B doping-based CBRAM device, preparation method and application

Abstract

The invention discloses a B-doping-based CBRAM device, a preparation method and application, a bottom electrode, a middle layer and a top electrode are arranged in the CBRAM device, the middle layer is located on the surface of one side of the bottom electrode, and the top electrode is located on the surface of the side, away from the bottom electrode, of the middle layer; wherein the material of the middle layer is B-doped SiO2. The preparation method comprises the following steps: providing a bottom electrode; preparing an intermediate layer on the surface of the bottom electrode; preparing a top electrode on the surface of one side, far away from the bottom electrode, of the middle layer; wherein the material of the middle layer is B-doped SiO2 (silicon dioxide). Therefore, B atoms are doped in the SiO2 resistive layer, the type, distribution and concentration of defects in the device are improved by utilizing the characteristics of the B atoms, the randomness of conductive wire growth is reduced, and the working power consumption is greatly reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of microelectronic integrated circuits, and in particular to a B-doped CBRAM device, a preparation method and an application thereof. Background Art

[0002] It's important to note that in recent years, with the widespread use of consumer electronics like smartphones and tablets, and the rapid development of technologies like the internet, artificial intelligence, and machine learning, the amount of global data is growing exponentially. Furthermore, modern technological applications are placing increasing demands on memory performance. Consequently, market demand for non-volatile memory with high storage density, low power consumption, and high read / write speeds continues to grow.

[0003] Currently, the main non-volatile memory device technology routes are concentrated in Flash (flash memory), PCM (phase change memory), FeRAM (random access memory technology), MRAM (non-volatile magnetic random access memory), and CBRAM (conductive bridging random access memory). However, the mainstream Flash in the market faces the physical limitations of high integration and high power consumption under nano-scale miniaturization processes. New devices such as PCM, FeRAM, and MRAM have CMOS process compatibility issues and cannot meet the needs of ultra-large-scale integrated production. CBRAM devices have attracted widespread attention from academia and industry due to their high storage density, compatibility with CMOS front-end and back-end processes, fast operation speed, and low power consumption. Despite this, traditional CBRAM currently has problems such as large performance fluctuations and poor durability, consistency, and retention characteristics. Summary of the Invention

[0004] The object of the present invention is to provide a B-doped CBRAM device, a preparation method and an application thereof, so as to solve the problem of how to reduce the operating energy consumption of the CBRAM device in the prior art.

[0005] To solve the above technical problems, the present invention provides a method for preparing a B-doped CBRAM device, comprising the following steps:

[0006] providing a bottom electrode;

[0007] preparing an intermediate layer on the surface of the bottom electrode;

[0008] A top electrode is formed on a surface of the intermediate layer away from the bottom electrode;

[0009] Wherein, the intermediate layer material is B-doped SiO2.

[0010] In one embodiment, the step of preparing an intermediate layer on the surface of the bottom electrode comprises:

[0011] Pre-treating the bottom electrode;

[0012] SiO2 and B are used as target materials, and a B-doped SiO2 film is deposited on the surface of the pretreated bottom electrode by radio frequency sputtering to serve as an intermediate layer.

[0013] In one embodiment, the method of using SiO2 and B as target materials and depositing a B-doped SiO2 film as an intermediate layer on the surface of the pretreated bottom electrode by radio frequency sputtering includes:

[0014] introducing an inert gas into the sputtering vacuum chamber at a first preset flow rate, and controlling the pressure in the sputtering vacuum chamber to a first target pressure;

[0015] The radio frequency sputtering power is controlled to be a first target power, and SiO2 and B are used as target materials to be sputtered and deposited on the bottom electrode to obtain an intermediate layer.

[0016] In one embodiment, the step of preparing a top electrode on a surface of the intermediate layer away from the bottom electrode comprises:

[0017] Pre-treating the intermediate layer;

[0018] Using metallic copper or silver as a target material, a copper or silver film is deposited on the surface of the pretreated intermediate layer by magnetron sputtering to serve as a top electrode.

