Silicon carbide MOSFET batch measurement circuit, control method, terminal and medium

Abstract

The invention discloses a silicon carbide MOSFET batch measurement circuit, a control method, a terminal and a medium, based on the specific silicon carbide MOSFET batch measurement circuit, an upper computer sends an instruction to a relay controller, and relays connected with all silicon carbide MOSFET elements can be correctly switched on and off. When parameters of a certain silicon carbide MOSFET element need to be measured, the relays at the drain electrode and the grid electrode of the element are turned on through the upper computer, the relays of other loops are turned off, and measurement is achieved. If a plurality of elements need to be measured, only the relay of the loop corresponding to a single element needs to be switched on, the relay is switched off after the measurement is finished, and the relay of the loop corresponding to the next element is switched on at the moment until all silicon carbide MOSFET elements are measured, so that static parameter measurement of the plurality of MOSFET elements can be realized by utilizing the relay controller and the upper computer; the elements do not need to be replaced frequently, and the measurement efficiency of the static parameters of the large-scale silicon carbide MOSFET is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a silicon carbide MOSFET batch measurement circuit and control method. Background Art

[0002] The current level of commercial silicon carbide MOSFET single components is not enough to meet the needs of high-power applications. It is necessary to use multiple silicon carbide MOSFET components in parallel to achieve high-power applications. The parasitic parameters between silicon carbide MOSFET components are more different than those of silicon IGBT components. Static and dynamic parameters such as on-resistance, threshold voltage, transconductance, parasitic capacitance and other parameters are unevenly distributed, resulting in differences, which makes the current distribution of parallel components unbalanced. It will also cause voltage overshoot and unbalanced current in some components during the rapid disconnection of the parallel components inside the silicon carbide power module. Finally, the temperature of the parallel components may be inconsistent due to the difference in current distribution. Excessive temperature will increase the risk of component failure, and then cause the parallel components inside the silicon carbide power module to fail due to overcurrent. Therefore, the component parameters are measured to grasp the differences between the parameters of each component, and the results of the measurement are used for sorting, so that the parameters of the sorted components are consistent. The electrical equipment composed of the sorted components in parallel will have significantly improved current distribution, which is of great significance to improving the reliability and service life of electrical equipment.

[0003] Today's SiC MOSFET static parameter measurements are mainly based on the existing Agilent B1505A power analyzer, which can achieve all-round measurement of the static characteristic curve of SiC MOSFET. However, this solution can only measure one component at a time. With the development of parallel connection of components, the existing measurement method can no longer meet the increasing demand for component sorting. Summary of the invention

[0004] The present application provides a silicon carbide MOSFET batch measurement circuit and control method, which are used to solve the technical problem that the existing silicon carbide MOSFET measurement method can no longer meet the increasing demand for component sorting.

[0005] In order to solve the above technical problems, the first aspect of the present application provides a silicon carbide MOSFET batch measurement circuit, including: a high power module, a high current module, a switch controller, and a component measurement assembly module;

[0006] The component measurement assembly module is configured with three main interfaces, which are respectively used to connect the positive electrode of the high-power module and the positive and negative electrodes of the high-current module;

[0007] The component measurement and assembly module is configured with several groups of component measurement sub - circuits connected in parallel, and each component measurement sub - circuit is configured with a MOSFET component test position for assembling the MOSFET component to be measured;

[0008] Each MOSFET component test position is configured with three sub - interfaces for connecting the pins of each MOSFET component to the corresponding main interface respectively;

[0009] The switch controller is used to control the relay switch, and the relay switch is used to control the access or cut - out of the component measurement sub - circuit.

[0010] Preferably, the relay switch includes: a first relay switch and a second relay switch;

[0011] Each component measurement sub - circuit includes a first relay switch and a second relay switch. Among them, the first relay switch is used to control the on - off between the high - power module and the gate of the MOSFET component to be measured, and the second relay switch is used to control the on - off between the large - current module and the source and drain of the MOSFET component to be measured.

