Transparent conductive film with high mobility and preparation method thereof

Abstract

The invention provides a transparent conductive thin film with high mobility and a preparation method thereof, and relates to the technical field of transparent conductive thin films, the transparent conductive thin film is obtained by taking a high-purity ITO ceramic material as a target material, taking argon as working gas and carrying out thin film deposition on an MgO substrate by adopting a magnetron sputtering method; wherein the high-purity ITO ceramic material is prepared from In2O3 and SnO2 in a mass ratio of 9: 1. Compared with the prior art, the key point of obtaining the high-performance (high room temperature mobility) ITO film is that the ITO film grows along the (111) orientation in the film growth process, and the mobility is regulated and controlled through strain.

Description

Technical Field

[0001] The present invention relates to the technical field of transparent conductive films, and in particular to a transparent conductive film with high mobility and a preparation method thereof. Background Art

[0002] Transparent conductive oxide (TCO) films are essential key materials in modern optoelectronic devices, widely used in a variety of optoelectronic devices, including solar cells, liquid crystal displays, touch screens, infrared sensors, and light-emitting diodes (LEDs). With the continuous advancement of technology, the performance requirements for transparent conductive films are also increasing, especially the combined performance of their conductivity and light transmittance. High-mobility transparent conductive films have attracted much attention due to their excellent carrier transport capabilities. They can significantly improve the electrical and optical performance of devices, thereby promoting the development of optoelectronic devices.

[0003] The mobility of a material is primarily influenced by carrier scattering processes, including phonons and impurities, as well as by the concentration of grain boundaries, dislocations, and defects in the film. Furthermore, surface roughness can also scatter carriers. Currently, some research is optimizing doping concentrations to minimize the effects of ionized impurities and neutral scattering on mobility. Other research is optimizing material structure and reducing film surface roughness to reduce interface scattering, thereby achieving high-mobility TCO films. The core of this invention is the development of a method for directly preparing high-mobility transparent conductive oxide films by growing cubic ITO (a=10.118 Å) films on cubic substrates with varying lattice constants, such as YSZ (a=5.125 Å), MgO (a=4.216 Å), and STO (a=3.905 Å), utilizing strain engineering principles. These films can be used in a variety of transparent conductive devices.

[0004] In summary, as the performance requirements for transparent conductive films continue to increase, the development of transparent conductive film materials with high mobility is becoming increasingly important. This will not only improve the overall performance of optoelectronic devices, but will also promote the development of next-generation optoelectronic technologies, laying the foundation for achieving more efficient photoelectric conversion and application prospects. Summary of the Invention

[0005] In order to solve the problems of low mobility and poor conductivity of transparent conductive films in the prior art and to achieve a transparent conductive film with high mobility, high crystal quality and good optical properties, the present invention provides a high-mobility transparent conductive film and a preparation method thereof.

[0006] The present invention provides a transparent conductive film with high mobility. The transparent conductive film is obtained by depositing a thin film on an MgO substrate using a high-purity ITO ceramic material as a target material and argon as a working gas by a magnetron sputtering method. The high-purity ITO ceramic material is composed of In2O3 and SnO2 in a mass ratio of 9:1.

[0007] Compared with the prior art, the present invention provides a high-mobility transparent conductive film (ITO), the composition of which includes an MgO substrate and a tin (Sn)-doped In2O3 film. The key to obtaining high-performance (high room-temperature mobility) ITO films is to grow them along the (111) orientation during the film growth process and to control the mobility through strain. Previous studies have found that ITO films grown along the (111) orientation have higher electrical properties than ITO films grown along other orientations, and few studies have previously used strain engineering principles to control the mobility of ITO films. High-mobility ITO transparent conductive film materials were successfully prepared by utilizing the mismatch of the lattice constants of YSZ (a=5.125 Å), MgO (a=4.216 Å), STO (a=3.905Å) and ITO (a=10.118 Å). The core of the present invention is the development of a method for directly preparing high-mobility transparent conductive oxide films using strain engineering principles, and the films can be used in various transparent conductive devices.

[0008] In a possible implementation, the transparent conductive film has a thickness of 10-150 nm.