[0019] In one embodiment, the method of using metallic copper or silver as a target and depositing a copper or silver thin film as a top electrode on the surface of the pretreated intermediate layer by magnetron sputtering comprises:

[0020] introducing an inert gas into the sputtering vacuum chamber at a second preset flow rate, and controlling the pressure in the sputtering vacuum chamber to a second target pressure;

[0021] The magnetron sputtering power is controlled to be a second target power, and metal copper or silver is used as a target material to be sputtered and deposited on the pretreated intermediate layer to obtain a top electrode.

[0022] In one embodiment, the sputtering method used in preparing the intermediate layer is radio frequency sputtering, and the sputtering method used in preparing the top electrode is direct current magnetron sputtering.

[0023] The present invention also provides a B-doped CBRAM device based on the above-mentioned preparation method, comprising: a bottom electrode, an intermediate layer and a top electrode; wherein,

[0024] The middle layer is located on one side of the bottom electrode, and the top electrode is located on the side of the middle layer away from the bottom electrode;

[0025] The material of the intermediate layer is B-doped SiO2.

[0026] In one embodiment, the material of the top electrode is Cu or Ag, and the material of the bottom electrode is one of Ti, Pt, Au, Al, W, and TiN.

[0027] In one embodiment, the top electrode is rectangular or circular in shape. If it is rectangular, the side length is 0.1 mm to 1 mm; if it is circular, the diameter is 0.05 mm to 0.5 mm.

[0028] The present invention also provides an application in neuromorphic computing, based on the above-mentioned B-doped CBRAM device, or the B-doped CBRAM device prepared by the above-mentioned preparation method.

[0029] The present invention provides a boron-doped CBRAM device, preparation method, and application. The CBRAM device comprises a bottom electrode, an intermediate layer, and a top electrode. The intermediate layer is located on one surface of the bottom electrode, and the top electrode is located on the surface of the intermediate layer away from the bottom electrode. The intermediate layer is made of boron-doped SiO2. By doping boron atoms in the SiO2 resistive switching layer, their properties are utilized to improve the type, distribution, and concentration of defects within the device, reduce the randomness of conductive filament growth, and significantly reduce operating power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Schematic diagram of the structure of an embodiment of a B-doped CBRAM device according to the present invention;

[0031] Figure 2 Schematic diagram of the three-dimensional structure of the B-doped CBRAM device of the present invention;

[0032] Figure 3 This is an XPS analysis chart of B, Si, and O elements in the B-doped CBRAM device of the present invention;

[0033] Figure 4 is the atomic ratio of B, Si, and O elements in the B-doped CBRAM device of the present invention;

[0034] Figure 5 Schematic diagram of a process of an embodiment of a B-doped CBRAM device according to the present invention;

[0035] Figure 6 A comparison diagram of the resistive switching principle of the B-doped CBRAM device of the present invention;

[0036] Figure 7 This is a forming curve diagram of the B-doped low-power CBRAM device prepared in Experimental Example 1 of the present invention;

[0037] Figure 8This is an IV curve of the B-doped low-power CBRAM device prepared in Experimental Example 1 of the present invention;

[0038] Figure 9 This is a resistance state distribution diagram of the low-power CBRAM device based on B doping prepared in Experimental Example 1 of the present invention;

[0039] Figure 10 This is a forming voltage diagram of a low-power CBRAM device without B doping prepared in comparative experimental example 1 of the present invention;

[0040] Figure 11 This is an IV curve of a low-power CBRAM device without B doping prepared in Comparative Experimental Example 1 of the present invention;

[0041] Figure 12 This is an IV curve of the B-doped low-power CBRAM device prepared in Experimental Example 2 of the present invention;

[0042] Figure 13 This is an IV curve of the B-doped low-power CBRAM device prepared in Experimental Example 3 of the present invention;

[0043] Figure 14 FIG. 4 is a flow chart of another embodiment of a B-doped CBRAM device according to the present invention. DETAILED DESCRIPTION

[0044] The following, in conjunction with the accompanying drawings and specific embodiments, further describes in detail a B-doped CBRAM device, preparation method, and application proposed by the present invention. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clarify the purpose of illustrating the embodiments of the present invention.

