Manufacturing method and manufacturing equipment of film thermal printing head

Abstract

The invention relates to the field of etching processing, in particular to a manufacturing method and manufacturing equipment of a thin film thermal printing head, and the manufacturing equipment of the thin film thermal printing head comprises a vacuum chamber which is integrally cylindrical, the upper end of the vacuum chamber is provided with a cover plate, and the middle position of the vacuum chamber is provided with a separation cylinder; the vacuum chamber is divided into two spaces, a vapor deposition cavity is located between the side wall of the vacuum chamber and a separation cylinder, the space located in the separation cylinder is a plasma etching cavity, a machining column used for containing a thermal printing head is arranged on the separation cylinder, and a vapor deposition generation device is arranged in the vapor deposition cavity. And the plasma etching device is arranged in the plasma etching cavity, so that an effective protection effect can be formed on a wire electrode on the thermal printing head, the probability of short circuit is greatly reduced, the stability of the thermal printing head is improved, and the service life of the thermal printing head is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of etching processing, and in particular to a method and equipment for manufacturing a thin film thermal print head. Background Art

[0002] The wire electrodes of current thin-film thermal print heads are generally made of aluminum or aluminum alloy, which is a relatively soft material and easily crushed or scratched during the production process, causing short circuits and product rejection. Furthermore, since aluminum is a reactive metal, there is a risk of thermal migration and electromigration during use, both of which can cause short circuits and, in turn, failure of the thermal print head. Using harder metals as wire electrodes can significantly increase costs or increase wire resistance, resulting in lower effective power and poor printing quality. During the processing of thin-film thermal print heads, the basic wire electrodes need to be processed and laid out on the ceramic substrate first, and then the thermal material and other auxiliary components are connected. However, during this process, the traditional method is often not to treat the substrate surface, but this cannot effectively protect the wire electrodes. During the subsequent transportation and processing, it is easy to cause the electrode material to be crushed.

[0003] Existing widely used coating equipment widely uses vapor phase coating and etching after coating to process the required components. However, the existing equipment uses two machines to perform the two processes, and both processes need to be carried out in a near-vacuum environment, which leads to competition for processing equipment and increased processing costs.

[0004] In summary, the thin film thermal print head in the prior art is not well protected and is prone to damage and failure during transportation and processing. Summary of the Invention

[0005] The present invention provides a method for manufacturing a thin-film thermal print head. The method comprises covering the upper surface of a ceramic substrate with an insulating protective film, forming the film by vapor deposition, so that the thickness of the insulating protective film on both sides of a wire electrode is greater than the thickness on the front side of the wire electrode, and then performing plasma etching on the insulating protective film, so that the upper surface of the wire electrode that needs to be connected to the outside world is completely exposed. This method can effectively protect the wire electrode and prevent the wire electrode from expanding to both sides, greatly reducing the probability of short circuit, and helping to improve the stability and service life of the thermal print head.

[0006] The preparation method comprises the following steps: S1: After the patterning of the thin film print head wire electrode is completed, a layer of insulating protective film is covered on the surface of the ceramic substrate using vapor deposition technology, and the thickness of the insulating protective film must be greater than the thickness of the wire electrode; S2: Then, specific locations of the ceramic substrate are etched using plasma etching technology; S3: Specific positions are used for connection with external components, such as the position for connection with heat-sensitive materials, and the position for connection with external positive and negative poles, so that the wire electrodes at these positions are completely exposed.

[0007] The present invention also provides a device for manufacturing a thin film thermal print head, which is applicable to a method for manufacturing a thin film thermal print head, comprising: A vacuum chamber, wherein the vacuum chamber is cylindrical in shape as a whole, a cover is provided at the upper end of the vacuum chamber, and the vacuum chamber is provided with a port for vacuuming; A separation cylinder, which is fixedly connected to the middle position of the vacuum chamber and divides the vacuum chamber into two spaces: the space between the side wall of the vacuum chamber and the separation cylinder is the vapor deposition chamber, and the space inside the separation cylinder is the plasma etching chamber; A processing column, the processing column is rotatably connected to the separation cylinder and is evenly distributed along the circumference of the separation cylinder. The separation cylinder is slidably connected to a first sliding groove for clamping a thermal print head in the vertical direction; A vapor deposition generating device, wherein the vapor deposition generating device is arranged in the vapor deposition chamber; A plasma etching device is provided in a plasma etching chamber.