[0009] A second object of the present invention is to provide a method for preparing a transparent conductive film, the method comprising the following steps: S1, placing the MgO substrate in a sputtering chamber, evacuating the sputtering chamber and then heating the MgO substrate; S2. Introduce argon gas into the sputtering chamber to maintain the pressure and flow of argon gas in the sputtering chamber stable; S3, performing a pre-sputtering treatment on the surface of the MgO substrate by using a magnetron sputtering method; S4. Performing a formal sputtering treatment on the pre-sputtered MgO substrate by a magnetron sputtering method, and finally performing a cooling treatment to obtain a transparent conductive film.

[0010] Compared with existing technologies, the transparent conductive film produced by this invention exhibits excellent optical and electrical properties. The use of high-purity ITO ceramic as the target material and a mass ratio of In2O3 to SnO2 of 9:1 results in a high carrier concentration and mobility. Furthermore, the choice of MgO substrate is crucial, as MgO has good lattice matching, facilitating epitaxial growth of ITO films, thereby improving the film's crystalline quality and electrical properties.

[0011] In a possible embodiment, in step S1, the temperature of the heating treatment is 100-600°C.

[0012] Compared with the prior art, the present invention can effectively remove impurity gases adsorbed on the MgO substrate in this temperature range, providing a high-cleanliness substrate for the growth of ITO thin film; and this temperature range provides sufficient kinetic energy for the sputtering clusters adsorbed on the substrate surface to form a high-quality continuous film.

[0013] In one possible embodiment, in step S1, the vacuum degree of the sputtering chamber is 10 -6 Pa.

[0014] Compared with the existing technology, the high vacuum degree of the sputtering chamber (10 -6 Pa) reduces the influence of impurity gases and ensures the purity of the film.

[0015] In a possible embodiment, in step S1, the MgO substrate is placed in a sputtering chamber after being pretreated, and the pretreatment steps are as follows: the MgO substrate is placed in an ethanol solution and ultrasonically cleaned for 1-10 minutes, and then blown dry with high-purity nitrogen.

[0016] Compared with the existing technology, the cleaning method of MgO substrate can use ultrasonic cleaning to remove the particles on its surface. The cleaning result of MgO substrate will affect the uniformity, density and performance of the film. The cleaned substrate is immediately placed in the sputtering chamber and cannot be stored in the air for a long time.

[0017] In a possible implementation, in step S2, the flow rate of argon gas is 5.6-11.2 sccm, and the pressure of argon gas is 10-50 Pa.

[0018] Compared with the existing technology, the argon gas pressure is controlled to be maintained at 10-50 Pa, and the argon gas flow is 5.6-11.2sccm. Under this argon gas pressure range and flow conditions, the kinetic energy of the sputtered atomic clusters is moderate, which is beneficial to improving the crystallization quality of tin (Sn)-doped In2O3 films.

[0019] In a possible implementation, in step S3, the parameters of the pre-sputtering treatment are as follows: the power supply is 10-500 W, and the pre-sputtering time is 5-15 min.

[0020] Compared with the prior art, the present invention adopts the above-mentioned pre-sputtering treatment, which can fully remove the contaminated portion of the target surface and desorb the impurity gas on the target.

[0021] In a possible implementation, in step S4, the parameters of the formal sputtering treatment are as follows: the power supply is 10-500W, and the formal sputtering time is 30 minutes.

[0022] Compared with the existing technology, the RF power is set to 10-500W because within this power range, the sputtering rate of the target material is moderate, which is conducive to the epitaxial growth of tin (Sn)-doped In2O3 thin films.

[0023] In a possible embodiment, in step S4, the specific steps of the cooling treatment are as follows: turn off the RF power supply, first cool down to 200° C. at a rate of 50° C. / min, and then cool down naturally to room temperature.

[0024] Compared with the prior art, the present invention adopts the above-mentioned cooling treatment to reduce defects of the film caused by thermal stress during the cooling process, thereby improving the quality and stability of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Graphs showing the crystallinity and high-resolution X-ray reflectivity of the transparent conductive films prepared in Example 1, Comparative Example 1, and Comparative Example 2 of the present invention; Figure 2 The UV-visible-infrared transmittance spectra of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2 of the present invention; Figure 3 Graph showing the changes in resistivity, carrier concentration and mobility of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2 of the present invention as a function of temperature. DETAILED DESCRIPTION

[0026] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, specific embodiments of the present invention are described in detail below. It should be noted that the following embodiments are only intended to illustrate the implementation methods and typical parameters of the present invention, and are not intended to limit the parameter ranges described in the present invention. Reasonable variations derived therefrom are still within the scope of protection of the claims of the present invention.