[0012] Meanwhile, a second aspect of the present application provides a method for controlling the batch measurement of silicon carbide MOSFETs, which is applied to a silicon carbide MOSFET batch measurement circuit provided in the first aspect of the present application, including:

[0013] In response to the measurement task start instruction, send a control instruction to the switch controller to control the relay switch of any group of component measurement sub - circuits in the silicon carbide MOSFET batch measurement circuit to close, and disconnect the relay switches of the remaining component measurement sub - circuits;

[0014] Send a control instruction to the power analysis device so that the power analysis device controls the high - power module and the large - current module to measure the MOSFET component according to a preset automated measurement script, and obtain the static parameter measurement result of the currently measured MOSFET component;

[0015] Sequentially send control instructions to the switch controller and the power analysis device so that the switch controller switches the accessed component measurement sub - circuit, and then the power analysis device measures the newly accessed MOSFET component until all the MOSFET components in all component measurement sub - circuits are measured.

[0016] Preferably, the static parameters include: threshold voltage, on - resistance, transfer curve, and output curve.

[0017] Preferably, according to a preset automated measurement script, control the high-power module and the large-current module to measure the MOSFET component, and the obtained static parameter measurement results of the currently measured MOSFET component include:

[0018] Apply a voltage to the gate of the MOSFET component to be measured through the high-power module and apply a current pulse to the source and drain of the MOSFET component to be measured through the large-current module. According to the obtained current data and voltage data, determine the transfer curve and output curve of the MOSFET component;

[0019] According to the transfer curve and the output curve, respectively determine the threshold voltage and on-resistance of the MOSFET component.

[0020] Preferably, the current data and voltage data specifically include: gate voltage, drain-source current, and drain-source voltage.

[0021] Preferably, according to the obtained current data and voltage data, determining the transfer curve and output curve of the MOSFET component specifically includes:

[0022] Set the gate-source voltage range and step size required for measurement in the high-power module, output a stepped voltage to the gate of the MOSFET component, gradually increase the voltage level, and then set a constant-amplitude pulse voltage value in the large-current module to apply a pulsed voltage with an amplitude to the drain-source of the MOSFET component. Measure the drain-source current corresponding to this gate voltage under a constant drain-source voltage. According to the variation relationship between the gate voltage and the drain-source current, obtain the transfer curve of the MOSFET component;

[0023] Set a constant-amplitude gate-source voltage value in the high-power module, apply this constant voltage to the gate of the MOSFET component, and then set the required drain-source voltage range and step size in the large-current module to apply a pulsed voltage to the drain-source of the MOSFET component and gradually increase the amplitude of the pulsed voltage. Measure the drain-source current corresponding to this drain-source voltage under a constant gate-source voltage. According to the variation relationship between the drain-source voltage and the drain-source current, obtain the output curve of the MOSFET component.

[0024] Preferably, according to the transfer curve measurement method and the output curve measurement method, respectively determining the threshold voltage and on-resistance of the MOSFET component specifically includes:

[0025] According to the transfer curve measurement method, a rated drain-source current threshold is set. When the drain-source current exceeds the drain-source current threshold during the measurement process, the gate-source voltage when the threshold is exceeded and the corresponding drain-source current at this time are extracted, and the gate-source voltage and the corresponding drain-source current when the previous threshold is not exceeded are extracted; according to the linear interpolation method, the gate-source voltage of the MOSFET component corresponding to when the drain-source current is equal to the set threshold is calculated, and this gate-source voltage is the threshold voltage:

[0026]

[0027] Among them, V th is the threshold voltage to be obtained, V gs(n) is the gate-source voltage when the threshold is exceeded, V gs(n-1) is the gate-source voltage when the threshold is not exceeded, I ds(n) is the gate-source voltage when the threshold is exceeded and the corresponding drain-source current at this time, I ds(n-1) is the gate-source voltage when the threshold is not exceeded and the corresponding drain-source current, I ds(set,n) is the set drain-source current threshold;

[0028] When the drain-source current exceeds the drain-source current threshold during the measurement process, the drain-source voltage and the corresponding drain-source current at this time are extracted, and the drain-source voltage and the corresponding drain-source current when the previous threshold is not exceeded are extracted; according to the linear interpolation method, the resistance of the MSOFET component corresponding to when the drain-source current is equal to the set threshold is calculated, and this resistance is the on-resistance:

[0029]

[0030] Among them, R ds(on) is the on-resistance to be obtained, V ds(n) is the drain-source voltage when the threshold is exceeded, V ds(n-1) is the gate-source voltage when the threshold is not exceeded, I ds(n) is the drain-source voltage when the threshold is exceeded and the corresponding drain-source current at this time, I ds(n-1) is the drain-source current corresponding to the drain-source voltage when the threshold is not exceeded.

