A chemical vapor deposition spray head and its processing technology

Abstract

This application relates to a chemical vapor deposition (CVD) spray head and its processing technology in the field of semiconductor technology. The CVD spray head includes: a spray disk with multiple air holes; a top cover disposed on one side of the spray disk and fixed to the spray disk, forming an air cavity between the top cover and the spray disk, and having air channels on the top cover; and a hollow connecting post disposed within the air cavity. The hollow connecting post is a cylindrical structure with openings at both ends, and its two ends are fixedly connected to the spray disk and the top cover, respectively. The CVD spray head of this application can effectively control the deformation of the spray disk, improve the consistency of the distance between each air hole and the wafer, thereby improving the performance of the device.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a chemical vapor deposition spray head and its processing technology. Background Technology

[0002] One of the core aspects of the integrated circuit industry is chip manufacturing, and the core of chip manufacturing is wafer fabrication. Gas spray heads are key components widely used in the thin-film and etching processes of wafer fabrication. Various process gases required for the process are evenly sprayed into the reaction chamber through the spray head to participate in plasma generation and reaction.

[0003] like Figure 1 As shown, a conventional spray head currently includes a spray plate 1 and a top cover 2 spaced above the spray plate 1. The edge of the spray plate 1 is connected to the top cover 2 by welding, so that an air cavity 5 is formed between the spray plate 1 and the top cover 2. The top cover 2 is provided with an air channel 6. The surface of the spray plate 1 is provided with uniformly distributed air holes along its thickness direction. The process gas enters the air cavity 5 through the air channel 6 and is uniformly sprayed onto the wafer surface through each air hole.

[0004] However, the working environment of the reaction chamber where the spray head, especially the spray plate, is located is a high-temperature environment. Under high temperature conditions, the spray plate is prone to thermal expansion and deformation. In particular, the heat is concentrated at the welding position between the edge of the spray plate and the top cover. As a result, under the action of thermal stress, the distance between each air hole and the wafer is inconsistent, which affects the uniformity of process gas spraying. In particular, the wafer film thickness produced under the edge of the spray plate deviates significantly from the standard value and is difficult to control, thus affecting the coating uniformity, resulting in inconsistent film thickness and affecting device performance. Summary of the Invention

[0005] In view of the problems existing in the background technology, this application provides a chemical vapor deposition spray head and its processing technology, which can effectively control the deformation of the spray disk, improve the consistency of the distance between each pore and the wafer, thereby improving the performance of the device.

[0006] According to one aspect of the present invention, a chemical vapor deposition spray head is provided, comprising: a spray disk having a plurality of air holes; a top cover disposed on one side of the spray disk and fixed thereto, forming an air cavity between the top cover and the spray disk, and having air passages on the top cover; and a hollow connecting column disposed within the air cavity, the hollow connecting column being a cylindrical structure open at both ends, the two ends of the hollow connecting column being fixedly connected to the spray disk and the top cover, respectively.

[0007] By using the chemical vapor deposition spray head in this technical solution, in the high-temperature environment of the reaction chamber, the heat from the jet disk can be guided to the top cover via the hollow connecting column, effectively preventing heat accumulation in the jet disk and improving the temperature uniformity of the jet disk. Furthermore, the hollow structure of the hollow connecting column reduces direct thermal contact between the jet disk and the top cover, forming a thermal buffer layer and reducing thermal shock. In addition, the hollow structure of the hollow connecting column allows the jet disk and the top cover to have a certain degree of freedom during thermal expansion, reducing stress concentration. This effectively prevents thermal expansion caused by jetting, thereby effectively controlling the deformation of the jet disk, improving the consistency of the distance between each pore and the wafer, and thus improving the performance of the manufactured device.

[0008] In some embodiments of the present invention, multiple hollow connecting columns are provided, and the multiple hollow connecting columns are arranged at intervals around the middle of the air cavity.

[0009] In some embodiments of the present invention, the number of hollow connecting columns is 10 to 14.

[0010] In some embodiments of the present invention, a plurality of the hollow connecting columns are distributed in a region of one-third to two-thirds of the radius of the air cavity.

