Substrate processing apparatus

Abstract

A substrate processing apparatus capable of minimizing an influence of a fill gas in a lower space on substrate processing includes: a substrate supporting unit; at least one ring surrounding the substrate support unit; a processing unit on the substrate supporting unit; and a discharge unit connected to the reaction space between the substrate support unit and the processing unit, in which a first gas in the reaction space is transmitted to the discharge unit through a first channel, and a second gas in a lower space below the substrate support unit is transmitted to the discharge unit through a second channel, and the first channel and the second channel are separated by at least one ring.

Description

[0001] This application is a divisional application of Chinese Invention Patent Application No. 202011201957.4 dated November 2, 2020 (Applicant: ASM IP Private Holdings Limited, Invention Title: Substrate Processing Equipment). Technical Field

[0002] One or more embodiments relate to a substrate processing apparatus, and more specifically, to a substrate processing apparatus having an improved emission structure. Background Technology

[0003] In substrate processing equipment, the reaction gases introduced into the reaction chamber are exhausted to the outside through the exhaust space. However, some reaction gases are introduced into the bottom of the heating block, particularly the bottom of the reactor, on which a base such as a substrate mounting part is installed. In particular, when heterogeneous gases are supplied, reaction byproducts are generated in the lower space of the chamber, and these byproducts become contaminants for the processed substrates and reduce the yield of the equipment. Furthermore, when highly corrosive cleaning gases are used to remove reaction byproducts, there is a problem of damage to chamber components, thus shortening the lifespan of the substrate processing equipment.

[0004] To prevent the reactive gases supplied to the reaction space from flowing into the bottom of the reactor, a gas is supplied from the bottom of the reactor. This gas is also called a fill gas because it fills the bottom of the reactor, and is typically an inert gas such as Ar or N2. The fill gas balances the pressure between the reaction space on the substrate mounting portion and the lower space of the reactor, preventing reactive gases from entering the lower space of the reactor. A substrate processing apparatus structure using such a fill gas is disclosed in U.S. Patent Publication No. 2018-0155836. Summary of the Invention

[0005] One or more embodiments include a substrate processing apparatus capable of minimizing the impact of the fill gas on substrate processing when pressure balance is achieved between the reaction space and the lower space of the reactor using the fill gas.

[0006] Other aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0007] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit; at least one ring disposed around the substrate support unit; a processing unit on the substrate support unit; and an emission unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space is transmitted to the emission unit through a first channel, a second gas in a lower space below the substrate support unit is transmitted to the emission unit through a second channel, and the first channel and the second channel can be separated by the at least one ring.

[0008] According to an example of a substrate processing apparatus, at least one ring may include: an outer ring configured to surround a substrate support unit; and a flow control ring configured between the substrate support unit and the outer ring.

[0009] According to another example of a substrate processing device, the first channel and the second channel can be separated by an outer ring.

[0010] According to another example of a substrate processing apparatus, the flow control ring may include: a first portion configured to overlap at least a portion of a substrate support unit; a second portion extending from the first portion along a side of the substrate support unit; and a third portion configured to overlap at least a portion of an outer ring from the second portion.

[0011] According to another example of the substrate processing apparatus, at least one of the discharge pipe and the outer ring may include a curved structure, wherein a second portion of the flow control ring and the outer ring are separated from each other to form a space, and the curved surface may be configured to facilitate the discharge of the reactive gas located in the space to the first channel.

[0012] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a support configured to support a processing unit and an emission unit, a first channel being formed between the emission unit and an outer ring, and a second channel being formed between the outer ring and the support.

[0013] According to another example of the substrate processing apparatus, the substrate support unit can be configured to move vertically, and the flow control ring can be configured to contact the substrate support unit and the outer ring surface when the substrate support unit moves upward, and move up and down as the substrate support unit moves vertically.

[0014] According to another example of the substrate processing apparatus, the emission efficiency of the first channel C1 and the emission efficiency of the second channel C2 can vary depending on the degree of vertical movement of the substrate support unit.

[0015] According to another example of a substrate processing apparatus, the first channel and the second channel can be separated by a flow control ring.

[0016] According to another example of a substrate processing apparatus, the flow control ring may include: a first portion configured to overlap at least a portion of an outer ring; and a second portion extending from the first portion along the side of a substrate support unit.

[0017] According to another example of the substrate processing apparatus, the substrate processing apparatus may also include a support configured to support the processing unit and the discharge unit, a first channel may be formed between the discharge unit and the flow control ring, and a second channel may be formed between the flow control ring and the outer ring.

[0018] According to another example of the substrate processing apparatus, the substrate support unit can be configured to move vertically, and when the substrate support unit moves upward, the flow control ring can self-align while sliding relative to the outer ring under the thrust of the substrate support unit.

[0019] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit; at least one ring disposed around the substrate support unit; a processing unit on the substrate support unit; and a discharge unit connected to a reaction space between the substrate support unit and the processing unit, wherein the reaction space can communicate with a discharge space of the discharge unit through a first channel between the discharge unit and the at least one ring, and the at least one ring can be configured to contact the surface of the substrate support unit when the substrate support unit moves upward, and move up and down as the substrate support unit moves vertically.

[0020] According to an example of a substrate processing apparatus, a second gas in the lower space below the substrate support unit can be transmitted to an emission unit through a second channel, and the first channel and the second channel can be separated by at least one ring.

[0021] According to another example of the substrate processing apparatus, the substrate processing apparatus may also include a support configured to support a processing unit and an emission unit, at least one ring may include an outer ring, a first channel may be between the emission unit and the outer ring, and a second channel may be between the outer ring and the support.

[0022] According to an example of a substrate processing apparatus, at least one ring may further include a flow control ring disposed between the outer ring and the substrate support unit.

[0023] According to another example of a substrate processing apparatus, at least one ring may include: an outer ring configured to surround a substrate support unit; and a flow control ring disposed between the substrate support unit and the outer ring, wherein a first channel may be between a discharge unit and the flow control ring, and a second channel may be between the flow control ring and the outer ring.

[0024] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit configured to be movable along a first direction; at least one ring disposed around the substrate support unit; and a processing unit on the substrate support unit, wherein the at least one ring can be configured to move in a second direction different from the first direction by the movement of the substrate support unit in the first direction.

[0025] According to an example of a substrate processing apparatus, a first gas in the reaction space on the substrate support unit is discharged through a first channel, a second gas in the lower space below the substrate support unit is discharged through a second channel, and the first channel and the second channel can be separated by at least one ring.

