Method and related equipment for improving NOR FLASH data retention capability

Abstract

The present invention relates to the field of flash memory technology, and specifically discloses a method for improving the data retention capability of NOR FLASH and related equipment, wherein the method comprises the following steps: S1, during the operation of the NOR FLASH, periodically triggering a data retention capability detection and repair operation based on a preset timing, the data retention capability detection and repair operation including: a first read, a second read, and a programming repair; during the data retention capability detection and repair operation, if a customer operation instruction is obtained, the data retention capability detection and repair operation is terminated to execute the customer operation instruction; the method realizes continuous detection and repair of the data retention capability under long-term operation of the NOR FLASH, avoids the long waiting time caused by a one-time full-chip scan after power-on in the traditional method, and can also give priority to responding to customer requests, solving the problem of customer access being blocked during the maintenance process.

Description

Technical Field

[0001] The present application relates to the field of flash memory technology, and in particular to a method for improving NOR FLASH data retention capability and related equipment. Background Art

[0002] NOR FLASH, a critical non-volatile memory, is widely used in embedded systems, automotive electronics, and industrial control, particularly in high-temperature environments and high-reliability scenarios. As electronic devices continue to demand more data storage capacity and performance, demand for NOR FLASH to ensure long-term data integrity continues to grow, driving the industry's exploration of optimized data retention capabilities. Technological development trends indicate a growing demand for integrated solutions that provide fast access and reliable storage, driving the expansion of NOR FLASH into emerging areas such as smart devices and the Internet of Things.

[0003] In the existing technology, the method of improving the data retention time of NOR FLASH mainly relies on a one-time detection and repair operation after power-on, which requires the completion of the scanning and repair process of the entire chip storage unit. As the capacity of NOR FLASH increases, the time taken for this operation is significantly extended, causing customers to wait for a long time before accessing the storage device, affecting the user experience. At the same time, the traditional method lacks a continuous monitoring mechanism. When the device is in a working state for a long time, it is impossible to guarantee data reliability in real time, increasing the risk of data loss. In addition, when performing detection and repair operations, the system cannot quickly respond to customer access instructions, especially read operations with strict response time requirements, because the operation switching process takes too much time to establish the voltage, which cannot meet the real-time access requirements. These limitations limit the applicability of NOR FLASH in high-reliability and fast-response application scenarios.

[0004] There is currently no effective technical solution to the above problems. Summary of the Invention

[0005] The purpose of this application is to provide a method and related equipment for improving the data retention capability of NOR FLASH, so as to realize continuous detection and repair of data retention capability under long-term operation of NOR FLASH, avoid the long waiting time caused by the one-time full-chip scan after power-on in the traditional method, and solve the problem of maintenance process blocking customer access.

[0006] In a first aspect, the present application provides a method for improving NOR FLASH data retention capability, the method comprising the following steps:

[0007] S1. During the operation of the NOR FLASH, a data retention capability detection and repair operation is periodically triggered based on a preset timing. The data retention capability detection and repair operation includes:

[0008] A1. Performing a first read on the NOR FLASH memory array to screen out memory cells with data 0. The first read operation conditions include applying 6V and 0V voltages to the gate and source of the operation object, respectively.

[0009] A2. Performing a second read on the memory cells with data 0 to screen out memory cells that need to be repaired. The operating conditions for the second read include applying voltages of 6V and -1V to the gate and source of the operation object, respectively.

[0010] A3. Programming and repairing the memory cell to be repaired, wherein the programming and repairing operation conditions include: applying 6V and -3V voltages to the gate and source of the operation object respectively;

[0011] S2. During the process of detecting and repairing the data retention capability, if a customer operation instruction is obtained, suspending the data retention capability detection and repair operation to execute the customer operation instruction.

[0012] The method of the present application realizes the continuous detection and repair of the data retention capability of NOR FLASH under long-term operation, and avoids the long waiting time caused by the one-time full-chip scan after power-on in the traditional method, effectively improving the data reliability of NORFLASH in long-term use, and can also give priority to responding to customer requests, solving the problem of maintenance process blocking customer access.

[0013] The method for improving the data retention capability of NOR FLASH, wherein the preset timing is calculated based on a timer built into the NOR FLASH, and the timer is reset and refreshed after the NOR FLASH is successfully powered on and each time the data retention capability detection and repair operation is completed.

