Test device, probe card position confirmation method, and wafer test method

Abstract

The invention relates to a testing device, a probe card position confirmation method and a wafer testing method. The testing device comprises a plurality of probe groups, and each probe group comprises a probe card, a plurality of probe terminals and a plurality of probe terminals, the accompanying table is connected to one side of the base plate; the accompanying needle can be movably inserted into the accompanying table and is parallel to the probe; the scale is connected to the accompanying table; the light source is connected to the accompanying table, the accompanying needle is located between the light source and the scale, and the light source is used for emitting light towards the scale so that the accompanying needle can form projection on the scale; wherein when the probe is inserted into the to-be-detected crystal grain, the accompanying needle moves along the first direction relative to the accompanying table under the blocking of the to-be-detected crystal grain, and the depth of the probe inserted into the crystal grain is obtained based on the projection distance of the accompanying needle on the scale. Consistency of depths of probes in a plurality of probe groups of the testing device inserted into a wafer can be realized, and testing accuracy and reliability are improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor testing technology, and in particular to a testing device and a method for confirming the position of a probe card, and a wafer testing method. Background Technology

[0002] The MS (Multisite) test bench is a parallel reliability testing system with multiple independent probe cards, each adjustable in distance along the X, Y, and Z axes. Probe cards are core consumables in wafer testing (CP testing), acting as the physical and electrical bridge between the test equipment and the wafer chip; their performance directly impacts test accuracy, cost, and efficiency.

[0003] The distances of the probe card relative to the wafer under test in three directions need to be manually adjusted to ensure good contact between the probe and the wafer under test. In particular, the distance in the Z direction directly affects the contact quality between the probe and the wafer under test.

[0004] Currently, operators determine whether the adjustment in the Z direction is in place based on the size of the probe marks left on the test wafer. This method has low reliability and can affect the test results. Summary of the Invention

[0005] In view of this, the present application provides a testing device and a method for confirming the position of a probe card, as well as a wafer testing method, to solve at least one problem existing in the background art.

[0006] In a first aspect, embodiments of this application provide a testing apparatus for testing multiple grains in a test region on a wafer. The testing apparatus includes multiple probe groups, each probe group comprising:

[0007] A probe card having a substrate and a plurality of probes vertically connected to the substrate;

[0008] A supporting platform is attached to one side of the substrate;

[0009] A liner needle is movably inserted into the liner stage and is arranged parallel to the probe.

[0010] A ruler is attached to the accompaniment platform and is set perpendicular to the accompaniment platform.

[0011] A light source is connected to the accompaniment platform, and the accompaniment needle is located between the light source and the scale. The light source is used to emit light towards the scale so that the accompaniment needle can form a projection on the scale.

[0012] Wherein, when the probe does not contact the surface of the grain to be tested, the bottom end of the probe and the surrogate needle are on the same horizontal plane, and the top end of the surrogate needle and the light source are on the same horizontal plane;

[0013] When the probe is inserted into the die to be tested, the surrogate needle moves relative to the surrogate stage along a first direction under the obstruction of the die to be tested. The depth of the probe inserted into the die is obtained based on the projection distance formed by the surrogate needle on the scale. The first direction is the axial direction of the probe.

[0014] In conjunction with the first aspect of this application, in an optional embodiment, the accompaniment platform is provided with a groove, and the tip of the accompaniment needle can be accommodated in the groove so that the tip of the accompaniment needle is at the same horizontal plane as the light source.

[0015] In conjunction with the first aspect of this application, in an optional embodiment, the probe assembly further includes a limiting protrusion connected to the top end of the liner needle and adapted to the groove, wherein the outer diameter of the limiting protrusion is larger than the outer diameter of the liner needle.

[0016] In conjunction with the first aspect of this application, in an alternative embodiment, the probe set further includes:

[0017] A guide member is connected to the lining platform, the guide member is adapted to the lining needle and is fitted onto the lining needle, the guide member extends along the first direction to guide the lining needle during movement.

[0018] Secondly, embodiments of this application provide a method for confirming the position of a probe card based on a testing apparatus provided according to the first aspect embodiment, the confirmation method comprising:

[0019] Confirm the position and orientation of the surrogate pin when the probe is in its initial position, where the initial position is the position when the probe is not in contact with the grain;

[0020] Obtain a first distance between the light source and the accompaniment needle, and a second distance between the light source and the scale.

