Thin film deposition method and storage device manufacturing method

Abstract

The thin film deposition method according to the present invention comprises: a step of supplying a metal precursor to the inside of a chamber in which a substrate is placed so as to adsorb the metal precursor on the substrate; a step of purifying the inside of the cavity; and a step of supplying a reaction substance to the inside of the cavity so that the reaction substance reacts with the adsorbed metal precursor to form a thin film, the metal precursor including one or more halogen groups and one or more organic ligands.

Description

Technical Field

[0001] The present invention relates to a thin film deposition method and a storage device manufacturing method including the thin film deposition method. More specifically, it relates to a thin film deposition method using a metal precursor containing a halogen group and an organic ligand and a storage device manufacturing method including the thin film deposition method. Background Art

[0002] In the semiconductor industry, deposition is a crucial step in depositing materials onto substrates. As electronic devices continue to shrink in size and increase in integration, feature aspect ratios are increasing. Consequently, processes with excellent step coverage are attracting attention, particularly atomic layer deposition (ALD).

[0003] Currently, DRAM in the memory sector and logic memory in the non-memory sector have reached their physical limits, making it difficult to form uniform thin films even using ALD. To overcome this limitation, there is a growing need to form thin films of uniform thickness on three-dimensional structures with very high aspect ratios.

[0004] Metal halides are widely used as precursors for forming metal thin films due to their low cost, good reactivity, and thermal stability. However, since metal halides are generally solid at room temperature, they are difficult to use in deposition processes. Metal halides also require high-temperature deposition processes, and thickness control is difficult due to the undesirable etching caused by the halide ions produced as byproducts.

[0005] Organometallic compounds are the most commonly used ALD precursors due to their non-toxicity and high volatility. Ideally, ALD forms a monoatomic layer through a self-limiting surface reaction during repeated cycles of precursor supply and removal. However, in actual ALD processes using organometallic compounds, achieving a self-limiting surface reaction is difficult due to the formation of multiple layers caused by intermolecular forces and the decomposition of thermally unstable organic ligands.

[0006] Therefore, generally speaking, it takes a long time to optimize the process conditions in order to solve these problems. Summary of the Invention Technical issues

[0007] An object of the present invention is to provide a thin film deposition method and a storage device manufacturing method including the thin film deposition method, wherein the thin film deposition method realizes an ideal ALD by using a mixed precursor containing at least one halogen group and one organic ligand, thereby making thickness control easy and significantly improving step coverage.

[0008] Another object of the present invention is to provide a thin film deposition method that can minimize contamination within the thin film caused by halogen, and a memory device manufacturing method including the thin film deposition method.

[0009] Other objects of the present invention will become clearer from the detailed description below. Problem Solutions

[0010] The thin film deposition method of the present invention includes: a step of supplying a metal precursor into a cavity in which a substrate is placed to adsorb the metal precursor on the substrate; a step of purifying the interior of the cavity; and a step of supplying a reactant into the cavity to cause the reactant to react with the adsorbed metal precursor to form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

[0011] The metal precursor can be represented by the following chemical formula 1: <Chemical Formula 1> Al(L) n (X) 3-n In Chemical Formula 1, n is independently selected from integers 1 and 2, X is selected from the halogen elements, L are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0012] The metal precursor can be represented by the following chemical formula 2: <Chemical Formula 2> Ti(L) n (X) 4-n In Chemical Formula 2, n is independently selected from integers 1 to 3, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0013] The metal precursor can be represented by the following chemical formulas 3 to 5: <Chemical Formula 3> <Chemical Formula 4> <Chemical Formula 5> In Chemical Formulas 3 to 5, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group, or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms, and X is selected from a halogen element. L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

[0014] The metal precursor can be represented by the following chemical formula 6: <Chemical Formula 6> Nb(L) n (X) 5-n In Chemical Formula 6, n is independently selected from integers 1 to 4, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0015] The metal precursor can be represented by the following chemical formulas 7 to 9: <Chemical Formula 7> <Chemical Formula 8> <Chemical Formula 9> In Chemical Formulas 7 to 9, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group, or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms, and X is selected from a halogen element. L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

[0016] The metal precursor may be represented by the following chemical formula 10: <Chemical Formula 10> Ta(L) n (X) 5-n In Chemical Formula 10, each n is selected from integers 1 to 4. X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0017] The method can be carried out at 50°C to 700°C.

[0018] The thin film may be one of a metal film, a metal oxide, a metal nitride or a metal sulfide.

[0019] The method for manufacturing a volatile memory device of the present invention may include the thin film deposition method.

