Preparation method of mixed target material

Abstract

The invention belongs to the field of mixed target materials, and particularly relates to a preparation method of a mixed target material. Comprising the following steps: S1, performing vacuum hot pressing on powder to prepare a biscuit; s2, carrying out sintering treatment on the prepared plain blank; s3, machining the plain blank to make the plain blank into a required size; s4, binding the plain blank with a back plate to prepare a single target material; s5, injecting other elements into the single target material through ions to prepare a mixed target material; and S6, sintering the prepared mixed target material to prepare a finished product. The invention provides a preparation method of a mixed target material, and aims to overcome the defects of the preparation method of the mixed target material in the prior art.

Description

Technical Field

[0001] The invention belongs to the field of mixed target materials, and particularly relates to a method for preparing a mixed target material. Background Art

[0002] As an important coating material, targets are widely used in many fields such as integrated circuits, flat panel displays, solar energy, and optical devices. However, with the rapid development of various industries, the requirements for target performance are becoming increasingly stringent. Hybrid targets, due to their unique advantages, have become an important development direction to meet these needs.

[0003] In the preparation of mixed target materials, a commonly used preparation method is powder metallurgy. In the powder metallurgy method, powders need to be mixed before the preparation of the mixed target material can be achieved.

[0004] However, in practice, it is found that various problems often occur during the powder mixing step. For example, light powder is suspended on top of heavy powder, making it difficult to achieve uniform mixing; powder adheres to the inner wall of the equipment; powder floats in the air; the introduction of elements such as oxygen, carbon, and nitrogen during the mixing process affects the target material composition; elements that need to be controlled, and differences in crystallization between crystals, easily lead to regional uneven mixing and other problems. Summary of the Invention

[0005] The present invention provides a method for preparing a mixed target material, which aims to solve the shortcomings of the mixed target material preparation method in the prior art.

[0006] In order to achieve the above object, the present invention provides a method for preparing a mixed target material, comprising the following steps:

[0007] S1, vacuum hot pressing the powder to form a green billet;

[0008] S2, sintering the prepared green embryo;

[0009] S3, machining the blank to make it into the required size;

[0010] S4, bonding the blank and the backing plate to form a single target;

[0011] S5, implanting other elements into the single target material through ion implantation to prepare a mixed target material;

[0012] S6, sintering the prepared mixed target material to form a finished product.

[0013] In this approach, a single target material is first prepared, and then ion implantation is performed to create a mixture of target materials within the single target material. This hybrid target preparation method eliminates the need for a powder mixing step, thus resolving the drawbacks of the prior art due to the powder mixing step.

[0014] Preferably, in order to achieve secondary utilization of the unqualified target materials, the present solution further includes S7, detecting whether the finished mixed target materials are qualified, and the unqualified mixed target materials are transferred to the next step;

[0015] S8, detecting the required elements of unqualified mixed target materials;

[0016] S9, implanting the required elements into the unqualified mixed target material through ion implantation to adjust the properties of the mixed target material;

[0017] S10, check again whether the mixed target is qualified, and repeat step S9 for unqualified targets.

[0018] This solution uses ion implantation to inject the desired elements into unqualified mixed target materials, thereby adjusting the properties of the mixed target materials. After the properties of the mixed target materials are adjusted, the mixed target materials can meet the requirements of the application, thus achieving the secondary use of unqualified mixed target materials and enhancing their practicality.

[0019] Preferably, in order to solve the problem of reduced target utilization due to excessively fast etching in local areas of the mixed target, in S9 described in this solution, high-hardness elements are implanted into partial areas of the mixed target by ion implantation to improve the hardness of the local areas of the mixed target.

[0020] This solution improves the hardness of local areas of the mixed target by injecting high-hardness elements. After the hardness of the local areas of the mixed target is improved, the etching rate of the local areas is slowed down, thereby improving the utilization rate of the moderate target.

[0021] Preferably, the high hardness element is element B or element C.

[0022] Preferably, to address the problem of air trapped between the backing plate and the target, in step S4 of this solution, the backing plate is tested for binding compliance, and if unqualified, rebinding is performed. This solution screens out targets with unqualified binding by testing the backing plate for binding compliance. The backing plate and target are then re-bound to ensure that the binding is qualified.

[0023] Preferably, in order to solve the problem of diffusion of the injected elements into non-target areas, in said S6, after the mixed target material is sintered, the mixed target material is rapidly cooled. In this solution, after the mixed target material is sintered, the mixed target material is rapidly cooled to prevent the elements from diffusing into non-target areas.

[0024] Preferably, in order to solve the problem of the implanted elements diffusing into non-target areas, in S6 , the gas doped with inert ions is implanted to contact the mixed target material.

[0025] The beneficial effect of the present invention is that the mixed target material preparation method disclosed in this solution does not require powder mixing, so various problems caused by powder mixing will not occur, thereby solving the shortcomings of the existing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the mixed target material preparation method in Example 1.

[0027] Figure 2 Schematic diagram of the mixed target material preparation method in Example 2. DETAILED DESCRIPTION

[0028] To make the objectives, technical solutions, and advantages of the embodiments more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. When the following description refers to the drawings, unless otherwise indicated, identical numerals in different drawings represent identical or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0029] In this disclosure, unless otherwise specified, directional terms such as "inner" and "outer" are defined based on the contours of the corresponding components. Terms such as "first" and "second" are used in this disclosure to distinguish one element from another and do not convey order or importance.

