Structure, preparation method and regulation method of regulating two-dimensional material polarized s-simon

Abstract

The application discloses a structure for regulating and controlling a two-dimensional material polarized SGM, a preparation method and a regulation and control method. The method of electron beam exposure and etching is used to prepare a silicon wafer substrate with silicon columns. The two-dimensional material CuInP2S6 is transferred to the silicon column substrate by a mechanical peeling and dry transfer method. The presence of the silicon column can provide a stable stress field, so that a stable polarized SGM can be generated. The two-dimensional material / silicon column structure has typical in-plane polarization and out-of-plane polarization characteristics of the polarized SGM, and the size of the polarized SGM can be regulated and controlled by changing the size of the silicon column.

Description

TECHNICAL FIELD

[0001] The application relates to the field of two-dimensional semiconductor materials, in particular to a structure for regulating a two-dimensional material polarized soliton, a preparation method and a regulation method. BACKGROUND

[0002] The polarized soliton is composed of a continuously rotating polarization structure, and is expected to be used for preparing a high-density and low-power information storage device, which is different from a magnetic soliton. The polarized soliton can be controlled through an electric field and other technical means, but only the polarization direction and the resistance state of the polarized soliton can be regulated, and the generation and size of the polarized soliton cannot be regulated. In addition, the intrinsic stress in the material is not enough to support the stability of the polarized soliton. Therefore, the electric field cannot stably regulate the generation and size of the polarized soliton, hindering the development of the next generation of advanced polarized soliton high-density storage chips. SUMMARY

[0003] The application aims at the deficiencies of the prior art, and provides a structure for regulating a two-dimensional material polarized soliton, a preparation method and a regulation method.

[0004] The application aims at the deficiencies of the prior art, and provides a structure for regulating a two-dimensional material polarized soliton, a preparation method and a regulation method.

[0005] A silicon wafer substrate is provided with silicon columns for providing a stable stress field, and a two-dimensional material capable of generating a polarized soliton is connected to the silicon columns of the silicon wafer substrate.

[0006] Further, the two-dimensional material capable of generating a polarized soliton is a two-dimensional layered CuInP2S6 with a thickness of 10-200 nm.

[0007] Further, the interval of the silicon columns is 100-800 nm, the diameter of the silicon columns is 100-600 nm, and the height of the silicon columns is 200-600 nm.

[0008] On the other hand, the specification also provides a preparation method of the structure, which comprises the following steps:

[0009] S1. A silicon wafer substrate with silicon columns on the surface is prepared by using an electron beam exposure + etching method:

[0010] First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water in sequence; then, photoresist is spin-coated onto the cleaned silicon wafer substrate by using a spin coater, and the silicon wafer substrate with the spin-coated photoresist is placed on a heating plate for drying; after the photoresist is completely dried, a silicon nanocolumn pattern is prepared by using an electron beam exposure system, and then the areas other than the silicon columns are etched by using an inductively coupled plasma reactive ion etching technology, so as to prepare a silicon nanocolumn array; after cleaning and removing the etching byproducts, the silicon nanocolumn array is dried by using dry nitrogen;

[0011] S2, preparing CuInP2S6 layered structure by mechanical exfoliation;

[0012] S3, transferring to the silicon wafer substrate with silicon column on the surface by dry transfer method.

[0013] Further, when the photoresist is spin-coated on the cleaned silicon wafer substrate by the spin coater, the rotation speed of the spin coater is 1500-4000 revolutions per minute, and the spin-coating time is 20-120 seconds.

[0014] Further, when the silicon nanocolumn pattern is prepared by the electron beam exposure system, the electron beam exposure system is selected with a current of 100 pA-5 nA, an exposure time of 0.2-8 microseconds, and a development time of 10-40 seconds.

[0015] Further, the etching of the area other than the silicon column by the inductively coupled plasma reactive ion etching technology specifically includes: using SF6 / CF4 as the etchant, and the etching time is 5-20 minutes.