[0020] The method for manufacturing the non-volatile memory device of the present invention may include the thin film deposition method. Effects of the Invention

[0021] According to the embodiments of the present invention, a thin film with good step coverage can be formed. In particular, the deposition rate is kept constant, so that the thickness of the thin film is easily controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1FIG. 1 is a diagram schematically showing a supply cycle according to an embodiment of the present invention.

[0023] Figure 2 Schematic diagram showing the adsorption process of the metal precursor according to an embodiment of the present invention.

[0024] Figure 3 Schematic diagram showing the adsorption process of the metal precursor within a three-dimensional structure such as a hole, a groove, or a gap formed on a substrate according to an embodiment of the present invention.

[0025] Figure 4 It is a graph showing the basic characteristics of ALD and a comparison of the growth rates under the conditions of increasing the amount of tantalum chloride input in Examples of the present invention and Comparative Examples.

[0026] Figure 5 FIG. 1 is a diagram schematically showing a supply cycle in an experiment for confirming a self-etching phenomenon according to an embodiment of the present invention.

[0027] Figure 6 Results of confirming step coverage by depositing a niobium oxide film on a patterned wafer according to an embodiment of the present invention are shown. DETAILED DESCRIPTION

[0028] Hereinafter, the present invention will be described in combination with Examples 1 to 6. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below.

[0029] Figure 1 This diagram schematically illustrates a supply cycle according to an embodiment of the present invention. A substrate is loaded into a process chamber, and subsequent ALD process conditions are adjusted. The process conditions may include the temperature of the substrate or process chamber, the pressure within the process chamber, and the gas flow rate. The temperature ranges from 50°C to 700°C.

[0030] The substrate is exposed to the metal precursor supplied into the chamber, and the metal precursor is adsorbed onto the surface of the substrate. In this case, the metal precursor is supplied at a temperature of 50° C. to 700° C.

[0031] Specifically, the metal precursor can be represented by the following chemical formula 1: <Chemical Formula 1> Al(L) n (X) 3-n In Chemical Formula 1, n is independently selected from integers 1 and 2, X is selected from the halogen elements, L are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0032] In addition, the metal precursor may be represented by the following Chemical Formula 2: <Chemical Formula 2> Ti(L) n (X) 4-n In Chemical Formula 2, n is independently selected from integers 1 to 3, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0033] Furthermore, the metal precursor can be represented by the following chemical formulas 3 to 5: <Chemical Formula 3> <Chemical Formula 4> <Chemical Formula 5> In Chemical Formulas 3 to 5, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group, or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms, and X is selected from a halogen element. L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

[0034] Furthermore, the metal precursor can be represented by the following chemical formula 6: <Chemical Formula 6> Nb(L) n (X) 5-n In Chemical Formula 6, n is independently selected from integers 1 to 4, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0035] Furthermore, the metal precursor can be represented by the following chemical formulas 7 to 9: <Chemical Formula 7> <Chemical Formula 8> <Chemical Formula 9> In Chemical Formulas 7 to 9, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group, or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms, and X is selected from a halogen element. L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

[0036] Furthermore, the metal precursor can be represented by the following chemical formula 10: <Chemical Formula 10> Ta(L) n (X) 5-n In Chemical Formula 10, each n is selected from integers 1 to 4. X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

[0037] The bidentate organic ligands mentioned above include ethylenediamine, bipyridine, acetylacetone, oxalate, sulfonamides, bis(dimethylphosphino)ethane, etc., but are not limited thereto.

[0038] Figure 2 The figure is a schematic diagram illustrating the adsorption process of the metal precursor according to an embodiment of the present invention. Similar to conventional metal halides, the metal precursor may generate corrosive gases and halide ions during the adsorption process. These generated halide ions may be re-adsorbed on the surface, exhibiting a self-etching effect that volatilizes the adsorbed metal precursor, which can be explained by the low deposition rate.

[0039] The metal precursor according to the embodiment of the present invention has fewer halogen ligands than conventional metal halides, thereby preventing over-etching, and large organic ligands such as cyclopentadiene inhibit halogen substitution, thereby enabling stable thin film formation.

[0040] Figure 3 Schematic diagram showing the adsorption process of the metal precursor within the three-dimensional structure such as holes, grooves, and gaps formed on the substrate according to an embodiment of the present invention.

[0041] First, the metal precursor is adsorbed at a high density onto the upper portion of the structure, generating corrosive gases and halide ions during the adsorption process. The generated halide ions are then adsorbed back onto the surface, volatilizing the adsorbed metal precursor. The volatilized metal precursor then diffuses downward through a cascade effect, acting as a second metal precursor. Finally, the downwardly diffused second metal precursor is adsorbed to form a conformal thin film (also known as a "conformal film").

[0042] Thereafter, a purge gas (eg, an inert gas such as Ar) is supplied into the chamber to exhaust unadsorbed metal precursors or by-products.

