Method for detecting ion implantation blocking capability of light resistor

Abstract

A method for detecting the capability of blocking ion implantation by a photoresist comprises the following steps: providing a substrate; forming a detection layer on the substrate; forming a photoresist layer on the detection layer, wherein the thicknesses of the photoresist layer are different in different areas; performing ion implantation processing on the photoresist layer; removing the photoresist layer; performing wet etching treatment on the detection layer; and based on the reaction of the detection layer to the wet etching treatment, judging the capability of blocking ion implantation of the photoresist layer. The detection method is simple and easy to operate, and the detection cost is low.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a method for detecting the ability of a photoresist to block ion implantation. Background Art

[0002] Ion implantation is a doping technique for semiconductor materials, offering advantages such as low-temperature doping, easy masking, precise dose control, and high uniformity. It is used in multiple process steps, such as source / drain doping, channel doping, and lightly doped drain doping, resulting in semiconductor devices with high speed, low power consumption, excellent stability, and high yield. Different ion implantation processes require different energy doses and other conditions, and ion implantation is performed in designated areas, while other locations require masking with a barrier layer such as photoresist. Photoresist barrier layers of varying thickness offer varying resistance to ion implantation. Too thin a thickness allows ions to easily penetrate the barrier layer, while too thick a layer makes it difficult to control critical dimensions during photolithography. This necessitates the use of a photoresist layer of appropriate thickness during the implantation process. Summary of the Invention

[0003] The problem solved by the embodiments of the present invention is to provide a method for detecting the ability of a photoresist to block ion implantation. The detection method is relatively simple and easy to operate, and has a low detection cost.

[0004] To solve the above problems, an embodiment of the present invention provides a method for detecting the ability of a photoresist to block ion injection, comprising: providing a substrate; forming a detection layer on the substrate; forming a photoresist layer on the detection layer, wherein the thickness of the photoresist layer varies in different areas; performing ion implantation on the photoresist layer; removing the photoresist layer; performing wet etching on the detection layer; and judging the ability of the photoresist layer to block ion injection based on the reaction of the detection layer to the wet etching.

[0005] Optionally, in the step of forming the detection layer on the substrate, the material of the detection layer includes silicon oxide or silicon oxynitride.

[0006] Optionally, in the step of performing wet etching on the detection layer, an etching solution for the wet etching includes hydrofluoric acid or phosphoric acid.

[0007] Optionally, in the step of forming the detection layer on the substrate, the thickness of the detection layer is equal in different areas.

[0008] Optionally, in the step of forming a detection layer on the substrate, the detection layer has a thickness of 50 nm to 100 nm.

[0009] Optionally, in the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually changes along a preset direction.

[0010] Optionally, in the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually changes in a gradient along a preset direction.

[0011] Optionally, in the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually increases from the middle area to the edge area, or the thickness of the photoresist layer gradually decreases from the middle area to the edge area.

[0012] Optionally, in the step of forming a photoresist layer on the detection layer, the material of the photoresist layer includes photoresist.

[0013] Optionally, based on the reaction of the detection layer to the wet etching treatment, the step of obtaining a characterization of the ability of the photoresist layer to block ion injection includes: obtaining the thickness of the detection layer removed by the wet etching treatment in different areas as a first detection thickness; obtaining the area where the detection layer is located where the first detection thickness is less than or equal to the first preset thickness, as a qualified area; obtaining the photoresist layer corresponding to the qualified area, as a photoresist layer that meets the standard for the ability to block ion injection.

[0014] Optionally, based on the reaction of the detection layer to the wet etching treatment, the step of obtaining a characterization of the ability of the photoresist layer to block ion injection includes: obtaining the thickness of the remaining detection layer in different areas after the wet etching treatment as a second detection thickness; obtaining the area where the detection layer is located where the second detection thickness is greater than or equal to the second preset thickness as a qualified area; obtaining the photoresist layer corresponding to the qualified area as the photoresist layer that meets the standard for blocking ion injection.

