Glass substrate laser TGV processing device

Abstract

The invention discloses a glass substrate laser TGV processing device, and the key points of the technical scheme are that the glass substrate laser TGV processing device comprises a laser emitting device used for emitting and outputting pulse femtosecond laser and forming a micropore modification area on a glass substrate; the laser feedback device is used for detecting and feeding back whether the output laser is consistent with the required processing requirement or not; the displacement table is used for bearing the glass substrate, driving the glass substrate to move and forming an array micropore modification area on the glass substrate in cooperation with the laser emitting device; the modification detection device is used for scanning the glass substrate in a full range and sending an image to an external computer; the ultrasonic etching device is used for etching the processed glass substrate by using etching liquid, so that glass substrate micropores are formed in the modified area; and the etching monitoring device is used for monitoring the progress of the etching reaction. The method has the advantages of high etching efficiency and good precision effect.

Description

Technical Field

[0001] The present invention relates to the field of TGV technology, and more particularly to a glass substrate laser TGV processing device. Background Art

[0002] With the development of 5G communications, artificial intelligence, and high-performance computing, traditional silicon-based interposers are struggling to meet the demands of high-frequency signal transmission due to high dielectric loss and high cost. Glass-based substrates (TGVs) offer a promising alternative due to their low dielectric constant, high mechanical stability, and low cost (one-eighth the cost of silicon-based substrates).

[0003] Laser-induced deep etching (LIDE) technology is currently being applied to glass substrate processing and is a preferred route for producing micro-holes in glass substrates. This technology processes glass through selective laser modification and then uses wet chemical etching to etch the modified areas, creating high-precision micro-holes. This technology enables high-quality through-glass holes that are free of microcracks, debris, and residual thermal stress.

[0004] However, traditional processing still has some problems, such as laser instability, which leads to errors in the modified area. For example, traditional etching liquid and glass substrate are static etching, the etching liquid has poor flow, and bubbles are easily trapped in the hole. As the hole depth increases, the exchange efficiency of the etching liquid decreases, resulting in an increase in the hole taper and a decrease in etching accuracy. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the present invention provides a glass substrate laser TGV processing device, which has the advantages of stable and reliable laser, accurate and stable modified area of the glass substrate, high etching efficiency and good precision effect.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a glass substrate laser TGV processing device, comprising:

[0007] A laser emitting device for emitting an output pulsed femtosecond laser and forming a microporous modified area on the glass substrate so that the etching rate of the modified area is different from that of the unmodified area;

[0008] A laser feedback device is used to detect and provide feedback on whether the output laser is consistent with the required processing requirements. The laser feedback device includes a high-speed photodetector, which is provided on one side of the output end of the laser emitting device;

[0009] The translation stage is used to carry the glass substrate and drive the glass substrate to move, and cooperate with the laser emitting device to form an array of micro-hole modified areas on the glass substrate;

[0010] The modification detection device includes a camera module disposed below the glass substrate, the camera module being capable of moving and scanning the entire range of the glass substrate and sending images to an external computer;

[0011] An ultrasonic etching device uses an etching solution to etch the processed glass substrate, so that micropores are formed in the modified area of the glass substrate;

[0012] The etching monitoring device is used to monitor the progress of the etching reaction.

[0013] The present invention is further configured as follows: the high-speed photoelectric detector detects the high-speed pulse count and waveform integration of the output laser, and the laser feedback device confirms whether the number and energy range of the pulses are consistent with the required processing requirements through the parameters detected by the high-speed photoelectric detector.

[0014] The present invention is further configured as follows:

[0015] The camera module includes a high-resolution camera and a microscope lens. The camera module is used to identify and calibrate the grayscale and position of the modified area, and compare them with the grayscale and position of the prefabricated processing pattern. If defects exist, the defects are repaired.

[0016] The present invention is further configured as follows: the ultrasonic etching device includes a high-frequency ultrasonic transducer and a low-frequency ultrasonic transducer connected to an external ultrasonic generator, the high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer are arranged in an array, and the low-frequency and high-frequency working modes are alternately adopted.

