Quartz component and protection method, plasma apparatus, and plasma processing method

Abstract

The application relates to a quartz component and a protection method, a plasma equipment and a plasma processing method, and belongs to the technical field of semiconductor processing equipment. The protection method comprises the following steps: removing an existing metal compound passivation layer on the surface of a quartz component by using a chlorine-based plasma; and then depositing a new metal compound passivation layer to provide protection against fluorine corrosion. The etching rate of the metal compound passivation layer to a fluorine-based plasma is far lower than the etching rate of the metal compound passivation layer to quartz material, and the metal compound passivation layer has excellent barrier properties to hydrogen and oxygen plasmas. Only a cleaning and redeposition cycle process is needed, a consistent chamber environment can be formed before each process to provide protection, the quartz component can be effectively protected from being attacked by corrosive plasma, the service life of the quartz component is significantly prolonged, process particles are reduced, and process stability is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a quartz component and protection method suitable for the interior of a plasma equipment (such as etching equipment, chemical vapor deposition CVD equipment), as well as plasma equipment and plasma processing methods. Background Technology

[0002] In semiconductor chip manufacturing, plasma etching and chemical vapor deposition (CVD) are key process steps. Quartz, due to its excellent dielectric properties, high purity, and good thermal stability, is often used as a critical component in these process equipment, such as chamber windows, gas distribution plates, and focusing rings. Quartz is the preferred window material, especially for the window portion where radio frequency energy is introduced into the chamber.

[0003] However, with advancements in manufacturing technology, especially the introduction of high-hydrogen, high-oxygen plasma processes in advanced logic and memory chip manufacturing (such as H2-based resist stripping processes and O2-based ashing processes), quartz materials exposed to these active plasmas are easily corroded, leading to surface micro-roughening and the generation of microparticles. These particles can contaminate the wafer surface, causing device defects and reduced yield. Furthermore, the frequent replacement of quartz components increases equipment maintenance costs and downtime.

[0004] Currently, there is no effective solution in the industry for protecting quartz components. Moreover, routine maintenance methods for the interior of plasma equipment cavities typically include fluorine-based cleaning (with or without a plate), oxygen plasma cleaning, and deposition of a silicon oxide protective layer after fluorine-based cleaning. These maintenance methods not only fail to effectively protect quartz components, but also exacerbate their wear and tear during cleaning and deposition processes.

[0005] Therefore, there is an urgent need for a new protection method for quartz components inside the equipment cavity that can effectively block the direct erosion of quartz by highly active plasma. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of existing technologies and provide a method for protecting quartz components inside the cavities of plasma processing equipment (such as etching equipment, chemical vapor deposition (CVD) equipment, etc.), as well as plasma equipment and plasma processing methods. It is particularly suitable for use in high-hydrogen, high-oxygen plasma process environments, significantly extending the lifespan of quartz components within the equipment, reducing particulate contamination, and improving process stability. Furthermore, in addition to effectively preventing the direct erosion of quartz by highly reactive plasma, it does not affect existing plasma processes and is easily integrated into existing equipment and processes.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] A surface treatment method for quartz components in plasma processing equipment, the core of which is to perform a cyclic pretreatment process of "chlorine-based plasma cleaning → passivation layer deposition" before the main process (such as etching, deposition). This pretreatment process first uses chlorine-based plasma to thoroughly remove the fluorine-resistant passivation layer and other potentially adhering contaminants remaining on the surfaces of the quartz components and cavity interior after the previous process. Then, a dense and uniform new passivation layer is immediately redeposited on the clean cavity and quartz component surfaces. This passivation layer acts as a sacrificial layer during the main process, effectively blocking direct attack from hydrogen and oxygen reactive substances on the underlying quartz material. After the main process is completed, this passivation layer can be efficiently and selectively removed by chlorine-based plasma in the next pretreatment without damaging the quartz substrate, thus forming a cyclical protective mechanism.

[0009] This invention fully utilizes the extremely high etching selectivity of chlorine-based plasma for passivation layers containing metal compounds (such as aluminum oxide (Al2O3) passivation layers) and silicon dioxide (SiO2). In this chemical system, the etching rate of chlorine radicals on Al2O3 is much higher than that on SiO2, which allows the cleaning step to precisely remove the passivation layer without causing substantial damage to the quartz component.

[0010] Compared with the prior art, the beneficial effects of the present invention include:

[0011] Significantly extends the lifespan of quartz: Through the physical barrier of the passivation layer, direct contact between quartz and corrosive plasma is avoided, which can extend the service life of quartz components by several times;

[0012] Reduce particulate contamination: Significantly reduces particulate matter generated by quartz surface erosion, improving wafer product yield;

[0013] Improve process stability: The surface condition of the chamber interior (e.g., all are fresh alumina surfaces) is highly consistent before each process, so that the atmosphere of each process implementation will be very consistent, ensuring the repeatability and stability of the process results.

[0014] Good compatibility: This method is easy to integrate into existing equipment and process routes;

[0015] Low overall cost: Although the pretreatment steps are added, the overall production cost is lower because it significantly reduces the frequency of quartz component replacement and cavity maintenance time. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the fluorine corrosion process on quartz components;

[0017] Figure 2 This is a schematic diagram comparing the surface of a quartz component before and after it was etched by fluorine using electron microscopy.

[0018] Figure 3 This is a schematic diagram comparing the different selectivity ratios of chlorine-based and fluorine-based plasmas for common materials;

[0019] Figure 4 This is a schematic diagram illustrating the mechanism of the passivation layer used to resist fluorine corrosion in this invention;

[0020] Figure 5 This is a schematic diagram comparing the surface of a quartz component before and after it was corroded by fluorine, using the protective measures of this invention.

[0021] Figure 6 This is a schematic diagram of the process of forming an anti-fluorine corrosion passivation layer by chlorine-based cleaning and redeposition in this invention;

[0022] Figure 7 This is a schematic diagram of Al2O3 deposition used in this invention as an anti-fluorine corrosion metal compound passivation layer;

[0023] Figure 8 This is a schematic diagram of AlN deposition, which uses AlN as an anti-fluorine corrosion metal compound passivation layer in this invention. Detailed Implementation

[0024] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0025] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0026] It should be noted that various aspects of embodiments within the scope of the appended claims are described below. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any particular structure and / or function described herein is merely illustrative. Based on this invention, those skilled in the art will understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspects set forth herein can be used to implement the device and / or practice the method. Additionally, this device and / or method can be implemented using structures and / or functionalities other than one or more of the aspects set forth herein.