[0008] Preferably, the plasma etching device includes a plasma etching column, which is fixedly installed in the middle position of the separation cylinder. The plasma etching column is fixedly installed with a plasma jet corresponding one-to-one to the processing column, and the plasma etching column is fixedly installed with a plasma generator in the middle position of the corresponding plasma jet.

[0009] Preferably, a coil winding groove is opened in the side wall of the plasma jet channel, and an acceleration coil is wound on the coil winding groove.

[0010] Preferably, the acceleration coil is a multi-layer design, and a lateral outflow groove is processed at the position of the plasma jet between the multi-layer acceleration coils. An ion reflux chamber is formed at the position between the plasma jet, the separation tube and the plasma etching column, and the ion reflux chamber approximately forms a triangle with its pointed mouth facing the central axis of the plasma etching column.

[0011] Preferably, a power-off protection device is provided in the plasma etching column along the vertical direction, and the power-off protection device includes a vertical power-on frame, a radially movable frame, a vertical pull rope and a downward pressure spring. The vertical power-on frame is slidably connected to the middle position of the plasma etching column along the vertical direction, and the radially movable frame is slidably connected to the plasma jet along the radial direction of the plasma etching column. The upper end of the radially movable frame is fixedly connected to the vertical pull rope, and the vertical pull rope passes through the side wall of the plasma etching column and is fixedly connected to the upper end of the vertical power-on frame. A downward pressure spring is fixedly connected between the upper end of the vertical power-on frame and the side wall of the plasma etching column, and a power connection block that is in sliding contact with the vertical power-on frame is fixedly connected to the side wall of the plasma etching column.

[0012] Preferably, a circular flow shielding groove is opened on the outer side of the processing column, and an annular flow shielding cover is slidably connected to the flow shielding groove. The flow shielding cover is fixedly connected to the lower bottom plate of the vacuum chamber. The flow shielding cover corresponds to the plasma nozzle, and the flow shielding cover can be processed with a through groove according to actual needs.

[0013] Preferably, the vapor deposition generating device includes a positive electrode connector, a negative electrode connector and a generating dish, the positive electrode connector is connected to the positive pole of the power supply, the negative electrode connector is connected to the negative pole of the power supply, the two ends of the generating dish are respectively connected to the positive electrode connector and the negative electrode connector, and the generating dish is fixedly mounted on the vacuum chamber by insulating material.

[0014] Preferably, the positive electrode connector is slidably connected to a generating dish, the generating dish is in an elongated shape, and a scale is machined on the generating dish.

[0015] Preferably, the lower end of each processing column is fixedly connected to a first cooperating gear, and all the first cooperating gears are commonly engaged with a second cooperating gear, and the second cooperating gear is rotatably connected to the lower bottom end of the vacuum chamber.

[0016] Beneficial effects: The present invention uses vapor deposition technology to cover the surface of a ceramic substrate with an insulating protective film, and the thickness of the insulating protective film is greater than the thickness of the wire electrode. Subsequently, specific positions of the ceramic substrate are etched using plasma etching technology to expose the wires at the specific positions. This can effectively protect the wire electrodes and prevent the wire electrodes from expanding to both sides, greatly reducing the probability of short circuits and helping to improve the stability and service life of the thermal print head.

