LCOS structure and forming method thereof

Abstract

The invention provides an LCOS (Liquid Crystal On Silicon) structure and a manufacturing method thereof, the LCOS structure comprises a semiconductor substrate and a glass substrate which are oppositely arranged, a first alignment layer is formed on the semiconductor substrate, and a second alignment layer is formed on the glass substrate; the first frame glue is attached to the semiconductor substrate and the glass substrate, and the first frame glue surrounds the first alignment layer, the liquid crystal layer and the second alignment layer from bottom to top; a first metal layer is formed on the surface of the semiconductor substrate, and the bottom of the first frame glue contacts and adheres to the first metal layer; the top of the first frame glue is contacted and bonded with the conductive layer. The first metal layer is directly arranged below the first frame glue, and a hydrophilic SiO2 interface is not arranged below the first frame glue any more, so that the probability of introducing water vapor is blocked, and the water vapor is prevented from invading the liquid crystal layer; the first metal layer can be formed in the same process as a metal layer on a semiconductor substrate manufacturing process, and an additional metal layer forming process is not added. The wafer cost and the packaging cost are not increased, and the moisture resistance of the LCOS structure is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to an LCOS structure and a forming method thereof. Background Art

[0002] The LCOS (Liquid Crystal on Silicon) structure is a new type of reflective projection display device that uses semiconductor silicon technology to control liquid crystals to "project" color images. The LCOS structure boasts high light efficiency, a compact size, a high aperture ratio, and mature manufacturing technology. It easily achieves high resolution and full color expression. These advantages make the LCOS structure highly advantageous in large-screen display applications.

[0003] like Figure 1 As shown, the LCOS structure includes two opposing alignment layers (01 and 02), with a liquid crystal layer (04) and a sealant (03) formed between them. The sealant (03) surrounds the liquid crystal layer (04). The process used to form these layers is a functional nanostructured layer. These layers are porous, allowing moisture to easily penetrate or pass through them. A secondary protective process is often used in the industry to block this. The alignment layers (01 and 02) are made of SiO2, and the sealant (03) has good adhesion to the SiO2 surface. Both the bottom and top surfaces of the sealant (03) are hydrophilic SiO2 interfaces, which easily introduce moisture, thus affecting the performance of the liquid crystal layer (04). Summary of the Invention

[0004] The present invention aims to provide an LCOS structure and its fabrication method, in which a first metal layer is directly beneath the first sealant. This eliminates the need for a hydrophilic SiO2 interface beneath the first sealant, thereby blocking the introduction of moisture and preventing it from invading the liquid crystal layer. Furthermore, this first metal layer can be formed in the same process as the metal layer on the semiconductor substrate, eliminating the need for an additional metal layer formation step. This process improves the LCOS structure's resistance to moisture without increasing wafer and packaging costs.

[0005] The present invention provides an LCOS structure, comprising:

[0006] A semiconductor substrate and a glass substrate are arranged opposite to each other, a first alignment layer is formed on a surface of the semiconductor substrate facing the glass substrate, and a conductive layer and a second alignment layer are sequentially formed on a side of the glass substrate facing the semiconductor substrate; a liquid crystal layer is formed between the first alignment layer and the second alignment layer;

[0007] a first sealant, wherein the first sealant is bonded to the semiconductor base and the glass substrate, and the first sealant surrounds the first alignment layer, the liquid crystal layer, and the second alignment layer from bottom to top;

[0008] A first metal layer is formed on the surface of the semiconductor substrate at a position corresponding to the first sealant. The bottom of the first sealant contacts and is bonded to the first metal layer; the top of the first sealant contacts and is bonded to the conductive layer.

[0009] Furthermore, the semiconductor base includes a substrate and a dielectric layer located on the substrate, and the first metal layer is located on the surface of the dielectric layer.

[0010] Furthermore, a plurality of regularly arranged pixel areas are formed in the semiconductor substrate, a plurality of pixel electrodes and a plurality of wiring metal layers are formed in the dielectric layer, and the first metal layer, the pixel electrodes and the wiring metal layer can be formed in the same metal layer manufacturing process.

[0011] Furthermore, a passivation layer is formed on the surface of the semiconductor substrate, and the passivation layer covers the pixel electrode, the wiring metal layer and a portion of the first metal layer; and the first alignment layer is formed on the surface of the passivation layer.

