Chamber cleaning control method and semiconductor process equipment

Abstract

The invention provides a chamber cleaning control method and semiconductor process equipment, and the method comprises the steps: a cleaning step: after the maintenance of a chamber is completed, introducing preset cleaning gas into the chamber, and carrying out the dry cleaning of the chamber, so as to remove residual polymers and chloride ions in the chamber; wherein the preset cleaning gas comprises oxygen-containing gas and hydrogen-containing gas; a pre-cleaning step: before the chamber starts to work each time, introducing set cleaning gas into the chamber to pre-clean the chamber so as to remove residual polymers and chloride ions in the chamber; wherein the set cleaning gas comprises oxygen-containing gas and hydrogen-containing gas. According to the invention, it can be ensured that the polymer in the chamber is maintained in an equilibrium state, continuous reduction of the etching rate of the photoresist due to excessive polymer is avoided, cavity opening for cleaning is not needed, the loss of parts and the failure rate of a machine are reduced, residual polymer and chloride ions in the chamber can be effectively removed, the etching rate of the photoresist is recovered, and the product yield is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a chamber cleaning control method and semiconductor process equipment. Background Art

[0002] In the integrated circuit manufacturing process, dry etching is a common process method in the device manufacturing process. Dry etching can well control the morphology of the required device and ensure the electrical performance of the device. Aluminum (Al) has become a commonly used interconnect metal material and metal contact points of the chip due to its advantages such as low resistivity, low cost and easy etching. In order to ensure etching accuracy, dry etching technology is usually adopted to etch the aluminum substrate, and photoresist is used as a mask for etching. After the aluminum substrate etching process is completed, it is necessary to quickly remove the corrosive products (chloride-containing photoresist and etching byproducts) remaining in the etching process from the silicon wafer surface. Otherwise, not only will the aluminum substrate be corroded, but also defects on the silicon wafer surface will be increased, thereby damaging the device performance. Therefore, it is a very necessary process step to promptly remove the photoresist and etching byproducts remaining on the aluminum substrate surface without exposing it to the atmosphere and to simultaneously perform a passivation protection treatment on its surface.

[0003] However, as the product continues to be produced, the polymer in the chamber continues to increase, see e.g. Figure 1 As shown in the curve of the relationship between the etching time of the aluminum stripping chamber and the photoresist etching rate, as the etching time of the aluminum stripping chamber increases, the photoresist etching rate of the machine stripping chamber continues to decrease, which can easily lead to incomplete removal of the photoresist. When the residual photoresist on the aluminum substrate comes into contact with the atmosphere, the chloride ions in the residual photoresist will corrode the aluminum substrate, thereby greatly reducing the yield of the product. Periodic maintenance of the machine can only increase the photoresist etching rate in a short period of time, and cannot avoid the continuous decline in the photoresist etching rate of the machine stripping chamber.

[0004] To prevent a continuous decrease in the photoresist etch rate within the machine's stripping chamber, chamber cleaning techniques typically involve open-chamber cleaning to remove accumulated polymers, or by introducing a certain amount of oxygen into the aluminum stripping chamber at regular intervals to remove the accumulated polymers. However, frequent open-chamber cleaning can easily increase component wear and, consequently, machine failure rates. Regularly introducing oxygen into the chamber only partially removes the polymers, leaving a significant amount of chloride ions remaining in the chamber to corrode the aluminum substrate. This fails to effectively slow the decrease in the photoresist etch rate, reducing product yield. Summary of the Invention

[0005] In view of this, the purpose of the present invention is to provide a chamber cleaning control method and semiconductor process equipment, which can ensure that the polymer in the chamber is maintained in an equilibrium state, avoid the continuous decrease in the photoresist etching rate due to excessive polymer, and do not require chamber opening for cleaning, thereby reducing component loss and machine failure rate. It can effectively remove residual polymer and chloride ions in the chamber, restore the photoresist etching rate, and improve product yield.

[0006] In order to achieve the above objectives, the technical solutions adopted in the embodiments of the present invention are as follows:

[0007] In a first aspect, an embodiment of the present invention provides a chamber cleaning control method, comprising:

[0008] A cleaning step, after the chamber maintenance is completed, introducing a predetermined cleaning gas into the chamber to perform dry cleaning on the chamber to remove residual polymers and chloride ions in the chamber; wherein the predetermined cleaning gas includes an oxygen-containing gas and a hydrogen-containing gas;

[0009] A pre-cleaning step is performed by introducing a set cleaning gas into the chamber before the chamber starts working each time to pre-clean the chamber so as to remove residual polymers and chloride ions in the chamber; wherein the set cleaning gas includes oxygen-containing gas and hydrogen-containing gas.

[0010] Furthermore, an embodiment of the present invention provides a first possible implementation of the first aspect, wherein, in the cleaning step, the preset cleaning gas is ionized, and the chamber pressure is controlled to decrease in a step-like manner during the dry cleaning process so that the plasma runs vertically downward.

