Sputtering coating device
By setting up multiple gas outlets and a gas extraction device in the sputtering coating apparatus, the problem of thin film non-uniformity caused by the non-uniformity of process gas movement is solved, achieving uniform deposition of thin films on the substrate and stability of the film deposition rate, thereby improving coating quality and efficiency.
Patent Information
- Application Number
- CN202511349489.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-22
- Publication Date
- 2025-10-28
- Estimated Expiration
- 2045-09-22
AI Technical Summary
In existing sputtering coating equipment, the movement trend of process gas affects the uniformity of film deposition, film formation rate and film quality, especially affected by the vacuum system pumping and gas injection method, resulting in uneven film on the substrate and unstable film formation rate.
A sputtering deposition apparatus is designed. By setting multiple gas outlets and a gas extraction device at the sputtering cathode, the uniform distribution of inert gas and the uniformity of gas extraction are ensured. A multi-layer gas path design and a guide plate structure are adopted to ensure that the gas bombards the target surface uniformly and the thin film is deposited uniformly on the substrate.
This achieves uniformity of the thin film on the substrate and stability of the film formation rate, improves film quality and coating efficiency, and ensures the uniformity of the thin film on the substrate and the consistency of the film formation rate.
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Figure CN120844028A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of sputtering coating technology, and in particular to a sputtering coating apparatus. Background Technology
[0002] Sputtering deposition is achieved using a sputtering apparatus. It involves bombarding a target surface with energetic particles in a vacuum, causing the ejected particles to deposit onto a substrate. Typically, a low-pressure inert gas glow discharge is used to generate incident ions. The cathode target is made of the deposition material, and the substrate serves as the anode. Argon or other inert gases at 0.1-10 Pa are introduced into the vacuum chamber. A glow discharge is generated under the influence of a 1-3 kV DC negative voltage or a 13.56 MHz radio frequency voltage at the cathode (target). The ionized argon ions bombard the target surface, causing target atoms to sputter and deposit onto the substrate, forming a thin film.
[0003] In sputtering apparatuses (such as magnetron sputtering and ion beam sputtering), the movement trend of the internal process gas directly affects the uniformity of thin film deposition, the film deposition rate, and the film quality. This process gas movement trend is primarily influenced by the vacuum system's pumping and the gas injection method. To ensure the quality of the thin film on the substrate, a sputtering deposition apparatus is proposed. Summary of the Invention
[0004] This invention provides a sputtering coating apparatus that can further ensure the uniformity of thin film deposition on the substrate, the film formation rate, and the film quality by controlling the uniformity of inert gas intake at the sputtering cathode and the uniformity of vacuum extraction during the coating process.
[0005] A sputtering coating apparatus includes a mounting box having a sputtering cavity and a vacuum cavity for moving a substrate along a first direction. The sputtering cavity and the vacuum cavity are distributed along a second direction and are connected to each other. The first direction is perpendicular to the second direction and is in the same plane. A sputtering cathode is provided in the sputtering cavity, a target material is provided on the sputtering cathode, an air inlet plate is provided on the sputtering cathode, the air inlet plate has an air inlet pipe, and multiple air outlets of the air inlet pipe are evenly arranged facing the target material. The vacuum chamber has an air extraction hole, and an air extraction device is installed at the air extraction hole. It is used in conjunction with the air inlet plate during the coating process to keep the vacuum chamber at the working pressure. The aforementioned air intake pipeline includes multiple layers of air passages arranged along the air passage direction. Each layer of the aforementioned air passage includes at least one sub-air passage. The number of air inlets of the aforementioned sub-air passage is set to one, and the number of air outlets is set to n times the number of air inlets. In two adjacent layers of air passages, the number of air outlets of the upper layer of the aforementioned air passage is equal to the number of the aforementioned sub-air passages in the lower layer of the aforementioned air passage, and they are connected to the air inlets of the lower layer of the aforementioned sub-air passages. The length of the air passage between each of the n air outlets and its air inlet in each of the above sub-air passages is the same, and each of the above sub-air passages in each layer of the above air passages is set independently.