[0027] It should also be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. The drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0028] Additionally, specific details are provided in the following description to facilitate a thorough understanding of the examples. However, those skilled in the art will understand that practice can be carried out without these specific details.

[0029] Plasma processes (such as plasma etching and chemical vapor deposition (CVD)) are key process steps in semiconductor manufacturing. Currently, key components used inside process equipment, such as chamber windows, gas distribution plates, and focusing rings, are generally divided into two main categories: quartz components and ceramic components. Quartz is preferred because of its excellent dielectric properties, high purity, and good thermal stability, especially in the window area where radio frequency energy is introduced into the chamber. Quartz has a high transmittance of 90%, while ceramic has a transmittance of less than 60%.

[0030] However, plasma processing is typically a fluorine-containing process, and fluorine plasma can corrode quartz, leading to rapid wear and tear on quartz components. In particular, the surface of the quartz component becomes rapidly roughened after being corroded by fluorine (see...). Figure 1 and Figure 2 The image shows the electron microscope results before and after fluorine etching of the quartz surface (even the quartz component surface can be contaminated with particulate matter during the process, leading to wafer contamination).

[0031] Regarding the problem of fluorine corrosion of quartz, the causes of corrosion are explored and analyzed as follows:

[0032] refer to Figure 1As illustrated, since the main component of quartz is silicon dioxide (SiO2), its structure is a very stable three-dimensional network structure formed by silicon atoms (Si) and oxygen atoms (O) linked by strong covalent bonds. Common acids (such as HCl, H2SO4, HNO3) generally have difficulty breaking this stable Si-O bond (see...). Figure 1 (The solid lines in the diagram represent Si-O bonds).

[0033] However, fluoride ions (F - The unique feature of fluorine is that it can react with silicon atoms (Si) to form very stable hexafluorosilicate ions. The specific mechanism is illustrated below: the fluorine etching process is... - Attacking Si atoms, i.e., the highly electronegative F atoms - It strongly attracts and attacks partially positively charged Si atoms in the three-dimensional network structure, causing F... - It combines with Si, causing the original Si-O bonds to break (see...) Figure 1 The dashed lines in the diagram represent Si-O bonds, and ultimately a SiO2 unit is bonded by six F atoms. - Surround ( Figure 1 (not shown in the image) forms hexafluorosilicate ions, which are soluble in water and thus detach from the quartz surface, causing erosion of the quartz surface (see image). Figure 1 or Figure 2 (Illustrative image showing the roughening effect on a quartz surface after fluorine corrosion).

[0034] Furthermore, because quartz is an anisotropic crystal, the atomic density and bond strength vary slightly across different crystal faces. This results in varying rates of fluorine erosion in different directions, ultimately leading to specific erosion morphologies. The originally smooth quartz surface becomes exceptionally rough, covered with nanoscale or microscale erosion pits (see...). Figure 1 or Figure 2 The illustration shows the roughening results of quartz surface after fluorine etching, including mounds and triangular pits. These etching pits can significantly degrade the performance of quartz components and shorten their lifespan. Furthermore, in more serious cases, contaminant particles can form on the defective surface of the quartz, contaminating the wafer during wafer fabrication, reducing wafer quality, and increasing costs.

[0035] Currently, the common practice is to remove the worn quartz components from the equipment cavity and replace them with new ones when production is stopped. This not only increases maintenance costs but also reduces production capacity.

[0036] Therefore, how to suppress fluorine corrosion on the surface of quartz components is an urgent problem that needs to be solved.

[0037] If the protection against fluorine corrosion of the quartz components can be completed within the equipment cavity, the equipment can remain on the production line. Only one or more related processing steps need to be added to the equipment to provide surface protection for these quartz components, thus preventing fluorine corrosion. It should be noted that although an anti-fluorine corrosion treatment process is added to the equipment, this process does not require shutting down the equipment to disassemble and reassemble the quartz components. Furthermore, the process can complete the surface protection of the quartz components inside the equipment and does not affect subsequent production processes. Therefore, the impact of the added treatment process on the equipment's capacity is negligible, effectively avoiding any loss of equipment capacity.

[0038] Guided by the above-mentioned improvement ideas, this invention continues to conduct in-depth research and analysis on the production process of semiconductor manufacturing equipment and the mechanism of preventing fluorine corrosion on the surface of quartz components. It was further discovered that chlorine-based plasma has a large selectivity for quartz (SiO2) and general metal compound passivation layers (such as aluminum oxide Al2O3, aluminum nitride AlN, yttrium oxide Y2O3, lanthanum oxide La2O3, gadolinium oxide Gd2O3, erbium oxide Er2O3, titanium nitride TiN, silicon nitride, etc.), and fluorine-based plasma also has a large selectivity for quartz (SiO2) and general metal compound passivation layers.

[0039] For example, comparative analysis of SiO2 and Al2O3 reveals that the Si-O bond has a much stronger bond energy (approximately 799 kJ / mol) compared to the Al-O bond (approximately 501 kJ / mol). Therefore, in chlorine-based plasmas, simple chlorine radicals or chloride ions find it difficult to directly and effectively break the Si-O bond, while chlorine radicals or chloride ions more easily break the Al-O bond. Furthermore, in the etching of Al2O3 ceramic layers by chlorine-based plasmas, the etching product is AlCl3. The formation of AlCl3 is highly exothermic, making the reaction chemically easier to occur. It has a boiling point of 180°C and an enthalpy of formation of -584 kJ / mol. Heating the substrate (e.g., increasing the stage temperature to above 200°C) can effectively increase the etching rate to 100-200 nm / min.

[0040] refer to Figure 3 This illustrates that the etching rate of SiO2 by chlorine groups is much slower than the etching rate of these passivation layers, while the etching rate of SiO2 by fluorine groups in the fluorine process is much faster than the etching rate of these passivation layers. Here, the etching rate of plasma on different materials can be understood as the selectivity ratio.