[0021] This causes the probe card to move along the first direction;

[0022] Obtain the projected distance of the chaperone needle on the scale;

[0023] Based on the first distance, the second distance, and the projected distance, the correspondence between the position of the probe relative to the grain and the projected distance is determined.

[0024] In conjunction with a second aspect of this application, in an optional embodiment, confirming the position and orientation of the surrogate pin when the probe is in its initial position includes:

[0025] Confirm whether the bottom end of the liner pin and the bottom end of the probe are on the same horizontal plane; and confirm whether the top end of the liner pin and the light source are on the same horizontal plane.

[0026] In conjunction with a second aspect of this application, in an optional embodiment, determining the correspondence between the position of the probe relative to the grain and the projected distance based on the first distance, the second distance, and the projected distance includes:

[0027] Based on the first distance, the second distance, and the projected distance, a third distance is obtained in which the chaperone needle rises from the initial position, wherein the third distance corresponds to the depth at which the probe is inserted into the grain.

[0028] Thirdly, embodiments of this application provide a wafer testing method, the testing method comprising:

[0029] Confirm the position and orientation of the liner pin when the probe is in its initial position, where the initial position is the position when the probe is not in contact with the grain surface;

[0030] This causes the probe card to move along the first direction;

[0031] The correspondence between the probe's position relative to the die and the projected distance is determined by the probe card position confirmation method provided according to any embodiment of the second aspect.

[0032] The projection distance on the scale in the plurality of probe groups is confirmed to be within a first preset threshold range, so that the depth to which the probes in the plurality of probe groups are inserted into the grain is consistent.

[0033] In conjunction with a third aspect of this application, in an optional embodiment, the testing method further includes:

[0034] When the projected distance on the scale is within the second preset threshold range, the bottom of the probe contacts the grain, the grain is in a high temperature state, and the probe is in a normal temperature state.

[0035] The probe card pauses movement for a preset time;

[0036] When the temperature of the grain is close to or equal to the temperature of the probe, the probe card continues to move.

[0037] In conjunction with a third aspect of this application, in an optional embodiment, the probes in the plurality of probe groups are inserted into the grain to the same depth, including:

[0038] When it is confirmed that the projection distance on the scale in multiple probe groups is within the first preset threshold range, the insertion depth of the probe in the corresponding probe group into the grain is within the third preset threshold range.

[0039] The testing device and probe card position confirmation method and wafer testing method provided in this application embodiment are designed so that the operator can determine the depth of probe insertion into the wafer by the projection distance of the shim on the scale. This can achieve the consistency of probe insertion depth in multiple probe groups of the testing device, improve the accuracy and reliability of the test, and also protect the wafer from damage caused by over-insertion.

[0040] In addition, the probe card position confirmation method can determine the probe insertion depth into the die in real time by the projection distance of the surrogate pin on the scale. This confirmation method is simple and easy to operate. Furthermore, it can ensure the reliability of probe-die contact during wafer testing, achieve consistency of probe insertion depth into the wafer in multiple probe groups, and avoid over-insertion of probes that could damage the die or probes.

[0041] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0042] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0043] Figure 1 This is a schematic diagram showing the state of a probe inserted into a die in the testing apparatus provided in the embodiments of this application;

[0044] Figure 2 This is a schematic diagram of the state in which the probe is not inserted into the die in the testing device provided in the embodiments of this application;

[0045] Figure 3 A flowchart illustrating the method for confirming the position of a probe card provided in an embodiment of this application;

[0046] Figure 4 This is a schematic flowchart of a wafer testing method provided in an embodiment of this application.

[0047] Figure label:

[0048] 100. Probe set;

[0049] 10. Probe card; 11. Substrate; 12. Probe;

[0050] 20. Supporting table; 21. Groove;

[0051] 30. Supporting pin; 40. Scale; 50. Light source; 60. Limiting protrusion; 70. Grain. Detailed Implementation

[0052] To make the technical solution and beneficial effects of the present invention more apparent and understandable, a detailed description is provided below by listing specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application pertains.

[0053] In the description of this invention, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "height," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the purpose of simplifying the description of this invention and do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. That is, they should not be construed as limiting this invention.

[0054] In this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating the relative importance of the indicated features or the number of indicated technical features. Therefore, a feature specified as "first" or "second" can explicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc.; "several" means at least one, such as one, two, three, etc., unless otherwise explicitly specified.