[0045] Example 1

[0046] Figure 1 This is a schematic diagram of the structure of an embodiment of a B-doped CBRAM device provided by the present invention. In this embodiment, the B-doped CBRAM device includes a substrate 40, a bottom electrode 30, an intermediate layer 20, and a top electrode 10. The bottom electrode 30 is located on one surface of the substrate 40, the intermediate layer 20 is located on the side of the bottom electrode 30 away from the substrate 40, and the top electrode 10 is located on the side of the intermediate layer 20 away from the bottom electrode 30. The intermediate layer 20 is made of B-doped SiO2.

[0047] In the specific implementation, such as Figure 2As shown in the figure, CBRAM is mainly divided into three layers, namely the top electrode 10, the middle layer 20, and the bottom electrode 30. The top electrode 10 is made of a dot-shaped metal element Cu with a purity of 99.99%, and its shape is rectangular or circular. If it is rectangular, its side length is 0.1mm to 1mm, and if it is circular, its radius is 0.05 to 0.5mm. Figure 3 、 Figure 4 As shown, the middle layer 20 is composed of B-doped SiO2, in which the doping content of B atoms accounts for 1.18%, Si atoms account for 32.18%, and O atoms account for 66.64%. The bottom electrode 30 is composed of Pt material, and the metal inert electrode Pt film is plated on the Ti film, and Si serves as the bottom substrate 40. By applying an external voltage between the top electrode 10 and the bottom electrode 30, the basic resistance conversion function of CBRAM is realized. Specifically, the Cu electrode and the Pt electrode are connected to external signal excitation to form a current loop, and the external voltage, current limiting and pulse signal are regulated. After the resistance change condition is met, the high resistance state and low resistance state of CBRAM are switched, thereby completing the storage of information data. In addition, the relevant characteristics of biological synapses can be simulated under the action of external excitation, promoting the application of neuromorphic computing.

[0048] In this embodiment, a bottom electrode, an intermediate layer, and a top electrode are provided in the CBRAM device. The intermediate layer is located on one surface of the bottom electrode, and the top electrode is located on the surface of the intermediate layer away from the bottom electrode. The intermediate layer is made of B-doped SiO2. By doping B atoms in the SiO2 resistive switching layer, their properties are utilized to improve the type, distribution, and concentration of defects within the device, reduce the randomness of conductive filament growth, and significantly reduce operating power consumption.

[0049] Example 2

[0050] Figure 5 FIG. 1 is a flow chart of an embodiment of a method for preparing a B-doped CBRAM device according to the present invention.

[0051] Based on the above-mentioned first embodiment, the present invention proposes an embodiment of a method for preparing a CBRAM device based on B doping.

[0052] In this embodiment, the method for preparing a CBRAM device based on B doping includes:

[0053] Step S10: providing a bottom electrode.

[0054] It should be understood that the embodiment of the present invention is implemented by a device for manufacturing a B-doped CBRAM device. The device for manufacturing a B-doped CBRAM device has functions such as data processing, data communication, and program execution.

[0055] In a specific implementation, the present invention optimizes the stability and consistency of the device by doping with B atoms. The doped B atoms change the lattice structure of SiO2, the number and type of chemical bonds and defects. The doped B atoms will reduce the formation energy of oxygen vacancies or silicon vacancies in the middle layer, increase the number of these defects, directly affect the migration and diffusion of Cu ions, and further affect the growth morphology and path of the conductive filament. Figure 6 As shown in the figure, in the B-doped CBRAM device, the conductive filament is composed of a mixture of Cu ions and oxygen vacancies. However, due to the presence of more oxygen vacancies participating in the growth of the conductive filament, the conductive filament is more stable and has better consistency during repeated cycles of set and reset. In addition, B doping changes the lattice structure of SiO2, forming BO-Si bonds, which is beneficial to enhancing conductivity and reducing forming voltage. Under the combined influence of the number of defects and the lattice structure, a thicker conductive filament is formed, and a resistance switching voltage of up to 10 is achieved through a smaller resistance switching voltage (set, reset voltage). 3 storage window and improve the stability of CBRAM devices.

