A bidirectional bjt solid state circuit breaker and a driving circuit thereof

Abstract

The application provides a bidirectional BJT solid-state circuit breaker and a driving circuit thereof, and relates to the technical field of power electronics.The driving circuit comprises a driving current dynamic adjustment module, which comprises an adaptive adjustment submodule and a fuzzy controller.The adaptive adjustment submodule is used for acquiring current working condition data of the bidirectional BJT device, inputting the current working condition data into a pre-trained long short-term memory network, and acquiring a target base voltage of the bidirectional BJT device.The fuzzy controller is used for acquiring a sampled base voltage of the bidirectional BJT device, adjusting a control signal according to a difference between the target base voltage and the sampled base voltage, and outputting a target control signal.A microwave driving module is used for converting the target control signal into a smooth analog baseband signal, loading the analog baseband signal onto a high-frequency carrier signal, generating a radio frequency modulation signal, and outputting the radio frequency modulation signal to the bidirectional BJT device after rectification processing.The driving circuit can realize dynamic adjustment of the driving current, optimize power consumption, and reduce driving power consumption.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular to a bidirectional BJT solid-state circuit breaker and its driving circuit. Background Technology

[0002] DC power systems are playing an increasingly important role in today's power grids. Over the past few decades, significant advancements have been made in the application of many DC power systems, including photovoltaic systems, distributed generators, energy storage systems, and electric vehicles. Compared to AC systems, DC systems offer advantages such as higher efficiency, higher regenerative integration, and more flexible control.

[0003] Solid-state circuit breakers are considered an effective means of isolating faults in DC power grids. Compared to traditional circuit breakers that rely on mechanical contacts and hybrid circuit breakers that combine mechanical and semiconductor structures, solid-state circuit breakers have achieved a qualitative breakthrough due to their contactless switching characteristics. Their switching speed is significantly improved, the risk of arcing is eliminated, and device lifespan is orders of magnitude longer than that of mechanical structures. They also possess rapid response capabilities to extreme current changes. These advantages make all-solid-state circuit breakers a core guarantee for achieving rapid fault isolation in scenarios such as new energy grid integration and DC microgrids.

[0004] Currently, solid-state circuit breakers are often driven by constant current, which results in high power consumption. Summary of the Invention

[0005] In view of this, this application proposes a bidirectional BJT solid-state circuit breaker and its driving circuit.

[0006] In a first aspect, this application provides a drive circuit for a bidirectional BJT solid-state circuit breaker, the drive circuit comprising:

[0007] The drive current dynamic adjustment module includes an adaptive adjustment submodule and a fuzzy controller. The adaptive adjustment submodule is used to acquire the current operating condition data of the bidirectional BJT device, input the current operating condition data into a pre-trained long short-term memory network, and acquire the target base voltage of the bidirectional BJT device. The fuzzy controller is used to adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal.

[0008] The microwave driving module is used to receive the target control signal and convert the target control signal into a smooth analog baseband signal. The analog baseband signal is loaded onto a high-frequency carrier signal through envelope modulation technology to generate an RF modulation signal. The RF modulation signal is rectified and converted into two low-frequency DC signals, which are respectively output to the two bases of the bidirectional BJT device.

[0009] In one embodiment, the adaptive adjustment submodule includes:

[0010] The detection unit is used to detect the current status information of the bidirectional BJT device and perform data fusion processing on the current status information to obtain the current operating condition data, wherein the current status information includes current information, temperature information and electromagnetic interference information;

[0011] An adaptive regulator is used to receive the current operating condition data, generate an operating condition feature vector based on the current operating condition data, input the operating condition feature vector into a pre-trained long short-term memory network, and obtain the target base voltage of the bidirectional BJT device.

[0012] In one embodiment, the detection unit includes: a current sensor, a temperature sensor, and an electromagnetic interference sensor;

[0013] The current sensor is used to detect the collector current of the bidirectional BJT device;

[0014] The temperature sensor is used to detect the temperature information of the bidirectional BJT device;

[0015] The electromagnetic interference information used to detect the area where the bidirectional BJT device is located.

[0016] In one embodiment, the current state information further includes feedback information from the microwave drive module; the adaptive adjustment submodule further includes a feedback unit, which is used to receive the feedback signal output by the microwave drive module and determine the feedback information based on the feedback signal, wherein the feedback information includes attribute information of the low-frequency DC signal.

[0017] In one embodiment, the microwave driving module includes: a radio frequency oscillator, a radio frequency modulator, and a radio frequency rectifier circuit;

[0018] The radio frequency oscillator is used to generate the high-frequency carrier signal;

[0019] The input terminal of the radio frequency modulator is connected to the radio frequency oscillator and the fuzzy controller respectively. The radio frequency modulator is used to convert the target control signal into the analog baseband signal and modulate it onto the high-frequency carrier signal to generate the radio frequency modulated signal.