[0014] Through the above design, the method of the present application realizes a reliable and stable periodic detection trigger mechanism, solves the reliability problem of preset timing calculation and management, reduces dependence on external systems, ensures the effectiveness and stability of continuous monitoring of data retention capabilities, and improves the data reliability of NOR FLASH in various application scenarios.

[0015] The method for improving the data retention capability of NOR FLASH, wherein the data retention capability detection and repair operation further includes:

[0016] A4. Read the memory cell that has been repaired by programming for a third time to determine whether the repair is successful. If the repair is not completed, determine the memory cell that failed to be repaired as a memory cell that needs to be repaired, and return to step A3. The operating conditions of the third read include: applying 6V and -1V voltages to the gate and source of the operation object, respectively.

[0017] In the method for improving the data retention capability of NOR FLASH, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0018] S21a, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type;

[0019] S22a: After the execution of the client operation instruction is completed, continue to perform the data retention capability detection and repair operation based on the current operation position and the operation type.

[0020] In the method for improving the data retention capability of NOR FLASH, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0021] S21b, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type;

[0022] S22b. After the execution of the customer operation instruction is completed, if the operation type is programming repair, continue to perform the data retention capability detection and repair operation based on the current operation position and the operation type; otherwise, end the data retention capability detection and repair operation.

[0023] In the method for improving the data retention capability of NOR FLASH, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0024] S21c, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type;

[0025] S22c: After the execution of the client operation instruction is completed, the data retention capability detection and repair operation is continued based on the preset timing trigger and the current operation position and the operation type.

[0026] The method for improving the data retention capability of NOR FLASH, wherein the preset timer is 24-72 hours.

[0027] In a second aspect, the present application further provides a device for improving NOR FLASH data retention capability, the device comprising:

[0028] The timing repair module is used to periodically trigger the detection and repair operation of data retention capability during the operation of NOR FLASH based on a preset timing. The detection and repair operation of data retention capability is performed based on the following modules:

[0029] A first reading module is configured to perform a first reading of the NOR FLASH memory array to screen out memory cells with data of 0, wherein the first reading operation condition includes: applying 6V and 0V voltages to the gate and source of the operation object, respectively;

[0030] A second reading module is configured to perform a second reading on the memory cells with data 0 to screen and obtain the memory cells that need to be repaired. The operating conditions of the second reading include: applying voltages of 6V and -1V to the gate and source of the operation object, respectively;

[0031] A programming repair module is used to perform programming repair on the memory cell that needs repair. The operating conditions of the programming repair include: applying 6V and -3V voltages to the gate and source of the operation object respectively;

[0032] The suspending and repairing module is configured to, during the process of detecting and repairing the data retention capability, if a client operation instruction is obtained, suspend the detecting and repairing operation of the data retention capability to execute the client operation instruction.

[0033] The device of the present application realizes the continuous detection and repair of the data retention capability of NOR FLASH under long-term operation, and avoids the long waiting time caused by the one-time full-chip scan after power-on in the traditional method, effectively improving the data reliability of NORFLASH in long-term use, and can also give priority to responding to customer requests, solving the problem of maintenance process blocking customer access.

[0034] In a third aspect, the present application further provides a memory chip comprising a NOR FLASH controller and a memory array, wherein the NOR FLASH controller is configured to execute the steps of the method for improving the data retention capability of the NOR FLASH as provided in the first aspect to perform data retention capability detection and repair operations on the memory cells of the memory array.

[0035] In a fourth aspect, the present application further provides an electronic device comprising the memory chip provided in the third aspect.

[0036] As can be seen from the above, the present application provides a method and related equipment for improving the data retention capability of NOR FLASH. Specifically, the method of the present application combines the periodic data retention capability detection and repair operation performed during the operation of NOR FLASH with a mechanism for terminating the operation upon receiving a customer operation instruction to give priority to executing the customer instruction, thereby realizing continuous detection and repair of the data retention capability of NOR FLASH under long-term operation, and avoiding the long waiting time caused by the one-time full-chip scan after power-on in the traditional method, effectively improving the data reliability of NOR FLASH in long-term use, and can also give priority to responding to customer requests, solving the problem of maintenance process blocking customer access, improving the real-time response capability of the device and user experience, and meeting the fast access requirements of NOR FLASH. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 Flowchart of a method for improving NOR FLASH data retention capability provided in an embodiment of the present application.