[0055] In this invention, unless otherwise explicitly defined, the terms "installation," "connection," "linking," "fixing," and "setting," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0056] In this invention, unless otherwise explicitly defined, the terms "above," "on top of," "over," "above," "below," "below," "below," or "below" for "first feature above second feature" can refer to the first and second features being in direct contact, or to the first and second features being in indirect contact through an intermediate medium. Furthermore, "above," "over," and "below" for "first feature above second feature" can mean the first feature is directly above or diagonally above the second feature, or simply indicates that the horizontal height of the first feature is higher than the horizontal height of the second feature. Similarly, "below," "below," and "below" for "first feature below second feature" can mean the first feature is directly below or diagonally below the second feature, or simply indicates that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0057] This application provides a testing device, please refer to the embodiments thereof. Figure 1 and Figure 2 This testing apparatus is used to test multiple dies 70 in a test area on a wafer. After completing the test of one test area, the apparatus moves to another test area on the wafer to test multiple dies 70 in that other test area, thereby achieving wafer reliability testing. The testing apparatus includes multiple probe groups 100, each probe group 100 including a probe card 10, a stage 20, a probe pin 30, a scale 40, and a light source 50.

[0058] The probe card 10 is a vertical probe card 10, which has a substrate 11 and a plurality of probes 12 vertically connected to the substrate 11. These probes 12 are vertically fixed on the substrate 11 and are used to contact the area to be tested on the wafer for testing.

[0059] The accompaniment platform 20 is connected to one side of the base plate 11, providing support and mounting positions for the accompaniment needle 30, power supply and scale 40.

[0060] The accompaniment pin 30 is movably inserted into the accompaniment stage 20 and is arranged parallel to the probe 12. The accompaniment pin 30 can slide freely in the vertical direction within the accompaniment stage 20. Its bottom end is initially located on the same horizontal plane as the bottom end of the probe 12, while its top end is located on the same horizontal plane as the light source 50 through the design of the groove 21.

[0061] A scale 40 is connected to and perpendicular to the accompaniment platform 20. The scale 40 is marked with graduations for measuring the projected distance of the accompaniment needle 30 onto the scale 40. The scale 40 is fixed in position to ensure accuracy and consistency of measurement.

[0062] A light source 50 is connected to a stage 20, and a supporting needle 30 is located between the light source 50 and a scale 40. The light source 50 emits light towards the scale 40, allowing the supporting needle 30 to project a shadow onto the scale 40. The light emitted by the light source 50 casts a shadow on the scale 40 after passing through the supporting needle 30. By measuring the positional change of this shadow, the distance the supporting needle 30 has moved can be calculated. The specific type of the light source 50 is not specifically limited in this embodiment; for example, it could be a laser source.

[0063] When the probe 12 is not in contact with the surface of the grain 70 to be measured, the bottom of the probe 12 and the support pin 30 are on the same horizontal plane, and the top of the support pin 30 and the light source 50 are on the same horizontal plane. This initial position setting ensures the reference point for measurement.

[0064] When probe 12 is inserted into the die 70 to be tested, the surrogate needle 30 moves relative to the surrogate stage 20 along a first direction, which is the axial direction of probe 12, under the obstruction of the die 70. Since the surrogate needle 30 and probe 12 are initially located on the same horizontal plane, when probe 12 is inserted into die 70, the surrogate needle 30 will also contact the wafer surface and be pushed upward. The movement of the surrogate needle 30 will change its projection position on the scale 40. By measuring this change in projection distance, the depth of probe 12 inserted into die 70 can be accurately calculated.

[0065] During testing, the operator first positions the testing device above the wafer under test, aligning probe 12 with the area to be tested. The testing device is then gradually lowered until probe 12 and the support pin 30 simultaneously contact the wafer surface. As the testing device continues to descend, probe 12 inserts into the die 70 for testing, while the support pin 30 is blocked by the wafer surface and moves upwards. At this point, the light emitted by the light source 50 passes through the moved support pin 30, forming a new projection position on the scale 40. By reading the scale changes on the scale 40, the operator can accurately calculate the insertion depth of probe 12 into the die 70, ensuring that the insertion depth of probe 12 is controlled within a suitable range during testing, guaranteeing good electrical contact without causing excessive damage to the die 70.

[0066] The design of this testing device allows operators to determine the depth of probe 12 inserted into the wafer by projecting the distance of the surrogate needle 30 onto the scale 40. This enables consistency in the insertion depth of probe 12 into the wafer across multiple probe groups 100 of the testing device, improving the accuracy and reliability of the test, while also protecting the wafer from damage caused by over-insertion.