[0056] It should be noted that CBRAM devices achieve data storage by transitioning between high and low resistance states. With the active electrode as the positive electrode and the inert electrode as the negative electrode, a certain external positive voltage is applied to achieve the transition from high resistance state to low resistance state. This process is called set, and the corresponding voltage is called set voltage. On the contrary, on the basis of the above, a certain negative voltage is applied to change the device from low resistance state to high resistance state, which is called reset, and the corresponding voltage is called reset voltage. Usually, the Forming voltage of traditional CBRAM devices is large (>5V), the set voltage is greater than 2V, the absolute value of the reset voltage is greater than 2V, the consistency of high and low resistance and resistance change voltage is poor, and the stability is poor in multiple cycle tests. The low-power B-doped CBRAM device prepared by the present invention has better performance. For example, the Forming voltage is about 1.47V, the average set voltage is about 1.2V, the average reset voltage is about -1.1V, and the storage window size reaches 10 3 Obviously, the B-doped CBRAM device prepared by the present invention greatly reduces the operating power consumption.

[0057] Step S20: preparing an intermediate layer on the surface of the bottom electrode.

[0058] In a specific implementation, the bottom electrode is pretreated; an inert gas is introduced into the sputtering vacuum chamber at a first preset flow rate, and the pressure in the sputtering vacuum chamber is controlled to a first target pressure; the RF sputtering power is controlled to the first target power, and SiO2 and B are used as target materials to obtain an intermediate layer by sputtering deposition on the bottom electrode.

[0059] Step S30: preparing a top electrode on the surface of the intermediate layer away from the bottom electrode.

[0060] In a specific implementation, a Cu film is deposited on a B-doped SiO2 film. The specific steps are as follows: After removing the sample, retain the insulating adhesive attached to the Pt target. A mask is placed over one side of the B-doped SiO2 film and secured with insulating adhesive. The mask apertures are either square or circular, with a side length of 0.1mm to 1mm for the square and a radius of 0.05 to 0.5mm for the circular. Therefore, the size and shape of the Cu electrodes produced match the mask. The tray with the mask is placed into a small chamber, and the steps for preparing the intermediate layer are repeated, except that the power switch is replaced with the DC sputtering power switch corresponding to the Cu target. However, it should be noted that the fabrication process parameters are not completely identical. As follows: at room temperature (25°C), the argon flow rate is controlled at 40 sccm, the sputtering chamber pressure is 0.37 Pa, the Cu sputtering power is 10 W, the main sputtering time is 30 minutes, and the pre-sputtering time is 3 minutes. After sputtering, the sample is removed and the insulating adhesive is removed to obtain a CBRAM device with circular or square Cu electrodes.

[0061] It should be noted that after the device 1 was prepared, named Experimental Example 1, the following experimental preparations were also performed:

[0062] Experimental Example 2

[0063] The preparation method and device structure of device 2 are the same as those of device 1. The difference is that in the step of preparing the B-doped SiO2 film in device 1, the sputtering power of the B target is 5W, and in the step of preparing the B-doped SiO2 film in device 2, the sputtering power of the B target is 8W. Other parameters are the same as those in experimental example 1.

[0064] Experimental Example 3

[0065] The preparation method and device structure of device 3 are the same as those of device 1. The difference is that in the step of preparing the B-doped SiO2 film of device 3, the sputtering power of the B target is 10W, and the other parameters are the same as those of experimental example 1.

[0066] Comparative Experiment 1

[0067] The preparation method and device structure of device 4 are the same as those of device 1. The difference is that in the step of preparing the B-doped SiO2 film of device 4, the sputtering power of the B target is 0W, and the other parameters are the same as those of experimental example 1.