[0017] The present invention uses a vapor deposition generating device to heat the material to be coated on the thin film thermal print head to an evaporating state. The evaporated material will condense on the surface of the thin film thermal print head when it encounters the thin film thermal print head. After the vapor deposition coating is completed, the upper cover plate is opened to remove the thermal print head, and then a shielding film is affixed to the position of the thermal print head that does not need to be etched. The thermal print head is then placed in the first slide groove, and then the cover plate is re-covered to the upper end of the vacuum chamber, and the air in the vacuum chamber is extracted to make it in a state of approximate vacuum. After that, the processing column can be driven to rotate by a driving device such as a motor, and the processing column is rotated so that the first slide groove faces the plasma etching device. Then, the surface of the thermal print head is etched by the plasma etching device. Since the vapor deposition coating and plasma etching both occur in the same device, only a device that can generate a vacuum environment needs to be established, which can greatly reduce the cost.

[0018] The present invention allows a portion of ions to enter the ion return chamber through the lateral outflow slot, and the direction of the electromagnetic field in the ion return chamber is opposite to the direction of the electromagnetic field in the plasma jet. At this time, under the action of the electromagnetic field, the ions will move in the opposite direction and re-enter the plasma jet through the lateral outflow slot. The ion return chamber approximately forms a triangle with a pointed mouth facing the central axis of the plasma etching column, thereby generating a moving convergence effect, making it easier for the ions to flow back into the plasma jet, which can greatly reduce the consumption of plasma.

[0019] The present invention rotates the processing column to turn the thin film thermal print head towards the direction of the plasma jet, and the plasma in the plasma jet will etch the surface of the thin film thermal print head through the through slot on the flow shield. The distance between the through slot on the flow shield and the surface of the thin film thermal print head is very close, so the ions bombarding the thin film thermal print head basically move in a straight line, which can ensure the accuracy of etching. In this way, the two processes of vapor deposition coating and plasma etching can be carried out without removing the thermal print head, further reducing labor costs and improving work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic diagram of the appearance of the present invention; Figure 2 This is a schematic diagram of the internal structure of the present invention after removing the cover plate; Figure 3 for Figure 2 Schematic diagram of the local enlarged structure at A in the middle; Figure 4 for Figure 2 Schematic diagram of the local enlarged structure at B in the middle; Figure 5This is a top view of the first chute facing the vapor deposition chamber in the present invention; Figure 6 It is a top view schematic cross-sectional view of the first chute facing the plasma etching chamber in the present invention; Figure 7 This is a schematic diagram of the collaborative meshing in the present invention; Figure 8 It is a structural schematic diagram of the plasma etching device of the present invention; Figure 9 for Figure 8 A schematic diagram of the partially enlarged structure at point C in the middle; Figure 10 for Figure 8 The schematic diagram of the local enlarged structure at D in the middle; Figure 11 It is a structural schematic diagram of the flow shield in the present invention.

[0021] Description of reference numerals: 1. Vacuum chamber; 11. Vapor deposition chamber; 12. Plasma etching chamber; 2. Separation cylinder; 3. Processing column; 31. First slide chute; 32. Flow shielding chute; 33. Flow shielding cover; 34. First cooperative gear; 35. Second cooperative gear; 4. Vapor deposition generating device; 41. Positive electrode connector; 42. Negative electrode connector; 43. Generator dish; 5. Plasma etching device; 51. Plasma etching column; 511. Power connection block; 52. Plasma jet; 521. Coil winding groove; 522. Lateral outflow groove; 53. Plasma generator; 54. Accelerating coil; 6. Ion reflux chamber; 8. Power-off protection device; 81. Vertical power supply frame; 82. Radial moving frame; 83. Vertical pull rope; 84. Downward pressure spring. DETAILED DESCRIPTION

[0022] The specific embodiments of the present invention are described in detail below, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0023] The present invention provides a method for manufacturing a thin film thermal print head, comprising the following steps: S1: After the patterning of the thin film print head wire electrode is completed, a layer of insulating protective film is covered on the surface of the ceramic substrate using vapor deposition technology, and the thickness of the insulating protective film must be greater than the thickness of the wire electrode; S2: Then, specific locations of the ceramic substrate are etched using plasma etching technology; S3: Specific positions are used for connection with external components, such as the position for connection with heat-sensitive materials, and the position for connection with external positive and negative poles, so that the wire electrodes at these positions are completely exposed.