[0067] In an optional embodiment, the accompaniment platform 20 is provided with a groove 21, which is designed so that the tip of the accompaniment needle 30 can be accommodated within the groove 21, thereby placing the tip of the accompaniment needle 30 on the same horizontal plane as the light source 50. The depth and width of the groove 21 are matched with the size of the accompaniment needle 30, ensuring that the accompaniment needle 30 can be stably mounted on the accompaniment platform 20 and can move freely in the vertical direction.

[0068] In an optional embodiment, the top end of the lining needle 30 is connected to a limiting protrusion 60, which is adapted to the groove 21. The outer diameter of the limiting protrusion 60 is larger than the outer diameter of the lining needle 30. The design of the limiting protrusion 60 can prevent the lining needle 30 from falling out of the lining table 20 under its own weight, and also facilitates the operator to adjust the position of the lining needle 30.

[0069] In an optional embodiment, the probe assembly 100 further includes a guide (not shown) connected to the stage 20, adapted to and fitted onto the liner needle 30, and extending in a first direction to guide the liner needle 30 during movement.

[0070] The guide in this embodiment enables the accompaniment needle 30 to always move along the first direction during its ascent, preventing the accompaniment needle 30 from deviating during its movement, thereby ensuring the accuracy of the projection distance of the accompaniment needle 30 on the scale 40, and thus ensuring the reliability and accuracy of the test results.

[0071] In an optional embodiment, the inner wall of the guide and the outer wall of the liner needle 30 are surface-treated to reduce the friction between them, further ensuring the accuracy of the test results. Furthermore, the specific structure of the guide is not specifically limited in this embodiment and can be configured according to specific needs.

[0072] This application also provides a method for confirming the probe card position based on the testing device provided in the above embodiments. Please refer to [link / reference]. Figures 1 to 3 The confirmation method includes the following steps:

[0073] S11. Confirm the position and orientation of the chaperone 30 when the probe 12 is in its initial position.

[0074] In this step, it is first confirmed that the bottom end of the surrogate pin 30 and the bottom end of the probe 12 are on the same horizontal plane; secondly, it is confirmed that the top end of the surrogate pin 30 and the light source 50 are on the same horizontal plane. These two confirmation steps ensure that the surrogate pin 30 is in the correct initial position when the probe 12 is not in contact with the grain 70, providing a reference for subsequent measurements. The initial position refers to the position of the probe 12 when it is not in contact with the grain 70.

[0075] S12, Obtain the first distance between the light source 50 and the supporting pin 30 (that is, Figure 1 The second distance (i.e., L1 shown in the figure) between the light source 50 and the scale 40. Figure 1 L2 is shown in the figure.

[0076] In this step, the distance between the light source 50 and the chaperone 30 is measured and recorded as the first distance, and the distance between the light source 50 and the scale 40 is measured and recorded as the second distance. These two distance parameters are important bases for subsequent calculation of the insertion depth of the probe 12.

[0077] S13, causing the probe card 10 to move along the first direction (i.e., Figure 1 The direction of the arrow s1 is shown in the image.

[0078] In this step, the probe card 10 is moved toward the die 70, so that the probe 12 begins to contact and insert into the die 70. At this time, since the surface of the die 70 blocks the movement of the surrogate needle 30, the surrogate needle 30 will move upward relative to the surrogate stage 20 in the first direction (i.e., the axial direction of the probe 12).

[0079] S14. Obtain the projected distance of the chaperone 30 on the scale 40 (i.e., ...). Figure 1 L4 is shown in the figure.

[0080] In this step, after the probe 12 is inserted into the die 70, the light emitted by the light source 50 is blocked by the chaperone 30, forming a projection on the scale 40. The projection distance of the chaperone 30 on the scale 40 is obtained by reading the scale on the scale 40.

[0081] S15. Based on the first distance, the second distance, and the projection distance, the correspondence between the position of probe 12 relative to the grain 70 and the projection distance is obtained.