[0015] Optionally, based on the reaction of the detection layer to the wet etching treatment, the step of obtaining a characterization of the ability of the photoresist layer to block ion injection includes: obtaining the etching rate of the detection layer in different areas under the wet etching treatment; obtaining the area of ​​the detection layer where the etching rate is less than or equal to the preset etching rate as the qualified area; obtaining the photoresist layer corresponding to the qualified area as the photoresist layer with the qualified ability to block ion injection.

[0016] Optionally, in the step of wet etching the detection layer, the detection layer is retained in the region where the thickness of the photoresist layer is minimum.

[0017] Optionally, after forming a photoresist layer on the detection layer, the method further includes: measuring the thickness of the photoresist layer in different areas; obtaining the photoresist layer corresponding to the qualified area as the photoresist layer that meets the standard for blocking ion injection, the step includes: obtaining the minimum value of the thickness of the photoresist layer corresponding to the qualified area; obtaining a thickness greater than or equal to the minimum value as the qualified thickness of the photoresist layer for blocking ion injection.

[0018] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0019] In the method for detecting the ion injection blocking ability of a photoresist provided by an embodiment of the present invention, a detection layer is formed on a substrate, and a photoresist layer is formed on the detection layer. The thickness of the photoresist layer varies in different regions. The photoresist layer is subjected to ion implantation, the photoresist layer is removed, and the detection layer is subjected to wet etching. Based on the reaction of the detection layer to the wet etching, the ability of the photoresist layer to block ion implantation is determined. In the embodiment of the present invention, the thickness of the photoresist layer varies in different regions, that is, the detection layers in different regions are provided with photoresist layers of different thicknesses. The photoresist layers of different thicknesses have different blocking effects on the ion injection. Therefore, a single ion implantation process can be performed on one substrate, and the ion implantation process can be performed simultaneously. Testing photoresist layers of different thicknesses reduces testing costs and testing time, and is beneficial to shortening the testing cycle. Moreover, since the charge from the ion implantation process has a catalytic effect on the wet etching process, when the photoresist layer has a better blocking effect, the charge in the detection layer is less, and the detection layer reacts less to the wet etching process. When the corresponding photoresist layer has a poorer blocking effect, the charge in the detection layer is more, and the detection layer reacts more to the wet etching process. Therefore, based on the different reactions of the detection layer to the wet etching process, it can be judged whether the photoresist layer of corresponding thickness above the detection layer has a better blocking ability to the ion implantation process. The detection method is relatively simple and easy to operate, and the detection cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a flow chart of a method for testing the ability of a photoresist to block ion implantation;

[0021] Figure 2 It is a flow chart of an embodiment of a method for detecting the ability of a photoresist to block ion implantation according to the present invention;

[0022] Figures 3 to 8 1 is a schematic diagram corresponding to each step in an embodiment of a method for detecting the ability of a photoresist to block ion implantation according to the present invention. DETAILED DESCRIPTION

[0023] Currently, testing the ability of photoresist to block ion implantation is complex and costly. This paper analyzes the reasons why testing is complex and costly, using a method for testing the ability of photoresist to block ion implantation.

[0024] Figure 1 The present invention is a flow chart of a method for detecting the ability of a photoresist to block ion implantation.

[0025] refer to Figure 1 , the detection methods of photoresist's ability to block ion implantation include:

[0026] Executing step s1: providing a plurality of test silicon wafers;

[0027] Executing step s2: coating photoresist layers of different thicknesses on different test silicon wafers;

[0028] Executing step s3: measuring the thickness of the photoresist layer on each test silicon wafer;

[0029] Executing step s4: implanting ions of determined energy into a test silicon wafer coated with a photoresist layer of different thicknesses;

[0030] Executing step s5: removing the photoresist layer of each test silicon wafer;

[0031] Execute step s6: Use secondary ion mass spectrometry to test each test silicon wafer to obtain the ion quantity of each test silicon wafer. When the ion quantity on the test silicon wafer is within the allowable range, it is considered that the thickness of the photoresist layer corresponding to the test silicon wafer with this ion quantity is appropriate; otherwise, it is considered that the thickness of the photoresist layer corresponding to the test silicon wafer with this ion quantity is inappropriate.