[0011] Furthermore, the embodiment of the present invention provides a second possible implementation of the first aspect, wherein the cleaning step includes:

[0012] a passivation step, controlling the chamber to be at a first preset pressure, introducing hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the hydrogen-containing gas;

[0013] A first cleaning step comprises controlling the chamber to be at a second preset pressure, introducing an oxygen-containing gas and a hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas; wherein the second preset pressure is lower than the first preset pressure, and the flow rate of the oxygen-containing gas is higher than the flow rate of the hydrogen-containing gas;

[0014] a second cleaning step of controlling the chamber to be at a third preset pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas; wherein the third preset pressure is less than the second preset pressure;

[0015] The passivation step to the second cleaning step are cyclically executed until the execution times reach a preset number.

[0016] Furthermore, an embodiment of the present invention provides a third possible implementation of the first aspect, wherein the hydrogen-containing gas is H2O gas, and the oxygen-containing gas is O2;

[0017] In the passivation step, the upper electrode power ranges from 1500W to 2500W, the first preset pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm;

[0018] In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the second preset pressure ranges from 2T to 3T, the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm, and the flow rate of the introduced O2 ranges from 1000sccm to 3000sccm;

[0019] In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the third preset pressure ranges from 0.5T to 1T, the flow rate of the H2O gas introduced ranges from 1000sccm to 1500sccm, and the flow rate of the O2 introduced ranges from 800sccm to 1500sccm.

[0020] Furthermore, an embodiment of the present invention provides a fourth possible implementation of the first aspect, wherein the gas introduced in the first cleaning step further includes a nitrogen-containing gas;

[0021] The flow rate of the nitrogen-containing gas introduced is in the range of 200 sccm to 500 sccm.

[0022] Furthermore, an embodiment of the present invention provides a fifth possible implementation of the first aspect, wherein the pre-cleaning step includes:

[0023] During the cleaning phase above the chamber, the chamber is controlled to be at a first set pressure, and during the cleaning process, the proportion of the hydrogen-containing gas in the set cleaning gas introduced is controlled to decrease in a step-like manner, and the proportion of the oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner;

[0024] During the cleaning phase below the chamber, the chamber is controlled to be at a second set pressure, and during the cleaning process, the proportion of the oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner; wherein, the second set pressure is lower than the first set pressure.

[0025] Furthermore, an embodiment of the present invention provides a sixth possible implementation of the first aspect, wherein the pre-cleaning step includes:

[0026] a first cleaning step of controlling the chamber to be at a first pressure, introducing the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the hydrogen-containing gas to remove residual chloride ions in the chamber;

[0027] a second cleaning step, controlling the chamber to be at a second pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer and chloride ions remaining in the chamber; wherein the second pressure is less than the first pressure; and wherein the second pressure is less than or equal to the first pressure;

[0028] a third cleaning step of controlling the chamber to be at a third pressure, introducing the oxygen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas to remove the polymer remaining in the chamber;

[0029] a fourth cleaning step of controlling the chamber to be at a fourth pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer and chloride ions remaining in the lower portion of the chamber; wherein the fourth pressure is lower than the third pressure;

[0030] A fifth cleaning step is to control the chamber to be at a fifth pressure, introduce the oxygen-containing gas and the hydrogen-containing gas into the chamber, and control a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer remaining at the lower part of the chamber.

[0031] Furthermore, an embodiment of the present invention provides a seventh possible implementation of the first aspect, wherein the hydrogen-containing gas is H2O gas, and the oxygen-containing gas is O2;

[0032] In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm;

[0033] In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the second pressure ranges from 2T to 5T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0034] In the third cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 2T to 5T, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0035] In the fourth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0036] In the fifth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the H2O gas introduced ranges from 300sccm to 500sccm, and the flow rate of the O2 introduced ranges from 3000sccm to 5000sccm.

[0037] Furthermore, an embodiment of the present invention provides an eighth possible implementation of the first aspect, wherein the gas introduced in the second cleaning step, the third cleaning step, and the fourth cleaning step further includes a nitrogen-containing gas;

[0038] The flow rate of the nitrogen-containing gas introduced in the second cleaning step, the third cleaning step, and the fourth cleaning step is in the range of 300 sccm to 500 sccm.

[0039] In the second aspect, an embodiment of the present invention further provides a semiconductor process equipment, comprising: a process chamber, an air inlet assembly, an upper electrode assembly, a lower electrode assembly and a controller, characterized in that the controller comprises at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the chamber cleaning control method as described in any one of the first aspects is implemented.

[0040] An embodiment of the present invention provides a chamber cleaning control method and semiconductor process equipment, the method comprising: a cleaning step, after the chamber maintenance is completed, introducing a preset cleaning gas into the chamber to perform dry cleaning on the chamber to remove residual polymers and chloride ions in the chamber; wherein the preset cleaning gas includes an oxygen-containing gas and a hydrogen-containing gas; a pre-cleaning step, before the chamber starts working each time, introducing a preset cleaning gas into the chamber to perform pre-cleaning on the chamber to remove residual polymers and chloride ions in the chamber; wherein the preset cleaning gas includes an oxygen-containing gas and a hydrogen-containing gas. The present invention adds a chamber cleaning step after periodic chamber maintenance, and performs dry cleaning of the chamber based on oxygen-containing gas and hydrogen-containing gas to remove polymers remaining in the chamber during maintenance. The present invention pre-cleans the chamber before each use to remove polymers and chloride ions remaining in the chamber, thereby ensuring that the polymers in the chamber are maintained in a balanced state, avoiding a continuous decrease in the photoresist etching rate due to excessive polymers, and eliminating the need for chamber opening for cleaning, thereby reducing component loss and machine failure rate, effectively removing polymers and chloride ions remaining in the chamber, restoring the photoresist etching rate, and improving product yield.