[0017] The present invention is further configured as follows:

[0018] The etching solution has a concentration of 10% hydrofluoric acid and is added with 0.1%-1% sodium lauryl sulfate.

[0019] The present invention is further configured as follows:

[0020] The etching monitoring device includes a spectrophotometer, a strong acid-resistant liquid guide tube, a sampling chamber, a magnetic pump and a reflux pipe. One end of the liquid guide tube is connected to the etching liquid in the ultrasonic etching device, and the other end is connected to the inlet of the collection chamber. One end of the reflux pipe is connected to the outlet of the sampling chamber, and the other end is connected back to the ultrasonic etching device through the magnetic pump. The sampling chamber is provided with a branch pipe connected to the outside and used for adding molybdate. The spectrophotometer is used to monitor the absorbance of the etching solution at a wavelength of 810nm after molybdate is added.

[0021] The present invention is further configured as follows: the etching monitoring device includes a monitoring substrate, on which a pulse ultrasonic emitting unit and an echo detection unit are provided. The monitoring substrate is arranged on one side of a glass substrate, and the pulse ultrasonic emitting unit emits ultrasonic waves in a direction perpendicular to the glass substrate for amplitude scanning, and the echo detection unit detects the echo after the ultrasonic waves return through the glass substrate.

[0022] The present invention is further configured as follows: a plurality of branch pipes are provided at one end of the liquid guiding tube connected to the ultrasonic etching device, and the branch pipes are distributed at different positions according to the distance from the substrate.

[0023] The present invention is further configured as follows: the ultrasonic etching device includes an outer box, a water tank located in the outer box, and an etching solution tank located in the water tank; the high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer are both arranged in the outer box and offset against the water tank.

[0024] The present invention is further configured as follows: a supporting fixture is provided in the etching solution tank, the supporting fixture is used to position the glass substrate, and the surface of the glass substrate is transverse to the direction of the ultrasonic wave; the etching solution tank is configured as a structure that is narrow at the bottom and wide at the top, and the narrow end of the etching solution tank faces the high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer.

[0025] In summary, the present invention has the following beneficial effects:

[0026] The present invention provides a laser feedback device to detect the output laser, so that the laser can meet the processing requirements, improve the performance stability of the laser during processing, and correspondingly improve the processing quality.

[0027] The present invention is provided with a modification detection device, which scans the glass substrate through a camera module and compares the image information with the grayscale and position of the prefabricated processing pattern pre-stored in an external computer, thereby judging whether the modification of the glass substrate is accurate.

[0028] The present invention also focuses on the etching problem of glass substrates and provides an ultrasonic etching device, whose array is equipped with low-frequency ultrasonic transducers and high-frequency ultrasonic transducers, and adopts a high-low frequency alternating working mode. The low frequency generates large-sized cavitation bubbles, which promotes the flow of macroscopic etching solution and promotes the exchange of etching solution in the hole; the high frequency can break up large bubbles and reduce the obstruction of bubbles near the hole wall to the solution. The two work together to improve the etching efficiency and effect.

[0029] The present invention provides a monitoring device to monitor the etching progress in real time. Compared with the traditional method of judging the etching progress only by etching time, real-time monitoring of the etching progress can avoid the precision error caused by over-etching, thereby improving the processing quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a schematic diagram of the laser emitting device and the translation stage.

[0031] Figure 2 This is a schematic diagram of the principle of the laser feedback device.

[0032] Figure 3 It is a schematic diagram of the structure of the ultrasonic etching device.

[0033] Figure 4 It is a schematic diagram of the principle of the modification detection device.

[0034] Figure 5 Schematic diagram of the etching monitoring device of Example 1.

[0035] Figure 6 Schematic diagram of the etching monitoring device of Example 2.

