Wafer bearing device and preparation method thereof

Abstract

The invention provides a wafer bearing device and a preparation method thereof. The preparation method comprises the following steps: providing an iron support frame; the iron support frame is annular; forming a first material layer on the surface of the iron support frame; the surface of the iron supporting frame comprises an inner side face, an outer side face, a top face and a bottom face. Removing the first material layer on the bottom surface of the iron support frame to expose the bottom surface of the iron support frame; placing a covering mold on the bottom surface of the iron support frame; the covering mold is circular; the covering mold and the iron supporting frame are concentrically arranged, and the covering mold makes contact with the first part of the bottom face of the iron supporting frame. The first part is annular, and the outer diameter of the first part is smaller than the outer diameter of the iron supporting frame and larger than the inner diameter of the iron supporting frame. A second material layer is formed on a second part, exposed relative to the covering mold, of the bottom surface of the iron supporting frame through the spraying technology; the first material layer and the second material layer both comprise polytetrafluoroethylene.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor technology, and in particular to a wafer bearing device and a preparation method thereof. BACKGROUND

[0002] In the preparation process of a 3DIC, a memory array and a peripheral circuit can be formed in two wafers respectively, and then the two wafers can be bonded through a wafer bonding process, and the bonded wafer can be divided into a plurality of dies through a wafer cutting process. In the wafer cutting process, the wafer to be cut needs to be attached to a blue film, so as to prevent the wafer from being displaced during the cutting process and facilitate the further separation of the plurality of dies obtained by cutting through the film expansion process. In order to stably bear and transport the wafer, the blue film needs to be fixed on a ring-shaped support frame. The wafer cutting process includes a laser cutting process. After the laser cutting is performed, the molten slag generated in the laser cutting process needs to be washed away through a wet process. The solution used in the wet process is generally an acidic solution or an alkaline solution, which is easy to cause corrosion of the ring-shaped support frame, resulting in a high scrap rate of the ring-shaped support frame. SUMMARY

[0003] Therefore, the present disclosure provides a wafer bearing device and a preparation method thereof.

[0004] To achieve the above object, the technical scheme of the present disclosure is as follows:

[0005] In a first aspect, the present disclosure provides a preparation method of a wafer bearing device, comprising the following steps:

[0006] Step S1: providing an iron support frame; the shape of the iron support frame is annular;

[0007] Step S2: forming a first material layer on the surface of the iron support frame; the surface of the iron support frame includes an inner side, an outer side, a top surface and a bottom surface;

[0008] Step S3: removing the first material layer on the bottom surface of the iron support frame to expose the bottom surface of the iron support frame;

[0009] Step S4: placing a covering mold on the bottom surface of the iron support frame; the shape of the covering mold is circular; the covering mold is concentrically placed with the iron support frame and is in contact with a first part of the bottom surface of the iron support frame; the shape of the first part is annular, the outer diameter of the first part is smaller than the outer diameter of the iron support frame, and larger than the inner diameter of the iron support frame;

[0010] Step S5: forming a second material layer on a second portion of the bottom surface of the ferrous support frame exposed relative to the masking mold by a spray coating process; the first material layer and the second material layer each comprise polytetrafluoroethylene.

[0011] In an alternative embodiment, the method further comprises the steps of:

[0012] Step S6: attaching a blue film to the bottom surface of the ferrous support frame, and a peripheral portion of a front surface of the blue film covers the first portion and is attached to the first portion; a diameter of the blue film is less than or equal to an outer diameter of the first portion; a remaining portion of the front surface of the blue film is exposed by a space enclosed by the inner side surface of the ferrous support frame and forms a wafer carrying surface; the wafer carrying device is used to carry a wafer placed on the wafer carrying surface to perform a cutting process and a wet process.

[0013] In an alternative embodiment, the method further comprises:

[0014] In the step S5 and the step S6, a ferric oxide layer is formed on the surface of the first portion;

[0015] In the step S6, the peripheral portion of the blue film is attached to the ferric oxide layer.

[0016] In an alternative embodiment, in the step S2, the step of forming a first material layer on the surface of the ferrous support frame comprises the steps of:

[0017] Step S10: cleaning and roughening the surface of the ferrous support frame;

[0018] Step S20: applying a coating material comprising polytetrafluoroethylene on the surface of the ferrous support frame;

[0019] Step S30: curing the coating material applied on the surface of the ferrous support frame by heat treatment to form the first material layer.

[0020] In an alternative embodiment, in the step S3, the step of removing the first material layer on the bottom surface of the ferrous support frame comprises:

[0021] Grinding the first material layer on the bottom surface of the ferrous support frame to remove the first material layer on the bottom surface.

