Special cable structure for fused salt tower type photo-thermal power generation

Abstract

The invention relates to a cable structure special for fused salt tower type photo-thermal power generation in the field of cables, in the application, a temperature adjusting layer is used for protecting the joint of a cable main body and a cable joint, when the environment change temperature of the cable main body and the cable joint is too high, a temperature sensor detects that the temperature of a phase change material reaches a preset interference temperature, and the cable main body and the cable joint are connected; the programmable direct-current power supply supplies power to the semiconductor refrigeration unit until the phase change material reaches the preset adjusting temperature, meanwhile, the light reflecting unit and the light sensing unit are additionally arranged, the phase change process of the phase change material is detected, and when the phase change process of the phase change material is completed, the semiconductor refrigeration unit can be shut down in time; the ineffective working time of the semiconductor refrigeration unit is reduced, the working life of the semiconductor refrigeration unit is effectively prolonged, meanwhile, the cable body is not prone to excessive thermal expansion and cold contraction under the condition that the temperature difference is large, and irreversible damage to the working state of the cable body is not prone to occurring.

Description

Technical Field

[0001] The present invention relates to a cable structure, and in particular to a special cable structure for molten salt tower solar thermal power generation applied in the field of cables. Background Art

[0002] A molten salt tower solar thermal power station is a new energy system that combines solar heat collection, molten salt heat storage, and traditional power generation technologies. Its core advantage lies in achieving stable power supply throughout the day through molten salt heat storage. The power station reflects sunlight to the absorber at the top of the heat absorption tower through a large number of heliostats, forming a high-temperature focus point with a temperature of over 560°C. When power generation is required, high-temperature molten salt exchanges heat with water to generate high-temperature and high-pressure steam, which drives a steam turbine to generate electricity. The used molten salt cools down and flows back to the low-temperature tank to form a circulation system.

[0003] The specification of invention patent CN118136313B discloses a pressure-resistant high-temperature cable for energy storage devices and its manufacturing method. A gap filling layer is provided between the conductor and the protective layer, and the gap filling layer is formed by filling a matrix with a plurality of conductive skin layers and phase change heat storage inner layers. Through the heat absorption and heat release of the phase change heat storage inner layer, the heating and cooling rates of the conductor can be slowed down, thereby reducing the impact of high-frequency thermal expansion and contraction on the material, and avoiding the generation of gaps between the conductor and the protective layer due to thermal expansion and contraction. The specification of invention patent CN109087730B discloses an abrasion-resistant and scratch-resistant cable. Through the setting of steel wire strips and the first insulating layer, it is beneficial to prevent the cable conductor from breaking due to thermal expansion and contraction when the weather alternates between hot and cold.

[0004] In the prior art, since the cable itself belongs to a multi-layer structure, the thermal expansion and contraction amplitudes of the multi-layer structure are different under the same temperature change conditions. When used in an environment with a large temperature difference in a short time, it is extremely easy to cause local excessive deformation and tearing due to different thermal expansion and contraction amplitudes of each layer, thereby affecting the normal use of the cable. Especially for the wiring part of the cable, one end is fixedly connected to the electrical appliance. When thermal expansion and contraction occur, it is extremely easy to loosen the connection, thereby causing the entire circuit to fail. Summary of the Invention

[0005] Aiming at the above-mentioned prior art, the technical problem to be solved by the present invention is that when the cable main body undergoes thermal expansion and contraction in an environment with a large temperature difference in a short time, it is extremely easy to loosen the connection between the cable and the electrical appliance, thereby causing the entire circuit to fail.

[0006] To solve the above problems, the present invention provides a cable structure dedicated for molten salt tower type solar thermal power generation, which includes a cable main body and a cable joint fixedly connected. A temperature adjustment layer and a wire box are sleeved on one side of the cable main body close to the cable joint. The wire box is located on the side of the temperature adjustment layer close to the cable joint. A phase change cavity is dug in the temperature adjustment layer, and a phase change material is filled in the phase change cavity. A plurality of temperature sensors are fixedly connected to the side wall of the phase change cavity. A plurality of semiconductor refrigeration units are buried in the temperature adjustment layer, and the semiconductor refrigeration units are electrically connected to the wire box. The wire box includes a wire box main body, and a pair of connectors are inserted on the wire box main body. The positive and negative poles of a plurality of power supply wires are respectively twisted to form two wire groups and are respectively electrically connected to the two connectors; A heat dissipation structure one is placed in the phase change cavity, and a heat dissipation structure two is sleeved on the outside of the temperature adjustment layer. Both the heat dissipation structure one and the heat dissipation structure two are made of high thermal conductivity materials, and both the heat dissipation structure one and the heat dissipation structure two are connected to the semiconductor refrigeration units and conduct heat. A reflective unit and a photosensitive unit with matching positions are fixedly connected to the inner wall of the phase change cavity.

