Light-emitting device and method for producing light-emitting device

Abstract

The light-emitting device has a semiconductor light source, a surrounding light-shielding element and a carrier substrate. The semiconductor light source and the light shielding element are arranged on the mounting side of the carrier substrate. The semiconductor guide source is in an inner region of the light-shielding element, which inner region is surrounded by an inner side of the light-shielding element. Viewed in a cross-section, the light-shielding element has an undercut at the inner side so as to have a shape protruding inwardly in a direction away from the mounting side of the carrier substrate. Furthermore, a method for producing a light-emitting device is described.

Description

Technical Field

[0001] This invention relates to a light-emitting device and a method for manufacturing the light-emitting device. Background Technology

[0002] The patent application claims priority to German patent application 10 2023 106 274.3, the disclosure of which is incorporated herein by reference.

[0003] A light-emitting device for use in a motor vehicle headlight may have a carrier substrate and a semiconductor light source disposed on the carrier substrate. Furthermore, the light-emitting device may have a potting material in a region laterally surrounding the semiconductor light source. To prevent the semiconductor light source from being covered during potting, a dam acting as a barrier may be provided on the carrier substrate, the dam surrounding the semiconductor light source circumferentially. The dam may be constructed by quantitatively dispensing a plastic material onto the carrier substrate using a dispensing machine. Thus, the dam may, by manufacturing, have a convex cross-sectional profile. This can cause reflection of light radiation at the dam during operation of the light-emitting device, resulting in the light radiation also being imaged in undesirable areas of the illuminated region, exhibiting a so-called ghosting, in which the light radiation emitted by the semiconductor light source can be projected onto the illuminated region using imaging optics. Summary of the Invention

[0004] The purpose of this invention is to provide an improved light-emitting device and a corresponding method for manufacturing the light-emitting device.

[0005] The objective is achieved through the features of the independent claim. Other advantageous embodiments of the invention are given in the dependent claims.

[0006] According to one aspect of the present invention, a light-emitting device is provided. The light-emitting device has a semiconductor light source, a surrounding light-shielding element, and a carrier substrate. The semiconductor light source and the light-shielding element are disposed on the mounting side of the carrier substrate. The semiconductor light source is located in the inner region of the light-shielding element, which is surrounded by the inner side of the light-shielding element. Viewed in cross-section, the light-shielding element has an undercut on its inner side, thereby having a shape that protrudes inward in a direction away from the mounting side of the carrier substrate.

[0007] In the proposed light-emitting device, a light-shielding element is used surrounding a semiconductor light source, which is directly disposed on the mounting side of a carrier substrate together with the semiconductor light source. The semiconductor light source is located in an internal region surrounded by the light-shielding element and its inwardly pointing or towards the semiconductor light source. In cross-section, the light-shielding element has a lateral opening in the form of an undercut on its inner side. In this manner, the light-shielding element has an inwardly projecting cross-sectional shape in the direction away from the mounting side of the carrier substrate, thus protruding towards the semiconductor light source. The direction away from the mounting side of the carrier substrate can refer to the normal relative to the mounting side.

[0008] The shape of the light-shielding element allows light radiation emitted by the semiconductor light source during light emission to be reflected at least partially toward the carrier substrate and without moving away from the light-emitting device. According to the design, absorption can also occur at the light-shielding element. Therefore, the light-shielding element can efficiently suppress scattered light, reliably preventing ghosting.

[0009] Furthermore, the light-shielding element can be positioned approximately at the height of the semiconductor light source. This can be located in the region on the back side of the light-shielding element, which can be mounted on the mounting side of the carrier substrate via this back side. In this manner, the light-emitting device can be characterized by a large or maximum aperture and light-emitting operation with small or minimum light loss. This is applicable compared to other solutions, such as light-shielding plates mounted on a housing or external light-shielding plates used at a height offset from the light source.

[0010] Other possible details and implementation methods are described below, which can be considered for use in light-emitting devices and their components.

[0011] In addition to its lateral inner side facing inward and defining the inner region, the light-shielding element may have a back side and a front side. The back side of the light-shielding element may face the mounting side of the carrier substrate, and the front side of the light-shielding element may face away from the mounting side of the carrier substrate. The light-shielding element can be disposed on the mounting side of the carrier substrate using the back side. Here, the light-shielding element may be fastened to the carrier substrate, for example, via an adhesive. Furthermore, the light-shielding element may have a lateral outer side pointing outward or laterally outward and facing away from the inner region.

[0012] The shape of the light-shielding element can be a closed loop. Here, the light-shielding element can be constructed as a frame having multiple or four adjacent frame segments. The undercut and inwardly projecting cross-sectional shape can exist in a loop shape along the entire inner side of the light-shielding element. The shape protruding inwardly in the direction away from the mounting side of the carrier substrate at the inner side of the light-shielding element can involve the entire or substantially the entire inner side of the light-shielding element when viewed in cross-section. Here, as the distance from the mounting side of the carrier substrate increases, the light-shielding element can gradually protrude inwardly in the region of the undercut.

[0013] The light-shielding element can be laterally spaced from the semiconductor light source. The spacing between the semiconductor light source and the light-shielding element, present on the mounting side of the carrier substrate, can be in the range of millimeters or hundreds of micrometers. The light-shielding element can have a greater thickness than the semiconductor light source, thus extending beyond it. The thickness of the light-shielding element can be, for example, in the range of hundreds of micrometers, and the thickness of the semiconductor light source can be, for example, in the range of ten micrometers or less.

[0014] Unlike dams produced by dispensing, where the contour and shape cannot be well defined, light-shielding elements can be produced in different ways and by different methods. This provides the feasibility of providing light-shielding elements with precisely defined shapes. As will be explained in more detail below, light-shielding elements can be produced, for example, by means of molding processes such as injection molding, and thus can be molded or injection-molded parts. In addition to the defined shape of the light-shielding element, greater flexibility is also provided regarding the materials and surface properties that can be used. This can be used, for example, to suppress specular reflections and to achieve high stability relative to external radiation, such as sunlight.

[0015] The undercut of the light-shielding element can be an open undercut. This means that there is no solid within the undercut or in the region of the undercut.

[0016] In another embodiment, the undercut is formed by bending the inner side of the light-shielding element and / or extending inclined to the mounting side of the carrier substrate. Here, the light-shielding element or its inner side may, for example, have a convex or concave bend. In the case where the inner side extends inclined to the mounting side of the carrier substrate, a corresponding tilt angle may exist between the inner side and the normal of the mounting side. The tilt angle may be in the range of tens of degrees and, for example, thirty degrees. A hybrid form is also possible, wherein the inner side of the light-shielding element may have a bent portion and a portion extending inclined to the mounting side of the carrier substrate.

[0017] In another embodiment, the light-shielding element has a front side facing away from the carrier substrate, which is at least partially inclined to extend outward and descend outward from the mounting side of the carrier substrate. This design prevents the portion of radiation reflected back towards the light-emitting device at the imaging optics from being reflected at the light-shielding element and then emitted again towards the imaging optics in an undefined manner. Alternatively, the inclined front side of the light-shielding element at least partially ensures that the portion of radiation reflected back by the imaging optics is reflected outward at the light-shielding element, thereby deflecting it from the optical path.

[0018] In another embodiment, the light-emitting device has a potting material located outside the inner region surrounded by a light-shielding element and at least adjacent to the outer or lateral outer side of the light-shielding element and adjacent to the mounting side of the carrier substrate. The potting material may also be adjacent to other locations, such as circumferentially adjacent to the carrier substrate and other possible components of the light-emitting device. The potting material can be used to protect bonding wires connected to contact elements of the carrier substrate at the mounting side of the carrier substrate outside the inner region surrounded by the light-shielding element, and can be embedded in the potting material. Here, the light-shielding element can be used as a barrier within the fabrication area of ​​the light-emitting device to prevent the potting material from being introduced into the inner region of the light-shielding element when the potting material is applied or potted. The potting material may be reflective or configured to be white. For this purpose, the potting material may comprise a plastic or silicone material having reflective or scattering particles embedded therein.

[0019] In another embodiment, the light-shielding element has a void on its front side away from the carrier substrate, the void having a stop edge for one or more of the aforementioned potting materials. In this design, the potting material can be applied or potted in such a way that a portion of the front side of the light-shielding element is also covered by the potting material. This can be used to additionally and mechanically fasten the light-shielding element to the carrier substrate. The stop edge allows the potting material to be stopped during application, enabling the light-shielding element to be covered with potting material on the front side in a defined manner. The void and the stop edge can exist in a circumferential form.

[0020] In another embodiment, the light-shielding element has an outward or laterally outwardly extending section on its front side away from the carrier substrate. This section of the light-shielding element also ensures protection of the bonding wires, which can be connected to the contact elements of the carrier substrate on the mounting side, outside the inner region surrounded by the light-shielding element. Here, the bonding wires can be covered and thus protected at least in the region of the contact elements of the carrier substrate by the extending section of the light-shielding element. Encapsulating material into which the bonding wires can be embedded can be additionally provided or omitted. The laterally extending section can be in a wraparound shape. The section can also extend parallel to the mounting side of the carrier substrate.