[0041] Other features and advantages of the embodiments of the present invention will be described in the following description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned technologies of the embodiments of the present invention.

[0042] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 A graph showing the relationship between the etching time of the desmear chamber and the photoresist etching rate is shown;

[0045] Figure 2 A flow chart of a chamber cleaning control method provided by an embodiment of the present invention is shown;

[0046] Figure 3 A curve diagram showing the relationship between the etching time of the desmear chamber and the photoresist etching rate provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0048] Currently, in order to increase the photoresist etching rate, periodic maintenance (PM) is usually performed on the tool to increase the photoresist etching rate in a short period of time, but this will increase the tool usage cost and reduce the tool utilization rate.

[0049] Related chamber cleaning control technologies include: one is to open the aluminum degumming chamber machine for cleaning to remove the accumulated polymer to increase the photoresist etching rate; the other is to introduce a certain amount of oxygen into the aluminum degumming chamber at regular intervals to remove the accumulated polymer, for example, every 10 to 15 days, O2 is introduced into the aluminum degumming chamber to produce a chemical reaction with the polymer to remove the polymer accumulated in the chamber.

[0050] However, machine downtime caused by cleaning or failure is likely to increase the waiting time for batch processing of products and affect the production capacity of the machine. At the same time, frequent cavity opening for cleaning is likely to increase component wear and tear and thus increase the failure rate, which will increase the downtime of the machine. Although the photoresist etching rate is improved after the cleaned components are reinstalled, it cannot be restored to the etching rate level of new components. As the number of component cleanings increases, the photoresist etching rate is still on a downward trend overall, and new components need to be replaced, which greatly increases the cost of machine use.

[0051] In the mass production process, although the regular introduction of oxygen into the aluminum de-gumming chamber can remove some polymers and slow down the photoresist etching rate, the effect is not ideal. Moreover, if only oxygen is used to remove polymers, a large amount of chloride ions will still remain in the chamber, which will corrode the aluminum substrate and reduce the product yield.

[0052] To improve the above problems, an embodiment of the present invention provides a chamber cleaning control method and semiconductor process equipment, which are described in detail below.

[0053] This embodiment provides a chamber cleaning control method, see Figure 2 The chamber cleaning control method flow chart shown in FIG. 1 mainly includes the following steps:

[0054] Step S202, a cleaning step, after the chamber maintenance is completed, a preset cleaning gas is introduced into the chamber to perform dry cleaning of the chamber to remove residual polymers and chloride ions in the chamber;

[0055] The preset cleaning gas includes oxygen-containing gas and hydrogen-containing gas. Since the main component of the polymer remaining in the chamber is carbon, under a high temperature environment of 200-300°C, O2 combines with carbon to generate carbon dioxide, which is then pumped away. The reaction expression is: C+O2→CO2↑

[0056] By introducing oxygen-containing gas into the chamber during the cleaning process, it can react with the polymer in the chamber and extract the generated by-products to remove the polymer in the chamber; by introducing hydrogen-containing gas into the chamber during the cleaning process, it can remove the residual chloride ions in the chamber and reduce the corrosion of aluminum caused by chlorine.

[0057] The above-mentioned chamber can be the aluminum degumming chamber of the etching machine. The continuous operation of the machine causes a large amount of polymer (etching by-products and photoresist) to accumulate in the aluminum degumming chamber, causing the photoresist etching rate to continue to decrease. After periodic maintenance of the aluminum degumming chamber machine, dry cleaning (Clean WAC) is used to remove the residual polymer in the areas not cleaned in the chamber after periodic maintenance, so as to further remove the polymer and chloride ions that were not completely removed during maintenance.

[0058] Step S204, a pre-cleaning step, before the chamber starts working each time, a set cleaning gas is introduced into the chamber to pre-clean the chamber to remove residual polymers and chloride ions in the chamber;

[0059] The cleaning gases used include oxygen-containing and hydrogen-containing gases. By adding a pre-conditioning (WAC) process before chamber operations (including warm-up and product processing), the dual effects of post-maintenance dry cleaning and pre-conditioning before operations ensure that polymers within the chamber are maintained in equilibrium, preventing the problem of excessive polymers causing a continuous decrease in photoresist etch rate.

[0060] The above-mentioned chamber cleaning control method provided in this embodiment adds a chamber cleaning step after the periodic maintenance of the chamber, and performs dry cleaning of the chamber based on oxygen-containing gas and hydrogen-containing gas to remove the polymer remaining in the chamber during maintenance. By pre-cleaning the chamber before each use of the chamber to remove the residual polymer and chloride ions in the chamber, it can ensure that the polymer in the chamber is maintained in an equilibrium state, avoiding the continuous decrease in the photoresist etching rate due to excessive polymer, and there is no need to open the chamber for cleaning, thereby reducing component loss and machine failure rate, and can effectively remove the residual polymer and chloride ions in the chamber, restore the photoresist etching rate, and improve product yield.