[0007] In the above-mentioned cable structure dedicated for molten salt tower type solar thermal power generation, the thermal expansion and contraction amplitude in an environment with a large temperature difference in a short time is reduced, it is not easy to cause the cable joint to be pulled loose, and it is not easy to cause the entire circuit to fail.

[0008] As a further improvement of the present application, a plurality of semiconductor refrigeration units each include a semiconductor refrigeration chip. A pair of power supply wires are fixedly connected to one end of each of the plurality of semiconductor refrigeration chips close to the wire box, and the power supply wires are electrically connected to the wire box.

[0009] As a further improvement of the present application, the phase change material is PCM-20, and its phase change temperature is 20 °C. During the phase change process of the phase change material, it will be at about 20 degrees Celsius for a long time, providing a suitable working temperature for the cable main body to work.

[0010] As a further improvement of the present application, the heat dissipation structure one includes a fixing ring located in the phase change cavity. A first heat conduction column is fixedly connected between the fixing ring and each of the plurality of semiconductor refrigeration chips. A first heat dissipation fin is fixedly connected to the inner wall of the fixing ring, increasing the heat exchange effect between the semiconductor refrigeration chip and the phase change material.

[0011] As a supplement to the further improvement of the present application, a plurality of flow holes are dug in the first heat dissipation fin, and the flow holes on adjacent first heat dissipation fins are staggered, increasing the contact area between the heat dissipation structure one and the phase change material. At the same time, during the heating process of the phase change material by the heat dissipation structure one, the warm current of the phase change material will be restricted and guided by the plurality of first heat dissipation fins, increasing the flow distance, so that the phase change material is heated more evenly.

[0012] As another improvement of the present application, the second heat dissipation structure includes the second heat dissipation fins sleeved outside the temperature adjustment layer. There are second heat conduction columns fixedly connected between the second heat dissipation fins and multiple semiconductor refrigeration chips, which improves the heat exchange effect between the semiconductor refrigeration chips and the external environment.

[0013] As a supplement to another improvement of the present application, multiple protection columns are fixedly connected to the outer end of the second heat dissipation fins. The multiple protection columns cover half of the outer wall area of the second heat dissipation fins, which reduces the heat dissipation of the outer wall of the second heat dissipation fins while effectively protecting the second heat dissipation fins and reducing the risk of deformation of the second heat dissipation fins caused by external collision.

[0014] As another improvement of the present application, a bladeless fan is sleeved outside the cable main body. The bladeless fan is located on the side of the temperature adjustment layer away from the cable joint. The bladeless fan includes a working part, and a fan main body is fixedly connected to the lower end of the working part. The working part generates wind during operation, so that the air in the area where the bladeless fan is located flows from the temperature adjustment layer to the bladeless fan, which improves the heat exchange effect of the second heat dissipation structure, realizes the effect of driving air flow, accelerates the air flow in the area where the second heat dissipation structure is located, and increases the heat dissipation effect.

[0015] As another improvement of the present application, the part of the temperature adjustment layer away from the cable main body is made of heat-insulating elastic material, and the part of the temperature adjustment layer close to the cable main body is made of heat-conducting elastic material. Moreover, the material density of the temperature adjustment layer is greater than the density of the liquefied phase change material, so that the temperature of the phase change material filled in the temperature adjustment layer directly reflects the temperature of the cable main body in the area, and also reduces the heat exchange between the phase change material and the external environment, increases the working efficiency of the semiconductor refrigeration unit. At the same time, the debris generated during the deformation process of the temperature adjustment layer falls to the bottom of the phase change cavity, which is not easy to block the light reflection unit and the light sensing unit, and is not easy to affect the normal operation of the light reflection unit and the light sensing unit.