[0021] The light-shielding element can be manufactured from different materials and produced in various ways, such as as mentioned above, in the form of an injection-molded part. Possible materials for the light-shielding element are plastic materials, such as silicone or polysiloxane, which can be clear or transparent, or, for example, easily diffusely reflective or white, by using embedded reflective or scattering particles. The latter design allows for insensitivity to external radiation, such as sunlight. Other possible materials are silicon, ceramics, glass, and metals. The light-shielding element can be manufactured as a single piece or as a single layer composed of one of the aforementioned materials. Designs composed of multiple materials are also feasible.

[0022] In another embodiment, the light-shielding element has a lower light-shielding section and an upper light-shielding section disposed on the lower light-shielding section. The light-shielding element is disposed on a carrier substrate with the lower light-shielding section. The lower and upper light-shielding sections have different material properties. This multi-layered design provides the feasibility of designing the light-shielding element for different functions or presets. The light-shielding element including the lower and upper light-shielding sections can, for example, be implemented as a two-component injection molded part.

[0023] Regarding the different functions of the lower and upper light-shielding sections, another embodiment proposes that the lower light-shielding section is made of an absorptive or transparent material, while the upper light-shielding section is made of a reflective material. The materials involved can be, for example, plastic materials, such as silicone resin, where a reflective design can be achieved by embedding reflective or scattering particles, and an absorptive design can be achieved by embedding absorptive particles, such as carbon black particles. Due to the reflective upper light-shielding section, the light-shielding element can be insensitive to radiation from the outside, such as sunlight. Light radiation emitted from the semiconductor light source toward the inside of the light-shielding element can also be reflected toward the carrier substrate at the upper light-shielding section. Through the lower light-shielding section, a portion of the light radiation can also be absorbed or coupled into the lower light-shielding section according to the design, thereby being reflected, for example, at the upper light-shielding section or at the potting material adjacent to the light-shielding element. Here, radiation reflection toward the imaging optics can be avoided, thus preventing ghosting.

[0024] In another embodiment, the light-shielding element has a reflective coating on its front side away from the carrier substrate. Here, the light-shielding element may have a substrate on which the reflective coating is disposed on the front side. The reflective coating may be made of a plastic or silicone material with embedded reflective or scattering particles. Due to the reflective coating, the front side of the light-shielding element can be formed or substantially formed by the reflective coating, and the light-shielding element may be insensitive to external radiation such as sunlight.

[0025] In another embodiment, the light-shielding element has an absorbent coating on its inner side. In this design, the light-shielding element may also have a substrate on which the absorbent coating is disposed. The absorbent coating may be made of a plastic or silicone material with embedded absorbent particles or carbon black particles. Here, the inner side of the light-shielding element can be formed or substantially formed by the absorbent coating. The absorbent coating can absorb or substantially absorb light radiation emitted by the semiconductor light source toward the inner side of the light-shielding element. In this manner, ghosting can also be suppressed.

[0026] In addition to the aforementioned components such as the semiconductor light source, the light-shielding element, and the carrier substrate, the light-emitting device may also have other components. In another embodiment, the light-emitting device has a carrier plate on which the carrier substrate is disposed. The carrier plate and the carrier substrate are electrically connected via bonding wires. Here, applying the above-described design, according to the design, the bonding wires are connected to the contact element on the mounting side of the carrier substrate, outside the inner region surrounded by the light-shielding element.

[0027] The carrier plate may have a front side, on which a carrier substrate may be disposed. Furthermore, the carrier plate may have contact elements on the front side, to which bonding wires can be connected. The contact elements on the front side of the carrier plate may be connected to contact elements on the back side of the carrier plate, opposite to the front side. The contact elements on the back side of the carrier plate may be configured as electrical contacts for a light-emitting device. In this manner, the light-emitting device can be powered, and electrical control signals for controlling the operation of the light emission can be applied to the light-emitting device. The carrier plate may be implemented as a circuit board.

[0028] To protect the bonding wires, according to another embodiment, the bonding wires are embedded in the potting material. As described above, the potting material may be located outside the inner region surrounded by the light-shielding element, and here it is at least adjacent to the lateral outer side of the light-shielding element and the mounting side adjacent to the carrier substrate. Furthermore, the potting material may be adjacent to the carrier substrate on the circumferential side and to the support plate or the front side of the support plate.

[0029] In another embodiment, the light-emitting device has a molded body disposed on a carrier plate or on the front side of the carrier plate, the molded body surrounding a carrier substrate, a semiconductor light source, and a light-shielding element. The molded body may extend beyond the components surrounded by the molded body and form a housing protecting the components. In designs of light-emitting devices with potting material, the potting material may particularly be located in the region between the carrier substrate and the molded body.

[0030] The semiconductor light source and the carrier substrate can be electrically connected in a suitable manner, such that the semiconductor light source can be powered or controlled via the carrier substrate during light emission operation. For this purpose, the semiconductor light source and the carrier substrate can have contact elements, which are electrically connected, for example, via solder. The contact elements of the carrier substrate can be located on its mounting side. The contact elements of the semiconductor light source can be back-side contact elements.

[0031] In another embodiment, the carrier substrate is an electronic semiconductor chip for controlling a semiconductor light source. Here, the electronic semiconductor chip may also have electronic circuit components in addition to contact elements on the mounting side. Furthermore, the electronic semiconductor chip can be implemented as an application-specific integrated circuit (ASIC) or as an ASIC chip.

[0032] Semiconductor light sources can be implemented as pixelated light sources with multiple individually operable light-emitting pixels. In this manner, the light-emitting device can be used, for example, in the headlights of an adaptive front-lighting system (AFS) for motor vehicles. Here, by correspondingly manipulating the light-emitting pixels and cooperating with imaging optics, different light distributions can be generated in the illuminated area. High contrast illumination can be achieved due to the suppression of scattered light and ghosting achieved through light-shielding elements. Alternatively, the light-emitting device can be used in another area, for example, in a projector.

[0033] Regarding the pixelated design scheme of the semiconductor light source, another embodiment proposes that the semiconductor light source has a pixelated light-emitting semiconductor chip. This may involve a pixelated LED chip (light-emitting diode). Furthermore, the semiconductor light source may have a conversion layer disposed on the light-emitting semiconductor chip for radiation conversion. During light emission operation, the light-emitting semiconductor chip can generate primary light radiation, which can be partially converted into secondary light radiation by the conversion layer. The primary and secondary light radiation can be blue and yellow light radiation, so that the semiconductor light source can emit white light radiation overall.

[0034] A semiconductor light source configured in a pixelated manner can alternatively be implemented using a device composed of multiple individual light-emitting semiconductor chips, such as LED chips. A common conversion layer for radiation conversion can be provided on the multiple light-emitting semiconductor chips, or separate conversion layers for radiation conversion can be provided.

[0035] Furthermore, the semiconductor light source can be implemented using a non-pixelated light-emitting semiconductor chip or LED chip and optionally using a conversion layer for radiation conversion disposed on the light-emitting semiconductor chip or LED chip.

[0036] According to another aspect of the invention, a method for manufacturing a light-emitting device is provided. The method includes providing a carrier substrate, providing a semiconductor light source on a mounting side of the carrier substrate, and providing a surrounding light-shielding element on the mounting side of the carrier substrate. The semiconductor light source and the light-shielding element are provided such that the semiconductor light source is located in an inner region of the light-shielding element, said inner region being surrounded by the inner side of the light-shielding element. Viewed in cross-section, the light-shielding element has an undercut on its inner side, thus having a shape that protrudes inwardly in a direction away from the mounting side of the carrier substrate.

[0037] This method provides the feasibility of reliably manufacturing the aforementioned light-emitting device or one or more of the aforementioned design schemes of the light-emitting device. The foregoing features and details can be applied in a corresponding manner with respect to the manufacturing method. For example, the light-emitting device manufactured by this method is characterized by efficient suppression of scattered light and ghosting-free light-emitting operation. This is because, through the undercut of the light-shielding element, light radiation emitted by the semiconductor light source toward the light-shielding element during light-emitting operation is not reflected away from the light-emitting device at the light-shielding element.

[0038] In one embodiment of the method, providing the light-shielding element includes separately producing the light-shielding element and subsequently disposing it on a carrier substrate. This allows for the reliable provision of a light-shielding element with a precisely defined shape. Furthermore, the light-shielding element can be manufactured from various materials. As mentioned above, the materials can include plastic materials such as silicone resins or polysiloxanes, silicon, ceramics, glass, and metals. In designs made of one or more plastic materials, the light-shielding element can be produced, for example, by a molding process, such as injection molding or two-component injection molding. Disposing the separately produced light-shielding element on the carrier substrate can be performed by bonding or using an adhesive.