[0031] The third aspect of the present application provides a host computer terminal, including: a memory and a processor;

[0032] The memory is used to store program codes, and the program codes are used to implement a method for controlling the batch measurement of silicon carbide MOSFETs provided in the first aspect of the present application;

[0033] The processor is used to read and execute the program codes.

[0034] The fourth aspect of this application provides a computer-readable storage medium, in which program code is stored and is used to be read and executed by a processor to implement a method for controlling batch measurement of silicon carbide MOSFETs provided in the first aspect of this application.

[0035] As can be seen from the above technical solutions, this application has the following advantages:

[0036] Based on a specific batch measurement circuit of silicon carbide MOSFETs, this application issues instructions from a host computer to a relay controller to enable the correct opening and closing of the relays connected to each silicon carbide MOSFET component. When measuring the parameters of a certain silicon carbide MOSFET component, the relays at the drain and gate of the component are turned on through the host computer, and the relays in other circuits are turned off to achieve measurement. If multiple components need to be measured, only the relays corresponding to the single-component loop need to be turned on. After the measurement is completed, they are turned off, and the relays corresponding to the next component loop are turned on at this time until the measurement of all silicon carbide MOSFET components is completed. Through the solution of this application, the static parameters of multiple MOSFET components can be measured by using a relay controller and a host computer, without the need for manual frequent replacement of components, greatly improving the measurement efficiency of the static parameters of large-scale silicon carbide MOSFETs. After obtaining the static parameters of large-scale chips, sorting is carried out according to different chip consistency requirements, such as transfer curves / output curves. The sorted chips are paralleled to further improve the current balance ability between the paralleled chips, which can comprehensively improve the life and reliability of the equipment and system composed of the paralleled chips. Description of the Drawings

[0037] In order to more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of this application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0038] Figure 1 It is an equivalent circuit diagram of a prior art silicon carbide MOSFET static parameter measurement circuit based on Agilent B1505.

[0039] Figure 2 It is an equivalent circuit diagram of a batch measurement circuit of silicon carbide MOSFETs provided by this application.

[0040] Figure 3 It is a schematic flow diagram of a control method for a batch measurement circuit of silicon carbide MOSFETs provided by this application.

[0041] Figure 4It is the overall logic flow chart of a control method for a batch measurement circuit of a silicon carbide MOSFET provided by this application.

[0042] Figure 5 It is the schematic diagram of the logic for measuring the static parameters of a single-chip silicon carbide MOSFET.

[0043] Figure 6 It is the schematic diagram of the structure of a host computer terminal embodiment for implementing a control method for a batch measurement circuit of a silicon carbide MOSFET provided by this application. Detailed implementation manners

[0044] As Figure 1 shown, the Agilent B1505A power analyzer measures static parameters, mainly using two measurement modules, namely the high-power module (High Power Source / Monitor Unit, HPSMU) and the high-current module (High Current Source / Monitor Unit, HCMSU). Among them, the HPSMU outputs current and voltage at the rated power, and the HCSMU outputs pulsed high current for measurement. By using the above two power modules, the measurement of the static parameters of the silicon carbide MOSFET can be realized. In the measurement of the static parameters of the silicon carbide MOSFET, for the gate-source electrode, since the current passing through is much smaller than the drain-source current, the influence can be ignored, so the gate is measured using a DC source. Therefore, the HCSMU is connected between the drain and the source, and the HPSMU is connected to the gate. During the measurement, the HPSMU applies the corresponding voltage on the gate, and the HCSMU applies a current pulse between the drain and the source according to the set value. The two modules respectively measure the corresponding gate voltage (V GS ), drain-source current (I DS ), and drain-source voltage (V DS ).

[0045] The existing measurement of the static parameters of the silicon carbide MOSFET is based on the Agilent B1505 and can only measure a single component. When multiple components need to be measured, the components need to be replaced manually, which greatly increases the time and labor costs. In order to adapt to the current environment of high demand for semiconductor components, therefore, research on the measurement method and system for large-scale multi-component silicon carbide MOSFETs must be carried out to solve the problem of low measurement efficiency of multi-components today.