[0016] In summary, in the present application, the temperature adjustment layer is used to protect the connection between the cable main body and the cable joint. When the environmental change temperature where the cable main body and the cable joint are located is too high, the temperature sensor detects that the temperature of the phase change material reaches the preset interference temperature, and the programmable DC power supply supplies power to the semiconductor refrigeration unit, and realizes fast and efficient heat exchange through the first heat dissipation structure and the second heat dissipation structure respectively until the phase change material reaches the preset adjustment temperature, then the programmable DC power supply is turned off and the semiconductor refrigeration chip stops working. The phase change material absorbs or releases a large amount of heat during phase change, and it is not easy to have excessive thermal expansion and contraction, and it is not easy to cause irreversible damage to the working state of the cable main body.

[0017] Meanwhile, by adding a reflective unit and a photosensitive unit, on the basis of the temperature sensor detecting the temperature of the phase change material, the phase change process of the phase change material can be detected. When the phase change process of the phase change material is completed, the semiconductor refrigeration unit can be shut down in time, reducing the ineffective working time of the semiconductor refrigeration unit and effectively extending the working life of the semiconductor refrigeration unit. Description of the Drawings

[0018] Figure 1 Schematic diagram of the structure of the special cable for molten salt tower solar thermal power generation in the first embodiment of the present application; Figure 2 Side view of the structure of the special cable for molten salt tower solar thermal power generation in the first embodiment of the present application; Figure 3 is Figure 2 Schematic diagram of the structure at A in Figure 4 Schematic diagram of the structure of the semiconductor refrigeration sheet in the first embodiment of the present application; Figure 5 Schematic diagram of the structure of the first heat dissipation structure in the first embodiment of the present application; Figure 6 Schematic diagram of the structure of the second heat dissipation structure in the first embodiment of the present application; Figure 7 Schematic diagram of the structure of the bladeless fan in the first embodiment of the present application; Figure 8 Side view of the structure of the special cable for molten salt tower solar thermal power generation in the second embodiment of the present application; Figure 9 is Figure 8 Schematic diagram of the structure at B in Figure 10 Schematic diagram of the working of the light-emitting unit and the photosensitive unit in the second embodiment of the present application.

[0019] Explanation of the reference numerals in the drawings: 1 Cable main body, 2 Cable joint, 3 Temperature regulation layer, 4 Semiconductor refrigeration unit, 401 Semiconductor refrigeration sheet, 402 Power supply wire, 5 First heat dissipation structure, 501 Fixing ring, 502 Heat conduction column 1, 503 Heat dissipation fin 1, 504 Flow around hole, 6 Second heat dissipation structure, 601 Heat dissipation fin 2, 602 Heat conduction column 2, 603 Protection column, 7 Wire box, 701 Wire box main body, 702 Joint, 8 Temperature sensor, 9 Bladeless fan, 901 Working part, 902 Fan main body, 10 Reflective unit, 11 Photosensitive unit. Detailed Embodiment

[0020] The following will describe the two embodiments of the present application in detail with reference to the drawings.

[0021] The first embodiment: Figures 1-4 Disclosed is a cable structure dedicated for molten salt tower type solar thermal power generation, which includes a cable main body 1 and a cable joint 2 fixedly connected. A temperature regulation layer 3 and a wire box 7 are sleeved on one side of the cable main body 1 close to the cable joint 2. The wire box 7 is located on the side of the temperature regulation layer 3 close to the cable joint 2. A phase change cavity is dug in the temperature regulation layer 3, and a phase change material is filled in the phase change cavity. A plurality of temperature sensors 8 are fixedly connected to the side wall of the phase change cavity. A plurality of semiconductor refrigeration units 4 are buried in the temperature regulation layer 3. Each of the plurality of semiconductor refrigeration units 4 includes a semiconductor refrigeration chip 401. A pair of power supply wires 402 are fixedly connected to one end of each of the plurality of semiconductor refrigeration chips 401 close to the wire box 7, and the power supply wires 402 are electrically connected to the wire box 7. The wire box 7 includes a wire box main body 701. A pair of connectors 702 are inserted into the wire box main body 701. The positive and negative poles of the plurality of power supply wires 402 are respectively twisted to form two wire groups and are respectively electrically connected to the two connectors 702, and the connectors 702 are also connected with excessive wires, so that the connectors 702 can be pulled away from the wire box main body 701 by pulling; A heat dissipation structure one 5 is placed in the phase change cavity, and a heat dissipation structure two 6 is sleeved on the outside of the temperature regulation layer 3. Both the heat dissipation structure one 5 and the heat dissipation structure two 6 are made of high thermal conductivity materials, and both the heat dissipation structure one 5 and the heat dissipation structure two 6 are connected to the semiconductor refrigeration unit 4 and conduct heat.