[0039] Alternatively, other processes can be applied to provide the light-shielding element. In another embodiment, providing the light-shielding element includes forming the light-shielding element on a carrier substrate by performing a 3D printing process. In the process performed using a 3D printer, the light-shielding element can be manufactured from a plastic material. Furthermore, the manufactured light-shielding element can be directly disposed on the mounting side of the carrier substrate.

[0040] In another embodiment, providing the light-shielding element includes providing a contoured, strip-shaped initial body and disposing the initial body on a carrier substrate. The strip-shaped initial body can be produced from a flexible plastic material. Disposing the strip-shaped initial body on the carrier substrate to form the light-shielding element can be achieved by bonding or using an adhesive.

[0041] In another embodiment, providing a light-shielding element involves applying a paste-like raw material onto a carrier substrate using a template. The template has a recess for pre-setting the cross-sectional shape of the light-shielding element. The paste-like raw material can be, for example, a silicone resin material. In this design, the manufactured light-shielding element can also be directly disposed on the mounting side of the carrier substrate.

[0042] As described above, the semiconductor light source can have a light-emitting semiconductor chip or a pixelated light-emitting semiconductor chip. The light-emitting semiconductor chip can be mounted on a carrier substrate by soldering. Furthermore, a conversion layer for radiation conversion can be provided on the light-emitting semiconductor chip. The conversion layer can be generated, for example, by spray coating.

[0043] The manufacturing method may include additional steps. Another feasible step is to place the carrier substrate on a carrier plate. This can be achieved by bonding or using an adhesive. Furthermore, it is possible to construct a molded body on the carrier plate having a shape that encloses a region. In this region, the carrier substrate can be placed on the carrier plate. Another feasible step is to perform a wire bonding process to electrically connect the contact elements of the carrier substrate and the carrier plate via wire bonding, and to apply or encapsulate a potting material. Here, a light-shielding element can be used as a barrier to prevent the potting material from being introduced into the internal region enclosed by the light-shielding element. The potting material can be a plastic or silicone material with embedded reflective or scattering particles.

[0044] Here, depending on the design, the manufacturing steps can be performed in different sequences. For example, it is feasible to form a molded body on a carrier plate, then place a carrier substrate with a semiconductor light source or light-emitting semiconductor chip already disposed on the carrier plate, then perform a bonding wire process and provide a light-shielding element on the carrier substrate (e.g., by providing a separately generated light-shielding element), and then apply a potting material. The carrier substrate may also have the light-shielding element disposed on the carrier plate before being placed on the carrier plate. Forming a conversion layer by spraying a coating layer can be performed after the carrier substrate with the light-emitting semiconductor chip is disposed on the carrier plate.

[0045] Furthermore, this method can be implemented to manufacture multiple light-emitting devices jointly or compositely. Here, the carrier plate can have dimensions for multiple light-emitting devices, and the molded body can form multiple regions surrounded by the molded body, each of which a carrier substrate equipped with a semiconductor light source or light-emitting semiconductor chip (and optional light-shielding elements) can be disposed on the carrier plate. By further steps, such as wire bonding processes (e.g., by providing individually generated light-shielding elements) on each carrier substrate (unless previously not occurring), and by applying potting material, a device consisting of light-emitting devices connected to each other can be produced. The composite can then be divided into individual light-emitting devices by cutting the molded body and the carrier plate.

[0046] In this method, a composite consisting of a carrier substrate can also be provided. In manufacturing the light-emitting device, where the carrier substrate is an electronic semiconductor chip for controlling the semiconductor light source, the composite can be a wafer composed of multiple interconnected electronic semiconductor chips. Multiple light-emitting semiconductor chips can be mounted on the composite or the wafer. Subsequently, dicing can be performed to provide multiple carrier substrates or electronic semiconductor chips equipped with light-emitting semiconductor chips.

[0047] In this context, it is also feasible to provide multiple light-shielding elements on a composite consisting of a carrier substrate or a wafer consisting of electronic semiconductor chips (e.g., by means of 3D printing). This can be done before or after mounting the light-emitting semiconductor chips. In this manner, multiple carrier substrates or electronic semiconductor chips, each additionally equipped with light-shielding elements, can be provided by slicing.

[0048] The advantageous embodiments and improvements of the invention set forth above and / or repeated in the dependent claims may be applied individually, except, for example, where the dependency is explicit or the alternatives are incompatible, or, however, may be applied in any combination thereof. Attached Figure Description

[0049] The above-described features, characteristics, and advantages of the present invention, as well as the ways and methods of achieving these features, characteristics, and advantages, become clearer and more readily understood in conjunction with the following description of the embodiments, which are illustrated in detail with reference to the illustrative drawings. The drawings show:

[0050] Figure 1 and Figure 2 The diagram shows a side view and a top view of a light-emitting device, which includes a carrier plate, a molded body, an electronic semiconductor chip, a semiconductor light source, a light-shielding element, and a potting material, wherein the light-shielding element has an inner side that extends inclined to the mounting side of the electronic semiconductor chip, thereby having an undercut at the inner side.

[0051] Figure 3 A partial side view of the light-emitting device is shown;

[0052] Figure 4 A diagram showing an illumination device including a light-emitting device and an imaging optics device;

[0053] Figure 5 A partial side view of a light-emitting device in operation is shown, illustrating light emission and reflection at a light-shielding element;

[0054] Figure 6 A partial side view of another light-emitting device in operation is shown, which has a dam instead of a light-shielding element;

[0055] Figure 7 A partial side view of a light-emitting device is shown, illustrating the structure of a semiconductor light source;

[0056] Figure 8 A partial side view of a light-emitting device in one design is shown, in which a light-shielding element has a front side that extends at an angle to the mounting side of an electronic semiconductor chip;

[0057] Figure 9A partial side view of a light-emitting device in one design embodiment is shown, in which the light-shielding element has an outwardly extending section;

[0058] Figures 10 to 12 A partial side view of a light-emitting device in some design schemes is shown, in which the light-shielding element has a front opening with a stop edge for potting material;

[0059] Figure 13 and Figure 14 A partial side view of a light-emitting device in some design schemes is shown, in which the light-shielding element is curved on the inside;

[0060] Figure 15 A partial side view of a light-emitting device is shown in a design in which a light-shielding element is curved on the inside and extends towards the mounting side of an electronic semiconductor chip.

[0061] Figure 16 A partial side view of a light-emitting device in one design embodiment is shown, in which the light-shielding element has lower and upper light-shielding sections;

[0062] Figure 17 A partial side view of a light-emitting device in one design embodiment is shown, in which the light-shielding element has a covering on the inner and front sides;

[0063] Figures 18 to 23 The steps for manufacturing a light-emitting device are shown in the side and top views, wherein separately generated light-shielding elements are disposed on an electronic semiconductor chip;

[0064] Figure 24 This demonstrates how light-shielding elements are produced by performing a 3D printing process;

[0065] Figure 25 This illustrates the production of a light-shielding element by setting a strip-shaped initial body; and

[0066] Figure 26 This demonstrates how to create a light-shielding element by applying a paste-like raw material using a template. Detailed Implementation

[0067] The design of the light-emitting device 100 and its associated manufacturing method is described based on schematic diagrams. The light-emitting device 100 has an integrated light-shielding element 130 extending around a semiconductor light source 110. It should be noted that the schematic diagrams may not be to scale. Therefore, the parts, elements, and structures shown in the drawings may be shown exaggeratedly or reduced in scale. Furthermore, it should be noted that features and details mentioned with respect to one design may also apply to other design aspects, and multiple design aspects and their features may be combined with each other. Consistent features may be described in detail only with respect to one design aspect. The drawings include side sectional views and top views. The top view shows the section lines of the plane relating to the sectional views.

[0068] Figure 1 and Figure 2 A side sectional view and a top view of a light-emitting device 100 according to a feasible design are shown. The light-emitting device 100 has a semiconductor light source 110 for generating light radiation 210 (see [reference]). Figure 4 and Figure 5 The semiconductor light source 110 and an electronic semiconductor chip 120 for controlling the operation of the semiconductor light source 110. The electronic semiconductor chip 120 has electronic circuit components (not shown) for this purpose. The electronic semiconductor chip can be implemented as an application-specific integrated circuit (ASIC). The electronic semiconductor chip 120 also serves as a carrier substrate for the semiconductor light source 110. The semiconductor light source 110 is disposed on the front side of the electronic semiconductor chip 120, which is referred to hereinafter as the mounting side 121. The semiconductor light source 110 or its light-emitting semiconductor chip 115 (see...) Figure 7 The semiconductor light source 110 is mechanically and electrically connected to the electronic semiconductor chip 120. A device consisting of two semiconductor chips 115 and 120 can also be called a System-on-Chip (SoC). The semiconductor light source 110 is a pixelated light source, having multiple individually controllable light-emitting pixels 111 arranged side-by-side. The design scheme in... Figure 2 As shown in the top view, the semiconductor light source 110 is constructed to be relatively flat, and thus can also be referred to as the light-emitting surface.