[0036] Figure numerals: 1. Laser emitting device; 2. Translation stage; 3. Ultrasonic etching device; 4. Glass substrate; 5. High-frequency ultrasonic transducer; 6. Low-frequency ultrasonic transducer; 7. Outer box; 8. Water tank; 801. Water body; 9. Etching solution tank; 901. Etching solution; 902. Support fixture; 10. Spectrophotometer; 11. High-resolution camera; 12. Microscope lens; 13. High-speed photodetector; 14. Liquid guide tube; 15. Monitoring substrate; 151. First echo; 152. Second echo; 153. Third echo. DETAILED DESCRIPTION

[0037] The present invention will be further described in detail below with reference to the accompanying drawings.

[0038] This embodiment discloses a glass substrate laser TGV processing device, such as Figure 1-6 Shown, including:

[0039] The laser emitting device 1 is used to emit a pulsed femtosecond laser and form a microporous modified area on the glass substrate 4, thereby differentiating the etching rate between the modified area and the unmodified area. The laser emitting device 1 can be flexibly and precisely moved along the Z-axis in the height direction to adjust the focus spot position of the femtosecond laser to form the microporous modified area on the glass substrate 44. The pulse energy of the femtosecond laser can be selected between 20 and 150 μJ, and the pulse duration ranges from 100 fs to 800 fs.

[0040] The laser emission device converts a Gaussian beam into a Bessel beam output through existing optical components or a spatial light modulator. The Bessel lens used uses an axicon to convert the incident Gaussian beam into a Bessel beam. At a wavelength of λ = 1064nm, a double-telecentric optical system consisting of two lenses reduces the diameter of the central main lobe of the Bessel beam to approximately 3μm, with a diffraction-free transmission distance of approximately 2.5mm. The Bessel beam forms a diffraction-free, long-focus depth of field distribution within the glass substrate. The Bessel beam characteristic effectively avoids the energy loss caused by reflection and scattering on the glass surface when focusing a traditional Gaussian beam, while also suppressing the taper effect commonly seen in laser deep hole machining, resulting in improved machining accuracy.

[0041] The laser feedback device is used to detect and provide feedback on whether the output laser is consistent with the required processing requirements. The laser feedback device includes a high-speed photodetector 13, which is arranged on one side of the output end of the laser emitting device 1; thereby, the laser is detected and fed back through the laser feedback device to ensure that the emitted laser meets the processing requirements, avoid processing problems caused by laser defects, and improve the quality of processing.

[0042] The translation stage 2 is used to support the glass substrate 4 and drive the glass substrate 4 to move, cooperating with the laser emitting device 1 to form an array of microporous modified areas on the glass substrate 4; the translation stage 2 can be flexibly and precisely moved in the XY direction of a height plane to adjust the position of the glass substrate 4 and form multiple microporous modified areas in an array on the glass substrate 4 according to needs.

[0043] The modification detection device includes a camera module arranged below the glass substrate 4. The camera module can move and scan the entire range of the glass substrate 4, and send the image to an external computer. Preferably, a cavity is provided in the displacement stage 2, and the modification detection device is directly arranged in the cavity of the displacement stage 2. In this way, the modification detection device can directly detect the processed glass substrate 4, effectively discover defects in the modified area, facilitate subsequent rapid repair processing, and further ensure the stability of the processing quality.

[0044] The ultrasonic etching device 3 uses an etching solution to etch the processed glass substrate, so that the modified area forms micropores in the glass substrate 4. Etching with ultrasonic waves effectively accelerates the etching rate.

[0045] The etching monitoring device is used to monitor the progress of the etching reaction. Traditional etching relies on experience to determine the progress of etching, which is subject to significant human influence and generally poor etching results. The etching monitoring device of this embodiment can provide timely feedback to the operator after etching is completed, avoiding under-etching or over-etching that may affect processing accuracy.

[0046] The transfer of the glass substrate 4 can be achieved by using a non-contact gripper in conjunction with a high-precision industrial robot. In particular, when transferring the modified glass substrate 4 into the ultrasonic etching device 3, it is necessary to ensure a constant speed and accurate position during the transfer process to avoid damage to the glass substrate 4 during the transfer process.

