Substrate processing apparatus including shared RF generator

Abstract

A substrate processing apparatus is disclosed. An example substrate processing apparatus may include a plurality of annealing chambers; a shared RF generator configured to generate plasma to the annealing chamber; wherein the shared RF generator is electrically coupled to the anneal chamber via the RF frequency divider; wherein the RF frequency divider is provided with a plurality of RF cables, each of which is electrically coupled to each of the annealing chambers, respectively.

Description

Technical Field

[0001] The present disclosure generally relates to substrate processing equipment. More specifically, exemplary embodiments of the present disclosure relate to substrate processing equipment including a shared RF generator. Background Art

[0002] Substrate processing equipment is widely used to process substrates, such as forming thin films on substrates. Semiconductor processing equipment typically includes (i) a plurality of processing modules; (ii) a substrate transfer chamber having a substrate transfer robot; and (iii) a load lock chamber for loading or unloading substrates.

[0003] Each processing module may include four reaction chambers. An exemplary substrate processing equipment including four reaction chambers (which are referred to as a quad chamber module (QCM)) is disclosed in U.S. Patent No. US10,777,445, which is incorporated herein by reference.

[0004] Each chamber may include a pedestal to support a substrate. Processes such as film formation, film modification, etching, annealing, etc. can be performed on the substrate in each chamber. These processes can be performed by plasma equipment, such as plasma enhanced chemical vapor deposition (PECVD) equipment, plasma enhanced atomic layer deposition process (PEALD) equipment, etc.

[0005] An RF generator generates RF power in the plasma equipment. The RF power is supplied to an electrode via a matching unit and an RF cable in the reaction chamber, thereby generating plasma in the reaction chamber.

[0006] Currently, each chamber has its own RF generator and matching unit, thereby increasing the cost of the processing module.

[0007] Any discussion set forth in this section (including discussions of problems and solutions) has been included in the present disclosure solely for the purpose of providing background for the present disclosure and should not be construed as an admission that any or all of the discussion was known or otherwise constituted prior art at the time the invention was made. Summary of the Invention

[0008] The present invention content is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the detailed description of the exemplary embodiments of the present disclosure below. The present invention content is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0009] According to an exemplary embodiment of the present disclosure, a substrate processing apparatus is provided. The substrate processing apparatus may include a plurality of annealing chambers; a shared RF generator configured to generate plasma for the annealing chambers; wherein the shared RF generator is electrically connected to the annealing chambers via an RF divider; wherein the RF divider is provided with a plurality of RF cables, and each of the RF cables is electrically connected to each of the annealing chambers respectively.

[0010] According to another exemplary embodiment of the present disclosure, plasma may be generated before providing the substrate to the annealing chamber.

[0011] According to another exemplary embodiment of the present disclosure, the temperature of the annealing chamber may be between 100 °C and 800 °C.

[0012] According to another exemplary embodiment of the present disclosure, the annealing chamber may further include a susceptor heater configured and arranged to support the substrate, wherein the susceptor heater may include ceramics. The ceramics may include at least one of Al2O3, AlN, SiC, or Si3N4.

[0013] According to another exemplary embodiment of the present disclosure, a shared RF matcher may be provided between the shared RF generator and the RF divider.

[0014] According to another exemplary embodiment of the present disclosure, an ammeter may be provided between the shared RF generator and the RF divider.

[0015] According to another exemplary embodiment of the present invention, the ammeter may be configured to measure current.

[0016] According to another exemplary embodiment of the present invention, a controller may be electrically connected to the ammeter, wherein the controller may be configured to generate an alarm when the output of the ammeter deviates from a normal value.

[0017] According to another exemplary embodiment of the present disclosure, the controller may be configured to stop the operation of the shared RF generator based on the output of the ammeter.

[0018] According to another exemplary embodiment of the present disclosure, the substrate processing apparatus may further include a plurality of deposition chambers; a plurality of RF generators configured to generate a second plasma for the deposition chambers; wherein each of the RF generators may be electrically connected to the deposition chambers.

[0019] According to another exemplary embodiment of the present disclosure, the second plasma may be generated when a gap filling deposition process can be performed in the deposition chamber.

[0020] According to another exemplary embodiment of the present disclosure, the temperature of the deposition chamber may be between 50 °C and 550 °C.

[0021] According to another exemplary embodiment of the present disclosure, the deposition chamber may further include a second susceptor heater configured and arranged to support a substrate, wherein the second susceptor heater may include aluminum.

[0022] According to another exemplary embodiment of the present disclosure, the annealing chamber module may include a plurality of annealing chambers, and the deposition chamber module may include a plurality of deposition chambers.