[0024] It should be noted that the above method can effectively protect the wire electrodes, prevent the wire electrodes from expanding to both sides, and prevent damage to the electrode materials during transportation and subsequent processing, greatly reducing the probability of short circuits and helping to improve the stability and service life of the thermal print head.

[0025] like Figures 1 to 11 As shown, the present invention provides a device for manufacturing a thin film thermal print head, comprising: A vacuum chamber 1, wherein the vacuum chamber 1 is cylindrical in shape as a whole, a cover is provided at the upper end of the vacuum chamber 1, and the vacuum chamber 1 is provided with a port for vacuuming; A separation cylinder 2 is fixedly connected to the middle position of the vacuum chamber 1, which divides the vacuum chamber 1 into two spaces. The space between the side wall of the vacuum chamber 1 and the separation cylinder 2 is a vapor deposition chamber 11, and the space inside the separation cylinder 2 is a plasma etching chamber 12; A processing column 3 is rotatably connected to the wall of the separation cylinder 2. A plurality of processing columns 3 are evenly distributed along the circumference of the separation cylinder 2. The separation cylinder 2 is vertically slidably connected to a first slide groove 31 for receiving a thermal print head. The first slide groove 31 extends outward along the radial return of the processing column 3. A vapor deposition device 4 is provided in the vapor deposition chamber 11; The plasma etching device 5 is arranged in the plasma etching chamber 12 .

[0026] It should be noted that, in the process of processing the thin film thermal print head, the cover plate at the upper end of the vacuum chamber 1 is first opened, and then the thin film thermal print heads are inserted into the first slide 31 in a row, and then the cover plate is covered to the upper end of the vacuum chamber 1. At this time, the first slide 31 is facing the vapor deposition chamber 11, and the air in the vacuum chamber 1 is extracted to make it in a state close to vacuum. At this time, the vapor deposition generating device will heat the material to be coated on the thin film thermal print head to an evaporating state, and the evaporated material will condense on the thin film thermal print head when it encounters the thin film thermal print head. Surface, after completing the vapor deposition coating, open the upper cover and take out the thermal print head, then stick a shielding film on the position of the thermal print head that does not need to be etched, and then put the thermal print head into the first slide groove 31, and then put the cover back on the upper end of the vacuum chamber 1, and then extract the air in the vacuum chamber 1 to make it in a state of near vacuum, and then the driving device such as a motor can be used to drive the rotation of the processing column 3, and the processing column 3 is rotated so that the first slide groove 31 faces the plasma etching device 5, and then the plasma etching device 5 is used to etch the surface of the thermal print head.

[0027] With the above-mentioned device, since vapor deposition coating and plasma etching both occur in the same device, only one device that can generate a vacuum environment needs to be established, which can greatly reduce costs.

[0028] like Figure 2 、 Figure 4 and Figure 8 As shown, the plasma etching device 5 includes a plasma etching column 51, which is fixedly installed in the middle position of the separation cylinder 2. The plasma etching column 51 is fixedly installed with a plasma jet 52 corresponding one-to-one to the processing column 3, and the plasma etching column 51 is fixedly installed with a plasma generator 53 in the middle position of the corresponding plasma jet 52.

[0029] It should be noted that, during the etching process of the thermal print head by the plasma etching device 5, plasma is emitted by the plasma generator 53. The plasma generator 53 can adopt the existing plasma generation technology. The plasma will impact the surface of the thermal print head along the plasma nozzle 52. At this time, the position on the surface of the thermal print head where the shielding film is not affixed will be directly bombarded by the plasma. At this time, the atoms on the protective film formed by vapor deposition will be directly bombarded, or combined with the ions in the plasma to form compounds and evaporated until the electrode circuit is exposed on the surface of the thermal print head.

[0030] like Figure 4 、 Figure 8 and Figure 9 As shown, a coil winding groove 521 is opened in the side wall of the plasma jet channel 52 , and an acceleration coil 54 is wound on the coil winding groove 521 .