[0026] According to another example of the substrate processing apparatus, at least one ring may be configured to contact the substrate support unit as the substrate support unit moves in a first direction, and may be configured to self-align while moving in a second direction by the force generated when the substrate support unit continues to move in the first direction while in contact with at least one ring. Attached Figure Description

[0027] The above and other aspects, features and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, wherein:

[0028] Figure 1 and 2 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0029] Figures 3 to 5 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0030] Figure 6 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0031] Figure 7 and 8 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0032] Figures 9 to 11 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0033] Figures 12 to 14 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0034] Figure 15 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0035] Figure 16 yes Figure 15 A partial enlarged view of the substrate processing equipment;

[0036] Figure 17 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0037] Figure 18 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0038] Figure 19 yes Figure 18 A partial enlarged view of the substrate processing equipment;

[0039] Figure 20 and 21 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0040] Figure 22 This is a diagram illustrating the ring self-alignment process caused by the rising of the heating block; and

[0041] Figure 23 yes Figure 22 The view of the ring shown. Detailed Implementation

[0042] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When an expression such as “at least one” precedes the list of elements, it modifies the entire list of elements but not the individual elements within the list.

[0043] The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit this disclosure. As used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that the terms “comprising,” “including,” and variations thereof, as used herein, specify the presence of the stated features, integers, steps, processes, components, parts, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, processes, components, parts, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0044] It will be understood that although the terms first, second, etc., may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms do not indicate any order, number, or importance, but are used only to distinguish individual parts, regions, layers, and / or portions. Therefore, without departing from the teachings of the embodiments, the first components, parts, regions, layers, and / or portions discussed below may be referred to as second components, parts, regions, layers, and / or portions.

[0045] In the following description, embodiments of the present disclosure will be illustrated with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations in shape may be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the present disclosure should not be construed as limited to the specific shape regions shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0046] Figure 1 and 2 This is a view of a substrate processing apparatus according to an embodiment of the present invention. Figure 1 The substrate processing apparatus and a portion thereof (a cross-section of the portion where the opening of the discharge unit 120 is not formed) are shown. Figure 2 The substrate processing apparatus and another part of the substrate processing apparatus (a cross section of the portion forming the opening OP of the discharge unit 120) are shown.

[0047] Reference Figure 1 and 2 The substrate processing apparatus may include a separator 100, a substrate support unit 150, a processing unit 110, an emission unit 120, and at least one ring R. The substrate processing apparatus may include a reaction space 51 and an emission space 55 connected to the reaction space 51.

[0048] The partition 100 is a chamber for accommodating the substrate support unit 150, which may also be referred to as a chamber. In one embodiment, the reactor including the reaction space 51 is referred to as the inner chamber, and the overall structure of the substrate processing apparatus surrounding multiple reactors (e.g., four reactors) may be referred to as the outer chamber. An exhaust conduit 18 may be disposed in the partition 100. In some embodiments, the exhaust conduit 18 may be formed to extend inward along the sidewall of the partition 100. In one embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent to the first surface, and the exhaust conduit 18 may extend along the edge between the first and second surfaces. In other embodiments, the exhaust conduit 18 may be formed to extend inward along the lower wall of the partition 100.

[0049] The processing unit 110 may be located on a substrate support unit 150 configured to support a substrate. A reaction space 51 may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining the upper surface of the reaction space 51. In other words, the first cover on the substrate support unit may include at least one processing unit 110.

[0050] The processing unit 110 may include components that perform appropriate functions according to the functions of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supply (e.g., a nozzle assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

[0051] The processing unit 110 can be a conductor and can be used as an electrode for generating plasma. That is, the processing unit 110 can be used as an electrode for generating plasma. Hereinafter, the processing unit 110 used in this way (the way in which the processing unit 110 is used as an electrode) will be referred to as a gas supply electrode.

[0052] The substrate support unit 150 can be configured to provide an area where an object to be processed (not shown), such as a semiconductor or display substrate, is located. The substrate support unit 150 can be supported by a driver (not shown) capable of vertical and / or rotational movement. Furthermore, the substrate support unit 150 can be a conductor and can be used as an electrode for generating plasma (i.e., the opposite electrode of the gas supply electrode).

[0053] The emission unit 120 may be located between the processing unit 110 and the support TLD. The emission unit 120 may extend to surround the reaction space 51. Gas in the reaction space 51 can be discharged to the emission port 13 through the emission unit 120.

[0054] In one embodiment, the discharge unit 120 may serve as a second cover defining a side surface of the reaction space 51. The second cover including the discharge unit 120 may include a discharge space 55 connected to the reaction space 51. Therefore, the discharge unit 120 can provide a discharge space 55. Furthermore, the discharge unit 120 can provide a space therein for accommodating the processing unit 110. When the processing unit 110 is accommodated in this space, the processing unit 110 can contact the discharge unit 120.

[0055] The discharge unit 120 may include a partition wall W between the reaction space 51 and the discharge space 55. A first surface (e.g., an outer surface) of the partition wall W may define the reaction space 51, while a second surface (i.e., an inner surface facing the first surface) of the partition wall W may define the discharge space 55. For example, the reaction space 51 may be defined by the first surface side of the partition wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110, which serves as a first cover. In other words, the side surface of the reaction space 51 may be defined by the partition wall W of the discharge unit 120.

[0056] The discharge unit 120 can provide a portion of the space for the object to be processed. For example, when the substrate processing apparatus performs a deposition function, the reaction space 51 for deposition can be defined by the discharge unit 120. Furthermore, the discharge space 55 can be defined inside the discharge unit 120. The reaction space 51 can be connected to the discharge port 13 via the discharge space 55 of the discharge unit 120. More specifically, gas in the reaction space 51 can be discharged to the discharge port 13 via the first channel C1, the discharge space 55, and the opening OP.

[0057] In one example, the discharge unit 120 may include a connecting wall C and an outer wall O extending from the partition wall W. The outer wall O of the discharge unit 120 is disposed parallel to the partition wall W and may contact the support member TLD. An opening OP may be formed in the outer wall O, and the discharge unit 120 and the discharge port 13 may be connected to each other through the opening OP. The connecting wall C of the discharge unit 120 may extend to connect the partition wall W to the outer wall O. The connecting wall C may provide a contact surface with the processing unit 110. The processing unit 110, as a first cover, and the discharge unit 120, as a second cover, may contact each other through the contact surface.

[0058] The support member TLD can contact the discharge unit 120 to support the processing unit 110 and the discharge unit 120. The support member TLD can be supported by the partition 100. As described above, the support member TLD can serve as a top cover supported by the partition 100 to cover the outer chamber, while supporting the processing unit 110 as a first cover and the discharge unit 120 as a second cover.