[0061] In one embodiment, in the cleaning step provided in this embodiment, the preset cleaning gas is ionized, and during the dry cleaning process, the chamber pressure is controlled to decrease in a step-like manner so that the plasma runs vertically downward.

[0062] The above-mentioned cleaning step can be divided into multiple sub-steps. When executing multiple sub-steps, the chamber pressure of the next sub-step can be controlled to be lower than the chamber pressure of the previous sub-step to gradually reduce the chamber pressure. The lower chamber pressure can increase the plasma mean free path, improve the plasma anisotropy, and make more plasma move vertically downward, which can better clean the chamber.

[0063] In one embodiment, the cleaning steps provided in this embodiment specifically include:

[0064] a passivation step, controlling the chamber to be at a first preset pressure, introducing hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to turn on to ionize the hydrogen-containing gas;

[0065] In a first cleaning step, the chamber is controlled to be at a second preset pressure, oxygen-containing gas and hydrogen-containing gas are introduced into the chamber, and a radio frequency power supply is controlled to be turned on to ionize the oxygen-containing gas and hydrogen-containing gas; wherein the second preset pressure is less than the first preset pressure, and the flow rate of the oxygen-containing gas is greater than the flow rate of the hydrogen-containing gas;

[0066] a second cleaning step, controlling the chamber to be at a third preset pressure, introducing oxygen-containing gas and hydrogen-containing gas into the chamber, and controlling the radio frequency power supply to ionize the oxygen-containing gas and hydrogen-containing gas; wherein the third preset pressure is less than the second preset pressure;

[0067] The passivation step to the second cleaning step are cyclically executed until the number of executions reaches a preset number.

[0068] The above-mentioned preset number of times can be set according to the residual polymer in the chamber, and the value range of the preset number can be, for example, 2 to 6; the above-mentioned hydrogen-containing gas can be a gas that can ionize to form hydrogen free radicals to carry away the residual chloride ions in the chamber, such as H2O gas; the above-mentioned oxygen-containing gas can be a gas that can produce a chemical reaction with the carbon-containing polymer, such as any one or more gases including CO, CO2 and O2.

[0069] In the passivation step, the upper RF power supply is turned on to ionize the water vapor in the chamber, forming a large number of hydrogen free radicals to remove the residual chloride ions in the chamber, thereby reducing the corrosion of aluminum caused by chlorine. The flow rate of the hydrogen-containing gas introduced in the above-mentioned passivation step can be greater than the flow rate of the hydrogen-containing gas introduced in the first cleaning step and the second cleaning step, so as to mainly remove the chloride ions in the chamber in the passivation step.

[0070] By making the flow rate of the oxygen-containing gas greater than the flow rate of the hydrogen-containing gas in the first cleaning step, the oxygen-containing gas is used as the main cleaning gas to remove the residual polymer in the chamber.

[0071] By introducing oxygen-containing gas and hydrogen-containing gas in the second cleaning step and controlling the chamber pressure to continue to decrease, the plasma mean free path is increased, so that more plasma moves vertically downward to remove polymers and chloride ions below the chamber, thereby achieving better cleaning effect.

[0072] In one embodiment, the hydrogen-containing gas provided in this embodiment is H2O gas, and the oxygen-containing gas is O2; in the passivation step, the water vapor introduced into the chamber can also react with the aluminum film layer to form a passivation layer on the surface of the aluminum film layer.

[0073] In the passivation step, the upper electrode power ranges from 1500W to 2500W, the first preset pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm;

[0074] In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the second preset pressure ranges from 2T to 3T, the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm, and the flow rate of the introduced O2 ranges from 1000sccm to 3000sccm;

[0075] In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the third preset pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 1000sccm to 1500sccm, and the flow rate of the introduced O2 ranges from 800sccm to 1500sccm.

[0076] The process times of the passivation step, the first cleaning step and the second cleaning step may be the same or different, and the process times of the passivation step, the first cleaning step and the second cleaning step may range from 200s to 400s.

[0077] Since the plasma mean free path can be increased when the chamber pressure is low, by controlling the chamber pressure to gradually decrease when performing the passivation step, the first cleaning step, and the second cleaning step (the chamber pressure is the highest in the passivation step and the chamber pressure is the lowest in the second cleaning step), the plasma anisotropy can be gradually improved, so that more plasma begins to move vertically downward, thereby achieving cleaning from top to bottom inside the chamber, avoiding inadequate cleaning of the lower part of the chamber, and achieving a better cleaning effect on the chamber.

[0078] By introducing only water vapor during the passivation step, the remaining chloride ions in the chamber are primarily removed, mitigating aluminum corrosion caused by chlorine. In the first cleaning step, the water vapor flow rate is reduced and a large amount of oxygen is added to primarily remove the remaining polymer in the chamber and assist in removing any remaining chloride ions that have not been completely removed. In the second cleaning step, the oxygen flow rate is reduced to increase the proportion of water vapor, allowing the polymer and chloride ions in the lower chamber to be removed at a lower chamber pressure. This prevents incomplete cleaning during the passivation and first cleaning steps, achieving comprehensive cleaning of all locations and residues within the chamber.