[0082] In this step, based on the first distance, the second distance, and the projected distance, the third distance by which the supporting pin 30 rises from its initial position is calculated (i.e., Figure 1 (L3 shown in the figure). Based on the principles of geometric optics, using the relationship of similar triangles, the actual displacement of the chaperone 30 can be calculated from the projected distance. This third distance is related to the depth of the probe 12 inserted into the grain 70 (i.e., Figure 1 This is consistent with L5 shown in the figure, because in the initial state the bottom of the probe 12 and the liner pin 30 are on the same horizontal plane, and when the probe 12 is inserted into the die 70, the distance that the liner pin 30 moves upward due to being blocked by the surface of the die 70 is exactly equal to the depth of the probe 12 inserted into the die 70.

[0083] The above-mentioned method for confirming the position of the probe card 10 can determine the depth of the probe 12 inserted into the die 70 in real time by projecting the distance of the accompaniment pin 30 on the scale 40. This confirmation method is simple and easy to operate. Furthermore, it can ensure the reliability of the contact between the probe 12 and the die 70 during the test, and can achieve the consistency of the insertion depth of the probe 12 into the wafer in multiple probe groups 100, while avoiding over-insertion of the probe 12 that could damage the die 70 or the probe 12.

[0084] This application also provides a wafer testing method, please refer to... Figures 1 to 4 The testing method includes the following steps:

[0085] S21. Confirm the position and orientation of the surrogate needle 30 when the probe 12 is in its initial position. The initial position refers to the position of the probe 12 before it contacts the surface of the grain 70. In this step, the position and orientation parameters of the surrogate needle 30 in its initial state need to be recorded to provide a reference for subsequent measurements.

[0086] S22. Obtain the first distance between the light source 50 and the supporting pin 30, and the second distance between the light source 50 and the scale 40. These two distance parameters are the basic data for calculating the relationship between the position of the probe 12 and the projected distance.

[0087] S23. The probe card 10 is moved along the first direction. In this step, the probe card 10 begins to move toward the grain 70, so that the probe 12 gradually approaches and eventually contacts the surface of the grain 70.

[0088] S24. The position of probe 12 relative to die 70 and the corresponding projection distance are confirmed using the probe card 10 position confirmation method provided in the above embodiment. That is, the depth of probe 12 inserted into die 70 can be determined by the projection distance on scale 40. The projection distance on scale 40 in multiple probe groups 100 is confirmed to be within a first preset threshold range so that the depth of probe 12 inserted into die 70 in multiple probe groups 100 is consistent. The first preset threshold range is set according to the actual situation, and this application embodiment does not make a specific limitation.

[0089] In the above wafer testing method, during the wafer testing process, the operator only needs to confirm whether the projected distance on the scale 40 is within the first preset threshold range to confirm the depth of the probe 12 inserted into the die 70. This can ensure the contact quality between the probe 12 and the die 70 during each test, and at the same time, it can ensure that the depth of the probe 12 inserted into the die 70 in multiple probe groups 100 is consistent, thus ensuring the reliability of the test results and avoiding deviations in test results due to inconsistent depths.

[0090] In an optional embodiment, when the projected distance on the scale 40 is within a second preset threshold range, the bottom end of the probe 12 contacts the die 70. The second preset threshold range is a specific range of projected distances. When the projected distance of the accompaniment needle 30 on the scale 40 falls within this range, it indicates that the probe 12 has just contacted the die 70. The second preset threshold range can be set according to specific needs, and this embodiment does not impose specific limitations.

[0091] In some wafer testing processes, the wafer is at a high temperature, meaning the wafer is at a high temperature while the probe 12 is at room temperature. When the probe 12 is inserted into the wafer, the temperature difference between the two is significant, potentially affecting the test results. Therefore, this embodiment determines the projected distance on the scale 40 within a second preset threshold range. Specifically, when the probe 12 just contacts the die 70, the probe holder 10 pauses its movement for a preset time to allow heat transfer between the die 70 and the probe 12. Testing continues when the temperature difference between the two is small or the same, thus ensuring the reliability of the test.

[0092] In an optional embodiment, the probes 12 in the multiple probe groups 100 are inserted into the wafer to the same depth. Specifically, when it is confirmed that the projected distance on the scale 40 in the multiple probe groups 100 is within a first preset threshold range, the insertion depth of the probes 12 in the corresponding probe group 100 into the die 70 is within a third preset threshold range. The third preset threshold range defines the allowable error range of the probe insertion depth, ensuring that the insertion depth of all probes 12 is sufficiently close, thereby guaranteeing the consistency and reliability of the test results.

[0093] The embodiments of this application can precisely control the insertion depth of the probe 12 into the die 70, ensuring that the insertion depth of the probe 12 in multiple probe groups 100 is consistent, improving the accuracy and reliability of wafer testing, and reducing test errors caused by poor contact of the probe 12 or inconsistent insertion depth.