[0022] In an alternative embodiment, the method further comprises:

[0023] Between the step S3 and the step S4, the ferrous support frame is placed on a mold base, and the first material layer formed on the top surface of the ferrous support frame is in contact with the mold base;

[0024] Between the step S4 and the step S5, a support mold is placed on the cover mold, and a support force is applied to the support mold towards the mold base, so that the cover mold is in close contact with the first portion.

[0025] In a second aspect, the embodiments of the present disclosure provide a wafer carrying device, comprising:

[0026] a ferrous support frame; the ferrous support frame is annular in shape;

[0027] a first material layer; the first material layer covers a top surface, an inner lateral surface and an outer lateral surface of the ferrous support frame; a bottom surface of the ferrous support frame comprises a first portion and a second portion; the first portion is connected with the inner lateral surface, and the second portion is connected with the outer lateral surface; the first portion is annular in shape;

[0028] a second material layer; the second material layer covers the second portion; the first material layer and the second material layer both comprise polytetrafluoroethylene.

[0029] In an optional embodiment, an outer diameter of the first portion is smaller than an outer diameter of the ferrous support frame and larger than an inner diameter of the ferrous support frame.

[0030] In an optional embodiment, the wafer carrying device further comprises:

[0031] a blue film; a peripheral portion of a front surface of the blue film covers the first portion and is attached to the first portion.

[0032] In an optional embodiment, a remaining portion of the front surface of the blue film is exposed by a space surrounded by the inner lateral surface of the ferrous support frame and constitutes a wafer carrying surface; the wafer carrying device is used for carrying a wafer placed on the wafer carrying surface to perform a cutting process and a wet process.

[0033] In an optional embodiment, a surface of the first portion comprises a ferric oxide layer, and the peripheral portion of the front surface of the blue film is attached to the ferric oxide layer.

[0034] In an optional embodiment, a diameter of the blue film is smaller than or equal to an outer diameter of the first portion.

[0035] In an optional embodiment, the diameter of the blue film is 370 millimeters; and the outer diameter of the first portion ranges from 370 millimeters to 372 millimeters.

[0036] In an alternative embodiment, the inner diameter of the first portion ranges from 345 mm to 355 mm; the outer diameter of the iron support frame covered with the first material layer ranges from 375 mm to 405 mm.

[0037] In the technical solution provided in the present disclosure, the surfaces of the iron support frame exposed in the wafer carrying device are all covered with a polytetrafluoroethylene material layer, and the part of the bottom surface of the iron support frame that needs to be attached with the blue film is not covered with a polytetrafluoroethylene material layer. On the one hand, the polytetrafluoroethylene material layer has the advantages of acid and alkali corrosion resistance, high temperature resistance, simple preparation process and low price, can reduce the degree of corrosion of the iron support frame in the wet process, and can also adapt to the temperature conditions of the laser cutting and other wafer cutting processes, thereby prolonging the service life of the wafer carrying device and reducing the cost of consumables in large-scale production; on the other hand, the adhesion of the blue film to the iron support frame is much higher than that of the blue film to the polytetrafluoroethylene material layer, and the polytetrafluoroethylene material layer is not formed on the part of the iron support frame that is attached with the blue film, which can make the blue film and the iron support frame tightly attached, that is, it can improve the corrosion resistance of the wafer carrying device and prolong the service life of the wafer carrying device while ensuring the reliability of the attachment between the blue film and the support frame. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 The flowchart of the preparation method of the wafer carrying device provided in the embodiment of the present disclosure is shown;

[0039] Figure 2a The top view schematic diagram of the iron support frame in the wafer carrying device provided in the embodiment of the present disclosure is shown; Figure 1 ;

[0040] Figure 2b The top view schematic diagram of the iron support frame in the wafer carrying device provided in the embodiment of the present disclosure is shown;

[0041] Figure 3 The three-dimensional schematic diagram of the iron support frame in the wafer carrying device provided in the embodiment of the present disclosure is shown;

[0042] Figure 4 The top view schematic diagram of the preparation process of the wafer carrying device provided in the embodiment of the present disclosure is shown; Figure 1 ;

[0043] Figure 5 The three-dimensional schematic diagram of the preparation process of the wafer carrying device provided in the embodiment of the present disclosure is shown; Figure 1 ;

[0044] Figure 6 The top view schematic diagram of the preparation process of the wafer carrying device provided in the embodiment of the present disclosure is shown;

[0045] Figure 7 FIG. 2 is a perspective view of a manufacturing process of a wafer carrier device according to an embodiment of the present disclosure;