[0079] In one embodiment, the gas introduced in the first cleaning step provided in this embodiment further includes a nitrogen-containing gas; the flow rate of the nitrogen-containing gas introduced is in the range of 200 sccm to 500 sccm.

[0080] The nitrogen-containing gas can dilute the oxygen-containing gas that plays a cleaning role, making the cleaning process easier to control. It is also beneficial to remove the by-products generated during the cleaning process. It can also react with the aluminum film layer to generate aluminum nitride, which plays a role in protecting the aluminum film layer.

[0081] In one embodiment, the pre-cleaning step provided in this embodiment includes:

[0082] During the cleaning phase above the chamber, the chamber is controlled to be at a first set pressure, and during the cleaning process, the proportion of hydrogen-containing gas in the set cleaning gas introduced is controlled to decrease in a step-like manner, and the proportion of oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner;

[0083] During the cleaning phase below the chamber, the chamber is controlled to be at a second set pressure, and the proportion of oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner during the cleaning process; wherein the second set pressure is lower than the first set pressure.

[0084] By controlling the chamber at different pressures during the chamber pre-cleaning process, the chamber pre-cleaning step is divided into the upper chamber cleaning stage and the lower chamber cleaning stage, so as to comprehensively clean the residual polymers and chloride ions in various locations in the chamber, thereby improving the etching rate of the photoresist in the subsequent process.

[0085] In one embodiment, the pre-cleaning step provided in this embodiment includes:

[0086] a first cleaning step, controlling the chamber to be at a first pressure, introducing a hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the hydrogen-containing gas to remove residual chloride ions in the chamber;

[0087] The hydrogen-containing gas may be a gas that can ionize to form hydrogen radicals to remove residual chloride ions in the chamber, such as H2O gas;

[0088] Under a certain pressure, the hydrogen-containing gas in the chamber is ionized to form a large number of hydrogen free radicals that remove the residual chloride ions in the chamber, thereby reducing the corrosion of aluminum caused by chlorine. The reaction expression is:

[0089] H2O—2H+O

[0090] H+Cl→HCl↑

[0091] a second cleaning step, controlling the chamber to be at a second pressure, introducing an oxygen-containing gas and a hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove residual polymer and chloride ions in the chamber; wherein the second pressure is less than the first pressure; and wherein the second pressure is less than or equal to the first pressure;

[0092] The oxygen-containing gas may be a gas that can chemically react with the carbon-containing polymer, such as any one or more gases selected from the group consisting of CO, CO 2 and O 2 .

[0093] In this cleaning step, oxygen-containing gas is the main cleaning gas. The main component of the polymer remaining in the chamber is carbon. In an environment of 200-300°C, the oxygen-containing gas combines with carbon to generate carbon dioxide, which is extracted, thereby reducing the accumulation of polymer in the chamber. Since the residual chloride ions in the chamber need to be cleaned and removed through multiple cycles, a small amount of hydrogen-containing gas can be used in this cleaning step to remove the residual chloride ions in the chamber.

[0094] a third cleaning step, controlling the chamber to be at a third pressure, introducing an oxygen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas to remove residual polymer in the chamber;

[0095] The third pressure may be equal to the second pressure. By removing the hydrogen-containing gas in the cleaning step and using only the oxygen-containing gas, the dilution of the oxygen-containing gas is reduced, the removal rate of the polymer in the chamber is increased, and the pre-cleaning rate of the chamber is thereby increased.

[0096] a fourth cleaning step, controlling the chamber to be at a fourth pressure, introducing an oxygen-containing gas and a hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove residual polymer and chloride ions below the chamber; wherein the fourth pressure is lower than the third pressure;

[0097] Since a large amount of polymer will accumulate at the bottom of the chamber during the etching process, the pressure of the chamber is controlled to be lowered in the fourth cleaning step. The lower chamber pressure can increase the mean free path of the plasma, improve the anisotropy of the plasma, and make more plasma move vertically downward. The free radicals generated by the oxygen-containing gas are more likely to react with the polymer remaining at the bottom of the chamber and be extracted. The hydrogen free radicals in the hydrogen-containing gas are more likely to carry away the chloride ions remaining at the bottom of the chamber, thereby reducing the corrosion of aluminum.

[0098] In the fifth cleaning step, the chamber is controlled to be at a fifth pressure, oxygen-containing gas and hydrogen-containing gas are introduced into the chamber, and a radio frequency power supply is controlled to be turned on to ionize the oxygen-containing gas and hydrogen-containing gas to remove residual polymers below the chamber.

[0099] The fifth pressure may be equal to the fourth pressure.

[0100] When a large amount of chloride ions and polymers remain in the chamber, the first to fifth cleaning steps may be repeatedly performed to completely remove the chloride ions and polymers remaining in the upper and lower parts of the chamber.

[0101] In one embodiment, in the first cleaning step provided in this embodiment, the hydrogen-containing gas is H2O gas, and the oxygen-containing gas is O2;

[0102] In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm;

[0103] In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the second pressure ranges from 2T to 5T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0104] In the third cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 2T to 5T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0105] In the fourth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm;

[0106] In the fifth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm.