[0059] A support member TLD may be located between the partition 100 and a cover (e.g., a second cover including the discharge unit 120). Furthermore, the support member TLD may be located between the partition 100 and the discharge port 13. The support member TLD may include a path P that connects the discharge port 13 to a discharge conduit 18 of the partition 100. In other embodiments, a sealing member (not shown) may be located between the support member TLD and the partition. The sealing member may extend circumferentially along the discharge conduit 18 or path P to prevent leakage of gas from path P into the discharge conduit 18.

[0060] At least one ring R may be configured to surround the substrate support unit 150. For example, at least one ring R may include a flow control ring FCR. The flow control ring FCR may be located below the discharge unit 120. More specifically, the flow control ring FCR may be arranged to overlap at least a portion of the discharge unit 120 in the vertical direction. Due to this overlapping arrangement, a first channel C1 may be formed between the flow control ring FCR and the discharge unit 120. As a result, a first gas (e.g., source gas and / or reactant gas) in the reaction space 51 may be transported to the discharge space 55 of the discharge unit 120 through the first surface (e.g., the upper surface) of the flow control ring FCR.

[0061] More specifically, the partition wall W of the emission unit 120 may provide a first channel C1 connecting the reaction space 51 to the emission space 55. For example, the first channel C1 may be formed between the emission unit 120 and at least one ring R, particularly between the emission unit 120 and the flow control ring FCR. The first channel C1 can serve as a passage between the reaction space 51 and the emission space 55. Therefore, the reaction space 51 and the emission space 55 can communicate with each other through the first channel C1 provided by the partition wall W.

[0062] The flow control ring FCR can be separated from the support TLD to form the second channel C2. The flow control ring FCR can move laterally on the substrate support unit 150 (i.e., slide against the substrate support unit 150). By adjusting the width or spacing of the second channel C2 through lateral movement, the pressure balance between the reaction space 51 and the lower space 57 below the substrate support unit 150 (i.e., the inner space of the outer chamber) can be controlled.

[0063] The second gas introduced into the lower space 57 through the filling gas inlet 114 can be transferred to the discharge space 55 through the second channel C2. More specifically, the second gas in the lower space 57 can be transferred to the discharge space 55 of the discharge unit 120 through the second surface (e.g., the side surface) of the flow control ring FCR.

[0064] The support member TLD can provide a second channel C2 connecting the lower space 57 to the discharge space 55. For example, the second channel C2 can be formed between the support member TLD and at least one ring R, particularly between the support member TLD and the flow control ring FCR. The second channel C2 can serve as a passage between the lower space 57 and the discharge space 55. Therefore, the lower space 57 and the discharge space 55 can communicate with each other through the second channel C2 provided by the support member TLD.

[0065] In this way, the first gas in reaction space 51 and the second gas in lower space 57 can move through different channels (i.e., first channel C1 and second channel C2). The first gas and the second gas, which have moved to different channels, can meet each other at points other than reaction space 51. For example, the first gas and the second gas can meet each other outside reaction space 51. More specifically, the first gas and the second gas can meet each other below the emission unit 120 located outside reaction space 51.

[0066] In one example, the first gas and the second gas can be transferred to the emission unit 120 from corresponding channels C1 and C2 via the junction I below the emission unit 120. The junction I can be located outside the partition wall W. More specifically, the junction I can be located outside the surface of the partition wall W in the side surface of the partition wall W that contacts the reaction space 51. In one example, the junction I can be below the partition wall W of the emission unit 120. In another example, the junction I can be the emission space 55 in the emission unit 120.

[0067] In either example, the first gas in reaction space 51 and the second gas in lower space 57 will not meet each other in reaction space 51. Therefore, collisions between the first gas (e.g., reactant gas) and the second gas (e.g., filler gas) in the substrate edge region can be prevented. In other words, by configuring the substrate processing apparatus such that the first gas in reaction space 51 and the second gas in lower space 57 meet each other on the outer side of the surface of the partition wall that contacts reaction space 51, turbulence that may occur in the substrate edge region can be prevented.

[0068] Furthermore, the first channel C1 through which the first gas passes in reaction space 51 and the second channel C2 through which the second gas passes in lower space 57 can be separated from each other by at least one ring R. Here, the separation of the channels means that the two channels extend without meeting each other. Therefore, the first channel C1 and the second channel C2, separated by at least one ring R, particularly the flow control ring FCR, can extend independently without meeting each other. The first channel C1 and the second channel C2 separated by the flow control ring FCR may meet at the junction I outside the flow control ring FCR and be transported to the discharge space 55.

[0069] Thus, according to embodiments of the present invention, the impact of the filling gas supplied from the bottom of the reactor on the processing on the substrate can be minimized. Furthermore, according to embodiments of the present invention, rapid gas discharge can be achieved by allowing the gas to be diverted and discharged through at least one ring structure (such as a flow control ring).

[0070] Figures 3 to 5 These are views of a substrate processing apparatus according to some embodiments of the present invention. More specifically, Figure 3This shows a portion of the substrate processing equipment, excluding the cover (i.e., the processing unit and the discharge unit) and the discharge port (e.g., discharge lines 18 and 28, connection port CP, external path EC connected to an external pump, etc.). Figure 4 It is observed from the first direction. Figure 3 The view, Figure 5 It is observed from the second direction. Figure 3 The view is shown. The substrate processing apparatus according to the embodiments can be a variation of the substrate processing apparatus according to the above embodiments. In the following, the embodiments will not be described again.

[0071] refer to Figures 3 to 5 Discharge lines 18 and 28 are formed in the partition 100. Discharge lines 18 and 28 are connected to the external path EC via a connection port CP, and the external path EC is connected to the main discharge path 211. Therefore, the gas in the reaction space and the gas in the lower space are discharged to the discharge pump EP through discharge ports 13 and 23, discharge lines 18 and 28, the external path EC, and the main discharge path 211. Although not shown in the figures, each discharge port 13 and 23 is provided with a flow control unit according to an embodiment of the present invention.

[0072] like Figure 4 As shown, the two reactors R1a and R1b in the first direction use internal discharge lines 18a and 18b, while the remaining two reactors in the opposite direction use other internal discharge lines 28a and 28b. The two internal discharge lines 18 and 28 are connected to the external path EC via connection ports CP and CP', respectively. The external path EC can be implemented in one or more configurations.