[0041] Although titanium nitride (TiN) exhibits unique behavior under chlorine-based conditions—specifically, its etching rate is higher with fluorine-based materials—it remains suitable as a passivation layer against fluorine corrosion due to the high selectivity of chlorine-based materials for both TiN and SiO2. Similarly, silicon nitride (Si3N4) also exhibits unique behavior under chlorine-based conditions, with similar etching rates for both chlorine and fluorine-based materials. However, because chlorine-based materials still exhibit a high selectivity for silicon nitride and SiO2, silicon nitride remains suitable as a passivation layer against fluorine corrosion. Therefore, when selecting a passivation layer, the selectivity ratio between the passivation layer and SiO2 can be used to optimize its suitability as a passivation layer for resisting fluorine corrosion on the surface of quartz components in semiconductor manufacturing processes.

[0042] It should be noted that the selectivity ratio in this invention can refer to the ratio of different etching rates between these passivation layers and SiO2. For example, under the action of chlorine, the ratio of different etching rates between the passivation layer and SiO2 by the chlorine group. In this case, when the selectivity ratio is greater than 1, it means that the chlorine group etches the passivation layer faster than it etches SiO2. Therefore, the chlorine-containing gas in this case can be preferred as the process gas for the cleaning step in this invention as a preferred embodiment. For example, chlorine groups etch Al2O3 quickly but etch SiO2 slowly, especially the chlorine group etches Al2O3 much faster than it etches SiO2. Therefore, when chlorine groups are used as the process gas for the cleaning step, they have a very high selectivity ratio.

[0043] In this invention, the selection ratio can be higher than 5:1, or it can be defined as a higher or lower selection ratio.

[0044] Therefore, if we can take advantage of the high selectivity of chlorine-based and fluorine-based materials for different materials, we can first use chlorine-based plasma to clean the quartz surface, and then form a passivation layer on the quartz surface that is resistant to fluorine-based corrosion. This passivation layer can then be used to prevent the quartz surface from being corroded by fluorine.

[0045] refer to Figure 4The mechanism of resistance to fluorine corrosion is illustrated below, using a dense passivation layer containing AlN or Al2O3 metal compounds as an example: The dense metal compound passivation layer (such as an AlN or Al2O3 dense passivation layer) provides excellent protection for the surface of quartz components due to its extremely high chemical stability and dense structure. Under the blocking effect of this dense passivation layer, fluorine groups are blocked, effectively preventing fluorine groups from penetrating the surface of the quartz component and avoiding surface roughening or even the formation of particulate contaminants due to fluorine corrosion. It should be noted that even after semiconductor manufacturing equipment has undergone multiple processes using fluorine-containing gases, only a very thin and non-volatile stable fluoride layer (such as AlF3) is formed on the surface of the dense passivation layer. This fluoride layer can further block fluorine groups from corroding the surface of the quartz component, resulting in a very low replacement frequency and a very long service life for the quartz component. Furthermore, in this invention, fluorine corrosion can refer to the damage to the quartz surface structure caused by fluorine, such as a roughened surface, stress cracking, or even spalling to form particles.

[0046] It should be noted that when using chlorine-based plasma to clean passivation layers (such as Al2O3), the chlorine group can very effectively remove substances such as... Figure 4 The diagram illustrates a thin-layer fluoride, AlF3. The working principle is as follows: A chemical reaction occurs between the chlorine group and AlF3, where F is replaced by Cl, generating volatile AlCl3. Therefore, the non-volatile thin-layer fluoride AlF3 is successfully and easily converted into a volatile and easily removable AlCl3 product via the chlorine group. This AlCl3 product can be completely removed through evaporation and will not affect subsequent processes.

[0047] Combination Figure 2 and Figure 5 As illustrated, the surface of a brand-new quartz component has no roughening morphology. Without the protective measures of the present invention, the surface of the quartz component would have a severely roughened morphology after being corroded by fluorine. However, after adopting the protective measures of the present invention, the surface of the protected quartz component is basically similar to that of a brand-new component, without any roughening morphology. This demonstrates that the protective measures provided by the present invention effectively protect the quartz component from fluorine corrosion.

[0048] Based on the above explorations, this invention proposes a protection scheme for quartz components: (Refer to...) Figure 6The diagram illustrates that, for the quartz components inside the equipment cavity, the equipment uses existing (or newly added) pipelines and control systems to introduce chlorine-containing process gas (such as chlorine source gas as an example), and activates it into plasma. This allows the chlorine-based plasma to complete the chlorine-based cleaning process on the fluorine-resistant passivation layer (such as Al2O3, or even the thin layer of fluoride AlF3 formed on Al2O3 during multiple fluorination processes) on the surface of the quartz component, thereby obtaining a clean quartz component that has not been fluorinated. Then, the fluorine-resistant passivation layer obtained by deposition is followed by the introduction of a corresponding metal-organic precursor and reactive gas for deposition. For example, if an Al2O3 passivation layer needs to be deposited as a fluorine-resistant protective layer, an aluminum source (such as TEA (Al(C2H5)3), TMA (Al(CH3)3), AlCl3, etc.) and an oxidant reactive gas (such as O2, N2O, or CO2, etc.) can be introduced. This allows the aluminum source and oxidant gas plasma to deposit a dense layer (i.e., an Al2O3 dense layer) on the surface of the quartz component. This Al2O3 dense layer is then used as a passivation layer to prevent fluorine corrosion, effectively preventing the corrosion of the quartz component surface by fluorine-containing gases such as NF3, CF4, and SF6 under plasma activation during the process. It should be noted that the above... Figure 6 The illustration uses chlorine-based and Al2O3 as passivation layers. Other passivation layers that are beneficial for resisting fluorine corrosion can be found in the Al2O3 example, but they are not listed in this example.

[0049] In summary, the chlorine-based plasma cleaning step ensures that even if a fluorinated layer (such as the AlF3 layer "shell") is present, it can be effectively broken down and removed, thus guaranteeing that the passivation layer is completely removed with each cleaning. The cyclical protection treatment method of this invention, "chlorine-based cleaning + fluorine-resistant passivation layer (such as Al2O3) deposition," relies not only on the high etching rate of chlorine on Al2O3 but also on the excellent cleaning ability of chlorine on the byproducts (such as AlF3) generated on the surface of the Al2O3 passivation layer during the fluorination process. Therefore, chlorine-based cleaning acts like an "all-around cleaner," efficiently removing the Al2O3 passivation layer and easily cleaning away the very dense and non-volatile stable ("stubborn") fluorinated layer residues (such as AlF3) on the surface of the Al2O3 passivation layer, preparing a clean and tidy SiO2 surface for the next deposition of a new passivation layer.