[0107] By controlling the chamber pressure to gradually decrease during the execution of the first to fifth cleaning steps, and controlling the chamber pressure to be at a relatively low state during the fourth and fifth cleaning steps, the plasma anisotropy can be gradually improved, so that more plasma begins to move vertically downward, thereby mainly cleaning the chloride ions and polymers above the interior of the chamber during the first to third cleaning steps, and mainly cleaning the chloride ions and polymers below the interior of the chamber during the fourth and fifth cleaning steps, thereby avoiding the generation of cleaning dead corners and achieving all-round pre-cleaning of the chamber.

[0108] By introducing only water vapor in the first cleaning step, a large amount of chloride ions remaining in the chamber are primarily removed, thereby reducing aluminum corrosion caused by chlorine;

[0109] In the second cleaning step, a large amount of oxygen and a small amount of water vapor are introduced to primarily clean most of the polymer above the interior of the chamber, and to remove chloride ions that were not completely removed from the upper portion of the interior of the chamber during the first cleaning step, thereby completely removing chloride ions from the upper portion of the interior of the chamber. In the third cleaning step, water vapor is removed and a large amount of oxygen is introduced to reduce the dilution of oxygen by water vapor, thereby increasing the removal rate of the polymer above the interior of the chamber, thereby achieving complete cleaning of the upper portion of the interior of the chamber.

[0110] In the fourth cleaning step, a large amount of oxygen and a small amount of water vapor are introduced to mainly clean most of the polymers in the lower part of the chamber, and the chloride ions that were not completely removed in the lower part of the chamber in the first cleaning step are removed, thereby removing the residual chloride ions in the lower part of the chamber; in the fifth cleaning step, the dilution gas nitrogen is removed to increase the flow ratio of oxygen and water vapor, and the chloride ions and polymers remaining in the lower part of the chamber are thoroughly cleaned, thereby improving the removal speed of the polymers and chloride ions in the lower part of the chamber and improving the cleaning efficiency of the lower part of the chamber.

[0111] In one embodiment, the gas introduced into the second cleaning step, the third cleaning step, and the fourth cleaning step provided in this embodiment further comprises nitrogen-containing gas;

[0112] The flow rate of the nitrogen-containing gas introduced in the second cleaning step, the third cleaning step, and the fourth cleaning step is in the range of 300 sccm to 500 sccm.

[0113] The nitrogen-containing gas may be, for example, N2. The nitrogen-containing gas can dilute the cleaning gas, making the cleaning process easier to control and facilitating the removal of by-products generated during the cleaning process. By removing the nitrogen-containing gas in the fifth cleaning step, only oxygen-containing gas and hydrogen-containing gas are introduced to increase the ratio of oxygen-containing gas to hydrogen-containing gas, thereby increasing the removal rate of polymers and chloride ions below the chamber.

[0114] The above-mentioned chamber cleaning control method provided in this embodiment removes residual polymers in the areas that have not been cleaned in the chamber after periodic maintenance by adding dry cleaning after periodic maintenance, and adds a chamber pre-cleaning process before the chamber works. The dual effects can ensure that the polymer in the chamber is maintained in a balanced state, and the problem of continuous decrease in photoresist etching rate due to excessive polymer will not occur. By adopting a dry etching cleaning process instead of ordinary open cavity cleaning, the photoresist etching rate can be restored without opening the cavity, reducing component loss and machine failure rate, which is beneficial to reducing machine use costs and increasing machine utilization. At the same time, the cleaning process adopted will not change the chamber environment, avoiding the problem of yield decrease due to changes in the chamber environment, and improving product yield.

[0115] Based on the above embodiment, this embodiment provides an example of applying the above chamber cleaning control method to solve the problem of continuous decrease in photoresist etching rate in aluminum stripping chamber. The specific steps can be referred to as follows:

[0116] Step 1, cleaning step, is performed after each chamber maintenance. The cleaning step mainly includes three steps. The temperature of the electrostatic chuck during the process is 200-300℃. The chamber pressure, upper electrode power, gas flow configuration and process time are as follows:

[0117] Passivation step: the upper electrode power is 1500W to 2500W, the chamber pressure is 3T to 6T, the flow rate of the introduced H2O gas is 1500sccm to 3000sccm, and the process time is 200s to 400s.

[0118] In the first cleaning step (Strip-1), the upper electrode power is 1500W to 2500W, the chamber pressure range is 2T to 3T, the flow rate of the H2O gas is 1500sccm to 3000sccm, the flow rate of the O2 gas is 1000sccm to 3000sccm, the flow rate of the N2 gas is 200sccm to 500sccm, and the process time is 200s to 400s;

[0119] In the second cleaning step (Strip-2 step), the upper electrode power is 1500W~2500W, the chamber pressure is 0.5T~1T, the flow rate of the H2O gas introduced is 1000sccm~1500sccm, the flow rate of the O2 introduced is 800sccm~1500sccm, and the process time is 200s~400s.