[0020] The RF rectifier circuit is connected to the output terminal of the RF modulator. The RF rectifier circuit is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

[0021] In one embodiment, the radio frequency rectification circuit includes: a Wilkinson power divider and a radio frequency rectification unit;

[0022] The input terminal of the Wilkinson power divider is connected to the output terminal of the radio frequency modulator. The Wilkinson power divider is used to distribute the power of the radio frequency modulated signal and output two power-divided signals.

[0023] The radio frequency rectification unit is connected to the two output terminals of the Wilkinson power divider. The radio frequency rectification unit is used to rectify the two power divider signals respectively, and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

[0024] Secondly, this application also provides a bidirectional BJT solid-state circuit breaker, the bidirectional BJT solid-state circuit breaker comprising:

[0025] A bidirectional BJT device, connected to a power supply line, is used to turn the power supply line on and off;

[0026] As described in the first aspect, the driving circuit is connected to the base of the bidirectional BJT device, and the driving circuit is used to output two low-frequency DC signals to the two bases of the bidirectional BJT device to control the on / off state of the bidirectional BJT device.

[0027] In one embodiment, the bidirectional BJT solid-state circuit breaker further includes: a pre-shutdown circuit and a processing circuit;

[0028] The processing circuit is connected to the pre-shutdown circuit. The processing circuit is used to control the conduction state of the pre-shutdown circuit during the pre-shutdown phase, and to form a charge release path for the bidirectional BJT device through the pre-shutdown circuit.

[0029] In one embodiment, the pre-shutdown circuit includes: a first MOSFET, a second MOSFET, a third MOSFET, and a fourth MOSFET;

[0030] The first terminal of the first MOS transistor is connected to the first output terminal of the driving circuit, the second terminal of the first MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the first MOS transistor is connected to the processing circuit.

[0031] The first terminal of the second MOS transistor is connected to the collector of the bidirectional BJT device, the second terminal of the second MOS transistor is connected to the first base of the bidirectional BJT device, and the gate of the second MOS transistor is connected to the processing circuit.

[0032] The first terminal of the third MOS transistor is connected to the second output terminal of the driving circuit, the second terminal of the third MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the third MOS transistor is connected to the processing circuit.

[0033] The first terminal of the fourth MOS transistor is connected to the emitter of the bidirectional BJT device, the second terminal of the fourth MOS transistor is connected to the second base of the bidirectional BJT device, and the gate of the fourth MOS transistor is connected to the processing circuit.

[0034] In one embodiment, during the pre-shutdown phase, the first MOSFET and the third MOSFET are in an off state, while the second MOSFET and the fourth MOSFET are in a conducting state.

[0035] The drive circuit for a bidirectional BJT solid-state circuit breaker disclosed in this application has the following advantages over related technologies:

[0036] 1. The driving circuit of this application includes a dynamic adjustment module for driving current and a microwave driving module. The dynamic adjustment module for driving current includes an adaptive adjustment submodule and a fuzzy controller. The adaptive adjustment submodule can acquire the current operating condition data of the bidirectional BJT device, input the current operating condition data into a pre-trained long short-term memory network, and acquire the target base voltage of the bidirectional BJT device. The fuzzy controller is used to acquire the sampled base voltage of the bidirectional BJT device, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave driving module. The microwave driving module outputs a low-frequency DC signal to the bidirectional BJT device based on the target control signal. Thus, through the synergistic effect of the microwave driving module and the dynamic adjustment module for driving current, the dynamic adjustment of the current in the driving circuit is realized, which can optimize power consumption and reduce driving power consumption.

[0037] 2. The drive current dynamic adjustment module is responsible for medium- and long-term trend modeling and prediction compensation through an LSTM network. It responds to local disturbances in real time through a fuzzy controller, realizing a two-layer control strategy of "prediction + adjustment" for the drive system. This ensures that the system can maintain stable drive and low power consumption under extreme conditions such as rapid load changes or high EMI interference. It can achieve precise and real-time control of the bidirectional BJT base current to adapt to complex load and environmental conditions.

[0038] 3. The microwave drive module of this application adopts a non-contact microwave signal transmission method, which loads the target control signal into the high-frequency carrier signal, transmits it through the radio frequency link, and demodulates and rectifies it on the target side to finally generate a stable and isolated DC current as the driving source for the base of the bidirectional BJT device. While ensuring the effective transmission of high-frequency energy, it realizes efficient gate drive of power switching devices. By adopting microwave drive technology and dynamic adjustment strategy, the response speed of the system is improved, which can meet the fast switching requirements of high-frequency equipment. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of the drive circuit of a bidirectional BJT solid-state circuit breaker in one embodiment of this application;

[0041] Figure 2 This is a schematic diagram of the structure of a bidirectional BJT solid-state circuit breaker in one embodiment of this application;

[0042] Figure 3 This is a timing diagram of the gate drive signals corresponding to the first MOS transistor, the second MOS transistor, the third MOS transistor, and the fourth MOS transistor in one embodiment of this application.