[0023] According to another exemplary embodiment of the present disclosure, the substrate processing apparatus may further include: a substrate transfer chamber having a plurality of sides, wherein the annealing chamber module may be attached to one of the sides; wherein the deposition chamber module may be attached to one of the sides; a backend robot for transferring the substrate, the backend robot being disposed in the substrate transfer chamber; and a load lock chamber for loading or unloading the substrate, the load lock chamber being attached to one of the sides. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] A more complete understanding of the exemplary embodiments of the present disclosure can be obtained by reference to the detailed description and the claims when considered in conjunction with the following illustrative drawings.

[0025] Figure 1 A schematic plan view of a substrate processing apparatus having a four-chamber module according to an exemplary embodiment of the present disclosure is shown.

[0026] Figure 2 A schematic view of a four-chamber module having an annealing chamber according to an exemplary embodiment of the present disclosure is shown.

[0027] Figure 3 A schematic view of a four-chamber module having a deposition chamber according to an exemplary embodiment of the present disclosure is shown.

[0028] Figure 4 A plasma device according to an exemplary embodiment of the present disclosure is shown.

[0029] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the drawings may be exaggerated relative to other elements to assist in understanding the disclosed embodiments of the present disclosure. DETAILED DESCRIPTION

[0030] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specifically disclosed embodiments and / or uses thereof and their obvious modifications and equivalents. Accordingly, it is intended that the scope of the disclosed invention not be limited by the specific disclosed embodiments described below.

[0031] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. A substrate in the form of a plate can include wafers of various shapes and sizes. A substrate can be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0032] As an example, a substrate in the form of powder can have applications in pharmaceutical manufacturing. A porous substrate can include polymers. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tooling devices, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, among others.

[0033] A continuous substrate can extend beyond the boundaries of a processing chamber in which a deposition process occurs. In some processes, the continuous substrate can move through the processing chamber such that the process continues until the end of the substrate is reached. A continuous substrate can be supplied from a continuous substrate feed system to allow for the fabrication and output of the continuous substrate in any suitable form.

[0034] Non-limiting examples of continuous substrates can include sheets, non-woven membranes, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (such as ceramic fibers or polymer fibers). A continuous substrate can also include a carrier or sheet on which a discontinuous substrate is mounted.

[0035] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device, but are merely idealized representations for describing embodiments of the present disclosure.

[0036] The specific embodiments shown and described are illustrative of the invention and its best mode and are not intended to limit the scope of the aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Additionally, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical couplings between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system and / or may not exist in some embodiments.

[0037] It should be understood that the configurations and / or methods described herein are exemplary in nature and that these specific embodiments or examples should not be regarded as limiting in any way, as many variations are possible. The specific routines or methods described herein can represent one or more of any number of processing strategies. Accordingly, the various acts shown can be performed in the order shown, in other orders, or in some cases, omitted.

[0038] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, and configurations disclosed herein, as well as other features, functions, acts, and / or properties, and any and all equivalents thereof.

[0039] In the present disclosure, "gas" can include materials that are gaseous at normal temperature and pressure, evaporated solids, and / or evaporated liquids, and can consist of a single gas or a gas mixture, depending on the context. The gas introduced without passing through a gas supply unit (such as a shower plate, etc.) can be used, for example, to seal the reaction space and can include a sealing gas, such as a noble gas or other inert gas. The terms inert gas, carrier gas, and diluent gas refer to gases that do not participate in chemical reactions to a perceptible extent when plasma power is applied and / or gases that can excite precursors.

[0040] As used herein, the terms "film" and "thin film" can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. "Film" and "thin film" can include materials or layers having pinholes but are still at least partially continuous.

[0041] Figure 1 is a schematic plan view of a substrate processing apparatus having a four-chamber module in an embodiment of the present invention. The substrate processing apparatus can include: (i) four processing modules 20, 22, 24, 26, each processing module having four reaction chambers RC1, RC2, RC3, RC4; (ii) a substrate transfer chamber 30 including two back-end robots 32 (substrate handling robots); and (iii) a load lock chamber 40 for simultaneously loading or unloading two substrates, the load lock chamber 40 being attached to an additional side of the substrate transfer chamber 30, wherein each back-end robot 32 can access the load lock chamber 40. Each of the back-end robots 32 can have at least two end effectors that can simultaneously access two reaction chambers of each unit. The substrate transfer chamber 30 has a polygonal shape having four sides respectively corresponding to and attached to the four processing modules 20, 22, 24, 26, and an additional side for the load lock chamber 40, and all sides are disposed in the same plane. The interiors of each of the processing modules 20, 22, 24, 26 and the interior of the load lock chamber 40 can be isolated from the interior of the substrate transfer chamber 30 by gate valves.

