Cerium-manganese composite compound polishing powder, polishing solution and application

Abstract

The invention relates to the field of chemical mechanical polishing, in particular to cerium-manganese composite compound polishing powder, polishing liquid and application, and the chemical general formula of the polishing powder is CexMnyMzOaDb, wherein M is a cation doping element, and D is an anion doping element; 0.05 < = x < = 0.95, 0.05 < = y < = 0.95, 0 < = z < = 0.5, 0.5 < = a < = 2, 0 < = b < = 2.0, x + y + z = 1, and z and b are not 0 at the same time. According to the cerium-manganese composite compound polishing powder disclosed by the invention, a proper amount of cation doped element M and / or anion doped element D is introduced into the cerium-manganese oxide, so that the valence state synergistic effect between Ce / Mn / M or Ce / Mn / D or Ce / Mn / M / D is realized, the physicochemical characteristics of the surface of the polishing powder can be effectively adjusted, the polishing quality is improved, the roughness Sa of the polished surface is reduced, and the polishing quality is improved. And meanwhile, the oxidation capacity is enhanced, so that the polishing rate is increased.

Description

Technical Field

[0001] The invention relates to the field of chemical mechanical polishing, and in particular to cerium-manganese composite compound polishing powder and polishing powder and applications thereof. Background Art

[0002] Silicon carbide (SiC) is a third-generation semiconductor material characterized by high strength, chemical corrosion resistance, high thermal shock resistance, high thermal conductivity, high saturated electron drift rate, high critical breakdown field strength, wide bandgap, and radiation resistance. This significantly improves the voltage resistance, high temperature resistance, conductivity, and operating frequency of SiC devices, while significantly reducing device switching energy consumption. This material is ideally suited to the demand for high-frequency, high-voltage, and high-power semiconductor devices in medium- and high-voltage applications such as new energy vehicles, photovoltaics, and smart grids. The surface morphology and degree of damage of SiC directly affect the performance of the workpiece. Chemical mechanical polishing (CMP), the final step in SiC substrate processing, is a common method for achieving global planarization of SiC substrates.

[0003] The CMP process is one of the key technologies for SiC wafer surface processing. It eliminates the damaged layer on the wafer surface through the synergistic effect of chemical corrosion and mechanical wear under a certain pressure, achieving surface removal and flattening. It is a key process for achieving an ultra-smooth, defect-free surface (surface roughness Sa < 0.1nm). However, SiC is very hard, with a Mohs hardness of 9.5, second only to the world's hardest diamond. It is also very stable at room temperature, not prone to chemical reactions, and has good tolerance to mechanical abrasion. Therefore, commonly used SiC polishing fluids cannot achieve both high polishing rates and high polishing accuracy.

[0004] Polishing powder is a core component of polishing slurries. Its physicochemical properties, such as type and particle size, directly influence the polishing rate and precision, and are crucial for the quality of the polished surface. Commonly used SiC polishing powders are single-component aluminum oxide, cerium oxide, or manganese oxide. However, these powders exhibit limited chemical corrosion and / or mechanical abrasion resistance, preventing them from achieving both high removal rates and low roughness. Therefore, there is an urgent need to develop new polishing powders and slurries that can reduce scratches on SiC surfaces, lower surface roughness, and achieve higher SiC substrate thinning rates. Summary of the Invention

[0005] (1) Purpose of the invention

[0006] The purpose of the present invention is to provide a cerium-manganese composite compound polishing powder and polishing liquid and their application, which can enhance the oxidizing ability of the polishing powder and improve the polishing performance.

[0007] (2) Technical solution

[0008] In order to solve the above problems, the present invention provides a cerium-manganese composite compound polishing powder, the chemical formula of the polishing powder is Cex Mn y M z O a D b ; Wherein, M is a cationic doping element, and D is an anionic doping element; 0.05≤x≤0.95, 0.05≤y≤0.95, 0≤z≤0.5, 0.5≤a≤2, 0≤b≤2.0, x+y+z=1, z and b are not 0 at the same time.