[0068] Performance testing is performed to prove that the technical problem of the present invention can be solved. The process is as follows:

[0069] The CBRAM devices prepared in Experimental Examples 1 to 3 and Comparative Experimental Example 1 were subjected to corresponding performance tests. All tests were performed on an Agilent B1500A semiconductor parameter analyzer test platform. Here, the CBRAM device in Experimental Example 1 is mainly described in detail.

[0070] First, the resistive IV characteristics of the CBRAM device prepared in Experimental Example 1 were tested. It was placed on the probe station of the Agilent B1500A semiconductor parameter analyzer. The positive probe was closely contacted with the Cu top electrode of the CBRAM device. Similarly, the negative probe was closely contacted with the Pt bottom electrode. A DC voltage of 0V to 3V was applied to the Cu electrode to perform the forming process. Figure 7 As shown in the figure (the sputtering power of target B is 5W), when the voltage is 1.47V, the resistance state of the CBRAM device changes from the initial high resistance state to the low resistance state. This voltage is the forming voltage. Next, a bidirectional scanning voltage cycle IV test is performed. After 50 scanning voltage cycle tests, the IV curve is obtained, as shown in the figure below. Figure 8 As shown (the sputtering power of target B is 5w).

[0071] The IV curve exhibits a distinct bipolar resistance transition characteristic. A sweep voltage cycle consists of four steps: first, from 0V to 2V, then from 2V to 0V, then from 0V to -2.5V, and finally from -2.5V to 0V. Each sweep cycle has 101 steps. To prevent device breakdown due to excessive current during testing, a 500μA current limit is set during the set phase. As the voltage sweeps from 0V to 2V, the current flowing through the device gradually increases. When the voltage reaches approximately 0.6-1.8V, the current suddenly increases, transitioning the device from a high-resistance state to a low-resistance state. This process is called the set phase. When the voltage sweeps from 0V to -2.5V, the current initially increases, then suddenly decreases when the voltage reaches approximately -1.5V, transitioning the device from a low-resistance state back to a high-resistance state. This is called the reset phase. By manipulating the device's resistance state by controlling the external stimulus, data storage can be achieved. The low-resistance state of the CBRAM device corresponds to the digital signal "0", and the high-resistance state corresponds to the digital signal "1". From the perspective of multiple scanning cycles, the device has non-volatile characteristics and good retention characteristics.

[0072] The resistance values ​​of the high-resistance state and the low-resistance state of the CBRAM device obtained in Experimental Example 1 were read at a voltage of 0.1 V to obtain a resistance distribution diagram of the device, as shown in FIG. Figure 9 As shown in the figure (the sputtering power of target B is 5W), it can be seen that the storage window of the CBRAM device reaches an average of 10 3 As described above, it can be used as an excellent nonvolatile memory device.

[0073] A sweep voltage from 0V to 10V is applied to the Cu electrode of the CBRAM device prepared in Comparative Example 1, and a current limit of 10μA is set. It can be observed that the current reaches the current limit when the voltage sweeps to about 4.6V, indicating that the forming voltage is 4.6V. Figure 10 As shown (the sputtering power of target B is 0w); after the Forming process, the IV curve of the CBRAM device prepared in Comparative Example 1 was obtained in the same manner as in Example 1 above, and the results are shown in FIG. Figure 11 As shown (the sputtering power of target B is 0W). By comparison, it can be found that the transition voltage consistency, window size, and forming voltage of the undoped CBRAM device prepared in Comparative Example 1 are not as good as those of the B-doped CBRAM device prepared in Example 1.

[0074] The IV curves of the CBRAM devices obtained in Experimental Examples 2 and 3 were obtained by the same method as in Experimental Example 1. The results are as follows: Figure 12 (The sputtering power of target B is 8w), Figure 13 (the sputtering power of the B target is 10W). As shown in Examples 2 to 3, the B-doped CBRAM devices prepared also have a series of advantages such as low transition voltage and high stability, but when the B sputtering power is 5W, they show even better performance.