[0006] Preferably, the number of air outlets of the above-mentioned sub-gas path is set to twice the number of its air inlets.
[0007] Preferably, the air intake plate includes an air passage plate, a graphite plate, and an air passage sealing plate; The aforementioned air circuit board is provided with an installation groove, the aforementioned air intake pipe is located at the bottom of the aforementioned installation groove, the aforementioned air circuit sealing plate is installed in the aforementioned installation groove, and the aforementioned graphite plate is located at the bottom of the aforementioned installation groove and between the graphite plate and the air circuit sealing plate, so as to seal the aforementioned air intake pipe.
[0008] Preferably, the aforementioned air extraction holes and the aforementioned sputtering cavity are distributed along the first direction and located on the same side relative to the substrate; A guide plate is provided at the aforementioned air extraction port, and the guide plate is provided with guide holes. The guide holes are positioned directly opposite the air extraction port along the second direction. The guide plate is parallel to the side wall of the vacuum chamber where the air extraction port is located and is spaced apart along the second direction, forming an air extraction chamber.
[0009] Preferably, the above-mentioned guide hole has a first guide sidewall and a second guide sidewall opposite to each other along the first direction, the second guide sidewall is located outside the above-mentioned air extraction hole along the first direction, and the first guide sidewall is closer to the above-mentioned sputtering cavity than the second guide sidewall along the first direction. The aforementioned first guide sidewall has an inwardly convex portion formed along the first direction; The horizontal plane that is located on the axis of the air extraction hole and is parallel to the third direction is set as the first plane. The closer the inner convex sidewall is to the axis of the air extraction hole along the third direction, the shorter the vertical distance between it and the first plane.
[0010] Preferably, the two ends of the aforementioned inner convex portion along the third-direction inner sidewall are located at the two ends of the aforementioned first flow guide sidewall.
[0011] Preferably, the plane containing the axis of the air extraction hole and perpendicular to a third direction is designated as the second plane, and the inner convex portion is symmetrically arranged about the second plane.
[0012] Preferably, the projection of the inner protrusion on the side wall of the vacuum chamber along the second direction covers a portion of the air extraction hole.
[0013] Preferably, the second guide sidewall and the first guide sidewall are symmetrically arranged about the first plane.
[0014] Preferably, multiple air extraction holes are provided, and multiple air extraction devices are provided accordingly; Multiple air extraction holes are evenly distributed along a third direction, and multiple flow guide holes are distributed along a third direction. Adjacent flow guide holes are connected by a communication port, and the sidewall of the communication port along the third direction is recessed outward along the first direction.
[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. Set up multiple gas outlets, so that the gas outlets are distributed along the length or width of the target material, so that the inert gas surface formed is set to correspond to the target material, so that the ionized inert ions can bombard every part of the target material, thereby allowing the sputtered target atoms to adhere to every area of the substrate, ensuring the film formation area and speed.
[0016] 2. The consistent rate of inert gas ejected from multiple outlets results in a more uniform thickness of the inert gas surface. Corresponding to the target material, this ensures that the number of target atoms sputtered from each region of the target material tends to be consistent, thereby guaranteeing the uniformity of the film thickness and the film formation rate on the substrate. Attached Figure Description
[0017] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of the overall device in an embodiment of the present invention; Figure 2 This is a schematic diagram of the device in an embodiment of the present invention with the rear plate removed. Figure 3 This is a top sectional view of the device in an embodiment of the present invention; Figure 4 This is a schematic diagram of the air intake plate in an embodiment of the present invention; Figure 5 This is a schematic diagram of the air extraction device, air extraction hole, and guide plate in an embodiment of the present invention; Figure 6 This is a front view of the guide plate and air extraction hole in an embodiment of the present invention; Figure 7 This is a schematic diagram of gas flow at the guide plate at the first guide sidewall in an embodiment of the present invention.