[0016] On the other hand, the specification also provides a method for regulating the polarized Sgminson using the structure, which comprises: detecting the size of the polarized Sgminson generated by the two-dimensional layered material using a piezoelectric force microscope, controlling the stress regulation range of the two-dimensional layered material by changing the size of the silicon column of the silicon wafer substrate, and thereby regulating the size of the generated polarized Sgminson.

[0017] Advantages of the present application:

[0018] The present application generates stable polarized Sgminson by transferring the two-dimensional material to the silicon column substrate and using the silicon column to provide a stable stress field. The two-dimensional material / silicon column structure proposed by the present application has typical in-plane polarization and out-of-plane polarization characteristics of polarized Sgminson, and by changing the size of the silicon column, the size of the polarized Sgminson can be regulated, which is beneficial to realize high-density storage based on Sgminson. The present application regulates the polarized Sgminson in the two-dimensional material by providing a stress field through the silicon column, which is compatible with the current silicon-based semiconductor process. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 The two-dimensional material / silicon column structure provided for the embodiments of the present application is shown in the figure;

[0020] Figure 2 The SEM image of the silicon wafer substrate with silicon column on the surface provided for the embodiments of the present application is shown in the figure;

[0021] Figure 3 The PFM image of CuInP2S6 transferred to the silicon wafer substrate with silicon column on the surface under the condition that the size of the silicon column is 100 nm is shown in the figure;

[0022] Figure 4 PFM image of CuInP2S6 transferred to the silicon wafer substrate with silicon pillars on the surface at a spin speed of 1500 rpm when the size of the silicon pillars is 300 nm for the embodiment of the present application;

[0023] Figure 5 PFM image of CuInP2S6 transferred to the silicon wafer substrate with silicon pillars on the surface at a spin speed of 4000 rpm when the size of the silicon pillars is 100 nm for the embodiment of the present application;

[0024] Figure 6 PFM image of CuInP2S6 transferred to the silicon wafer substrate with silicon pillars on the surface at a spin speed of 4000 rpm when the size of the silicon pillars is 100 nm for the embodiment of the present application;

[0025] Figure 7 PFM image of CuInP2S6 transferred to the silicon wafer substrate with silicon pillars on the surface when the size of the silicon pillars is 300 nm and the thickness of CuInP2S6 is 200 nm for the embodiment of the present application. DETAILED DESCRIPTION

[0026] The specific embodiment of the present application is further described in detail below in combination with the accompanying drawings.

[0027] As shown in the drawings, Figure 1 A structure for regulating polarized skyrmions of two-dimensional material, comprising:

[0028] A silicon wafer substrate with silicon pillars 1 providing a stable stress field on the surface, and a two-dimensional layered CuInP2S6 material 2 capable of generating polarized skyrmions connected on the silicon pillars of the silicon wafer substrate. The interval of the silicon pillars is 100-800 nm, the diameter of the silicon pillars is 100-600 nm, and the height of the silicon pillars is 200-600 nm.

[0029] The present application provides a preparation method of a structure for regulating polarized skyrmions of two-dimensional material;

[0030] 1. A silicon substrate with silicon nanopillars on its surface is prepared using a typical electron beam lithography (EBPG) etching method. First, the silicon substrate is cleaned sequentially with acetone, isopropanol, and deionized water. Then, photoresist (PMMA 950k) is spin-coated onto the clean silicon substrate at a spin coater at 1500-4000 rpm for 20-120 seconds. Next, the photoresist-coated silicon substrate is heated on a hot plate at 80-200 degrees Celsius for 2-8 minutes. After the photoresist is completely dry, silicon nanopillar patterns are fabricated using an electron beam lithography system (EBPG 5150) at a current of 100 pA-5 nA, an exposure time of 0.2-8 microseconds, and a development time of 10-40 seconds. Subsequently, silicon nanopillar arrays were fabricated by etching the areas outside the silicon pillars using inductively coupled plasma reactive ion etching (ASB-EPI-C6) with SF6 / CF4 as the etchant and an etching time of 5-20 minutes. The etching byproducts (SiF4 polymer) were then removed by ultrasonic cleaning with acetone and isopropanol, and finally dried with dry nitrogen gas. Scanning electron microscope (SEM) images of the prepared silicon substrate with silicon pillars on its surface are shown below. Figure 2 As shown, the scale bar in the figure is 200 nm.