[0012] Furthermore, a second sealant containing supporting balls is provided at the peripheral edge between the semiconductor substrate and the glass substrate, and the second sealant is located on a side of the first sealant away from the liquid crystal layer;

[0013] A second metal layer is formed on the surface of the semiconductor substrate directly below the second sealant, and the bottom of the second sealant contacts and adheres to the second metal layer.

[0014] Furthermore, the second metal layer and the first metal layer can be formed in the same metal layer manufacturing process.

[0015] Furthermore, the first sealant contains hydroxyl groups, and the content of the hydroxyl groups in each gram of the first sealant is less than 0.1 mol, that is, the hydroxyl content is less than 0.1 mol / g.

[0016] Furthermore, the material of the first alignment layer and the second alignment layer includes: SiO2 or polyimide.

[0017] Furthermore, the material of the first metal layer includes at least one of aluminum, tungsten, titanium, titanium tungsten, titanium nitride, gold and nickel.

[0018] The present invention also provides a method for forming an LCOS structure, comprising:

[0019] Providing a semiconductor substrate, wherein a first alignment layer and a first metal layer are formed on the surface of the semiconductor substrate;

[0020] Providing a glass substrate, wherein a conductive layer and a second alignment layer are sequentially formed on the surface of the glass substrate;

[0021] forming a first sealant, wherein the first sealant is used to bond the semiconductor substrate and the glass substrate, and the bottom of the first sealant contacts and adheres to the first metal layer;

[0022] forming a liquid crystal layer by injecting liquid crystal into the cavity surrounded by the first sealant on the semiconductor substrate, thereby forming the liquid crystal layer in the first sealant;

[0023] The glass substrate and the semiconductor substrate are bonded together in a vacuum, and the side of the glass substrate on which the second alignment layer is formed is downwardly covered on the first sealant and the liquid crystal layer and fixed together with the semiconductor substrate; the first sealant surrounds the first alignment layer, the liquid crystal layer and the second alignment layer from bottom to top, and the top of the first sealant contacts and adheres to the conductive layer.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The present invention provides an LCOS structure and a manufacturing method thereof, comprising: a semiconductor substrate and a glass substrate disposed opposite each other; a first alignment layer formed on the surface of the semiconductor substrate facing the glass substrate; and a conductive layer and a second alignment layer formed in sequence on the surface of the glass substrate facing the semiconductor substrate; a liquid crystal layer formed between the first and second alignment layers; a first sealant bonded to the semiconductor substrate and the glass substrate, the first sealant surrounding the first alignment layer, the liquid crystal layer, and the second alignment layer from bottom to top; a first metal layer formed on the surface of the semiconductor substrate corresponding to the first sealant, the bottom of the first sealant contacting and bonding with the first metal layer; and the top of the first sealant contacting and bonding with the conductive layer. In the present invention, the first metal layer is directly below the first sealant, eliminating the hydrophilic SiO2 interface below the first sealant, thereby blocking the introduction of moisture and preventing moisture from invading the liquid crystal layer. Furthermore, the first metal layer can be formed in the same process as the metal layer formed on the semiconductor substrate, eliminating the need for an additional metal layer formation step. This method improves the moisture resistance of the LCOS structure without increasing wafer and packaging costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a partial schematic diagram of an LCOS structure before improvement.

[0027] Figure 2 A schematic diagram of an LCOS structure according to an embodiment of the present invention.

[0028] The accompanying drawings are numerals as follows:

[0029] 01- Alignment layer 1; 02- Alignment layer 2; 03- Frame glue; 04- Liquid crystal layer;

[0030] 10 - substrate; 20 - dielectric layer; 31 - first metal layer; 32 - pixel electrode; 33 - second metal layer; 34 - support ball; 41 - first frame glue; 42 - second frame glue; 51 - first alignment layer; 52 - second alignment layer; 60 - liquid crystal layer; 70 - conductive layer; 80 - glass substrate. DETAILED DESCRIPTION

[0031] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are not to exact scale, and are only used for the purpose of conveniently and clearly illustrating the embodiments of the present invention.

[0032] For ease of description, some embodiments of the present application may use spatially relative terms such as "above," "below," "top," "below," etc. to describe the relationship between one element or component and another (or other) elements or components as shown in the various figures of the embodiments. It should be understood that, in addition to the orientations described in the figures, the spatially relative terms are also intended to include different orientations of the device in use or operation. For example, if the device in the figures is turned over, the elements or components described as being "below" or "beneath" other elements or components will subsequently be positioned as being "above" or "above" other elements or components. The terms "first," "second," etc., hereinafter, are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological sequence. It is to be understood that, where appropriate, these terms used in this manner are interchangeable.