[0031] It should be noted that by passing a large DC current through the acceleration coil 54, a directional electromagnetic field can be generated in the plasma jet 52, thereby accelerating the ions and making the ions faster, thereby generating a stronger bombardment ability, thereby increasing the etching speed of the thin film thermal print head surface.

[0032] like Figure 4 and Figure 9 As shown, the acceleration coil 54 is a multi-layer design, and a lateral outflow groove 522 is processed at the position of the plasma jet 52 between the multi-layer acceleration coils 54. An ion reflux chamber 6 is formed at the position between the plasma jet 52, the separation tube 2 and the plasma etching column 51. The ion reflux chamber 6 is approximately formed into a triangle with its pointed mouth facing the central axis of the plasma etching column 51.

[0033] It should be noted that after completing the etching bombardment of the thin film thermal head, the ions will move in all directions. During the processing, ions of the same charge will also produce repulsion. Through the lateral outflow slot 522, a part of the ions enter the ion reflux chamber 6. The direction of the electromagnetic field in the ion reflux chamber 6 is opposite to the direction of the electromagnetic field in the plasma jet 52. At this time, under the action of the electromagnetic field, the ions will move in the opposite direction and re-enter the plasma jet 52 through the lateral outflow slot 522. The ion reflux chamber 6 approximately forms a triangle with its pointed mouth facing the central axis of the plasma etching column 51, thereby producing a moving convergence effect, making it easier for the ions to flow back into the plasma jet 52, which can greatly reduce the consumption of plasma.

[0034] like Figure 4 、 Figure 8 、 Figure 9 and Figure 10 As shown, a power-off protection device 8 is provided in the plasma etching column 51 along the vertical direction, and the power-off protection device 8 includes a vertical power-on frame 81, a radially movable frame 82, a vertical pull rope 83 and a downward pressure spring 84. The vertical power-on frame 81 is slidably connected to the middle position of the plasma etching column 51 along the vertical direction, and the radially movable frame 82 is slidably connected to the plasma jet 52 along the radial direction of the plasma etching column 51. The upper end of the radially movable frame 82 is fixedly connected to the vertical pull rope 83, and the vertical pull rope 83 passes through the side wall of the plasma etching column 51 and is fixedly connected to the upper end of the vertical power-on frame 81. A downward pressure spring 84 is fixedly connected between the upper end of the vertical power-on frame 81 and the side wall of the plasma etching column 51, and a power connection block 511 that is in sliding contact with the vertical power-on frame 81 is fixedly connected to the side wall of the plasma etching column 51.

[0035] It should be noted that during the plasma etching process, although the plasma exhibits anisotropic etching characteristics, if the etching intensity is too high or the etching time is too long, side over-etching will still occur. When current flows through the acceleration coil 54, the acceleration coil 54 will generate a magnetic field, thereby promoting the movement of the radial moving frame 82 (the radial moving frame 82 is made of magnetic material). The radial moving frame 82 will pull the vertical power frame 81 through the vertical pull rope 83, and the downward pressure spring 84 will be compressed. When the current is too large, the magnetic field is also strong, and the pulling force generated by the radial moving frame 82 is also relatively strong. At this time, the vertical power frame 81 will be separated from the power block 511, causing the circuit to be powered off, thereby reducing the intensity of plasma etching.

[0036] like Figure 3 、 Figure 4 and Figure 11As shown, a circular flow shielding groove 32 is provided on the outer side of the processing column 3, and a ring-shaped flow shielding cover 33 is slidably connected to the flow shielding groove 32. The flow shielding cover 33 is fixedly connected to the lower bottom plate of the vacuum chamber 1. The flow shielding cover 33 corresponds to the plasma nozzle 52, and the flow shielding cover 33 can be processed with a through groove according to actual needs.