[0032] Currently, multiple test silicon wafers are required to coat photoresist layers of different thicknesses on different test silicon wafers in order to test the ion injection blocking ability of the photoresist layers of different thicknesses. This results in the need to test the ion quantity of as many test silicon wafers as possible one by one. On the one hand, this method requires a large number of expensive test silicon wafers, and on the other hand, secondary ion mass spectrometry is a very expensive testing method and requires a lot of testing time. Therefore, the detection is relatively complicated and costly.

[0033] In order to solve the above technical problems, an embodiment of the present invention provides a method for detecting the ability of a photoresist to block ion implantation. Figure 2 , shows a flow chart of an embodiment of a method for detecting the ability of a photoresist to block ion implantation according to the present invention.

[0034] In this embodiment, the method for detecting the ability of a photoresist to block ion implantation includes the following steps:

[0035] Step S1: providing a substrate;

[0036] Step S2: forming a detection layer on the substrate;

[0037] Step S3: forming a photoresist layer on the detection layer, wherein the thickness of the photoresist layer varies in different areas;

[0038] Step S4: performing ion implantation on the photoresist layer;

[0039] Step S5: removing the photoresist layer;

[0040] Step S6: wet etching the detection layer;

[0041] Step S7: judging the ability of the photoresist layer to block ion implantation based on the response of the detection layer to the wet etching process.

[0042] In an embodiment of the present invention, the thickness of the photoresist layer is different in different areas, that is, the detection layers in different areas are arranged with photoresist layers of different thicknesses. The photoresist layers of different thicknesses have different blocking effects on ion implantation. Therefore, photoresist layers of different thicknesses can be detected simultaneously on one substrate through one ion implantation process, which reduces the detection cost and detection time and is conducive to shortening the detection cycle. Moreover, since the charge of the ion implantation process has a catalytic effect on the wet etching process, when the blocking effect of the photoresist layer is better, the charge in the detection layer is less, and the detection layer reacts weakly to the wet etching process. When the blocking effect of the corresponding photoresist layer is poor, the charge in the detection layer is more, and the detection layer reacts strongly to the wet etching process. Therefore, based on the different reactions of the detection layer to the wet etching process, it can be judged whether the photoresist layer of corresponding thickness above the detection layer has a good blocking ability to the ion implantation process. The detection method is relatively simple and easy to operate, and the detection cost is low.

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0044] Figures 3 to 8 1 is a schematic diagram corresponding to each step in an embodiment of a method for detecting the ability of a photoresist to block ion implantation according to the present invention.

[0045] refer to Figure 3 , perform step S1: provide a substrate 100.

[0046] The substrate 100 is an operating platform for testing the ability of photoresist to block ion implantation.

[0047] In this embodiment, the substrate 100 is a wafer.

[0048] refer to Figure 4 , executing step S2: forming a detection layer 200 on the substrate 100.

[0049] The ability of the photoresist to block ion implantation is subsequently evaluated based on the detection layer 200 .

[0050] In this embodiment, in the step of forming the detection layer 200 on the substrate 100 , the material of the detection layer 200 includes silicon oxide or silicon oxynitride.

[0051] Silicon oxide or silicon oxynitride is easy to obtain and has low cost in the semiconductor manufacturing field, so it is easy to form the detection layer 200. Moreover, the charge has a particularly catalytic effect on the wet etching treatment of silicon oxide or silicon oxynitride, which is beneficial for the subsequent judgment of the ability of the photoresist to block ion injection based on the reaction of the detection layer 200 formed by silicon oxide or silicon oxynitride to the wet etching treatment.

[0052] In this embodiment, in the step of forming the detection layer 200 on the substrate 100 , the thickness of the detection layer 200 is equal in different areas.

[0053] The thickness of the detection layer 200 is equal in different areas, that is, the initial thickness of the detection layer 200 is kept uniform, so that the ability of the photoresist to block ion injection can be judged based on the remaining thickness of the detection layer 200 in different areas after wet etching the detection layer 200.

[0054] In this embodiment, in the step of forming the detection layer 200 on the substrate 100 , the thickness of the detection layer 200 is 50 nm to 100 nm.

[0055] The thickness of the detection layer 200 is 50nm to 100nm, so that the detection layer 200 has sufficient thickness so that after the detection layer 200 is subsequently wet-etched, the detection layer 200 in each area will not be completely removed, and at the same time, it will not cause excessive material waste in the thickness of the detection layer 200.