[0073] As a result, it can be seen that the four reactors utilize at least one of the external paths EC and EC', the main discharge path 211, and the discharge pump EP. An isolation valve 210 can be added to the main discharge path 211. Therefore, during maintenance, the isolation valve 210 can protect the discharge pump EP from the external atmosphere. Furthermore, a pressure control valve (e.g., a throttle valve) can be added to the main discharge path 211. The external path EC can be fixed in place to maintain close contact with the lower surface of the outer chamber partition 100. In an alternative embodiment, the two internal discharge lines 18 and 28 can be connected to each other within the bottom wall of the outer chamber partition 100 and directly connected to the main discharge path 211, without the external path EC.

[0074] Refer again Figure 3A first external path EC, connected to the first connection port CP, may extend below the partition 100 toward the first corner portion C1 of the outer chamber. Additionally, a second external path EC', connected to the second connection port CP' (not shown), may extend below the partition 100 toward the second corner portion C2 of the outer chamber. A discharge pump EP may be disposed on one surface of the substrate processing equipment, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC may extend from the portion extending to the first corner portion C1 to the discharge pump EP. Furthermore, the second external path EC' may extend from the portion extending to the second corner portion C2 to the discharge pump EP.

[0075] Figure 6 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0076] Figure 6 The upper surface of the multi-reactor chamber 311 is shown. Multiple reactors RT are arranged in the chamber 311, and one side of each reactor RT is connected to the discharge port 313. Figure 6 It is shown that each reactor RT is connected to each discharge port 313, and the discharge ports 313 are arranged asymmetrically with respect to the center of each reactor RT.

[0077] Multiple discharge lines (not shown) may be formed in the partition of chamber 311. For example, chamber 311 may be rectangular in shape, and the multiple discharge lines may include a first discharge line, a second discharge line, a third discharge line, and a fourth discharge line. In some embodiments, the first to fourth discharge lines may be arranged corresponding to the four vertices of the rectangle.

[0078] Chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate support unit, at least one ring, a processing unit, a discharge unit, and a discharge port.

[0079] More specifically, the first reactor may include a first substrate support unit (not shown) housed in a partition of chamber 311, at least one first ring surrounding the first substrate support unit, a first processing unit 312 on the first substrate support unit, a first discharge unit 314 connected to a first reaction space between the first substrate support unit and the first processing unit 312, and a first discharge port 313 connected to at least a portion of the first discharge unit 314. As described above, the gas in the first reaction space and the gas in the lower space below the first substrate support unit can meet each other outside the first reaction space. Furthermore, the gas in the first reaction space and the gas in the lower space below the first substrate support unit can be transmitted to the first discharge unit 314 through different channels. The different channels can be separated by at least one first ring. The different channels may also extend along different surfaces of at least one first ring.

[0080] The second reactor may include a second substrate support unit (not shown) housed in a partition of chamber 311, at least one second ring surrounding the second substrate support unit, a second processing unit 312 on the second substrate support unit, a second discharge unit 314 connected to a second reaction space between the second substrate support unit and the second processing unit 312, and a second discharge port 313 connected to at least a portion of the second discharge unit 314. As described above, the gas in the second reaction space and the gas in the lower space below the second substrate support unit can meet each other outside the second reaction space. Furthermore, the gas in the second reaction space and the gas in the lower space below the second substrate support unit can be transmitted to the second discharge unit 314 through different channels. The different channels can be separated by at least one second ring. The different channels may also extend along different surfaces of at least one second ring.

[0081] The third reactor may include a third substrate support unit (not shown) housed in a partition of chamber 311, at least one third ring surrounding the third substrate support unit, a third processing unit 312 on the third substrate support unit, a third discharge unit 314 connected to the third reaction space between the third substrate support unit and the third processing unit 312, and a third discharge port 313 connected to at least a portion of the third discharge unit 314. As described above, the gas in the third reaction space and the gas in the lower space below the third substrate support unit can meet each other outside the third reaction space. Furthermore, the gas in the third reaction space and the gas in the lower space below the third substrate support unit can be transmitted to the third discharge unit 314 through different channels. The different channels can be separated by at least one third ring. The different channels may also extend along different surfaces of at least one third ring.

[0082] The fourth reactor may include a fourth substrate support unit (not shown) housed in a partition of chamber 311, at least one fourth ring surrounding the fourth substrate support unit, a fourth processing unit 312 on the fourth substrate support unit, a fourth discharge unit 314 connected to the fourth reaction space between the fourth substrate support unit and the fourth processing unit 312, and a fourth discharge port 313 connected to at least a portion of the fourth discharge unit 314. As described above, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit can meet each other outside the fourth reaction space. Furthermore, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit can be transmitted to the fourth discharge unit 314 through different channels. The different channels can be separated by at least one fourth ring. The different channels may also extend along different surfaces of at least one fourth ring.

[0083] Figure 7 and 8 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0084] Reference Figure 7 and 8 At least one ring R may include at least one of a flow control ring FCR and an outer ring OR. The outer ring OR may be configured to surround the flow control ring FCR. Therefore, the flow control ring FCR may be located between the substrate support unit 150 and the outer ring OR.

[0085] The first gas in the reaction space 51 passes through a first channel C1 between the discharge unit 120 and the flow control ring FCR. The second gas in the lower space 57 passes through a second channel C2 between the outer ring OR and the flow control ring FCR. In this way, the first channel C1 and the second channel C2 are separated by the flow control ring FCR, and since the separated first channel C1 and the second channel C2 can join each other at the junction I outside the reaction space 51 and connect to the discharge space 55, a stable processing progress can be achieved.

[0086] The flow control ring (FCR) can be implemented in an "L" shape, and for this purpose, the flow control ring FCR can include a first portion FCR-1 and a second portion FCR-2. The first portion FCR-1 can be defined as a portion that overlaps with at least a portion of the substrate support unit 150. In an alternative embodiment, the first portion FCR-1 of the flow control ring FCR can be configured to slide on the substrate support unit 150.

[0087] In some embodiments, the substrate support unit 150 may be configured to be vertically movable. When the substrate support unit 150 is raised, the flow control ring FCR can move up and down with the vertical movement of the substrate support unit 150 by means of the first portion FCR-1 of the flow control ring FCR, which is arranged to overlap with the substrate support unit 150.

[0088] The second portion FCR-2 can be defined as the portion extending vertically from the first portion FCR-1 along the side of the substrate support unit 150. Additionally, the second portion FCR-2 of the flow control ring FCR can extend horizontally (circumferentially) along the side of the support member TLD. In some embodiments, the second portion FCR-2 may extend to overlap with at least a portion of the discharge unit 120. Although not shown in the figures, in another embodiment, the flow control ring FCR may also include a third portion (see...). Figure 18 The FCR-3 in the second part extends from the FCR-2 and overlaps with at least a portion of the emission unit 120.