[0009] In another aspect of the present invention, the cationic doping element includes at least one of lanthanum, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, yttrium, titanium, vanadium, zirconium, hafnium, iron, cobalt, nickel, magnesium, calcium, strontium, aluminum, gallium, tin, antimony, silicon, boron, sodium and potassium.

[0010] In another aspect of the present invention, preferably, the anion doping element includes at least one of F, Cl, P, N and S.

[0011] In another aspect of the present invention, preferably, the median particle size D of the cerium-manganese composite polishing powder is 50 0.01~3.0μm, and meet D 10 ≥0.5D 50 , D 90 ≤2.5D 50 .

[0012] In another aspect of the present invention, preferably, a polishing liquid comprises a polishing slurry and a diluent, wherein the polishing slurry comprises the polishing powder as described above; and the mass ratio of the polishing slurry to the diluent is 1:5-30.

[0013] In another aspect of the present invention, preferably, the polishing slurry further comprises a dispersant and water, and the polishing powder content in the polishing slurry is 1 wt% to 40 wt%.

[0014] In another aspect of the present invention, preferably, the content of the dispersant is 0.01wt% to 5wt% of the mass of the polishing slurry, and the dispersant includes amino trimethylene phosphonic acid, amino trimethylene phosphonic acid sodium salt, sodium hexametaphosphate, cetyltrimethylammonium bromide, sodium lauryl sulfate, sodium lauryl sulfonate, triethanolamine lauryl sulfate, ammonium lauryl sulfate, polyoxyethylene alkyl ether sulfate triethanolamine, polyethylene glycol, polyvinyl alcohol, polyacrylic acid, polyacrylamide, ammonium polyacrylate, acrylic acid and acrylamide copolymer, polymethacrylate, carboxymethyl cellulose, potassium carboxymethyl cellulose, sodium carboxymethyl cellulose, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene octadecyl ether, polyoxyethylene oleyl ether, polyoxyethylene higher alcohol ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, At least one of polyoxyalkylene alkyl ethers, polyoxyethylene derivatives, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tetraoleate, polyethylene glycol monolaurate, polyethylene glycol monostearate, polyethylene glycol distearate, polyethylene glycol monooleate, polyoxyethylene alkylamine, polyoxyethylene hydrogenated castor oil, 2-hydroxyethyl methacrylate, alkylalkanolamine, polyvinylpyrrolidone, coconut amine acetate, octadecylamine acetate, dodecyl betaine, octadecyl betaine, lauryl dimethylamine oxide, and 2-alkyl-N-carboxymethyl-hydroxyethylimidazolinium betaine.

[0015] In another aspect of the present invention, preferably, the diluent comprises an oxidant, a stabilizer and water.

[0016] In another aspect of the present invention, preferably, the oxidant comprises at least one of hydrogen peroxide, permanganate, persulfate, permanganic acid, hypochlorite, perchloric acid and ceric ammonium nitrate, and the content of the oxidant is 0.1 wt% to 40 wt% of the mass of the diluent;

[0017] The stabilizer includes at least one of nitrate, sulfate, chloride, halide and sol, and the content of the stabilizer is 0.01wt% to 5wt% of the mass of the diluent.

[0018] In another aspect of the present invention, preferably, a polishing powder as described above and / or a polishing liquid as described above are used in the fields of silicon carbide, carbon-containing materials, flat glass, mobile phone cover glass, optical glass, liquid crystal display glass, glass substrates and integrated circuits.

[0019] (3) Beneficial effects

[0020] The above technical solution of the present invention has the following beneficial technical effects:

[0021] The cerium-manganese composite polishing powder of the present invention introduces an appropriate amount of a cationic doping element M and / or an anionic doping element D into the cerium-manganese oxide. This not only enriches the oxide with oxygen defects and oxygen vacancies, thereby increasing the amount of free active oxygen, but also achieves a valence synergistic effect between Ce / Mn / M, Ce / Mn / D, or Ce / Mn / M / D, thereby lowering the redox cycle energy barrier and accelerating the reaction on the oxide surface. These defects, oxygen vacancies, and synergistic effect not only regulate the physicochemical properties of the polishing powder surface, reducing the polished surface roughness Sa and improving the surface quality, but also enhances its oxidizing ability. During the polishing process, this enhanced oxidizing ability helps to more efficiently remove irregularities on the material surface, thereby accelerating the polishing rate.