[0037] After completing the vapor deposition process on the surface of the thin film thermal print head, the thin film thermal print head is turned toward the direction of the plasma jet 52 by rotating the processing column 3, and the plasma in the plasma jet 52 will etch the surface of the thin film thermal print head through the through groove on the flow shield 33. The distance between the through groove on the flow shield 33 and the surface of the thin film thermal print head is very close, so the ions bombarding the thin film thermal print head basically move in a straight line, which can ensure the accuracy of etching. In this way, the vapor deposition coating and plasma etching processing can be carried out without removing the thermal print head, further reducing labor costs and improving work efficiency.

[0038] like Figure 5 As shown, the vapor deposition generating device 4 includes a positive electrode connector 41, a negative electrode connector 42 and a generating dish 43. The positive electrode connector 41 is connected to the positive pole of the power supply, and the negative electrode connector 42 is connected to the negative pole of the power supply. The two ends of the generating dish 43 are respectively connected to the positive electrode connector 41 and the negative electrode connector 42. The generating dish 43 is fixedly mounted on the vacuum chamber by insulating material.

[0039] It should be noted that during the vapor deposition reaction, vapor deposition materials are added to the generating dish 43, and a strong current is passed through the generating dish 43 through the positive electrode connector 41 and the negative electrode connector 42. In this way, the generating dish 43 will generate high temperature, thereby causing the vapor deposition material to evaporate, and then vapor deposition is performed on the surface of the thin film thermal print head to produce a protective film.

[0040] The positive electrode connector 41 is slidably connected to a generating dish 43 . The generating dish 43 is in a long strip shape and has scales machined on it.

[0041] It should be noted that by connecting the positive electrode connector 41 to different positions of the generating dish 43, the generating dish 43 can be filled with different amounts of vapor deposition material, so that the required amount of vapor deposition material can be conveniently added according to actual needs.

[0042] like Figure 7 As shown, the lower end of each processing column 3 is fixedly connected to a first cooperating gear 34 , and all the first cooperating gears 34 are engaged with a second cooperating gear 35 , which is rotatably connected to the lower bottom end of the vacuum chamber 1 .

[0043] It should be noted that during use, a motor drives the rotation of a first cooperating gear 34, which in turn drives the rotation of the second cooperating gear 35. The second cooperating gear 35 drives the rotation of the remaining first cooperating gears 34. The first cooperating gear 34 drives the rotation of the processing column 3, thereby achieving the purpose of being able to drive all the processing columns 3 to rotate through one driving source.

[0044] The above disclosures are only a few specific embodiments of the present invention. However, the embodiments of the present invention are not limited thereto. Any changes that can be conceived by those skilled in the art should fall within the scope of protection of the present invention.

Claims

1. A method for manufacturing a thin film thermal print head, characterized in that: After the patterning of the wire electrodes of the thin film print head is completed, a layer of insulating protective film is covered on the surface of the ceramic substrate using vapor deposition technology, and the thickness of the insulating protective film is greater than the thickness of the wire electrodes. Subsequently, the specific positions of the ceramic substrate are etched using plasma etching technology. The specific positions are used to connect with external components, such as the positions for connecting with heat-sensitive materials and the positions for connecting with external positive and negative poles, so that the wire electrodes at these positions are completely exposed.

2. A device for manufacturing a thin film thermal print head, characterized in that: The method for manufacturing a thin film thermal print head according to claim 1 comprises: A vacuum chamber (1), wherein the vacuum chamber (1) is cylindrical in shape as a whole, a cover plate is provided at the upper end of the vacuum chamber (1), and the vacuum chamber (1) is provided with a port for vacuuming; A separation cylinder (2), the separation cylinder (2) being fixedly connected to a middle position of the vacuum chamber (1), and dividing the vacuum chamber (1) into two spaces, the position between the side wall of the vacuum chamber (1) and the separation cylinder (2) being a vapor deposition chamber (11), and the space within the separation cylinder (2) being a plasma etching chamber (12); A processing column (3), wherein the processing column (3) is rotatably connected to the separation cylinder (2) and a plurality of processing columns (3) are evenly distributed along the circumference of the separation cylinder (2); the separation cylinder (2) is slidably connected in the vertical direction to a first slide groove (31) for clamping a thermal print head; A vapor deposition generating device (4), wherein the vapor deposition generating device (4) is arranged in a vapor deposition chamber (11); A plasma etching device (5) is provided in a plasma etching chamber (12).