[0089] The outer ring OR can be on the support TLD. More specifically, the outer ring OR can be between the discharge unit 120 and the support TLD. The outer ring OR can be configured to slide on the support TLD. The flow control ring FCR can be separated from the outer ring OR to form a second channel C2, and the pressure balance between the reaction space 51 and the inner space of the outer chamber (i.e., the lower space 57) can be controlled by adjusting the spacing of the second channel C2.

[0090] The outer ring OR may include a curved structure at the corner portion adjacent to the junction I of the first channel C1 and the second channel C2. Such a curved structure can accelerate the flow of gas around the curved structure. In an alternative embodiment, the discharge unit 120 may also include a curved structure at the corner portion adjacent to the junction I. In this case, the junction I will be between the curved structure of the outer ring OR and the curved structure of the discharge unit 120.

[0091] By introducing a curved structure in the outer ring OR, the second gas moving through the second channel C2 can be accelerated to the discharge unit 120 in laminar flow along the curved structure. Therefore, collisions at the junction I of the first gas moving through the first channel C1 and the second gas moving through the second channel C2 can be reduced. Consequently, the curved structure facilitates the discharge of gas around the junction I.

[0092] Figures 9 to 11 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0093] refer to Figure 9 and 10 The flow control ring FCR may include a first portion FCR-1' and a second portion FCR-2. The first portion FCR-1' of the flow control ring FCR may be defined as a portion that overlaps with at least a portion of the support member TLD. Furthermore, the first portion FCR-1' may extend to overlap with at least a portion of the substrate support unit 150. Therefore, the flow control ring FCR can be implemented as a "T" shape.

[0094] Although Figure 9 and 10 The first portion FCR-1' is shown to be configured to overlap with the support TLD and the substrate support unit 150, but the first portion FCR-1' can also be configured to overlap only with the support TLD (see [link]). Figure 21 In this case, the flow control loop (FCR) will be implemented in an "L" shape.

[0095] The second portion FCR-2 of the flow control ring FCR can extend vertically from the first portion FCR-1' along the side of the substrate support unit 150. Additionally, the second portion FCR-2 of the flow control ring FCR can extend horizontally (circumferentially) along the side of the support member TLD. That is, the second portion FCR-2 of the flow control ring FCR can extend between the substrate support unit 150 and the support member TLD.

[0096] Through the construction of the flow control ring FCR, the first channel C1 and the second channel C2 can be separated from each other in the reaction space 51. That is, the first channel C1 formed between the emission unit 120 and the flow control ring FCR and the outer ring OR formed between the flow control ring FCR and the support TLD (or the support) are separated. Figure 12 The second channel C2 between the two channels can extend within the reaction space 51 without meeting each other.

[0097] In some embodiments, such as Figure 9 and 10 As shown, the first channel C1 and the second channel C2 can be separated by the flow control ring FCR and extend to the discharge unit 120. In this case, the junction of the first gas through the first channel C1 and the second gas through the second channel C2 will become the discharge space 55 outside the reaction space 51.

[0098] The substrate support unit 150 can be configured to move vertically. For example, the substrate support unit 150 can move downwards, and the substrate can be loaded / unloaded in the lower space 57. Furthermore, the substrate support unit 150 can move upwards, and substrate processing can be performed in the reaction space 51. When the substrate support unit 150 moves vertically, the flow control ring FCR can contact the surface of the substrate support unit 150.

[0099] For example, when the substrate support unit 150 moves up and down, the lower surface of the first portion FCR-1', which is configured to overlap with the flow control ring FCR, and the upper surface of the step of the substrate support unit 150 can come into contact with each other. As a result, the reaction space 51 and the lower space 57 can be connected to the discharge space 55 through the first channel C1 and the second channel C2 separated by the flow control ring FCR, respectively.

[0100] In some embodiments, the first portion FCR-1' of the flow control ring FCR may include a non-flat structure Y. More specifically, the non-flat structure Y may be formed in the first portion FCR-1' of the flow control ring FCR, which overlaps with at least a portion of the upper surface of the step of the support TLD. Through the non-flat structure Y, a second channel C2 may be formed between the first portion FCR-1' of the flow control ring FCR and the support TLD.

[0101] In an alternative embodiment, the first portion FCR-1' of the flow control ring FCR may not include the uneven structure. In this case, the flow control ring FCR can also move up and down when the substrate support unit 150 moves up and down. As the flow control ring FCR moves up and down, a second channel C2 can be created between the first portion FCR-1' and the upper surface of the step of the support TLD. In either case, the first gas in the reaction space can be transported to the emission unit through the first surface of the flow control ring FCR, while the second gas in the lower space can be transported to the emission unit through the second surface of the flow control ring FCR.

[0102] In some embodiments, the flow control ring FCR can move up and down as the substrate support unit 150 moves vertically. Furthermore, the flow control ring FCR can slide relative to the support TLD along with the vertical movement of the substrate support unit 150. In this case, the discharge efficiency of the first channel C1 and / or the discharge efficiency of the second channel C2 can vary depending on the degree of vertical movement of the substrate support unit 150.

[0103] Figure 11 It shows in Figure 9 and 10 The exemplary construction of the flow control ring (FCR) used in the embodiments is shown below. The flow control ring (FCR) having a first portion FCR-1' and a second portion FCR-2 can have a shape corresponding to the shape of the substrate to be processed. For example, when the substrate to be processed is a circular wafer, the flow control ring can be implemented as a circle with a larger diameter. Figure 11As shown, the flow control ring FCR can be implemented with a "T" shaped cross-section. Furthermore, the first part of the flow control ring FCR, FCR-1'', can have a non-flat structure Y, and the second gas in the lower space can be transferred to the emission unit through the non-flat structure Y.

[0104] Figures 12 to 14 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0105] Reference Figure 12 and 13 The substrate processing apparatus may further include an outer ring OR configured to surround a flow control ring FCR. In this case, a first portion FCR-1' of the flow control ring FCR may overlap with at least a portion of the outer ring OR. Additionally, a first channel C1 may be located between the discharge unit 120 and the flow control ring FCR, and a second channel C2 may be located between the outer ring OR and the flow control ring FCR. The outer ring OR may be on a support TLD.

[0106] The flow control ring (FCR) can be configured to slide on the outer ring (OR). For example, the lower surface of the flow control ring (FCR) or the upper surface of the outer ring (OR) can be surface-treated to have a relatively low roughness (e.g., a roughness of 0.4 or less).