[0033] The embodiment of the present invention provides an LCOS structure, such as Figure 2 As shown, including:

[0034] A semiconductor substrate and a glass substrate 80 are disposed opposite each other. The semiconductor substrate includes a substrate 10 and a dielectric layer 20 located on the substrate 10. A first alignment layer 51 is formed on the surface of the semiconductor substrate facing the glass substrate 80. A conductive layer 70 and a second alignment layer 52 are sequentially formed on the side of the glass substrate 80 facing the semiconductor substrate. A liquid crystal layer 60 is formed between the first alignment layer 51 and the second alignment layer 52.

[0035] A first sealant 41 is provided to adhere the semiconductor substrate and the glass substrate 80 . The first sealant 41 surrounds the first alignment layer 51 , the liquid crystal layer 60 , and the second alignment layer 52 from bottom to top.

[0036] A first metal layer 31 is formed on the surface of the semiconductor substrate at a position corresponding to the first sealant 41 . The bottom of the first sealant 41 contacts and adheres to the first metal layer 31 ; the top of the first sealant 41 contacts and adheres to the conductive layer 70 .

[0037] Specifically, the semiconductor substrate may be a wafer-level substrate, and the first metal layer 31 is located on the surface of the dielectric layer 20. A plurality of regularly arranged pixel areas are formed in the semiconductor substrate. A plurality of pixel electrodes 32 and a plurality of wiring metal layers are formed in the dielectric layer 20; the first metal layer 31, the pixel electrode 32, and the wiring metal layer can be formed in the same metal layer manufacturing process. A passivation layer is also formed on the surface of the semiconductor substrate, and the passivation layer covers the pixel electrode 32, the wiring metal layer, and a portion of the first metal layer 31. The first alignment layer 51 is formed on the surface of the passivation layer. The material of the first metal layer 31 includes: at least one of aluminum, tungsten, titanium, titanium tungsten, titanium nitride, gold, and nickel.

[0038] The first sealant 41 contains hydroxyl groups, and the hydroxyl content per gram of the first sealant is less than 0.1 mol, or less than 0.1 mol / g. This hydroxyl content in the first sealant further enhances the LCOS structure's resistance to moisture. The first sealant is an adhesive, and most adhesives incorporate high concentrations of hydroxyl groups to improve bonding strength to SiO2. Materials with high hydroxyl concentrations readily absorb moisture because hydroxyl groups (-OH) are hydrophilic groups that can form hydrogen bonds with water molecules, increasing the material's water absorption. This property can be advantageous in some applications, but if moisture resistance is required, alternative materials, moisture-proofing agents, or new designs may be necessary to reduce water absorption. A hydroxyl group, also known as a hydroxyl group (-OH), is a chemical group consisting of an oxygen atom covalently bonded to a hydrogen atom, sometimes also called an alcohol functional group. For adhesives used for metal interface adhesion, the hydroxyl content should be low, typically below 0.1 mol / g.

[0039] A second sealant 42 containing support balls 34 may be positioned around the perimeter of the semiconductor substrate and the glass substrate 80. A second metal layer 33 is formed on the surface of the semiconductor substrate directly below the second sealant 42. This second metal layer 33 and the first metal layer 31 may be formed using the same metal layer fabrication process. The bottom of the second sealant 42 contacts and adheres to the second metal layer 33. The second sealant 42 is used to better control the uniformity of the cell thickness. The second sealant 42 is located on the side of the first sealant 41 away from the liquid crystal layer 60. The support balls 34 provide support and determine the height of the gap between the semiconductor substrate and the glass substrate 80 perpendicular to the semiconductor substrate. Circuitry may be provided in the semiconductor substrate directly below the first sealant 41. The glass substrate 80 may be a wafer-level substrate.

[0040] The conductive layer 70 is preferably made of ITO (indium tin oxide). A pixel electrode 32 is formed in the pixel area. This applies a voltage to one end of the liquid crystal layer 60. This voltage allows the liquid crystal layer 60 to adjust the polarization conversion rate based on the voltage applied by the pixel electrode 32, thereby controlling the polarization state ratio of the reflected light passing through the liquid crystal layer 60. This, combined with the optical engine design, enables grayscale modulation of the display. The pixel electrode 32 has high reflectivity and is made of, for example, aluminum.