[0120] Repeat the passivation step, the first cleaning step, and the second cleaning step 3 to 4 times;

[0121] Step 2, pre-cleaning step, is performed before each chamber operation. The pre-cleaning step includes five steps. The temperature of the electrostatic chuck during the process is 200-300°C. The chamber pressure, upper electrode power, gas flow configuration and process time are as follows:

[0122] In the first cleaning step, the upper electrode power is 1500W to 2500W, the chamber pressure is 3T to 6T, the flow rate of the introduced H2O gas is 1500sccm to 3000sccm, and the process time is 50s to 100s;

[0123] Under a certain pressure, by ionizing the water vapor in the chamber, a large number of hydrogen free radicals are formed to remove the residual chloride ions in the chamber, which can reduce the corrosion of aluminum caused by chlorine. The reaction expression is:

[0124] H2O—2H+O

[0125] H+Cl→HCl↑

[0126] In the second cleaning step, the upper electrode power is 1500W to 2500W, the chamber pressure is 2T to 5T, the flow rate of the H2O gas is 300sccm to 500sccm, the flow rate of the O2 gas is 3000sccm to 5000sccm, the flow rate of the N2 gas is 300sccm to 500sccm, and the process time is 50s to 100s;

[0127] During the cleaning process, O2 is the main cleaning gas. The main component of the polymer remaining in the chamber is carbon. In an environment of 200-300°C, O2 combines with carbon to generate carbon dioxide and is extracted, which can reduce the accumulation of polymer in the chamber; N2 can dilute the oxygen-containing gas that plays a cleaning role, making the cleaning process easier to control and at the same time facilitating the extraction of by-products generated during the cleaning process; since the residual chloride ions in the chamber need to be cleaned and removed through multiple cycles, a small amount of water vapor can be used in this cleaning step to remove the residual chloride ions in the chamber.

[0128] C+O2→CO2↑

[0129] In the third cleaning step, the upper electrode power is 1500W to 2500W, the chamber pressure is 2T to 5T, the flow rate of O2 is 3000sccm to 5000sccm, the flow rate of N2 is 300sccm to 500sccm, and the process time is 80s to 180s;

[0130] Only O2 and N2 are used in this cleaning step, without water vapor, to reduce the dilution of the O2 gas and remove the residual polymer in the chamber more quickly.

[0131] In the fourth cleaning step, the upper electrode power range is 1500W to 2500W, the chamber pressure range is 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm, the flow rate of the introduced N2 ranges from 300sccm to 500sccm, and the process time is 50s to 100s.

[0132] Since a large amount of polymer will also gather at the bottom of the chamber during the etching process, a lower chamber pressure can increase the plasma mean free path, improve the plasma anisotropy, and make more plasma move vertically downward. The free radicals generated by O2 are more likely to react with the residual polymer at the bottom of the chamber and be extracted. The hydrogen radicals in the water vapor are more likely to carry away the residual chloride ions at the bottom of the chamber, reducing the corrosion to aluminum.

[0133] In the fifth cleaning step, the upper electrode power ranges from 1500W to 2500W, the chamber pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm, and the process time is 50s to 100s.

[0134] For example, after the aluminum degumming chamber is cleaned by the chamber cleaning control method provided in this embodiment, see Figure 3 The relationship curve between the etching time of the degumming chamber and the photoresist etching rate provided by the present embodiment is shown. By adopting the chamber cleaning control method provided by the above embodiment to clean the aluminum degumming chamber, adding a dry cleaning process after periodic maintenance and adding a chamber pre-condition WAC process before each operation of the chamber, it is possible to ensure that the polymer in the chamber is maintained in an equilibrium state, and the problem of the photoresist etching rate continuously decreasing due to excessive polymer will not occur.

[0135] Corresponding to the chamber cleaning control method provided in the above embodiment, an embodiment of the present invention provides a semiconductor process equipment, which includes: a process chamber, an air inlet assembly, an upper electrode assembly, a lower electrode assembly and a controller, the controller includes at least one processor and at least one memory, the memory stores a computer program, and when the computer program is executed by the processor, it implements the chamber cleaning control method provided in the above embodiment.

[0136] The device provided in this embodiment has the same implementation principle and technical effects as those of the aforementioned embodiment. For the sake of brief description, for matters not mentioned in the device embodiment, reference may be made to the corresponding content in the aforementioned method embodiment.

[0137] An embodiment of the present invention provides an electronic device, which includes a processor and a memory. The memory stores a computer program that can be run on the processor. When the processor executes the computer program, the steps of the method provided in the above embodiment are implemented.

[0138] An embodiment of the present invention provides a computer-readable medium, wherein the computer-readable medium stores computer-executable instructions. When the computer-executable instructions are called and executed by a processor, the computer-executable instructions prompt the processor to implement the method described in the above embodiment.

[0139] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working process of the system described above can refer to the corresponding process in the aforementioned embodiment and will not be repeated here.

[0140] In addition, in the description of the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0141] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0142] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0143] Finally, it should be noted that the above-described embodiments are only specific implementations of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the above-described embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-described embodiments within the technical scope disclosed by the present invention, or replace some of the technical features therein with equivalents. Such modifications, changes, or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A chamber cleaning control method, characterized in that: include: A cleaning step, after the chamber maintenance is completed, introducing a predetermined cleaning gas into the chamber to perform dry cleaning on the chamber to remove residual polymers and chloride ions in the chamber; wherein the predetermined cleaning gas includes an oxygen-containing gas and a hydrogen-containing gas; A pre-cleaning step is performed by introducing a set cleaning gas into the chamber before the chamber starts working each time to pre-clean the chamber so as to remove residual polymers and chloride ions in the chamber; wherein the set cleaning gas includes oxygen-containing gas and hydrogen-containing gas.