[0019] Explanation of reference numerals in the attached figures: 1. Mounting box; 2. Sputtering chamber; 3. Vacuum chamber; 4. Sputtering cathode; 5. Inlet plate; 51. Inlet pipe; 52. Gas path plate; 53. Graphite plate; 54. Gas path sealing plate; 6. Evacuation port; 7. Evacuation device; 8. Guide plate; 9. Guide hole; 91. First guide sidewall; 92. Second guide sidewall; 10. Inner convex part; 11. Outer concave part; 12. Connecting part; 13. Substrate. Detailed Implementation
[0020] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0022] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.
[0023] This invention provides a sputtering coating apparatus, such as... Figure 1-Figure 2As shown, the system includes a mounting box 1, which contains a sputtering chamber 2 and a vacuum chamber 3. The sputtering chamber 2 and the vacuum chamber 3 are connected. The sputtering chamber 2 contains a sputtering cathode 4, on which a target material is placed. The sputtering cathode 4 is equipped with an inlet plate 5, which has an inlet pipe 51 for introducing inert gas (such as argon) required for sputtering. The outlet of the inlet pipe 51 is located inside the sputtering cathode 4 and is positioned directly opposite the target material, so that the introduced inert gas can be sprayed onto the target material. The vacuum chamber 3 has an inlet and an outlet. In actual operation, the support carrying the substrate 13 enters the vacuum chamber 3 from the inlet and then moves through the sputtering port of the sputtering chamber 2. Under the action of the cathode (target) 1-3KV DC negative high voltage or 13.56MHz radio frequency voltage, a glow discharge is generated. The ionized inert ions bombard the surface of the target material, causing target atoms to sputter out and deposit on the substrate 13 to form a thin film, thus completing the coating. The inlet and outlet are respectively located at the two ends of the vacuum chamber 3 along the first direction, and the vacuum chamber 3 and the sputtering chamber 2 are distributed along the second direction.
[0024] Specifically, to ensure the uniformity of the thin film formed on the substrate 13, the inert gas sprayed from the air inlet plate 5 towards the target needs to be evenly distributed on the target. Therefore, the flow rate of the gas sprayed from each outlet of the air inlet plate 5 at the same time needs to be the same. In this embodiment, the air inlet pipe 51 has one main air inlet and multiple main air outlets, which are distributed along the length or width of the target, so that the inert gas sprayed from the multiple main air outlets can cover the target. Specifically, as shown in the figure... Figure 4As shown, the intake pipe 51 includes multiple layers of air passages arranged along the air flow direction. These layers can be divided into multiple levels from top to bottom, with adjacent layers connected. The intake port is located in the uppermost layer, and multiple outlets are located in the lowermost layer. Each layer includes at least one sub-air passage, with one intake port and n times the number of outlets. In adjacent layers, the number of outlets in the upper layer is equal to the number of sub-air passages in the lower layer, and each outlet is connected to the intake port of the corresponding sub-air passage in the lower layer. This ensures that all layers are connected and that the air passage length between each of the n outlets and one intake port in each sub-air passage is consistent. This guarantees that the air passage length between the multiple outlets and the intake ports in each layer is consistent, ensuring that the gas exit rate and volume at each outlet are consistent. Looking at the entire air intake pipe 51, since the length of the gas path between the air outlet and the air inlet of each layer is consistent, the length of the gas path between the multiple total air outlets (the multiple air outlets connected to the bottom layer) of the entire air intake pipe 51 and the total air inlet of the air intake pipe 51 is also consistent. Moreover, since each sub-gas path in each layer of the gas path is set independently, the gas flow will not interfere with each other, thus further ensuring that the gas output rate and gas output of the multiple total air outlets of the entire air intake pipe 51 are consistent. Therefore, the gas surface formed by the air intake pipe 51 and ionized by the sputtering cathode 4 is uniform overall. Thus, when the sputtering cathode 4 is energized for glow discharge, the ionized inert ions can bombard every part of the target material more uniformly, and the number of target atoms sputtered from each part of the target material tends to be consistent and are deposited on the corresponding points on the surface of the substrate 13, which will ultimately make the thin film obtained on the surface of the substrate 13 uniform.