[0056] refer to Figure 5 , executing step S3: forming a photoresist layer 300 on the detection layer 200, wherein the thickness of the photoresist layer 300 is different in different areas.

[0057] The photoresist layer 300 is used to cover areas where ion implantation is not required during ion implantation to block ion implantation. Photoresist layers 300 of different thicknesses have different blocking capabilities. A thicker photoresist layer 300 has a stronger ability to block ion implantation. The thickness of the photoresist layer 300 varies in different areas. Therefore, photoresist layers 300 with different blocking capabilities can be inspected simultaneously on the same inspection layer 200. That is, a single wafer can be used to simultaneously inspect photoresist layers 300 with different blocking capabilities.

[0058] In this embodiment, in the step of forming the photoresist layer 300 on the detection layer 200 , the thickness of the photoresist layer 300 gradually changes along a preset direction.

[0059] The thickness of the photoresist layer 300 gradually changes along a preset direction, which means that the thickness of the photoresist layer 300 gradually increases or decreases along the preset direction.

[0060] The thickness of the photoresist layer 300 changes gradually along a preset direction, so the thickness of the photoresist layer 300 changes regularly, which is beneficial to improving the accuracy of subsequent detection of the blocking ability of the photoresist layer 300.

[0061] In this embodiment, in the step of forming the photoresist layer 300 on the detection layer 200 , the thickness of the photoresist layer 300 gradually changes in a gradient along a preset direction.

[0062] The thickness of the photoresist layer 300 gradually changes along a preset direction in a gradient manner, which means that the thickness of the photoresist layer 300 gradually increases or decreases along the preset direction in a gradient manner.

[0063] The thickness of the photoresist layer 300 changes gradually along a predetermined direction in a gradient manner. Each thickness of the photoresist layer 300 has a specific area. This helps increase the detection window for subsequent thickness measurements of the photoresist layer 300 and testing the ion implantation blocking ability of the photoresist layer 300 at different thicknesses, thereby improving the accuracy of subsequent testing of the blocking ability of the photoresist layer 300.

[0064] As an example, in this embodiment, in the step of forming the photoresist layer 300 on the detection layer 200 , the thickness of the photoresist layer 300 gradually decreases from the middle area to the edge area.

[0065] The thickness of the photoresist layer 300 gradually decreases from the middle area to the edge area. The thickness distribution of the photoresist layer 300 is relatively uniform, which makes it easy to test the ability of the photoresist layer 300 of different thicknesses to block ion injection, thereby improving the accuracy of subsequent testing of the blocking ability of the photoresist layer 300.

[0066] In other embodiments, in the step of forming the photoresist layer on the detection layer, the thickness of the photoresist layer may gradually increase from the middle area to the edge area.

[0067] As an example, in this embodiment, in the step of forming the photoresist layer 300 on the detection layer 200 , the material of the photoresist layer 300 includes photoresist.

[0068] In this embodiment, after the photoresist layer 300 is formed on the detection layer 200 , the method further includes: measuring the thickness of the photoresist layer 300 in different areas.

[0069] The thickness of the photoresist layer 300 in different regions is measured. The thicker the photoresist layer 300 is, the stronger its blocking ability to ion implantation is.

[0070] refer to Figure 6 , executing step S4: performing ion implantation on the photoresist layer 300 .

[0071] The photoresist layer 300 is subjected to ion implantation treatment to detect the blocking ability of the photoresist layer 300 to ion implantation. If the photoresist layer 300 has a strong blocking ability, it can better block ions from entering the detection layer 200. If the photoresist layer 300 has an insufficient blocking ability, it will cause excessive ions to be implanted into the detection layer 200.

[0072] In this embodiment, the photoresist layer 300 is subjected to ion implantation. Under the same ion implantation parameters, the photoresist layers 300 of different thicknesses are simultaneously implanted with ion implantation. That is, under the quantitative ion implantation, the ability of the photoresist layers 300 of different thicknesses to block the ion implantation is simultaneously tested.

[0073] refer to Figure 7 , executing step S5: removing the photoresist layer 300 .