[0031] 2. CuInP2S6 / silicon pillar structures were prepared using a combination of mechanical exfoliation and dry transfer. CuInP2S6, a two-dimensional layered material, exhibits strong covalent bonds within its layers and weak van der Waals bonds between them. Therefore, 10-200 nm CuInP2S6 layers can be readily obtained through mechanical exfoliation and then transferred to a silicon substrate with silicon pillars on its surface using a dry transfer method.

[0032] like Figure 1 As shown, the structure prepared above is used to regulate polarized skyrmions. The size of polarized skyrmions generated by the two-dimensional layered material is detected by piezoelectric microscopy 3. The stress regulation range of the two-dimensional layered material is controlled by changing the size of the silicon pillars on the silicon substrate, thereby regulating the size of the generated polarized skyrmions.

[0033] The mechanism by which silicon pillars modulate the polarization of skyrmions lies in the fact that CuInP2S6 experiences the greatest stress at the edge of the silicon pillar, and outside the pillar, CuInP2S6 is not subject to stress modulation. Therefore, the silicon pillar can modulate the size of the skyrmions. When the silicon pillar size is 100 nm, the skyrmion size is 110 nm; when the silicon pillar size is 300 nm, the skyrmion size is 330 nm.

[0034] For the purposes of the present invention, the present invention will now be described in more detail below. It should be understood, however, that the present invention can be practiced in many different forms and should not be considered limited to the embodiments or examples described herein. Rather, these embodiments or examples are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this present invention belongs. The terminology used in the description of the present invention herein is for describing particular embodiments or examples only and is not intended to be limiting of the present invention. As used herein, the term "and / or", alone or in combination with other terms, means one or all of the associated listed items and includes any and all combinations of one or more of the associated listed items.

[0036] In an embodiment, a silicon wafer substrate with silicon pillars on the surface is prepared by a typical e-beam exposure + etching method. First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol, and deionized water in sequence. Then, a photoresist (PMMA950k) is spin-coated onto the cleaned silicon wafer substrate using a spin coater at a speed of 1500 rpm for 20 seconds. Then, the silicon wafer substrate with the photoresist spin-coated is placed on a hot plate for heating at a temperature of 80 degrees Celsius for 2 minutes. After the photoresist is completely dried, a silicon nanopillar pattern is prepared by an e-beam exposure system (EBPG 5150) at a current of 100 pA for an exposure time of 0.2 microseconds and a developing time of 10 seconds. Subsequently, the areas other than the silicon pillars are etched by an inductively coupled plasma reactive ion etching (ASB-EPI-C6) technique using SF6 / CF4 as the etchant for 5 minutes, thereby preparing a silicon nanopillar array. Subsequently, the etching by-products (SiF4 polymers) are removed by ultrasonic cleaning with acetone and isopropyl alcohol, and finally dried with dry nitrogen. A scanning electron microscope image (SEM) of the prepared silicon wafer substrate with silicon pillars on the surface is shown in FIG. 1, where the scale bar is 200 nm. Figure 2 The CuInP2S6 / silicon pillar structure is prepared by a mechanical exfoliation + dry transfer method. CuInP2S6 is a two-dimensional layered material, with strong covalent bonds within the layers and weak van der Waals bonds between the layers. Therefore, 10 nm CuInP2S6 can be conveniently obtained by mechanical exfoliation, and then transferred to the silicon wafer substrate with silicon pillars on the surface by a dry transfer method.