[0041] The second alignment layer 52 is disposed opposite the first alignment layer 51, and the liquid crystal layer 60 is disposed between the first alignment layer 51 and the second alignment layer 52. The first alignment layer 51 and the second alignment layer 52 are made of materials including SiO2 or polyimide. The liquid crystal layer 60 comprises liquid crystal molecules aligned by the first alignment layer 51 and the second alignment layer 52, and twisted according to the electric field generated between the pixel electrode 32 and the conductive layer 70 (common electrode layer). This means that the liquid crystal layer 60 can adjust the polarization light conversion rate based on the applied voltage provided by the pixel electrode 32 and the applied voltage (driving voltage) provided by the conductive layer 70, thereby controlling the polarization state ratio of the reflected light passing therethrough. Furthermore, in conjunction with the optical engine design, this can achieve grayscale modulation of the display screen. The first alignment layer 51 and the second alignment layer 52 may have respective rubbing directions, and each liquid crystal molecule in the liquid crystal layer has a beta angle and a twist angle. The beta angle is related to the rubbing direction of the second alignment layer 52 and the horizontal direction of the semiconductor substrate, and the twist angle is related to the rubbing direction of the first alignment layer 51 and the second alignment layer 52.

[0042] An embodiment of the present invention further provides a method for manufacturing an LCOS structure, comprising:

[0043] S1, providing a semiconductor substrate, with a first alignment layer 51 and a first metal layer 31 formed on the surface of the semiconductor substrate;

[0044] S2, providing a glass substrate 80, on the surface of which a conductive layer 70 and a second alignment layer 52 are sequentially formed;

[0045] S3, forming a first sealant 41, the first sealant 41 is used to bond the semiconductor substrate and the glass substrate 80, and the bottom of the first sealant 41 contacts and adheres to the first metal layer 31;

[0046] S4, forming a liquid crystal layer 60, injecting liquid crystal into the cavity surrounded by the first sealant 41 on the semiconductor substrate, thereby forming the liquid crystal layer 60 in the first sealant 41;

[0047] S5. Lay the glass substrate 80 and the semiconductor substrate together in a vacuum. Place the side of the glass substrate 80 with the second alignment layer 52 downwardly over the first sealant 41 and the liquid crystal layer 60 and fix them together with the semiconductor substrate. The first sealant 41 surrounds the first alignment layer 51, the liquid crystal layer 60, and the second alignment layer 52 from bottom to top, and the top of the first sealant 41 contacts and adheres to the conductive layer 70.

[0048] Specifically, a semiconductor substrate is provided, on which a plurality of regularly arranged pixel regions are formed; the pixel regions include pixel structures and corresponding circuits; and a first alignment layer 51 is formed on a surface of the semiconductor substrate facing the glass substrate 80. The first alignment layer 51 is coated on the semiconductor substrate, pre-baked, and fully baked, and then the first alignment layer 51 is rubbed.

[0049] A glass substrate 80 is provided. A conductive layer 70 and a second alignment layer 52 are sequentially formed on the surface of the glass substrate 80 facing the semiconductor substrate. The conductive layer 70 can be formed by a sputtering process or a coating process. The second alignment layer 52 is coated on the surface of the conductive layer 70 on the glass substrate 80, pre-baked, and fully baked. The second alignment layer 52 is then rubbed.

[0050] The first alignment layer 51 and the second alignment layer 52 can be carried out simultaneously. The first alignment layer 51 and the second alignment layer 52 are formed by coating PI (polyimide) alignment liquid and a friction process as liquid crystal alignment layers. Exemplarily, the surface of the semiconductor substrate and the surface of the conductive layer 70 on the glass substrate 80 are dipped in PI alignment liquid, placed on a spin coater and spun at a certain speed for a period of time (for example, 60s to 100s) to evenly spin-coat the PI alignment liquid. The two substrates (semiconductor substrate and glass substrate 80) spun with PI alignment liquid are placed on a heating table for preheating. After the preheating is completed, the temperature is adjusted to a preset temperature (for example, 200°C to 250°C) for curing. After the curing is completed, wait for the temperature to drop to room temperature and take out. The semiconductor substrate is fixed at the designated position of the liquid crystal alignment friction machine, and the distance between the friction cylinder and the substrate to be rubbed is adjusted. After adjusting the distance, the rotation speed of the friction cylinder is adjusted (for example, between 2000 rpm and 2500 rpm). Finally, the friction cylinder is quickly passed over the PI alignment layer to complete the alignment (orientation); similarly, the PI alignment layer of the glass substrate 80 is aligned to form a first alignment layer 51 and a second alignment layer 52.