[0074] The photoresist layer 300 is removed to expose the surface of the detection layer 200 in preparation for subsequent wet etching of the detection layer 200 .

[0075] refer to Figure 8 , executing step S6: performing wet etching on the detection layer 200 .

[0076] During ion implantation, ions pass through the photoresist layer 300 and enter the detection layer 200. Since the charges from the ion implantation catalyze the wet etching process, when the photoresist layer 300 has a better blocking effect, the charges in the detection layer 200 are less, and the detection layer 200 reacts less to the wet etching process. Correspondingly, when the photoresist layer 300 has a poorer blocking effect, the charges in the detection layer 200 are more, and the detection layer 200 reacts more to the wet etching process. Therefore, the detection layer 200 is wet-etched to determine the ability of the photoresist layer 300 to block ion implantation based on the reactions of different regions of the detection layer 200 to the wet etching process.

[0077] In this embodiment, in the step of performing wet etching on the detection layer 200 , the etching solution of the wet etching includes hydrofluoric acid or phosphoric acid.

[0078] In the detection layer 200 formed by silicon oxide or silicon oxynitride in this embodiment, hydrofluoric acid can obtain a larger etching selectivity ratio for charged silicon oxide and uncharged silicon oxide, thereby easily removing the charged silicon oxide while retaining the uncharged silicon oxide; phosphoric acid can obtain a larger etching selectivity ratio for charged silicon oxynitride and uncharged silicon oxynitride, thereby easily removing the charged silicon oxynitride while retaining the uncharged silicon oxynitride.

[0079] In this embodiment, in the step of performing the wet etching process on the detection layer 200 , the detection layer 200 is left in the region where the thickness of the photoresist layer 300 is minimized.

[0080] Keeping the detection layer 200 in the area with the smallest thickness of the photoresist layer 300 means that after the detection layer 200 is wet-etched, part of the detection layer 200 below the area with the smallest thickness of the photoresist layer 300 is still retained and not completely removed.

[0081] The photoresist layer 300 with the smallest thickness has the worst blocking ability against ion implantation. Therefore, the detection layer 200 has the most charge in the region with the smallest thickness of the photoresist layer 300. Accordingly, the detection layer 200 in the region with the smallest thickness of the photoresist layer 300 is most susceptible to etching. Subsequently, the ion implantation blocking ability of the photoresist layer 300 can be determined by the thickness of the removed detection layer 200, the thickness of the remaining detection layer 200, or the wet etching rate. However, if the detection layer 200 that is most susceptible to etching has been completely removed while the detection layer 200 in other regions is still being etched, different regions of the detection layer 200 experience different etching times, making it difficult to test detection layers 200 in different regions under the same conditions. Therefore, in this embodiment, the detection layer 200 is retained in the region with the smallest thickness of the photoresist layer 300. This allows the detection layers 200 in different regions to be tested under the same conditions after wet etching, thereby facilitating subsequent determination of the ion implantation blocking ability of the photoresist layer 300 and obtaining more accurate test results.

[0082] Executing step S7: determining the ability of the photoresist layer 300 to block ion implantation based on the response of the detection layer 200 to the wet etching process.

[0083] In this embodiment, the thickness of the photoresist layer 300 varies in different regions. That is, the detection layer 200 in different regions has photoresist layers 300 of different thicknesses. Photoresist layers 300 of different thicknesses have different blocking effects on ion implantation. Therefore, photoresist layers 300 of different thicknesses can be tested simultaneously on a single substrate 100 (i.e., using only one wafer) through a single ion implantation process. This reduces testing costs and time, and facilitates shortening the testing cycle. Furthermore, because the charge from the ion implantation process has a catalytic effect on the wet etching process, when the photoresist layer 300 has a good blocking effect, the charge in the detection layer 200 is low, and the detection layer 200 has a weaker reaction to the wet etching process. Correspondingly, when the photoresist layer 300 has a poor blocking effect, the charge in the detection layer 200 is high, and the detection layer 200 has a stronger reaction to the wet etching process. Therefore, based on the different reactions of the detection layer 200 to the wet etching process, it can be determined whether the photoresist layer 300 of corresponding thickness above the detection layer 200 has a good blocking ability against ion implantation. The testing method is relatively simple and easy to operate, and the testing cost is low.