[0046] Figure 8 FIG. 3 is a top view of a manufacturing process of a wafer carrier device according to an embodiment of the present disclosure; Figure 3 ;

[0047] Figure 9 FIG. 4 is a perspective view of a manufacturing process of a wafer carrier device according to an embodiment of the present disclosure; Figure 3 ;

[0048] Figure 10 FIG. 5 is a top view of a wafer carrier device according to an embodiment of the present disclosure; Figure 1 ;

[0049] Figure 11 FIG. 6 is a perspective view of a wafer carrier device according to an embodiment of the present disclosure; Figure 1 ;

[0050] Figure 12 FIG. 7 is a top view of a wafer carrier device according to an embodiment of the present disclosure;

[0051] Figure 13 FIG. 8 is a perspective view of a wafer carrier device according to an embodiment of the present disclosure;

[0052] Figure 14 FIG. 9 is a top view of a wafer carrier device according to an embodiment of the present disclosure; Figure 3 ;

[0053] Figure 15 FIG. 10 is a perspective view of a wafer carrier device according to an embodiment of the present disclosure; Figure 3 . DETAILED DESCRIPTION

[0054] Example embodiments of the present disclosure will be described herein below with reference to the accompanying drawings. While example embodiments of the present disclosure are shown in the drawings, it is understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0055] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure can be practiced without one or more of these specific details. In other instances, well-known features have not been described in detail in order to avoid obscuring aspects of the present disclosure.

[0056] In the drawings, like reference numerals refer to like elements throughout.

[0057] It should be understood that spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is inverted, then a dependent element or feature that is described as "below" or "beneath" or "under" another element or feature is now placed "above" and "on" or "over" the other element or feature. Thus, the example term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0058] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0059] In the preparation process of the 3DIC, the memory array and the peripheral circuit can be formed in two wafers respectively, then the two wafers are bonded through a wafer bonding process, and the bonded wafer is divided into a plurality of dies through a wafer cutting process. In the wafer cutting process, the wafer to be cut needs to be attached to a blue film, so as to prevent the wafer from being displaced in the cutting process and facilitate the further separation of the plurality of dies obtained through the film expansion process. In order to stably support and transport the wafer, the blue film needs to be fixed on a ring-shaped support frame. The wafer cutting process includes a laser cutting process. After the laser cutting is performed, the molten slag generated in the laser cutting process needs to be washed away through a wet process. The solution used in the wet process is generally an acidic solution or an alkaline solution, which is easy to cause corrosion of the ring-shaped support frame, thereby shortening the service life of the ring-shaped support frame.

[0060] To this end, the present disclosure proposes the following embodiments.

[0061] The present disclosure provides a preparation method of a wafer supporting device, Figure 1A flowchart of a preparation method of a wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 1. The preparation method of the wafer carrier device includes the following steps: Figure 1

[0062] Step S1: providing an iron support frame; the shape of the iron support frame is annular;

[0063] Step S2: forming a first material layer on the surface of the iron support frame; the surface of the iron support frame includes an inner side, an outer side, a top surface and a bottom surface;

[0064] Step S3: removing the first material layer on the bottom surface of the iron support frame to expose the bottom surface of the iron support frame;

[0065] Step S4: placing a masking mold on the bottom surface of the iron support frame; the shape of the masking mold is circular; the masking mold is placed concentrically with the iron support frame and is in contact with a first part of the bottom surface of the iron support frame; the shape of the first part is annular, the outer diameter of the first part is smaller than the outer diameter of the iron support frame and larger than the inner diameter of the iron support frame;

[0066] Step S5: forming a second material layer on the second part of the bottom surface of the iron support frame exposed relative to the masking mold by a spraying process; the first material layer and the second material layer both include polytetrafluoroethylene.

[0067] Figure 2a A top view schematic diagram of the iron support frame in the wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 2. Figure 1 ; Figure 2b A top view schematic diagram of the iron support frame in the wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 3. Figure 3 A perspective view schematic diagram of the iron support frame in the wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 4. Figures 4 to 9 A structure schematic diagram of a preparation process of a wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 5, wherein, Figure 4 , Figure 6 and Figure 8 are top view schematic diagrams, Figure 5 , Figure 7 and Figure 9 are perspective view schematic diagrams. Figures 10 to 15 A structure schematic diagram of a wafer carrier device provided by an embodiment of the present disclosure is shown in FIG. 6, wherein, Figure 10 , Figure 12 , Figure 14 are top view schematic diagrams, Figure 11 , Figure 13 , Figure 15 are perspective view schematic diagrams. In the following, Figures 1 to 15 ​The preparation method of the wafer carrying device provided by the embodiments of the present disclosure will be described in detail.