[0043] Explanation of reference numerals in the attached figures:

[0044] 1-Drive circuit, 11-Drive current dynamic adjustment module, 111-Adaptive adjustment sub-module, 1111-Detection unit, 1112-Adaptive regulator, 1113-Feedback unit, 112-Fuzzy controller, 12-Microwave drive module, 121-RF oscillator, 122-RF modulator, 123-RF rectifier circuit, 1231-Wilkinson power divider, 1232-RF rectifier unit, 2-Bidirectional BJT device, 3-Pre-shutdown circuit. Detailed Implementation

[0045] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0046] In some embodiments, such as Figure 1 As shown, the present application provides a drive circuit 1 for a bidirectional BJT solid-state circuit breaker. The drive circuit 1 includes a drive current dynamic adjustment module 11 and a microwave drive module 12.

[0047] The dynamic adjustment module 11 for drive current includes an adaptive adjustment submodule 111 and a fuzzy controller 112. The adaptive adjustment submodule 111 acquires the current operating condition data of the bidirectional BJT (bipolar junction transistor) device 2, inputs the current operating condition data into a pre-trained long short-term memory network, and acquires the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 adjusts the control signal according to the difference between the target base voltage and the sampled base voltage, and outputs the target control signal. It should be noted that the sampled base voltage can be obtained through a corresponding sampling unit. The fuzzy controller 112 can acquire the sampled base voltage of the bidirectional BJT device 2, and then adjust the control signal according to the difference between the target base voltage and the sampled base voltage. Alternatively, the input terminal of the fuzzy controller 112 can be connected to the output terminal of a comparator. By inputting the target base voltage and the sampled base voltage into the two input terminals of the comparator respectively, the output terminal of the comparator outputs an error signal to the fuzzy controller 112.

[0048] The microwave drive module 12 is used to receive the target control signal and convert it into a smooth analog baseband signal. The analog baseband signal is loaded onto the high-frequency carrier signal through envelope modulation technology to generate an RF modulation signal. The RF modulation signal is rectified and converted into two low-frequency DC signals, which are respectively output to the two bases of the bidirectional BJT device 2.

[0049] The Long Short-Term Memory (LSTM) network can be trained based on historical data. The target control signal can be a pulse width modulation (PWM) signal. The pre-trained LSTM network can predict the state change trend of the power device under the current operating conditions based on the current operating data, and output the target base voltage of the bidirectional BJT device 2. This allows the fuzzy controller 112 to adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave drive module 12. The microwave drive module 12 then controls the current output to the base of the bidirectional BJT device 2, thereby achieving dynamic adjustment and optimized control of the base current of the bidirectional BJT device 2.

[0050] To further enhance the system's adaptability and robustness under sudden operating conditions, a fuzzy controller 112 is introduced as an auxiliary loop in the drive current dynamic adjustment module 11. This auxiliary loop takes the voltage error (the difference between the target base voltage and the sampled base voltage) as input and performs fuzzy inference according to pre-set fuzzy rules (rapidly increasing the base drive current when the load is large and the error rises, and appropriately decreasing the base drive current when the load is small). The inference result is defuzzified using the centroid method to obtain a precise control signal, which is used to adjust the control signal (e.g., fine-tuning the PWM duty cycle) and output the target control signal, achieving fast response and stable control. This fuzzy control, combined with a neural network algorithm, can handle the prediction problem of historical data and adjust for sudden operating conditions in real time, ensuring that the system maintains optimal performance under various environments. The drive current dynamic adjustment module 11 is responsible for medium- and long-term trend modeling and prediction compensation through an LSTM network, and responds to local disturbances in real time through a fuzzy controller 112, realizing a two-layer control strategy of "prediction + adjustment" for the drive system. This ensures that the system can maintain stable drive and low power consumption under extreme conditions such as rapid load changes or high EMI interference. It can achieve precise and real-time control of the bidirectional BJT base current to adapt to complex load and environmental conditions.

[0051] The microwave drive module 12 adopts a non-contact microwave signal transmission method, loading the target control signal into the high-frequency carrier signal, transmitting it through the radio frequency link, and demodulating and rectifying it on the target side to finally generate a stable and isolated DC current as the driving source for the base of the bidirectional BJT device 2. While ensuring the effective transmission of high-frequency energy, it realizes efficient gate drive of power switching devices. By adopting microwave drive technology and dynamic adjustment strategy, it improves the system response speed and adapts to the fast switching requirements of high-frequency equipment.

