A multilayer coating method for nano-optical lenses for semiconductor manufacturing and its application

Abstract

The present invention relates to the field of optical thin film technology, and specifically to a multilayer coating method and application of nano-optical lenses for semiconductor manufacturing. In order to improve the anti-fouling and anti-reflection properties of the optical lenses, the present invention performs a multilayer coating treatment on the surface of the optical lenses. After polishing and cleaning the lenses, the present invention further performs an etching and activation treatment on the surface to increase the contact area of ​​subsequent coating layers, increase the bite points, and improve the bonding strength between the coating and the glass substrate. In addition, the present invention also sputters a layer of silicon film on the surface, and treats the silicon layer in a hydrogen and argon mixed atmosphere and in a SF6 and argon mixed gas atmosphere, respectively, thereby forming different property modifications of the silicon layer, improving the bonding performance with the glass substrate, and on this basis, sputters a layer of fluorine calcium layer with high light transmittance on the surface, thereby ultimately achieving the low reflection performance of the lens.

Description

Technical Field

[0001] The present invention relates to the field of optical thin film technology, and in particular to a multilayer coating method and application of nano-optical lenses for semiconductor manufacturing. Background Art

[0002] With the continuous development of my country's electronic technology, semiconductor products have also occupied an increasingly important position in our daily lives. However, in the current process of semiconductor preparation, optical lenses, as core components, are involved in the entire process of semiconductor preparation, which has a vital impact on the preparation quality and yield of semiconductors. For example, laser processing in the semiconductor preparation process has an extremely high impact on the transmittance, refractive index, reflectivity and other properties of optical lenses. Therefore, in order to further improve the yield of semiconductor products, it is necessary to further research and develop improvements on optical lenses. Summary of the Invention

[0003] The purpose of the present invention is to provide a multilayer coating method and application of nano-optical lenses for semiconductor manufacturing to solve the problems raised in the prior art.

[0004] To achieve the above-mentioned object, the present invention provides the following technical solution: a multilayer coating method for nano-optical lenses for semiconductor manufacturing, comprising the following steps:

[0005] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0006] S2. The polished glass lens was ultrasonically cleaned in deionized water for 10-20 minutes. After drying the surface with hot air, it was again placed in acetone and anhydrous ethanol, ultrasonically cleaned for 10-20 minutes, and dried for later use.

[0007] S3. Place the cleaned glass lens in an etchant and activation gas atmosphere at a pressure of 0.05-0.15 Pa. After etching and activation for 15-30 minutes, evacuate the glass lens and reintroduce pure activation gas at a pressure of 0.1-0.25 Pa for another 5-10 minutes. Remove the lens from the etchant and activation gas atmosphere to obtain the activated glass lens.

[0008] S4. Place the activated glass lens in a vacuum sputtering reactive coating machine. After evacuation, introduce argon gas into the machine at a pressure of 0.01-0.1 Pa. Use medium-frequency magnetron sputtering with a high-purity silicon target as the sputtering source at a power of 5-10 kW.

[0009] S5. Place the lens, after sputtering the silicon layer, in a mixed gas atmosphere. Control the vacuum level to 0.001-0.1 Pa and the operating voltage to 1.2-3 kV. After 2-4 minutes of treatment, once a silicon-hydrogen layer has formed on the lens surface, switch the working gas atmosphere to a mixed gas atmosphere of SF6 and argon. Maintain the working pressure for another 30-45 seconds until a fluorine-silicon layer is formed. Remove the lens and set aside.

[0010] S6. Place the lens with a fluorine-silicon layer formed on the surface in a vacuum chamber, use a CaF2 ceramic target as a sputtering source, and after evacuation, introduce a mixed gas atmosphere of argon and SF6 into the chamber, controlling the working pressure to 0.1~2.5Pa. After the sputtering is completed, a nano-optical lens for semiconductor manufacturing is obtained.

[0011] Furthermore, in step S3, the etching gas is C2F6; and the activation gas is oxygen.

[0012] Furthermore, in step S3, the volume ratio of the etching gas to the activation gas is (1-4):1.

[0013] Furthermore, in step S3, during etching activation, the operating voltage is 800-1200V and the temperature is raised to 350-450°C.

[0014] Furthermore, in step S5, the mixed gas is a mixed gas of hydrogen and argon, wherein the volume ratio of hydrogen to argon is (0.5-2):10.

[0015] Furthermore, in step S5, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is (0.01-0.1):10.

[0016] Furthermore, in step S6, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is (0.1-1.2):10.

[0017] Furthermore, in step S6, during sputtering, the operating temperature is controlled to be 15-25° C. and the sputtering power is controlled to be 180-800W.

[0018] Furthermore, the coating method can be used for surface coating of optical lenses used in semiconductor manufacturing.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] In order to improve the anti-fouling and anti-reflection properties of the optical lens, the present invention performs a multi-layer coating process on the surface of the optical lens. After the lens is polished and cleaned, the surface is further etched and activated. Under the action of low-temperature plasma, organic contamination residues on the surface are further removed, thereby improving the coating quality in subsequent steps and preventing voids or peeling of the coating layer. After the etching and activation process, a nano-microstructure is formed on the surface of the quartz glass, thereby increasing the contact area of ​​the subsequent coating layer, increasing the bite points, and improving the bonding strength between the coating and the glass substrate.