[0043] The substrate is then exposed to a reactive substance supplied into the chamber to form a thin film. The reactive substance reacts with the metal precursor layer to form a thin film, which can be a metal film, metal oxide, metal nitride, or metal sulfide. The thin film is formed at a temperature between 50°C and 700°C.

[0044] Thereafter, a purge gas (for example, an inert gas such as Ar) is supplied into the chamber to exhaust unreacted substances or by-products.

[0045] <Deposition Rate>

[0046] -Comparative Example

[0047] A niobium oxide film is formed on the silicon substrate using Cp-Nb=NtBu(DMA)2 as a precursor. The niobium oxide film is formed by the ALD process at a temperature of 250°C to 350°C and using O3 gas as the reactant.

[0048] The process of forming the niobium oxide film by the ALD process is as follows. The following process is performed as one cycle.

[0049] 1) Ar is used as a carrier gas, and the niobium precursor Cp-Nb=NtBu(DMA)2 is supplied into the reaction chamber at room temperature, and the niobium precursor is adsorbed onto the substrate.

[0050] 2) Ar gas is supplied into the reaction chamber to expel unadsorbed niobium precursor or by-products.

[0051] 3) Forming a monolayer by supplying O3 gas into the reaction chamber.

[0052] 4) Ar gas is supplied into the reaction chamber to exhaust unreacted substances or by-products.

[0053] The thickness test results of the niobium oxide film obtained by the above process show that the growth rate of the niobium oxide film obtained in each cycle of the ALD process is approximately cycle.

[0054] -Example

[0055] A niobium oxide film was formed on the silicon substrate using EtMeCp-Nb=NtBu(Cl)2 as a precursor. The niobium oxide film was formed using the ALD process at a temperature of 250°C to 350°C using O3 gas as the reactant. The niobium oxide film was formed in the same manner as the comparative example, except that the metal precursor was replaced with EtMeCp-Nb=NtBu(Cl)2.

[0056] The thickness test results of the niobium oxide film obtained by the above process show that the growth rate of the niobium oxide film obtained in each cycle of the ALD process is approximately Compared with the comparative example, it is confirmed that the growth rate of the thin film is low, and the growth rate of the thin film remains constant within a large temperature range.

[0057] Increased investment time

[0058] Figure 4 It is a graph showing the basic characteristics of ALD and a comparison of the growth rates under the conditions of increasing the amount of tantalum chloride input in Examples of the present invention and Comparative Examples.

[0059] like Figure 4 As shown in the left graph, the ideal ALD needs to saturate in each cycle of growth with input time, which means that self-limiting deposition is possible in each cycle.

[0060] like Figure 4 As shown in the right-hand graph, tantalum chloride is a compound with typical etching properties, and its growth rate tends to decrease with increasing input. The comparative example (organic ligand compound) shows a continuous increase with increasing input (growth rate increases by 18%), while the present example maintains a constant growth rate even with increasing input, demonstrating good saturation characteristics (growth rate increases by 6%). It is inferred that the constant growth rate is due to the self-limiting reaction in the precursor compound containing halogen and organic ligand, thus forming a conformal film even in a three-dimensional structure.

[0061] <Self-etching phenomenon>

[0062] Figure 5 FIG. 1 is a diagram schematically showing a supply cycle in an experiment for confirming a self-etching phenomenon according to an embodiment of the present invention.

[0063] On a Si substrate, an oxide film is formed using the metal precursor EtMeCp-Nb=NtBu(Cl)2 (represented by the following <Chemical Formula 11>, metal A) based on the embodiment and a tantalum compound EtMeCp-Ta=NtBu(Cl)2 (represented by the following <Chemical Formula 12>, metal B) having the same ligand as the metal compound of the embodiment (and the same group in the periodic table). Figure 5 As shown in the supply cycle, metal A and metal B are supplied in sequence, and then the metal oxide film is formed by the ALD process to form the oxide film. The process temperature is 320° C., and the reactant is O 3 gas. <Chemical Formula 11> <Chemical Formula 12>

[0064] Table 1 below shows the results of comparative analysis of the metal contents of the formed thin films using XPS (X-ray Photoelectron Spectroscopy).

[0065] [Table 1]

[0066] As shown in Table 1, when only EtMeCp-Nb=NtBu(Cl)2 was used for 100 cycles, the Nb% in the film was confirmed to be 24.1% (Experiment 1). When EtMeCp-Nb=NtBu(Cl)2 was supplied for the same period of time and then EtMeCp-Ta=NtBu(Cl)2 was supplied, the Nb% in the film was confirmed to decrease to 19.8%, and the Ta% in the film was confirmed to increase to 7.0% (Experiment 2). When the same process was performed with an increased supply period of the tantalum compound, the Nb% in the film was confirmed to decrease further, and the Ta% in the film was confirmed to increase further (Experiment 3).