[0038] Figure 2 The flowchart of the data retention capability detection and repair operation.

[0039] Figure 3 A more detailed flowchart of the data retention capability detection and repair operations.

[0040] Figure 4 Schematic diagram of voltage application for detecting and repairing data retention capability in a conventional method.

[0041] Figure 5 Schematic diagram of voltage application for data retention capability detection and repair operations in the method of the present application.

[0042] Figure 6 A schematic diagram of the structure of a device for improving NOR FLASH data retention capability provided in an embodiment of the present application.

[0043] Reference numerals: 201, timing repair module; 202, suspension repair module; 203, first reading module; 204, second reading module; 205, programming repair module. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0045] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0046] First, please refer to Figure 1-Figure 5 Some embodiments of the present application provide a method for improving NOR FLASH data retention capability, the method comprising the following steps:

[0047] S1. During the NOR FLASH operation, the data retention capability detection and repair operation is triggered periodically based on the preset timing. The data retention capability detection and repair operation includes:

[0048] A1. Perform a first read on the NOR FLASH memory array to screen out memory cells with data 0. The first read operation conditions include: applying 6V and 0V voltages to the gate and source of the operation object, respectively.

[0049] A2. Perform a second read on the memory cells with data 0 to screen out memory cells that need to be repaired. The operating conditions for the second read include: applying 6V and -1V voltages to the gate and source of the operation object, respectively;

[0050] A3. Programming and repairing the memory cell to be repaired. The programming and repairing operation conditions include: applying 6V and -3V voltages to the gate and source of the operation object respectively;

[0051] S2. During the process of detecting and repairing the data retention capability, if a customer operation instruction is obtained, the data retention capability detection and repair operation is terminated to execute the customer operation instruction.

[0052] Specifically, step S1 refers to the process of periodically starting the data retention capability inspection and maintenance process according to a preset timing during the normal operation of NOR FLASH. It can be implemented by a built-in timer, software scheduling or hardware counter, thereby realizing continuous monitoring and maintenance of the data retention capability and overcoming the limitation of only performing a one-time inspection at power-on.

[0053] More specifically, the first read is to preliminarily identify all storage cells that store data as 0, narrow the scope for subsequent sensitive detection, and improve efficiency. The second read refers to the use of a more sensitive read voltage condition to read again on the storage cells with data 0 screened out by the first read, which is used to detect those storage cells whose charge state has drifted and whose data retention ability has decreased. These storage cells may still read 0 under standard conditions, but will read 1 under sensitive conditions, and these storage cells are regarded as storage cells that need to be repaired. Programming repair refers to applying specific programming voltage conditions to the storage cells that need to be repaired identified by the second read to restore their normal charge state. It can be implemented using the programming circuit of NOR FLASH. It is mainly to specifically repair the storage cells with reduced data retention ability so that they can stably maintain the data 0.

[0054] More specifically, step S2 means that when performing detection and repair operations, if a read or write operation request is received from an external system, the current detection and repair operation will be suspended and the customer request will be responded to first. This can be achieved by using an interrupt mechanism, state machine switching or task scheduler. Its main purpose is to ensure that NOR FLASH can respond quickly to customer operations and improve the availability of the device and user experience.

[0055] It should be noted that the operation object refers to the storage unit corresponding to the operation behavior selection.

[0056] More specifically, the method of the present application periodically triggers the background data retention detection and repair process using a preset timer. Once triggered, a standard read is first performed on the memory array to quickly identify all memory cells with data set to 0. Next, a sensitive read is performed only on these cells with data set to 0, applying specific voltage conditions to detect cells whose charge states have drifted and may result in data loss. Cells identified as requiring repair during the sensitive read are immediately programmed and repaired to restore their normal charge state. The entire detection and repair process is performed periodically during NOR FLASH operation, enabling continuous monitoring of data retention capabilities. Furthermore, to prevent background maintenance tasks from interfering with foreground client operations, the method incorporates an interrupt mechanism. If a read or write operation command is received from a client during data retention detection or repair, the current maintenance task is immediately aborted, giving priority to the client command. After the client command is executed, the background maintenance task can be resumed or restarted as needed. This mechanism ensures that NOR FLASH maintains good client responsiveness while performing data maintenance.