[0042] In some embodiments, a controller (not shown) may store software programmed to perform, for example, a series of substrate transfers. The controller may also: check the status of each processing chamber; use a sensing system to position substrates in each processing chamber; control the gas cabinets; control the electrical boxes of each module; control the front-end robot 56 in the equipment front-end module based on the allocation status of substrates stored in the FOUP 52 and the load lock chamber 40; control the back-end robot 32; and control the control gate valves and other valves.

[0043] Those skilled in the art will understand that the equipment may include one or more controllers programmed or otherwise configured to perform the annealing and deposition processes described elsewhere herein. As will be understood by those skilled in the art, the controller may communicate with various power supplies, heating systems, pumps, robots, gas flow controllers, or valves.

[0044] In some embodiments, the equipment may have any number of chambers and processing modules greater than one (e.g., 2, 3, 4, 5, 6, or 7). In Figure 1 this example, the equipment has sixteen reaction chambers, but it may have 20 or more. In some embodiments, the reaction chambers of the module may be any suitable reactor for processing or treating wafers, including annealing reactors, CVD reactors (such as plasma-enhanced CVD reactors and thermal CVD reactors), or ALD reactors (such as plasma-enhanced ALD reactors and thermal ALD reactors). Generally, the reaction chambers may be deposition chambers for depositing films or layers on wafers and annealing chambers for annealing films or layers. The processing module 20 may be a deposition chamber module. The processing module 22 may be an annealing chamber module.

[0045] Figure 2 A schematic diagram of a four-chamber module with an annealing chamber according to an exemplary embodiment of the present disclosure is shown. The annealing chamber module 220 may include four annealing chambers 221, 222, 223, 224. A shared RF generator 225 may be configured to generate plasma for the annealing chambers 221, 222, 223, 224.

[0046] The shared RF generator 225 may be electrically coupled to the annealing chambers 221, 222, 223, 224 via an RF divider 228. The RF divider 228 may be provided with four RF cables 229a to 229d. Each of the RF cables 229a to 229d may be electrically coupled to each of the annealing chambers 221, 222, 223, 224, respectively. A shared RF matcher 226 may be provided between the shared RF generator 225 and the RF divider 228.

[0047] Plasma may be generated before providing the substrate to the annealing chamber. A pre-coating process using plasma may be performed in the annealing chamber before providing the substrate to the annealing chamber.

[0048] The temperature of the annealing chamber can be between 100 °C and 800 °C. The annealing process can be performed after the substrate is provided to the annealing chamber.

[0049] The ammeter 227 can be disposed between the shared RF generator 225 and the RF divider 228. The ammeter 227 can be configured to measure current. The controller 300 can be electrically connected to the ammeter 227. The controller 300 can be configured to generate an alarm when the output of the ammeter 227 deviates from a normal value. For example, when the RF cable is disconnected or the cable connection is loose, the output may deviate from the normal value. The controller 300 can be configured to stop the operation of the shared RF generator 225 based on the output of the ammeter 227.

[0050] The shared RF generator 225, the shared RF matcher 226, and the ammeter 227 can be configured as a single RF unit. The ammeter 227 can be built into the shared RF matcher 226.

[0051] Figure 3 A schematic diagram of a four-chamber module having a deposition chamber according to an exemplary embodiment of the present disclosure is shown. The deposition chamber module 200 can include four deposition chambers 201, 202, 203, 204. Each of the RF generators 211, 212, 213, 214 can be configured to generate a second plasma to each of the deposition chambers 201, 202, 203, 204, respectively.

[0052] When a gap-fill deposition process can be performed in the deposition chamber, a second plasma can be generated. After the gap-fill deposition process is completed, the substrate in the deposition chamber can be transferred to the annealing chamber module via the substrate transfer chamber 30 by the backend robot 32. The material deposited on the substrate by the gap-fill deposition process can be annealed in the annealing chamber. The material can include carbon, silicon carbide, silicon oxide (SiO x ) and silicon nitride (SiN x ). The temperature of the deposition chamber can be between 50 °C and 550 °C, which can be lower than the temperature of the annealing chamber.

[0053] Figure 4 A plasma device 500 according to an exemplary embodiment of the present disclosure is shown. The plasma device 500 can be used to perform one or more steps or sub-steps as described herein and / or form one or more structures or one or more parts thereof as described herein.

[0054] The plasma device 500 may include a pair of conductive plate electrodes 4 and 2 that are parallel and face each other in the interior 11 (reaction zone) of the reaction chamber 3. Plasma can be excited in the reaction chamber 3 by applying, for example, HRF power (such as 13.56 MHz, 27 MHz, or 60 MHz) and / or low-frequency power from the RF generator 25 to one electrode (such as electrode 4) via an RF matcher and electrically grounding the other electrode (such as the susceptor heater 2).