[0011] In some embodiments of the present invention, the hollow connecting column includes a plurality of split sleeves arranged sequentially from the outside to the inside, with a gap between each two adjacent split sleeves. The length of the plurality of split sleeves decreases sequentially from the inside to the outside. One end of each split sleeve facing the top cover is fixedly connected to the top cover, and the other end of the innermost split sleeve is fixedly connected to the jet disc.

[0012] In some embodiments of the present invention, the number of the split sleeves is 3 to 5.

[0013] In some embodiments of the present invention, the length ratio of the innermost split sleeve to the outermost split sleeve is 1:(0.65~0.75).

[0014] In some embodiments of the present invention, the length ratio of the innermost split sleeve to the adjacent split sleeve is 1:(0.85~0.95).

[0015] According to another aspect of the present invention, a processing method for a chemical vapor deposition spray head is provided, which is applied to the above-mentioned chemical vapor deposition spray head, comprising the following steps: preparing an air jet disk and a top cover and processing a hollow connecting column, assembling the air jet disk, the hollow connecting column and the top cover to obtain the chemical vapor deposition spray head. Attached Figure Description

[0016] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0017] Figure 1 This is a schematic diagram of a spray head used in the background art of this application;

[0018] Figure 2 This is a schematic diagram of the overall structure of the chemical vapor deposition spray head of the present invention;

[0019] Figure 3 This is a cross-sectional view of the chemical vapor deposition spray head of the present invention;

[0020] Figure 4 This is a top view of the distribution of multiple hollow connecting columns on the jet disk according to the present invention;

[0021] Figure 5 This is a schematic diagram of the hollow connecting column in one embodiment of the present invention;

[0022] Figure 6 This is a dimensional specification diagram of the hollow connecting column in Embodiment 1 of the present invention;

[0023] Figure 7 This is an infrared thermal image of the jet disk in Embodiment 1 of the present invention;

[0024] Figure 8 This is a comparative example 1 of the present invention, an infrared thermal image of the jet disk.

[0025] The labels in the attached diagram represent the following: 1. Jet disc; 2. Top cover; 3. Hollow connecting column; 4. Air hole; 5. Air cavity; 6. Air passage; 7. Split sleeve; 8. First split sleeve; 9. Second split sleeve; 10. Third split sleeve; 11. Fourth split sleeve; 12. Air distribution plate. Detailed Implementation

[0026] It should be understood that the described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0027] In the following description, when referring to the accompanying drawings, the same numbers in different drawings denote the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0028] In the description of this application, it should be understood that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances. Furthermore, in the description of this application, unless otherwise stated, "multiple" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship.

[0029] This application discloses a chemical vapor deposition spray head. For example... Figure 2 and Figure 3 As shown, the chemical vapor deposition spray head includes a spray plate 1, a top cover 2, and a hollow connecting column 3; wherein, the spray plate 1 is provided with multiple air holes 4; the top cover 2 is located on one side of the spray plate 1 and is fixed to the spray plate 1, forming an air cavity 5 between the top cover 2 and the spray plate 1, and the top cover 2 is provided with air passages 6; the hollow connecting column 3 is located in the air cavity 5, and the hollow connecting column 3 is a cylindrical structure with openings at both ends, and the two ends of the hollow connecting column 3 are fixedly connected to the spray plate 1 and the top cover 2 respectively.

[0030] It should be understood that in this embodiment, the air cavity 5 covers the area where the air holes 4 are located on the jet disk 1, and the air channel 6 is connected to the air cavity 5. After the wafer to be processed is placed in the reaction chamber, the external process gas can enter the air cavity 5 through the air channel 6, and the process gas is evenly dispersed in the air cavity 5 and then evenly sprayed onto the surface of the wafer to be processed from each air hole 4.

[0031] By using the chemical vapor deposition spray head in this technical solution, in the high-temperature environment of the reaction chamber, the heat from the jet disk 1 can be guided to the top cover 2 above through the hollow connecting column 3, effectively avoiding local heat accumulation in the jet disk 1, improving the temperature uniformity of the jet disk 1, and the hollow structure of the hollow connecting column 3 can reduce the direct thermal contact between the jet disk 1 and the top cover 2, forming a thermal buffer layer and reducing thermal shock. In addition, the hollow structure of the hollow connecting column 3 allows the jet disk 1 and the top cover 2 to have a certain degree of freedom during thermal expansion, reducing stress concentration, thereby effectively avoiding thermal expansion caused by jetting. This can effectively control the deformation of the jet disk 1, improve the consistency of the distance between each gas hole 4 and the wafer, and thus improve the performance of the manufactured device.