[0052] The drive circuit 1 of the aforementioned bidirectional BJT solid-state circuit breaker includes a drive current dynamic adjustment module 11 and a microwave drive module 12. The drive current dynamic adjustment module 11 includes an adaptive adjustment submodule 111 and a fuzzy controller 112. The adaptive adjustment submodule 111 can acquire the current operating condition data of the bidirectional BJT device 2, input the current operating condition data into a pre-trained long short-term memory network, and acquire the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 is used to acquire the sampled base voltage of the bidirectional BJT device 2, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave drive module 12. The microwave drive module 12 outputs a low-frequency DC signal to the bidirectional BJT device 2 based on the target control signal. Thus, through the synergistic effect of the microwave drive module 12 and the drive current dynamic adjustment module 11, the dynamic adjustment of the current in the drive circuit 1 is realized, which can optimize power consumption and reduce drive power consumption.

[0053] In some embodiments, such as Figure 1 As shown, the adaptive adjustment submodule 111 includes: a detection unit 1111 and an adaptive regulator 1112.

[0054] The detection unit 1111 is used to detect the current status information of the bidirectional BJT device 2 and perform data fusion processing on the current status information to obtain the current operating condition data. The current status information includes current information, temperature information and electromagnetic interference information.

[0055] The detection unit 1111 is used to detect the current status information of the bidirectional BJT device 2 and perform data fusion processing on the current status information to obtain the current operating condition data. The current status information includes current information, temperature information and electromagnetic interference information.

[0056] The detection unit 1111 may include various types of sensors to collect the current status information of the bidirectional BJT device 2. After acquiring the current status information of the bidirectional BJT device 2, the detection unit 1111 is used to detect the current status information of the bidirectional BJT device 2 and perform data fusion processing on the current status information to obtain the current operating condition data. The current status information includes current information, temperature information and electromagnetic interference information.

[0057] The detection unit 1111 can include various types of sensors to collect the current status information of the bidirectional BJT device 2. After acquiring the current status information of the bidirectional BJT device 2, a comprehensive operating condition parameter can be obtained using digital signal processing techniques (such as Kalman filtering). This reduces noise interference, resulting in more accurate and robust real-time monitoring information. (Comprehensive operating parameters) The calculation formula is as follows:

[0058]

[0059] in, The collector current of bidirectional BJT device 2 T is the temperature. For electromagnetic interference, , , These are the weighting coefficients.

[0060] The adaptive regulator 1112 is used to receive current operating condition data, generate an operating condition feature vector based on the current operating condition data, input the operating condition feature vector into a pre-trained long short-term memory network, and obtain the target base voltage of the bidirectional BJT device 2.

[0061] It is understandable that LSTM networks predict future control requirements by processing historical data sequences. By training LSTM networks on time series data, the model will learn to predict the optimal base current under various operating conditions.

[0062] The adaptive regulator 1112 then inputs the current operating condition data into the pre-trained LSTM model. The LSTM model determines a correction factor α, which further determines the target base current. Based on the target base current, the target base voltage is determined, thus completing the dynamic adjustment of the base current of the bidirectional BJT device 2, enabling the base current to accurately match the load requirements. The base current... From collector current Determined by the preset scaling factor β:

[0063]

[0064] The target base current is:

[0065]

[0066] Target base voltage , For the driving resistor, the target base voltage and the sampling base voltage are... The difference Then, through self-learning control of the target base current, It dynamically adjusts based on complex factors such as real-time load changes and temperature fluctuations, rather than relying solely on simple proportional relationships, and adjusts the control signal accordingly. This allows the base current regulation to adapt to more complex operating conditions, accurately match load requirements, achieve more efficient and precise control, thereby reducing power consumption and improving response speed.

[0067] An error signal is generated by comparing the target voltage with the actual feedback voltage. Within each control cycle, the system acquires the feedback voltage of the base current in real time and utilizes... By driving the fuzzy controller 112 to adjust the duty cycle D of the PWM signal, the base current can be controlled, thereby averaging the base current. satisfy:

[0068]

[0069] in, This represents the base current amplitude.

[0070] In some embodiments, the detection unit 1111 includes: a current sensor, a temperature sensor, and an electromagnetic interference sensor. The current sensor is used to detect the collector current of the bidirectional BJT device 2; the temperature sensor is used to detect the temperature information of the bidirectional BJT device 2; and the sensor is used to detect the electromagnetic interference information of the area where the bidirectional BJT device 2 is located.

[0071] The current sensor can be a Hall sensor. In applications, other types of sensors can also be used, such as vibration generators and humidity sensors.