[0022] In this application, the cable main body 1 is plugged into the corresponding electrical equipment through the cable joint 2, and a programmable DC power supply is arranged on the electrical equipment. The current output direction can be controlled under a pre-programmed program to realize current output in different directions under the same terminal, and further realize that when the semiconductor refrigeration chip 401 is under the action of current in different directions, the cooling and heating at both ends of the semiconductor refrigeration chip 401 can be interchanged.

[0023] In this application, the temperature regulation layer 3 is used to protect the connection between the cable main body 1 and the cable joint 2. During the day, the ambient temperature where the cable main body 1 and the cable joint 2 are located is too high. The temperature sensor 8 detects that the temperature of the phase change material reaches the preset interference temperature (judged by the staff according to the actual situation, which is higher than the phase change temperature of the phase change material and is likely to cause irreversible temperature to the working state of the cable main body 1). The programmable DC power supply supplies power to the semiconductor refrigeration unit 4. The side of the semiconductor refrigeration chip 401 close to the cable main body 1 cools, and the side of the semiconductor refrigeration chip 401 away from the cable main body 1 heats, and rapid and efficient heat exchange is respectively realized through the heat dissipation structure one 5 and the heat dissipation structure two 6. When the temperature detected by the temperature sensor 8 is lower than the phase change temperature of the phase change material, the programmable DC power supply is turned off, and the semiconductor refrigeration chip 401 stops working. The phase change of the phase change material absorbs a large amount of heat, ensuring that the cable main body 1 is at a relatively low working temperature in the environment for a long time, not easily expanding due to overheating, and not easily causing irreversible damage to the working state of the cable main body 1.

[0024] At night, the ambient temperature where the cable main body 1 and the cable joint 2 are located will be too low. When the temperature sensor 8 detects that the temperature reaches the preset interference temperature lower than the phase change temperature of the phase change material, on the contrary to the above process, the programmable DC power supply supplies power to the semiconductor refrigeration unit 4, and the supply current is reversed. The side of the semiconductor refrigeration chip 401 close to the cable main body 1 generates heat, and the side of the semiconductor refrigeration chip 401 far from the cable main body 1 refrigerates. When the temperature detected by the temperature sensor 8 is higher than the phase change temperature of the phase change material, the programmable DC power supply is turned off, and the semiconductor refrigeration chip 401 stops working. The heat released by the phase change of the phase change material is utilized to ensure that the cable main body 1 is at a relatively higher working temperature than the environment for a long time, and it is not easy to shrink due to overcooling, not easy to cause the connection failure of the cable joint 2, and not easy to cause the failure of the entire circuit.

[0025] At the same time, the power of the semiconductor refrigeration unit 4 is relatively large, which can release and absorb a large amount of heat in a short time and store it in the phase change material, avoiding the semiconductor refrigeration unit 4 working at a high power for a long time and not easy to cause the failure of the semiconductor refrigeration unit 4.

[0026] The phase change material is PCM-20, and its phase change temperature is 20 °C. During the phase change process of the phase change material, it will be at about 20 degrees Celsius for a long time, providing a suitable working temperature for the operation of the cable main body 1.

[0027] Please refer to Figure 2 and Figure 5 , the heat dissipation structure 1-5 includes a fixing ring 501. The fixing ring 501 is located in the phase change cavity. A first heat conduction column 502 is fixedly connected between the fixing ring 501 and each of the multiple semiconductor refrigeration chips 401. A first heat dissipation fin 503 is fixedly connected to the inner wall of the fixing ring 501, improving the heat exchange effect between the semiconductor refrigeration chip 401 and the phase change material. A plurality of flow around holes 504 are drilled in the first heat dissipation fin 503, and the flow around holes 504 on two adjacent first heat dissipation fins 503 are staggered, increasing the contact area between the heat dissipation structure 1-5 and the phase change material. At the same time, during the heating process of the phase change material by the heat dissipation structure 1-5, the warm current of the phase change material will be restricted and guided by the multiple first heat dissipation fins 503, increasing the flow distance and making the heating of the phase change material more uniform.