[0069] exist Figure 1 and Figure 2Another component of the light-emitting device 100 shown is a surrounding light-shielding element 130, also disposed directly on the mounting side 121 of the electronic semiconductor chip 120. The light-shielding element 130 can be fastened to the electronic semiconductor chip 120, for example, via an adhesive (not shown). The light-shielding element 130 surrounds an inner region 137 in which the semiconductor light source 110 is spaced apart from the light-shielding element 130. The inner region 137 is laterally inwardly directed by the light-shielding element 130 and faces the inner side 132 surrounding the semiconductor light source 110 (see [link to documentation]). Figure 3 The light-shielding element 130 has a lateral clearance in the form of an undercut 135 on its inner side. The thickness of the light-shielding element 130 is greater than the thickness of the semiconductor light source 110, such that the light-shielding element 130 extends beyond the semiconductor light source 110. Viewed in top view, the light-shielding element 130 has a closed, surrounding frame shape, said frame shape having four frame segments adjacent to each other at right angles. Figure 2 The exemplary design shown has a semiconductor light source 110 and a frame-shaped light-shielding element 130 with a rectangular, non-square outline.

[0070] The light-shielding element 130 can be made of different materials. For example, a design made of plastic materials such as silicone or polysiloxane is conceivable. This material can be clear or transparent, or include embedded reflective or scattering particles (not shown), thus being easily diffuse or having a white color. With a reflective or white design, the light-shielding element 130 can be insensitive to external radiation, such as sunlight. In a design made of plastic materials, the light-shielding element 130 can be produced, for example, by a molding process, such as injection molding, thus being a molded part or an injection-molded part. Furthermore, the light-shielding element 130 can be made of other materials. These may include silicon, ceramic materials, glass materials, and metallic materials. Considering the crystal structure of silicon, a design of a light-shielding element 130 made of silicon is implemented such that the light-shielding element 130 has sufficient mechanical stability. The light-shielding element 130 can be manufactured in one piece or as a single layer from one of the aforementioned materials. A design made of multiple materials is also feasible. The following describes... Figure 16 and Figure 17 Further examples will be provided to illustrate this.

[0071] like Figure 1 As shown, the light-emitting device 100 also includes a carrier plate 150 that carries an electronic semiconductor chip 120. The electronic semiconductor chip 120 is disposed on the front side of the carrier plate 150 with its back side opposite to the mounting side 121. The carrier plate 150 may be implemented in the form of a printed circuit board (PCB).

[0072] In addition to an electrically insulating material or circuit board material such as FR4 (flame retardant), the carrier plate 150 has an electrical contact structure 151 made of a conductive or metallic material. The contact structure 151 includes a contact element 156 on the front side of the carrier plate 150 and a contact element 157 on the back side of the carrier plate 150 opposite to the front side. The back-side contact element 157 contacts the light-emitting device 100 to supply power to the light-emitting device 100, i.e., the electronic semiconductor chip 120, and to supply power to the semiconductor light source 110 via the electronic semiconductor chip, and to transmit electrical control signals for controlling the operation of the light emission to the light-emitting device 100 or the electronic semiconductor chip 120. The front and back-side contact elements 156 and 157 are connected to each other via a through contact portion extending through the carrier plate 150.

[0073] The electrical contact structure 151 of the carrier plate 150 is further electrically connected to the electronic semiconductor chip 120 via bonding wire 160. Here, the bonding wire 160 is connected to the contact element 156 on the front side of the carrier plate 150 (see...). Figure 1 And it is connected to the contact element 126 of the electronic semiconductor chip 120 at the mounting side 121 of the electronic semiconductor chip (see...). Figure 3 The contact element 126 of the electronic semiconductor chip 120 is located outside the inner region 137 surrounded by the light-shielding element 130 and is on the side or outside of the light-shielding element 130. (As in...) Figure 2 As shown in the document, the bonding wire 160 can be electrically connected to the electronic semiconductor chip 120 over the entire circumference of the electronic semiconductor chip 120.

[0074] like Figure 1 As shown, the carrier plate 150 is additionally equipped with a heat dissipation structure 159 for the electronic semiconductor chip 120. The heat dissipation structure 159, which may be made of the same metal material as the contact structure 151, has planar contact elements on both the front and back sides of the carrier plate 150, wherein the related contact elements are connected to each other via through contact portions. The electronic semiconductor chip 120 is disposed on the contact elements on the front side of the heat dissipation structure 159 with its back side facing out. Here, the electronic semiconductor chip 120 can be fastened to the heat dissipation structure 159 by an adhesive (not shown).

[0075] exist Figure 1 and Figure 2The light-emitting device 100 shown also has a molded body 170 disposed on the front side of the support plate 150. The molded body 170, made of plastic material, serves as the housing of the light-emitting device 100. The molded body 170 surrounds an area in which an electronic semiconductor chip 120, a semiconductor light source 110, a light-shielding member 130, and a bonding wire 160 are disposed. The molded body 170 is configured to have a thickness such that the molded body 170 extends beyond the aforementioned members 110, 120, 130, and 160.

[0076] Furthermore, the light-emitting device 100 has a potting material 180. This is used for mechanical protection of the bonding wires 160, thus the bonding wires are embedded in the potting material 180. The potting material 180 fills the surrounding area, which, in a top view, is bounded on one side by the molded body 170 and on the other side by the electronic semiconductor chip 120 and the light-shielding element 130. The inner region 137 surrounded by the light-shielding element 130 does not have the potting material 180. The potting material 180 is adjacent to the lateral outer side 133 of the surrounding area of ​​the light-shielding element 130 (see...). Figure 3 The encapsulating material 180 is located on the mounting side 121 adjacent to the electronic semiconductor chip 120 and on the lateral circumference adjacent to the electronic semiconductor chip 120. Furthermore, the encapsulating material 180 is adjacent to the front side of the carrier plate 150 and to the inner side of the molded body 170. Viewed in top view, the electronic semiconductor chip 120 is covered by the encapsulating material 180 on the outer side of the light-shielding element 130 and on the bonding lines 160. Figure 2 In the top view, the given situation is considered in such a way that the outer contour of the electronic semiconductor chip 120 and the bonding line 160 are shown in dashed lines.

[0077] The potting material 180, also referred to as an embedded material or encapsulation material, may be reflectively configured or configured to be white. For this purpose, the potting material 180 may be a plastic or silicone material with embedded reflective or scattering particles (not shown). During the manufacture of the light-emitting device 100, the potting material 180, existing in a flowable form, is applied. During this process, the light-shielding element 130 acts as a barrier, preventing the potting material 180 from being introduced into the internal region 137 surrounded by the light-shielding element 130. The application may be accompanied by completely wetting the lateral outer side 133 of the light-shielding element 130 and the inner side of the molded body 170 with the help of the potting material 180, such that the potting material 180 can be applied to the front surface, as shown in… Figure 1 As shown in the diagram, it has a convex curve.

[0078] Figure 3 A magnified partial side cross-sectional view of the light-emitting device 100 is shown, which clarifies other details. Figure 3 In the middle, from the frame-shaped light-shielding element 130 (see Figure 2 The diagram shows one of the four frame segments in cross-section. The diagram here refers to all frame segments of the light-shielding element 130. For orientation, in Figure 3 The horizontal direction 201 and the vertical direction 202 are further shown by arrows. The horizontal direction 201 extends parallel to the mounting side 121 of the electronic semiconductor chip 120, and the vertical direction 202 extends perpendicular to it. Therefore, the vertical direction 202 corresponds to the normal of the mounting side 121. The surrounding lateral inner side 132 of the light-shielding element 130 extends obliquely to the mounting side 121 of the electronic semiconductor chip 120 in cross-section. For this reason, in Figure 3 The image shows the tilt angle 243 between the inner side 132 and the normal (vertical direction 202) of the mounting side 121. The tilt angle 243 can be in the range of tens of degrees, for example, 30°.

[0079] Based on the aforementioned design, the light-shielding element 130 has an undercut portion 135 located on its inner side 132. Therefore, the light-shielding element 130 has a cross-sectional shape that protrudes laterally inward (in the lateral direction 201) in the direction away from the mounting side 121 of the electronic semiconductor chip 120 (vertical direction 202). In the region of the undercut portion 135, the further inward the light-shielding element 130 protrudes, the greater the distance from the mounting side 121 of the electronic semiconductor chip 120. The inwardly protruding shape and the undercut portion 135 exist in a circumferential form along the entire surrounding light-shielding element 130. The undercut portion 135 is open, or rather, in an open state, and no solid is present in the region of the undercut portion.