[0047] Furthermore, in the laser feedback device, the high-speed photodetector 13 detects the high-speed pulse count and waveform integration of the output laser. The high-speed photodetector 13 detects the corresponding parameters, thereby determining the number of pulses and the energy range, and confirming whether the number of pulses and the energy range are consistent with the required processing requirements; if they are consistent, the processing continues; if they are not consistent, the parameters of the laser emitting device 1 are adjusted to make it re-emit the required laser. This embodiment first detects the laser through the detection of the high-speed photodetector 13 to ensure that the output laser meets the requirements. At the same time, it can also detect and feedback the output laser in real time.

[0048] Furthermore, the camera module includes a high-resolution camera 11 and a microscope lens 12. The high-resolution camera 11, for example, is a 600-megapixel camera, and the microscope lens 12 is mounted on it. The grayscale and position of the modified area can be identified and calibrated. The returned image information is compared with the grayscale and position of the prefabricated processing pattern by a computer. If the actual image returned is defective compared to the prefabricated image, the defective position is repaired in conjunction with the laser emitting device 1 and the translation stage 2. At the same time, during the inspection, a near-infrared light source can be set above the glass substrate 4 to ensure the clarity of the camera's image acquisition. The angle of the light source can also be adjusted, for example, tilted 30 to 60 degrees to utilize scattering differences to enhance the contrast between the modified and unmodified areas.

[0049] Furthermore, the ultrasonic etching device 3 includes a high-frequency ultrasonic transducer 5 and a low-frequency ultrasonic transducer 6 connected to an external ultrasonic generator. The high-frequency ultrasonic transducer 5 and the low-frequency ultrasonic transducer 6 are arranged in an array, and the low-frequency and high-frequency working mode are adopted. First, for the low-frequency ultrasonic wave, it produces larger bubbles, which use a strong flow field to promote the flow of the etching solution 901 on the macro level, promote the liquid exchange in the micropore etching, and accelerate the bubble to float and escape. Secondly, the high-frequency ultrasonic wave can break up the large bubbles remaining near the pore wall, thereby reducing the liquid retention near the pore wall and reducing the obstruction of the bubbles to the etching solution 901. Therefore, through the synergy of the two, the low frequency dominates the macro liquid flow update, and the high frequency is responsible for the local micro-area disturbance, thereby achieving an improvement in etching efficiency and effect. At the same time, the alternating working mode can be that the low frequency accounts for 70% and the high frequency accounts for 30% in one cycle. Among them, the low frequency is dominant, and the reaction between the etching solution 901 and the glass substrate 4 is accelerated by large-sized cavitation bubbles. The high frequency supplements the generation of tiny bubbles, refines the etching interface, reduces residues, and improves etching accuracy. At the same time, the alternating operation of high and low frequencies also reduces the continuous load of a single ultrasonic transducer and prolongs its service life. At the same time, it achieves an optimal balance between etching efficiency and precision, while also achieving process stability and cost-effectiveness.

[0050] Furthermore, in this embodiment, the etching solution has a concentration of 10% hydrofluoric acid and 0.1%-1% sodium lauryl sulfate is added. The addition of a certain amount of sodium lauryl sulfate as a surfactant can significantly reduce the surface tension of the etching solution, enhance the wettability of the solution to the glass substrate 4, and enable the etching solution to more evenly cover complex microscopic surfaces (such as through-hole structures with a high aspect ratio), thereby improving the uniformity of the etched pattern. By improving wettability, defects such as "grooves" and "ripples" caused by insufficient local wetting can be avoided. At the same time, the acid mist formed by the volatilization of hydrofluoric acid is suppressed, reducing corrosion to the operating environment and equipment. The surfactant can also promote the etching solution to penetrate into the micropores, increase the effective etching area, and shorten the etching time. At the same time, a constant temperature system is equipped to maintain the temperature of the HF solution at 20°C to 40°C.