[0032] In some embodiments of the present invention, the jet disk 1 and the top cover 2 are preferably circular, that is, a circular air cavity 5 is formed between the jet disk 1 and the top cover 2, and the air holes 4 on the jet disk 1 are evenly distributed in the area covered by the circular air cavity 5.

[0033] Furthermore, the end of the air passage 6 on the top cover 2 that connects to the air chamber 5 preferably corresponds to the center position of the air chamber 5.

[0034] In some embodiments of the present invention, such as Figure 2 and Figure 3 As shown, there are multiple hollow connecting columns 3, which are spaced apart around the middle of the air cavity 5. That is, on the side of the jet disk 1 facing the top cover 2, multiple hollow connecting columns 3 are spaced apart around the axis of the jet disk 1.

[0035] In this embodiment, the jet disk 1 and the top cover 2 are connected by multiple hollow connecting columns 3, and the multiple hollow connecting columns 3 are arranged at intervals around the middle of the air cavity 5. This can not only improve the effect of guiding the heat transfer of the jet disk 1, but also achieve a uniform heat conduction effect on the jet disk 1, effectively avoiding heat concentration in local areas of the jet disk 1, and in particular, effectively reducing the range and number of high-temperature areas generated at the edge of the jet disk 1.

[0036] In some embodiments of the present invention, the number of hollow connecting posts 3 can be 10 to 14, for example, the number of hollow connecting posts 3 can be 11, 12, 13 or 14, etc.

[0037] It should be noted that the number of hollow connecting columns 3 can be designed according to the size of the chemical vapor deposition spray head, so as to ensure the heat transfer efficiency and effect of the jet disk 1, while reducing the impact of the hollow connecting columns 3 on the space of the gas chamber 5, such as the dispersion of process gas.

[0038] Furthermore, the multiple hollow connecting columns 3 can be arranged in a circular array or in a polygonal pattern.

[0039] Specifically, in one embodiment of the present invention, such as Figure 2 and Figure 4 As shown, there are 12 hollow connecting columns 3 between the jet disk 1 and the top cover 2, and the 12 hollow connecting columns 3 are distributed in a hexagonal shape.

[0040] In some embodiments of the present invention, such as Figure 2 As shown, multiple hollow connecting columns 3 are distributed in the region of one-third to two-thirds of the radius of the air cavity 5. Preferably, multiple hollow connecting columns 3 are arranged in the region of one-half to two-thirds of the radius of the air cavity 5.

[0041] In this embodiment, by distributing multiple hollow connecting columns 3 near half the radius of the air cavity 5, especially with half the radius of the air cavity 5 biased towards the edge of the jet disk 1, the pressure of heat concentration in the local area at the edge of the jet disk 1 can be further reduced, thereby further reducing the possibility of deformation of the jet disk 1 due to thermal expansion.

[0042] In some embodiments of the present invention, such as Figure 4As shown, the hollow connecting column 3 includes multiple split sleeves 7 arranged sequentially from the outside to the inside. A gap is formed between each pair of adjacent split sleeves 7. The length of the multiple split sleeves 7 decreases sequentially from the inside to the outside. One end of each split sleeve 7 facing the top cover 2 is fixedly connected to the top cover 2, and the other end of the innermost split sleeve 7 is fixedly connected to the jet disc 1. That is, the length of the innermost split sleeve 7 is equal to the distance between the top cover 2 and the jet disc 1.

[0043] In this embodiment, the hollow connecting column 3 is configured as multiple split sleeves 7. The gap between two adjacent split sleeves 7 can form a heat conduction channel, which can quickly conduct the heat of the local high temperature area of ​​the jet disk 1 to the top cover 2 through the multiple split sleeves 7. The gap between the sleeves can form a natural convection or forced convection channel, which enhances the heat dissipation efficiency and avoids the increase of the connection area between the hollow connecting column 3 and the jet disk 1.