[0080] like Figure 3 As further shown in the diagram, in cross-section, the laterally outward-pointing outer side 133 of the light-shielding element 130 extends perpendicularly (in the vertical direction 202) to the mounting side 121 of the electronic semiconductor chip 120. The light-shielding element 130 also has a surrounding front side 131 extending parallel to and away from the mounting side 121. The light-shielding element 130 is positioned on the mounting side 121 of the electronic semiconductor chip 120 by means of a surrounding back side opposite to the front side 131 and facing the electronic semiconductor chip 120. Here, the light-shielding element 130 can be fastened to the mounting side 121, for example, via an adhesive not shown. The frame shape of the light-shielding element 130 (see...) Figure 2 As a result, the inner side 132 and the remaining sides (front side 131, outer side 133, and back side) of the light-shielding element 130 are each composed of multiple or four parts.

[0081] A light-shielding element 130 and a semiconductor light source 110 laterally surrounded by the light-shielding element 130 are disposed on the mounting side 121 of the electronic semiconductor chip 120, spaced apart from each other. Therefore, in Figure 3The diagram shows the spacing 241 between the components located at the mounting side 121. The spacing 241, which exists along the entire circumference of the semiconductor light source 110, can be in the range of millimeters or in the range of several hundred micrometers. Figure 3 Furthermore, the vertical thickness 242 of the light-shielding element 130 is shown, which can be in the range of several hundred micrometers. In contrast, the semiconductor light source 110 has a much smaller thickness, which can be in the range of ten micrometers or less.

[0082] To illustrate possible application scenarios, Figure 4 The image shows an illumination device 250. The illumination device includes a light-emitting device 100 and an imaging optical device 251 disposed downstream of the light-emitting device 100. During light emission operation, light radiation 210 can be generated by the semiconductor light source 110 of the light-emitting device 100 and emitted toward the imaging optical device 251. Through the imaging optical device 251, the light radiation 210 from the light-emitting device 100 can be shaped and optically imaged onto an illumination plane 255 with a spacing from the imaging optical device 251. Thus, a target area, referred to as the illumination area 256, can be illuminated in the illumination plane 255. A pixelated design of the semiconductor light source 110 having multiple individually operable light-emitting pixels 111 is shown (see...). Figure 2 This provides the following feasibility: by selectively manipulating single, multiple, or all pixels 111, different light distributions can be generated in the illuminated area 256.

[0083] exist Figure 4 The lighting device 250 depicted can be, for example, an adaptive front-lighting system (AFS) used in the automotive field. In this design, the light radiation 210 emitted by the semiconductor light source 110 can be white light radiation, and the illuminated area 256 can be the area in front of the vehicle. The imaging optics 251 can correspond to... Figure 4 The illustration shows a lens. Other designs, such as a reflector or a design with multiple of the above components (not shown), are also possible.

[0084] Figure 5 This shows a partial view of the light-emitting device 100 during light-emitting operation. Figure 3 The corresponding side cross-sectional view. The light radiation 210 generated by the semiconductor light source 110 can be emitted from the semiconductor light source 110 at different radiation angles in the vertical direction 202 and in other directions, such as in... Figure 5 As indicated by the arrow. Figure 5Further illustrating that a portion of the light radiation 210 can be emitted toward the light-shielding element 130. Due to the laterally inwardly projecting cross-sectional shape of the light-shielding element 130, which has an undercut 135 at its inner side 132, the portion of radiation at the inner side 132 of the light-shielding element 130 can be at least partially reflected toward the electronic semiconductor chip 120. This is in Figure 5 The image is indicated by the dashed arrow. This method prevents ghosting.

[0085] This kind of ghosting can be seen in Figure 6 In another light-emitting device shown in cross-section, the light-emitting device, instead of the light-shielding element 130, has a dam 190 surrounding the semiconductor light source 110 and formed by dispensing. The dam 190 may, by manufacturing determination, have a difficult-to-define and additionally convex cross-sectional profile. In this design, light radiation 210 emitted by the semiconductor light source 110 and also directed towards the dam 190 can be reflected away from the associated light-emitting device by reflection at the dam 190, as in... Figure 6 As indicated by the dashed arrow. The portion of radiation reflected at dam 190 can radiate towards the imaging optics located downstream and be projected by the imaging optics onto unlocated positions in the illuminated area, resulting in unwanted ghosting (not shown).

[0086] On the contrary, according to Figures 1 to 5 In the described light-emitting device 100, since the undercut portion 135 of the light-shielding element 130 can prevent light radiation 210 emitted toward the light-shielding element 130 from being reflected away from the light-emitting device 100 at the light-shielding element 130, thereby reaching the imaging optical device 251 (see [link]). Figure 4 And optical imaging can be performed by the imaging optics. Therefore, the light-emitting device 100 is characterized by efficiently suppressing scattered light, which enables the illumination area 256 to be illuminated with high contrast.

[0087] Another advantage of the light-emitting device 100 is that the light-shielding element 130 is located at the height of the semiconductor light source 110 in the region on its back side (see, for example, see...). Figure 3 Therefore, the light-emitting device 100 can have a relatively large aperture, and it is feasible to operate with relatively low light loss. This advantage is applicable compared to a device (not shown) with a light-shielding plate offset from the height of the light source. Such a light-shielding plate in the optical path can avoid ghosting; however, this incurs costs associated with the aperture and results in light loss. In the light-emitting device 100 with the light-shielding element 130, such a light-shielding plate is neither necessary nor provided.

[0088] Figure 7A partial side cross-sectional view of the light-emitting device 100 is shown, according to which the structure of the semiconductor light source 110 becomes clear. The semiconductor light source 110 has pixelated light-emitting semiconductor chips 115 mounted on the mounting side 121 of an electronic semiconductor chip 120. The semiconductor chip 115, which may be a pixelated LED chip (light-emitting diode), has a back-side contact element 116. The electronic semiconductor chip 127 has a corresponding contact element 127 at the mounting side 121 for this purpose. The contact elements 116 and 127 of the semiconductor chips 115 and 120 are electrically and mechanically connected to each other, for example, via solder (not shown). In this manner, the light-emitting semiconductor chip 115 can be electrically controlled via the electronic semiconductor chip 120.

[0089] Furthermore, the semiconductor light source 110 has a conversion layer 118 for radiation conversion disposed on the light-emitting semiconductor chip 115. The conversion layer 118 can be produced by spray coating, thereby achieving the desired effect. Figure 7 As shown, a light-emitting semiconductor chip 115 is covered on the front side and around the periphery, and also partially covers an electronic semiconductor chip 120 or its mounting side 121 on the side of the light-emitting semiconductor chip 115. During light emission operation, the light-emitting semiconductor chip 115 can generate primary light radiation, which can be partially converted into secondary light radiation (not shown) by a conversion layer 118. The primary and secondary light radiation can be blue and yellow light radiation, so that overall, white light radiation 210 can be emitted by the semiconductor light source 110 (see Figure 110). Figure 5 ).

[0090] exist Figure 2 The design of the semiconductor light source 110 with light-emitting pixels 111 shown can be implemented as follows: The light-emitting semiconductor chip 115 may have a semiconductor layer sequence having side-by-side, individually operable light-emitting regions (not shown), which are configured to generate primary light radiation. The light-emitting pixels 111 may be formed through the light-emitting regions of the semiconductor layer sequence and the regions of the conversion layer 118 that are transmitted by the respective light-emitting regions during operation.

[0091] Other feasible design options are described below, which can be considered for use in the light-emitting device 100. Consistent features and details, as well as identical and functionally identical components, will not be elaborated upon further below. Details in this regard are substituted here with reference to the above description. The light-emitting device 110 also here has corresponding... Figure 1 and Figure 2 The component is constructed in a way that includes a variation of a light-shielding element 130 that surrounds the semiconductor light source 110 and has an undercut 135 on its inner side.

[0092] Figure 8This diagram shows a partial view of a light-emitting device 100 in operation according to a design scheme. Figure 3 The side cross-sectional view shows that the front side 131 of the light-shielding element 130 extends laterally outward from the mounting side 121 of the electronic semiconductor chip 120 in the cross-section (lateral direction 201). Figure 8 (The direction of the arrow shown is opposite to the direction of the middle) decreases. In the case where the light radiation 210 generated by the semiconductor light source 110 is reflected back at the imaging optics 251 (see...) Figure 4 The design scheme suppresses the reflection of the radiation component at the light-shielding element 130, thereby redirecting it back toward the imaging optics 251 in an undefined manner. Instead, the inclined front side 231 of the light-shielding element 130 causes the radiation component reflected back from the imaging optics 251 to be reflected outwards at the front side 131, thus deflecting it outwards from the optical path. This operation... Figure 8 The description is based on the back-reflected light radiation 211 indicated by the dashed arrow.

[0093] exist Figure 8 The light-shielding element 130 for the frame shape is shown in cross-section (see also...). Figure 2 The design scheme of the frame segments involves all frame segments of the light-shielding element 130. This applies in a corresponding manner to the design scheme described below with reference to other figures.