[0067] The above results can be explained by the fact that the niobium compound adsorbed onto the surface during the precursor supply process is etched and the supplied tantalum compound is deposited. When only the niobium compound of the present invention is used, it can be inferred that self-etching occurs during the surface adsorption process.

[0068] If combined Figure 3 It shows that the second metal precursor generated by the self-etching phenomenon can diffuse downward and eventually form a conformal film.

[0069] <Step Coverage>

[0070] Figure 6 Results of confirming step coverage by depositing a niobium oxide film on a patterned wafer according to an embodiment of the present invention are shown.

[0071] -Comparative Example

[0072] The step coverage was confirmed by depositing the niobium oxide film of the comparative example on a pattern wafer with an aspect ratio of 40:1 at a process temperature of 320°C. The top thickness of the film obtained under the same process conditions was 10.35 nm, the bottom thickness was 9.12 nm, and the step coverage was 88% ( Figure 6 center left).

[0073] -Example

[0074] The step coverage was confirmed by depositing the niobium oxide film of this embodiment on a pattern wafer with an aspect ratio of 40:1 at a process temperature of 320°C. The top thickness of the film obtained under the same process conditions was 9.95 nm, the bottom thickness was 9.96 nm, and the step coverage was 100% ( Figure 6 center right).

[0075] Table 2 below shows the results based on Comparative Examples and Examples. [Table 2]

[0076] The present invention has been described in detail with reference to the embodiments, but may also include other embodiments. Accordingly, the technical concept and scope described in the following claims are not limited to the above-described embodiments.

Claims

1. A thin film deposition method, characterized in that: include: supplying a metal precursor into a cavity containing a substrate, so as to adsorb the metal precursor onto the substrate; a step of purifying the interior of the cavity; and supplying a reaction substance into the cavity so that the reaction substance reacts with the adsorbed metal precursor to form a thin film, Wherein, the metal precursor includes one or more halogen groups and one or more organic ligands.

2. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formula 1: <Chemical Formula 1> <h2 style=";text-align:left;direction:ltr">Al(L)<h2 style=";text-align:left;direction:ltr"> n <h2 style=";text-align:left;direction:ltr"> (X)<h2 style=";text-align:left;direction:ltr"> 3-n In Chemical Formula 1, n is independently selected from integers 1 and 2, X is selected from the halogen elements, L are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

3. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formula 2: <Chemical Formula 2> Ti(L) n (X) 4-n In Chemical Formula 2, n is independently selected from integers 1 to 3, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

4. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formulas 3 to 5: <Chemical Formula 3> <Chemical Formula 4> <Chemical Formula 5> In Chemical Formulas 3 to 5, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group, or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms. X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

5. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formula 6: <Chemical Formula 6> Nb(L) n (X) 5-n In Chemical Formula 6, n is independently selected from integers 1 to 4, X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

6. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formulas 7 to 9: <Chemical Formula 7> <Chemical Formula 8> <Chemical Formula 9> In Chemical Formulas 7 to 9, R1 to R5 are each independently selected from hydrogen, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and a phenyl group having 6 to 12 carbon atoms. X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms, L includes a bidentate organic ligand that binds to a N, O, P, or S element.

7. The thin film deposition method according to claim 1, wherein: The metal precursor is represented by the following chemical formula 10: <Chemical Formula 10> I(L) n (X) 5-n In Chemical Formula 10, each n is selected from integers 1 to 4. X is selected from the halogen elements, L's are the same or different and are selected from a hydrogen atom, a linear alkyl group, a branched alkyl group or a cycloalkyl group having 1 to 10 carbon atoms, a cyclopentadienyl group, a substituted alkylcyclopentadienyl group, an alkoxy group having 1 to 5 carbon atoms, an amino group having 1 to 5 carbon atoms, a dialkylamino group having 1 to 5 carbon atoms, an alkylimino group having 1 to 5 carbon atoms, an aryl group having 6 to 12 carbon atoms, and an aralkyl group having 7 to 13 carbon atoms. L includes bidentate organic ligands that bind to N, O, P, and S elements.

8. The thin film deposition method according to claim 1, wherein: The method is carried out at 50°C to 700°C.

9. The thin film deposition method according to claim 1, wherein: The thin film is one of a metal film, a metal oxide, a metal nitride or a metal sulfide.

10. A method for manufacturing a volatile memory device, characterized in that: The method comprises the thin film deposition method according to claim 1.

11. A method for manufacturing a non-volatile memory device, characterized in that: The method comprises the thin film deposition method according to claim 1.

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