[0027] It should be noted that the endpoints of the ranges and any values disclosed herein are not limited to the precise ranges or values, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values can be combined with each other to obtain one or more new numerical ranges, and these numerical ranges should be considered to be specifically disclosed herein.

[0028] Unless otherwise defined, all terms, symbols and other scientific terms used herein are intended to have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. In some cases, terms with conventional meanings are defined herein for the purpose of clarification or ease of reference, and such definitions herein should not be construed as indicating significant differences from conventional understandings in the art. The technical methods described or cited herein are generally well understood by those skilled in the art and are adopted by conventional methods. Unless otherwise stated, the use of commercially available kits, reagents and instruments was carried out in accordance with the protocols and parameters given by the manufacturers.

[0029] Example 1 This embodiment provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: Place the (111) oriented MgO substrate in an ethanol solution for ultrasonic cleaning for 5 minutes, and then blow dry it with a nitrogen air gun; mount the dried MgO substrate on a sample stage and place it into the sputtering chamber; S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa; turn on the heating system, increase the temperature at a rate of 50°C / min, and stabilize the temperature at 400°C; at the same time, set the argon flow rate to 8.4 sccm, and maintain the argon pressure in the sputtering chamber at 30 Pa by adjusting the exhaust valve; S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process. S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 200°C, and finally prepare a MgO transparent conductive film with an ITO film.

[0030] Example 2 This embodiment provides a high-mobility transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, a (111)-oriented MgO substrate was ultrasonically cleaned in an ethanol solution for 5 minutes, followed by drying with a nitrogen air gun. The dried MgO substrate was mounted on a heating table and placed into a sputtering chamber.

[0031] S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6The heating system was turned on with a fixed output power of 40 W. The temperature was then stabilized at 500°C. At the same time, the argon flow rate was set to 8.4 sccm, and the nitrogen pressure in the sputtering chamber was maintained at 30 Pa by adjusting the gas valve.

[0032] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially begin sputtering. Simultaneously, use a temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0033] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50℃ / min, and cool down naturally after dropping to 200℃. Finally, YSZ, MgO, and STO transparent conductive films with ITO films are prepared, and their mobility at 300 K does not change significantly.

[0034] Comparative Example 1 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: Place the (111) oriented YSZ substrate in an ethanol solution and perform ultrasonic cleaning for 5 minutes, then blow dry with a nitrogen air gun; mount the dried YSZ substrate on a sample stage and place it into the sputtering chamber; S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa; turn on the heating system, increase the temperature at a rate of 50°C / min, and stabilize the temperature at 400°C; at the same time, set the argon flow rate to 8.4 sccm, and maintain the argon pressure in the sputtering chamber at 30 Pa by adjusting the exhaust valve; S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process. S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 200°C, and finally prepare a YSZ transparent conductive film with ITO film.

[0035] Comparative Example 2 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: Place the (111) oriented STO substrate in an ethanol solution for ultrasonic cleaning for 5 minutes, and then blow dry with a nitrogen air gun; mount the dried STO substrate on a sample stage and place it into the sputtering chamber; S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa; turn on the heating system, increase the temperature at a rate of 50°C / min, and stabilize the temperature at 400°C; at the same time, set the argon flow rate to 8.4 sccm, and maintain the argon pressure in the sputtering chamber at 30 Pa by adjusting the exhaust valve; S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process. S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 200°C, and finally prepare an STO transparent conductive film with an ITO film.

[0036] Comparative Example 3 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, a (111)-oriented YSZ substrate was ultrasonically cleaned in ethanol for 5 minutes, followed by drying with a nitrogen air gun. The dried YSZ substrate was mounted on a heating table and placed into a sputtering chamber.

[0037] S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 The heating system was turned on with a fixed output power of 40 W. The temperature was then stabilized at 500°C. At the same time, the argon flow rate was set to 8.4 sccm, and the nitrogen pressure in the sputtering chamber was maintained at 30 Pa by adjusting the gas valve.