[0072] It is understandable that a multi-dimensional data acquisition network can be formed by using multiple sensors such as current sensors, temperature sensors, and electromagnetic interference sensors to obtain real-time status data of the environment and the bidirectional BJT device 2, thereby facilitating the acquisition of accurate current operating condition data. After inputting the current operating condition data into the LSTM network, the LSTM network can be used to predict the optimal base drive current under the current operating conditions, thereby optimizing the base drive current and improving the power consumption and performance of the solid-state circuit breaker.

[0073] In some embodiments, the current status information also includes feedback information from the microwave drive module 12; the adaptive adjustment submodule 111 further includes a feedback unit 1113, which is used to receive the feedback signal output by the microwave drive module 12 and determine the feedback information based on the feedback signal, wherein the feedback information includes attribute information of the low-frequency DC signal.

[0074] The microwave drive module 12 can be configured with an RF output monitoring channel to collect signals such as power, spectrum, or envelope offset in real time as feedback signals. The feedback unit 1113 receives the feedback signals output by the microwave drive module 12. The RF output feedback information from the microwave drive module 12 (such as rectified output current, voltage envelope amplitude, spectrum offset, etc.) and the information detected by the detection unit 1111 are combined to construct a more complete set of current operating condition data.

[0075] When the current operating condition data includes feedback information, the LSTM network can output a more accurate target base voltage after the current operating condition data is input. Therefore, the regulation module not only controls the RF behavior but also uses the RF output as model input, forming a two-way linkage architecture of "prediction-regulation-execution-feedback-relearning," which is beneficial for further optimizing the base drive current.

[0076] It should be noted that in the application, the microwave drive module 12 and the dynamic adjustment module can adopt a common platform deployment strategy (such as being integrated into the same SoC or FPGA platform), which is conducive to improving the integration level and facilitating the cooperation between the microwave drive module 12 and the dynamic adjustment module. This is beneficial for building bidirectional BJT solid-state circuit breakers that meet the requirements of high-frequency isolation, fast turn-off, and high robustness.

[0077] In some embodiments, such as Figure 1 As shown, the microwave drive module 12 includes: an RF oscillator 121, an RF modulator 122, and an RF rectifier circuit 123.

[0078] The RF oscillator 121 is used to generate a high-frequency carrier signal. The RF oscillator 121 can be a common-base Colpitts oscillator based on SiC devices, utilizing the high-frequency characteristics of the SiC transistor (cutoff frequency fT > 30 GHz) to generate a 5 GHz high-frequency carrier signal. A suitable LC circuit (inductor L and capacitor C) is selected to set the oscillation frequency to 5 GHz. The oscillation frequency calculation formula is as follows:

[0079]

[0080] The input terminals of the RF modulator 122 are connected to the RF oscillator 121 and the fuzzy controller 112, respectively. The RF modulator 122 is used to convert the target control signal into an analog baseband signal and modulate it onto a high-frequency carrier signal to generate an RF modulated signal. The RF modulator 122 can extract the average voltage of the target control signal (e.g., a PWM signal) by using a second-order Butterworth low-pass filter, suppress high-frequency components, and convert the PWM signal into a smooth analog baseband signal so that it can be loaded onto the high-frequency carrier signal through envelope modulation technology.

[0081] For example, the original PWM signal is modulated onto the carrier signal using envelope modulation technology. The principle is to mix the low-frequency PWM signal with the high-frequency carrier signal. The frequency of the modulated signal can be 5.0 GHz, and its envelope changes with the PWM signal.

[0082] The RF rectifier circuit 123 is connected to the output terminal of the RF modulator 122. The RF rectifier circuit 123 is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device 2 respectively.

[0083] It is understandable that by rectifying the radio frequency modulated signal through the radio frequency rectifier circuit 123, high-frequency components are filtered out through rectification, ensuring a stable DC output voltage, which can ensure a reliable drive power supply and meet the requirements of high-efficiency drive.

[0084] In some embodiments, such as Figure 1As shown, the RF rectifier circuit 123 includes a Wilkinson power divider 1231 and an RF rectifier unit 1232.

[0085] The Wilkinson power divider 1231 has its input connected to the output of the RF modulator 122. The Wilkinson power divider 1231 is used to distribute the power of the RF modulated signal, outputting two power-divided signals. The RF rectifier unit 1232 is connected to the two outputs of the Wilkinson power divider 1231, and is used to rectify the two power-divided signals, respectively outputting two low-frequency DC signals to the two bases of the bidirectional BJT device 2.

[0086] Understandably, to reduce signal loss, the modulated high-frequency radio frequency signal is fed into the Wilkinson power divider 1231 for power distribution and port isolation. This power divider uses a microstrip structure and isolation resistors to achieve equal power output from multiple signals and ensures good isolation between output channels, thereby improving system stability and crosstalk immunity.

[0087] The formula for calculating the wavelength of a microwave signal is: Where c is the speed of light and f is the frequency. For a 5 GHz signal, the wavelength is 6 centimeters.

