Preparation method of electronic device based on silicon carbonitride ceramic

Abstract

The invention discloses a preparation method of an electronic device based on silicon carbonitride ceramic. The preparation method comprises the following steps: processing a substrate; treating the polymer derived ceramic (PDC) and the photosensitizer; performance adjustment: when the temperature sensing performance is improved, adding 2-8 wt% of aluminum-doped zinc oxide into the precursor mixed solution to obtain a No.1 mixed solution; when the pressure sensing performance is improved, 10-40 wt% of titanium diboride is added into the precursor mixed solution to obtain a second mixed solution; when the microwave absorption performance is improved, 20 wt% of Fe-MOF, Co-MOF or Zr-MOF and 5 wt% of tri-n-butylamine are added into the precursor mixed solution, and a third mixed solution is obtained; carrying out printing / spinning molding and carrying out light curing; performing high-temperature sintering to obtain semiconductor ceramic SiCN; and connecting the semiconductor ceramic SiCN with a lead according to temperature and pressure sensing requirements and a microwave absorption function to obtain a finished product. The high-temperature-resistant graphite paper is used as a substrate material, temperature and pressure sensing and microwave transmission absorption structures are integrated through the modified SiCN ceramic, and integration of multiple functions is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor ceramic-based sensors, and in particular to a method for preparing an electronic device based on silicon carbonitride ceramics. Background Art

[0002] With the rapid development of modern electronic technology, the requirements for electronic devices to achieve higher functionality, integration, and reliability are becoming increasingly stringent. In fields such as aerospace, communications, and healthcare, electronic devices are often required to simultaneously monitor multiple physical quantities in complex environments and possess microwave absorption capabilities. Temperature and pressure are common physical quantities, and microwave absorption is crucial for reducing electromagnetic interference and improving device performance.

[0003] Traditional electronic devices typically only perform temperature detection, pressure detection, or microwave absorption, limiting their application. Simultaneously achieving these functions typically requires the combined use of multiple independent devices, which not only increases system complexity and cost but can also lead to performance degradation and reliability issues. Existing integrated temperature and pressure sensors often suffer from signal crosstalk during signal acquisition, are complex to manufacture, and rarely incorporate microwave absorption capabilities. Summary of the Invention

[0004] The object of the present invention is to provide a method for preparing an electronic device based on silicon carbonitride ceramics.

[0005] The innovation of the present invention lies in the use of high-temperature resistant graphite paper as the base material, and the integration of temperature and pressure sensing and microwave absorption structures through modified SiCN ceramics, thereby achieving the integration of multiple functions.

[0006] In order to achieve the above-mentioned object of the invention, the technical solution of the present invention is:

[0007] A method for preparing an electronic device based on silicon carbonitride ceramics, characterized by comprising the following steps:

[0008] (1) Processing substrate: using high temperature resistant graphite paper as substrate, and using atmospheric plasma machine to process the substrate to obtain a processed substrate;

[0009] (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide were placed in an oil bath at 90°C and stirred for 1 to 2 hours to allow the UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection;

[0010] (3) Performance adjustment: To improve the temperature sensing performance, 2-8 wt% of aluminum-doped zinc oxide is added to the precursor mixture to obtain a mixed solution No. 1;

[0011] To improve the pressure sensing performance, 10 to 40 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture;

[0012] When improving the microwave absorption performance, 20 wt% of Fe-MOF, Co-MOF or Zr-MOF and 5 wt% of tri-n-butylamine are added to the precursor mixture to obtain a third mixture; (4) printing / spinning and light curing: the first mixture is printed on one end of the treated substrate by dispensing printing, and the second mixture is printed on the other end of the treated substrate by dispensing printing, and ultraviolet curing is performed at a wavelength of 365 nm and a power of 2000 W for 2 to 10 minutes to obtain a first substrate, and the third mixture is collected on the back of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape;

[0013] (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace and sintering it at a high temperature under nitrogen protection at 1000-1400° C. for 4 hours to obtain semiconductor ceramic SiCN with temperature, pressure, sensing properties and microwave absorption functions;

[0014] (6) Connecting the semiconductor ceramic SiCN obtained in step (5) with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

[0015] Furthermore, in step (1), the substrate is treated with an atmospheric plasma machine for 5 to 10 minutes.