[0057] In addition, if Figure 4 As shown, the voltages applied to the gate for the first read, second read, and repair in the traditional method are all different, such as 6V, 7V, and 9V respectively; and the execution of the customer operation instruction must first execute the read instruction (the read, write, and erase processes must first execute data reading on the storage area to be processed). If the traditional method is executing the second read or repair, the current voltage used is higher than the normal read voltage, and it is necessary to re-establish a suitable voltage based on the charge pump to switch back to the normal read mode to execute the normal read instruction. There is a charge pump re-establishment process, and this establishment process includes a long voltage stabilization time. If the voltage cannot be stabilized within a limited time (determined by the clock frequency of the SPI interface), data reading errors may occur due to the charge pump output voltage not reaching the set value, which cannot meet the NOR In order to meet the fast access requirements of FLASH, traditional detection and repair operations cannot be exited immediately; in contrast, the method of the present application reconstructs the voltage application method of the first read, second read and programming repair in the detection and repair operations of data retention capability, so that the voltage applied to the gate of the storage cell in these operations is 6V, which is consistent with the voltage used in the normal read mode. When step S2 triggers the execution of the read instruction executed by the customer operation, there is no need to re-establish the read voltage based on the charge pump, but 6V can be directly applied to the gate of the storage cell to be read for data reading, thereby meeting the fast access requirements of NOR FLASH.

[0058] It should be noted that the -3V or -1V of the source can be quickly switched to 0V by grounding, thereby achieving fast switching of the read instruction.

[0059] The method of the present application combines periodic data retention capability detection and repair operations performed during the operation of NOR FLASH with a mechanism that suspends the operation upon receiving a customer operation instruction to give priority to executing the customer instruction. This achieves continuous detection and repair of the data retention capability of NOR FLASH during long-term operation, avoids the long waiting time caused by a one-time full-chip scan after power-on in traditional methods, effectively improves the data reliability of NOR FLASH in long-term use, and can also give priority to responding to customer requests, solving the problem of maintenance process blocking customer access, improving the real-time response capability of the device and user experience, and meeting the fast access requirements of NOR FLASH.

[0060] In some preferred embodiments, the preset timing is calculated based on a timer built into the NOR FLASH, and the timer is reset and refreshed after the NOR FLASH is powered on successfully and each time the detection and repair operation of the data retention capability is completed.

[0061] Specifically, a built-in NOR FLASH timer refers to a timing circuit or logic unit integrated within the NOR FLASH memory chip that measures time intervals. A preset timer is the length of the time interval used to trigger data retention testing and repair operations. Reset refresh clears the built-in timer's counter value to zero or resets it to its initial state, causing it to restart timing.

[0062] Specifically, by utilizing a built-in timer, the NOR FLASH chip itself can monitor the passage of time and autonomously initiate the data retention capability detection and repair process when a preset time interval is reached. This mechanism eliminates the reliance of periodic triggering on timing instructions from an external processor or system, thereby enhancing operational independence and anti-interference capabilities. The built-in timer is initialized and begins timing when the NOR FLASH is successfully powered on, ensuring that the first test is performed on schedule after the chip is ready. More importantly, after each data retention capability detection and repair operation is completed, the timer is reset and restarted. This reset mechanism ensures that each periodic test begins at a specific point in time, that is, the next preset time interval is calculated from the completion of the previous test and repair or the successful power-on of the chip, avoiding cumulative timing errors and ensuring the accuracy and stability of the periodic triggering.

[0063] Through the above design, the method of the present application realizes a reliable and stable periodic detection trigger mechanism, solves the reliability problem of preset timing calculation and management, reduces dependence on external systems, ensures the effectiveness and stability of continuous monitoring of data retention capabilities, and improves the data reliability of NOR FLASH in various application scenarios.

[0064] In some preferred embodiments, the data retention capability detection and repair operations further include:

[0065] A4. Read the memory cell that has been repaired for programming for a third time to determine whether the repair is successful. If the repair is not completed, determine the memory cell that failed the repair as a memory cell that needs to be repaired, and return to step A3. The operating conditions for the third read include: applying 6V and -1V voltages to the gate and source of the operation object, respectively.