2. The chamber cleaning control method according to claim 1, wherein: In the cleaning step, the preset cleaning gas is ionized, and during the dry cleaning process, the chamber pressure is controlled to decrease in a step-like manner so that the plasma runs vertically downward.

3. The chamber cleaning control method according to claim 1, wherein: The cleaning step comprises: a passivation step, controlling the chamber to be at a first preset pressure, introducing hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the hydrogen-containing gas; A first cleaning step comprises controlling the chamber to be at a second preset pressure, introducing an oxygen-containing gas and a hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas; wherein the second preset pressure is lower than the first preset pressure, and the flow rate of the oxygen-containing gas is higher than the flow rate of the hydrogen-containing gas; a second cleaning step of controlling the chamber to be at a third preset pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas; wherein the third preset pressure is less than the second preset pressure; The passivation step to the second cleaning step are cyclically executed until the execution times reach a preset number.

4. The chamber cleaning control method according to claim 3, wherein: The hydrogen-containing gas is H2O gas, and the oxygen-containing gas is O2; In the passivation step, the upper electrode power ranges from 1500W to 2500W, the first preset pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm; In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the second preset pressure ranges from 2T to 3T, the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm, and the flow rate of the introduced O2 ranges from 1000sccm to 3000sccm; In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the third preset pressure ranges from 0.5T to 1T, the flow rate of the H2O gas introduced ranges from 1000sccm to 1500sccm, and the flow rate of the O2 introduced ranges from 800sccm to 1500sccm.

5. The chamber cleaning control method according to claim 4, wherein: The gas introduced in the first cleaning step further includes nitrogen-containing gas; The flow rate of the nitrogen-containing gas introduced is in the range of 200 sccm to 500 sccm.

6. The chamber cleaning control method according to claim 1, wherein: The pre-cleaning step comprises: During the cleaning phase above the chamber, the chamber is controlled to be at a first set pressure, and during the cleaning process, the proportion of the hydrogen-containing gas in the set cleaning gas introduced is controlled to decrease in a step-like manner, and the proportion of the oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner; During the cleaning phase below the chamber, the chamber is controlled to be at a second set pressure, and during the cleaning process, the proportion of the oxygen-containing gas in the set cleaning gas introduced is controlled to increase in a step-like manner; wherein, the second set pressure is lower than the first set pressure.

7. The chamber cleaning control method according to claim 1, wherein: The pre-cleaning step comprises: a first cleaning step of controlling the chamber to be at a first pressure, introducing the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the hydrogen-containing gas to remove residual chloride ions in the chamber; a second cleaning step, controlling the chamber to be at a second pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer and chloride ions remaining in the chamber; wherein the second pressure is less than the first pressure; and wherein the second pressure is less than or equal to the first pressure; a third cleaning step of controlling the chamber to be at a third pressure, introducing the oxygen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas to remove the polymer remaining in the chamber; a fourth cleaning step of controlling the chamber to be at a fourth pressure, introducing the oxygen-containing gas and the hydrogen-containing gas into the chamber, and controlling a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer and chloride ions remaining in the lower portion of the chamber; wherein the fourth pressure is lower than the third pressure; A fifth cleaning step is to control the chamber to be at a fifth pressure, introduce the oxygen-containing gas and the hydrogen-containing gas into the chamber, and control a radio frequency power supply to ionize the oxygen-containing gas and the hydrogen-containing gas to remove the polymer remaining at the lower part of the chamber.

8. The chamber cleaning control method according to claim 7, wherein: The hydrogen-containing gas is H2O gas, and the oxygen-containing gas is O2; In the first cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 3T to 6T, and the flow rate of the introduced H2O gas ranges from 1500sccm to 3000sccm; In the second cleaning step, the upper electrode power ranges from 1500W to 2500W, the second pressure ranges from 2T to 5T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm; In the third cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 2T to 5T, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm; In the fourth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the introduced H2O gas ranges from 300sccm to 500sccm, and the flow rate of the introduced O2 ranges from 3000sccm to 5000sccm; In the fifth cleaning step, the upper electrode power ranges from 1500W to 2500W, the first pressure ranges from 0.5T to 1T, the flow rate of the H2O gas introduced ranges from 300sccm to 500sccm, and the flow rate of the O2 introduced ranges from 3000sccm to 5000sccm.

9. The chamber cleaning control method according to claim 8, wherein: The gas introduced in the second cleaning step, the third cleaning step and the fourth cleaning step further comprises nitrogen-containing gas; The flow rate of the nitrogen-containing gas introduced in the second cleaning step, the third cleaning step, and the fourth cleaning step is in the range of 300 sccm to 500 sccm.

10. A semiconductor process equipment, characterized in that: include: A process chamber, an air inlet assembly, an upper electrode assembly, a lower electrode assembly and a controller, characterized in that the controller includes at least one processor and at least one memory, the memory stores a computer program, and when the computer program is executed by the processor, it implements the chamber cleaning control method according to any one of claims 1 to 9.

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