[0022] Polishing powders and polishing liquids in the prior art often face the problem of difficulty in balancing polishing rate and polishing accuracy. A high polishing rate usually means greater surface damage and lower accuracy, while the pursuit of high accuracy often sacrifices polishing efficiency. The polishing powder of the present invention can reduce polishing damage while maintaining a high polishing rate through precise doping control and valence synergy. Due to the high hardness and chemical inertness of silicon carbide, it is not easy to undergo chemical reactions, and polishing it is a major difficulty. It is generally believed that the polishing process of silicon carbide is divided into two steps. First, the oxidant component in the polishing liquid oxidizes the surface of silicon carbide to form a "softening layer" that is easily removed, and then the abrasive particles in the polishing liquid mechanically and / or chemically remove the "softening layer". The polishing liquid of the present invention contains polishing powder, oxidant, dispersant, stabilizer and pH regulator. The cerium-manganese composite compound has relatively rich oxygen vacancies and strong synergy between Ce-Mn, which can be removed by The redox cycle is completed quickly, and the oxygen vacancies can be increased after element doping, and the doping elements can also form a synergistic effect with Ce and Mn, which can greatly improve the overall oxidation ability of the polishing liquid compared to traditional polishing liquids. The dispersant can adjust the surface charge state of the polishing powder, and can also make the polishing powder have better suspension performance, which is beneficial to the improvement of polishing efficiency and polishing stability. The stabilizer can stabilize the pH of the polishing liquid, improve the dispersion performance of the polishing powder, and improve the microscopic physical and chemical state of the surface of the polishing powder, which is beneficial to increase the force between the polishing powder and the polished surface, and ultimately improve the polishing performance. The polishing powder or polishing liquid of the present invention can achieve a higher surface finish in a shorter time, thereby improving production efficiency.

[0023] The polishing powder and polishing liquid provided by the present invention have a wide range of applicability. They can meet the precision polishing needs of hard materials such as silicon carbide, carbon-containing materials, and gallium nitride, as well as brittle materials such as mobile phone cover glass, liquid crystal display glass, and precision optical glass, and even high-precision applications such as glass substrates and integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is the white light interference image of the silicon carbide surface after polishing in Example 19. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention is further described in detail below in conjunction with specific embodiments. It should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concept of the present invention.

[0026] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0027] In the description of the present invention, it should be noted that the terms “first”, “second” and “third” are only used for descriptive purposes and should not be understood as indicating or implying relative importance.

[0028] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0029] A cerium-manganese composite polishing powder, the chemical formula of the polishing powder is Ce x Mn y M z O a D b ; Wherein, M is a cationic doping element, and D is an anionic doping element; 0.05≤x≤0.95, 0.05≤y≤0.95, 0≤z≤0.5, 0.5≤a≤2, 0≤b≤2.0, x+y+z=1, z and b are not 0 at the same time.

[0030] Optionally, in this embodiment, the cationic doping element includes at least one of lanthanum, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, yttrium, titanium, vanadium, zirconium, hafnium, iron, cobalt, nickel, magnesium, calcium, strontium, aluminum, gallium, tin, antimony, silicon, boron, sodium and potassium.

[0031] Furthermore, the cationic doping element includes at least one of lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, thulium, ytterbium, yttrium, titanium, zirconium, iron, cobalt, nickel, magnesium, calcium, strontium, aluminum, gallium, silicon, boron and potassium.

[0032] Furthermore, in this embodiment, the cationic doping element M includes at least one of lanthanum, praseodymium, neodymium, samarium, europium, ytterbium, yttrium, titanium, zirconium, iron, magnesium, calcium, aluminum, tin, silicon and boron.

[0033] Furthermore, in this embodiment, the anion doping element includes at least one of F, Cl, P, N and S.

[0034] Furthermore, the median particle size D of the cerium-manganese composite polishing powder is 50 0.01~3.0μm, and meet D 10 ≥0.5D 50 , D 90 ≤2.5D 50 .