[0038] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially begin sputtering. Simultaneously, use a temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0039] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50℃ / min, and cool down naturally after dropping to 200℃. Finally, a YSZ transparent conductive film with ITO film is prepared, and its mobility at 300 K does not change significantly.

[0040] Comparative Example 4 This embodiment provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, the (111)-oriented STO substrate was ultrasonically cleaned in ethanol for 5 minutes, followed by drying with a nitrogen air gun. The dried STO substrate was mounted on a heating table and placed into the sputtering chamber.

[0041] S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 The heating system was turned on with a fixed output power of 40 W. The temperature was then stabilized at 500°C. At the same time, the argon flow rate was set to 8.4 sccm, and the nitrogen pressure in the sputtering chamber was maintained at 30 Pa by adjusting the gas valve.

[0042] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Then, set the RF power to 40W and open the heating stage baffle to officially begin sputtering. Simultaneously, use a temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0043] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50℃ / min, and cool down naturally after dropping to 200℃. Finally, an STO transparent conductive film with ITO film is prepared, and its mobility at 300 K does not change significantly.

[0044] Comparative Example 5 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, the (111) oriented MgO substrate was placed in an ethanol solution for ultrasonic cleaning for 5 minutes, and then dried using a nitrogen air gun. The dried MgO substrate was mounted on a heating table and placed into a sputtering chamber. S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa. Turn on the heating system and set the output power to 40W. The temperature is now stable at 800°C. At the same time, set the argon flow rate to 8.4 sccm and maintain the nitrogen pressure in the sputtering chamber at 30 Pa by adjusting the gas valve.

[0045] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Afterwards, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0046] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 400°C, and finally prepare a MgO transparent conductive film with an ITO film.

[0047] Comparative Example 6 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, the (111) oriented YSZ substrate was placed in an ethanol solution and ultrasonically cleaned for 5 minutes, followed by drying with a nitrogen air gun. The dried YSZ substrate was mounted on a heating table and placed in a sputtering chamber. S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa. Turn on the heating system and set the output power to 40W. The temperature is now stable at 800°C. At the same time, set the argon flow rate to 8.4 sccm and maintain the nitrogen pressure in the sputtering chamber at 30 Pa by adjusting the gas valve.

[0048] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Afterwards, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0049] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 400°C, and finally prepare a YSZ transparent conductive film with ITO film.

[0050] Comparative Example 7 This comparative example provides a transparent conductive film, which is prepared by the following preparation method: S1. Substrate cleaning: As in Example 1, the (111) oriented STO substrate was placed in an ethanol solution for ultrasonic cleaning for 5 minutes, and then dried using a nitrogen air gun. The dried STO substrate was mounted on a heating table and placed into a sputtering chamber. S2, magnetron sputtering: start the mechanical pump and molecular pump, and pump the back vacuum of the sputtering chamber to 10 −6 Pa. Turn on the heating system and set the output power to 40W. The temperature is now stable at 800°C. At the same time, set the argon flow rate to 8.4 sccm and maintain the nitrogen pressure in the sputtering chamber at 30 Pa by adjusting the gas valve.

[0051] S3. After the temperature and pressure stabilize, turn on the RF power supply and set the pre-sputtering power to 40W. With the heating stage baffle closed, perform pre-sputtering for 10 minutes. Afterwards, set the RF power to 40W and open the heating stage baffle to officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample stage in real time during the sputtering process.

[0052] S4. After sputtering for 30 minutes, turn off the RF power supply, keep the original argon gas pressure unchanged, cool down at a rate of 50°C / min, and cool down naturally to 400°C, and finally prepare an STO transparent conductive film with an ITO film.

[0053] The inventors tested the mobility of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2. The test results showed that at room temperature of 300K, the mobility of the transparent conductive film prepared in Example 1 was 55 cm 2 ·V -1 ·s -1 The mobility of the transparent conductive film prepared in Comparative Example 1 is 49 cm 2 ·V -1 ·s -1 The mobility of the transparent conductive film prepared in Comparative Example 2 is 51 cm 2 ·V -1 ·s -1 .

[0054] It can be seen from the above results that the present invention can significantly improve the mobility of the transparent conductive film by using the MgO substrate.