[0094] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations included in the claims. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A testing device, characterized in that, The testing apparatus is used to test multiple grains in a test region on a wafer. The testing apparatus includes multiple probe groups, each probe group comprising: A probe card having a substrate and a plurality of probes vertically connected to the substrate; A supporting platform is attached to one side of the substrate; A liner needle is movably inserted into the liner stage and is arranged parallel to the probe. A ruler is attached to the accompaniment platform and is set perpendicular to the accompaniment platform. A light source is connected to the accompaniment platform, and the accompaniment needle is located between the light source and the scale. The light source is used to emit light towards the scale so that the accompaniment needle can form a projection on the scale. Wherein, when the probe does not contact the surface of the grain to be tested, the bottom end of the probe and the surrogate needle are on the same horizontal plane, and the top end of the surrogate needle and the light source are on the same horizontal plane; When the probe is inserted into the die to be tested, the surrogate needle moves relative to the surrogate stage along a first direction under the obstruction of the die to be tested. The depth of the probe inserted into the die is obtained based on the projection distance formed by the surrogate needle on the scale. The first direction is the axial direction of the probe.

2. The testing apparatus according to claim 1, characterized in that, The accompaniment platform is provided with a groove, and the tip of the accompaniment needle can be accommodated in the groove so that the tip of the accompaniment needle is on the same horizontal plane as the light source.

3. The testing apparatus according to claim 2, characterized in that, The probe assembly also includes a limiting protrusion, which is connected to the top of the liner needle and is adapted to the groove. The outer diameter of the limiting protrusion is larger than the outer diameter of the liner needle.

4. The testing apparatus according to claim 2, characterized in that, The probe set also includes: A guide member is connected to the lining platform, the guide member is adapted to the lining needle and is fitted onto the lining needle, the guide member extends along the first direction to guide the lining needle during movement.

5. A method for confirming the position of a probe card based on the testing apparatus as described in claim 1, characterized in that, The confirmation method includes: Confirm the position and orientation of the surrogate pin when the probe is in its initial position, where the initial position is the position when the probe is not in contact with the grain; Obtain a first distance between the light source and the accompaniment needle, and a second distance between the light source and the scale. This causes the probe card to move along the first direction; Obtain the projected distance of the chaperone needle on the scale; Based on the first distance, the second distance, and the projected distance, the correspondence between the position of the probe relative to the grain and the projected distance is determined.

6. The method for confirming the position of the probe card according to claim 5, characterized in that, Confirming the position and orientation of the chaperone pin when the probe is in its initial position includes: Confirm whether the bottom end of the liner pin and the bottom end of the probe are on the same horizontal plane; and confirm whether the top end of the liner pin and the light source are on the same horizontal plane.

7. The method for confirming the position of the probe card according to claim 5, characterized in that, Based on the first distance, the second distance, and the projected distance, the correspondence between the position of the probe relative to the grain and the projected distance is determined, including: Based on the first distance, the second distance, and the projected distance, a third distance is obtained in which the chaperone needle rises from the initial position, wherein the third distance corresponds to the depth at which the probe is inserted into the grain.

8. A method for testing a wafer, characterized in that, The testing method includes: Confirm the position and orientation of the liner pin when the probe is in its initial position, where the initial position is the position when the probe is not in contact with the grain surface; This causes the probe card to move along the first direction; The correspondence between the probe's position relative to the die and the projected distance is confirmed based on the probe card position confirmation method as described in claim 5. The projection distance on the scale in the plurality of probe groups is confirmed to be within a first preset threshold range, so that the depth to which the probes in the plurality of probe groups are inserted into the grain is consistent.

9. The wafer testing method according to claim 8, characterized in that, The testing method also includes: When the projected distance on the scale is within the second preset threshold range, the bottom of the probe contacts the grain, the grain is in a high temperature state, and the probe is in a normal temperature state. The probe card is paused for a preset time. When the temperature of the grain is close to or equal to the temperature of the probe, the probe card continues to move.

10. The wafer testing method according to claim 8, characterized in that, The probes in the plurality of probe groups are inserted into the grain to the same depth, including: When it is confirmed that the projection distance on the scale in multiple probe groups is within the first preset threshold range, the insertion depth of the probe in the corresponding probe group into the grain is within the third preset threshold range.

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