[0088] A 1-to-2 Wilkinson power divider 1231 is used to distribute a high-frequency modulated signal to two output ports. The Wilkinson power divider 1231 achieves power distribution and port isolation through a λ / 4 impedance transformation section. Its characteristic impedance... From the formula Sure, This is the input impedance.

[0089] During power distribution, the Wilkinson Power Divider 1231 ensures high isolation between ports through isolation resistors to prevent signal crosstalk. Suppress coupling between output ports. To ensure phase synchronization of the output signals, the phase difference of the output signals is adjusted by a phase-compensated microstrip line to ensure that the phase difference of each output signal is less than 5°.

[0090] For example, a Schottky diode rectifier circuit can be used to convert the two power-divided signals into low-frequency DC signals. A low-pass filter can also be used to filter out high-frequency components, ensuring a stable output DC voltage. Furthermore, a linear regulator can be used to adjust the output voltage, ensuring a constant and fluctuation-free supply voltage to provide a reliable drive power supply and meet high-efficiency drive requirements.

[0091] In this embodiment, high-frequency isolated signal transmission is achieved through a radio frequency microstrip transmission structure and a power distribution network, reducing reliance on traditional isolation components and simplifying the isolation design. Compared to traditional transformer-driven methods, which are susceptible to parasitic inductance and leakage inductance in high-frequency applications, leading to increased base storage effects and decreased switching speed, this embodiment employs microwave driving technology and a dynamic adjustment strategy to improve the system's response speed and meet the rapid switching requirements of high-frequency devices. Furthermore, addressing the issue that traditional optocoupler and transformer isolation methods struggle to meet the rapid switching needs of high-frequency devices and affect system efficiency, the microwave driving module 12 in this embodiment uses microwaves for signal propagation, ensuring stable and efficient operation of the solid-state circuit breaker under high-frequency conditions.

[0092] In some embodiments, such as Figure 1 As shown, this application also provides a bidirectional BJT solid-state circuit breaker, which includes: a drive circuit 1 as described in any of the above schemes and a bidirectional BJT device 2.

[0093] The bidirectional BJT device 2 is connected to the power supply line and is used to turn the power supply line on and off.

[0094] The driving circuit 1 is connected to the base of the bidirectional BJT device 2. The driving circuit 1 is used to output two low-frequency DC signals to the two bases of the bidirectional BJT device 2 to control the on and off of the bidirectional BJT device 2.

[0095] In this device, the collector of the bidirectional BJT 2 can receive the power supply signal Vc, and the emitter of the bidirectional BJT 2 can be grounded. The driving circuit 1 can output two low-frequency DC signals to the two bases of the bidirectional BJT 2 to control the on / off state of the bidirectional BJT 2.

[0096] It is understood that the drive circuit 1 includes a drive current dynamic adjustment module 11 and a microwave drive module 12. The drive current dynamic adjustment module 11 includes an adaptive adjustment submodule 111 and a fuzzy controller 112. The adaptive adjustment submodule 111 can acquire the current operating condition data of the bidirectional BJT device 2, input the current operating condition data into a pre-trained long short-term memory network, and acquire the target base voltage of the bidirectional BJT device 2. The fuzzy controller 112 is used to acquire the sampled base voltage of the bidirectional BJT device 2, adjust the control signal according to the difference between the target base voltage and the sampled base voltage, and output the target control signal to the microwave drive module 12. The microwave drive module 12 outputs a low-frequency DC signal to the bidirectional BJT device 2 based on the target control signal. Thus, through the synergistic effect of the microwave drive module 12 and the drive current dynamic adjustment module 11, the dynamic adjustment of the current in the drive circuit 1 is realized, which can achieve power consumption optimization and reduce drive power consumption. Similarly, since the bidirectional BJT solid-state circuit breaker of this embodiment includes a bidirectional BJT device 2 and a drive circuit 1 as described in any of the above schemes, the BJT solid-state circuit breaker of this embodiment also realizes dynamic adjustment of the current in the drive circuit 1, which can optimize power consumption and reduce drive power consumption. Furthermore, it can achieve precise, real-time control of the bidirectional BJT base current to adapt to complex loads and changes in environmental conditions.

[0097] In some embodiments, such as Figure 2 As shown, the bidirectional BJT solid-state circuit breaker also includes: a pre-shutdown circuit 3 and a processing circuit.

[0098] The processing circuit is connected to the pre-shutdown circuit 3. The processing circuit is used to control the conduction status of the pre-shutdown circuit 3 during the pre-shutdown phase, and to form a charge release path for the bidirectional BJT device 2 through the pre-shutdown circuit 3.