[0050] By performing a cyclical protective treatment on the surface of quartz components using "chlorine-based cleaning + anti-fluorine corrosion passivation layer deposition", a dense protective layer is formed on the surface of the quartz components. For example, a dense layer with good stability such as Al2O3 or AlN is formed. This dense layer is used as an anti-fluorine corrosion barrier layer, making the surface of the quartz components less susceptible to fluorine corrosion. This eliminates the risk of roughening of the surface of the quartz components after fluorine corrosion, or even the formation of particulate matter that contaminates the wafer chip. Furthermore, the cyclic protection process of "chlorine-based cleaning + anti-fluorine corrosion passivation layer deposition" does not require equipment shutdown or disassembly of quartz components. It only requires adding this cyclic protection process to the equipment, thus avoiding the production capacity loss caused by equipment shutdown. The added cyclic protection process can be completed by using the equipment itself and introducing the corresponding reaction source. For example, chlorine source gas can be introduced in the chlorine-based cleaning step to form chlorine-based plasma for cleaning. Or, in the deposition step, the corresponding metal-organic precursor and reactive gas can be introduced (e.g., aluminum source precursor and oxidant gas can be introduced when depositing Al2O3) to deposit the corresponding metal compound passivation layer (e.g., depositing an Al2O3 passivation layer). Moreover, the impact of the cleaning and deposition processes on subsequent production processes is negligible.

[0051] Furthermore, before the improvement, the quartz components needed to be replaced frequently due to fluorine corrosion, while after the improvement, the quartz components are resistant to fluorine corrosion and basically do not require frequent maintenance. The maintenance cycle can be extended from monthly to annual, saving a lot of maintenance costs and significantly improving equipment capacity and wafer yield.

[0052] It should be noted that the anti-fluorine corrosion pretreatment process of the present invention, "chlorine-based cleaning + anti-fluorine corrosion passivation layer deposition", can be implemented whether there is a wafer in the cavity or not, and has little impact on existing processes.

[0053] Furthermore, those skilled in the art should understand that the passivation layer in this invention can be a thin film layer with metal compounds or non-metal compounds as the main components, but may contain a small amount of other components generated due to process conditions. That is, the passivation layer in this application is a passivation layer containing metal or non-metal compounds (or based on metal or non-metal compounds). The passivation layer uses metal or non-metal compounds as the main functional and structural components to achieve the purpose of resisting fluorine corrosion, but at the same time, it is permissible to have other non-dominant, unintentionally introduced minor components (such as process by-products, trace impurities, etc.). Therefore, the passivation layer can be a metal inorganic ceramic thin film layer in the form of a mixture, or it can be a metal compound passivation layer in the form of a pure metal compound.

[0054] This invention provides a method for protecting quartz components inside a plasma processing device, comprising:

[0055] Several chlorine-based plasma cleaning steps: a chlorine-containing process gas is introduced into a processing chamber containing a quartz component and plasma is excited to selectively remove a passivation layer containing a metal compound on the surface of the quartz component using chlorine-based plasma, wherein the passivation layer is a dense passivation layer resistant to fluorine corrosion in a fluorine-based plasma process.

[0056] Several deposition steps: After the chlorine-based plasma cleaning, a new passivation layer is redeposited on the surface of the quartz component to utilize the passivation layer to suppress the fluorine-based plasma from eroding the quartz component during the fluorine-based plasma process.

[0057] It should be noted that, in this application, the passivation layer refers to a dense passivation layer containing some metal compounds that can resist fluorine corrosion in fluorine-based plasma processes. Subsequent examples in this invention list some metal oxides, metal nitrides, or combinations thereof. For example, the metal compounds can be one or more combinations of aluminum oxide (Al₂O₃), aluminum nitride (AlN), titanium nitride (TiN), yttrium oxide (Y₂O₃), lanthanum oxide (La₂O₃), gadolinium oxide (Gd₂O₃), and erbium oxide (Er₂O₃). Therefore, those skilled in the art should understand that the metal oxides and metal nitrides listed in this invention are not limited to these; any passivation layer containing metal compounds that can resist fluorine corrosion and can be removed by a cleaning process falls within the scope of protection of this invention.

[0058] In some embodiments, the passivation layer is etched at a higher rate by chlorine-based plasma than by quartz, and the etching selectivity ratio of chlorine-based plasma for the metal compound passivation layer to quartz is greater than 5:1.

[0059] In some embodiments, the metal compound includes metal oxides, metal nitrides, or combinations thereof.

[0060] In some embodiments, the metal oxide includes one or more of aluminum oxide, yttrium oxide, lanthanum oxide, gadolinium oxide, and erbium oxide; and the metal nitride includes one or more of aluminum nitride, titanium nitride, and silicon nitride.

[0061] In some embodiments, the deposition step is performed using plasma-enhanced chemical vapor deposition, thermochemical vapor deposition, or atomic layer deposition.

[0062] In some embodiments, when the metal compound passivation layer is an oxide passivation layer, the deposition step uses a metal-organic precursor and an oxidant O2, O3, H2O, H2O2 or N2O as a reaction source.

[0063] In some embodiments, when the metal compound passivation layer is a nitride passivation layer, the deposition step uses a metal-organic precursor and a nitrogen source gas NH3 or a N2 / H2 mixture as the reaction source.

[0064] In some embodiments, when the oxide passivation layer is an aluminum oxide passivation layer or the nitride passivation layer is an aluminum nitride passivation layer, the organometallic precursor is selected from one or more of trimethylaluminum, triethylaluminum, trimethylyttrium, and aluminum trichloride.

[0065] In some embodiments, after the chlorine-based plasma cleaning step and before the deposition step, the method further includes a purging step using an inert gas and / or a vacuum extraction step to remove residual chlorine actives and byproducts from the cleaning step.

[0066] In some embodiments, a secondary purging step and / or vacuum extraction step are performed after the deposition step to remove byproducts of the deposition step.