[0055] The inventors further tested the transparent conductive films obtained in Example 1, Comparative Example 1 and Comparative Example 2, and the test results are as follows: Figure 1 、 Figure 2 and Figure 3 As shown, Figure 1 The crystallinity and high-resolution X-ray reflectivity diagrams of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2 of the present invention are shown. From the high-resolution XRD 2θ-ω scanning diagram, it can be seen that the ITO film preferentially grows along the (111) direction, and no other impurity phases are seen.

[0056] Figure 2The UV-visible-infrared transmittance spectra of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2 of the present invention are shown in FIG. Figure 2 It can be seen that the average visible light transmittance of the transparent conductive film prepared by the present invention can reach 80%.

[0057] Figure 3 The resistivity, carrier concentration and mobility of the transparent conductive films prepared in Example 1, Comparative Example 1 and Comparative Example 2 of the present invention vary with temperature. Figure 3 It can be seen that the transparent conductive film prepared by the present invention has good electrical properties, and the average resistivity is 10 -4 Ω·cm; carrier concentration is 10 20 cm -3 ; The average migration rate is 40 cm 2 ·V -1 ·s -1 , up to 60 cm 2 ·V -1 ·s -1 .

[0058] The inventors further analyzed the transparent films prepared in Comparative Examples 5, 6, and 7, and found from the high-resolution XRD 2θ-ω scanning diagram that other impurity phases appeared, indicating that the ITO films were not single-crystal epitaxial.

[0059] From the above results, it can be seen that the impurity gas adsorbed on the MgO substrate can be effectively removed in the temperature range of the present invention, providing a high-cleanliness substrate for the growth of ITO thin film; and this temperature range provides sufficient kinetic energy for the sputtering clusters adsorbed on the substrate surface to form a high-quality continuous film.

[0060] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A transparent conductive film with high mobility, characterized in that: The transparent conductive film is obtained by depositing a thin film on an MgO substrate using a magnetron sputtering method with high-purity ITO ceramic material as a target material and argon as a working gas, wherein the high-purity ITO ceramic material is composed of In2O3 and SnO2 with a mass ratio of 9:

1.

2. A transparent conductive film according to claim 1, characterized in that: The thickness of the transparent conductive film is 10-150 nm.

3. A method for preparing a transparent conductive film according to claim 1 or 2, characterized in that: The preparation method specifically comprises the following steps: S1, placing the MgO substrate in a sputtering chamber, evacuating the sputtering chamber and then heating the MgO substrate; S2. Introduce argon gas into the sputtering chamber to maintain the pressure and flow of argon gas in the sputtering chamber stable; S3, performing a pre-sputtering treatment on the surface of the MgO substrate by using a magnetron sputtering method; S4. Performing a formal sputtering treatment on the pre-sputtered MgO substrate by a magnetron sputtering method, and finally performing a cooling treatment to obtain a transparent conductive film.

4. The preparation method according to claim 3, wherein In the step S1, the temperature of the heating treatment is 100-600°C.

5. The preparation method according to claim 3, wherein In step S1, the vacuum degree of the sputtering chamber is 10 -6 Pa.

6. The preparation method according to claim 3, wherein In the step S1, the MgO substrate is placed in a sputtering chamber after being pretreated, and the pretreatment steps are as follows: the MgO substrate is placed in an ethanol solution and ultrasonically cleaned for 1-10 minutes, and then blown dry with high-purity nitrogen.

7. The preparation method according to claim 3, wherein In step S2, the flow rate of argon gas is 5.6-11.2 sccm, and the pressure of argon gas is 10-50 Pa.

8. The preparation method according to claim 3, wherein In step S3, the parameters of the pre-sputtering treatment are as follows: the power supply is 10-500W, and the pre-sputtering time is 5-15 minutes.

9. The preparation method according to claim 3, wherein In step S4, the parameters of the formal sputtering treatment are as follows: the power supply is 10-500W, and the formal sputtering time is 30 minutes.

10. The preparation method according to claim 3, wherein In step S4, the specific steps of the cooling treatment are as follows: turn off the RF power supply, first cool down to 200° C. at a rate of 50° C. / min, and then cool down naturally to room temperature.

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