[0107] The second portion FCR-2 of the flow control ring FCR, that is, the portion extending vertically from the first portion FCR-1' along the side of the substrate support unit 150, may have a surface inclined relative to the substrate support unit 150 (see [reference]). Figure 12 and 13 For example, the side surface of the substrate support unit 150 may extend in the vertical direction, and the side surface of the second portion FCR-2 of the flow control ring FCR may extend in a direction inclined relative to the vertical direction. In another example, the side surface of the second portion FCR-2 of the flow control ring FCR may extend in the vertical direction, and the side surface of the substrate support unit 150 may extend in a direction inclined relative to the vertical direction.

[0108] Thus, by configuring the flow control ring FCR to slide on the outer ring OR, and by configuring the side surface of the second portion FCR-2 of the flow control ring FCR and the side surface of the substrate support unit 150 to be inclined relative to each other, the flow control ring FCR can move in a second direction as the substrate support unit 150 moves in a first direction. More specifically, when the substrate support unit 150 moves in the first direction, the substrate support unit 150 can contact the flow control ring FCR. The flow control ring FCR can move in the second direction (e.g., slide in a horizontal direction) by the force generated when the substrate support unit 150 continues to move in the first direction while in contact with the flow control ring FCR.

[0109] This force can be defined as the force exerted by the substrate support unit on the flow control ring FCR. Since the flow control ring FCR can slide on the outer ring OR, the thrust causes the flow control ring FCR to slide relative to the outer ring OR when the substrate support unit 150 moves up and down.

[0110] Figure 14 It shows in Figure 12 and 13 An exemplary configuration of the flow control ring FCR used in the embodiments is described above. The flow control ring FCR may include a first portion FCR-1' extending to overlap with the substrate support unit 150 and the outer ring OR, and a second portion FCR-2 extending vertically from the first portion. The second portion FCR-2 may be configured to have a sloping surface. For example, the sloping surface may be formed such that the inner diameter of one end near the first portion FCR-1' is smaller than the inner diameter of the other end away from the first portion FCR-1'.

[0111] Figure 15 This is a view of a substrate processing apparatus according to an embodiment of the present invention. Figure 16 yes Figure 15 An enlarged view of part A in the diagram. The substrate processing apparatus according to the embodiment can be a variation of the substrate processing apparatus according to the above embodiment. In the following, the embodiments will not be described again.

[0112] Reference Figure 15 A substrate (not shown) is mounted on a heating block 79. A heating block driver 710 in the lower space can move the heating block 79 vertically. The loading and unloading of the substrate can be performed by the vertical movement of the heating block 79.

[0113] Gas supplied to the reactor is introduced into the reaction space 711 on the heating block 79 (not shown) where the substrate is located through gas inlet 713 and nozzle 72. Process gas 716 is then discharged after substrate processing (e.g., deposition) is completed using the gas (or during substrate processing). Process gas 716 is conveyed to discharge pipe 74 through the space between flow control ring 75 and discharge pipe 74. Process gas 716 conveyed to discharge pipe 74 can be discharged to discharge pump (not shown) through discharge port 73 and reactor wall 71.

[0114] When gas 715 is introduced into the reaction space 711 through gas inlet 713, filling gas 717 is introduced into the lower space 712 of the reactor through filling gas inlet 714. For example... Figure 15 As shown in region A, when the processed gas 716 is discharged into the discharge space 76 in the discharge duct 74, the fill gas 717 is supplied to the separation space between the heating block 79 and the flow control ring 75. By supplying the fill gas 717 to the separation space, the processed gas 716 is prevented from being introduced into the lower reactor space 712. To achieve this prevention, a regulating operation can be performed to balance the processing pressure in the reaction space 711 and the pressure in the lower reactor space 712 to which the fill gas 717 is supplied.

[0115] The filling gas 717 introduced into the separation space between the heating block 79 and the flow control ring 75 reduces emission efficiency. Specifically, emission efficiency may be reduced because the filling gas 717 introduced into the separation space after the reaction collides with the processing gas 716. Furthermore, this gas collision occurs in the substrate edge region. Therefore, gas collisions may affect the uniformity of the film to be processed.

[0116] More in detail, such as Figure 16 As shown, a scenario is illustrated where the heating block 79 is raised to form a reaction space 711 for substrate processing. Collisions may occur between the processing gas 716 and the fill gas 717 moving through the space between the heating block 79 and the flow control ring 75. These gas collisions hinder the normal discharge of gas into the exhaust pipe 74. Due to this poor exhaust flow in the substrate edge region, the uniformity of the film in the substrate edge is reduced. Therefore, the present invention seeks to disclose a structure and apparatus for minimizing the impact of the fill gas on the processing in the reaction space.

[0117] Figure 17 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0118] Reference Figure 17To prevent the filling gas 717 from the lower space and the processing gas 716 from the reaction space 711 from colliding directly near the edge of the substrate (i.e., the edge of the heating block 79), a flow control ring 75 is placed at the edge of the heating control block 79. A first discharge channel through which the processing gas 716 travels is formed between the flow control ring 75 and the discharge pipe 74, while a second discharge channel through which the filling gas 717 travels is formed between the flow control ring 75 and the outer ring 718.

[0119] Therefore, as Figure 17 As shown in (b), direct collisions between the processing gas 716 and the filling gas 717 around the substrate can be prevented. Furthermore, due to the curved structure at the corner of the outer ring 718, the filling gas 717 can be accelerated along the curved structure of the outer ring 718 constituting the second discharge channel via the Coanda effect. The accelerated filling gas 717 can be effectively discharged into the discharge space 76 of the discharge duct 74 while forming laminar flow.

[0120] Simultaneously, the flow control ring 75 can move up and down together with the heating block 79. In this case, the height of the first discharge channel formed between the flow control ring 75 and the discharge pipe 74 can be adjusted according to the rising height of the heating block 79 and the flow control ring 75. Therefore, the emission efficiency of the treated gas 716 discharged into the discharge space 76 through the first discharge channel can be controlled.

[0121] As the heating block 79 is lowered, the flow control ring 75 located on the heating block 79 can descend. As the lowering of the heating block 79 continues for loading / unloading the substrate to be processed, the flow control ring 75 can detach from the heating block 79, and the detached flow control ring 75 can be located on the support member 750. The support member 750 can be fixed below the chamber CH. In an alternative embodiment, the support member 750 can be configured to be detachable below the chamber CH.

[0122] When the heating block 79 is raised, the flow control ring 75 located on the support member 750 can be positioned on the heating block 79 again. Therefore, when the heating block 79 moves up and down, the flow control ring 75 on the support member 750 separates from the support member 750, and the flow control ring 75 can move up and down together with the heating block 79.