[0025] To better understand the distribution of the intake pipe 51, the specific details are as follows: The first layer has only one sub-air passage, which is connected to the main intake port and has n air outlets. The second layer needs to have n sub-air passages and n² air outlets. The third layer has n² sub-air passages and n³ air outlets, and so on, forming the entire intake pipe 51. However, to balance the volume of the intake plate 5 and the complexity of the intake pipe 51, in this embodiment, as... Figure 4 As shown, n is set to 2, that is, the first layer has only one sub-air path, the sub-air path of the first layer is connected to the main air intake and has 2 air outlets, the second layer needs to have 2 sub-air paths and 4 air outlets, the third layer has 4 sub-air paths and 8 air outlets, and so on to form the entire air intake pipe 51, forming a binary air intake pipe 51.
[0026] Specifically, in this embodiment, such as Figure 4As shown, the air intake plate 5 includes an air passage plate 52, a graphite plate 53, and an air passage sealing plate 54. The air passage plate 52 is provided with an installation groove, and the air intake pipe 51 is located at the bottom of the installation groove. The air passage sealing plate 54 is detachably installed in the installation groove, and the graphite plate 53 is located at the bottom of the installation groove and between it and the air passage sealing plate 54. As a sealing element, it works in conjunction with the air passage sealing plate 54 to seal the air intake pipe 51, preventing inert gas from leaking into the vacuum chamber 3 and affecting the stability of the coating.
[0027] Furthermore, since the entire sputtering coating apparatus requires the gas pressure inside the vacuum chamber 3 to be at the working gas pressure to ensure the stability of the sputtering coating on the substrate 13, the vacuum chamber 3 needs to be at the working gas pressure through the pumping device 7 before the sputtering coating process can begin. However, during the sputtering coating process, inert gas needs to be continuously introduced to the target material on the sputtering cathode 4 to generate ionization. If the non-ionized gas exists for a long time, it will inevitably affect the gas pressure inside the vacuum chamber 3 and cause it to rise. Therefore, during this period, the pumping device 7 needs to be dynamically turned on to dynamically balance the gas pressure inside the vacuum chamber 3 and keep it at the working gas pressure to ensure the stability of the sputtering coating on the substrate 13.
[0028] Specifically, in this embodiment, such as Figure 3 and Figure 5As shown, the extraction port 6 and sputtering cavity 2 are distributed along the first direction and located on the same side relative to the substrate. This can be understood as the extraction port 6 and sputtering cavity 2 being located on the same side wall of the vacuum cavity 3. The inert gas coming out of the sputtering cavity 2 will enter the vacuum cavity 3 and then move along the first direction to the extraction port 6, where it will be extracted. Since the gas enters the vacuum cavity 3 from the sputtering cavity 2 and then moves to the extraction port 6, the inert gas will flow close to the side wall where the extraction port 6 is located during the extraction process. This will cause the gas flow to slow down, reducing the extraction efficiency. Moreover, due to the influence of the extraction direction, it will affect the sputtering rate of target ions onto the substrate 13. To solve the above problems, a guide plate 8 is provided at the extraction port 6. The guide plate 8 is arranged parallel to the side wall of the vacuum cavity 3 where the extraction port 6 is located, and the two are spaced apart along the second direction to form an extraction cavity. A connection to the extraction cavity is provided on the guide plate 8. The guide hole 9 allows gas to enter the evacuation chamber. Due to the presence of the evacuation chamber and the fact that the guide hole 9 is positioned directly opposite the evacuation hole 6 along the second direction, the guide hole 9 indirectly becomes the evacuation hole 6. The guide hole 9 is spaced apart from the wall of the vacuum chamber 3, so during the evacuation process, the gas will flow obliquely toward the guide hole 9, thus changing most of the gas from flowing along the wall to flowing within the vacuum chamber 3. This accelerates the gas evacuation rate to a certain extent, quickly maintaining the gas pressure at the sputtering chamber 2 and the substrate 13 at the working gas pressure, ensuring the stability of the sputtered coating. In addition, since most of the gas will move obliquely toward the guide hole 9, i.e. toward the other wall of the vacuum chamber 3, it will drive the target ions toward the substrate 13, rather than toward the wall of the sputtering chamber 2. This accelerates the rate at which the target ions reach the surface of the substrate 13, ensuring coating efficiency and coating quality.