[0068] In combination with reference to Figure 2a , Figure 2b and Figure 3 , the preparation method of the wafer carrying device comprises the following steps: performing step S1: providing an iron support frame 100, the shape of the iron support frame 100 is annular.

[0069] Here, as shown in Figure 2a , the inner circle shape of the iron support frame 100 can be a regular circle, and the outer circle shape of the iron support frame 100 can not be a regular circle to adapt to the structure of the machine chamber and the conveying device. In the embodiments of the present disclosure, the iron support frame 100 shown in Figure 2a is approximated to the iron support frame 100 shown in Figure 2b , that is, the outer circle shape of the iron support frame 100 is approximated to a circle.

[0070] In combination with reference to Figures 2b to 5 , the preparation method of the wafer carrying device comprises the following steps: performing step S2: forming a first material layer 201 on the surface of the iron support frame 100; the surface of the iron support frame 100 comprises an inner side surface 101, an outer side surface 102, a top surface 103 and a bottom surface 104, wherein the top surface 103 and the bottom surface 104 of the iron support frame 100 are two opposite surfaces along the Z direction, and the shapes of the top surface 103 and the bottom surface 104 are both annular.

[0071] In some specific examples, in step S2, the first material layer 201 is formed on the surface of the iron support frame 100, comprising the following steps: step S10: cleaning and roughening the surface of the iron support frame 100; step S20: applying a coating material comprising polytetrafluoroethylene to the surface of the iron support frame 100; step S30: curing the coating material applied to the surface of the iron support frame 100 by heat treatment to form the first material layer 201.

[0072] Here, in step S10, cleaning and roughening the surface of the iron support frame 100 is beneficial to improve the adhesion of the first material layer 201 to the iron support frame 100, and the roughening method can include sandblasting, sanding or pickling, etc. In step S20, the coating material comprising polytetrafluoroethylene can be prepared by uniformly mixing polytetrafluoroethylene particles with an appropriate amount of solvent and other additives, and the iron support frame 100 can be immersed in the coating material comprising polytetrafluoroethylene, so that the coating material can be attached to the inner side surface 101, the outer side surface 102, the top surface 103 and the bottom surface 104 of the iron support frame 100. In step S30, after the coating material applied to the surface of the iron support frame 100 is cured, the formed first material layer 201 can cover the entire surface of the iron support frame 100.

[0073] In the embodiments of the present disclosure, the first material layer formed on the surface of the iron support frame comprises polytetrafluoroethylene, which has the characteristics of acid and alkali corrosion resistance, can reduce the degree of corrosion of the iron support frame in the wet process, thereby prolonging the service life of the iron support frame.

[0074] With reference to Figures 4 to 7 After the first material layer 201 is formed on the surface of the iron support frame 100, step S3 is performed: removing the first material layer 201 located on the bottom surface 104 of the iron support frame 100 to expose the bottom surface 104 of the iron support frame 100.

[0075] In some specific examples, in step S3, the first material layer 201 located on the bottom surface 104 of the iron support frame 100 is removed, comprising: performing a grinding process on the first material layer 201 located on the bottom surface 104 of the iron support frame 100 to remove the first material layer 201 located on the bottom surface 104. Here, the grinding process can be physical and mechanical grinding or chemical mechanical polishing (CMP), and after the grinding process, the inner side surface 101, the outer side surface 102 and the top surface 103 of the iron support frame 100 are still covered with the first material layer 201.

[0076] In the embodiments of the present disclosure, the first material layer comprising polytetrafluoroethylene is first formed on the entire surface of the iron support frame, and then the first material layer located on the bottom surface of the iron support frame is removed by a grinding process, instead of directly spraying on the parts other than the bottom surface, so that when the first material layer is formed, the iron support frame can be immersed in the coating comprising polytetrafluoroethylene, so that the first material layer formed on the top surface, inner side surface and outer side surface of the iron support frame is more complete and uniform.

[0077] With reference to Figures 6 to 9 After the first material layer 201 located on the bottom surface 104 of the iron support frame 100 is removed, step S4 is performed: placing a covering mold 301 on the bottom surface 104 of the iron support frame 100; the shape of the covering mold 301 is circular; the covering mold 301 is placed concentrically with the iron support frame 100 and in contact with the first part 1041 of the bottom surface 104 of the iron support frame 100; the shape of the first part 1041 is annular, the outer diameter D1 of the first part 1041 is smaller than the outer diameter of the iron support frame 100 and larger than the inner diameter of the iron support frame 100. Here, the diameter of the covering mold 301 can be equal to the outer diameter D1 of the first part 1041, and substantially equal to the diameter of the blue film.