[0021] In addition, after etching the lens, the present invention also sputters a layer of silicon film on its surface and modifies the silicon layer under different gas atmospheres. The present invention first performs hydrogen silicification on the silicon layer in a hydrogen and argon mixed atmosphere. The refractive index of the hydrogen silicon layer is generally 1.45-1.48, which is similar to that of the quartz glass substrate, and has high transmittance and hardness similar to that of quartz glass, and can have good bonding strength with the quartz glass. On this basis, the present invention further uses SF6 and argon mixed gas atmosphere to treat the silicon layer to form a fluorine silicon layer, and then sputters a layer of fluorine calcium layer with high transmittance on its surface, thereby ultimately achieving low reflective performance of the lens. DETAILED DESCRIPTION

[0022] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of the present invention.

[0023] Example 1. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0024] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0025] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0026] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 800 V. The temperature is raised to 450°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0027] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 1:1;

[0028] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0029] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0030] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 0.5:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.01:10;

[0031] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0032] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0033] Example 2. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0034] Compared with Example 1, this embodiment increases the volume ratio of the etching gas in step S3;

[0035] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0036] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0037] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 800 V. The temperature is raised to 450°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0038] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 4:1;

[0039] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0040] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0041] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 0.5:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.01:10;

[0042] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0043] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0044] Example 3. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0045] Compared with Example 2, this embodiment increases the working voltage of the etching activation in step S3 and reduces the etching activation temperature;

[0046] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0047] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0048] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 1200 V. The temperature is raised to 350°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0049] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 4:1;

[0050] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0051] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0052] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 0.5:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.01:10;

[0053] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0054] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0055] Example 4. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0056] Compared with Example 3, this embodiment increases the volume ratio of hydrogen in step S5;

[0057] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0058] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0059] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 1200 V. The temperature is raised to 350°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0060] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 4:1;

[0061] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0062] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0063] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 2:10; in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.01:10;

[0064] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0065] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0066] Example 5. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0067] Compared with Example 4, this embodiment increases the volume ratio of SF6 in step S5;

[0068] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0069] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0070] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 1200 V. The temperature is raised to 350°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0071] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 4:1;

[0072] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0073] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0074] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 2:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.1:10;

[0075] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0076] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0077] Example 6. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0078] Compared with Example 5, this embodiment increases the volume ratio of SF6 in step S6;

[0079] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0080] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0081] S3. Place the cleaned glass lens in an etching and activation gas atmosphere at a pressure of 0.05 Pa. During the etching and activation process, the operating voltage is 1200 V. The temperature is raised to 350°C. After etching and activation for 30 minutes, the lens is evacuated and the pure activation gas is introduced again at a pressure of 0.1 Pa. The process is continued for 10 minutes before removal to obtain the activated glass lens.

[0082] Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is 4:1;

[0083] S4. The activated glass lens was placed in a vacuum sputtering reactive coating machine. After evacuation, argon gas was introduced into the machine, and the pressure was controlled at 0.01 Pa. Medium-frequency magnetron sputtering was performed using a high-purity silicon target as the sputtering source. The sputtering power was 5 kW.

[0084] S5. Place the lens after the sputtered silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0085] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 2:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.1:10;

[0086] S6. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber, controlling the operating pressure to be between 0.1 and 2.5 Pa, the operating temperature to be 20°C, and the sputtering power to be 180 W, yields a nano-optical lens for semiconductor manufacturing.

[0087] Among them, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 1.2:10.

[0088] Comparative Example 1. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0089] Compared with Example 1, this comparative example did not perform steps S3 to S5;

[0090] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0091] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0092] S3. Place the lens in a vacuum chamber, using a CaF2 ceramic target as a sputtering source. After evacuation, introduce a mixed gas atmosphere of argon and SF6. The operating pressure is controlled between 0.1 and 2.5 Pa, the operating temperature is controlled at 20°C, and the sputtering power is controlled at 180 W. After the sputtering is completed, a nano-optical lens for semiconductor manufacturing is obtained.

[0093] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0094] Comparative Example 2. A multilayer coating method for a nano-optical lens for semiconductor manufacturing, comprising the following steps:

[0095] Compared with Example 1, this comparative example did not perform step S3;

[0096] S1. The glass lens surface is ground, rough polished, fine polished, and set aside;

[0097] S2. The polished glass lens was placed in deionized water, ultrasonically cleaned for 15 minutes, and then dried with hot air. The surface was then placed in acetone and anhydrous ethanol, ultrasonically cleaned for 15 minutes, and dried for later use.

[0098] S3. Place the glass lens in a vacuum sputtering reactive coating machine. After evacuation, introduce argon gas to the coating machine, control the pressure to 0.01 Pa, and perform medium-frequency magnetron sputtering. A high-purity silicon target is used as the sputtering source. The sputtering power is 5 kW.