[0029] Furthermore, such as Figure 6 and Figure 7As shown, the guide hole 9 has a first guide sidewall 91 and a second guide sidewall 92 that are opposite each other along the first direction. The projection on the wall of the vacuum chamber 3 is located outside the extraction hole 6. The first guide sidewall 91 is closer to the sputtering chamber 2 along the first direction than the second guide sidewall 92. When the extraction device 7 is working, the gas moves to the guide plate 8 and enters the extraction chamber through the first guide sidewall 91. Since the extraction hole 6 is generally set as a circle, the closer the extraction hole 6 is to the center in the third direction, the greater its extraction rate. In order to ensure that the air intake and extraction rate of each area of the extraction hole 6 tend to be consistent in the third direction, the first sidewall is made to bulge inward along the first direction to form an inner bulge 10. The horizontal plane where the axis of the extraction hole 6 is located and parallel to the third direction is set as the first plane. The closer the sidewall of the inner bulge 10 is to the axis of the extraction hole 6 in the third direction, the shorter the vertical distance between it and the first plane. That is, the half of the guide plate 8 where the inner bulge 10 is located is closer to the axis of the extraction hole 6 in the third direction along the second direction. The lengths of the airflow are distributed from small to large and then back to small, with the maximum length corresponding to the axis of the extraction hole 6. This length can be regarded as the path of the gas along the first direction on the guide plate 8. Therefore, when the airflow enters the guide plate 8 and flows along the first direction, in the third direction, the more the gas flow direction is biased towards the axis of the extraction hole 6, the longer the flow path on the guide plate 8, and the speed will also decrease accordingly. Corresponding to the pumping speed distribution of the extraction hole 6 along the third direction, in areas with high pumping speed, the gas flow path is long and the inflow rate is reduced more, while in areas with high pumping speed, the gas flow path is short and the inflow rate is relatively low. This ensures the uniformity of gas extraction in each area of the extraction hole 6, that is, the air intake and pumping rate tend to be consistent. Reflected in the sputtering chamber 2 and the vacuum chamber 3, in the third direction, the gas movement speed in each area can be made consistent, which can form laminar flow, avoid the generation of eddies, and further ensure the stability of the sputtering target ions moving toward the substrate 13.
[0030] It is also important to know that the stability of the sputtered coating on substrate 13 depends not only on the uniformity of the gas intake at sputtering cathode 4 (gas intake rate and volume), but also on the uniformity of gas extraction in each region at extraction port 6 (gas extraction rate and volume). This means ensuring that the inert gas in each region of the vacuum chamber 3 moves at a consistent speed, avoiding excessive differences in gas velocity during extraction that could generate eddies, leading to gas backflow and affecting the adhesion rate of target ions. The two are not simply a matter of one plus one equals two. Ensuring the uniformity of the gas intake at sputtering cathode 4 while simultaneously ensuring the uniformity of gas extraction in each region at extraction port 6 can greatly improve the adhesion rate and uniformity of the sputtered coating on substrate 13.