[0016] Furthermore, the addition amount of the aluminum-doped zinc oxide is 2wt%, 4wt%, 6wt% and 8wt%.

[0017] Furthermore, the addition amount of the titanium diboride is 10wt%, 20wt%, 30wt% or 40wt%.

[0018] The beneficial effects of the present invention are:

[0019] 1. The present invention utilizes high-temperature resistant graphite paper as the base material, and integrates temperature and pressure sensing and microwave absorption structures through modified SiCN ceramics, thereby achieving the integration of multiple functions with high integration, small size, softness and light weight.

[0020] 2. The present invention utilizes SiCN semiconductor ceramics as the main functional material and modifies them through chemical or physical modification, thereby improving the temperature, pressure sensing performance and microwave absorption function of the device. The temperature sensing ability of SiCN semiconductor ceramics is improved by adding aluminum-doped zinc oxide (AZO). This is because the doping of aluminum elements can adjust the band structure of zinc oxide, thereby optimizing its electrical properties, making it exhibit better performance in high-temperature sensing, and combining with SiCN with excellent thermal stability and mechanical strength to produce a synergistic effect, thereby enhancing the temperature sensing ability; by adding TiB2, the positive and negative temperature resistivity are balanced, eliminating the effect of temperature on pressure sensing at high temperatures, and improving the pressure sensing performance; by adding metal-organic frameworks (MOFs), the microwave absorption function of SiCN is improved. This is because the addition of MOFs creates a heterogeneous interface, enriches lattice strain and lattice defects, thereby increasing the dipole polarization effect, enhancing the microwave absorption function, and effectively reducing the reflection and scattering of electromagnetic waves.

[0021] 3. The electronic device of the present invention has a simple structure, is easy to manufacture, and has high reliability and stability, and is suitable for various fields such as aerospace, communications, and medical treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic structural diagram of a SiCN semiconductor ceramic integrating temperature, pressure sensing and microwave absorption functions according to Example 1 of the present invention, which includes a temperature sensing module, a pressure sensing module and a microwave absorption module.

[0023] Figure 2 This is a scanning electron microscope characterization image of the SiCN semiconductor ceramic after adding aluminum-doped zinc oxide in Example 2 of the present invention.

[0024] Figure 3 This is an atomic force microscope image of the SiCN semiconductor ceramic without titanium diboride modification according to Example 3 of the present invention.

[0025] Figure 4 This is an atomic force microscope image of the SiCN semiconductor ceramic modified with titanium diboride in Example 3 of the present invention. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the accompanying drawings. Example 1: A method for preparing an electronic device based on silicon carbonitride ceramics, comprising the following steps:

[0027] (1) Processing substrate: Using high temperature resistant graphite paper as the substrate, the substrate was processed using an atmospheric plasma machine to obtain a processed substrate, and the processing time was 5 minutes.

[0028] (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide were placed in an oil bath at 90°C and stirred for 1 to 2 hours to allow the UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection;

[0029] (3) Performance adjustment: To improve the temperature sensing performance, 2 wt% of aluminum-doped zinc oxide is added to the precursor mixture to obtain a mixed solution No. 1;

[0030] To improve the pressure sensing performance, 10 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture;

[0031] To improve the microwave absorption performance, 20 wt% Fe-MOF and 5 wt% tri-n-butylamine were added to the precursor mixture to obtain a mixture No. 3;

[0032] (4) Printing / spinning and light curing: Mixed solution No. 1 is printed on one end of the treated substrate by dispensing printing, and mixed solution No. 2 is printed on the other end of the treated substrate by dispensing printing, and then ultraviolet curing is performed at a wavelength of 365 nm and a power of 2000 W for 2 minutes to obtain a first substrate, and then mixed solution No. 3 is collected on the back of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape;

[0033] (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace, and sintering it at high temperature under nitrogen protection at 1000° C. for 4 hours to obtain semiconductor ceramic SiCN with temperature, pressure, and sensing properties and microwave absorption functions;

[0034] (6) Connecting the semiconductor ceramic SiCN obtained in step (5) with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

[0035] Example 2: A method for preparing an electronic device based on silicon carbonitride ceramics, comprising the following steps:

[0036] (1) Processing substrate: Using high temperature resistant graphite paper as the substrate, the substrate was processed using an atmospheric plasma machine to obtain a processed substrate, and the processing time was 7 minutes.