[0094] Figure 9 The diagram shows a partial side cross-sectional view of a light-emitting device 100 in one design embodiment, in which the light-shielding element 130 has a laterally outward (lateral direction 201) shape at the front side 131. Figure 9 The segment 141 extends out (opposite to the direction of the arrow shown). Extending parallel to the mounting side 121 of the electronic semiconductor chip 120, the segment 141 forms a portion or main portion of the front side 131 of the light-shielding element 130, and exists in a circumferential form along the entire circumference of the light-shielding element 130. The segment 141 covers the bonding wire 160 at least in the region where the bonding wire 160 connects to the contact element 126 of the electronic semiconductor chip 120. According to... Figure 9 In the design shown, section 141 also protrudes laterally relative to the electronic semiconductor chip 120. In this manner, the light-shielding element 130 can provide mechanical protection for the bonding wire 160 in the area. This allows for the alternative implementation of the light-emitting device 100 without the potting material 180, as in... Figure 9 The dotted line indicates this. If potting material 180 is provided, then the potting material, as in... Figure 9As shown, it is adjacent to the light-shielding element 130 on the outside and adjacent to the section 141 thereon, and fills the intermediate space that is limited by the light-shielding element 130 and its section 141 and by the mounting side 121 of the electronic semiconductor chip 120.

[0095] Figure 10 The diagram shows a partial side cross-sectional view of a light-emitting device 100 in one design embodiment, in which a light-shielding element 130 has a stepped opening 142 at its front side 131, the opening having a stop edge 145 for potting material 180. The stepped opening 142 is formed by a plurality of adjacent surfaces of the light-shielding element 130 extending parallel to and perpendicular to the mounting side 121 of the electronic semiconductor chip 120. The stop edge 145 is formed by the adjacent surfaces of the front side 131 of the light-shielding element 130 and the opening 142 extending parallel to and perpendicular to the mounting side 121. The opening 142 and the stop edge 145 exist in a circumferential form along the entire surrounding light-shielding element 130. Due to the stop edge 145, potting material 180 can be applied, such that the potting material 180, as... Figure 10 As shown, the light-shielding element 130 is additionally covered at its edge by its front side 131. This provides a reinforced secure fastening of the light-shielding element 130 onto the electronic semiconductor chip 120. The potting material 180 can be stopped during application by the stop edge 145, allowing the light-shielding element 130 to be provided with potting material 180 on its front side in a defined manner without the risk of introducing potting material 180 into the internal region 137.

[0096] Figure 11 A partial side cross-sectional view of the light-emitting device 100 is shown, wherein the light-shielding element 130 also has a front opening 142, the opening having a stop edge 145 for the potting material 180. Figure 11 The empty section 142 shown in the figure and Figure 10 Compared to a surface that does not have a stepped shape but only extends parallel to the mounting side 121 of the electronic semiconductor chip 120 and has a vertically extending surface and an inclined and partially curved surface adjacent to said surface, the stop edge 145 formed by the mutually adjacent surfaces of the front side 131 and the recess 142 that extend parallel and perpendicular to the mounting side 121 can also cause a defined stop when the potting material 180 is applied in the design, so that the light-shielding element 130 can be additionally placed at the edge of the front side 131, as in Figure 11 As shown, it is covered with potting material 180.

[0097] Figure 12 A partial side cross-sectional view of a light-emitting device 100 in one design embodiment is shown. Figure 8 and Figure 11 The design scheme is a combination of the two. Here, the light-shielding element 130 has a front opening 142, which has a stop edge 145 for the potting material 180, and furthermore, a portion of the front side 131, that is, the portion 147 of the front side 131 adjacent to the inner side 132, is inclined to the mounting side 121 of the electronic semiconductor chip 120 and laterally outward (lateral direction 201, in Figure 12 It is formed by descending (in the opposite direction to the arrow shown). In this manner, in the design scheme, corresponding to... Figure 8 The imaging optical device 251 (see Figure 4 The portion of radiation reflected back can also be reflected outward at least partially at the light-shielding element 130 and deflected from the light path (in Figure 12 (Not shown in the image).

[0098] Regarding the undercut 135 on the inner side and the transverse inner side 132 of the light-shielding element 130, other designs are conceivable, unlike the design that extends inclined to the mounting side 121 of the electronic semiconductor chip 120.

[0099] For illustration purposes, Figure 13 A partial side cross-sectional view of the light-emitting device 100 is shown, wherein the light-shielding element 130 has a convexly curved inner side 132. Figure 14 A contrasting design of the light-emitting device 100 is shown in a side cross-sectional view, in which the light-shielding element 130 has a concave, curved inner side 132. A hybrid form is also possible, in which the inner side 132 of the light-shielding element 130 is not only curved but also extended and inclined towards the mounting side 121 of the electronic semiconductor chip 120. An exemplary design of this possibility is shown in... Figure 15 The light-emitting device 100 is shown in a side cross-sectional view. Here, the inner side 132 of the light-shielding element 130 has a portion extending inclined towards the mounting side 121 adjacent to the front side 131, and has a concave curved portion adjacent to the back side. Besides Figure 15 In addition, other designs, not shown, with the light-shielding element 130 curved and extending inwardly to the inner side 132 of the mounting side 121 are feasible.

[0100] exist Figures 13 to 15In the design scheme depicted (and other conceivable designs not shown), the light-shielding element 130 has a cross-sectional shape that protrudes laterally inward (in the lateral direction 201) in the direction (vertical direction 202) away from the mounting side 121 of the electronic semiconductor chip 120, due to the inner undercut 135. This design scheme also provides the feasibility of suppressing the radiation reflection of light radiation 210 generated by the semiconductor light source 110 and emitted toward the light-shielding element 130 at the light-shielding element 130, so that the light radiation 210 radiates from the light-emitting device 100 toward the imaging optics 251 and exhibits ghosting. Alternatively, the light radiation 210 can be located at the inner side 132 with... Figure 5 The corresponding manner is at least partially reflected toward the electronic semiconductor chip 120 (not shown).

[0101] As described above, the light-shielding element 130 can be constructed from a single piece of material such as plastic. Furthermore, as explained below, designs constructed from a variety of different materials are also feasible.

[0102] Figure 16 The diagram shows a partial side cross-sectional view of a light-emitting device 100 in one design, in which a surrounding or frame-like light-shielding element 130 has a surrounding lower light-shielding section 230 and a surrounding upper light-shielding section 231 disposed on the lower light-shielding section 230. The lower light-shielding section 230 forms a portion facing the back of the electronic semiconductor chip 120 and forms one portion each of the transverse inner and outer sides 132, 133 of the light-shielding element 130. The upper light-shielding section 231 forms another portion facing away from the front side 131 of the electronic semiconductor chip 120 and the transverse inner and outer sides 132, 133 of the light-shielding element 130. The inner side 132 here corresponds to... Figure 13 This forms a convex curved section. Alternatively, other design options can be applied to the inner side 132, such as... Figure 3 , Figure 14 and Figure 15 The design scheme shown is not shown.

[0103] exist Figure 16In the light-shielding element 130 depicted, the lower and upper light-shielding sections 230 and 231 have different material properties. The upper light-shielding section 231 is made of a reflective material. The reflective material, for example, being white, can be a plastic material, such as silicone, which has embedded reflective or scattering particles (not shown). Thus, the light-shielding element 130 can be insensitive to external radiation, such as sunlight. The lower light-shielding section 230 is made of a transparent or absorbent material. Again, plastic materials, such as silicone, can be involved, which, for an absorbent design, can additionally have embedded absorbent particles, such as carbon black particles (not shown). The light-shielding element 130 having two light-shielding sections 230 and 231 can be produced by two-component injection molding, thus being a two-component injection molded part.

[0104] During light emission, a portion of the light radiation 210 generated by the semiconductor light source 110 and emitted toward the light-shielding element 130 can be reflected toward the electronic semiconductor chip 120 at the upper light-shielding section 231. According to the design, a portion of the light radiation 210 can be absorbed at the lower light-shielding section 230, or can be coupled into the lower light-shielding section 230, thereby being reflected at the upper light-shielding section 231 or the potting material 180. Only a smaller fraction of the radiation can be reflected toward the electronic semiconductor chip 120 at the lower light-shielding section 230 (not shown). In this design, radiation reflection toward the imaging optics 251 at the light-shielding element 130 can also be avoided (see...). Figure 4 This avoids ghosting.

[0105] Figure 17 The diagram shows a partial side cross-sectional view of a light-emitting device 100 in one design embodiment, in which a light-shielding element 130 has a surrounding or frame-like substrate 233 and two coatings 234, 235 formed on the substrate 233, namely a reflective coating 234 on the front side and an absorptive coating 235 on the inner side. The shape of the light-shielding element 130 is predetermined by the substrate 233. Therefore, corresponding to the light-shielding element 130, the substrate 233 has a cross-sectional shape that protrudes laterally inward (in the lateral direction 201) in the direction (vertical direction 202) away from the mounting side 121 of the electronic semiconductor chip 120. The substrate 233 may be made of a plastic material or another material selected from the above.