[0035] Furthermore, in this embodiment, the rare earth polishing powder is synthesized by hydrothermal synthesis, precipitation, sol-gel method, etc., and then heat-treated to obtain the polishing powder. Furthermore, if the polishing powder particles are large, the particle size can be reduced by dry pulverization or wet pulverization.

[0036] The cerium-manganese composite polishing powder of the present invention introduces an appropriate amount of a cationic doping element M and / or an anionic doping element D into the cerium-manganese oxide. This not only enriches the oxide with oxygen defects and oxygen vacancies, thereby increasing the amount of free active oxygen, but also achieves a valence synergistic effect between Ce / Mn / M, Ce / Mn / D, or Ce / Mn / M / D, resulting in a lower redox cycle energy barrier and faster reaction on the oxide surface. These defects, oxygen vacancies, and synergistic effect not only adjust the physical and chemical properties of the polishing powder surface but also enhance its oxidizing ability. During the polishing process, this enhanced oxidizing ability helps to more efficiently remove irregularities on the material surface, thereby accelerating the polishing rate.

[0037] A polishing liquid comprising a polishing slurry and a diluent, wherein the polishing slurry comprises the polishing powder described above; the mass ratio of the polishing slurry to the diluent is 1:5-30. This ratio of polishing slurry to diluent ensures that the polishing powder is evenly distributed on the surface of the object being polished, thereby achieving a more uniform and smoother polishing effect. Too much diluent will reduce the abrasive concentration and the polishing rate, and excessive oxidation will cause corrosion defects on the polished surface. Too little diluent will result in excessively high abrasive concentration, causing adhesion to the polished surface and difficulty in removal, thereby reducing the polishing rate. Furthermore, this ratio of polishing slurry to diluent can ensure polishing quality while reasonably controlling costs.

[0038] Furthermore, in this embodiment, the polishing slurry further includes a dispersant and water, and the polishing powder content in the polishing slurry is 1wt% to 40wt%; further, the polishing powder content in the polishing slurry is 5wt% to 30wt%.

[0039] Further, in this embodiment, the content of the dispersant is 0.01wt% to 5wt% of the mass of the polishing slurry, and the dispersant includes amino trimethylene phosphonic acid, amino trimethylene phosphonic acid sodium salt, sodium hexametaphosphate, cetyltrimethylammonium bromide, sodium lauryl sulfate, sodium lauryl sulfonate, triethanolamine lauryl sulfate, ammonium lauryl sulfate, polyoxyethylene alkyl ether sulfate triethanolamine, polyethylene glycol, polyvinyl alcohol, polyacrylic acid, polyacrylamide, ammonium polyacrylate, acrylic acid and acrylamide copolymer, polymethacrylate, carboxymethyl cellulose, potassium carboxymethyl cellulose, sodium carboxymethyl cellulose, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene octadecyl ether, polyoxyethylene oleyl ether, polyoxyethylene higher alcohol ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, poly At least one of oxyalkylene alkyl ethers, polyoxyethylene derivatives, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tetraoleate, polyethylene glycol monolaurate, polyethylene glycol monostearate, polyethylene glycol distearate, polyethylene glycol monooleate, polyoxyethylene alkylamine, polyoxyethylene hydrogenated castor oil, 2-hydroxyethyl methacrylate, alkylalkanolamine, polyvinylpyrrolidone, coconut amine acetate, stearylamine acetate, dodecyl betaine, stearyl betaine, lauryl dimethylamine oxide, and 2-alkyl-N-carboxymethyl-hydroxyethylimidazolinium betaine.

[0040] Furthermore, in this embodiment, the diluent includes an oxidant, a stabilizer and water.

[0041] Furthermore, in this embodiment, the oxidant includes at least one of hydrogen peroxide, permanganate, persulfate, permanganic acid, hypochlorite, perchloric acid and ceric ammonium nitrate, and the content of the oxidant is 0.1wt% to 40wt% of the mass of the diluent;

[0042] The stabilizer includes at least one of nitrate, sulfate, chloride, halide and sol. Further, the stabilizer includes at least one of aluminum nitrate, magnesium nitrate, nickel nitrate, iron nitrate, copper nitrate, manganese nitrate, aluminum sulfate, magnesium sulfate, nickel sulfate, iron sulfate, copper sulfate, manganese sulfate, aluminum sol, magnesium sol, nickel sol, iron sol, copper sol, manganese sol, silica sol and silica-alumina sol. The content of the stabilizer is 0.01wt% to 5wt% of the mass of the diluent.