[0028] Please refer to Figure 2 and Figure 6, the second heat dissipation structure 6 includes heat dissipation fins two 601 sleeved outside the temperature adjustment layer 3. A second heat conduction column 602 is fixedly connected between each of the heat dissipation fins two 601 and the plurality of semiconductor refrigeration chips 401, enhancing the heat exchange effect between the semiconductor refrigeration chips 401 and the external environment. The outer end of the heat dissipation fins two 601 is fixedly connected with a plurality of protection columns 603. The plurality of protection columns 603 cover half of the outer wall area of the heat dissipation fins two 601. While reducing the heat dissipation of the outer wall of the heat dissipation fins two 601, it effectively protects the heat dissipation fins two 601, reducing the risk of deformation of the heat dissipation fins two 601 due to external force bumps.

[0029] Please refer to Figure 1 and Figure 7 , an airless fan 9 is sleeved outside the cable main body 1. The airless fan 9 is located on the side of the temperature adjustment layer 3 away from the cable joint 2. The airless fan 9 includes a working part 901. The lower end of the working part 901 is fixedly connected with a fan main body 902. The working part 901 generates wind during operation, causing the air in the area where the airless fan 9 is located to flow from the temperature adjustment layer 3 towards the airless fan 9, enhancing the heat exchange effect of the second heat dissipation structure 6. The fan main body 902 carries the structures for the normal operation of the airless fan 9, such as a power supply unit and an air pressurization device, achieving the effect of driving air flow, accelerating the air flow in the area where the second heat dissipation structure 6 is located, and increasing the heat dissipation effect.

[0030] The second implementation mode: Figures 8-9 The temperature adjustment layer 3 is shown. A reflective unit 10 and a photosensitive unit 11 with matching positions are fixedly connected to the inner wall of the phase change cavity, and both the reflective unit 10 and the photosensitive unit 11 are located above the cable main body 1. The area of the photosensitive unit 11 is larger than that of the reflective unit 10.

[0031] Since the temperature does not change significantly during the phase change of the phase change material, during the operation of the semiconductor refrigeration unit 4, when the temperature sensor 8 detects that the temperature change is higher or lower than the phase change point of the phase change material, the semiconductor refrigeration unit 4 has already overworked. In this implementation mode, the introduced reflective unit 10 and photosensitive unit 11 can detect the specific phase change process of the phase change material during the phase change of the phase change material by using the principle that the scattering rate of light is different in different forms of the same substance. At the same time, since the reflective unit 10 and the photosensitive unit 11 are installed at relatively marginal positions of the phase change cavity, when the phase change of the phase change material is detected at their positions, most of the phase change material has already completed the phase change, and it is not easy to have the phenomenon of detection error.

[0032] Please refer to Figure 10, when the phase change material is in a liquid state, the light scattering rate of the light reflecting unit 10 is relatively low. The solid line direction in the figure represents the scattering limit, and the light receiving area that the light sensing unit 11 can receive is relatively small. As the phase change material gradually solidifies, its scattering rate will also increase. The dotted line direction in the figure represents the scattering limit when the phase change material is solid, and the light receiving area that the light sensing unit 11 can receive increases. Therefore, when the semiconductor refrigeration unit 4 is started, the light reflecting unit 10 and the light sensing unit 11 can be started simultaneously to detect the state of the phase change material, more directly reflecting the situation of the phase change material. With the assistance of the temperature detection of the temperature sensor 8, the semiconductor refrigeration unit 4 can be shut down in a timely manner, reducing the ineffective working time of the semiconductor refrigeration unit 4 and effectively extending the working life of the semiconductor refrigeration unit 4.

[0033] The part of the temperature regulating layer 3 away from the cable body 1 is made of adiabatic elastic material, and the part of the temperature regulating layer 3 close to the cable body 1 is made of heat-conducting elastic material. Moreover, the material density of the temperature regulating layer 3 is greater than the density of the phase change material after liquefaction, so that the temperature of the phase change material filled in the temperature regulating layer 3 directly reflects the temperature of the cable body 1 in the corresponding area, and also reduces the heat exchange between the phase change material and the external environment, increasing the working efficiency of the semiconductor refrigeration unit 4. At the same time, the debris generated during the deformation process of the temperature regulating layer 3 falls to the bottom of the phase change cavity, which is not easy to block the light reflecting unit 10 and the light sensing unit 11 and does not easily affect the normal operation of the light reflecting unit 10 and the light sensing unit 11.