[0051] Furthermore, the etching monitoring device has two different embodiments according to different monitoring methods:

[0052] Example 1: The etching monitoring device includes a spectrophotometer 10, a strong acid-resistant liquid guide tube 14, a sampling chamber, a magnetic pump and a reflux pipe. One end of the liquid guide tube 14 is connected to the etching liquid in the ultrasonic etching device 3, and the other end is connected to the inlet of the collection chamber. One end of the reflux pipe is connected to the outlet of the sampling chamber, and the other end is connected back to the ultrasonic etching device 3 through a magnetic pump; the sampling chamber is provided with a branch pipe connected to the outside and used to add molybdate. The spectrophotometer 10 is used to monitor the absorbance of the etching solution at a wavelength of 810nm after molybdate is added. Through the above structure, the etching monitoring device of Example 1 monitors the etching liquid. Since HF and SiO2 react to generate SiF4 gas, it hydrolyzes in the liquid to generate orthosilicic acid, and then adds molybdate to form a silicon-molybdenum blue complex. At this time, the spectrophotometer 10 is used to measure the absorbance at a wavelength of 810nm to detect the content of orthosilicic acid in the etching liquid, thereby monitoring the etching progress. This monitoring method starts from the perspective of the etching reaction, can effectively judge the reaction progress, and can provide timely feedback after the etching reaction is completed, thereby avoiding excessive etching and improving processing accuracy.

[0053] Example 2: The etching monitoring device includes a monitoring substrate 15, on which a pulse ultrasonic emitting unit and an echo detection unit are provided. The monitoring substrate 15 is arranged on one side of the glass substrate 4, and the pulse ultrasonic emitting unit emits ultrasonic waves in a direction perpendicular to the glass substrate 4 for amplitude scanning, and the echo detection unit detects the echo after the ultrasonic waves return through the glass substrate 4. Through the above structure, Example 2 directly detects the glass substrate 4 using pulsed ultrasonic waves. Using a principle similar to ultrasonic flaw detection, after an appropriate etching time, the ultrasonic etching device 3 briefly pauses the ultrasonic waves emitted, and the pulsed ultrasonic wave transmitting unit on the monitoring substrate 15 is turned on to emit 12 MHz ultrasonic waves and perform amplitude scanning. The non-porous glass substrate 4 returns two echoes corresponding to the two side surfaces of the glass substrate 4. During the etching process, a third echo 153 is generated corresponding to the etching depth of the hole. It should be noted that the echo at this time is the collective effect of a large number of micropores on the entire glass substrate 4. During the etching process, it is necessary to pause the ultrasonic wave of the ultrasonic etching device 3 multiple times and start the pulsed ultrasonic wave on the monitoring substrate 15. As the etching reaction proceeds, the third echo 153 can be monitored to move from the first echo 151 (the echo generated on the front surface of the glass substrate 4) to the second echo 152 (the echo generated on the back surface of the glass substrate 4). When the third echo 153 on the echo detection unit overlaps with the second echo 152, the surface hole has been penetrated and the etching is complete. This monitoring method directly measures the depth of the micropores on the glass substrate 4, making it more accurate in determining the etching progress. Furthermore, the pulsed ultrasonic waves used for monitoring can further expel bubbles that accumulate in the micropores during the etching process. Furthermore, when etching multiple glass substrates 4, multiple monitoring substrates 15 can be provided to correspond to the multiple glass substrates 4.

[0054] Furthermore, based on the etching monitoring device of Example 1, the end of the liquid guide tube 14 connected to the ultrasonic etching device 3 is provided with multiple branches, which are distributed at different positions according to the distance from the substrate. This has the advantage of collecting etching liquid from multiple positions, allowing for more accurate judgment of the overall etching reaction progress.