[0037] As shown in FIG. 2, the CuInP2S6 / silicon pillar structure is transferred to the silicon wafer substrate with silicon pillars on the surface by a dry transfer method. The CuInP2S6 / silicon pillar structure is placed on the silicon wafer substrate with silicon pillars on the surface, and then the CuInP2S6 / silicon pillar structure is transferred to the silicon wafer substrate with silicon pillars on the surface by a dry transfer method. The CuInP2S6 / silicon pillar structure is transferred to the silicon wafer substrate with silicon pillars on the surface by a dry transfer method. The CuInP2S6 / silicon pillar structure is placed on the silicon wafer substrate with silicon pillars on the surface, and then the CuInP2S6 / silicon pillar structure is transferred to the silicon wafer substrate with silicon pillars on the surface by a dry transfer method. Figure 3PFM (Piezo Force Microscopy) is a kind of microscope developed on the basis of AFM (Atomic Force Microscopy) and can be used to detect the electric-induced deformation of the sample under the applied excitation voltage by using the conductive probe of AFM. By using PFM, the static ferroelectric domain structure, ferroelectric domain inversion behavior and micro-area electric hysteresis loop of the ferroelectric material can be obtained.

[0038] Specifically, Figure 3 The corresponding silicon pillar size is 100 nm. L-A: in-plane amplitude, L-P: in-plane phase, V-A: out-of-plane amplitude, V-P: out-of-plane phase. The results in the figure show that, due to the stable ring-shaped stress field provided by the silicon pillar, the in-plane phase image (L-P) appears half bright and half dark, and the in-plane amplitude image (L-A) shows a coffee bean shape with two brighter halves and a dark middle line, which are the characteristics of the typical polar skyrmion topological domain. It is illustrated that the method of the present application can provide a stable stress field, so that the polar skyrmion can exist stably.

[0039] In another embodiment, a silicon wafer substrate with silicon pillars on the surface is prepared by using a typical electron beam exposure + etching method. First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water in sequence. Then, the photoresist (PMMA950k) is spin-coated onto the cleaned silicon wafer substrate by using a spin coater, at a speed of 1500 rpm and for 20 seconds. Then, the silicon wafer substrate with the spin-coated photoresist is placed on a heating plate for heating, at a temperature of 80 degrees Celsius and for 2 minutes. After the photoresist is completely dried, the silicon nanorod pattern is prepared by using an electron beam exposure system (EBPG 5150), at a current of 100 pA, an exposure time of 0.2 microseconds and a developing time of 10 seconds. Subsequently, the areas other than the silicon pillars are etched by using an inductively coupled plasma reactive ion etching (ASB-EPI-C6) technology, with SF6 / CF4 as the etchant and for 5 minutes, so as to prepare the silicon nanorod array. Subsequently, the etching by-products (SiF4 polymers) are removed by using acetone and isopropyl alcohol for ultrasonic cleaning, and finally dried by using dry nitrogen. The CuInP2S6 / silicon pillar structure is prepared by using the mechanical exfoliation + dry transfer method. As a two-dimensional layered material, CuInP2S6 is combined by strong covalent bonds within the layer and weak van der Waals bonds between the layers. Therefore, 10 nm CuInP2S6 can be conveniently obtained by the mechanical exfoliation method, and then transferred to the silicon wafer substrate with silicon pillars on the surface by using the dry transfer method.

[0040] As Figure 4PFM (Piezo Force Microscopy) is a kind of microscope developed on the basis of AFM (Atomic Force Microscope) which uses the AFM conductive probe to detect the electric-induced deformation of the sample under the applied excitation voltage. By using PFM, the static ferroelectric domain structure, ferroelectric domain switching behavior and micro-area hysteresis loop of the ferroelectric material can be obtained.

[0041] Specifically, Figure 4 The corresponding silicon pillar size is 300 nm. L-A: in-plane amplitude, L-P: in-plane phase, V-A: out-of-plane amplitude, V-P: out-of-plane phase. The results in the figure show that due to the stable ring-shaped stress field provided by the silicon pillar, the in-plane phase image (L-P) appears half bright and half dark, and the in-plane amplitude image (L-A) shows a coffee bean shape with two brighter halves and a dark middle line, which are the typical characteristics of the polarization skyrmion topological domain. It shows that the method of the application can provide a stable stress field to make the polarization skyrmion exist stably, and by changing the size of the silicon pillar, the size of the skyrmion can be effectively controlled.