[0066] Specifically, step A4 is a verification read performed after programming repair is performed on the memory cell. Its operating conditions are the same as the second reading conditions used to screen the memory cells that need to be repaired. It is intended to detect whether the memory cell can reliably maintain the data 0 state after programming repair. If the data read by the third read operation is still 1, it indicates that the programming repair has not successfully restored the memory cell to a stable data 0 state, and the memory cell is judged to have failed repair. These memory cells that failed to be repaired are re-marked as needing repair, and the processing flow returns to the programming repair step, and programming repair is attempted again for these cells that failed to be repaired successfully in one go. This mechanism of verification, judgment, and cyclic repair ensures that the detection of data retention capability and the repair operation can more thoroughly solve the data retention problem of the memory cell.

[0067] By combining programming repair with subsequent verification reads and iterative repair, the method of this application can effectively identify and address memory cells that are difficult to repair in one go, significantly improving the success rate and reliability of repairs and avoiding the risk of data loss due to incomplete repairs. This iterative verification and repair process makes the entire data retention enhancement solution more effective.

[0068] It should be noted that if it is determined in step A4 that the repair is successful, the data retention capability detection and repair operation are terminated.

[0069] In some preferred embodiments, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0070] S21a, suspending the detection and repair operation of the data retention capability to execute the customer's operation instruction, and recording the current operation position and operation type;

[0071] S22a: After the client operation instruction is executed, the data retention capability detection and repair operations are continued based on the current operation position and operation type.

[0072] Specifically, "suspending data retention capability detection and repair operations" refers to pausing the currently ongoing background maintenance process aimed at detecting and correcting degraded data retention capabilities of NOR FLASH memory cells, thereby prioritizing system resources for responding to external client operation requests. "Executing client operation instructions" refers to responding to and completing routine NOR FLASH memory operations initiated by external systems or users, such as reading data, writing data, and erasing blocks. "Recording the current operation location and operation type" refers to saving the specific progress information at the time the detection and repair operation was suspended when the detection and repair operation was suspended. The current operation location can refer to the address or area range of the memory cell being detected or repaired, and the operation type can refer to the current stage in the detection and repair process, such as the first read, second read, programming repair, or third read. Step S22a involves, after the client operation instruction is completed, using the previously recorded progress information to precisely resume execution of the detection and repair operation from the point where it was suspended, rather than restarting from the beginning. This recovery method based on interruption point information ensures the continuity of the detection and repair process, avoids duplication of effort, and improves efficiency. In this way, timely response to customer operations is guaranteed, and the background data retention capability detection and repair tasks are ensured to be completed continuously and effectively, thereby comprehensively improving the data reliability of NOR FLASH.

[0073] The method of the present application is combined with the basic timed trigger detection and repair and interruption mechanism. By introducing the interruption point recording and recovery mechanism, it solves the problem of how to recover effectively and flexibly after an interruption, making the entire data retention capability guarantee system more robust and efficient.

[0074] In some other embodiments, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0075] S21b, suspending the detection and repair operation of the data retention capability to execute the customer's operation instruction, and recording the current operation position and operation type;

[0076] S22b. After the execution of the customer operation instruction is completed, if the operation type is programming repair, the data retention capability detection and repair operation will continue to be performed based on the current operation position and operation type; otherwise, the data retention capability detection and repair operation will be terminated to wait for the next new data retention capability detection and repair operation based on the preset timing.

[0077] Specifically, in this embodiment, after the client instruction is executed, step S22b checks the previously recorded operation type. If the recorded operation type is programming repair, this means the system is performing a corrective write operation on the memory cell with reduced data retention. This operation has a direct impact on restoring the reliability of the memory cell. Therefore, based on the previously recorded location and type, the system resumes the remaining programming repair operations from the point of interruption to ensure the completion of the critical repair process. If the recorded operation type is not programming repair (for example, the first or second read screening), these read operations are primarily intended to identify cells requiring repair. They may involve scanning a large area of ​​the storage area and are time-consuming. In this case, the system terminates the current detection and repair cycle and does not resume read operations from the interruption point. Instead, it waits for the next pre-set time interval to restart a new detection and repair cycle. This strategy avoids immediate resumption after an interruption of a non-programming repair operation, thereby reducing unnecessary system overhead and delays and improving the response speed to subsequent client instructions. By distinguishing the operation type at the time of the interruption and adopting different recovery strategies, this solution strikes a balance between ensuring the completion of critical repair operations and optimizing system efficiency, thereby improving the practicality of the data retention detection and repair process.

