of the other examples and comparative examples, as shown in Table 1.

[0162] (Table 1)

[0163] Referring to Table 1, in Examples 1 to 3, as the Zr content in the inner electrode increased from 0.001 mol% to 1 mol%, the electrode connectivity increased due to the increased inner electrode shrinkage delay effect, and thus the capacitance increased.

[0164] However, compared with Comparative Example 1, Comparative Example 2 in which excessive Zr diffused into the dielectric layer and caused side effects on the dielectric showed deteriorated electrode connectivity and capacitance.

[0165] In addition, Examples 1 to 3 showed improved BDV (Breakdown Voltage) and MTTF (Reliability) due to the improved interface reliability between the dielectric layer and the inner electrode.

[0166] However, compared with Comparative Example 1, Comparative Example 3 which excessively included Zr showed deteriorated electrode connectivity, capacitance, BDV, and MTTF.

[0167] Although the present disclosure has been described in connection with presently considered practical exemplary embodiments, it should be understood that the present disclosure is not limited to the disclosed exemplary embodiments. On the contrary, it is intended to cover various modifications and equivalent schemes included within the spirit and scope of the appended claims.

[0168] <Description of Symbols> 100: Multilayer capacitor 110: Capacitor body 111: Dielectric layer 112, 113: Covering area 121: First internal electrode 122: Second internal electrode 131: First external electrode 132: Second external electrode.

Claims

1. A multilayer capacitor, comprising: A capacitor body including a dielectric layer and internal electrodes; And External electrodes disposed outside the capacitor body, Wherein the internal electrodes include Zr, Based on the total component content of the internal electrodes, the average content of Zr in the internal electrodes is greater than or equal to 0.0005 mol% and less than 5.0 mol%, The dielectric layer includes a plurality of dielectric grains, At least one of the plurality of dielectric grains has a core - shell structure, the core - shell structure including a core and a shell surrounding at least a part of the core, and At least one of the core and the shell includes Zr.

2. The multilayer capacitor according to claim 1, wherein, The internal electrodes further include other conductive metals in addition to Zr.

3. The multilayer capacitor according to claim 1, wherein, The dielectric grains include a main component and a sub - component, and The main components include Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3 and (Ba 1-x Ca x ) m (Ti 1- y Sn y )O3, and at least one of them, where, in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.

20.

4. The multilayer capacitor according to claim 3, wherein, The sub - component includes at least one of Zr, Mn, Cr, Si, Al, Mg, Sn, Sb, Hf, Ge, Ga, In, La, Y, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

5. The multilayer capacitor according to claim 1, wherein, Based on the total component content of the internal electrodes, the average content of Zr in the internal electrodes is in the range from 0.001 mol% to 1.0 mol%.

6. The multilayer capacitor according to claim 1, wherein, The average content of Zr included in the shell based on the total component content of the shell is greater than the average content of Zr included in the core based on the total component content of the core.

7. The multilayer capacitor according to claim 1, wherein, The average content of Zr included in the shell based on the total component content of the shell is in the range from 0.001 mol% to 10.0 mol%.

8. The multilayer capacitor according to claim 1, wherein, The average content of Zr included in the core based on the total component content of the core is in the range from 0 mol% to 2.0 mol%.

9. The multilayer capacitor according to claim 1, wherein, The average thickness of at least one of the dielectric layers is in the range from 0.1 μm to 5.0 μm.

10. The multilayer capacitor according to claim 1, wherein, The average thickness of at least one of the internal electrodes is in the range from 0.1 μm to 2.0 μm.

11. A multilayer capacitor, comprising: A capacitor body including a dielectric layer and internal electrodes; And External electrodes disposed outside the capacitor body, Wherein the internal electrodes include Zr and other conductive metals in addition to Zr, The dielectric layer includes a plurality of dielectric grains, At least one of the plurality of dielectric grains has a core - shell structure, the core - shell structure including a core and a shell surrounding at least a part of the core, and At least one of the core and the shell includes Zr, The average content of Zr in the core based on the total component content of the core is less than 1.0 mol%, and The average content of Zr in the shell based on the total composition content of the shell is in the range from 0.001 mol% to 10.0 mol%.

12. The multilayer capacitor according to claim 11, wherein, the dielectric grains include a main component and a sub-component, and The main components include Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3, and (Ba 1-x Ca x ) m (Ti 1- y Sn y )O3, where, in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.

20.

13. The multilayer capacitor according to claim 12, wherein, the sub-component includes at least one of Zr, Mn, Cr, Si, Al, Mg, Sn, Sb, Hf, Ge, Ga, In, La, Y, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

14. The multilayer capacitor according to claim 11, wherein, based on the total composition content of the inner electrode, the average content of Zr in the inner electrode is greater than or equal to 0.0005 mol% and less than 5.0 mol%.

15. The multilayer capacitor according to claim 11, wherein, the average content of Zr in the shell based on the total composition content of the shell is greater than the average content of Zr in the core based on the total composition content of the core.

16. The multilayer capacitor according to claim 11, wherein, based on the total composition content of the inner electrode, the average content of Zr in the inner electrode is in the range from 0.001 mol% to 1.0 mol%.

17. The multilayer capacitor according to claim 11, wherein, the average thickness of at least one of the dielectric layers is in the range from 0.1 μm to 5.0 μm.

18. The multilayer capacitor according to claim 11, wherein, the average thickness of at least one of the inner electrodes is in the range from 0.1 μm to 2.0 μm.

19. A multilayer capacitor, comprising: an inner electrode including Zr and other conductive metals other than Zr, wherein, based on the total composition content of the inner electrode, the average content of Zr in the inner electrode is greater than or equal to 0.0005 mol% and less than 5.0 mol%; and a dielectric layer including at least one dielectric grain having a core-shell structure, wherein the core of the core-shell structure has an average content of Zr less than 1.0 mol% based on the total composition content of the core, and the shell of the core-shell structure has an average content of Zr in the range from 0.001 mol% to 10.0 mol% based on the total composition content of the shell.

Images