[0123] Figure 18 This is a view of a substrate processing apparatus according to an embodiment of the present invention. Figure 19 yes Figure 18 A partial enlarged view of the substrate processing apparatus. The substrate processing apparatus according to the embodiment can be a variation of the substrate processing apparatus according to the above embodiment. In the following, the embodiments will not be described again.

[0124] refer to Figure 18The emission paths of the treatment gas 716 and the filling gas 717 are separated from each other. That is, the treatment gas 716, through its first emission channel, and the filling gas, through its second emission channel, can be separated by the outer ring 718. Therefore, as... Figure 18 As shown in Figure B, the processing gas 716 is discharged into the discharge pipe 74 through a first discharge channel formed between the discharge pipe 74 and the outer ring 718, without colliding with the filling gas 717. The filling gas 717 is discharged into the discharge pipe 74 through a second discharge channel between the chamber wall (i.e., the support) and the outer ring 718, without colliding with the processing gas 716.

[0125] The flow control ring 75 may include a first portion FCR-1" which is configured to overlap with at least a portion of the substrate support unit including the heating block 79, a second portion FCR-2 which extends vertically from the first portion FCR-1" along the side of the substrate support unit, and a third portion FCR-3 which extends horizontally from the second portion FCR-2 to overlap with at least a portion of the outer ring 718.

[0126] A flow control ring 75 is disposed at the edge of the heating block 79 and moves up and down together with the heating block 79. When the heating block 79 rises to the substrate processing position, the flow control ring 75 and the outer ring 718 perform a surface seal 719 to physically prevent collisions between the reactive gas and the filling gas.

[0127] More specifically, as the heating block 79 rises, the lower surface of the first portion FCR-1" can contact the heating block 79, and the upper surface of the third portion FCR-3 can connect to the lower surface of the outer ring 718. Therefore, as the heating block 79 continues to rise, the flow control ring FCR can also rise through the first portion FCR-1", and the outer ring 718 can also rise through the third portion FCR-3. As the outer ring 718 rises through the accompanying upward movement, the second discharge channel can be formed through the separation between the chamber wall CH (i.e., the support) and the outer ring 718.

[0128] As the heating block 79 descends, the lower surface of the outer ring 718 can contact the chamber wall CH (i.e., the support member), and the outer ring 718 can be located on the chamber wall CH. Then, as the heating block 79 continues to descend, the flow control ring 75 located on the heating block 79 can separate from the heating block 79, and the lower surface of the third part FCR-3 can contact the upper surface of the support member 750. Therefore, the flow control ring 75, separated from the heating block 79, will be located on the support member 750.

[0129] and Figure 17 The implementation methods differ, depending on Figure 18In this embodiment, the heights of the first and second discharge channels can be determined based on the degree to which the flow control ring 75 raises the outer ring 718, i.e., the rising height of the heating block 79. Therefore, the discharge efficiency of the filling gas 717 or the treatment gas 716 can be controlled, and the raising position of the heating block 79 can be determined to achieve optimal discharge efficiency.

[0130] At the same time, Figure 18 In (b), the side of the outer ring 718 can be separated from the side of the flow control ring 75. More specifically, the second part FCR-2 of the flow control ring 75 and the outer ring 718 can be separated from each other to form a space. Due to this formed space, a blind spot 720 exists between the outer ring 718 and the flow control ring 75. Since no fill gas is supplied to the blind spot, some of the processed gas discharged from the reaction space remains. Figure 19 yes Figure 18 (b) Enlarged view of the area around blind spot 720.

[0131] like Figure 19 As shown, in some embodiments, at least one of the discharge conduit 74 and the outer ring 718 may include a curved structure. The curved structure may be configured to facilitate the discharge of the processed gas (e.g., the reactant gas) located in the aforementioned space into the first discharge channel. For example, the curved structure may have a certain radius of curvature.

[0132] refer to Figure 19 The reaction gases discharged from the reaction space to the discharge pipe 74 are discharged in approximately three forms. The "G1" form of flow is discharged directly from the reaction space into the discharge space 76 through the discharge channel between the outer ring 718 and the discharge pipe 74. Figure 18 The flow in form “G2” flows along the outer wall of the discharge duct 74 and is accelerated near the curved surface L of the discharge duct 74 before being introduced into the discharge channel. The flow in form “G3” flows into the blind spot 720 and then flows back into the discharge channel by suction in the discharge space. Here, the flow in form “G3” is accelerated near the curved surface L' of the outer ring 718 to be introduced into the discharge channel. That is, due to the curved structure of the outer ring 718, residual gas and its turbulence can be prevented from entering the blind spot, and the treated gas can be discharged and removed more quickly and smoothly.

[0133] Figure 20 This is a view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the embodiment may be a variation of the substrate processing apparatus according to the above embodiment. Hereinafter, the embodiments will not be described again.

[0134] Reference Figure 20The discharge duct 74 may include a first bend structure D1, and the outer ring 718 may include a second bend structure D2. In this case, the junction I of the first channel through which the process gas 716 exits and the second channel through which the fill gas 717 exits may be between the first bend structure D1 of the discharge duct 74 and the second bend structure D2 of the outer ring 718. Thus, the corner of the outer ring 718 and the discharge duct 74 exposed to the discharge channels are bends. Therefore, the discharge of the fill gas 717 and the process gas 716 (e.g., the reactant gas) can be accelerated along the bends of the outer ring 718 or the discharge duct 74 by inducing the Coanda effect.

[0135] exist Figures 18 to 20 In one embodiment, to ensure the smooth and rapid discharge of the filling gas 717 and the processing gas 716, the corners of the discharge pipe and the outer ring that encounter the gas are bent to induce the Coanda effect. To achieve this, the curvature of the bent surface can preferably be R1 or greater (i.e., a radius of curvature of 1 mm or greater).

[0136] Figures 18 to 20 The technical features of the embodiments are as follows.

[0137] 1. Bypass the gap between the upper and lower spaces connecting the reactor. That is, it can prevent gas movement from top to bottom and from bottom to top, and can suppress lower discharge by immediately discharging the lower gas.

[0138] 2. The distance between the existing flow control ring and the heating block (i.e., the channel through which the filling gas in the lower space is discharged) can be separated from the substrate to suppress processing changes caused by the lower gas.

[0139] 3. Plasma confinement can be achieved by arranging the flow control ring on the side of the heating block, and uniform and stable plasma processing can be performed by concentrating the plasma in the reaction space on the substrate.

[0140] 4. The flow control ring located on the side of the heating block can move according to the vertical movement of the heating block. Therefore, the width and volume of the discharge channels formed between the discharge pipe and the outer ring, and between the outer ring and the chamber wall, can be controlled.