[0031] Furthermore, the two ends of the inner convex portion 10 along the third-direction inner sidewall are located at the two ends of the first guide sidewall 91, thus making the entire first guide sidewall 91 convex, ensuring that the gas velocity in and around the extraction hole 6 is uniform. In actual design, the length of the first guide sidewall 91 in the third-direction is basically the same as the length of the extraction hole 6 in the third-direction. Since the extraction hole 6 is generally circular, the extraction velocity on both sides of the axis of the extraction hole 6 in the third-direction is symmetrical. Therefore, further, the plane containing the axis of the extraction hole 6 and perpendicular to the third-direction is set as the second plane, and the inner convex portion 10 is symmetrically arranged about the second plane, so that the symmetrical inner convex portion 10 and the symmetrical extraction hole 6 are correspondingly arranged, so that the gas velocity guidance tends to be consistent.
[0032] Although the first guide sidewall 91 has an inner protrusion 10, the inner protrusion 10 has two configurations relative to the extraction hole 6. One is located outside the extraction hole 6, meaning the projection of the inner protrusion 10 along the second direction on the sidewall of the vacuum chamber 3 does not cover the extraction hole 6. This type of guide effect is somewhat poor. The other is partially located inside the extraction hole 6, meaning the projection of the inner protrusion 10 along the second direction on the sidewall of the vacuum chamber 3 partially covers the extraction hole 6. This partially blocks the extraction hole 6 along the second direction. The closer it is to its axis in the third direction, the more it is blocked. This allows for more effective limitation of the extraction volume, ensuring that the extraction volume and extraction rate are consistent across the extraction areas, resulting in a relatively better guide effect. It should be noted that although the extraction hole 6 is partially blocked, the pressure change range in the vacuum chamber 3 is not large during the coating process, so the extraction volume is not large. The focus is on ensuring that the extraction rate is consistent and relatively high across the vacuum chamber 3. Therefore, partial blocking is more effective.
[0033] Although the half of the guide plate 8 with the inner protrusion 10, located on the first guide sidewall 91, plays a dominant role in the main flow during the evacuation process, some gas will still flow through the area where the second guide sidewall 92 is located and then enter the guide hole 9. Therefore, the second guide sidewall 92 and the first guide sidewall 91 are symmetrically arranged about the first plane, so that the shapes of the second guide sidewall 92 and the first guide sidewall 91 are consistent. During the evacuation process, the guiding speed of the two halves of the guide plate 8 tends to be consistent, which further ensures that the gas flow speed in each area of the vacuum chamber 3 distributed along the third direction tends to be consistent.
[0034] Furthermore, the extraction port 6 can be set as one or multiple. In this embodiment, the extraction port 6 is set as multiple. Correspondingly, the extraction device 7 and the guide hole 9 are provided with multiple extraction ports 6. In order to ensure that the multiple guide holes 9 are evenly distributed along the third direction, adjacent guide holes 9 can be connected or not connected. However, in this embodiment, adjacent guide holes 9 are connected to form a guide channel, so that the guide channel can correspond to the cavity height of the vacuum cavity 3 along the third direction along the third direction, so that the gas can move in the vacuum cavity 3 as much as possible along the first direction. However, in order to ensure that the gas extraction rate is consistent with the extraction rate on the inner protrusion 10, the side wall of the connecting part 12 between two adjacent guide holes 9 is recessed along the first direction to form an outer protrusion, and the outer concave part 11 is symmetrically arranged to meet the gas extraction rate of each part of the guide plate 8 along the third direction in the entire guide channel.
[0035] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.