[0042] In another embodiment, a silicon wafer substrate with silicon pillars on the surface is prepared by a typical electron beam exposure + etching method. First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water in sequence. Then, the photoresist (PMMA950k) is spin-coated onto the cleaned silicon wafer substrate by using a spin coater at a speed of 4000 rpm for 20 seconds. Then, the silicon wafer substrate with photoresist spin-coated is placed on a heating plate for heating, the temperature is 80 degrees Celsius, and the heating time is 2 minutes. After the photoresist is completely dried, the silicon nanorod pattern is prepared by an electron beam exposure system (EBPG 5150), the current is 100 pA, the exposure time is 0.2 microseconds, and the development time is 10 seconds. Subsequently, the areas other than the silicon pillars are etched by inductively coupled plasma reactive ion etching (ASB-EPI-C6) technology, the etchant is SF6 / CF4, and the etching time is 5 minutes, thereby preparing a silicon nanorod array. Subsequently, the etching by-products (SiF4 polymers) are removed by ultrasonic cleaning with acetone and isopropyl alcohol, and finally dried with dry nitrogen. The CuInP2S6 / silicon pillar structure is prepared by using the method of mechanical exfoliation + dry transfer. CuInP2S6 is a two-dimensional layered material, the layers are combined by strong covalent bonds, and the layers are combined by very weak van der Waals bonds. Therefore, 10 nm CuInP2S6 can be easily obtained by mechanical exfoliation, and then transferred to the silicon wafer substrate with silicon pillars on the surface by dry transfer method.

[0043] As Figure 5PFM (Piezo Force Microscopy) is a kind of microscope developed on the basis of AFM (Atomic Force Microscope) which uses the AFM conductive probe to detect the electric-induced deformation of the sample under the applied excitation voltage. By using PFM, the static ferroelectric domain structure, ferroelectric domain switching behavior and micro-area hysteresis loop of the ferroelectric material can be obtained.

[0044] Specifically, Figure 5 The corresponding silicon pillar size in the present application is 100 nm. L-A: in-plane amplitude, L-P: in-plane phase, V-A: out-of-plane amplitude, V-P: out-of-plane phase. The results in the figure show that due to the stable ring-shaped stress field provided by the silicon pillar, the in-plane phase image (L-P) appears half bright and half dark, and the in-plane amplitude image (L-A) shows a coffee bean shape with two brighter halves and a dark middle line, which are the typical characteristics of the polar skyrmion topological domain. It is illustrated that the rotation speed mentioned in the method of the present application can be 4000 rpm. Under this rotation speed, a stable stress field can still be provided to enable the polar skyrmion to exist stably.

[0045] In another embodiment, a silicon wafer substrate with silicon pillars on the surface is prepared by using a typical electron beam exposure + etching method. First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water in sequence. Then, the photoresist (PMMA950k) is spin-coated onto the cleaned silicon wafer substrate by using a spin coater, at a rotation speed of 4000 rpm and a spin-coating time of 120 seconds. Then, the silicon wafer substrate with the spin-coated photoresist is placed on a hot plate for heating, at a temperature of 200 degrees Celsius and a heating time of 8 minutes. After the photoresist is completely dried, the silicon nanorod pattern is prepared by an electron beam exposure system (EBPG 5150), at a current of 5 nA, an exposure time of 8 microseconds and a development time of 40 seconds. Subsequently, the areas other than the silicon pillars are etched by using an inductively coupled plasma reactive ion etching (ASB-EPI-C6) technology, with SF6 / CF4 as the etchant and an etching time of 20 minutes, so as to prepare the silicon nanorod array. Subsequently, the etching by-products (SiF4 polymers) are removed by using acetone and isopropyl alcohol ultrasonic cleaning, and finally dried by using dry nitrogen. The CuInP2S6 / silicon pillar structure is prepared by using the mechanical peeling + dry transfer method. As a two-dimensional layered material, CuInP2S6 is combined by strong covalent bonds within the layer and weak van der Waals bonds between the layers. Therefore, 10 nm CuInP2S6 can be conveniently obtained by the mechanical peeling method, and then transferred to the silicon wafer substrate with silicon pillars on the surface by the dry transfer method.