[0051] A first sealant 41 is formed. The first sealant 41 is used to bond the semiconductor substrate to the glass substrate 80 and does not contain support balls. Since the first sealant 41 does not contain support balls, it does not damage the circuitry beneath it. Therefore, circuitry can be formed in the semiconductor substrate directly beneath the first sealant 41, improving chip area utilization and reducing the size of a single LCOS chip. This allows for the production of more LCOS chips on the same LCOS structure (wafer), reducing the cost of each LCOS chip. The material of the first sealant 41 is a paste or liquid before UV curing. Therefore, hard support balls 34 are required for support. This creates a space along the thickness direction between the semiconductor substrate and the glass substrate 80, allowing for the formation of the liquid crystal layer 60 within the first sealant 41 and roughly determining the thickness (cell thickness) of the liquid crystal layer 60.

[0052] To form the liquid crystal layer 60, an ODF (drop-through) injection method can be used to inject the liquid crystal into the cavity enclosed by the first sealant 41 on the semiconductor substrate, thereby forming the liquid crystal layer 60 within the first sealant 41. Specifically, a liquid crystal dropper can be used to drip the liquid crystal through a fluid syringe after pre-baking the solid liquid crystal. The fluid syringe can be wrapped with an external heating resistor to ensure that the temperature of the liquid crystal syringe can be controlled. The control temperature range of the liquid crystal is between the melting point and the freezing point of the solid liquid crystal, so that the molten liquid crystal can flow easily within the fluid syringe. The liquid crystal can be a high-refractive-index liquid crystal.

[0053] The glass substrate 80 is bonded to the semiconductor substrate in a vacuum chamber. The side of the glass substrate 80 with the second alignment layer 52 facing downward (facing the liquid crystal layer) is placed over the first sealant 41 and the liquid crystal layer 60, securing the semiconductor substrate. The first sealant 41 surrounds the first alignment layer 51, the liquid crystal layer 60, and the second alignment layer 52 from bottom to top. The first sealant 41 secures the semiconductor substrate and the glass substrate 80 together. The first sealant 41 can be made of a UV-curable material, a time / temperature-curable material, or a photo-patternable material.

[0054] The curing process of the first frame glue 41 can be cured by ultraviolet light irradiation combined with heat curing. For example, the UV light curing treatment can be carried out in a UV curing oven for 3 minutes to 5 minutes, and then enter the infrared heating oven and cure at 100°C to 115°C for 25 minutes to 35 minutes. The second frame glue 42 contains support balls 34. The presence of the second frame glue 42 ensures that the support balls 34 are supported all around during the thermal curing process, thereby preventing the glass substrate 80 from tilting relative to the semiconductor substrate, resulting in uneven box thickness of each LCOS chip formed. The second frame glue 42 is used to better control the uniformity of the box thickness. During the bonding process of the semiconductor substrate and the glass substrate 80, alignment marks can be used for box alignment. The LCOS structure (LCOS wafer) is cut to form several single LCOS chips. The LCOS wafer layer structure design of the present invention prevents moisture from invading the liquid crystal layer. The process and concept of the present invention can be used for the manufacture of micro displays or image sensors.

[0055] The LCOS structure of this embodiment can be made into various high-definition and high-brightness projectors, light modulators, 3D glasses and head-mounted displays. It can also be combined with mobile phones, computers, satellite receivers, cable and network set-top boxes, cameras, DVDs and other electronic imaging devices to produce integrated products, which has great practical significance.

[0056] In summary, the present invention provides an LCOS structure and a method for fabricating the same, comprising: a semiconductor substrate and a glass substrate disposed opposite each other; a first alignment layer formed on the surface of the semiconductor substrate facing the glass substrate; and a conductive layer and a second alignment layer formed in sequence on the surface of the glass substrate facing the semiconductor substrate; a liquid crystal layer formed between the first and second alignment layers; a first sealant bonded to the semiconductor substrate and the glass substrate, the first sealant surrounding the first alignment layer, the liquid crystal layer, and the second alignment layer from bottom to top; a first metal layer formed on the surface of the semiconductor substrate corresponding to the first sealant; the bottom of the first sealant contacting and bonding with the first metal layer; and the top of the first sealant contacting and bonding with the conductive layer. In the present invention, the first metal layer is directly below the first sealant, eliminating the hydrophilic SiO2 interface below the first sealant, thereby blocking the introduction of moisture and preventing moisture from invading the liquid crystal layer. Furthermore, this first metal layer can be formed in the same process as the metal layer formed on the semiconductor substrate, eliminating the need for an additional metal layer formation step. This method improves the moisture resistance of the LCOS structure without increasing wafer and packaging costs.