[0099] Among them, such as Figure 2 As shown, a bidirectional BJT is a four-terminal device with four terminals: E1, E2, B1, and B2. E1 and E2 are used to connect to the main circuit, while B1 and B2 are used to inject drive current. The E terminal (E1) is on the high-voltage side of the main circuit. Figure 2 The electrode in the middle (E1 electrode) can be called the collector electrode.

[0100] In applications, when a bidirectional BJT is in the ON state, a large number of minority carriers accumulate in the B region (including B1 and B2 regions) and the E region (including E1 and E2 regions). These stored charges need to be removed or recombine before the transistor can be completely turned off. Therefore, in this embodiment, the processing circuit controls the ON state of the pre-turn-off circuit 3 during the pre-turn-off phase, so that the pre-turn-off circuit 3 forms a charge release path for the bidirectional BJT device 2. This creates a dedicated charge release path for the bidirectional BJT device, which can orderly release the residual charge in the device before the turn-off operation. By controlling the pre-turn-off, the base storage effect is reduced, and the turn-off efficiency is improved, thereby ensuring that the solid-state circuit breaker can stably and reliably complete the state switching during the turn-off process.

[0101] In some embodiments, the pre-shutdown circuit 3 includes: a first MOSFET Q1, a second MOSFET Q2, a third MOSFET Q3, and a fourth MOSFET Q4.

[0102] The first terminal of the first MOSFET Q1 is connected to the first output terminal of the drive circuit 1, the second terminal of the first MOSFET Q1 is connected to the first base of the bidirectional BJT device 2, and the gate of the first MOSFET Q1 is connected to the processing circuit.

[0103] The first terminal of the second MOSFET Q2 is connected to the collector of the bidirectional BJT device 2, the second terminal of the second MOSFET Q2 is connected to the first base of the bidirectional BJT device 2, and the gate of the second MOSFET Q2 is connected to the processing circuit.

[0104] The first terminal of the third MOSFET Q3 is connected to the second output terminal of the drive circuit 1, the second terminal of the third MOSFET Q3 is connected to the second base of the bidirectional BJT device 2, and the gate of the third MOSFET Q3 is connected to the processing circuit.

[0105] The first terminal of the fourth MOSFET Q4 is connected to the emitter of the bidirectional BJT device 2, the second terminal of the fourth MOSFET Q4 is connected to the second base of the bidirectional BJT device 2, and the gate of the fourth MOSFET Q4 is connected to the processing circuit.

[0106] Among them, the first MOSFET Q1, the second MOSFET Q2, the third MOSFET Q3, and the fourth MOSFET Q4 can be either NMOS transistors or PMOS transistors, without any specific limitation.

[0107] It can be understood that the processing circuit is connected to the gates of the first MOSFET Q1, the second MOSFET Q2, the third MOSFET Q3, and the fourth MOSFET Q4, respectively. The processing circuit outputs corresponding gate drive signals to each MOSFET, controlling their on / off states. The first MOSFET Q1 controls the on / off state between the driving circuit 1 and the first base of the bidirectional BJT device 2; the second MOSFET Q2 controls the on / off state between the collector and the first base of the bidirectional BJT device 2; the third MOSFET Q3 controls the on / off state between the driving circuit 1 and the second base of the bidirectional BJT device 2; and the fourth MOSFET Q4 controls the on / off state between the emitter and the second base of the bidirectional BJT device 2. By shorting the base and collector of the bidirectional BJT device 2, and shorting the base and emitter of the bidirectional BJT device 2, i.e., putting the second MOSFET Q2 and the fourth MOSFET Q4 in the on state, a low-impedance charge release path is formed, accelerating the recombination of stored charge and significantly reducing turn-off delay. It is also understandable that during pre-shutdown, the connection between the drive circuit 1 and the base of the bidirectional BJT device 2 needs to be disconnected to prevent the drive circuit 1 from continuously supplying charge to the base of the bidirectional BJT device 2. Therefore, during the pre-shutdown phase, the first MOSFET Q1 and the third MOSFET Q3 are in the off state, while the second MOSFET Q2 and the fourth MOSFET Q4 are in the on state. For example, the first MOSFET Q1, the second MOSFET Q2, the third MOSFET Q3, and the fourth MOSFET Q4 can all be PMOS transistors, and the timing diagram of the gate drive signals for each MOSFET can be as follows: Figure 3 As shown.

[0108] It should be noted that since the bidirectional BJT device 2 involved in this application is a completely symmetrical device, the above description of the driving circuit 1 mainly analyzes the forward conduction case. The reverse conduction case is the same as the forward conduction case, and will not be repeated here.