[0067] In some embodiments, the carrier gas used in the purging step includes at least one of the following gases: O2, Ar, He, and N2.

[0068] In some implementations, the purging flow rate is 100-1000 sccm and the time is 1-60 seconds.

[0069] In some embodiments, the process gas used in the chlorine-based plasma cleaning includes one or more of Cl2, BCl3, SiCl4, CCl4, and HCl.

[0070] In some embodiments, the process parameters for the chlorine-based plasma cleaning include: pressure 0.001-1 Torr, radio frequency power 100-2000 W, gas flow rate 50-2000 sccm, and processing time 5-300 seconds.

[0071] In some embodiments, the deposition process parameters of the passivation layer include: deposition temperature 20-400℃, pressure 0.05-20 Torr, and radio frequency power 10-500W.

[0072] In some embodiments, the passivation layer formed in each of the deposition steps has a thickness of 0.1 nm to 200 nm.

[0073] In some embodiments, the chlorine-based plasma cleaning step uses an endpoint detection method to control the cleaning time. The endpoint detection method includes optical emission spectroscopy to monitor changes in the intensity of characteristic spectral lines of metals or mass spectrometry to monitor changes in the partial pressure of metal-containing byproducts.

[0074] The following description, in conjunction with the accompanying drawings, illustrates other preferred technical solutions of the various embodiments of the present invention.

[0075] Example 1: Surface protection of quartz components based on Al2O3 passivation layer

[0076] Combination Figure 6 and Figure 7 This diagram illustrates that in protecting the surface of a quartz component using an Al2O3 passivation layer, a chlorine-based cleaning step can be performed first using chlorine-based plasma. This involves introducing a chlorine-containing process gas into the processing chamber containing the quartz component and exciting the plasma, thereby selectively removing the fluoride-resistant Al2O3 passivation layer from the surface of the quartz component using the chlorine-based plasma. After cleaning, a new fluoride-resistant Al2O3 passivation layer is then deposited. It should be noted that the Al2O3 passivation layer deposition process can refer to existing processes or the deposition steps illustrated in this invention.

[0077] Step 1, Chlorine-based plasma cleaning: Chlorine source gas (such as Cl2 / Ar) plasma can be used to remove the fluorinated Al2O3 passivation layer. During the removal process, the intensity change of AlCl characteristic spectral lines can be used as the criterion for the end of the cleaning process.

[0078] Additionally, the following examples can be used as a reference during the cleaning process.

[0079] In addition to Cl2, BCl3 / Cl2 mixed gases (e.g., BCl3: 50 sccm, Cl2: 100 sccm) can also be used as the cleaning process gas, where BCl3 helps to enhance the removal capacity of metal contaminants. Alternatively, one or more of BCl3, SiCl4, CCl4, and HCl can also be used as the cleaning gas.

[0080] Pressure: It can be adjusted between 0.1 Torr (high anisotropy, strong directionality) and 1 Torr (high isotropy, good coverage) to adapt to different chamber structures and component shapes.

[0081] Radio frequency power: For large chambers, the power can be increased to 2000W or even higher, while for small chambers, the power can be reduced to 100W or even lower. Therefore, the appropriate power can be selected according to the type of chamber to ensure that the plasma fills the entire space and achieves uniform cleaning.

[0082] Endpoint detection: Endpoint detection methods include optical emission spectroscopy (OES) to monitor changes in the intensity of characteristic aluminum spectral lines or mass spectrometry to monitor changes in the partial pressure of aluminum-containing byproducts. Therefore, in addition to OES, mass spectrometry can also be used to monitor signal changes of fragment ions such as AlClx⁺ as an endpoint criterion, resulting in higher accuracy.

[0083] Following the chlorine-based cleaning step, an inert gas purging step and / or a vacuum extraction step can be used to remove residual chlorine-reactive substances and byproducts from the cleaning step. For example, the purging flow rate can be set to 100-1000 sccm, and the time to 1-60 seconds; the carrier gas used in the purging step can include at least one of the following gases: Ar, He, or N2. Besides purging, byproducts from the cleaning step can also be removed by a vacuum extraction step. The specific vacuum extraction method can be implemented according to the actual situation and is not specifically limited here.

[0084] In some examples, when chlorine-based plasma cleaning uses Cl2 as the main process gas, the flow rate can be further reduced to 80-200 sccm, the pressure to 0.3-1 Torr, and the RF power to 300-800 W, which is more conducive to the implementation of the process in different equipment.

[0085] Step 2: Deposit an Al2O3 passivation layer.

[0086] For example, the chamber temperature is first controlled at around 150°C, and then the carrier gas Ar is introduced at a flow rate of 30 sccm. The Ar gas flows through a TMA bubbler maintained at 40°C and carries TMA vapor into the chamber.

[0087] At the same time, O2 gas is introduced at a flow rate of 300 sccm;

[0088] N2 gas is introduced as a supplementary gas at a flow rate of 100 sccm to maintain stable chamber pressure and uniform gas distribution.

[0089] The chamber pressure was adjusted to 1 Torr, and a radio frequency power of 120 W (13.56 MHz) was applied to excite the plasma;

[0090] The deposition time is 20 seconds, which can form a uniform and dense aluminum oxide film of about 3 nm thick on the inner surface of the chamber and the quartz window.

[0091] refer to Figure 7 The illustration shows that in the cavity of a semiconductor manufacturing equipment, TMA (trimethylaluminum) is introduced as an aluminum source gas and activated by RF or microwave plasma to form highly reactive aluminum ions / radicals. Simultaneously, oxidants (such as O2) are dissociated by the plasma into highly reactive oxygen radicals (O•). These active substances react and deposit on the surface of the quartz component to form a dense Al2O3 passivation layer film.

[0092] Technical effects: The Al2O3 film formed by this low-temperature PECVD process is dense and uniform, has good insulation properties, and strong adhesion to quartz surfaces.

[0093] In addition, the following examples can be used as a reference in the deposition process.

[0094] Post-deposition purging: Stop the flow of TMA and O2, and purge the chamber with Ar gas to remove any unreacted precursors and byproducts. It should be noted that the purging step can also be inserted before deposition, i.e., after cleaning and before deposition, to further clean the chamber environment and make deposition more favorable; and, performing a second purging between multiple deposition steps is also beneficial for deposition.