[0055] Furthermore, the ultrasonic etching device 3 of the present invention includes an outer box 7, a water tank 8 located in the outer box 7, and an etching solution tank 9 located in the water tank 8. The high-frequency ultrasonic transducer 5 and the low-frequency ultrasonic transducer 6 are both arranged in the outer box 7 and offset from the water tank 8. Through the above design, when working, the ultrasonic transducer first applies ultrasonic energy to the water 801 in the water tank 8, and then applies ultrasonic energy to the etching solution 901 located in the etching solution tank 9 inside through the water, and the solution in the etching solution tank 9 transmits the ultrasonic energy to the glass substrate 4. Therefore, through the buffering transmission of the water medium and the etching solution tank 9, the ultrasonic wave is prevented from directly transmitting energy to the glass substrate 4, especially when switching between high-frequency and low-frequency ultrasonic waves, which effectively avoids damage to the glass substrate 4. At the same time, water serves as an efficient medium for ultrasonic propagation, and the liquid level in the water tank 8 is higher than the liquid level in the etching solution tank 9. In this way, the water can diffuse the ultrasonic energy relatively evenly to the entire etching solution tank 9, rather than completely one-way transmission, thereby achieving wide-area energy coverage and good etching effect, which is particularly suitable for the processing of multiple glass substrates 4 and large-area glass substrates 4.

[0056] Furthermore, a support fixture 902 is provided in the etching solution tank 9. The support fixture 902 is used to position the glass substrate 4, and the surface of the glass substrate 4 is transverse to the direction of the ultrasonic wave. Specifically, the high-frequency ultrasonic transducer 5 and the low-frequency ultrasonic transducer 6 are both provided at the bottom, and the glass substrate 4 is provided vertically. This has the advantage of facilitating batch processing of glass substrates. If the glass substrate 4 is provided horizontally, then when batch processing is performed, the upper glass substrate 4 is easily attenuated due to the ultrasonic wave passing through the glass substrate 4, reducing efficiency. At the same time, from the perspective of the direct transmission direction of the ultrasonic wave, the ultrasonic wave transmission direction of this embodiment is transverse to the surface of the glass substrate 4, generating a cavitation effect. The energy released when the generated microbubbles burst can promote the chemical reaction between the etching solution and the glass surface. The etching solution tank 9 is configured as a narrow bottom and wide top structure, with the narrow end of the etching solution tank 9 facing the high-frequency ultrasonic transducer 5 and the low-frequency ultrasonic transducer 6. First, the narrow bottom and wide top make the side walls tilted, destroying the symmetry of the sound wave reflection, and further avoiding the periodic superposition of standing waves. At the same time, the structure of being narrow at the bottom and wide at the top reduces the flow rate of the etching solution 901 when it flows from the narrow end to the wide end at high speed, causing the pressure to rise, thereby promoting the formation of a large-scale vortex in the etching solution within the tank. Ultrasonic waves are used to increase the flow of the etching solution 901 as a whole, avoiding dead zones without having to rely on an additional circulation system to increase the flow of the etching solution 901. The structure is simple and reduces costs. At the same time, during the rising process of bubbles generated by ultrasonic cavitation, the probability of bubble aggregation is reduced due to the expansion of the cross-sectional area of the tapered tank, thereby reducing the shielding effect of macroscopic bubbles on the sound field. Preferably, the side wall inclination angle of the etching solution tank 9 is a 20° cone angle. If it is too small, the effect of the tapered structure will not be obvious, and if it is too large, the narrow end area will be too small, which is not conducive to batch processing of glass substrates 4.

[0057] After the etching is completed, the glass substrate 4 needs to be cleaned. At this time, the external collection pipe and storage tank are connected to collect the etching waste liquid into the storage tank, and then the cleaning liquid is added to the etching solution tank 9 to clean the etched glass substrate 4 multiple times (for example, 3 times), thereby obtaining the processed glass substrate 4.

[0058] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the design concept of the present invention should be included in the scope of protection of the present invention.