[0037] (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide were placed in an oil bath at 90°C and stirred for 1.2 h to allow the UV curing agent phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection;

[0038] (3) Performance adjustment: To improve the temperature sensing performance, 4 wt% of aluminum-doped zinc oxide was added to the precursor mixture to obtain a mixture No. 1;

[0039] To improve the pressure sensing performance, 20 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture;

[0040] To improve the microwave absorption performance, 20 wt% Co-MOF and 5 wt% tri-n-butylamine were added to the precursor mixture to obtain a mixture No. 3;

[0041] (4) Printing / spinning and light curing: Mixed solution No. 1 is printed on one end of the treated substrate by dispensing printing, and mixed solution No. 2 is printed on the other end of the treated substrate by dispensing printing, and then ultraviolet curing is performed at a wavelength of 365 nm and a power of 2000 W for 6 minutes to obtain a first substrate, and then mixed solution No. 3 is collected on the back plate of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape;

[0042] (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace, and sintering it at high temperature under nitrogen protection at 1100° C. for 4 hours to obtain semiconductor ceramic SiCN with temperature, pressure, and sensing properties and microwave absorption functions;

[0043] (6) Connecting the semiconductor ceramic SiCN obtained in step (5) with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

[0044] Example 3: A method for preparing an electronic device based on silicon carbonitride ceramics, comprising the following steps:

[0045] (1) Processing substrate: Using high temperature resistant graphite paper as the substrate, the substrate was processed using an atmospheric plasma machine to obtain a processed substrate, and the processing time was 8 minutes.

[0046] (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide were placed in an oil bath at 90°C and stirred for 1.5 h to allow the UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection;

[0047] (3) Performance adjustment: To improve the temperature sensing performance, 6 wt% of aluminum-doped zinc oxide was added to the precursor mixture to obtain a mixture No. 1;

[0048] To improve the pressure sensing performance, 30 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture;

[0049] To improve the microwave absorption performance, 20 wt% Zr-MOF and 5 wt% tri-n-butylamine were added to the precursor mixture to obtain a mixture No. 3;

[0050] (4) Printing / spinning and light curing: Mixed solution No. 1 is printed on one end of the treated substrate by dispensing printing, and mixed solution No. 2 is printed on the other end of the treated substrate by dispensing printing, and then ultraviolet light curing is performed at a wavelength of 365 nm and a power of 2000 W for 8 minutes to obtain a first substrate, and then mixed solution No. 3 is collected on the back plate of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape;

[0051] (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace, and sintering it at high temperature under nitrogen protection at 1300° C. for 4 hours to obtain semiconductor ceramic SiCN with temperature, pressure, and sensing properties and microwave absorption functions;

[0052] (6) Connecting the semiconductor ceramic SiCN obtained in step (5) with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

[0053] from Figure 3 、 Figure 4 It can be seen that before modification with titanium diboride, the surface of SiCN semiconductor is smooth; after modification with titanium diboride, the surface of SiCN semiconductor ceramic becomes rough. Titanium diboride particles increase the roughness of SiCN semiconductor ceramic, thereby improving the pressure sensing sensitivity of the semiconductor ceramic and improving the pressure sensing performance.

[0054] Example 4: A method for preparing an electronic device based on silicon carbonitride ceramics, comprising the following steps:

[0055] (1) Processing substrate: Using high temperature resistant graphite paper as the substrate, the substrate was processed using an atmospheric plasma machine to obtain a processed substrate, and the processing time was 10 minutes.