[0043] The diluent is adjusted to pH value by using at least one of nitric acid, sulfuric acid, hydrochloric acid, sodium hydroxide, potassium hydroxide and ammonia water, and the pH value range is 1.5-12.

[0044] Polishing powders and polishing liquids in the prior art often face the problem of difficulty in balancing polishing rate and polishing accuracy. A high polishing rate usually means greater surface damage and lower accuracy, while the pursuit of high accuracy often sacrifices polishing efficiency. The polishing powder of the present invention can reduce polishing damage while maintaining a high polishing rate through precise doping control and valence synergy. Due to the high hardness and chemical inertness of silicon carbide, it is not easy to undergo chemical reactions, and polishing it is a major difficulty. It is generally believed that the polishing process of silicon carbide is divided into two steps. First, the oxidant component in the polishing liquid oxidizes the surface of silicon carbide to form a "softening layer" that is easily removed, and then the abrasive particles in the polishing liquid mechanically and / or chemically remove the "softening layer". The polishing liquid of the present invention contains polishing powder, an oxidant, a dispersant and a stabilizer. The cerium-manganese composite compound has relatively rich oxygen vacancies and a strong synergistic effect between Ce-Mn, which can be removed by The redox cycle is completed quickly, and the oxygen vacancies can be increased after element doping, and the doping elements can also form a synergistic effect with Ce and Mn, which can greatly improve the overall oxidation ability of the polishing liquid compared to traditional polishing liquids. The dispersant can adjust the surface charge state of the polishing powder, and can also make the polishing powder have better suspension performance, which is beneficial to the improvement of polishing efficiency and polishing stability. The stabilizer can stabilize the pH of the polishing liquid, improve the dispersion performance of the polishing powder, and improve the microscopic physical and chemical state of the surface of the polishing powder, which is beneficial to increase the force between the polishing powder and the polished surface, and ultimately improve the polishing performance. The polishing powder or polishing liquid of the present invention can achieve a higher surface finish in a shorter time, thereby improving production efficiency.

[0045] Application of the polishing powder and / or the polishing liquid described above in the fields of silicon carbide, carbon-containing materials, flat glass, mobile phone cover glass, optical glass, liquid crystal display glass, glass substrate and integrated circuit.

[0046] The cerium-manganese composite polishing powder of the present invention achieves valence synergy between Ce / Mn / M or Ce / Mn / D or Ce / Mn / M / D by introducing an appropriate amount of cationic doping element M and / or anionic doping element D into cerium-manganese oxide. This synergistic effect not only adjusts the physical and chemical properties of the polishing powder surface but also enhances its oxidizing ability. During the polishing process, this enhanced oxidizing ability helps to more efficiently remove irregular parts of the material surface, thereby accelerating the polishing rate.

[0047] Existing polishing powders and polishing liquids often face the challenge of balancing polishing rate and polishing accuracy. High polishing rates typically result in greater surface damage and lower precision, while the pursuit of high precision often sacrifices polishing efficiency. The present invention, through precise doping control and valence state synergy, reduces polishing damage while maintaining a high polishing rate. The polishing powder or polishing liquid of the present invention can achieve a higher surface finish in a shorter time, improving production efficiency.

[0048] The polishing powder and polishing liquid provided by the present invention have a wide range of applicability. They can meet the precision polishing needs of hard materials such as silicon carbide, carbon-containing materials, and gallium nitride, as well as brittle materials such as mobile phone cover glass, liquid crystal display glass, and precision optical glass, and even high-precision applications such as glass substrates and integrated circuits.

[0049] The polishing powder and polishing liquid provided by the present invention have a wide range of applicability. They can meet the precision polishing needs of hard materials such as silicon carbide, carbon-containing materials, and gallium nitride, as well as brittle materials such as mobile phone cover glass, liquid crystal display glass, and precision optical glass, and even high-precision applications such as glass substrates and integrated circuits.