[0046] The embodiment of this application provides a batch measurement circuit and a control method for a silicon carbide MOSFET, which are used to solve the technical problem that the existing measurement method of the silicon carbide MOSFET can no longer meet the increasing demand for component sorting, and helps to improve the lifespan and reliability of equipment and systems composed of parallel chips.

[0047] To make the invention objectives, features, and advantages of this application more obvious and understandable, the following will clearly and completely describe the technical solutions in the embodiments of this application in conjunction with the accompanying drawings in the embodiments of this application. Obviously, the embodiments described below are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of this application.

[0048] As Figure 2 shown, a silicon carbide MOSFET batch measurement circuit provided by this application includes: a high-power module HP, a high-current module HC, a switch controller C, and a component measurement and assembly module M;

[0049] The component measurement and assembly module M is configured with three main interfaces, which are respectively used to connect the positive electrode of the high-power module HP and the positive and negative electrodes of the high-current module HC;

[0050] The component measurement and assembly module M is internally configured with several groups of component measurement sub-circuits connected in parallel, and each component measurement sub-circuit is configured with a MOSFET component test position for assembling the MOSFET components to be measured;

[0051] Each MOSFET component test position is configured with three sub-interfaces for connecting the pins of each MOSFET component to the corresponding main interface respectively;

[0052] The switch controller C is used to control the relay switch, and the relay switch is used to control the access or cut-out of the component measurement sub-circuit.

[0053] More specifically, the relay switch includes: a first relay switch and a second relay switch;

[0054] Each component measurement sub-circuit includes a first relay switch and a second relay switch. Among them, the first relay switch is used to control the on-off between the high-power module HP and the gate of the MOSFET component to be measured, and the second relay switch is used to control the on-off between the high-current module HC and the source and drain of the MOSFET component to be measured.

[0055] It should be noted that in actual static parameter measurement, considering that only a single component can be measured during the measurement by Agilent B1505, relays are used to control the multi-component measurement, so that the parameters of multiple components can be measured in an orderly manner. The specific circuit structure is as Figure 2 shown. The HCSMU and HP modules in Agilent B1505 are respectively connected to the drain-source and gate of the silicon carbide MOSFET. Therefore, the relays need to control the drain and gate respectively, and the source can be used as the common source without relay control.

[0056] Since a large number of relays are required to control the measurement of large-scale silicon carbide MOSFET components, a relay controller needs to be connected to the relays. Instructions are sent to the relay controller through the host computer to ensure that the relays connected to each silicon carbide MOSFET component can be correctly turned on and off. When measuring the parameters of a certain silicon carbide MOSFET component, the relays at the drain and gate of the component are turned on through the host computer, and the relays in other circuits are turned off to perform the measurement and obtain the static parameter measurement results of the silicon carbide MOSFET component.

[0057] Furthermore, based on the silicon carbide MOSFET batch measurement circuit provided in the above embodiment, the present application also provides a corresponding silicon carbide MOSFET batch measurement control method. The silicon carbide MOSFET batch measurement control method provided by the present application is specifically as follows:

[0058] Please refer to Figure 3 and Figure 4 , an embodiment of the silicon carbide MOSFET batch measurement control method provided by the present application includes:

[0059] Step 101: In response to the measurement task start instruction, send a control instruction to the switch controller to control the relay switch of any group of component measurement sub-circuits in the silicon carbide MOSFET batch measurement circuit to close, and disconnect the relay switches of the remaining component measurement sub-circuits;

[0060] Step 102: Send a control instruction to the power analysis device to enable the power analysis device to control the high-power module and the large-current module to measure the MOSFET component according to a preset automated measurement script, and obtain the static parameter measurement results of the currently measured MOSFET component;

[0061] Step 103: Sequentially send control instructions to the switch controller and the power analysis device to enable the switch controller to switch the connected component measurement sub-circuit, and then the power analysis device measures the newly connected MOSFET component until all the MOSFET components in all the component measurement sub-circuits are measured.