[0084] In this embodiment, the step of obtaining a characterization of the ability of the photoresist layer 300 to block ion injection based on the reaction of the detection layer 200 to the wet etching treatment includes: obtaining the thickness of the remaining detection layer 200 in different areas after the wet etching treatment as the second detection thickness.

[0085] When the blocking effect of the photoresist layer 300 is better, the charge in the detection layer 200 is less, the reaction of the detection layer 200 to the wet etching treatment is weaker, and the thickness of the remaining detection layer 200 is larger. Correspondingly, when the blocking effect of the photoresist layer 300 is poor, the charge in the detection layer 200 is more, the reaction of the detection layer 200 to the wet etching treatment is stronger, and the thickness of the remaining detection layer 200 is smaller. Therefore, the ability of the photoresist layer 300 to block ion injection can be judged according to the thickness of the remaining detection layer 200 in different areas, that is, the second detection thickness.

[0086] In this embodiment, the area of ​​the detection layer 200 where the second detection thickness is greater than or equal to the second preset thickness is obtained as the qualified area.

[0087] If the second detection thickness is greater than or equal to the second preset thickness, the remaining thickness of the detection layer 200 in this area is large, meeting the preset target, indicating that the ability of the photoresist layer 300 corresponding to the qualified area to block ion injection meets the standard.

[0088] Accordingly, in this embodiment, the photoresist layer 300 corresponding to the qualified area is obtained as the photoresist layer 300 having the qualified ability to block ion implantation.

[0089] In other embodiments, the step of obtaining a characterization of the photoresist layer's ability to block ion implantation based on the detection layer's response to the wet etching process may include obtaining the thickness of the detection layer removed by the wet etching process in different regions as a first detection thickness.

[0090] When the blocking effect of the photoresist layer is better, the charge in the detection layer is less, the detection layer reacts weakly to the wet etching treatment, and the thickness of the removed detection layer is smaller. Correspondingly, when the blocking effect of the photoresist layer is poor, the charge in the detection layer is more, the detection layer reacts strongly to the wet etching treatment, and the thickness of the removed detection layer is larger. Therefore, the ability of the photoresist layer to block ion injection can be judged based on the thickness of the detection layer removed in different areas, that is, the first detection thickness.

[0091] In this other embodiment, a region of the detection layer where the first detection thickness is less than or equal to the first preset thickness is obtained as the qualified region.

[0092] If the first detection thickness is less than or equal to the first preset thickness, the thickness of the detection layer removed in this area is small, which meets the preset target, indicating that the ability of the photoresist layer corresponding to the qualified area to block ion injection meets the standard.

[0093] In other embodiments, the step of obtaining a characterization of the photoresist layer's ability to block ion implantation based on the detection layer's response to the wet etching process may include obtaining etching rates of the detection layer in different regions during the wet etching process.

[0094] When the photoresist layer has a better blocking effect, the charge in the detection layer is less, the charge has a smaller catalytic effect on the wet etching process, and the etching rate is lower. Correspondingly, when the photoresist layer has a poor blocking effect, the charge in the detection layer is more, the charge has a greater catalytic effect on the wet etching process, and the etching rate is higher. Therefore, the ability of the photoresist layer to block ion injection can be judged based on the etching rate of the detection layer in different areas.

[0095] In some other embodiments, a region of the detection layer where the etching rate is less than or equal to a preset etching rate is obtained as the qualified region.

[0096] If the etching rate is less than or equal to the preset etching rate, the etching rate of the detection layer in this area is small, meeting the preset target, indicating that the ability of the photoresist layer corresponding to the qualified area to block ion implantation meets the standard.

[0097] In this embodiment, the step of obtaining the photoresist layer 300 corresponding to the qualified area as the photoresist layer 300 having the qualified ability to block ion implantation includes: obtaining the minimum value of the thickness of the photoresist layer 300 corresponding to the qualified area.

[0098] The photoresist layers 300 corresponding to the qualified areas are all photoresist layers 300 having qualified ion injection blocking capability. Therefore, the minimum thickness of the photoresist layers 300 corresponding to the qualified areas is the minimum thickness of the photoresist layers 300 having qualified ion injection blocking capability.