[0078] In some embodiments, with reference to Figure 8 and Figure 9The method for manufacturing the wafer carrier device further comprises: between step S3 and step S4, placing the ferrous support frame 100 on the mold base 302, and the first material layer 201 formed on the top surface 103 of the ferrous support frame 100 is in contact with the mold base 302; between step S4 and step S5, placing the support mold 303 on the cover mold 301, and applying a supporting force to the support mold 303 towards the mold base 302, so that the cover mold 301 is in close contact with the first portion 1041.

[0079] With reference to Figures 8 to 11 , step S5 is performed: forming a second material layer 202 on the second portion 1042 of the bottom surface 104 of the ferrous support frame 100 exposed relative to the cover mold 301 by a spraying process; the first material layer 201 and the second material layer 202 each comprise polytetrafluoroethylene.

[0080] Here, with reference to Figure 9 , the direction of spraying is indicated by the arrow direction in the figure, and since the first portion 1041 of the bottom surface 104 is covered by the cover mold 301 during the process of forming the second material layer 202 on the second portion 1042 of the bottom surface 104, the first portion 1041 of the bottom surface 104 is still exposed after the second material layer 202 is formed, so that the surface of the ferrous support frame 100 is covered with a layer of polytetrafluoroethylene material (the first material layer 201 and the second material layer 202) except for the first portion 1041.

[0081] In some specific examples, with reference to Figure 10 , the outer diameter D1 of the first portion 1041 ranges from 370 mm to 372 mm, and the inner diameter D2 of the first portion 1041 ranges from 345 mm to 355 mm; the outer diameter D3 of the ferrous support frame covered with the first material layer 201 ranges from 375 mm to 405 mm.

[0082] In some embodiments, with reference to Figures 10 to 15 , the method for manufacturing the wafer carrier device further comprises the following step: step S6, attaching a blue film 400 to the bottom surface of the ferrous support frame 100, with reference to Figure 12 and Figure 13 , the peripheral portion of the front surface of the blue film 400 covers and is attached to the first portion 1041; the diameter of the blue film 400 is less than or equal to the outer diameter D1 of the first portion 1041; with reference to Figure 14 and Figure 15The remaining part of the front surface of the blue film 400 is exposed by the space surrounded by the inner side surface of the ferrous support frame 100 and constitutes a wafer bearing surface 401. Here, the inner side surface of the ferrous support frame 100 refers to the inner side surface 101 covered by the first material layer 201; the front surface of the blue film 400 refers to the side of the blue film 400 with adhesion, the peripheral part of which can be attached to the first part 1041, and the remaining part of which can serve as the wafer bearing surface 401 and can be attached to the wafer to be cut to fix the wafer to be cut on the wafer bearing device.

[0083] It should be noted that the embodiments of the present disclosure take the blue film as an example of the wafer attachment film attached to the ferrous support frame, and in other embodiments, the wafer attachment film attached to the first part 1041 can also be one of the UV film and the like.

[0084] In the embodiments of the present disclosure, the wafer bearing device prepared by the above preparation method can be used to bear the wafer placed on the wafer bearing surface for cutting process and wet process. In the wafer bearing device, the surface of the ferrous support frame exposed to the outside is covered with a polytetrafluoroethylene material layer, and the part (first part) of the ferrous support frame attached to the blue film is not covered with a polytetrafluoroethylene material layer. On the one hand, the polytetrafluoroethylene material layer has the advantages of acid and alkali corrosion resistance, simple preparation process and low price, and can reduce the degree of corrosion of the ferrous support frame in the wet process, thereby prolonging the service life of the wafer bearing device and reducing the cost of consumables in large-scale production; on the other hand, the adhesion of the blue film to the ferrous support frame is much higher than that of the blue film to the polytetrafluoroethylene material layer, and the polytetrafluoroethylene material layer is not formed on the part of the ferrous support frame attached to the blue film, which can make the blue film and the ferrous support frame tightly attached, that is, it can not only improve the corrosion resistance of the wafer bearing device and prolong the service life of the wafer bearing device, but also ensure the reliability of the attachment between the blue film and the support frame.

[0085] It can be understood that the polytetrafluoroethylene material layer not only has the characteristics of acid and alkali corrosion resistance, but also has the characteristics of high temperature resistance, and its melting point is much higher than the maximum temperature of the laser cutting process. Therefore, the polytetrafluoroethylene material layer not only can reduce the degree of corrosion of the ferrous support frame, but also can adapt to the temperature conditions of the cutting process, so that the wafer bearing device can adapt to the application scenarios of bearing the wafer for cutting process and wet process.