[0046] As Figure 6PFM (Piezo Force Microscopy) is a kind of microscope developed on the basis of AFM (Atomic Force Microscope) which uses the AFM conductive probe to detect the electric-induced deformation of the sample under the applied excitation voltage. Using PFM, the static ferroelectric domain structure, ferroelectric domain switching behavior and micro-area hysteresis loop of ferroelectric materials can be obtained.

[0047] Specifically, Figure 6 The corresponding silicon pillar size is 100 nm. L-A: in-plane amplitude, L-P: in-plane phase, V-A: out-of-plane amplitude, V-P: out-of-plane phase. The results in the figure show that due to the stable ring-shaped stress field provided by the silicon pillar, the in-plane phase image (L-P) appears half bright and half dark, and the in-plane amplitude image (L-A) shows a coffee bean shape with two brighter halves and a dark middle line, which are the typical characteristics of polar skyrmion topological domains. It is illustrated that under the experimental conditions of the above electron beam exposure + etching method for preparing the silicon wafer substrate with silicon pillars on the surface, a stable stress field can still be provided to enable the stable existence of polar skyrmions.

[0048] In another embodiment, a silicon wafer substrate with silicon pillars on the surface is prepared by a typical electron beam exposure + etching method. First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water in sequence. Then, the photoresist (PMMA950k) is spin-coated onto the cleaned silicon wafer substrate using a spin coater at a speed of 4000 rpm for 120 seconds. Then, the silicon wafer substrate with the spin-coated photoresist is placed on a hot plate for heating, the temperature is 200 degrees Celsius, and the heating time is 8 minutes. After the photoresist is completely dried, the silicon nanorod pattern is prepared by an electron beam exposure system (EBPG 5150), the current is 5 nA, the exposure time is 8 microseconds, and the development time is 40 seconds. Subsequently, the areas other than the silicon pillars are etched by an inductively coupled plasma reactive ion etching (ASB-EPI-C6) technology, the etchant is SF6 / CF4, and the etching time is 20 minutes, thereby preparing a silicon nanorod array. Subsequently, the etching by-products (SiF4 polymers) are removed by ultrasonic cleaning with acetone and isopropyl alcohol, and finally dried with dry nitrogen. The CuInP2S6 / silicon pillar structure is prepared by a mechanical exfoliation + dry transfer method. As a two-dimensional layered material, CuInP2S6 is combined by strong covalent bonds within the layer and weak van der Waals bonds between the layers. Therefore, 200 nm CuInP2S6 can be easily obtained by mechanical exfoliation, and then transferred to the silicon wafer substrate with silicon pillars on the surface by dry transfer method.

[0049] As Figure 7PFM images of CuInP2S6 transferred onto a silicon substrate with silicon pillars on the surface are shown, and the scale bar is 100 nm. PFM (Piezo Force Microscopy) is a microscope developed on the basis of AFM (Atomic Force Microscopy) and uses an AFM conductive probe to detect the electric-induced deformation of a sample under an applied excitation voltage. Using PFM, the static ferroelectric domain structure, ferroelectric domain switching behavior and micro-area hysteresis loop of a ferroelectric material can be obtained.

[0050] Specifically, Figure 7 The corresponding silicon pillar size is 100 nm. L-A: in-plane amplitude, L-P: in-plane phase, V-A: out-of-plane amplitude, and V-P: out-of-plane phase. The results shown in the figure show that, due to the stable ring-shaped stress field provided by the silicon pillar, the in-plane phase image (L-P) appears half bright and half dark, and the in-plane amplitude image (L-A) shows a coffee bean shape with two brighter halves and a dark middle line, which are typical characteristics of a polar skyrmion topological domain. This indicates that when the thickness of CuInP2S6 is 200 nm, a stable stress field can still be provided, allowing the polar skyrmion to exist stably.