[0034] Compared with the first embodiment, in this embodiment, by adding the light reflecting unit 10 and the light sensing unit 11, on the basis of the temperature sensor 8 detecting the temperature of the phase change material, the phase change process of the phase change material can be detected. When the phase change process of the phase change material is completed, the semiconductor refrigeration unit 4 can be shut down in a timely manner, reducing the ineffective working time of the semiconductor refrigeration unit 4 and effectively extending the working life of the semiconductor refrigeration unit 4.

[0035] Combined with the current actual needs, the above-mentioned embodiments adopted in this application are not limited to this scope. Within the knowledge scope of those skilled in the art, various changes made without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A cable structure for molten salt tower type solar thermal power generation, comprising a cable main body (1) and a cable joint (2) fixedly connected, characterized in that: On one side of the cable main body (1) close to the cable joint (2), a temperature regulation layer (3) and a wire box (7) are sleeved. The wire box (7) is located on the side of the temperature regulation layer (3) close to the cable joint (2). A phase change cavity is dug in the temperature regulation layer (3), and a phase change material is filled in the phase change cavity. A plurality of temperature sensors (8) are fixedly connected to the side wall of the phase change cavity. A plurality of semiconductor refrigeration units (4) are buried in the temperature regulation layer (3), and the semiconductor refrigeration units (4) are electrically connected to the wire box (7). The wire box (7) includes a wire box main body (701), and a pair of connectors (702) are plugged on the wire box main body (701); A heat dissipation structure one (5) is placed in the phase change cavity, and a heat dissipation structure two (6) is sleeved outside the temperature regulation layer (3). Both the heat dissipation structure one (5) and the heat dissipation structure two (6) are made of high thermal conductivity materials. A reflective unit (10) and a photosensitive unit (11) with matching positions are fixedly connected to the inner wall of the phase change cavity.

2. The structure of a special cable for molten salt tower type solar thermal power generation according to claim 1, wherein: A plurality of the semiconductor refrigeration units (4) each include a semiconductor refrigeration chip (401). At one end of a plurality of the semiconductor refrigeration chips (401) close to the wire box (7), a pair of power supply wires (402) are fixedly connected. The positive and negative poles of a plurality of the power supply wires (402) are respectively twisted to form two groups of wires and are respectively electrically connected to two connectors (702).

3. The structure of a special cable for molten salt tower solar thermal power generation according to claim 1, characterized in that: The phase change material is PCM-20, and its phase change temperature is 20 °C.

4. The structure of a special cable for molten salt tower solar thermal power generation according to claim 1, wherein: The heat dissipation structure one (5) includes a fixing ring (501). The fixing ring (501) is located in the phase change cavity. A heat conduction column one (502) is fixedly connected between the fixing ring (501) and a plurality of the semiconductor refrigeration chips (401). A heat dissipation fin one (503) is fixedly connected to the inner wall of the fixing ring (501).

5. The structure of a special cable for molten salt tower type solar thermal power generation according to claim 4, characterized in that: A plurality of flow around holes (504) are dug in the heat dissipation fin one (503), and the flow around holes (504) on adjacent two heat dissipation fins one (503) are staggeredly distributed.

6. The structure of a special cable for molten salt tower solar thermal power generation according to claim 1, characterized in that: The heat dissipation structure two (6) includes a heat dissipation fin two (601) sleeved outside the temperature regulation layer (3). A heat conduction column two (602) is fixedly connected between the heat dissipation fin two (601) and a plurality of the semiconductor refrigeration chips (401).

7. The structure of a special cable for molten salt tower solar thermal power generation according to claim 6, characterized in that: A plurality of protection columns (603) are fixedly connected to the outer end of the heat dissipation fin two (601), and the plurality of protection columns (603) cover half of the outer wall area of the heat dissipation fin two (601).

8. The structure of a special cable for molten salt tower type solar thermal power generation according to claim 1, characterized in that: An airless fan (9) is sleeved outside the cable main body (1). The airless fan (9) is located on the side of the temperature regulation layer (3) away from the cable joint (2). The airless fan (9) includes a working part (901), and a fan main body (902) is fixedly connected to the lower end of the working part (901).

9. The structure of a special cable for molten salt tower solar thermal power generation according to claim 1, characterized in that: The part of the temperature regulation layer (3) away from the cable main body (1) is made of a heat-insulating elastic material, and the part of the temperature regulation layer (3) close to the cable main body (1) is made of a heat-conducting elastic material. Moreover, the material density of the temperature regulation layer (3) is greater than the density of the liquefied phase change material.

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