[0086] In some embodiments, the preparation method further comprises: forming a ferroferric oxide layer on the surface of the first part 1041 between step S5 and step S6; and in step S6, the peripheral part of the blue film 400 is attached to the ferroferric oxide layer.

[0087] In some specific examples, the ferriferous oxide layer on the surface of the first part 1041 can be formed by a normal-temperature blackening method, including treating the surface of the first part 1041 with a basic solution containing nitrite at a lower temperature to form a dense ferriferous oxide layer.

[0088] In some other specific examples, the ferriferous oxide layer on the surface of the first part 1041 can be formed by a rapid blueing process, including treating the surface of the first part with a blueing solution containing a promoter at room temperature to form a dense ferriferous oxide layer in a short time.

[0089] Both of the above two methods of forming the ferriferous oxide layer do not have a negative impact on the already formed polytetrafluoroethylene material layer, i.e., the ferriferous oxide layer can be formed on the surface of the first part 1041 without damaging the polytetrafluoroethylene material layer, the ferriferous oxide layer has better corrosion resistance than iron or ferric oxide, and has better adhesion to the blue film, thereby further improving the corrosion resistance of the wafer carrying device and prolonging the service life of the wafer carrying device without affecting the reliability of the adhesion of the blue film to the support frame.

[0090] In the embodiments of the present disclosure, the iron support frame in the wafer carrying device prepared by the above-mentioned preparation method of a wafer carrying device is covered with a polytetrafluoroethylene material layer on the surface not adhered to the blue film, and the part of the iron support frame adhered to the blue film is not covered with a polytetrafluoroethylene material layer, thereby improving the corrosion resistance of the iron support frame while ensuring the reliability of the adhesion between the blue film and the iron support frame, so that the wafer carrying device has high reliability and long service life.

[0091] Based on the similar concept as the above-mentioned preparation method of a wafer carrying device, the present disclosure further provides a wafer carrying device, Figure 2a a top view of the iron support frame in the wafer carrying device provided in the embodiments of the present disclosure is shown in Figure 1 ; a top view of the iron support frame in the wafer carrying device provided in the embodiments of the present disclosure is shown in Figure 2b a top view of the iron support frame in the wafer carrying device provided in the embodiments of the present disclosure is shown in Figure 3 a perspective view of the iron support frame in the wafer carrying device provided in the embodiments of the present disclosure is shown in

[0092] Figures 10 to 15 a structure schematic view of the wafer carrying device provided in the embodiments of the present disclosure is shown in Figure 10 , Figure 12 , Figure 14 a top view, Figure 11 , Figure 13 , Figure 15 a perspective view.

[0093] In some embodiments, the wafer carrying device provided in the embodiments of the present disclosure is used in combination with Figure 2a ,Figure 2b and Figure 3 The wafer carrying device includes: a ferrous support frame 100; the ferrous support frame 100 is annular in shape. Here, as shown in Figure 2a , the inner circle of the ferrous support frame 100 can be regular circular, while the outer circle of the ferrous support frame 100 can not be regular circular to adapt to the structure of the machine chamber and the conveying device. In the embodiments of the present disclosure, the ferrous support frame 100 shown in Figure 2a is approximated to the ferrous support frame 100 shown in Figure 2b , i.e., the outer circle of the ferrous support frame 100 is approximated to be circular.

[0094] In combination with reference to Figure 2b and Figure 3 , the ferrous support frame 100 includes an inner side surface 101, an outer side surface 102, a top surface 103, and a bottom surface 104. Here, the top surface 103 and the bottom surface 104 can be two opposite surfaces of the ferrous support frame 100 along the Z direction, and both are annular in shape. The bottom surface 104 further includes a first portion 1041 and a second portion 1042; the first portion 1041 is connected to the inner side surface 101, and the second portion 1042 is connected to the outer side surface 102; both the first portion 1041 and the second portion 1042 are annular in shape.

[0095] In some embodiments, with reference to Figure 6 , the outer diameter D1 of the first portion 1041 is smaller than the outer diameter of the ferrous support frame 100 and larger than the inner diameter of the ferrous support frame 100.

[0096] In some embodiments, in combination with reference to Figure 2b , Figure 3 , Figure 10 and Figure 11 , the wafer carrying device further includes: a first material layer 201 covering the top surface 103, the inner side surface 101, and the outer side surface 102 of the ferrous support frame 100; a second material layer 202 covering the second portion 1042 of the bottom surface 104 of the ferrous support frame 100; both the first material layer 201 and the second material layer 202 include polytetrafluoroethylene.

[0097] In some specific examples, with reference to Figure 10 , the inner diameter D2 of the first portion 1041 ranges from 345 mm to 355 mm; the outer diameter D3 of the ferrous support frame covered by the first material layer 201 ranges from 375 mm to 405 mm.