[0078] In some other embodiments, the step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes:

[0079] S21c, suspending the detection and repair operation of the data retention capability to execute the customer's operation instruction, and recording the current operation position and operation type;

[0080] S22c: After the execution of the client operation instruction is completed, the data retention capability detection and repair operation is continued based on the preset timing trigger and the current operation position and operation type.

[0081] Specifically, in this embodiment, after the client operation instruction is executed, step S22c does not immediately resume the suspended detection and repair operation, but instead starts a preset timer to continue executing the unfinished data retention capability detection and repair operation based on a preset timing.

[0082] In some preferred embodiments, the preset timer is 24-72 hours.

[0083] Specifically, this range setting balances the need to promptly detect and repair data retention issues with the need to avoid system overhead and interruption risks caused by overly frequent operations. During the NOR FLASH operation, the built-in timer calculates the time interval, and when it reaches the preset range of 24-72 hours, the data retention capability detection and repair operation is triggered. By setting the trigger interval between 24 and 72 hours, it ensures that the NOR FLASH can continuously obtain data retention capability maintenance under long-term working conditions, effectively reducing the risk of data loss. At the same time, it avoids the long waiting time caused by the one-time full-chip scan in the traditional method, and optimizes the efficiency and practicality of periodic maintenance, making the periodic detection and repair mechanism based on preset timing more feasible and reliable in actual applications.

[0084] In some preferred embodiments, the preset timing is set based on the accumulated usage time of the NOR FLASH.

[0085] Specifically, the preset timing may be set according to the accumulated usage time of the NOR FLASH and a preset timing allocation table, where the timing allocation table includes a plurality of preset timings corresponding to different accumulated usage time lengths.

[0086] More specifically, since the data retention capability of NOR FLASH is generally negatively correlated with its cumulative usage time, that is, the longer the cumulative usage time, the weaker the data retention capability, which is mainly manifested in the faster power-off speed of the storage unit. Therefore, the longer the cumulative usage time of NORFLASH, the smaller the preset timing can be configured to trigger the detection and repair operations of the data retention capability, thereby further optimizing the efficiency and practicality of periodic maintenance, and making the periodic detection and repair mechanism based on preset timing more feasible and reliable in actual applications.

[0087] Second, please refer to Figure 6 Some embodiments of the present application further provide a device for improving the data retention capability of NOR FLASH, the device comprising:

[0088] The timing repair module 201 is used to periodically trigger the detection and repair of data retention capability during NOR FLASH operation based on a preset timing. The detection and repair of data retention capability are performed based on the following modules:

[0089] The first reading module 203 is used to perform a first reading of the NOR FLASH memory array to screen out memory cells with data 0. The operation conditions of the first reading include: applying 6V and 0V voltages to the gate and source of the operation object respectively;

[0090] The second reading module 204 is configured to perform a second reading on the memory cells with data 0 to screen out the memory cells that need to be repaired. The operating conditions for the second reading include: applying voltages of 6V and -1V to the gate and source of the operation object, respectively.

[0091] The programming repair module 205 is used to perform programming repair on the memory cell that needs to be repaired. The operating conditions of the programming repair include: applying 6V and -3V voltages to the gate and source of the operation object respectively;

[0092] The repair suspension module 202 is configured to, during the process of detecting and repairing the data retention capability, if a client operation instruction is obtained, suspend the detection and repairing of the data retention capability to execute the client operation instruction.

[0093] The device of the present application combines the periodic data retention capability detection and repair operation performed during the operation of NOR FLASH with a mechanism that terminates the operation upon receiving a customer operation instruction to give priority to executing the customer instruction, thereby realizing continuous detection and repair of the data retention capability of NOR FLASH under long-term operation, avoiding the long waiting time caused by the one-time full-chip scan after power-on in the traditional method, effectively improving the data reliability of NOR FLASH in long-term use, and giving priority to responding to customer requests, solving the problem of maintenance process blocking customer access, improving the real-time response capability of the device and user experience, and meeting the fast access requirements of NOR FLASH.

[0094] In some preferred embodiments, the second reading module 204 is also used to read the storage cell that has been programmed for a third time to determine whether the repair is successful. When the repair is not completed, the storage cell that failed to be repaired is determined as a storage cell that needs to be repaired, and returns to trigger the programming repair module 205 to continue programming repair. The operating conditions for the third reading include: applying 6V and -1V voltages to the gate and source of the operation object, respectively.