[0050] Examples 1-18 are prepared by using high-purity raw materials, accurately weighing and mixing them according to the general formula, and using at least one of a hydrothermal synthesis method, a precipitation method, or a sol-gel method to obtain polishing powders of the corresponding chemical formula.

[0051] Comparative Example 1: CeO2 and MnO2 are physically mixed in a ratio of 0.2:0.8; Comparative Example 2: CeO2, MnO2 and ZrO2 are physically mixed in a ratio of 0.25:0.6:0.15.

[0052] The comparison of the chemical formula and particle size of Examples 1-18 and Comparative Examples 1-2 is shown in Table 1.

[0053] Table 1 Comparison of chemical formula and particle size of Examples 1-18 and Comparative Examples 1-2

[0054]

[0055] The components of the polishing liquids of Examples 19-29 are shown in Table 2.

[0056] Table 2 Components of the polishing liquids of Examples 19-29

[0057]

[0058] The polishing liquids obtained in Examples 19, 20, and 22 and the polishing liquid prepared in Comparative Example 1 according to the conditions of Example 19 were used as the polishing device, with a silicon carbide wafer (4 inches, silicon surface) at a polishing pressure of 30 kPa, a polishing time of 20 min, and a polishing disk speed of 45 rpm; Figure 1 This is the white light interference image of the silicon carbide surface after polishing in Example 19. The roughness of the polished surface Sa = 0.095 nm, which meets the roughness requirement for ultra-precision polishing of silicon carbide substrates.

[0059] The polishing liquid obtained in Examples 24 and 25 and the polishing powder obtained in Comparative Example 2 were prepared according to the conditions of Example 24, with K9 glass (50 mm × 50 mm) as the polishing device, a polishing pressure of 15 kPa, a polishing time of 20 min, and a polishing disk speed of 45 rpm;

[0060] The polishing liquid obtained in Examples 26 and 27 and the polishing powder obtained in Comparative Example 2 were prepared according to the conditions of Example 26. A TFT-LCD glass substrate (50 mm × 50 mm) was used as the polishing device, with a polishing pressure of 15 kPa, a polishing time of 20 min, and a polishing disk speed of 45 rpm;

[0061] The polishing rate and surface roughness results of the polished samples are shown in Table 3;

[0062] Table 3 Polishing rate and surface roughness results of polished samples

[0063]

[0064] The polishing powder in the comparative example is made by physically mixing different components. The components maintain their original chemical and physical properties and do not undergo chemical bonding or valence changes. Therefore, no synergistic effect is produced during the polishing process. Due to the lack of synergistic effect, the polishing powder in the comparative example may exhibit low reactivity and oxidizing ability during the polishing process. The polishing powder in the embodiment is in the form of a composite oxide, in which different elements form stable compounds through chemical bonding. These elements can undergo valence changes during the polishing process, thereby producing a synergistic effect. This synergistic effect can significantly improve the oxidizing and reactivity of the polishing powder. Due to the presence of synergistic effect, the polishing powder in the embodiment exhibits higher polishing efficiency and better surface quality during the polishing process. The surface roughness of the material polished by the polishing fluid of the present invention is low. Taking the polishing of silicon carbide and glass as an example, the thickness of material removed from the surface of the polished material per minute per unit time is relatively high, indicating that the polishing fluid of the present invention reduces polishing damage while achieving a high polishing rate. The polishing powder or polishing fluid of the present invention can achieve a higher surface finish in a shorter time, thereby improving production efficiency.

[0065] It should be understood that the above-described specific embodiments of the present invention are merely illustrative or illustrative of the principles of the present invention and do not constitute limitations of the present invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present invention should be included within the scope of protection of the present invention. In addition, the appended claims are intended to cover all variations and modifications that fall within the scope and metes and bounds of the appended claims, or equivalents thereof.

[0066] The present invention has been described above with reference to the embodiments thereof. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents. Those skilled in the art may make various substitutions and modifications without departing from the scope of the present invention, and such substitutions and modifications are intended to fall within the scope of the present invention.