[0051] The present application provides a new method for regulating a two-dimensional material polar skyrmion. By transferring the two-dimensional material to a silicon pillar substrate, the presence of the silicon pillar can provide a stable stress field, thus generating a stable polar skyrmion. In addition, by changing the size of the silicon pillar, the size of the polar skyrmion can be regulated. The two-dimensional material / silicon pillar structure provided by the present application has typical in-plane polarization and out-of-plane polarization characteristics of a polar skyrmion, and by changing the size of the silicon pillar, the size of the polar skyrmion can be regulated. Piezo Force Microscopy images (PFM) are shown in Figure 3 、 Figure 4 The present application provides a method for regulating the generation and size of a polar skyrmion.

[0052] The above examples are used to explain and illustrate the present application, but are not intended to limit the present application. Any modifications and changes made to the present application within the spirit and protection scope of the claims fall within the protection scope of the present application.

Claims

1. A structure for regulating a polarized soliton in a two-dimensional material, characterized in that, The application relates to a silicon wafer substrate with silicon columns on the surface of the substrate, and a two-dimensional material capable of generating polarized Majorana fermions connected to the silicon columns. The two-dimensional material capable of generating polarized Majorana fermions is a two-dimensional layer-shaped CuInP2S6 with a thickness of 10-200 nm.

2. The structure of claim 1, wherein The interval of the silicon columns is 100-800 nm, the diameter of the silicon columns is 100-600 nm, and the height of the silicon columns is 200-600 nm.

3. The structure of claim 1, wherein The application relates to a method for preparing a silicon wafer substrate with silicon columns on the surface of the substrate by using electron beam exposure and etching.

4. A method for producing a structure as claimed in any one of claims 1-3, characterized in that First, the silicon wafer substrate is cleaned with acetone, isopropyl alcohol and deionized water; then, photoresist is spin-coated on the cleaned silicon wafer substrate by using a spin coater; after that, the silicon wafer substrate with the spin-coated photoresist is placed on a heating plate to dry; after the photoresist is completely dried, a silicon nanocolumn pattern is prepared by using an electron beam exposure system; then, the area other than the silicon columns is etched by using an inductively coupled plasma reactive ion etching technology, so that a silicon nanocolumn array is prepared; after cleaning and removing the etching byproducts, the silicon wafer substrate is dried by using dry nitrogen; The application relates to a method for preparing a layer-shaped CuInP2S6 by using mechanical peeling. The application relates to a method for transferring the layer-shaped CuInP2S6 to the silicon wafer substrate with the silicon columns on the surface of the substrate by using dry transfer. When the photoresist is spin-coated on the cleaned silicon wafer substrate by using the spin coater, the rotation speed of the spin coater is 1500-4000 revolutions per minute, and the spin-coating time is 20-120 seconds. When the silicon nanocolumn pattern is prepared by using the electron beam exposure system, the current of the electron beam exposure system is 100 pA-5 nA, the exposure time is 0.2-8 microseconds, and the developing time is 10-40 seconds.

5. The production method according to claim 4, characterized by, When the area other than the silicon columns is etched by using the inductively coupled plasma reactive ion etching technology, SF6 / CF4 is used as the etchant, and the etching time is 5-20 minutes.

6. The preparation method according to claim 4, characterized in that, The application relates to a method for detecting the size of the polarized Majorana fermions generated by the two-dimensional layer-shaped material by using a piezoelectric force microscope, and controlling the stress regulation range of the two-dimensional layer-shaped material by changing the size of the silicon columns of the silicon wafer substrate, so that the size of the generated polarized Majorana fermions is regulated.

7. The preparation method according to claim 4, characterized in that, ​ 8. A method for controlling the polarization of a soliton using the structure of any one of claims 1-3. ​ ​

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