[0055] The susceptor heater 2 may be disposed in the reaction chamber 3, and the temperature of the substrate 1 placed thereon can be maintained at a desired temperature. When the susceptor heater is used for a deposition process, the susceptor heater may include aluminum. When the susceptor heater is used for an annealing process, the susceptor heater may include ceramics. The ceramics may include at least one of Al2O3, AlN, SiC, or Si3N4.

[0056] The electrode 4 can be used as a gas distribution device, such as a showerhead. One or more of the gas line 20, the gas line 21, and the gas line 22 can be used respectively to introduce reactant gases, dilution gases (if any), precursor gases, etc. into the reaction chamber 3 through the showerhead 4. Although shown as having three gas lines, the reactor system 500 may include any suitable number of gas lines.

[0057] In the reaction chamber 3, a circular conduit 13 having an exhaust gas line 7 can be provided, and the gas in the interior 11 of the reaction chamber 3 can be discharged through the exhaust gas line 7. Additionally, the transfer chamber 5 provided below the reaction chamber 3 can be provided with a seal gas line 24 to introduce seal gas into the interior 11 of the reaction chamber 3 via the interior 16 (transfer zone) of the transfer chamber 5, where a separation plate 14 for separating the reaction zone and the transfer zone can be provided (the gate valve through which the wafer is transferred in and out of the transfer chamber 5 is omitted in this figure). The transfer chamber can also be provided with an exhaust gas line 6. In some embodiments, the deposition and processing steps can be performed in the same reaction space such that two or more (such as all) steps can be continuously performed without exposing the substrate to air or other oxygen-containing atmospheres.

[0058] The above-described exemplary embodiments of the present disclosure do not limit the scope of the present invention because these embodiments are merely examples of the embodiments of the present invention. Any equivalent embodiments are intended to fall within the scope of the present invention. In fact, various modifications of the present disclosure, such as alternative useful combinations of the described elements, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A substrate processing apparatus, comprising: A plurality of annealing chambers; A shared RF generator configured to generate plasma for the annealing chambers; Wherein, the shared RF generator is electrically connected to the annealing chambers via an RF divider; Wherein, the RF divider is provided with a plurality of RF cables, and each of the RF cables is electrically connected to each of the annealing chambers respectively.

2. The substrate processing apparatus according to claim 1, wherein, The plasma is generated before the substrate is provided to the annealing chambers.

3. The substrate processing apparatus according to claim 1, wherein, The temperature of the annealing chambers is between 100 °C and 800 °C.

4. The substrate processing apparatus according to claim 1, wherein, The annealing chambers further include a susceptor heater configured and arranged to support the substrate, wherein the susceptor heater includes ceramics.

5. The substrate processing apparatus according to claim 1, wherein, The susceptor heater includes at least one of Al2O3, AlN, SiC or Si3N4.

6. The substrate processing apparatus according to claim 1, further comprising a shared RF matcher provided between the shared RF generator and the RF divider.

7. The substrate processing apparatus according to claim 1, further comprising an ammeter provided between the shared RF generator and the RF divider.

8. The substrate processing apparatus according to claim 7, wherein, The ammeter is configured to measure current.

9. The substrate processing apparatus according to claim 8, further comprising a controller electrically connected to the ammeter, wherein the controller is configured to generate an alarm when the output of the ammeter deviates from a normal value.

10. The substrate processing apparatus according to claim 9, wherein, The controller is configured to stop the operation of the shared RF generator based on the output of the ammeter.

11. The substrate processing apparatus according to claim 1, further comprising: A plurality of deposition chambers; A plurality of RF generators configured to generate a second plasma for the deposition chambers; Wherein, each of the RF generators is electrically connected to each of the deposition chambers respectively.

12. The substrate processing apparatus according to claim 11, wherein, The second plasma is generated when a gap filling deposition process is performed in the deposition chambers.

13. The substrate processing apparatus according to claim 11, wherein, The temperature of the deposition chambers is between 50 °C and 550 °C.

14. The substrate processing apparatus according to claim 11, wherein, The deposition chambers further include a second susceptor heater configured and arranged to support the substrate, wherein the second susceptor heater includes aluminum.

15. The substrate processing apparatus according to claim 11, wherein, The annealing chamber module includes the plurality of annealing chambers; Wherein, the deposition chamber module includes the plurality of deposition chambers.

16. The substrate processing apparatus according to claim 15, further comprising: A substrate transfer chamber having a plurality of sides, Wherein, the annealing chamber module is attached to one of the sides; Wherein, the deposition chamber module is attached to one of the sides; A backend robot for transferring the substrate, the backend robot being disposed in the substrate transfer chamber; and A load lock chamber for loading or unloading the substrate, the load lock chamber being attached to one of the sides.

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