[0109] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this application can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in this application. In particular, the features described in the various embodiments and / or claims of this application can be combined and / or combined in various ways without departing from the spirit and teachings of this application. All such combinations and / or combinations fall within the scope of this application. Therefore, the scope of this application should not be limited to the above embodiments, but should be defined not only by the appended claims, but also by their equivalents. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A bidirectional BJT solid-state circuit breaker, characterized in that, include: Bidirectional BJT device, drive circuit, pre-shutdown circuit and processing circuit; The driving circuit includes a dynamic adjustment module for the driving current and a microwave driving module. The dynamic adjustment module for the driving current includes an adaptive adjustment submodule and a fuzzy controller. The adaptive adjustment submodule includes a detection unit, an adaptive regulator, and a feedback unit. The detection unit is used to detect the current state information of the bidirectional BJT device and perform data fusion processing on the current state information to obtain current operating condition data. The adaptive regulator is used to receive the current operating condition data, generate an operating condition feature vector based on the current operating condition data, and input the operating condition feature vector into a pre-trained long short-term memory network to obtain the target base voltage of the bidirectional BJT device. The feedback unit is used to receive the feedback signal output by the microwave driving module and determine feedback information based on the feedback signal. The current state information includes current information, temperature information, electromagnetic interference information, and feedback information. The feedback information includes the microwave driving module... The system outputs attribute information of a low-frequency DC signal. The fuzzy controller takes the difference between the target base voltage and the sampled base voltage as input, performs fuzzy inference according to pre-set fuzzy rules, and obtains a precise control signal by defuzzifying the inference result using the centroid method. This signal is then used to adjust the control signal and output the target control signal. The long short-time memory network is used to predict the optimal base drive current under current operating conditions. The fuzzy rule is to rapidly increase the base drive current when the load is large and the error is rising, and appropriately decrease the base drive current when the load is small. A microwave drive module receives the target control signal and converts it into a smooth analog baseband signal. It then loads the analog baseband signal onto a high-frequency carrier signal using envelope modulation technology to generate an RF modulated signal. The RF modulated signal is rectified and converted into two low-frequency DC signals, which are output to the two bases of the bidirectional BJT device. The pre-shutdown circuit includes: a first MOSFET, a second MOSFET, a third MOSFET, and a fourth MOSFET; the first terminal of the first MOSFET is connected to the first output terminal of the driving circuit, the second terminal of the first MOSFET is connected to the first base of the bidirectional BJT device, and the gate of the first MOSFET is connected to the processing circuit; the first terminal of the second MOSFET is connected to the collector of the bidirectional BJT device, the second terminal of the second MOSFET is connected to the first base of the bidirectional BJT device, and the gate of the second MOSFET is connected to the processing circuit; the first terminal of the third MOSFET is connected to the second output terminal of the driving circuit, the second terminal of the third MOSFET is connected to the second base of the bidirectional BJT device, and the gate of the third MOSFET is connected to the processing circuit; the first terminal of the fourth MOSFET is connected to the emitter of the bidirectional BJT device, the second terminal of the fourth MOSFET is connected to the second base of the bidirectional BJT device, and the gate of the fourth MOSFET is connected to the processing circuit; during the pre-shutdown phase, the first MOSFET and the third MOSFET are in an off state, and the second MOSFET and the fourth MOSFET are in a conducting state.

2. The drive circuit of the bidirectional BJT solid-state circuit breaker as described in claim 1, characterized in that, The detection unit includes: a current sensor, a temperature sensor, and an electromagnetic interference sensor; The current sensor is used to detect the collector current of the bidirectional BJT device; The temperature sensor is used to detect the temperature information of the bidirectional BJT device; The electromagnetic interference information used to detect the area where the bidirectional BJT device is located.

3. The drive circuit of the bidirectional BJT solid-state circuit breaker as described in claim 1, characterized in that, The microwave drive module includes: a radio frequency oscillator, a radio frequency modulator, and a radio frequency rectifier circuit; The radio frequency oscillator is used to generate the high-frequency carrier signal; The input terminal of the radio frequency modulator is connected to the radio frequency oscillator and the fuzzy controller respectively. The radio frequency modulator is used to convert the target control signal into the analog baseband signal and modulate it onto the high-frequency carrier signal to generate the radio frequency modulated signal. The RF rectifier circuit is connected to the output terminal of the RF modulator. The RF rectifier circuit is used to rectify the RF modulated signal and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

4. The drive circuit of the bidirectional BJT solid-state circuit breaker as described in claim 3, characterized in that, The radio frequency rectification circuit includes: a Wilkinson power divider and a radio frequency rectification unit; The input terminal of the Wilkinson power divider is connected to the output terminal of the radio frequency modulator. The Wilkinson power divider is used to distribute the power of the radio frequency modulated signal and output two power-divided signals. The radio frequency rectification unit is connected to the two output terminals of the Wilkinson power divider. The radio frequency rectification unit is used to rectify the two power divider signals respectively, and output two low-frequency DC signals to the two bases of the bidirectional BJT device respectively.

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