[0099] Accordingly, in this embodiment, a thickness greater than or equal to the minimum value is obtained as the qualified thickness of the photoresist layer 300 for its ability to block ion implantation.

[0100] That is to say, after testing, the photoresist layer 300 having a thickness greater than or equal to the minimum value can have a good blocking effect on the ion implantation process, and the ability of the photoresist layer 300 to block ion implantation meets the standard.

[0101] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for detecting the ability of a photoresist to block ion implantation, characterized in that: include: providing a substrate; forming a detection layer on the substrate; forming a photoresist layer on the detection layer, wherein the thickness of the photoresist layer varies in different areas; performing ion implantation on the photoresist layer; removing the photoresist layer; performing a wet etching process on the detection layer; The ability of the photoresist layer to block ion implantation is determined based on the response of the detection layer to the wet etching process.

2. The detection method according to claim 1, wherein In the step of forming a detection layer on the substrate, the material of the detection layer includes silicon oxide or silicon oxynitride.

3. The detection method according to claim 1 or 2, wherein In the step of performing a wet etching treatment on the detection layer, an etching solution of the wet etching treatment includes hydrofluoric acid or phosphoric acid.

4. The detection method according to claim 1, wherein In the step of forming a detection layer on the substrate, the thickness of the detection layer is equal in different areas.

5. The detection method according to claim 1, wherein In the step of forming a detection layer on the substrate, the detection layer has a thickness of 50 nm to 100 nm.

6. The detection method according to claim 1, wherein In the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually changes along a preset direction.

7. The detection method according to claim 6, wherein In the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually changes in a gradient along a preset direction.

8. The detection method according to claim 6, wherein In the step of forming a photoresist layer on the detection layer, the thickness of the photoresist layer gradually increases from the middle area to the edge area, or the thickness of the photoresist layer gradually decreases from the middle area to the edge area.

9. The detection method according to claim 1, wherein In the step of forming a photoresist layer on the detection layer, the material of the photoresist layer includes photoresist.

10. The detection method according to claim 1, wherein The step of obtaining a characterization of the ability of the photoresist layer to block ion implantation based on the response of the detection layer to the wet etching process includes: obtaining a thickness of the detection layer removed by the wet etching process in different regions as a first detection thickness; Acquire an area of ​​the detection layer where the first detection thickness is less than or equal to the first preset thickness as a qualified area; The photoresist layer corresponding to the qualified area is obtained as a photoresist layer having a qualified ability to block ion implantation.

11. The detection method according to claim 1, wherein The step of obtaining a characterization of the ability of the photoresist layer to block ion implantation based on the response of the detection layer to the wet etching process includes: obtaining the thickness of the detection layer remaining in different regions after the wet etching process as a second detection thickness; Acquire an area of ​​the detection layer where the second detection thickness is greater than or equal to the second preset thickness as a qualified area; The photoresist layer corresponding to the qualified area is obtained as a photoresist layer having a qualified ability to block ion implantation.

12. The detection method according to claim 1, wherein The step of obtaining a characterization of the ability of the photoresist layer to block ion implantation based on the reaction of the detection layer to the wet etching process comprises: obtaining etching rates of the detection layer in different regions during the wet etching process; Acquire a region of the detection layer where the etching rate is less than or equal to a preset etching rate as a qualified region; The photoresist layer corresponding to the qualified area is obtained as a photoresist layer having a qualified ability to block ion implantation.

13. The detection method according to any one of claims 10 to 12, wherein: In the step of wet etching the detection layer, the detection layer is retained in the region where the thickness of the photoresist layer is minimized.

14. The detection method according to any one of claims 10 to 12, wherein: After forming a photoresist layer on the detection layer, the method further includes: measuring the thickness of the photoresist layer in different areas; The step of obtaining the photoresist layer corresponding to the qualified area as the photoresist layer having the qualified ability to block ion implantation comprises: obtaining a minimum value of the thickness of the photoresist layer corresponding to the qualified area; A thickness greater than or equal to the minimum value is obtained as a qualified thickness of the photoresist layer for its ability to block ion implantation.

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