[0044] Furthermore, the present invention allows for thermal expansion differences between the other split sleeves 7 (excluding the innermost split sleeve 7) and the jet disc 1. That is, the other split sleeves 7 (excluding the innermost split sleeve 7) can be made of different materials than the innermost split sleeve 7. Preferably, the other split sleeves 7 (excluding the innermost split sleeve 7) are made of materials with stronger thermal conductivity to further improve thermal conductivity efficiency.

[0045] In some embodiments of the present invention, the split sleeve 7 preferably adopts a cylindrical structure, and the multiple split sleeves 7 of each hollow connecting column 3 are coaxially arranged.

[0046] In some embodiments of the present invention, the number of split sleeves 7 provided for each hollow connecting column 3 can be 2 to 5, for example, the number of split sleeves 7 can be 2, 3, 4 or 5, etc.

[0047] The number of split sleeves 7 provided for each hollow connecting column 3 is preferably 3 to 5.

[0048] It should be noted that the number of split sleeves 7 and the size of each split sleeve 7 can be designed according to the size of the chemical vapor deposition spray head and the requirements for heat conduction. While ensuring the heat conduction efficiency and effect of the jet disk 1, the impact of the split sleeves 7 on the space of the gas chamber 5, such as the dispersion of process gas, can be reduced.

[0049] Specifically, in one embodiment of the present invention, such as Figure 5As shown, the hollow connecting column 3 includes four coaxially fitted split sleeves 7. For ease of understanding, the four split sleeves 7 can be designated as the first split sleeve 8, the second split sleeve 9, the third split sleeve 10, and the fourth split sleeve 11. The lengths of the first split sleeve 8, the second split sleeve 9, the third split sleeve 10, and the fourth split sleeve 11 decrease sequentially. The outer diameter of the first split sleeve 8 is smaller than the inner diameter of the second split sleeve 9, the outer diameter of the second split sleeve 9 is smaller than the inner diameter of the third split sleeve 10, and the outer diameter of the third split sleeve 10 is smaller than the inner diameter of the fourth split sleeve 11. The top ends of the first split sleeve 8, the second split sleeve 9, the third split sleeve 10, and the fourth split sleeve 11 are connected to the top cover 2, and the bottom end of the first split sleeve 8 is connected to the jet disc 1.

[0050] In some embodiments of the present invention, the length ratio of the innermost split sleeve 7 to the outermost split sleeve 7 is 1:(0.65~0.75), preferably, the length ratio of the innermost split sleeve 7 to the outermost split sleeve 7 is 1:0.7.

[0051] In some embodiments of the present invention, the length ratio of the innermost split sleeve 7 to the adjacent split sleeve 7 is 1:(0.85~0.95), preferably, the length ratio of the innermost split sleeve 7 to the adjacent split sleeve 7 is 1:0.9.

[0052] In this invention, by setting the length ratio of the innermost split sleeve 7 to the outermost split sleeve 7 to 1:(0.65~0.75), and setting the length ratio of the innermost split sleeve 7 to the adjacent split sleeve 7 to 1:(0.85~0.95), that is, by selecting the length of the split sleeve 7 that is not connected to the jet disc 1 within the above range, a heat conduction channel can be better formed between adjacent split sleeves 7, thereby effectively transferring heat from the innermost split sleeve 7 to the other split sleeves 7 in sequence.

[0053] In some embodiments of the present invention, the edges of the top cover 2 and the jet disk 1 can be sealed and fixed by welding, and the hollow connecting column 3 can be connected between the top cover 2 and the jet disk 1 by welding or screw fixing.

[0054] In some embodiments of the present invention, a vent hole 4 (not shown) may be provided on the side wall of the hollow connecting column 3 so that when the hollow connecting column 3 is covered with the vent hole 4, the process gas in the air cavity 5 can enter the hollow connecting column 3 and be ejected from the vent hole 4 therein.

[0055] Preferably, the vent 4 is opened on the innermost split sleeve 7, and the vent 4 on the innermost split sleeve 7 is located on the length that can be covered by the adjacent split sleeve 7.

[0056] Furthermore, air vents 4 may be provided or not provided on the other split sleeves 7 besides the innermost split sleeve 7, as needed.