[0062] It should be noted that based on the silicon carbide MOSFET batch measurement circuit provided in the above embodiment, the silicon carbide MOSFET batch measurement control method provided in this embodiment, such as Figure 4As shown, in this solution, the host computer issues instructions to the relay controller to enable the relays connected to each silicon carbide MOSFET component to be correctly switched on and off. When measuring the parameters of a certain silicon carbide MOSFET component, an instruction is sent from the host computer to control the switch controller to close the relay at the drain and gate of the MOSFET component and open the relays in other circuits to achieve the measurement, so as to obtain the static parameter measurement results of the silicon carbide MOSFET component. If multiple components need to be measured, only the relay in the corresponding circuit of a single component needs to be turned on, disconnected after the measurement, and then the relay in the corresponding circuit of the next component is closed to continue the measurement until all the silicon carbide MOSFET components assembled in the measurement circuit are measured and the control process ends. Finally, based on the static parameters of the large-scale MOSFET chips obtained in the previous measurement process, the chips can be sorted and paralleled to improve the life and reliability of the equipment and systems composed of the paralleled chips.

[0063] More specifically, the static parameters mentioned in this embodiment include: threshold voltage, on-resistance, transfer curve, and output curve.

[0064] Furthermore, in step 102 of this embodiment, controlling the high-power module and the large-current module to measure the MOSFET component according to the preset automated measurement script, and obtaining the static parameter measurement results of the currently measured MOSFET component includes:

[0065] Applying a voltage to the gate of the MOSFET component to be measured through the high-power module and applying a current pulse to the source and drain of the MOSFET component to be measured through the large-current module, and determining the transfer curve and output curve of the MOSFET component according to the obtained current data and voltage data;

[0066] Determining the threshold voltage and on-resistance of the MOSFET component respectively according to the transfer curve and output curve.

[0067] More specifically, the current data and voltage data specifically include: gate voltage, drain-source current, and drain-source voltage.

[0068] More specifically, determining the transfer curve and output curve of the MOSFET component according to the obtained current data and voltage data specifically includes:

[0069] Starting from a zero voltage, the high-power module outputs a stepped voltage to the gate of the MOSFET component according to the voltage step size, gradually increasing the voltage level until the set voltage threshold is reached. The large-current module applies a pulsed voltage with a constant amplitude to the drain-source of the MOSFET component, measures the drain-source current at different gate voltages under a constant drain-source voltage, and obtains the transfer curve of the MOSFET component according to the variation relationship between the gate voltage and the drain-source current;

[0070] According to the set gate voltage value, the high-power module applies a constant DC voltage to the gate of the MOSFET element. The high-current module starts from zero voltage and applies a pulsed voltage to the drain-source of the MOSFET element according to the voltage step, gradually increasing the pulsed voltage amplitude until the set voltage threshold is reached, measuring the drain-source current corresponding to different drain-source voltages under a constant gate voltage, and obtaining the output curve of the MOSFET element according to the variation relationship between the drain-source voltage and the drain-source current.

[0071] It should be noted that when measuring the transfer curve, the gate voltage outputs a DC voltage in a stepped manner, gradually increasing the voltage level, applying a pulsed voltage with a constant amplitude to the drain-source, measuring the drain-source current, and obtaining the curve; when measuring the output curve, a constant DC voltage is applied to the gate voltage, a pulsed voltage is applied to the drain-source, and the pulsed voltage amplitude is gradually increased from zero until the set value, measuring the drain-source current under different drain-source voltages, and obtaining the curve.

[0072] Based on the measured transfer curve and output curve, further measurements of the threshold voltage and on-resistance are carried out as follows:

[0073] According to the transfer curve measurement method, based on referring to the device data sheet, a rated drain-source current threshold is set. When the drain-source current exceeds the threshold during the measurement process, the gate-source voltage when exceeding the threshold and the corresponding drain-source current at this time are extracted, and the gate-source voltage and the corresponding drain-source current when not exceeding the threshold for the previous time are extracted; according to the linear interpolation method, the gate-source voltage of the MOSFET element corresponding to when the drain-source current is equal to the set threshold is calculated, and this gate-source voltage is the threshold voltage:

[0074]

[0075] Among them, V th is the threshold voltage to be calculated, V gs(n) is the gate-source voltage when exceeding the threshold, V gs(n-1) is the gate-source voltage when not exceeding the threshold, I ds(n) is the gate-source voltage when exceeding the threshold and the corresponding drain-source current at this time, I ds(n-1) is the gate-source voltage when not exceeding the threshold and the corresponding drain-source current, I ds(set,n) is the set drain-source current threshold;