[0098] In some embodiments, in combination with reference to Figures 12 to 15 , the wafer carrying device further includes: a blue film 400; the peripheral part of the front surface of the blue film 400 covers and is attached to the first portion 1041.

[0099] In some embodiments, referring to Figure 10 and Figure 12 the diameter of the blue film 400 is less than or equal to the outer diameter D1 of the first portion 1041.

[0100] In some specific examples, the diameter of the blue film is 370 mm; the outer diameter D1 of the first portion 1041 ranges from 370 mm to 372 mm.

[0101] In a specific example, the diameter of the blue film 400 and the outer diameter D1 of the first portion 1041 are both 370 mm.

[0102] In another specific example, the diameter of the blue film 400 is 370 mm, and the outer diameter D1 of the first portion 1041 is 372 mm; the outer diameter of the first portion 1041 can be slightly larger than the diameter of the blue film 400 to ensure that, within the error range of the fitting process, the part of the blue film 400 that is fitted with the ferrous support frame is the first portion 1041 without a layer of polytetrafluoroethylene material.

[0103] In some embodiments, referring to Figure 14 and Figure 15 the remaining part of the front surface of the blue film 400 is exposed by the space surrounded by the inner side surface of the ferrous support frame and constitutes the wafer carrying surface 401; the wafer carrying device is used to carry the wafer placed on the wafer carrying surface 401 to perform the cutting process and the wet process. Here, the inner side surface of the ferrous support frame 100 refers to the inner side surface 101 covered with the first material layer 201; the front surface of the blue film 400 refers to the side of the blue film 400 with adhesion, the peripheral part of which can be fitted with the first portion 1041, and the remaining part of which can serve as the wafer carrying surface 401 and can be fitted with the wafer to be cut to fix the wafer to be cut on the wafer carrying device.

[0104] It should be noted that the embodiments of the present disclosure take the blue film as an example of the wafer attaching film attached to the ferrous support frame, and in other embodiments, the wafer attaching film attached to the first portion 1041 can also be one of the wafer attaching films such as UV film.

[0105] In the embodiments of the present disclosure, the wafer carrying device can be used to carry the wafer placed on the wafer carrying surface to carry out the cutting process and the wet process. In the wafer carrying device, the exposed surface of the iron support frame is covered with a layer of polytetrafluoroethylene material, and the part (first part) of the iron support frame adhered to the blue film is not covered with a layer of polytetrafluoroethylene material. On the one hand, the layer of polytetrafluoroethylene material has the advantages of acid and alkali corrosion resistance, high temperature resistance, simple preparation process and low price, can reduce the degree of corrosion of the iron support frame in the wet process, and can also adapt to the temperature conditions of the wafer cutting process such as laser cutting, thereby prolonging the service life of the wafer carrying device and reducing the cost of consumables in large-scale production; on the other hand, the adhesion of the blue film to the iron support frame is much higher than the adhesion of the blue film to the layer of polytetrafluoroethylene material, and the layer of polytetrafluoroethylene material is not formed on the part of the iron support frame adhered to the blue film, so that the blue film and the iron support frame can be closely adhered, that is, the adhesion reliability between the blue film and the support frame can be ensured while the corrosion resistance of the wafer carrying device is improved and the service life of the wafer carrying device is prolonged.

[0106] In some embodiments, the surface of the first part 1041 includes a layer of ferroferric oxide, and the peripheral part of the front surface of the blue film 400 is adhered to the layer of ferroferric oxide. The layer of ferroferric oxide has better corrosion resistance than iron or ferric oxide, and has good adhesion to the blue film, thereby further improving the corrosion resistance of the wafer carrying device and prolonging the service life of the wafer carrying device without affecting the adhesion reliability of the blue film and the support frame.

[0107] In the embodiments of the present disclosure, the surface of the iron support frame of the wafer carrying device not adhered to the blue film is covered with a layer of polytetrafluoroethylene material, and the part of the iron support frame adhered to the blue film is not covered with a layer of polytetrafluoroethylene material, thereby improving the corrosion resistance of the iron support frame while ensuring the adhesion reliability between the blue film and the iron support frame, so that the wafer carrying device has high reliability and long service life.

[0108] The methods disclosed in the several method embodiments provided by the present disclosure can be combined arbitrarily without conflict to obtain new method embodiments.

[0109] The features disclosed in the several device embodiments provided by the present disclosure can be combined arbitrarily without conflict to obtain new device embodiments.

[0110] The above merely illustrates the specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which shall be covered within the protection scope of the present disclosure.