[0106] The reflective coating 233 forming the front side 131 of the light-shielding element 130 can be made of a plastic or silicone material with embedded reflective or scattering particles (not shown). Due to the reflective coating 234, the light-shielding element 130 can be insensitive to external radiation, such as sunlight. The absorptive coating 235 forming the transverse inner side 132 of the light-shielding element 130 can be made of a plastic or silicone material with embedded absorptive particles, such as carbon black particles (not shown). During light emission operation, the light radiation 210 generated by the semiconductor light source 110 and emitted toward the light-shielding element 130 can be substantially absorbed at the absorptive coating 235, and only a smaller fraction of the radiation can be reflected toward the electronic semiconductor chip 120 (not shown). This design also prevents radiation reflection toward the imaging optics 251 at the light-shielding element 130 (see [link to designation]). Figure 4 This prevents ghosting.

[0107] Figure 17 One possible variation of the design shown is that the light-shielding element 130 is configured to have only one of the two coverings 234, 235.

[0108] The manufacture of the light-emitting device 100 can be performed as follows. Here, only a portion of the steps described below are illustrated with reference to the accompanying drawings.

[0109] During manufacturing, components such as a carrier plate 150, an electronic semiconductor chip 120, a light-emitting semiconductor chip 115, and a light-shielding element 130 can be provided. Here, the light-shielding element 130 can be manufactured separately. In a design scheme where the light-shielding element 130 is made of plastic or silicone material, the light-shielding element 130 can be manufactured by a molding process, such as injection molding, and... Figure 16 It is manufactured through two-component injection molding under the design scheme. In order to achieve Figure 17 In the design scheme, the substrate 233 can be produced, for example by molding process, such as injection molding, and the substrate 233 can subsequently be provided with coatings 234, 235 (or even only one of the coatings 234, 235).

[0110] The manufacture of the light-emitting device 100 may further include forming a molded body 170 on the front side of the carrier plate 150, such as in Figure 18 and Figure 19 As shown in the side sectional view and top view. Figure 19 In (and corresponding to) Figure 21 and Figure 23 The components of the support plate 150, such as the front contact element 156 and the heat dissipation structure 159, are not depicted. In order to form the molded body 170, a molding process such as transfer molding can be performed.

[0111] The molded body 170 surrounds a region in which an electronic semiconductor chip 120 can subsequently be disposed on the front side of the carrier plate 150 and on its heat dissipation structure 159, as shown in... Figure 20 and Figure 21 The process is illustrated in the side sectional view and top view. The process can be performed by bonding the electronic semiconductor chip 120 to the carrier plate 150. Alternatively, the electronic semiconductor chip 120 may be equipped with a light-emitting semiconductor chip 115 before being mounted on the carrier plate 150. Alternatively, after the electronic semiconductor chip 120 is placed on the carrier plate 115, the light-emitting semiconductor chip 115 may be placed on the mounting side 121 of the electronic semiconductor chip 120. The mounting of the light-emitting semiconductor chip 115 on the electronic semiconductor chip 120 can be achieved separately by soldering.

[0112] Subsequently, further steps can be performed to provide in Figure 22 and Figure 23 The setup is shown in a side sectional view and a top view. This includes a wire bonding process, wherein the contact elements 156 on the front side of the carrier plate 150 and the contact elements 126 of the electronic semiconductor chip 120 are electrically connected to each other via a wire bonding 160 at their mounting sides 121 (see also...). Figure 3 Furthermore, the semiconductor light source 110 is provided or completed by forming a conversion layer 118 on the light-emitting semiconductor chip 115. This can be done by spray coating, so that the electronic semiconductor chip 120 can also be covered with the conversion layer 118 on the side of the light-emitting semiconductor chip 115 (see [link]). Figure 7 Another step is to place the separately generated light-shielding element 130 on the mounting side 121 of the electronic semiconductor chip 120, which can be done by bonding the light-shielding element 130 to the semiconductor chip 120. The above steps can be performed in the above order or in a different order. In this respect, the method can also be modified such that the electronic semiconductor chip 120 is provided with the light-shielding element 130 before it is mounted on the carrier plate 150.

[0113] Subsequently, a potting material 180, which exists in a flowable form, can be applied to provide [the necessary conditions]. Figure 1 and Figure 2The light-emitting device 100 is shown in the figure. Here, a region within the molded body 170, bounded on one side by the molded body 170 and on the other side by the electronic semiconductor chip 120 and the light-shielding element 130, is filled with potting material 180. During this process, the light-shielding element 130 acts as a barrier, preventing the potting material 180 from being introduced into the internal region 137 surrounded by the light-shielding element 130, thereby preventing the semiconductor light source 110 from being submerged by the potting material 180. The application of the potting material 180 can be performed by casting. Alternatively, other processes are possible, such as dispensing using a dispensing machine or jetting using a printing device.

[0114] Regarding the method, the feasibility of manufacturing multiple light-emitting devices 100 in a common manner is also provided. In this respect, a carrier plate 150 having dimensions for multiple light-emitting devices 100 can be provided, and a molded body 170 can be molded on the carrier plate 150 such that the molded body 170 has multiple surrounding regions in which electronic semiconductor chips 120, optionally equipped with light-emitting semiconductor chips 115 and optionally equipped with light-shielding elements 130, are respectively mounted on the carrier plate 150. Through subsequent steps such as wire bonding, forming a conversion layer 118, disposing the light-shielding elements 130 on each electronic semiconductor chip in the electronic semiconductor chips 120 (unless previously not performed), and applying a potting material 180, a device composed of light-emitting devices 100 connected to each other can be produced. Subsequently, by cutting the molded body 170 and the carrier plate 150, the composite can be divided into individual light-emitting devices 100.

[0115] Mounting the light-emitting semiconductor chip 115 onto the electronic semiconductor chip 120 can be performed at the wafer level. Here, the wafer can be provided by electronic semiconductor chips 120 interconnected with each other, and multiple light-emitting semiconductor chips 115 can be disposed on the wafer, i.e., a light-emitting semiconductor chip 115 is disposed for each electronic semiconductor chip 120. Multiple electronic semiconductor chips 120 equipped with the light-emitting semiconductor chips 115 can be provided in this manner through subsequent wafer dicing.

[0116] Providing the light-shielding element 130 can be performed in a manner and method different from that of separately generating and placing it on the electronic semiconductor chip 120. For example, in Figure 24 The variation described herein involves constructing the surrounding or frame-like light-shielding element 130 by performing a 3D printing process on the mounting side 121 of the electronic semiconductor chip 120. This process is performed using a 3D printer. Figure 24The print head 260 of the 3D printer is shown in the figure. In the process, the light-shielding element 130 is made of plastic material. Here, the manufactured light-shielding element 130 is directly adjacent to the electronic semiconductor chip 120. The 3D printing process can be performed with the electronic semiconductor chip 120 already having a light-emitting semiconductor chip 115.

[0117] Figure 25 Another design for providing a light-shielding element 130 on the mounting side 121 of an electronic semiconductor chip 120 is shown. Here, a contoured strip-shaped initial body 237 is provided and disposed on the electronic semiconductor chip 120. In this process, the initial body 237 can be progressively fastened to the electronic semiconductor chip 120 along the desired contour of the light-shielding element 130, for example, by rolling on the electronic semiconductor chip 120. The strip-shaped initial body 237, having the aforementioned contour with an inner undercut 135 in cross-section, can be produced from a flexible plastic material. The strip-shaped initial body 237 can be disposed on the electronic semiconductor chip 120 by adhesive bonding.

[0118] Figure 26 Another design for providing a light-shielding element 130 on the mounting side 121 of an electronic semiconductor chip 120 is shown. Here, a sizing template 270 is used to apply a paste-like raw material 238 onto the electronic semiconductor chip 120. In this variation, the manufactured light-shielding element 130 is also directly adjacent to the electronic semiconductor chip 120. The template 270 has a recess 271 for pre-setting the desired cross-sectional shape of the light-shielding element 130 to be manufactured, which has an inner undercut 135. To produce the light-shielding element 130, the template 270 can be guided above the electronic semiconductor chip 120 along the desired contour to be manufactured for the light-shielding element 130, and the paste-like raw material 238 can be extruded through the recess 271, thereby progressively forming the light-shielding element 130 on the electronic semiconductor chip 120. The paste-like raw material 238 can be, for example, a silicone resin material.

[0119] Corresponding to the arrangement of the light-emitting semiconductor chip 115, the provision of the light-shielding element 130 on the electronic semiconductor chip 120 can also be performed at the wafer level, that is, in the presence of a wafer composed of interconnected electronic semiconductor chips 120. Here, for example, by providing separately generated light-shielding elements 130 or by other means and methods, such as by 3D printing, light-shielding elements 130 can be provided on each electronic semiconductor chip in the electronic semiconductor chip 120.