[0076] According to the measurement method of the output curve, based on the reference device data sheet, set the rated drain-source current threshold. When the drain-source current exceeds the threshold during the measurement, extract the drain-source voltage and the corresponding drain-source current at this time, and extract the drain-source voltage and the corresponding drain-source current when the previous value did not exceed the threshold; calculate the resistance of the MSOFET component corresponding to the set threshold when the drain-source current is equal to the set threshold according to the linear interpolation method, and this resistance is the on-resistance:

[0077]

[0078] Among them, R ds(on) is the on-resistance to be obtained, V ds(n) is the drain-source voltage when it exceeds the threshold, V ds(n-1) is the gate-source voltage when it does not exceed the threshold, I ds(n) is the drain-source voltage when it exceeds the threshold and the corresponding drain-source current at this time, I ds(n-1) is the drain-source current corresponding to the drain-source voltage when it does not exceed the threshold.

[0079] It should be noted that in this system, the threshold voltage is obtained from the transfer curve. When the drain-source current in the transfer curve reaches the specified current value, the corresponding gate voltage is the threshold voltage. Therefore, to obtain the threshold voltage, a certain drain-source current value needs to be specified first, and the gate voltage corresponding to this drain-source current is the threshold voltage. After the transfer curve of the silicon carbide MOSFET component is tested, find the values and corresponding gate voltages that are slightly lower and slightly higher than the specified drain-source current value from the transfer curve data, and use the linear interpolation method to obtain the threshold voltage value. The on-resistance is obtained from the output curve under a certain specific gate voltage. When the drain-source current reaches the specified current value, the ratio of the corresponding drain-source voltage and the drain-source current is the on-resistance . Therefore, to obtain the on-resistance, a certain drain-source current value needs to be specified first, and the ratio of the drain-source voltage to this current value under this drain-source current is the on-resistance. After the output curve of the silicon carbide MOSFET component is tested, find the values and corresponding drain-source voltages that are slightly lower and slightly higher than the specified drain-source current value from the output curve data, and use the linear interpolation method to obtain the corresponding drain-source voltage value, and then obtain the on-resistance. The specific measurement logic of each static parameter of the silicon carbide MOSFET is as Figure 5 shown:

[0080] Figure 5Shows the logical flow of the host computer controlling the Agilent B1505 to measure the relevant parameters of a single-chip silicon carbide MOSFET, which is divided into four parts:

[0081] 1) Measuring the transfer curve:

[0082] Set parameters:

[0083] ① Starting value, ending value and step size of the gate voltage (V GS )

[0084] ② Amplitude of the drain-source pulse voltage

[0085] ③ Pulse period and width

[0086] ④ Current thresholds of the drain-source and gate-source

[0087] After the settings are completed, the measurement is carried out directly.

[0088] Measuring the output curve:

[0089] Set parameters:

[0090] ① Starting value, ending value and step size of the amplitude of the drain-source pulse voltage

[0091] ② Starting value, ending value and step size of the gate voltage (V GS )

[0092] ③ Pulse period and width

[0093] ④ Current thresholds of the drain-source and gate-source

[0094] After the settings are completed, the measurement is carried out directly.

[0095] Measuring the threshold voltage:

[0096] Set parameters:

[0097] ① Drain-source current value (I DS ) when calculating the threshold voltage

[0098] ② Starting value, ending value and step size of the gate voltage (V GS )

[0099] ③ Amplitude of the drain-source pulse voltage

[0100] ④ Pulse period and width

[0101] ⑤ Current thresholds of the drain-source and gate-source

[0102] The threshold voltage (V GS (th)) is calculated by the interpolation method.

[0103] Measuring the on-resistance:

[0104] Setting parameters:

[0105] ① The drain-source current value (I DS ) when calculating the on-resistance;

[0106] ② The specific gate voltage (V GS );

[0107] ③ The starting value, ending value and step size of the amplitude of the drain-source pulse voltage;

[0108] ④ The pulse period and width;

[0109] ⑤ The current thresholds of the drain-source and gate-source.

[0110] Use the interpolation method to obtain the voltage (V DS ) at the set drain-source current, and then calculate the on-resistance through R DS(on) = V DS / I DS .

[0111] In summary, in the measurement logic of the static parameters of the silicon carbide MOSFET on a large scale, the measurement logic of the static parameters of a single component is combined with the measurement control logic of multiple components, enabling the measurement of the parameters of multiple components without manual measurement of a single component, greatly improving the measurement efficiency.