Claims

1. A method for preparing a wafer carrier device, characterized in that: The following steps are involved: Step S1: providing an iron support frame; the iron support frame is annular in shape; Step S2: forming a first material layer on the surface of the iron support frame; the surface of the iron support frame includes an inner side surface, an outer side surface, a top surface and a bottom surface; Step S3: removing the first material layer located on the bottom surface of the iron support frame to expose the bottom surface of the iron support frame; Step S4: Placing a masking mold on the bottom surface of the iron support frame; the masking mold is circular in shape; the masking mold is placed concentrically with the iron support frame and contacts a first portion of the bottom surface of the iron support frame; the first portion is annular in shape, and the outer diameter of the first portion is smaller than the outer diameter of the iron support frame and larger than the inner diameter of the iron support frame; Step S5: forming a second material layer on the second portion of the bottom surface of the iron support frame exposed relative to the masking mold by a spraying process; the first material layer and the second material layer both include polytetrafluoroethylene.

2. The method for preparing a wafer carrier according to claim 1, wherein: The preparation method further comprises the following steps: Step S6: Attach the blue film to the bottom surface of the iron support frame, and the outer portion of the front side of the blue film covers the first part and fits with the first part; the diameter of the blue film is less than or equal to the outer diameter of the first part; the remaining portion of the front side of the blue film is exposed by the space surrounded by the inner side surface of the iron support frame and constitutes a wafer carrying surface; the wafer carrying device is used to carry the wafer placed on the wafer carrying surface for cutting process and wet process.

3. The method for preparing a wafer carrier according to claim 2, wherein: The preparation method further comprises: Between step S5 and step S6, forming a ferrosoferric oxide layer on the surface of the first portion; In step S6, the outer portion of the blue film is bonded to the ferrosoferric oxide layer.

4. The method for preparing a wafer carrier according to claim 1, wherein: In the step S2, forming a first material layer on the surface of the iron support frame includes the following steps: Step S10: cleaning and roughening the surface of the iron support frame; Step S20: coating a coating comprising polytetrafluoroethylene on the surface of the iron support frame; Step S30: curing the coating applied on the surface of the iron support frame through heat treatment to form the first material layer.

5. The method for preparing a wafer carrier according to claim 1, wherein: In the step S3, the removing of the first material layer located on the bottom surface of the iron support frame includes: The first material layer located on the bottom surface of the iron support frame is ground to remove the first material layer located on the bottom surface.

6. The method for preparing a wafer carrier according to claim 1, wherein: The preparation method further comprises: Between step S3 and step S4, the iron support frame is placed on a mold base, and the first material layer formed on the top surface of the iron support frame contacts the mold base; Between step S4 and step S5 , a supporting mold is placed on the masking mold, and a supporting force toward the mold base is applied to the supporting mold so that the masking mold is in close contact with the first portion.

7. A wafer carrying device, characterized in that: include: Iron support frame; The iron support frame is in the shape of a ring; a first material layer; The first material layer covers the top surface, inner side surface and outer side surface of the iron support frame; the bottom surface of the iron support frame includes a first portion and a second portion; the first portion is connected to the inner side surface, and the second portion is connected to the outer side surface; the first portion is annular in shape; a second material layer; The second material layer covers the second portion; and both the first material layer and the second material layer include polytetrafluoroethylene.

8. The wafer carrying device according to claim 7, characterized in that: The outer diameter of the first portion is smaller than the outer diameter of the iron support frame and larger than the inner diameter of the iron support frame.

9. The wafer carrying device according to claim 7, characterized in that: The wafer carrying device further includes: a blue film; the outer peripheral portion of the front side of the blue film covers the first portion and is bonded to the first portion.

10. The wafer carrying device according to claim 9, wherein: The remaining portion of the front surface of the blue film is exposed in the space enclosed by the inner side surface of the iron support frame and constitutes a wafer carrying surface; the wafer carrying device is used to carry the wafer placed on the wafer carrying surface for cutting process and wet process.

11. The wafer carrying device according to claim 9, wherein: The surface of the first portion includes a ferrosoferric oxide layer, and the outer peripheral portion of the front surface of the blue film is in contact with the ferrosoferric oxide layer.

12. The wafer carrying device according to claim 9, wherein: The diameter of the blue film is smaller than or equal to the outer diameter of the first part.

13. The wafer carrying device according to claim 9, wherein: The diameter of the blue film is 370 mm; the outer diameter of the first part ranges from 370 mm to 372 mm.

14. The wafer carrying device according to claim 7, wherein: The inner diameter of the first part ranges from 345 mm to 355 mm; the outer diameter of the iron support frame covered with the first material layer ranges from 375 mm to 405 mm.

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