[0075] This embodiment proposes a method for fabricating a B-doped CBRAM device, comprising the following steps: providing a bottom electrode; forming an intermediate layer on the surface of the bottom electrode; and forming a top electrode on the surface of the intermediate layer away from the bottom electrode. The intermediate layer is made of B-doped SiO2. By doping B atoms in the SiO2 resistive switching layer, their properties are utilized to improve the type, distribution, and concentration of defects within the device, reduce the randomness of conductive filament growth, and significantly reduce operating power consumption.

[0076] Example 3

[0077] Figure 14 This is a flow chart of another embodiment of the method for preparing a CBRAM device based on B doping according to the present invention. Figure 5 The first embodiment of the method for preparing a CBRAM device based on B doping is shown, and the second embodiment of the method for preparing a CBRAM device based on B doping of the present invention is proposed.

[0078] Step S20 in the second embodiment includes:

[0079] Step S201: pre-processing the bottom electrode.

[0080] It should be noted that the substrate material containing Pt on the surface is cleaned. Stick insulating tape on one edge of the Pt and fix it on the sample tray in the magnetron sputtering equipment; clean the Si substrate. First, place the prepared 1cm×1cm Pt substrate in a beaker and pour in an appropriate amount of acetone for cleaning. Since acetone is a volatile solution, it needs to be sealed with plastic wrap and then ultrasonically cleaned for 30 minutes. This step is mainly to remove impurities such as organic matter. After cleaning, remove the substrate with tweezers and place it in another beaker. Pour in anhydrous ethanol and wash it twice. After sealing, ultrasonically clean it for 20 minutes. This step mainly removes acetone and other surface contaminants. Finally, place the substrate in a beaker filled with deionized water and ultrasonically clean it for 10 minutes. After the ultrasonic cleaning is completed, blow it dry and set aside.

[0081] Step S202: SiO2 and B are used as target materials, and a B-doped SiO2 film is deposited on the surface of the pre-treated bottom electrode by radio frequency sputtering to obtain the intermediate layer.

[0082] It should be noted that the present invention uses co-sputtering to prepare B-doped SiO2 thin films. By regulating the sputtering temperature, sputtering pressure, sputtering power, sputtering time, and argon gas flow rate, high-performance CBRAM devices can be fabricated. Specifically, at room temperature (25°C), the argon gas flow rate is controlled at 40 sccm, the sputtering chamber pressure is 0.37 Pa, the SiO2 and B sputtering powers are 50 W and 5 W, respectively, the main sputtering time is 30 minutes, and the pre-sputtering time is 3 minutes.

[0083] In the specific implementation, firstly, a metal Cu target with a purity of 99.99% was installed on the DC sputtering target holder of the magnetron sputtering equipment, and a SiO2 target and a B target with a purity of 99.99% were installed on the RF sputtering target holder, and the molecular pump and mechanical pump were turned on to pump air to make the pressure of the sputtering vacuum chamber lower than 2×10 -4 Pa. Turn on the switches of argon, nitrogen and circulating cooling water. Then put the Pt substrate cleaned in the first step into the small chamber and wait until the pressure in the small chamber reaches 5×10 -3 Pa, transfer the Pt substrate to the vacuum sputtering chamber. After adjusting according to the above process parameters, turn on the RF power switch, enter the process parameter file, check the working status, and start the co-sputtering of SiO2 and B. Then carry out the sputtering process in sequence according to the set process parameters. First, pre-sputtering is performed to remove contaminants on the surface of the target material. Then formal sputtering is performed to co-sputter B and SiO2 target materials on the Pt substrate. After the sputtering deposition is completed, the system pressure in the small chamber is restored to atmospheric pressure, the experimental substrate is removed from the magnetron sputtering instrument, and the RF power supply and the switches of argon, nitrogen, and circulating cooling water are turned off. A B-doped SiO2 film can be obtained.