[0095] The aluminum source using TMA is highly reactive and suitable for low-temperature deposition. In addition to TMA, other organic or inorganic aluminum sources such as triethylaluminum (TEA) or aluminum chloride (AlCl3) can also be used.

[0096] In addition to O2, using O3 as an oxidant can achieve higher quality Al2O3 deposition at lower temperatures (such as 80℃), resulting in denser films. H2O, H2O2, or N2O can also be used, but will not be elaborated further.

[0097] The deposition process employs plasma-enhanced chemical vapor deposition, thermochemical vapor deposition, or atomic layer deposition. Atomic layer deposition (ALD) allows for excellent step coverage and thickness control on the structural surface of quartz components by alternating the introduction of TMA and H2O (or O3).

[0098] In addition, by using thermal CVD mode, no plasma is required, and the deposition temperature is increased to 250-300℃. Thermal CVD does not require plasma, thus avoiding bombardment damage to potentially sensitive surfaces by high-energy ions, resulting in higher film purity.

[0099] In terms of thickness control, the passivation layer thickness can be precisely adjusted between 0.1 nm (ultra-thin, with minimal impact on the process) and 200 nm (ultra-strong protection, suitable for extreme corrosive environments). For example, the passivation layer thickness formed in each deposition step can be between 0.1 nm and 200 nm. Further precise thickness control can be achieved through multiple deposition steps, such as by controlling the deposition time or the number of cycles (e.g., using the ALD mode).

[0100] In some examples, the combination of "low-power / isotropic cleaning" and "low-temperature / ozone deposition" is suitable for delicate quartz components sensitive to ion bombardment and high temperatures, achieving "gentle yet efficient" protection. The combination of "high-power / anisotropic cleaning" and "plasma-enhanced deposition" is suitable for scenarios requiring rapid processing and high step coverage.

[0101] In summary, this invention cleverly utilizes the selective chemical reactions of chlorine groups with different materials by introducing a recyclable alumina passivation layer and its precise removal and redeposition process. For example, chlorine groups can be used to remove the Al2O3 thin film passivation layer, and their extremely high selectivity can be used to protect quartz (SiO2). This successfully solves the industry problem of quartz components being easily corroded in highly reactive plasma environments. This method not only significantly improves the lifespan of quartz components and the stability of the process chamber, but also directly improves the manufacturing yield of semiconductor devices by reducing particulate contamination, thus possessing significant industrial application value.

[0102] Example 2: Surface protection of quartz components based on AlN passivation layer

[0103] This embodiment provides an alternative to using aluminum nitride (AlN) as the passivation layer.

[0104] Chlorine-based plasma cleaning step: Same as or similar to Example 1, used to remove the AlN passivation layer. For details, please refer to the aforementioned examples, which will not be elaborated further.

[0105] AlN deposition steps:

[0106] The aluminum source uses TMA and is delivered via Ar carrier gas;

[0107] The nitrogen source used is NH3 (ammonia), with a flow rate of 100-300 sccm;

[0108] The chamber temperature needs to be relatively high, typically 300-400°C, to promote the reaction and obtain high-quality AlN films;

[0109] Pressure maintained at 1 Torr;

[0110] Apply RF power (100-300W) to excite the plasma (PECVD mode);

[0111] The reaction is: TMA + NH3 → AlN + CH4 + H2;

[0112] The deposition time is 20-40 seconds, forming an AlN film with a thickness of about 3-7 nm.

[0113] refer to Figure 8 This illustrates that within the cavity of a semiconductor manufacturing equipment, under plasma activation, trimethylaluminum (TMA) decomposes into Al⁺ free radicals, and the nitrogen source gas (NH₃ or N₂) decomposes into active N⁺ free radicals. These active groups undergo a chemical reaction on the surface of a quartz component, depositing to form a dense AlN passivation layer film.

[0114] Technical benefits: AlN has high thermal conductivity and good resistance to F-based plasma, and is compatible with existing TMA processes.

[0115] Example 3: Surface protection of quartz components based on a Y2O3 passivation layer

[0116] This embodiment provides an alternative to using yttrium oxide (Y2O3) as the passivation layer.

[0117] Chlorine-based plasma cleaning steps: Same as or similar to those in Example 1, for example, Cl2 / Ar plasma can be used to remove the residual Y2O3 passivation layer from the previous cycle. Alternatively, the intensity change of YCl characteristic spectral lines (e.g., around λ=378 nm) can be used as the endpoint criterion.

[0118] Y2O3 deposition steps:

[0119] The bubbler containing the solid yttrium precursor Y(TMHD)3 was heated to 120-140°C to sublimate it.

[0120] Ar is used as the carrier gas at a flow rate of 20-50 sccm to carry Y(TMHD)3 vapor into the chamber;

[0121] At the same time, O2 (300-500 sccm) is introduced as an oxidant, and O3 can be added to reduce the deposition temperature;

[0122] The chamber temperature is maintained at 200-300°C, and the pressure is maintained at 1-3 Torr.

[0123] Among them, RF power (50-200W) can be applied for plasma enhancement (PECVD mode), or thermal CVD can be performed without plasma;

[0124] The deposition time is 30-60 seconds, forming a Y2O3 film with a thickness of about 2-5 nm.

[0125] Technical benefits: Y2O3 exhibits excellent resistance to both F-based and O-based plasmas, providing superior protection compared to Al2O3, making it particularly suitable for extremely harsh process environments.

[0126] It should be noted that examples of the process of chlorine-based cleaning and redeposition of passivation layers containing other metal compounds can be found in the foregoing embodiments. The cleaning and deposition process is completed using appropriate metal precursors and reactive gases for specific metal compounds, which will not be elaborated here.

[0127] Example 4: A flowchart of a wafer plasma processing method based on the protective measures provided by the present invention.

[0128] This invention provides a plasma processing method for wafer fabrication, comprising:

[0129] Pretreatment step: The quartz components inside the plasma processing equipment cavity are subjected to anti-fluorine corrosion protection pretreatment using the method described in any of the foregoing embodiments of the present invention;

[0130] Processing steps: After completing the pretreatment steps, the wafer to be processed is subjected to a predetermined fluorine-based plasma process.