[0057] In some embodiments of the present invention, such as Figure 2 and Figure 3 As shown, the chemical vapor deposition spray head also includes a gas equalization plate 12. The gas equalization plate 12 is disposed in the gas cavity 5 and located at the opening of the gas channel 6 near one end of the gas cavity 5. The gas equalization plate 12 is spaced apart from the opening of the gas channel 6 and connected to the top cover 2. The process gas enters the gas channel 6 and first hits the gas equalization plate 12, and then spreads outwards.

[0058] This embodiment also proposes a processing technology for a chemical vapor deposition spray head, which is applied to the above-mentioned chemical vapor deposition spray head. The processing technology includes the following steps:

[0059] Prepare the jet disk 1 and top cover 2 and process the hollow connecting column 3. Assemble the jet disk 1, hollow connecting column 3 and top cover 2 to obtain a chemical vapor deposition spray head.

[0060] The processing technology of the chemical vapor deposition spray head in this application will be further described below with reference to specific embodiments.

[0061] Example 1

[0062] Hollow connecting column specifications as follows Figure 6 As shown (unit: mm), their quantity and distribution are as follows: Figure 2 As shown, the jet disk and top cover are prepared and the hollow connecting column is processed. Then the jet disk, hollow connecting column and top cover are assembled to obtain the chemical vapor deposition spray head.

[0063] Comparative Example 1

[0064] Prepare the jet disc and top cover, and weld the jet disc to the edge of the top cover to obtain the spray head.

[0065] Test case

[0066] Infrared thermal imaging tests were conducted on the spray heads prepared in Example 1 and Comparative Example 1, respectively. The thermal imaging image of the spray disc surface in Example 1 is shown below. Figure 7 As shown, the thermal image of the jet disk surface in Comparative Example 1 is as follows: Figure 8 As shown in the figure, by comparison, it can be seen that the edge of the jet disk in Comparative Example 1 has multiple areas with temperatures exceeding 550°C (red dots), while the edge temperature of the jet disk in Embodiment 1 of the present invention is significantly lower, and the high-temperature areas are significantly reduced, thereby greatly reducing the possibility of deformation of the jet disk.

[0067] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A chemical vapor deposition spray head, characterized in that, include: A jet disc, wherein the jet disc is provided with multiple air holes; A top cover is disposed on one side of the jet disk and fixed to the jet disk, and an air cavity is formed between the top cover and the jet disk. An air passage is provided on the top cover. A hollow connecting column is provided inside the air cavity. The hollow connecting column is a cylindrical structure with openings at both ends. The two ends of the hollow connecting column are fixedly connected to the jet disk and the top cover, respectively. The hollow connecting column is provided in multiple ways, and the multiple hollow connecting columns are arranged at intervals around the middle of the air cavity. The hollow connecting column includes multiple split sleeves that are sequentially nested from the outside to the inside. A gap is formed between each pair of adjacent split sleeves. The length of the multiple split sleeves decreases sequentially from the inside to the outside. One end of each split sleeve facing the top cover is fixedly connected to the top cover, and the other end of the innermost split sleeve is fixedly connected to the jet disc.

2. The chemical vapor deposition spray head according to claim 1, characterized in that, The number of hollow connecting columns is 10 to 14.

3. The chemical vapor deposition spray head according to claim 1, characterized in that, Multiple hollow connecting columns are distributed in the region of one-third to two-thirds radius of the air cavity.

4. The chemical vapor deposition spray head according to claim 1, characterized in that, The number of the split sleeves is 3 to 5.

5. The chemical vapor deposition spray head according to claim 4, characterized in that, The length ratio of the innermost split sleeve to the outermost split sleeve is 1:(0.65~0.75).

6. The chemical vapor deposition spray head according to claim 4, characterized in that, The length ratio of the innermost split sleeve to the adjacent split sleeve is 1:(0.85~0.95).

7. A processing method for a chemical vapor deposition spray head, applied to the chemical vapor deposition spray head according to any one of claims 1 to 6, characterized in that, Includes the following steps: Prepare the jet disk and top cover, and process the hollow connecting column. Assemble the jet disk, hollow connecting column and top cover to obtain the chemical vapor deposition spray head.

Images