[0057] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Reference can be made to the common and similar parts between the various embodiments. The methods disclosed in the embodiments are described briefly because they correspond to the devices disclosed in the embodiments. For relevant details, refer to the method description.

[0058] The above description is only a description of the preferred embodiment of the present invention, and does not limit the scope of the rights of the present invention. Any person skilled in the art can make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the scope of protection of the technical solution of the present invention.

Claims

1. An LCOS structure, characterized in that: include: A semiconductor substrate and a glass substrate are arranged opposite to each other, a first alignment layer is formed on a surface of the semiconductor substrate facing the glass substrate, and a conductive layer and a second alignment layer are sequentially formed on a side of the glass substrate facing the semiconductor substrate; a liquid crystal layer is formed between the first alignment layer and the second alignment layer; a first sealant, wherein the first sealant is bonded to the semiconductor base and the glass substrate, and the first sealant surrounds the first alignment layer, the liquid crystal layer, and the second alignment layer from bottom to top; A first metal layer is formed on the surface of the semiconductor substrate at a position corresponding to the first sealant, and the bottom of the first sealant contacts and adheres to the first metal layer; The top of the first sealant contacts and adheres to the conductive layer.

2. The LCOS structure according to claim 1, wherein: The semiconductor base comprises a substrate and a dielectric layer located on the substrate, and the first metal layer is located on the surface of the dielectric layer.

3. The LCOS structure according to claim 2, wherein: A plurality of regularly arranged pixel areas are formed in the semiconductor substrate, a plurality of pixel electrodes and a plurality of wiring metal layers are formed in the dielectric layer, and the first metal layer, the pixel electrodes and the wiring metal layer can be formed in the same metal layer manufacturing process.

4. The LCOS structure according to claim 3, wherein: A passivation layer is further formed on the surface of the semiconductor substrate, and the passivation layer covers the pixel electrode, the wiring metal layer and a portion of the first metal layer; and the first alignment layer is formed on the surface of the passivation layer.

5. The LCOS structure according to claim 1, wherein: A second sealant containing supporting balls is further provided at the peripheral edge between the semiconductor substrate and the glass substrate, and the second sealant is located on a side of the first sealant away from the liquid crystal layer; a second metal layer is formed on the surface of the semiconductor substrate directly below the second sealant, and the bottom of the second sealant is in contact with and bonded to the second metal layer.

6. The LCOS structure according to claim 5, wherein: The second metal layer and the first metal layer can be formed in the same metal layer manufacturing process.

7. The LCOS structure according to claim 1, wherein: The first sealant contains hydroxyl groups, and the content of the hydroxyl groups in each gram of the first sealant is less than 0.1 mol, that is, the hydroxyl content is less than 0.1 mol / g.

8. The LCOS structure according to claim 1, wherein: The materials of the first alignment layer and the second alignment layer include SiO2 or polyimide.

9. The LCOS structure according to claim 1, wherein: The material of the first metal layer includes at least one of aluminum, tungsten, titanium, titanium tungsten, titanium nitride, gold and nickel.

10. A method for forming an LCOS structure, characterized in that: include: Providing a semiconductor substrate, wherein a first alignment layer and a first metal layer are formed on the surface of the semiconductor substrate; Providing a glass substrate, wherein a conductive layer and a second alignment layer are sequentially formed on the surface of the glass substrate; forming a first sealant, wherein the first sealant is used to bond the semiconductor substrate and the glass substrate, and the bottom of the first sealant contacts and adheres to the first metal layer; forming a liquid crystal layer by injecting liquid crystal into the cavity surrounded by the first sealant on the semiconductor substrate, thereby forming the liquid crystal layer in the first sealant; The glass substrate and the semiconductor substrate are bonded together in a vacuum, and the side of the glass substrate on which the second alignment layer is formed is downwardly covered on the first sealant and the liquid crystal layer and fixed together with the semiconductor substrate; the first sealant surrounds the first alignment layer, the liquid crystal layer and the second alignment layer from bottom to top, and the top of the first sealant contacts and adheres to the conductive layer.

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