3. The device for manufacturing a thin film thermal print head according to claim 2, characterized in that: The plasma etching device (5) comprises a plasma etching column (51), the plasma etching column (51) being fixedly mounted at a middle position of the separation cylinder (2), the plasma etching column (51) being fixedly mounted with plasma jets (52) corresponding one to one with the processing columns (3), and the plasma etching column (51) being fixedly mounted with a plasma generator (53) at a middle position corresponding to the plasma jets (52).

4. The device for manufacturing a thin film thermal print head according to claim 3, characterized in that: A coil winding groove (521) is provided in the side wall of the plasma jet channel (52), and an acceleration coil (54) is wound on the coil winding groove (521).

5. The device for manufacturing a thin film thermal print head according to claim 4, characterized in that: The accelerating coil (54) is designed as a multi-layer structure. A lateral outflow groove (522) is machined at the position of the plasma jet (52) between the multi-layer accelerating coils (54). An ion return chamber (6) is formed at the position between the plasma jet (52), the separation cylinder (2) and the plasma etching column (51). The ion return chamber (6) is approximately formed into a triangle with its tip facing the central axis of the plasma etching column (51).

6. A device for manufacturing a thin film thermal print head according to claim 4 or 5, characterized in that: A power-off protection device (8) is provided in the plasma etching column (51) along the vertical direction. The power-off protection device (8) comprises a vertical power-on frame (81), a radially movable frame (82), a vertical pull rope (83) and a downward pressure spring (84). The vertical power-on frame (81) is slidably connected to the middle position of the plasma etching column (51) along the vertical direction. The radially movable frame (82) is slidably connected to the plasma jet channel (52) along the radial direction of the plasma etching column (51). The upper end of the radial moving frame (82) is fixedly connected to a vertical pull rope (83), the vertical pull rope (83) passes through the side wall of the plasma etching column (51) and is fixedly connected to the upper end of the vertical power frame (81), a downward pressure spring (84) is fixedly connected between the upper end of the vertical power frame (81) and the side wall of the plasma etching column (51), and a power connection block (511) that is in sliding contact with the vertical power frame (81) is fixedly connected to the side wall of the plasma etching column (51).

7. The device for manufacturing a thin film thermal print head according to any one of claims 3 to 5, characterized in that: The outer side of the processing column (3) is provided with an annular flow shielding groove (32), and an annular flow shielding cover (33) is slidably connected in the flow shielding groove (32). The flow shielding cover (33) is fixedly connected to the lower bottom plate of the vacuum chamber (1), and the flow shielding cover (33) corresponds to the plasma jet (52). The flow shielding cover (33) can be processed with a through groove according to actual needs.

8. The device for manufacturing a thin film thermal print head according to claim 2, characterized in that: The vapor deposition generating device (4) comprises a positive electrode connector (41), a negative electrode connector (42) and a generating dish (43), wherein the positive electrode connector (41) is connected to the positive electrode of a power supply, the negative electrode connector (42) is connected to the negative electrode of a power supply, and the two ends of the generating dish (43) are respectively connected to the positive electrode connector (41) and the negative electrode connector (42), and the generating dish (43) is fixedly mounted on the vacuum chamber (1) by means of insulating material.

9. The device for manufacturing a thin film thermal print head according to claim 8, characterized in that: The positive electrode connector (41) is slidably connected to a generating dish (43). The generating dish (43) is in a long strip shape and has scales machined on it.

10. The device for manufacturing a thin film thermal print head according to claim 2, characterized in that: The lower end of each processing column (3) is fixedly connected to a first cooperative gear (34), and all the first cooperative gears (34) are engaged with a second cooperative gear (35). The second cooperative gear (35) is rotatably connected to the lower bottom end of the vacuum chamber (1).

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