Claims
1. A sputtering coating apparatus, characterized in that, The device includes a mounting box having a sputtering cavity and a vacuum cavity for moving a substrate along a first direction. The sputtering cavity and the vacuum cavity are distributed along a second direction and are connected to each other. The first direction is perpendicular to the second direction and is in the same plane. A sputtering cathode is provided inside the sputtering cavity, a target material is provided on the sputtering cathode, an air inlet plate is provided on the sputtering cathode, the air inlet plate has an air inlet pipe, and multiple air outlets of the air inlet pipe are located inside the sputtering cathode and are evenly arranged facing the target material. The vacuum chamber has an air extraction hole, and an air extraction device is provided at the air extraction hole. It is used in conjunction with the air inlet plate during the coating process to keep the vacuum chamber at the working pressure. The air intake pipeline includes multiple layers of air passages arranged along the air passage direction. Each layer of air passage includes at least one sub-air passage. The number of air inlets of the sub-air passage is set to one, and the number of air outlets is set to n times the number of air inlets. In two adjacent layers of air passages, the number of air outlets of the upper layer of air passage is equal to the number of sub-air passages in the lower layer of air passage, and they are connected to the air inlets of the lower sub-air passages. The length of the air passage between each of the n air outlets and its air inlet in each sub-air passage is the same, and each sub-air passage in each layer of the air passage is set independently.
2. The sputtering coating apparatus according to claim 1, characterized in that, The number of air outlets in the sub-gas path is set to twice the number of its air inlets.
3. The sputtering coating apparatus according to claim 2, characterized in that, The air intake plate includes an air passage plate, a graphite plate, and an air passage sealing plate; The gas circuit board is provided with an installation groove, the air intake pipe is located at the bottom of the installation groove, the gas circuit sealing plate is installed in the installation groove, and the graphite plate is located at the bottom of the installation groove and between the graphite plate and the gas circuit sealing plate to seal the air intake pipe.
4. The sputtering coating apparatus according to claim 2, characterized in that, The air extraction holes and the sputtering cavity are distributed along the first direction and are located on the same side relative to the substrate; A guide plate is provided at the air extraction port, and the guide plate is provided with guide holes. The guide holes are positioned directly opposite the air extraction port along the second direction. The guide plate is parallel to the side wall of the vacuum chamber where the air extraction port is located and is spaced apart along the second direction, forming an air extraction chamber.
5. The sputtering coating apparatus according to claim 4, characterized in that, The flow guide hole has a first flow guide sidewall and a second flow guide sidewall opposite each other along the first direction. The second flow guide sidewall is located outside the air extraction hole along the first direction, and the first flow guide sidewall is closer to the sputtering cavity than the second flow guide sidewall along the first direction. The first guide sidewall has an inwardly convex portion formed along the first direction; The horizontal plane containing the axis of the air extraction hole and parallel to a third direction is defined as the first plane. The closer the inner convex sidewall is to the axis of the air extraction hole along the third direction, the shorter the vertical distance between it and the first plane.
6. The sputtering coating apparatus according to claim 5, characterized in that, The two ends of the inner convex portion along the third-direction inner sidewall are located at the two ends of the first flow guide sidewall.
7. The sputtering coating apparatus according to claim 6, characterized in that, The plane containing the axis of the air extraction hole and perpendicular to a third direction is designated as the second plane, and the inner convex portion is symmetrically arranged about the second plane.
8. The sputtering coating apparatus according to claim 7, characterized in that, The projection of the inner protrusion onto the sidewall of the vacuum chamber along the second direction covers a portion of the evacuation hole.
9. The sputtering coating apparatus according to claim 8, characterized in that, The second guide sidewall and the first guide sidewall are symmetrically arranged about the first plane.
10. The sputtering coating apparatus according to claim 5, characterized in that, The air extraction port is provided in multiple ways, and the air extraction device is provided in multiple ways accordingly; The plurality of air extraction holes are evenly distributed along a third direction, and the plurality of flow guide holes are distributed along a third direction. Adjacent flow guide holes are connected by a communication port, and the sidewall of the communication port is recessed outward along a first direction.
Citation Information
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