[0095] In a third aspect, some embodiments of the present application further provide a memory chip comprising a NOR FLASH controller and a memory array, wherein the NOR FLASH controller is configured to execute the steps of the method for improving the data retention capability of the NOR FLASH as provided in the first aspect to perform data retention capability detection and repair operations on the memory cells of the memory array.

[0096] In a fourth aspect, some embodiments of the present application further provide an electronic device comprising the memory chip provided in the third aspect.

[0097] In addition, the units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0098] Furthermore, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0099] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any actual relationship or order between these entities or operations.

[0100] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A method for improving NOR FLASH data retention capability, characterized in that: The method comprises the following steps: S1. During the operation of the NOR FLASH, a data retention capability detection and repair operation is periodically triggered based on a preset timing. The data retention capability detection and repair operation includes: A1. Performing a first read on the NOR FLASH memory array to screen out memory cells with data 0. The first read operation conditions include applying 6V and 0V voltages to the gate and source of the operation object, respectively. A2. Performing a second read on the memory cells with data 0 to screen out memory cells that need to be repaired. The operating conditions for the second read include applying voltages of 6V and -1V to the gate and source of the operation object, respectively. A3. Programming and repairing the memory cell to be repaired, wherein the programming and repairing operation conditions include: applying 6V and -3V voltages to the gate and source of the operation object respectively; S2. During the process of detecting and repairing the data retention capability, if a customer operation instruction is obtained, suspending the data retention capability detection and repair operation to execute the customer operation instruction.

2. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The preset timing is calculated based on a timer built into the NOR FLASH. The timer is reset and refreshed after the NOR FLASH is powered on successfully and after each data retention capability detection and repair operation is completed.

3. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The data retention capability detection and repair operations also include: A4. Read the memory cell that has been repaired by programming for a third time to determine whether the repair is successful. If the repair is not completed, determine the memory cell that failed to be repaired as a memory cell that needs to be repaired, and return to step A3. The operating conditions of the third read include: applying 6V and -1V voltages to the gate and source of the operation object, respectively.

4. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes: S21a, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type; S22a: After the execution of the client operation instruction is completed, continue to perform the data retention capability detection and repair operation based on the current operation position and the operation type.

5. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes: S21b, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type; S22b. After the execution of the customer operation instruction is completed, if the operation type is programming repair, continue to perform the data retention capability detection and repair operation based on the current operation position and the operation type; otherwise, end the data retention capability detection and repair operation.

6. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The step of suspending the detection and repair operation of the data retention capability to execute the client operation instruction includes: S21c, suspending the detection and repair operation of the data retention capability to execute the client operation instruction, and recording the current operation position and operation type; S22c: After the execution of the client operation instruction is completed, the data retention capability detection and repair operation is continued based on the preset timing trigger and the current operation position and the operation type.

7. The method for improving NOR FLASH data retention capability according to claim 1, wherein: The preset timing is 24-72 hours.

8. A device for improving NOR FLASH data retention capability, characterized in that: The device comprises: The timing repair module is used to periodically trigger the detection and repair operation of data retention capability during the operation of NOR FLASH based on a preset timing. The detection and repair operation of data retention capability is performed based on the following modules: A first reading module is configured to perform a first reading of the NOR FLASH memory array to screen out memory cells with data of 0, wherein the first reading operation condition includes: applying 6V and 0V voltages to the gate and source of the operation object, respectively; A second reading module is configured to perform a second reading on the memory cells with data 0 to screen and obtain the memory cells that need to be repaired. The operating conditions of the second reading include: applying voltages of 6V and -1V to the gate and source of the operation object, respectively; A programming repair module is used to perform programming repair on the memory cell that needs repair. The operating conditions of the programming repair include: applying 6V and -3V voltages to the gate and source of the operation object respectively; The suspending and repairing module is configured to, during the process of detecting and repairing the data retention capability, if a client operation instruction is obtained, suspend the detecting and repairing operation of the data retention capability to execute the client operation instruction.

9. A memory chip, characterized in that: The invention comprises a NOR FLASH controller and a storage array, wherein the NOR FLASH controller is used to execute the steps of the method for improving the data retention capability of NOR FLASH according to any one of claims 1 to 7 to detect and repair the data retention capability of the storage cells of the storage array.

10. An electronic device, characterized in that: Comprising the memory chip as claimed in claim 9.

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