[0112] The above is a detailed description of an embodiment of a method for controlling the batch measurement of silicon carbide MOSFETs provided by this application. The following is a detailed description of an embodiment of a host computer terminal and an embodiment of a computer-readable storage medium provided by this application.

[0113] As Figure 6 shown, a host computer terminal provided by an embodiment of this application, the types of the terminal include but are not limited to: personal computers, industrial computers, servers, and embedded intelligent devices, including: a memory 33 and a processor 31; the memory 33 and the processor 31 can be connected through a communication bus 34.

[0114] The memory is used to store program codes, and the program codes are used to implement a method for controlling the batch measurement of silicon carbide MOSFETs as provided in the above embodiment;

[0115] The processor is used to read and execute the program codes.

[0116] A fourth aspect of this application provides a computer-readable storage medium, in which program codes are stored, and the program codes are used to be read and executed by a processor to implement a method for controlling the batch measurement of silicon carbide MOSFETs as provided in the above embodiment.

[0117] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the terminals and devices described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0118] In several embodiments provided in the present application, it should be understood that the disclosed terminals, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the couplings, direct couplings, or communication connections shown or discussed with each other can be through some interfaces, and the indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.

[0119] The terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present application described herein, for example, can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device comprising a series of steps or units does not have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0120] It should be understood that in the present application, "at least one (item)" means one or more, and "a plurality" means two or more. "And / or" is used to describe the association relationship of associated objects and indicates that there can be three relationships. For example, "A and / or B" can mean: only A exists, only B exists, and both A and B exist at the same time. Among them, A and B can be singular or plural. The character " / " generally means that the associated objects before and after are in an "or" relationship. "At least one (one) of the following" or its similar expression means any combination of these items, including any combination of single item (one) or plural items (ones). For example, at least one (one) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0121] The unit described as a separation component may or may not be physically separated. The component shown as a unit may or may not be a physical unit, that is, it may be located in one place or may be distributed across multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0122] In addition, each functional unit in various embodiments of the present invention may be integrated in a processing unit, may exist physically separately for each unit, or two or more units may be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

[0123] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to enable a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage medium includes: USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs and other various media that can store program codes.

[0124] As described above, the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of various embodiments of the present application.

Claims

1. A batch measurement circuit for a silicon carbide MOSFET, characterized in that, Comprising: A high-power module, a large-current module, a switch controller, and a component measurement and assembly module; The component measurement and assembly module is configured with three main interfaces, which are respectively used to connect the positive electrode of the high-power module and the positive and negative electrodes of the large-current module; A number of groups of component measurement sub-circuits connected in parallel are configured in the component measurement and assembly module, and each component measurement sub-circuit is configured with a MOSFET component test position for assembling the MOSFET component to be measured; Each MOSFET component test position is configured with three sub-interfaces for connecting the pins of each MOSFET component to the corresponding main interface respectively; The switch controller is used to control a relay switch, and the relay switch is used to control the access or cut-out of the component measurement sub-circuit; 2. The batch measurement circuit of a silicon carbide MOSFET according to claim 1, characterized in that The relay switch includes: a first relay switch and a second relay switch; Each component measurement sub-circuit includes a first relay switch and a second relay switch. Among them, the first relay switch is used to control the on-off of the high-power module and the gate of the MOSFET component to be measured, and the second relay switch is used to control the on-off of the large-current module and the source and drain of the MOSFET component to be measured.

3. A batch measurement control method for a silicon carbide MOSFET, which is applied to a batch measurement circuit for a silicon carbide MOSFET as described in claims 1 to 2, and is characterized in that, Comprising: In response to a measurement task start instruction, sending a control instruction to the switch controller to control the relay switch of any group of component measurement sub-circuits in the silicon carbide MOSFET batch measurement circuit to close, and disconnect the relay switches of the remaining component measurement sub-circuits; Sending a control instruction to the power analysis device so that the power analysis device controls the high-power module and the large-current module to measure the MOSFET component according to a preset automated measurement script, and obtains the static parameter measurement result of the currently measured MOSFET component; Sequentially sending control instructions to the switch controller and the power analysis device so that the switch controller switches the accessed component measurement sub-circuit, and then the power analysis device measures the newly accessed MOSFET component until the MOSFET components in all component measurement sub-circuits are all measured.

4. A method for batch measurement control of a silicon carbide MOSFET according to claim 3, characterized in that, The static parameters include: threshold voltage, on-resistance, transfer curve, and output curve.