[0120] In addition to the embodiments described above and depicted in the accompanying drawings, other embodiments not shown are conceivable, which may include other variations and / or combinations of features.

[0121] In this sense, the above descriptions of materials and numerical values ​​can be regarded as examples, and can be replaced by other descriptions.

[0122] Regarding further variations and combinations, for example, the light-shielding element 130 in... Figures 9 to 12 The design shown can be implemented with an inner side 132 that is at least partially curved, thus corresponding to Figures 13 to 15 This design scheme can also be applied, for example, to... Figure 17 The light-shielding element 130 shown is configured such that the substrate 233 is correspondingly formed. Furthermore, the design of the light-shielding element 130 having an inclined front side 131 is as follows... Figure 8 As shown, or a design scheme having a front opening 142 and a stop edge 145, such as in Figures 10 to 12 As shown, it can be used with Figure 16 Or perhaps it is related to Figure 17 The corresponding method is used to achieve this. Furthermore, as... Figure 9 The design of the light-shielding element 130 with the laterally extending section 141 shown can be as follows: Figure 8 and Figures 10 to 17 The design scheme shown is used in practice. Another variation corresponds to... Figure 8 The design scheme is such that only a portion of the front side 131 of the light-shielding element 130 extends obliquely, and another portion extends parallel to the mounting side 121 of the electronic semiconductor chip 120.

[0123] Another variation is that the pixelated semiconductor light source 110 is not implemented using pixelated semiconductor chips 115, but instead uses a device or pixel device composed of multiple light-emitting semiconductor chips, such as LED chips. The multiple semiconductor chips may have a common conversion layer for radiation conversion, or they may have their own separate conversion layers for radiation conversion. Furthermore, the semiconductor light source 110 may be implemented using only a single, non-pixelated light-emitting semiconductor chip or LED chip and an optional conversion layer for radiation conversion disposed thereon.

[0124] In another variation, the electronic semiconductor chip 120 can be replaced by another carrier substrate or chip substrate.

[0125] In addition to the aforementioned headlight application of the light-emitting device 100, other applications can be considered, such as its application in projectors.

[0126] Although the details of the invention have been described and illustrated in detail through preferred embodiments, the invention is not limited by the disclosed examples and other variations can be derived by those skilled in the art without departing from the scope of protection of the invention.

[0127] List of reference numerals

[0128] 100 Light-emitting devices

[0129] 110 Semiconductor Light Source

[0130] 111 pixels

[0131] 115 Light-emitting semiconductor chip

[0132] 116 Contact elements

[0133] 118 Transition Layer

[0134] 120 Electronic Semiconductor Chips

[0135] 121 Installation side

[0136] 126 Contact elements

[0137] 127 Contact element

[0138] 130 light-shielding element

[0139] 131 Front

[0140] 132 Inner side

[0141] 133 Outer side

[0142] 135 Undercut

[0143] 137 Internal Area

[0144] 141. Extended section

[0145] 142. Empty section

[0146] 145 Stop edge

[0147] 147 Partial Areas

[0148] 150 bearing plate

[0149] 151 Contact Structure

[0150] 156 Contact elements

[0151] 157 Contact element

[0152] 159 Heat dissipation structure

[0153] 160 bond wire

[0154] 170 Molded body

[0155] 180 potting material

[0156] 190 Dam

[0157] 201 Horizontal direction

[0158] 202 Vertical direction

[0159] 210 light radiation

[0160] 211 Back-reflected light radiation

[0161] 230 shading section

[0162] 231 shading section

[0163] 233 matrix

[0164] 234 Coating

[0165] 235 cladding

[0166] 237 Initial Body

[0167] 238 raw materials

[0168] 241 Spacing

[0169] 242 thickness

[0170] 243 Inclination Angle

[0171] 250 lighting fixtures

[0172] 251 Imaging Optical Device

[0173] 255 Lighting Plane

[0174] 256 Illuminated Area

[0175] 260 printhead

[0176] 270 Templates

[0177] 271. Blank Space

Claims

1. A light-emitting device (100) comprising a semiconductor light source (110), a surrounding light-shielding element (130), and a carrier substrate (120), The semiconductor light source (110) and the light-shielding element (130) are disposed on the mounting side (121) of the carrier substrate (120). The semiconductor light source (110) is located in the inner region (137) of the light-shielding element (130), which is surrounded by the inner side (132) of the light-shielding element (130). Furthermore, when viewed in cross-section, the light-shielding element (130) has an undercut (135) on the inner side (132), thereby having a shape that protrudes inward in the direction away from the mounting side (121) of the carrier substrate (120).

2. The light-emitting device according to claim 1, The undercut portion (135) is formed such that the inner side (132) of the light-shielding element (130) is curved and / or inclined to the mounting side (121) of the carrier substrate (120).

3. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has a front side (131) facing away from the carrier substrate (120), which is inclined at least in a portion of the area to the mounting side (121) of the carrier substrate (120) and is configured to extend outward and descend.

4. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has a gap (142) on the front side (131) away from the carrier substrate (120), and the gap has a stop edge (145) for potting material (180).

5. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has an outwardly extending section (141) on its front side (131) away from the carrier substrate (120), wherein the carrier substrate (120) has a contact element (126) on its mounting side (121) outside the inner region (137) surrounded by the light-shielding element (130), on which a bonding wire (160) is connected, and wherein the bonding wire (160) is covered at least in the region of the contact element (126) on the carrier substrate (120) by the extending section (141) of the light-shielding element (130) to achieve mechanical protection.

6. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has a lower light-shielding section (230) and an upper light-shielding section (231) disposed on the lower light-shielding section (230). The light-shielding element (130) is disposed on the carrier substrate (120) with the lower light-shielding section (230). The lower and upper light-shielding sections (230, 231) have different material properties.

7. The light-emitting device according to claim 6, The lower light-shielding section (230) is made of an absorbent or transparent material, and the upper light-shielding section (231) is made of a reflective material.

8. The light-emitting device according to any one of claims 6 or 7, The light-shielding element (130) is formed in the form of a two-component injection molded part.

9. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has a reflective coating (234) on its front side (131) away from the carrier substrate (120).

10. The light-emitting device according to any one of the preceding claims, The light-shielding element (130) has an absorbent coating (235) on its inner side (132).

11. The light-emitting device according to any one of the preceding claims, The light-emitting device (100) has a potting material (180) located outside the inner region (137) surrounded by the light-shielding element (130) and at least adjacent to the outer side (133) of the light-shielding element (130) and the mounting side (121) adjacent to the carrier substrate (120).

12. The light-emitting device according to any one of the preceding claims, The light-emitting device (100) has a carrier plate (150), and the carrier substrate (120) is disposed on the carrier plate. The carrier plate (150) and the carrier substrate (120) are electrically connected via bonding wires (160). And wherein the bonding wire (160) is connected to the contact element (126) at the mounting side (121) of the carrier substrate (120) outside the inner region (137) surrounded by the light-shielding element (130).

13. The light-emitting device according to claim 12, The bonding wire (160) is embedded in the potting material (180). and / or The light-emitting device (100) has a molded body (170) disposed on the carrier plate (150), the molded body surrounding the carrier substrate (120), the semiconductor light source (110) and the light-shielding element (130).

14. The light-emitting device according to any one of the preceding claims, The carrier substrate (120) is an electronic semiconductor chip used to control the semiconductor light source (110).

15. The light-emitting device according to any one of the preceding claims, The semiconductor light source (110) has a pixelated light-emitting semiconductor chip (115).

16. The light-emitting device according to any one of the preceding claims, The undercut portion (135) is an open undercut portion in which no solid exists.

17. A method for manufacturing a light-emitting device (100), the method comprising: Provide a carrier substrate (120); A semiconductor light source (110) is provided on the mounting side (121) of the carrier substrate (120); and A surrounding light-shielding element (130) is provided on the mounting side (121) of the carrier substrate (120). The semiconductor light source (110) and the light-shielding element (130) are provided such that the semiconductor light source (110) is located in the inner region (137) of the light-shielding element (130), the inner region being surrounded by the inner side (132) of the light-shielding element (130). Furthermore, when viewed in cross-section, the light-shielding element (130) has an undercut (135) on the inner side (132), thereby having a shape that protrudes inward in the direction away from the mounting side (121) of the carrier substrate (120).

18. The method according to claim 17, The light-shielding element (130) provided includes one of the following: The light-shielding element (130) is produced separately and then disposed on the carrier substrate (120); or The light-shielding element (130) is formed on the carrier substrate (120) by performing a 3D printing process.

19. The method according to claim 17, The provision of the light-shielding element (130) includes providing a contoured strip-shaped initial body (237) made of a flexible plastic material, and the initial body (237) is disposed on the carrier substrate (120).

20. The method according to claim 17, Providing the light-shielding element (120) includes applying a paste-like raw material (238) onto the carrier substrate (120) using a template (270), the template having a gap (271) for presetting the cross-sectional shape of the light-shielding element (130).

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