[0099] S4. Place the lens after sputtering the silicon layer in a mixed gas atmosphere, control the vacuum to 0.001 Pa, control the operating voltage to 1.2 kV, and process for 4 minutes. After the silicon hydrogen layer is formed on the lens surface, the working gas atmosphere is switched to a mixed atmosphere of SF6 and argon. The working pressure is maintained and the process is continued for 30 seconds to form a fluorine silicon layer. Remove and set aside.

[0100] The mixed gas is a mixture of hydrogen and argon with a volume ratio of 0.5:10; the mixed gas of SF6 and argon has a volume ratio of SF6 to argon of 0.01:10;

[0101] S5. Placing the lens with the fluorine-silicon layer formed on its surface in a vacuum chamber, using a CaF2 ceramic target as a sputtering source, and evacuating the chamber. Then, introducing a mixed gas atmosphere of argon and SF6 into the chamber. The operating pressure was controlled between 0.1 and 2.5 Pa, the operating temperature was controlled at 20°C, and the sputtering power was controlled at 180 W. After the sputtering was completed, a nano-optical lens for semiconductor manufacturing was obtained.

[0102] Wherein, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is 0.1:10.

[0103] Testing: The nano-optical lenses prepared in Examples 1 to 6 and Comparative Examples 1 to 2 were prepared into samples with a silicon layer thickness of 120 nm and a calcium fluoride layer thickness of 70 nm. The refractive index of the film was measured using a spectroscopic ellipsometer; the ultraviolet light transmittance was measured using an ultraviolet-visible spectrophotometer.

[0104] The above samples were heated to 500°C at a rate of 1.5°C / min and held at that temperature for 15 minutes. Then, they were cooled to room temperature at a rate of 1.5°C / min and held at that temperature for 15 minutes. This step was repeated 30 times. The adhesion of the lens surface coating was tested according to GB / T 9286-1998. The test results are shown in the table below.

[0105]

[0106] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art will be able to modify the technical solutions described in the aforementioned embodiments or substitute equivalents for some of the technical features. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A multilayer coating method for nano-optical lenses for semiconductor manufacturing, characterized in that: The following steps are involved: S1. The glass lens surface is ground, rough polished, fine polished, and set aside; S2. The polished glass lens was ultrasonically cleaned in deionized water for 10-20 minutes. After drying the surface with hot air, it was again placed in acetone and anhydrous ethanol, ultrasonically cleaned for 10-20 minutes, and dried for later use. S3. Place the cleaned glass lens in an etchant and activation gas atmosphere at a pressure of 0.05-0.15 Pa. After etching and activation for 15-30 minutes, evacuate the glass lens and reintroduce pure activation gas at a pressure of 0.1-0.25 Pa for another 5-10 minutes. Remove the lens from the etchant and activation gas atmosphere to obtain the activated glass lens. Wherein, the etching gas is C2F6; the activation gas is oxygen; the volume ratio of the etching gas to the activation gas is (1-4):1; During etching activation, the operating voltage is 800~1200V and the temperature is raised to 350~450℃; S4. Place the activated glass lens in a vacuum sputtering reactive coating machine. After evacuation, introduce argon gas to the machine at a pressure of 0.01-0.1 Pa. Use medium-frequency magnetron sputtering with a high-purity silicon target as the sputtering source at a power of 5-10 kW. S5. Place the lens, after sputtering the silicon layer, in a mixed gas atmosphere of hydrogen and argon. Control the vacuum level to 0.001-0.1 Pa and the operating voltage to 1.2-3 kV. After 2-4 minutes of treatment, once a silicon-hydrogen layer has formed on the lens surface, switch the working gas atmosphere to a mixed gas atmosphere of SF6 and argon. Maintain the working pressure for another 30-45 seconds until a fluorine-silicon layer is formed. Remove the lens and set aside. S6. Place the lens with a fluorine-silicon layer formed on the surface in a vacuum chamber, use a CaF2 ceramic target as a sputtering source, and after evacuation, introduce a mixed gas atmosphere of argon and SF6 into the chamber, controlling the working pressure to 0.1~2.5Pa. After the sputtering is completed, a nano-optical lens for semiconductor manufacturing is obtained.

2. The multi-layer coating method for nano-optical lenses for semiconductor manufacturing according to claim 1, characterized in that: In step S5, the mixed gas of hydrogen and argon has a volume ratio of hydrogen to argon of (0.5-2):

10.

3. The multi-layer coating method for nano-optical lenses for semiconductor manufacturing according to claim 1, characterized in that: In step S5, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is (0.01-0.1):

10.

4. The multi-layer coating method for nano-optical lenses for semiconductor manufacturing according to claim 1, characterized in that: In step S6, in the mixed gas of SF6 and argon, the volume ratio of SF6 to argon is (0.1-1.2):

10.

5. The multi-layer coating method for nano-optical lenses for semiconductor manufacturing according to claim 1, characterized in that: In step S6, during sputtering, the operating temperature is controlled to be 15-25° C. and the sputtering power is controlled to be 180-800W.

6. An application of the multi-layer coating method according to any one of claims 1 to 5, characterized in that: The coating method is used for surface coating of optical lenses used in semiconductor manufacturing.

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