Claims

1. A glass substrate laser TGV processing device, characterized by: include: A laser emitting device for emitting an output pulsed femtosecond laser and forming a microporous modified area on the glass substrate so that the etching rate of the modified area is different from that of the unmodified area; A laser feedback device is used to detect and provide feedback on whether the output laser is consistent with the required processing requirements. The laser feedback device includes a high-speed photodetector, which is provided on one side of the output end of the laser emitting device; The translation stage is used to carry the glass substrate and drive the glass substrate to move, and cooperate with the laser emitting device to form an array of micro-hole modified areas on the glass substrate; The modification detection device includes a camera module disposed below the glass substrate, the camera module being capable of moving and scanning the entire range of the glass substrate and sending images to an external computer; An ultrasonic etching device uses an etching solution to etch the processed glass substrate, so that micropores are formed in the modified area of the glass substrate; The etching monitoring device is used to monitor the progress of the etching reaction.

2. The glass substrate laser TGV processing device according to claim 1, characterized in that: The high-speed photoelectric detector detects the high-speed pulse count and waveform integration of the output laser, and the laser feedback device confirms whether the number and energy range of the pulses are consistent with the required processing requirements through the parameters detected by the high-speed photoelectric detector.

3. The glass substrate laser TGV processing device according to claim 1, characterized in that: The camera module includes a high-resolution camera and a microscope lens. The camera module is used to identify and calibrate the grayscale and position of the modified area, and compare them with the grayscale and position of the prefabricated processing pattern. If defects exist, the defects are repaired.

4. The glass substrate laser TGV processing device according to claim 1, characterized in that: The ultrasonic etching device includes a high-frequency ultrasonic transducer and a low-frequency ultrasonic transducer connected to an external ultrasonic generator. The high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer are arranged in an array, and the low-frequency and high-frequency working modes are alternately used.

5. The glass substrate laser TGV processing device according to claim 1, characterized in that: The etching solution has a concentration of 10% hydrofluoric acid and is added with 0.1%-1% sodium lauryl sulfate.

6. The glass substrate laser TGV processing device according to claim 1, characterized in that: The etching monitoring device includes a spectrophotometer, a strong acid-resistant liquid guide tube, a sampling chamber, a magnetic pump and a reflux pipe. One end of the liquid guide tube is connected to the etching liquid in the ultrasonic etching device, and the other end is connected to the inlet of the collection chamber. One end of the reflux pipe is connected to the outlet of the sampling chamber, and the other end is connected back to the ultrasonic etching device through the magnetic pump. The sampling chamber is provided with a branch pipe connected to the outside and used for adding molybdate. The spectrophotometer is used to monitor the absorbance of the etching solution at a wavelength of 810nm after molybdate is added.

7. The glass substrate laser TGV processing device according to claim 1, characterized in that: The etching monitoring device includes a monitoring substrate, on which a pulse ultrasonic emitting unit and an echo detection unit are provided. The monitoring substrate is arranged on one side of a glass substrate, and the pulse ultrasonic emitting unit emits ultrasonic waves in a direction perpendicular to the glass substrate for amplitude scanning, and the echo detection unit detects the echo after the ultrasonic waves return through the glass substrate.

8. The glass substrate laser TGV processing device according to claim 6, characterized in that: One end of the liquid guiding tube connected to the ultrasonic etching device is provided with a plurality of branch tubes, and the branch tubes are distributed at different positions according to the distance from the substrate.

9. The glass substrate laser TGV processing device according to claim 4, characterized in that: The ultrasonic etching device comprises an outer box, a water tank located in the outer box, and an etching solution tank located in the water tank. The high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer are both arranged in the outer box and offset against the water tank.

10. The glass substrate laser TGV processing device according to claim 9, characterized in that: A supporting fixture is provided in the etching solution tank, and the supporting fixture is used to position the glass substrate, and the surface of the glass substrate is transverse to the direction of the ultrasonic wave; the etching solution tank is configured as a narrow bottom and wide top structure, and the narrow end of the etching solution tank faces the high-frequency ultrasonic transducer and the low-frequency ultrasonic transducer.

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