[0084] In this embodiment, a bottom electrode is provided and pretreated. A B-doped SiO2 thin film, serving as the intermediate layer, is deposited on the pretreated bottom electrode surface via radio frequency sputtering using SiO2 and B as targets. A top electrode is formed on the surface of the intermediate layer away from the bottom electrode. The intermediate layer is made of B-doped SiO2. By doping B atoms in the SiO2 resistive switching layer, their properties are utilized to improve the type, distribution, and concentration of defects within the device, reduce the randomness of conductive filament growth, and significantly reduce operating power consumption.

[0085] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A method for preparing a B-doped CBRAM device, characterized in that: The following steps are involved: providing a bottom electrode; preparing an intermediate layer on the surface of the bottom electrode; A top electrode is formed on a surface of the intermediate layer away from the bottom electrode; Wherein, the intermediate layer material is B-doped SiO2.

2. The method for preparing a B-doped CBRAM device according to claim 1, wherein: The step of preparing an intermediate layer on the surface of the bottom electrode comprises: Pre-treating the bottom electrode; SiO2 and B are used as target materials, and a B-doped SiO2 film is deposited on the surface of the pretreated bottom electrode by radio frequency sputtering to serve as an intermediate layer.

3. The method for preparing a B-doped CBRAM device according to claim 2, wherein: The method uses SiO2 and B as target materials and deposits a B-doped SiO2 film as an intermediate layer on the surface of the pretreated bottom electrode by radio frequency sputtering, including: introducing an inert gas into the sputtering vacuum chamber at a first preset flow rate, and controlling the pressure in the sputtering vacuum chamber to a first target pressure; The radio frequency sputtering power is controlled to be a first target power, and SiO2 and B are used as target materials to be sputtered and deposited on the bottom electrode to obtain an intermediate layer.

4. The method for preparing a B-doped CBRAM device according to claim 1, wherein: The step of preparing a top electrode on a surface of the intermediate layer away from the bottom electrode comprises: Pre-treating the intermediate layer; Using metallic copper or silver as a target material, a copper or silver film is deposited on the surface of the pretreated intermediate layer by magnetron sputtering to serve as a top electrode.

5. The method for preparing a B-doped CBRAM device according to claim 4, wherein: The method uses copper or silver as a target material and deposits a copper or silver thin film as a top electrode on the surface of the pretreated intermediate layer by magnetron sputtering, comprising: introducing an inert gas into the sputtering vacuum chamber at a second preset flow rate, and controlling the pressure in the sputtering vacuum chamber to a second target pressure; The magnetron sputtering power is controlled to be a second target power, and metal copper or silver is used as a target material to be sputtered and deposited on the pretreated intermediate layer to obtain a top electrode.

6. The method for preparing a B-doped CBRAM device according to claim 1, wherein: The sputtering method used in preparing the intermediate layer is radio frequency sputtering, and the sputtering method used in preparing the top electrode is direct current magnetron sputtering.

7. A B-doped CBRAM device obtained by the preparation method according to any one of claims 1 to 6, characterized in that: include: bottom electrode, middle layer and top electrode; wherein, The middle layer is located on one side of the bottom electrode, and the top electrode is located on the side of the middle layer away from the bottom electrode; The material of the intermediate layer is B-doped SiO2.

8. The B-doped CBRAM device according to claim 7, wherein: The material of the top electrode is Cu or Ag, and the material of the bottom electrode is one of Ti, Pt, Au, Al, W, and TiN.

9. The B-doped CBRAM device according to claim 7, wherein: The top electrode is in a rectangular or circular shape. If it is rectangular, its side length is 0.1 mm to 1 mm; if it is circular, its diameter is 0.05 mm to 0.5 mm.

10. An application in neuromorphic computing, characterized in that A B-doped CBRAM device prepared by the preparation method according to any one of claims 1 to 6, or a B-doped CBRAM device according to any one of claims 7 to 9.

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