[0131] It should be noted that the pretreatment step can be carried out in the plasma processing equipment cavity without the wafer to be processed being placed inside, or it can be carried out inside the cavity with the wafer to be processed being plasma processed inside; there is no specific limitation.

[0132] Preferably, the solution provided by the present invention is particularly applicable to the desizing process in a high-hydrogen environment or the ashing process in a high-oxygen environment of fluorine-based plasma process, effectively eliminating the risk of significant performance degradation or even the formation of contaminating particles in wafer processing caused by the easy corrosion of quartz components by fluorine.

[0133] The following example illustrates a wafer fabrication scheme applied to a capacitively coupled plasma (CCP) etching apparatus, wherein the chamber top cover of the apparatus is a quartz window.

[0134] This embodiment provides a wafer fabrication solution that includes the following steps:

[0135] Step 1, Post-processing state: After the etching process of a wafer is completed, the inner wall of the cavity and the surface of the quartz window are covered with an aluminum oxide passivation layer from the previous pretreatment. This layer may be partially damaged or contaminated during the process.

[0136] Step 2, Wafer Transfer: The robotic arm removes the processed wafer from the reaction chamber.

[0137] Step 3, Chlorine-based plasma cleaning:

[0138] Close the chamber and evacuate to below the base pressure;

[0139] Cl2 gas was introduced into the chamber at a flow rate of 150 sccm, while Ar gas was introduced at a flow rate of 100 sccm to stabilize the plasma.

[0140] Adjust the chamber pressure to 0.8 Torr;

[0141] A radio frequency power (13.56 MHz) of 600 W was applied to excite and maintain the plasma;

[0142] The cleaning time is controlled by optical emission spectroscopy (OES) endpoint detection. The intensity of AlCl characteristic spectral lines (such as around 261 nm) is monitored. When the intensity of this spectral line decreases significantly and stabilizes at the background noise level, it indicates that the alumina passivation layer has been completely removed, and the plasma is stopped immediately. This process typically lasts 40-60 seconds.

[0143] Technical effect: This step selectively removes the alumina layer while the etching of the underlying quartz layer is negligible, achieving "zero-loss" cleaning of the quartz.

[0144] Step 4, Purging the Chamber: Stop the flow of Cl2 and purge the chamber with high-flow Ar gas (500 sccm) for 30 seconds to thoroughly remove residual etching byproducts and active chlorine species.

[0145] Step 5: Deposition of aluminum oxide passivation layer:

[0146] The chamber temperature is controlled at 150℃;

[0147] Ar carrier gas is introduced at a flow rate of 30 sccm. The Ar gas flows through a TMA bubbler maintained at 40°C and carries TMA vapor into the chamber.

[0148] At the same time, O2 gas is introduced at a flow rate of 300 sccm;

[0149] N2 gas is introduced as a supplementary gas at a flow rate of 100 sccm to maintain stable chamber pressure and uniform gas distribution.

[0150] Adjust the chamber pressure to 1 Torr;

[0151] A radio frequency power of 120 W (13.56 MHz) was applied to excite the plasma;

[0152] The deposition time is 20 seconds, which can form a uniform and dense aluminum oxide film of about 3 nm thick on the inner surface of the chamber and the quartz window.

[0153] Technical effect: The film deposited after purging is dense and uniform, with good isolation performance and strong adhesion to the quartz surface.

[0154] Step 6, Post-deposition purging: Stop the flow of TMA and O2, and purge the chamber with Ar gas to remove any unreacted precursors and byproducts.

[0155] Step 7, Next Wafer Process: Transfer the new wafer and perform the normal etching process.

[0156] Through the above steps, since the chamber atmosphere of each wafer is a fresh Al2O3 surface, the process repeatability is excellent, thus enabling high-quality processing of each wafer.

[0157] Example 5: Device and System Implementation Example

[0158] This embodiment integrates the protection method provided by the present invention to form a plasma processing device. The plasma processing device may include:

[0159] The processing chamber has a quartz roof window;

[0160] A base is used to support the wafer;

[0161] Gas supply system, including gas source (Cl2, CF4, Ar, N2, O2, TMA, carrier gas, etc.), mass flow controller (MFC), valves, etc.;

[0162] The plasma generation device, in this example, is a CCP system consisting of a top electrode and a base electrode, connected to a radio frequency power supply;

[0163] Vacuum system;

[0164] The control system includes a processor and a memory, wherein the memory stores a computer program that, when executed by the processor, automatically performs the various steps of the aforementioned protection method, including the control of gas flow rate, pressure, temperature, radio frequency power, and time, as well as receiving signals from an endpoint detector (such as an OES spectrometer) and determining the cleaning endpoint.

[0165] By integrating the protection methods described in the foregoing examples of this invention into plasma processing equipment, the protection process can be made part of a standard formulation, enabling fully automated operation of protection and high-quality processing.

[0166] In combination with the above Figure 1 , Figure 2 and Figure 5 The illustration shows a comparison of a traditional wafer processing scheme without the protection measures of this invention and a wafer processing scheme with the protection measures of this invention using scanning electron microscopy (SEM). The images show the SEM results of the quartz window surface after processing 1000 wafers. In the traditional scheme, the quartz component surface shows obvious corrosion and roughening, and after testing, a large number of particulate contaminants can be found. In contrast, the new processing scheme with the protection measures of this invention keeps the quartz component surface smooth and intact, reducing the number of particles that may be introduced by the quartz component by more than 95%. Moreover, the average lifespan of the quartz window is extended from the original 5000 wafers to tens of thousands of wafers or more (e.g., no less than 20000 wafers).

[0167] Based on the protection scheme provided by this invention, both the inner surface of the plasma processing device and the surface of the quartz component have a recyclable passivation layer containing a metal compound. The thickness of the metal compound passivation layer on the inner surface of the device and the outer surface of the quartz component can be 5 Å-200 nm, thereby providing a good inner cavity atmosphere and preventing the quartz component surface from being corroded by fluorine and becoming a source of particulate contamination during wafer processing.

[0168] It should be noted that the plasma processing equipment for semiconductor manufacturing in this invention can refer to related equipment that requires plasma processing, such as semiconductor thin film deposition equipment, plasma etching equipment, and resist stripping equipment, and these equipment can be capacitively coupled plasma equipment (CCP) or inductively coupled plasma equipment (ICP).