5. A method for controlling batch measurement of a silicon carbide MOSFET according to claim 4, characterized in that, The controlling the high-power module and the large-current module to measure the MOSFET component according to a preset automated measurement script and obtaining the static parameter measurement result of the currently measured MOSFET component includes: Applying a voltage to the gate of the MOSFET component to be measured through the high-power module and applying a current pulse to the source and drain of the MOSFET component to be measured through the large-current module, and determining the transfer curve and output curve of the MOSFET component according to the obtained current data and voltage data; Determining the threshold voltage and on-resistance of the MOSFET component respectively according to the transfer curve and the output curve; 6. A method for controlling the batch measurement of a silicon carbide MOSFET according to claim 5, characterized in that, The current data and voltage data specifically include: gate voltage, drain-source current, and drain-source voltage; 7. A method for batch measurement control of a silicon carbide MOSFET according to claim 6, characterized in that Determining the transfer curve and output curve of the MOSFET component according to the obtained current data and voltage data specifically includes: Set the gate-source voltage range and step required for measurement in the high-power module, output a stepped voltage to the gate of the MOSFET element, gradually increase the voltage level, and then set a pulsed voltage value with a constant amplitude in the high-current module, apply the pulsed voltage to the drain-source of the MOSFET element, measure the drain-source current corresponding to this gate voltage under a constant drain-source voltage, and obtain the transfer curve of the MOSFET element according to the variation relationship between the gate voltage and the drain-source current; Set a gate-source voltage value with a constant amplitude in the high-power module, apply this constant voltage to the gate of the MOSFET element, then set the required drain-source voltage range and step in the high-current module, apply a pulsed voltage to the drain-source of the MOSFET element, and gradually increase the amplitude of the pulsed voltage, measure the drain-source current corresponding to this drain-source voltage under a constant gate-source voltage, and obtain the output curve of the MOSFET element according to the variation relationship between the drain-source voltage and the drain-source current.

8. A method for batch measurement control of a silicon carbide MOSFET according to claim 6, characterized in that, Determining the threshold voltage and on-resistance of the MOSFET element according to the transfer curve and the output curve respectively includes: According to the measurement method of the transfer curve, set a rated drain-source current threshold. When the drain-source current exceeds the drain-source current threshold during the measurement, extract the gate-source voltage when it exceeds the threshold and the corresponding drain-source current at this time, and extract the gate-source voltage and the corresponding drain-source current when the previous one did not exceed the threshold; calculate the gate-source voltage of the MOSFET element when the drain-source current is equal to the set threshold according to the linear interpolation method, and this gate-source voltage is the threshold voltage: Among them, V th is the threshold voltage to be obtained, V gs(n) is the gate-source voltage when exceeding the threshold, V gs(n-1) is the gate-source voltage when not exceeding the threshold, I ds(n) is the gate-source voltage when exceeding the threshold and the corresponding drain-source current at this time, I ds(n-1) is the gate-source voltage when not exceeding the threshold and the corresponding drain-source current, I ds(set,n) is the set drain-source current threshold; When the drain-source current exceeds the drain-source current threshold during the measurement, extract the drain-source voltage when it exceeds the threshold and the corresponding drain-source current at this time, and extract the drain-source voltage and the corresponding drain-source current when the previous one did not exceed the threshold; calculate the resistance of the MSOFET element corresponding to when the drain-source current is equal to the set threshold according to the linear interpolation method, and this resistance is the on-resistance: Wherein, R ds(on) is the on-resistance to be obtained, V ds(n) is the drain-source voltage when exceeding the threshold, V ds(n-1) is the gate-source voltage when not exceeding the threshold, I ds(n) is the drain-source voltage when exceeding the threshold and the corresponding drain-source current at this time, I ds(n-1) is the drain-source current corresponding to the drain-source voltage when not exceeding the threshold.

9. An upper computer terminal, characterized in that, Including: A memory and a processor; The memory is used to store program codes, and the program codes are used to implement a method for batch measurement control of a silicon carbide MOSFET as described in any one of claims 3 to 8; The processor is used to read and execute the program codes.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores program codes, and the program codes are used to be read and executed by the processor to implement a method for batch measurement control of a silicon carbide MOSFET as described in any one of claims 3 to 8.

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