[0030] Example 1

[0031] Basically as attached Figure 1 As shown, a method for preparing a mixed target material comprises the following steps:

[0032] S1: Vacuum hot pressing the metal powder to form a green blank. The metal powder is a single metal powder, which can be used to produce a single target material. The metal powder is vacuum hot pressed inside a mold to form a green blank.

[0033] S2: After the green blank is made, the green blank is subjected to high-temperature sintering. The high-temperature sintering process can be carried out in a vacuum environment or a protective atmosphere environment.

[0034] S3, machining the sintered green blank to the desired size. Machining can be performed using a lathe, milling machine, or wire cutting, and the resulting green blank has the desired shape and size. For example, machining can be performed to form a round or square target.

[0035] S4: Bond the blank to the backing plate to form a single target. The blank and backing plate can be bonded using soldering or conductive adhesive. After bonding, the bond strength is tested to prevent air from remaining inside the target. If the bond between the blank and backing plate is found to be unsatisfactory, the blank and backing plate are separated and rebonded.

[0036] S5, through the ion implantation process, other elements are implanted into the single target to prepare a mixed target. The other elements implanted in this step are determined by the type of mixed target to be prepared. For example, when preparing a chromium target, phosphorus is implanted; a small amount of La and Gd is doped into cerium oxide, and molybdenum is doped into silicon targets.

[0037] S6, sintering the prepared mixed target material to form a finished mixed target material. This step can repair the mixed target material and solve the problem of lattice damage caused by the ion implantation process.

[0038] At the same time, this embodiment preferably heats the wafer to the target temperature (800-1100°C) in a very short time by a high-power light source (such as a halogen lamp or a laser) during sintering. Subsequently, the mixed target is rapidly cooled (the cooling rate exceeds 100°C / s). This embodiment avoids the diffusion of elements to non-target areas by rapid cooling. In addition, during high-temperature sintering, a gas doped with inert ions (such as carbon ions or fluoride ions) can be brought into contact with the mixed target to further inhibit the diffusion of elements to non-target areas.

[0039] Example 2

[0040] This embodiment is improved on the basis of embodiment 1, such as Figure 2 As shown, when there are unqualified samples of the prepared mixed target materials, in order to reuse the unqualified target materials, this embodiment further includes the following steps:

[0041] S7: Optically inspect the prepared mixed target material to determine its optical and physical properties. If the inspection results indicate that the mixed target material is suitable for use, the mixed target material is qualified. If the inspection results indicate that the mixed target material is unsuitable for use, the mixed target material is defined as unqualified and proceeds to the next step.

[0042] S8. Determine the desired elements in the unqualified mixed target material through optical inspection. For example, if the film produced from the unqualified mixed target material is found to have low light-shielding properties, titanium can be injected accordingly. Alternatively, molybdenum can be injected into the molybdenum silicon target material, or phosphorus can be injected into the molybdenum silicon target material to increase light-shielding properties. This process can also be used to improve the target material's optical density or other properties.

[0043] S9, through the ion implantation process, the required elements of the unqualified mixed target material are injected into the unqualified target material. When the required elements are injected into the unqualified target material, the properties of the unqualified mixed target material change accordingly, and the properties of the mixed target material are adjusted to the required properties. At the same time, in order to solve the problem that the utilization rate of the target material is reduced due to excessive etching in local areas of the mixed target material, high hardness elements (for example: element B or element C) are implanted into partial areas of the mixed target material through the ion implantation process to improve the hardness of the local areas of the mixed target material. Improve the problem of low utilization rate of the target material due to excessive etching in local areas

[0044] S10, re-test the unqualified mixed target. If the test result shows that the mixed target meets the requirements for use, the mixed target is qualified. If the test result shows that the mixed target does not meet the requirements for use, return to step S9 and continue to inject the required elements.

[0045] The above is only an embodiment of the present invention, and the common knowledge such as the specific structure and characteristics of the scheme is not described in detail here. It should be pointed out that for those skilled in the art, without departing from the structure of the present invention, several variations and improvements can be made, which should also be regarded as the scope of protection of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent. The scope of protection required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to interpret the content of the claims.

Claims

1. A method for preparing a mixed target material, characterized in that: The following steps are included S1, vacuum hot pressing the powder to form a green billet; S2, sintering the prepared green embryo; S3, machining the blank to make it into the required size; S4, bonding the blank and the backing plate to form a single target; S5, implanting other elements into the single target material through ion implantation to prepare a mixed target material; S6, sintering the prepared mixed target material to form a finished product.

2. The preparation method according to claim 1, wherein: Also includes S7, checking whether the finished mixed target material is qualified, and the unqualified mixed target material product proceeds to the next step; S8, detecting the required elements of unqualified mixed target materials; S9, implanting the required elements into the unqualified mixed target material through ion implantation to adjust the properties of the mixed target material; S10, check again whether the mixed target is qualified, and repeat step S9 for unqualified targets.

3. The preparation method according to claim 1, wherein: In the above-mentioned S9, high hardness elements are implanted into a partial area of the mixed target material by ion implantation to improve the hardness of the local area of the mixed target material.

4. The preparation method according to claim 3, wherein: The high hardness element is element B or element C.

5. The preparation method according to claim 1, wherein: In S4, whether the backplane binding is qualified is detected, and if unqualified, rebinding is performed.

6. The preparation method according to claim 1, wherein: In S6, after the mixed target material is sintered, the mixed target material is rapidly cooled.

7. The preparation method according to claim 1, wherein: In the step S6 , a gas doped with inert ions is injected to contact the mixed target material.

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