[0056] (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide were placed in an oil bath at 90°C and stirred for 1 to 2 hours to allow the UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection;

[0057] (3) Performance adjustment: To improve the temperature sensing performance, 8 wt% of aluminum-doped zinc oxide was added to the precursor mixture to obtain a mixed solution No. 1;

[0058] To improve the pressure sensing performance, 40 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture;

[0059] To improve the microwave absorption performance, 20 wt% Fe-MOF and 5 wt% tri-n-butylamine were added to the precursor mixture to obtain a mixture No. 3;

[0060] (4) Printing / spinning and light curing: Mixed solution No. 1 is printed on one end of the treated substrate by dispensing printing, and mixed solution No. 2 is printed on the other end of the treated substrate by dispensing printing, and then ultraviolet curing is performed at a wavelength of 365 nm and a power of 2000 W for 10 minutes to obtain a first substrate, and then mixed solution No. 3 is collected on the back of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape;

[0061] (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace, and sintering it at high temperature under nitrogen protection at 1400° C. for 4 hours to obtain semiconductor ceramic SiCN with temperature, pressure, and sensing properties and microwave absorption functions;

[0062] (6) Connecting the semiconductor ceramic SiCN obtained in step (5) with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

[0063] The embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

Claims

1. A method for preparing an electronic device based on silicon carbonitride ceramics, characterized in that: The following steps are involved: (1) Processing substrate: Using high temperature resistant graphite paper as substrate, use atmospheric plasma machine to process the substrate to obtain the processed substrate; (2) Treatment of polymer-derived ceramics (PDC) and photosensitizer: 95 wt% of ceramic precursor polysilazane and 5 wt% of UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide were placed in an oil bath at 90 °C and stirred for 1-2 h to allow the UV curing agent phenyl bis (2,4,6-trimethylbenzoyl) phosphine oxide to completely dissolve in the ceramic precursor polysilazane to obtain a precursor mixture. The entire process was carried out under nitrogen protection; (3) Performance adjustment: To improve the temperature sensing performance, 2-8 wt% of aluminum-doped zinc oxide is added to the precursor mixture to obtain a mixed solution No. 1; To improve the pressure sensing performance, 10-40 wt% of titanium diboride is added to the precursor mixture to obtain a second mixture; To improve microwave absorption performance, 20 wt% of Fe-MOF, Co-MOF, or Zr-MOF and 5 wt% of tri-n-butylamine were added to the precursor mixture to obtain a mixture No. 3; (4) Printing / spinning and light curing: Mixed solution No. 1 is printed on one end of the treated substrate by dispensing printing, and mixed solution No. 2 is printed on the other end of the treated substrate by dispensing printing, and then ultraviolet curing is performed at a wavelength of 365 nm and a power of 2000 W for 2 to 10 minutes to obtain the first substrate, and then mixed solution No. 3 is collected on the back of the first substrate by electrospinning, and freeze-dried to obtain a ceramic precursor device with a fixed shape; (5) High-temperature sintering to obtain semiconductor ceramic SiCN: placing the ceramic precursor described in step (4) in a tube furnace, and sintering it at a high temperature under nitrogen protection at 1000-1400 °C for 4 h to obtain semiconductor ceramic SiCN with temperature, pressure, sensing properties and microwave absorption functions; (6) The semiconductor ceramic SiCN obtained in step (5) is connected with leads according to the temperature and pressure sensing requirements and microwave absorption function to obtain a finished product.

2. The method for preparing an electronic device based on silicon carbonitride ceramics according to claim 1, characterized in that: In the step (1), the substrate is treated with an atmospheric plasma machine for 5 to 10 minutes.

3. The method for preparing an electronic device based on silicon carbonitride ceramics according to claim 1, characterized in that: The addition amount of the aluminum-doped zinc oxide is 2wt%, 4wt%, 6wt% and 8wt%.

4. The method for preparing an electronic device based on silicon carbonitride ceramics according to claim 1, wherein: The addition amount of the titanium diboride is 10wt%, 20wt%, 30wt% and 40wt%.

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