[0067] Although the embodiments of the present invention have been described in detail, it should be understood that the various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.

[0068] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A cerium-manganese composite polishing powder, characterized in that: The chemical formula of the polishing powder is Ce x Mn y M z O a D b ; Wherein, M is a cationic doping element, and D is an anionic doping element; 0.05≤x≤0.95, 0.05≤y≤0.95, 0≤z≤0.5, 0.5≤a≤2, 0≤b≤2.0, x+y+z=1, z and b are not 0 at the same time.

2. The cerium-manganese composite compound polishing powder according to claim 1, characterized in that The cationic doping element includes at least one of lanthanum, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, yttrium, titanium, vanadium, zirconium, hafnium, iron, cobalt, nickel, magnesium, calcium, strontium, aluminum, gallium, tin, antimony, silicon, boron, sodium and potassium.

3. The cerium-manganese composite compound polishing powder according to claim 1, characterized in that The anion doping element includes at least one of F, Cl, P, N and S.

4. The cerium-manganese composite compound polishing powder according to claim 1, characterized in that The median particle size D of the cerium-manganese composite polishing powder 50 0.01~3.0μm, and meet D 10 ≥0.5D 50 , D 90 ≤2.5D 50 .

5. A polishing liquid, characterized in that: The polishing liquid comprises a polishing slurry and a diluent, wherein the polishing slurry comprises the polishing powder according to any one of claims 1 to 4; and the mass ratio of the polishing slurry to the diluent is 1:5-30.

6. A polishing liquid according to claim 5, characterized in that: The polishing slurry further comprises a dispersant and water, and the polishing powder content in the polishing slurry is 1 wt% to 40 wt%.

7. The polishing liquid according to claim 6, characterized in that The content of the dispersant is 0.01wt% to 5wt% of the mass of the polishing slurry, and the dispersant includes amino trimethylene phosphonic acid, amino trimethylene phosphonic acid sodium salt, sodium hexametaphosphate, cetyltrimethylammonium bromide, sodium lauryl sulfate, sodium lauryl sulfonate, triethanolamine lauryl sulfate, ammonium lauryl sulfate, polyoxyethylene alkyl ether sulfate triethanolamine, polyethylene glycol, polyvinyl alcohol, polyacrylic acid, polyacrylamide, ammonium polyacrylate, acrylic acid and acrylamide copolymer, polymethacrylate, carboxymethyl cellulose, potassium carboxymethyl cellulose, sodium carboxymethyl cellulose, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene octadecyl ether, polyoxyethylene oleyl ether, polyoxyethylene higher alcohol ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyoxyalkylene alkyl ether At least one of polyoxyethylene ethers, polyoxyethylene derivatives, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tetraoleate, polyethylene glycol monolaurate, polyethylene glycol monostearate, polyethylene glycol distearate, polyethylene glycol monooleate, polyoxyethylene alkylamine, polyoxyethylene hydrogenated castor oil, 2-hydroxyethyl methacrylate, alkylalkanolamine, polyvinylpyrrolidone, coconut amine acetate, octadecylamine acetate, dodecyl betaine, octadecyl betaine, lauryl dimethylamine oxide and 2-alkyl-N-carboxymethyl-hydroxyethylimidazolinium betaine.

8. The polishing liquid according to claim 5, characterized in that The diluent includes an oxidant, a stabilizer and water.

9. The polishing liquid according to claim 8, characterized in that The oxidant comprises at least one of hydrogen peroxide, permanganate, persulfate, permanganic acid, hypochlorite, perchloric acid and ceric ammonium nitrate, and the content of the oxidant is 0.1wt% to 40wt% of the mass of the diluent; The stabilizer includes at least one of nitrate, sulfate, chloride, halide and sol, and the content of the stabilizer is 0.01wt% to 5wt% of the mass of the diluent.

10. Use of the polishing powder according to any one of claims 1 to 4 and / or the polishing liquid according to any one of claims 5 to 9 in the fields of silicon carbide, carbon-containing materials, flat glass, mobile phone cover glass, optical glass, liquid crystal display glass, glass substrates and integrated circuits.

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