[0169] Based on the protection scheme provided by the present invention, the present invention also provides a quartz component, at least one surface of which has a passivation layer containing a metal compound of a predetermined thickness, so as to suppress the fluorine-based plasma erosion of the quartz component in a fluorine-based plasma process by means of the passivation layer, wherein the passivation layer is a passivation layer formed on the surface of the quartz component by means of any embodiment of the present invention.

[0170] Furthermore, the passivation layer on at least one surface of the quartz component has a thickness of 5 Å-200 nm; and / or, the quartz component is a chamber window, gas distribution plate, focusing ring, or insulating component of a plasma device.

[0171] This invention cleverly utilizes the differences in chemical reaction selectivity by introducing a recyclable alumina passivation layer and its precise removal and redeposition process to successfully solve the industry problem of quartz components being easily corroded in highly reactive plasma environments. This method not only significantly improves the lifespan of quartz components and the stability of the process chamber, but also directly improves the manufacturing yield of semiconductor devices by reducing particulate contamination, demonstrating significant industrial application value.

[0172] In this specification, the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the descriptions of the embodiments described later are relatively simple, and relevant parts can be referred to the descriptions of the foregoing embodiments.

[0173] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for protecting quartz components inside a plasma processing device, characterized in that, include: Several chlorine-based plasma cleaning steps: a chlorine-containing process gas is introduced into a processing chamber containing a quartz component and plasma is excited to selectively remove a fluorine-resistant passivation layer on the surface of the quartz component using chlorine-based plasma, wherein the passivation layer is a dense passivation layer resistant to fluorine corrosion in the fluorine-based plasma process. Several deposition steps: After the chlorine-based plasma cleaning, a new passivation layer is redeposited on the surface of the quartz component to suppress the fluorine-based plasma from eroding the quartz component during the fluorine-based plasma process. The plurality of chlorine-based plasma cleaning steps and the plurality of deposition steps are all performed within the plasma processing equipment chamber, so that the plasma processing equipment can be kept on the production line to perform surface protection treatment on the quartz components inside the chamber.

2. The method as described in claim 1, characterized in that, The passivation layer is etched at a higher rate by chlorine-based plasma than by quartz, and the etching selectivity ratio of chlorine-based plasma to passivation layer and quartz is greater than 5:

1. And / or, the passivation layer includes a passivation layer containing a metal compound, the metal compound including metal oxides, metal nitrides, or combinations thereof.

3. The method as described in claim 2, characterized in that, The metal oxide includes one or more of aluminum oxide, yttrium oxide, lanthanum oxide, gadolinium oxide, and erbium oxide; the metal nitride includes one or more of aluminum nitride, titanium nitride, and silicon nitride.

4. The method as described in claim 1, characterized in that, The deposition step is performed using plasma-enhanced chemical vapor deposition, thermochemical vapor deposition, or atomic layer deposition.

5. The method as described in claim 1, characterized in that, After the chlorine-based plasma cleaning step and before the deposition step, the method further includes a purging step using an inert gas and / or a vacuum extraction step to remove residual chlorine actives and byproducts from the cleaning step. And / or, a secondary purging step and / or a vacuum extraction step are performed after the deposition step to remove byproducts of the deposition step; The carrier gas used in the purging step includes at least one of the following gases: O2, Ar, He, and N2.

6. The method as described in claim 5, characterized in that, The purging flow rate is 100-1000 sccm, and the time is 1-60 seconds.

7. The method as described in claim 1, characterized in that, The chlorine-containing process gas includes one or more of Cl2, BCl3, SiCl4, CCl4, and HCl; And / or, the process parameters for the chlorine-based plasma cleaning include: pressure 0.001-1 Torr, radio frequency power 100-2000W, gas flow rate 50-2000 sccm, and processing time 5-300 seconds; And / or, the deposition process parameters of the passivation layer include: deposition temperature 20-400℃, pressure 0.05-20 Torr, and radio frequency power 10-500W; And / or, the passivation layer formed in each of the aforementioned deposition steps has a thickness of 0.1 nm to 200 nm; And / or, the chlorine-based plasma cleaning step uses an endpoint detection method to control the cleaning time, the endpoint detection method including optical emission spectroscopy to monitor the intensity change of metal characteristic spectral lines or mass spectrometry to monitor the partial pressure change of metal-containing by-products.

8. A plasma treatment method, characterized in that, include: Pretreatment step: The quartz components inside the plasma processing equipment cavity are subjected to anti-fluorine corrosion protection pretreatment using the method described in any one of claims 1-7; Processing steps: After completing the pretreatment steps, the wafer to be processed is subjected to a predetermined fluorine-based plasma process.

9. The method as described in claim 8, characterized in that, The fluorine-based plasma process includes a degumming process in a high-hydrogen environment or an ashing process in a high-oxygen environment.

10. A plasma processing device, characterized in that, include: A processing chamber containing at least one quartz component; A gas supply system for supplying process gases to the processing chamber; A plasma generation device for generating plasma within the processing chamber; A control system is configured to control a gas supply system and a plasma generation device to perform, within a processing chamber, the steps of a method for protecting quartz components within a plasma processing apparatus as described in any one of claims 1-7, or the steps of a plasma processing method as described in any one of claims 8-9.

11. The device as claimed in claim 10, characterized in that, The inner surface of the device and the surface of the quartz component both have a recyclable passivation layer.

12. The device as claimed in claim 11, characterized in that, The passivation layer thickness of the inner surface of the device and the outer surface of the quartz component is 5 Å-200 nm.

13. The device as claimed in claim 10, characterized in that, The device includes a capacitively coupled plasma device or an inductively coupled plasma device.

14. A quartz component, characterized in that, At least one surface of the quartz component has a passivation layer of a predetermined thickness to suppress fluorine-based plasma erosion of the quartz component in a fluorine-based plasma process, wherein the passivation layer is a passivation layer formed on the surface of the quartz component using the method described in any one of claims 1-7.

15. The quartz component as claimed in claim 14, characterized in that, The passivation layer on at least one surface of the quartz component has a thickness of 5 Å-200 nm; and / or, the quartz component is a chamber window, gas distribution plate, focusing ring, or insulating component of a plasma device.

Images