[0141] In the above Figures 18 to 20 In one embodiment, the exhaust gas flow is controlled by a structure in which the flow control ring is disposed on the side of the heating block (i.e., the flow control ring is configured to overlap a portion of the heating block in the vertical direction). On the other hand, Figure 21 A structure is shown in which a flow control ring is disposed on an outer ring to overlap a portion of the outer ring. In this embodiment, the exhaust gas flow is controlled by a structure that prevents collisions between the reactant gas and the filling gas around the heating block.

[0142] refer to Figure 21 The separation distance between the side of the heating block 79 and the flow control ring 75 is very narrow. For example, the separation distance can be configured to be within 0.2 mm. Therefore, it is difficult for the filling gas 717 to enter the reaction space or for the process gas 716 to enter the lower space. On the other hand, the flow control ring 75 and the outer ring 718 are sufficiently separated from each other to allow gas to pass through, thereby forming an exhaust channel for the filling gas 717.

[0143] Therefore, as Figure 21 As shown, the processing gas 716 and the filling gas 717 will not collide with each other around the heating block and can be discharged into the discharge space 76 through corresponding discharge channels. Figure 21 In this design, by significantly narrowing the separation distance between the side of the heating block 79 and the flow control ring 75, collisions between the process gas 716 and the filling gas 717 are minimized. However, another advantage of this structure is that it facilitates the self-alignment of the flow control ring 75 within the reaction space. For example, when the flow control ring 75 is asymmetrically positioned on the upper surface of the outer ring 718, i.e., when the center of symmetry of the inner diameter of the flow control ring 75 is not aligned with the center of the heating block 79, as the heating block 79 rises, it comes into contact with a portion of the inner surface of the flow control ring 75, thus applying a force relative to the flow control ring 75 in the horizontal direction. Therefore, the center of symmetry of the inner diameter of the flow control ring 75 and the center of the heating block 79 can coincide.

[0144] Figure 22 This process is illustrated. Figure 22 The process of self-alignment of the flow control ring 75 by the heating block 79 is shown.

[0145] - First operation ( Figure 22 (a): Heating block 79 rises.

[0146] - Second operation ( Figure 22 (b): The side of the heating block 79 is in contact with the inside of the flow control ring 75.

[0147] - Third operation ( Figure 22 (c): As the heating block 79 continues to rise in contact with the flow control ring 75, the flow control ring 75 begins to move. For example, the flow control ring 75 moves laterally (i.e., slides) relative to the outer ring 718 on the upper surface of the step of the outer ring 718 with surface contact.

[0148] - Fourth operation ( Figure 22 (d): As the heating block 79 continues to rise in contact with the flow control ring 75, the flow control ring 75 performs self-alignment.

[0149] - Fifth operation ( Figure 22 (e): The heating block 79 is raised to the substrate processing position, and the self-alignment of the flow control ring 75 is completed.

[0150] according to Figure 22 The control method of the substrate processing apparatus in the embodiments (particularly the self-alignment of the flow control ring) is particularly important in high-temperature processes (e.g., high-temperature processes above 500°C). At high temperatures, due to the thermal deformation of the heating block 79 and the flow control ring 75, the width of the gap between the heating block 79 and the flow control ring 75 depends on their positions on the sides of the heating block 79 and the flow control ring 75. Therefore, when the flow control ring 75 is fixed to the outer ring 718, filling gas or reactive gas can be introduced into the gap at a specific location, which can affect the film uniformity around the substrate.

[0151] according to Figure 22 In this embodiment, the flow control ring 75 is self-aligned through contact between the heating block 79 and the flow control ring 75, which prevents deformation due to high temperature and the resulting non-uniformity in the process. To maintain this structure, the sidewalls of the flow control ring 75 and the sidewalls of the outer ring 718 are spaced apart at regular intervals to facilitate alignment of the flow control ring 75 on the upper surface of the outer ring 718.

[0152] Figure 23 yes Figure 22 A view of the flow control loop 75 used.

[0153] refer to Figure 22 and 23 The lower surface of the flow control ring 75, i.e., the portion of the flow control ring 75 that contacts the upper surface of the outer ring 718, has a non-flat structure Y, which supports the flow control ring 75 on the outer ring 718 and provides an exhaust channel for a filling gas such as nitrogen (N2). Additionally, the surface roughness of the inner surface of the flow control ring can be 0.4 or less, allowing the inner surface of the flow control ring 75 to contact the heating block 79 and slide under its own weight, with self-alignment achieved through this sliding.

[0154] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing apparatus comprising: a substrate support unit; at least one ring surrounding the substrate support unit; a processing unit on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein the reaction space communicates with an exhaust space of the exhaust unit through a first passage between the exhaust unit and the at least one ring, and the at least one ring is in surface contact with the substrate support unit and moves up and down in accordance with vertical movement of the substrate support unit as the substrate support unit moves upward.

2. The substrate processing apparatus according to claim 1, a second gas in a lower space below the substrate support unit is transported to the exhaust unit through a second passage, and wherein the first passage and the second passage are separated by the at least one ring.

3. The substrate processing apparatus according to claim 2, further comprising: a support configured to support the processing unit and the exhaust unit, wherein the at least one ring includes an outer ring, the first passage is between the exhaust unit and the outer ring, and the second passage is between the outer ring and the support.

4. The substrate processing apparatus according to claim 3, the at least one ring further includes a flow control ring between the outer ring and the substrate support unit. wherein 5. The substrate processing apparatus according to claim 2, the at least one ring includes: wherein an outer ring surrounding the substrate support unit; and a flow control ring between the substrate support unit and the outer ring, the first passage is between the exhaust unit and the flow control ring, and the second passage is between the flow control ring and the outer ring.

6. A substrate processing apparatus comprising: a substrate support unit configured to be movable in a first direction; at least one ring surrounding the substrate support unit; and a processing unit on the substrate support unit, wherein the at least one ring moves in a second direction different from the first direction in accordance with movement of the substrate support unit in the first direction.

7. The substrate processing apparatus according to claim 6, a first gas in a reaction space on the substrate support unit is exhausted through a first passage, a second gas in a lower space below the substrate support unit is exhausted through a second passage, and wherein, the first passage and the second passage are separated by the at least one ring.

8. The substrate processing apparatus according to claim 6, the at least one ring contacts the substrate support unit when the substrate support unit is moved in the first direction, and the at least one ring is self-aligned while moving in the second direction by a force generated when the substrate support unit continues to move in the first direction while in contact with the at least one ring. wherein ​ ​

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